CN111834186A - Ion source mounting structure and ion source device - Google Patents
Ion source mounting structure and ion source device Download PDFInfo
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- CN111834186A CN111834186A CN202010850672.7A CN202010850672A CN111834186A CN 111834186 A CN111834186 A CN 111834186A CN 202010850672 A CN202010850672 A CN 202010850672A CN 111834186 A CN111834186 A CN 111834186A
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- ion source
- hall
- base
- mounting structure
- hollow cathode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
- H01J27/146—End-Hall type ion sources, wherein the magnetic field confines the electrons in a central cylinder
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- Combustion & Propulsion (AREA)
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Abstract
The application relates to an ion source mounting structure and an ion source device, which are applied to the ion source device, wherein the ion source device comprises at least one Hall ion source and at least one hollow cathode; the hollow cathode is arranged at a set position away from the Hall ion source and provides neutralizing electrons for the Hall ion source; this mounting structure includes: the ion source comprises an ion source base, an angle adjusting mechanism and a base; the Hall ion source is installed on the ion source base, the ion source base is installed on the base through the angle adjusting mechanism, and the ion source base rotates through the angle adjusting mechanism to adjust the emission angle of the Hall ion source. Through the technical scheme of this application, can adjust the angle of hall ion source according to the coating film demand to can promote the ion source and cover the effect, improve the availability factor.
Description
Technical Field
The application relates to the technical field of ion sources, in particular to an ion source mounting structure and an ion source device.
Background
The ion source is an applied scientific technology which has wide application, multiple types, multiple related sciences, strong technological property and rapid development. The Hall ion source is a very common ion source type, is mostly applied to the field of thin film deposition, and is used as a deposition auxiliary component to improve the physical properties of a thin film.
The ion source device is used for coating in a vacuum coating machine, but in the coating process, different coating objects need different coverage areas and different density ion beams, so that a better use effect can be obtained. The conventional ion source device is generally fixedly installed in a vacuum coating machine, and cannot be adjusted aiming at different coating objects, so that the ion source coverage effect is poor, and the use efficiency is low.
Disclosure of Invention
The present application aims to solve one of the above technical drawbacks, particularly the drawbacks of poor ion source coverage and low utilization efficiency, and provides an ion source mounting structure and an ion source apparatus.
An ion source mounting structure is applied to an ion source device, and the ion source device comprises at least one Hall ion source and at least one hollow cathode; the hollow cathode is arranged at a set position away from the Hall ion source and provides neutralizing electrons for the Hall ion source;
this mounting structure includes: the ion source comprises an ion source base, an angle adjusting mechanism and a base;
the Hall ion source is installed on the ion source base, the ion source base is installed on the base through the angle adjusting mechanism, and the ion source base rotates through the angle adjusting mechanism to adjust the emission angle of the Hall ion source.
In one embodiment, the ion source mounting structure further comprises a rotary joint;
the hollow cathode is mounted on the base through a rotary joint, and the hollow cathode freely rotates through the rotary joint to adjust the emission direction of the neutralized electrons.
In one embodiment, the hall ion source is fixed on the ion source base through a sliding rail, and the position of the hall ion source is adjusted through sliding of the sliding rail.
The ion source mounting structure in one embodiment, further comprising: the telescopic support, telescopic support's one end is equipped with the installation base, and the other end is connected the base.
In one embodiment, the ion source base is provided with a plurality of groups of positioning holes, and the hall ion source is fixed at a set position of the ion source base through any group of positioning holes.
In one embodiment, a driving motor is arranged in the angle adjusting mechanism, and the driving motor is used for driving and adjusting the angle of the Hall ion source;
a driving motor is arranged in the rotary joint and is used for driving and adjusting the sending direction of the hollow cathode;
a driving motor is arranged in the sliding rail and is used for driving and adjusting the position of the Hall ion source on the ion source base;
and/or
A driving motor is arranged in the telescopic support, and the telescopic height is driven and adjusted through the driving motor.
The ion source mounting structure in one embodiment further comprises a controller connected to the angle adjustment mechanism, the rotary joint, the slide rail and the telescopic bracket, respectively; the controller is used for outputting control signals to control the angle adjusting mechanism, the rotary joint, the slide rail and the driving motor arranged in the telescopic bracket.
The ion source mounting structure in one embodiment further comprises a human-computer interaction module connected with the controller, and is used for receiving input optimal adjustment parameters and transmitting the input optimal adjustment parameters to the controller; wherein the optimal adjustment parameters comprise an optimal angle of the ion source, an optimal direction of the hollow cathode, an optimal position of the ion source and/or an optimal height of the bracket.
In one embodiment, the method for obtaining the optimal adjustment parameter includes:
detecting the surface thickness of the substrate after the vacuum coating machine is used to obtain thickness parameters of a plurality of positions;
and calculating the optimal angle of the ion source, the optimal direction of the hollow cathode, the optimal position of the ion source and/or the optimal height of the bracket according to the thickness data.
An ion source device comprises at least one Hall ion source, at least one hollow cathode and the ion source mounting structure;
the hollow cathode is arranged at a set position away from the Hall ion source and provides neutralizing electrons for the Hall ion source;
the Hall ion source and the hollow cathode are mounted on the ion source mounting structure.
According to the ion source mounting structure and the ion source device, the ion source base is mounted on the base through the angle adjusting mechanism, so that the emission angle of the Hall ion source can be adjusted through rotation of the angle adjusting mechanism. When the ion source device is applied to a vacuum coating machine, the angle of the Hall ion source can be adjusted according to the coating requirement, so that the ion source coverage effect can be improved, and the use efficiency can be improved.
Furthermore, the ion source mounting structure of the application also comprises a rotary joint for mounting the hollow cathode, a slide rail for mounting the Hall ion source, a telescopic support of a mounting base and the like, when the structure is used for a vacuum coating machine, the structure can adjust the electron emission direction of the hollow cathode, the covering position of the Hall ion source and the height of the ion source from a coating object, and the like, so that the covering effect and the use efficiency of the ion source are further improved.
Furthermore, the ion source mounting structure of this application, angle adjustment mechanism, rotary joint, slide rail, telescoping shoring column etc. are equipped with driving motor in all, drive the flexible height of adjustment through driving motor, can realize electrified regulation, promote intellectuality.
In addition, the ion source mounting structure can also control the driving motors of the angle adjusting mechanism, the rotary joint, the sliding rail, the telescopic bracket and the like through the controller, and receive input optimal adjusting parameters through the human-computer interaction module, wherein the optimal adjusting parameters can be obtained by calculating thickness parameters obtained by detecting the surface thickness of the substrate after the vacuum coating machine is used; therefore, the accurate calculation and control of the coverage range of the ion source are realized, and the using effect of the ion source device is greatly improved.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic view of an ion source apparatus;
FIG. 2 is a schematic view of ion source angle adjustment;
FIG. 3 is a schematic view of an ion source mounting base configuration;
FIG. 4 is a schematic view of a rotary joint construction;
FIG. 5 is a schematic view of a Hall ion source installation;
FIG. 6 is a schematic view of a telescoping support structure;
fig. 7 is an electrical structural view of the ion source apparatus.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, or operations, but do not preclude the presence or addition of one or more other features, integers, steps, operations, or groups thereof.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an ion source apparatus, the ion source apparatus includes at least one hall ion source 10 and at least one hollow cathode 20, and the hollow cathode 20 is disposed at a set position away from the hall ion source 10 to provide neutralizing electrons for the hall ion source 10. In the figure, two hall ion sources are taken as an example, and the number of the hall ion sources can be set according to actual requirements in practical application.
The application provides an ion source mounting structure, includes: the ion source comprises an ion source base 11, an angle adjusting mechanism 12 and a base 30, wherein the Hall ion source 10 is installed on the ion source base 11, the ion source base 11 is installed on the base 30 through the angle adjusting mechanism 12, and the ion source base 11 rotates through the angle adjusting mechanism 12 to adjust the emission angle of the Hall ion source 10. Referring to fig. 2, fig. 2 is a schematic view of ion source angle adjustment; as shown in the figure, the two hall ion sources 10 include a hall ion source a101 and a hall ion source B102, and the hall ion source B102 can rotate by an angle through the angle adjusting mechanism 12, so as to adjust the emission angle of the hall ion source B102.
In practical work, the hall ion source 10 and the hollow cathode 20 work simultaneously, process gas enters a discharge region from the bottom of an anode of the hall ion source 10, when anode voltage is applied to the anode of the hall ion source 10, electrons move to the anode under the action of an electric field, ionized ions of the electrons move to obtain corresponding energy under the action of the hall electric field due to collision of a magnetic field and the atoms, the ionized ions and the hot electrons generate hot electrons, the hollow cathode 20 and partial hot electrons emitted by the hollow cathode 20 form plasma, and the plasma is emitted to act on a substrate to achieve the purpose of cleaning and auxiliary coating. The hollow cathode has the functions of supplying electrons to the discharge area, compensating space charge of the ion beam and neutralizing positive charge of the ion.
According to the technical scheme, the ion source base 11 is mounted on the base 30 through the angle adjusting mechanism 12, so that the emission angle of the Hall ion source 10 can be adjusted through rotation of the angle adjusting mechanism 12. When the ion source device is applied to a vacuum coating machine, the angle of the Hall ion source can be adjusted according to the coating requirement, so that the ion source coverage effect can be improved, and the use efficiency can be improved.
In order to make the technical solution of the present application clearer, the following provides a description of the ion source apparatus of the present application with reference to the accompanying drawings.
In an embodiment, referring to fig. 3, fig. 3 is a schematic view of an ion source mounting structure, in which a plurality of positioning holes 1101 may be disposed on an ion source base 11, and a hall ion source 10 is fixed in a set position on the ion source base 11 through any one of the positioning holes 1101. In practical application, a plurality of groups of positioning holes 1101 can be arranged, and the required position can be obtained by mounting according to the requirement, so that the coverage range of the hall ion source 10 can be adjusted, and the coverage range and the use efficiency are improved.
In one embodiment, the ion source mounting structure of the present application may further include a rotary joint 210, as shown in fig. 4, fig. 4 is a schematic view of a rotary joint structure, the hollow cathode 20 is mounted on the base 30 through the rotary joint 210, and the hollow cathode 20 is freely rotated through the rotary joint 210 to adjust the emission direction of the neutralizing electrons. As shown, the rotary joint 210 may be a universal joint, and may be fine-tuned in various directions.
Referring to fig. 5, fig. 5 is a schematic view illustrating the installation of the hall ion source, in the installation structure of the present application, the hall ion source 10 may be fixed on the ion source base 11 by a slide rail 1102, and the position of the hall ion source 10 is adjusted by sliding the slide rail 1102.
Referring to fig. 6, fig. 6 is a schematic view of a telescopic bracket structure, and the ion source mounting structure of the present application may further include a telescopic bracket 40, where one end of the telescopic bracket 40 is provided with a mounting base 410, and the other end is connected to the base 30. The height of the ion source 10 can be adjusted by the telescopic bracket 40, so that the distance from the object to be coated can be controlled.
In the ion source mounting structure of the above embodiment, by providing the rotary joint 210 for mounting the hollow cathode, the slide rail 1102 for mounting the hall ion source 10, the telescopic bracket 40 for mounting the base 30, and the like, when being used in a vacuum coater, the structure can adjust the electron emission direction of the hollow cathode 20, the covering position of the hall ion source 10, the height of the ion source from a coating object, and the like, thereby further improving the covering effect and the use efficiency of the ion source.
In one embodiment, the angle adjusting mechanism 12 may be provided with a driving motor therein, and the driving motor is used for driving and adjusting the angle of the hall ion source 10; the rotary joint 210 may be internally provided with a driving motor, and the driving motor is used for driving and adjusting the emission direction of the hollow cathode 20; a driving motor may be arranged in the slide rail 1102, and the driving motor drives and adjusts the position of the hall ion source 10 on the ion source base 11; the telescopic bracket 40 may be provided therein with a driving motor, which is driven to adjust the telescopic height.
In the ion source mounting structure of the embodiment, the angle adjusting mechanism 12, the rotary joint 210, the slide rail 1102, the telescopic bracket 40 and the like are all provided with driving motors, and the driving motors are used for driving and adjusting the telescopic height, so that the electrification adjustment can be realized, and the intellectualization is improved.
In an embodiment, referring to fig. 7, fig. 7 is an electrical structure diagram of the ion source apparatus, and a controller 50 and a human-computer interaction module 510 connected to the controller 50 may be further provided, where the controller 50 may be implemented based on hardware or devices such as an MCU, a processor, and an industrial personal computer. The controller 50 is connected to the angle adjusting mechanism 12, the rotary joint 210, the slide rail 1102, the telescopic bracket 40, and the like, and is configured to output a control signal to control the operation of the driving motors disposed in the angle adjusting mechanism 12, the rotary joint 210, the slide rail 1102, and the telescopic bracket 40. The human-machine interaction module 510 is used for receiving input optimal adjustment parameters, which include an optimal angle of the ion source, an optimal direction of the hollow cathode, an optimal position of the ion source, an optimal height of the bracket, and the like, and transmitting the input optimal adjustment parameters to the controller 50. The method for obtaining the optimal adjustment parameters can detect the surface thickness of the substrate after the vacuum coating machine is used to obtain the thickness parameters of a plurality of positions; and then calculating the optimal angle of the ion source, the optimal direction of the hollow cathode, the optimal position of the ion source, the optimal height of the bracket and the like according to the thickness data.
In the scheme of the embodiment, the controller 50 is used for controlling the driving motors of the angle adjusting mechanism 12, the rotary joint 210, the sliding rail 1102, the telescopic bracket 40 and the like, and the human-computer interaction module 510 is used for receiving input optimal adjusting parameters, wherein the optimal adjusting parameters can be obtained by calculating thickness parameters obtained by detecting the surface thickness of the substrate after the vacuum coating machine is used; therefore, the accurate calculation and control of the coverage range of the ion source are realized, and the using effect of the ion source device is greatly improved.
The following describes embodiments of an ion source apparatus provided by the present application, which includes at least one hall ion source 10, at least one hollow cathode 20, and the ion source mounting structure of any of the above embodiments; the hollow cathode 20 is arranged at a set position away from the Hall ion source 10 and provides neutralizing electrons for the Hall ion source 10; the hall ion source 10 and the hollow cathode 20 are mounted on an ion source mounting structure.
The ion source device of the embodiment can adjust the angle of the Hall ion source according to the coating requirement when being applied to the vacuum coating machine, thereby improving the coverage effect of the ion source and improving the use efficiency.
It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.
Claims (10)
1. An ion source mounting structure is applied to an ion source device, and is characterized in that the ion source device comprises at least one Hall ion source and at least one hollow cathode; the hollow cathode is arranged at a set position away from the Hall ion source and provides neutralizing electrons for the Hall ion source;
this mounting structure includes: the ion source comprises an ion source base, an angle adjusting mechanism and a base;
the Hall ion source is installed on the ion source base, the ion source base is installed on the base through the angle adjusting mechanism, and the ion source base rotates through the angle adjusting mechanism to adjust the emission angle of the Hall ion source.
2. The ion source mounting structure of claim 1, further comprising a rotary joint;
the hollow cathode is mounted on the base through a rotary joint, and the hollow cathode freely rotates through the rotary joint to adjust the emission direction of the neutralized electrons.
3. The ion source mounting structure of claim 1, wherein the hall ion source is fixed on the ion source base by a slide rail, and the position of the hall ion source is adjusted by sliding the slide rail.
4. The ion source mounting structure of claim 1, further comprising: the telescopic support, telescopic support's one end is equipped with the installation base, and the other end is connected the base.
5. The ion source mounting structure of claim 1, wherein a plurality of positioning holes are formed in the ion source base, and the hall ion source is fixed in a set position on the ion source base through any one of the positioning holes.
6. The ion source mounting structure according to any one of claims 1 to 4, wherein a drive motor is provided in the angle adjustment mechanism, and the drive motor is driven to adjust the angle of the Hall ion source;
a driving motor is arranged in the rotary joint and is used for driving and adjusting the sending direction of the hollow cathode;
a driving motor is arranged in the sliding rail and is used for driving and adjusting the position of the Hall ion source on the ion source base;
and/or
A driving motor is arranged in the telescopic support, and the telescopic height is driven and adjusted through the driving motor.
7. The ion source mounting structure of claim 6, further comprising a controller connected to the angle adjustment mechanism, the rotary joint, the slide rail, and the telescoping bracket, respectively; the controller is used for outputting control signals to control the angle adjusting mechanism, the rotary joint, the slide rail and the driving motor arranged in the telescopic bracket.
8. The ion source mounting structure of claim 7, further comprising a human-machine interaction module coupled to the controller for receiving input of optimal tuning parameters for transmission to the controller; wherein the optimal adjustment parameters comprise an optimal angle of the ion source, an optimal direction of the hollow cathode, an optimal position of the ion source and/or an optimal height of the bracket.
9. The ion source mounting structure of claim 8, wherein the method of obtaining the optimal tuning parameter comprises:
detecting the surface thickness of the substrate after the vacuum coating machine is used to obtain thickness parameters of a plurality of positions;
and calculating the optimal angle of the ion source, the optimal direction of the hollow cathode, the optimal position of the ion source and/or the optimal height of the bracket according to the thickness data.
10. An ion source apparatus comprising at least one hall ion source, at least one hollow cathode, and the ion source mounting structure of any one of claims 1-9;
the hollow cathode is arranged at a set position away from the Hall ion source and provides neutralizing electrons for the Hall ion source;
the Hall ion source and the hollow cathode are mounted on the ion source mounting structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010850672.7A CN111834186A (en) | 2020-08-21 | 2020-08-21 | Ion source mounting structure and ion source device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010850672.7A CN111834186A (en) | 2020-08-21 | 2020-08-21 | Ion source mounting structure and ion source device |
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| Publication Number | Publication Date |
|---|---|
| CN111834186A true CN111834186A (en) | 2020-10-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010850672.7A Pending CN111834186A (en) | 2020-08-21 | 2020-08-21 | Ion source mounting structure and ion source device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112885697A (en) * | 2021-01-11 | 2021-06-01 | 佛山市博顿光电科技有限公司 | Ion source mounting structure and vacuum equipment |
-
2020
- 2020-08-21 CN CN202010850672.7A patent/CN111834186A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112885697A (en) * | 2021-01-11 | 2021-06-01 | 佛山市博顿光电科技有限公司 | Ion source mounting structure and vacuum equipment |
| CN112885697B (en) * | 2021-01-11 | 2022-07-19 | 佛山市博顿光电科技有限公司 | Ion source mounting structure and vacuum equipment |
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