CN111849656A - 一种功率半导体器件用硅片清洗液 - Google Patents
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Abstract
本发明涉及一种功率半导体器件用硅片清洗液。包括一种功率半导体器件用硅片清洗液，其特征在于：包括C12脂肪醇聚氧乙烯醚、烷基二苯醚二磺酸盐、氢氧化钠和烷基苯磺酸钠，配制方法如下：先将烷基二苯醚二磺酸盐和C12脂肪醇聚氧乙烯醚按质量比1：2~3复配，制成复配剂；然后将烷基苯磺酸钠、氢氧化钠和复配剂按1：8~10：2~3的比例复配，配制成功率半导体器件用硅片清洗液。使用本发明的功率半导体器件用硅片清洗液可明显降低硅片表面粗糙度、改善硅片表面划痕处的腐蚀损伤，使硅片的外观及性能都得到改善。
Description
技术领域
本发明涉及半导体器件的清洗领域，特别涉及一种功率半导体器件用硅片清洗液。
背景技术
硅片经研磨和腐蚀工艺后广泛应用于功率半导体器件中，但由于刚研磨后的晶片表面附着不同种类的玷污物，而现今广泛应用的传统的清洗工艺使用的清洗剂是氢氧化钾水溶液，清洗后的硅片再经氢氟酸腐蚀后表面的粗糙度较大，划痕处的腐蚀损伤严重，使硅片的外观及性能都受到影响。
发明内容
针对传统的清洗工艺存在的问题，本发明通过分析硅单晶在加工过程中污染物的种类和其表面的吸附性质，配制出一种功率半导体器件用硅片清洗液，使用功率半导体器件用硅片清洗液可明显降低硅片表面粗糙度、改善硅片表面划痕处的腐蚀损伤。
本发明的技术方案是：一种功率半导体器件用硅片清洗液，其特征在于：包括C12脂肪醇聚氧乙烯醚、烷基二苯醚二磺酸盐、氢氧化钠和烷基苯磺酸钠，配制方法如下：
一、将烷基二苯醚二磺酸盐和C12脂肪醇聚氧乙烯醚按质量比1：2~3复配，制成复配剂；
二、将烷基苯磺酸钠、氢氧化钠和复配剂按1：8~10：2~3的比例复配，配制成功率半导体器件用硅片清洗液。
本发明的有益效果是，本发明使用的碳十二脂肪醇聚氧乙烯醚，作为非离子表面活性剂在水中不电离出离子，表面活性高，乳化去油效果好，因此抗硬水性强，稳定性高，与其他表面活性复配，在30-80℃间不会出现浑浊；本发明使用的烷基二苯醚二磺酸盐的除油率约为87%，碳十二脂肪醇聚氧乙烯醚除油率约为90%，复配后的除油率94%左右，相对于单一配比清洗后硅晶片的表面张力，复配后的硅晶片表面张力降低了约为28.53mN*m-1；烷基苯磺酸钠具有去污、湿润、发泡、乳化、分散的表面活性，氢氧化钠可以去除硅片表面氧化物（氧化硅）和沉淀在氧化中污染物的作用。因此使用本发明的功率半导体器件用硅片清洗液可明显降低硅片表面粗糙度、改善硅片表面划痕处的腐蚀损伤，使硅片的外观及性能都得到改善。
附图说明
图1是硅片经本发明清洗液处理后的表面形貌；
图2是硅片经传统清洗液处理后表面形貌。
具体实施方式
一种功率半导体器件用硅片清洗液，包括C12脂肪醇聚氧乙烯醚、烷基二苯醚二磺酸盐、氢氧化钠和烷基苯磺酸钠，配制方法如下：
一、将烷基二苯醚二磺酸盐和C12脂肪醇聚氧乙烯醚按质量比1：2~3复配，制成复配剂；
二、将烷基苯磺酸钠、氢氧化钠和复配剂按1：8~10：2~3的比例复配，配制成功率半导体器件用硅片清洗液。
使用时，按下以下步骤清洗：
一、用去离子水将功率半导体器件用硅片清洗液复配成PH11~13的功率半导体器件用硅片清洗溶液；
二、用去离子水冲洗研磨后的硅片；
三、用步骤一复配好的功率半导体器件用硅片清洗溶液清洗经去离子水冲洗后的硅片，清洗工艺参数为：清洗温度50-60℃，功率为70-80W，清洗时间100-140s，超声清洗频率为30-45Hz；
四、用去离子水清洗冲洗步骤三处理后的硅片；
五、将经过步骤四处理后的硅片用氢氟酸腐蚀后用去离子水冲洗、干燥，完成清洗。
实施例
一种功率半导体器件用硅片清洗液，包括C12脂肪醇聚氧乙烯醚、烷基二苯醚二磺酸盐、氢氧化钠和烷基苯磺酸钠，配制方法如下：
一、烷基二苯醚二磺酸盐和C12脂肪醇聚氧乙烯醚按质量比1：2.5复配，即分别取10克的烷基二苯醚二磺酸盐和25克的C12脂肪醇聚氧乙烯醚，制成复配剂；
二、烷基苯磺酸钠、氢氧化钠和复配剂按1：9：2.5的比例复配，即分别取
10克的烷基苯磺酸钠、90克的氢氧化钠，和25克步骤一的复配剂配制成功率半导体器件用硅片清洗液。
按下以下步骤清洗：
一、用35升的去离子水将100克功率半导体器件用硅片清洗液溶解稀释，继续用去离子水复配成PH11的功率半导体器件用硅片清洗溶液；
二、用去离子水冲洗研磨后的硅片；
三、用步骤一复配好的功率半导体器件用硅片清洗溶液清洗经去离子水冲洗后的硅片，清洗工艺参数为：清洗温度55℃，功率为80W，清洗时间120s，超声清洗频率为30-45Hz；
四、用去离子水清洗冲洗步骤三处理后的硅片；
五、将经过步骤四处理后的硅片用氢氟酸腐蚀后用去离子水冲洗、干燥，完成清洗。
表面粗糙度对比实验结果：研磨后的硅片在使用不同的清洗液清洗，经腐蚀甩干后，通过表面粗糙度测试仪，通过测硅片周边四点和中间点取平均值的方法，测得硅片经过功率半导体器件用硅片清洗液和传统清洗液清洗后表面粗糙度对比结果，如表1所示。
表1 功率半导体器件用硅片清洗液和传统清洗液清洗后硅片表面粗糙度
由表1可知，采用传统清洗液清洗后硅片表面粗糙度的均值为44.3μm，经新型清洗液清洗后的表面粗糙度的均值为31.5μm，并且相对于传统清洗液清洗后每片硅片粗糙度的均匀性有了很大的改善。
表面划痕损伤对比实验结果：如图1、图2所示，使用不同的清洗液清洗后的硅片在原子力显微镜下的形貌特征显示：使用新型清洗液清洗后的硅片，相对于传统工艺表面损伤划痕明显变浅。
Claims (3)
1.一种功率半导体器件用硅片清洗液，其特征在于：包括C12脂肪醇聚氧乙烯醚、烷基二苯醚二磺酸盐、氢氧化钠和烷基苯磺酸钠，配制方法如下：
一、将烷基二苯醚二磺酸盐和C12脂肪醇聚氧乙烯醚按质量比1：2~3复配，制成复配剂；
二、将烷基苯磺酸钠、氢氧化钠和复配剂按质量1：8~10：2~3的比例复配，配制成功率半导体器件用硅片清洗液。
2.如权利要求1所述的一种功率半导体器件用硅片清洗液，其特征在于：
一、烷基二苯醚二磺酸盐和C12脂肪醇聚氧乙烯醚按质量比1：2.5复配，制成复配剂；
二、烷基苯磺酸钠、氢氧化钠和复配剂按1：9：2.5的比例复配，和步骤一的复配剂配制成功率半导体器件用硅片清洗液。
3.如权利要求1所述的一种功率半导体器件用硅片清洗液，其特征在于：使用时，按下以下步骤清洗：
一、用去离子水将功率半导体器件用硅片清洗液复配成PH11~13的功率半导体器件用硅片清洗溶液；
二、用去离子水冲洗研磨后的硅片；
三、用步骤一复配好的功率半导体器件用硅片清洗溶液清洗经去离子水冲洗后的硅片，清洗工艺参数为：清洗温度50-60℃，功率为70-80W，清洗时间100-140s，超声清洗频率为30-45Hz；
四、用去离子水清洗冲洗步骤三处理后的硅片；
五、将经过步骤四处理后的硅片用氢氟酸腐蚀后用去离子水冲洗、干燥，完成清洗。
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102660409A (zh) * | 2012-05-14 | 2012-09-12 | 陕西省石油化工研究设计院 | 光伏电池硅片清洗剂及其制备方法 |
| CN103897862A (zh) * | 2012-12-25 | 2014-07-02 | 青海天誉汇新能源开发有限公司 | 一种光伏硅片清洁剂及其清洁方法 |
| CN103946958A (zh) * | 2011-09-20 | 2014-07-23 | 嘉柏微电子材料股份公司 | 用于抛光铝半导体基材的组合物及方法 |
| CN104862134A (zh) * | 2015-03-27 | 2015-08-26 | 武汉宜田科技发展有限公司 | 一种硅片脱胶剂、其制造方法和使用方法 |
| CN108865542A (zh) * | 2018-08-22 | 2018-11-23 | 江西宝盛半导体能源科技有限公司 | 一种去蜡液及其制备方法与应用 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103946958A (zh) * | 2011-09-20 | 2014-07-23 | 嘉柏微电子材料股份公司 | 用于抛光铝半导体基材的组合物及方法 |
| CN102660409A (zh) * | 2012-05-14 | 2012-09-12 | 陕西省石油化工研究设计院 | 光伏电池硅片清洗剂及其制备方法 |
| CN103897862A (zh) * | 2012-12-25 | 2014-07-02 | 青海天誉汇新能源开发有限公司 | 一种光伏硅片清洁剂及其清洁方法 |
| CN104862134A (zh) * | 2015-03-27 | 2015-08-26 | 武汉宜田科技发展有限公司 | 一种硅片脱胶剂、其制造方法和使用方法 |
| CN108865542A (zh) * | 2018-08-22 | 2018-11-23 | 江西宝盛半导体能源科技有限公司 | 一种去蜡液及其制备方法与应用 |
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