CN212991033U - Ion source device - Google Patents
Ion source device Download PDFInfo
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- CN212991033U CN212991033U CN202021343045.6U CN202021343045U CN212991033U CN 212991033 U CN212991033 U CN 212991033U CN 202021343045 U CN202021343045 U CN 202021343045U CN 212991033 U CN212991033 U CN 212991033U
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Abstract
The present application relates to an ion source apparatus comprising: a plurality of Hall ion sources, at least one hollow cathode and a base; the Hall ion sources are distributed and installed on the base, and the hollow cathode is arranged at a set position away from the Hall ions; the plurality of Hall ion sources are covered simultaneously, the hollow cathode provides neutralizing electrons for at least one Hall ion source, and the at least one hollow cathode provides neutralizing electrons for the plurality of Hall ion sources. According to the technical scheme, the coverage area can be enlarged through the design scheme of the plurality of Hall ion sources, and the design of the shared hollow cathode is adopted, so that the equipment cost is reduced.
Description
Technical Field
The application relates to the technical field of ion sources, in particular to an ion source device.
Background
The ion source is an applied scientific technology which has wide application, multiple types, multiple related sciences, strong technological property and rapid development. The Hall ion source is a very common ion source type, is mostly applied to the field of thin film deposition, and is used as a deposition auxiliary component to improve the physical properties of a thin film. The Hall ion source is characterized in that an anode is used for plasmatizing process gas under the cooperation of a strong axial magnetic field, the plasmatized gas is accelerated by the anode to separate gas ions and form ion beams, and the ion beams of the Hall ion source need to be supplemented with electrons to neutralize ion flows due to the fact that the axial magnetic field is too strong.
The common ion source adopts a tungsten wire (cathode) as a neutralization source, the traditional Hall ion source of the traditional ion source structure is round, the working area is in a conical range, but with the further requirement of production efficiency, the coverage area of the ion source is required to be larger and larger, and meanwhile, higher auxiliary efficiency is required. Because the coverage range of the Hall ion source is similar to the coverage effect of a Gaussian curve, the traditional Hall ion source is difficult to ensure the coverage uniformity.
SUMMERY OF THE UTILITY MODEL
The present application is directed to solving one of the above technical drawbacks, particularly the difficulty in ensuring uniformity of coverage, and provides an ion source apparatus.
An ion source apparatus comprising: a plurality of Hall ion sources, at least one hollow cathode and a base;
the Hall ion sources are distributed and installed on the base, and the hollow cathode is arranged at a set position away from the Hall ions;
the plurality of Hall ion sources are covered simultaneously, the hollow cathode provides neutralizing electrons for at least one Hall ion source, and the at least one hollow cathode provides neutralizing electrons for the plurality of Hall ion sources.
In one embodiment, the number of the Hall ion sources is two, and the number of the hollow cathodes is one;
the two Hall ion sources are adjacently arranged on the base, and the hollow cathode is arranged on one side of the two Hall ion sources and used for providing electrons for the two Hall ion sources.
In one embodiment the ion source apparatus further comprises: and the anode power supply module is used for respectively providing power for each Hall ion source, wherein each Hall ion source is connected to the anode power supply module in a series connection mode.
In one embodiment, the ion source apparatus further comprises: the air supply pipeline is connected with the air inlet of each Hall ion source; and a flow valve is installed in front of the air inlet of each Hall ion source and is used for controlling the flow of gas.
In one embodiment, the ion source apparatus further comprises: a retractable support; one end of the support is provided with an installation base, and the other end of the support is connected with the base.
In one embodiment, the hall ion source is mounted on the base through an angle adjusting mechanism, and the hall ion source rotates through the angle adjusting mechanism to adjust the angle of the hall ion source.
In one embodiment, the hollow cathode is mounted on the base through a rotary joint, and the Hall ion source freely rotates through the rotary joint to adjust the electron emission direction.
In one embodiment, the ion source apparatus further comprises: a circulating water cooling loop; and the water cooling loops of the Hall ion sources are connected into the circulating water cooling loop in series.
In one embodiment, the angle adjusting mechanism is driven to rotate by an internal motor, and the rotary joint is driven to adjust the direction by the internal motor.
In one embodiment, the ion source apparatus further comprises a controller respectively connected to the flow valve, the angle adjustment mechanism and the rotary joint;
the controller is used for adjusting the flow of the flow valve, controlling the angle adjusting mechanism to adjust the covering direction of each Hall ion source, and/or controlling the rotation direction of the rotary joint to control the electron emission direction of the hollow cathode.
The ion source device comprises a plurality of Hall ion sources which are distributed and installed on the base, the Hall ion sources are covered simultaneously, and the hollow cathode provides neutralizing electrons for at least one Hall ion source. By adopting the design scheme of a plurality of Hall ion sources, the coverage area can be improved, and the design of a shared hollow cathode is adopted, so that the equipment cost is also reduced.
In addition, the ion source device of the application also designs a shared anode power supply module, a shared gas supply pipeline and a shared circulating water cooling loop, so that the equipment cost can be further reduced.
Furthermore, the ion source device of the application designs the flow valve, the angle adjusting mechanism and the rotary joint, can be controlled by the controller, can automatically control and adjust the power and the coverage range of the ion source, and further improves the automation and the intelligent level of equipment.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic view of an ion source;
FIG. 2 is a schematic diagram of a dual head ion source arrangement;
FIG. 3 is a schematic diagram of a power supply module of the ion source apparatus;
FIG. 4 is a schematic diagram of a gas supply duct structure of the ion source apparatus;
FIG. 5 is a schematic view showing a state in which the angle adjusting mechanisms are arranged in a plane;
FIG. 6 is a schematic view of the angle adjusting mechanism after rotating the angle;
FIG. 7 is a schematic view of the mounting position of the rotary joint;
FIG. 8 is an enlarged view of a joint selecting one example of the joint;
FIG. 9 is a schematic diagram of a recirculating water cooling loop;
FIG. 10 is a control topology of a controller of an embodiment;
fig. 11 is a diagram of a coverage profile simulation of an ion source apparatus.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, or operations, but do not preclude the presence or addition of one or more other features, integers, steps, operations, or groups thereof.
The application provides an ion source device, including: a plurality of hall ion sources, at least one hollow cathode, and a base 30. Referring to fig. 1, fig. 1 is a schematic view of an ion source structure, which is a top view, and three hall ion sources A, B, C (101-103 in the corresponding figure) are taken as an example.
The Hall ion sources are distributed and installed on the base 30, and the hollow cathode is arranged at a set position away from the Hall ions; the plurality of Hall ion sources are simultaneously covered, the hollow cathode provides neutralizing electrons for at least one Hall ion source, and the at least one hollow cathode provides neutralizing electrons for the plurality of Hall ion sources. As in fig. 1, wherein the hollow cathode (corresponding to 101 in the figure) matches the hall ion source A, B; a hollow cathode (corresponding to 102 in the figure) is matched with the Hall ion source C; therefore, the design scheme for improving the structure of the coverage area is realized.
In actual work, each Hall ion source and the hollow cathode work simultaneously, process gas enters a discharge area from the bottom of an anode of the Hall ion source, when anode voltage is applied to the anode of the Hall ion source, electrons move to the anode under the action of an electric field, and because a magnetic field enables the electrons to advance around magnetic lines of force in a spiral track and collide with atoms, ionized ions of the electrons are accelerated under the action of the Hall electric field to obtain corresponding energy, the hollow cathode generates thermal electrons, the thermal electrons and partial thermal electrons emitted by the hollow cathode form plasma, and the plasma is emitted to act with a substrate to achieve the purpose of cleaning and auxiliary coating. The hollow cathode has the functions of supplying electrons to the discharge area, compensating space charge of the ion beam and neutralizing positive charge of the ion.
In order to make the technical solution of the present application clearer, the following provides a description of the ion source apparatus of the present application with reference to the accompanying drawings.
Referring to fig. 2, fig. 2 is a schematic structural view of a dual head ion source apparatus; in the figure, a double-head ion source device is formed by a hall ion source A, B (corresponding to 101 and 102 in the figure) and a hollow cathode. The principle of the solution of more than two hall ion sources is similar, and the following embodiments of the present application are exemplified by two hall ion sources, and do not limit the structure of the ion source device. As shown in the figure, the number of the Hall ion sources is two, and the number of the hollow cathodes is one; wherein two hall ion sources A, B are adjacently mounted on the base 30, and the hollow cathode 201 is mounted on one side of the hall ion source A, B, and is used in cooperation with the hall ion source A, B for providing electrons to the hall ion source A, B.
In one embodiment, the ion source apparatus provided herein may further include: a telescoping support 310; the bracket 310 has a mounting base 320 at one end and a base 30 at the other end. As shown in fig. 2, the hall ion source A, B and the hollow cathode (r) can be easily mounted and fixed by the bracket 310. The whole ion source device is arranged in the vacuum coating equipment through the mounting base 320, and the distance between the Hall ion source and the substrate can be freely controlled through the support 310 in a telescopic design, so that the ion beam can better act with the substrate to achieve the purposes of cleaning and auxiliary coating.
In one embodiment, referring to fig. 3, fig. 3 is a schematic diagram of a power supply module of an ion source apparatus; the application provides a power supply part of an ion source device, which comprises: a hollow cathode power module 22 (not shown) and an anode power module 12; wherein, the hollow cathode power supply module 22 is used for providing power supply for the hollow cathode; the anode power supply module 12 is used for respectively providing power for each hall ion source, wherein each hall ion source is connected to the anode power supply module 12 in a series connection mode.
In the above embodiment, a plurality of hall ion sources are connected in series and share one anode power supply module 12, so that the overall cost of the power supply equipment is saved.
In one embodiment, referring to fig. 4, fig. 4 is a schematic view of a gas supply duct 40 of an ion source apparatus; the ion source apparatus provided by the present application may further include: a gas supply duct 40 connected to the gas inlet of each hall ion source; a flow valve 401 is installed in front of an air inlet of each hall ion source, and the flow valve 401 is used for controlling the flow of gas. The flow valve A and the flow valve B are respectively corresponding to the figure; respectively arranged in front of air inlets of the Hall ion sources A and B.
According to the scheme of the embodiment, the working current and the coverage range of the Hall ion source are conveniently controlled by controlling the gas flow of the working Hall ion source, for example, in the figure, the power supply module is conveniently supplied by supplying power in a series mode, and as the currents flowing through the two Hall ion sources are basically equal, the coverage range of ions sent by the Hall ion source is adjusted, and the working coverage range and the working power of the Hall ion source are controlled by controlling the flow of the reaction gas.
In one embodiment, the present application provides an ion source apparatus, the hall ion source is mounted on the base 30 through the angle adjusting mechanism 13, and the hall ion source is rotated through the angle adjusting mechanism 13 to adjust the angle of the hall ion source. Referring to fig. 5 and 6, fig. 5 and 6 are schematic views of the installation position of the angle adjustment mechanism 13, the angle adjustment mechanism 13 may be implemented by a hinge, fig. 5 is a schematic view of a planar arrangement state of the angle adjustment mechanism, and fig. 6 is a schematic view of a state after the angle adjustment mechanism rotates by an angle, when in use, the angle of the hall ion source may be adjusted according to requirements, so as to control the direction of electrons emitted by the hall ion source, on one hand, the reaction of the hall ion source with thermal electrons of the hollow cathode may be controlled, and also the coverage of the ion source may be controlled.
In addition, for the hollow cathode, the hollow cathode can also be installed on the base 30 through the rotary joint 23, referring to fig. 7 and 8, fig. 7 and 8 are schematic installation views of the rotary joint 23, wherein fig. 7 is a schematic installation position of the rotary joint, fig. 8 is an enlarged view of the joint of an example of the selected joint, and through the rotary joint 23, the hall ion source can freely rotate to adjust the electron emission direction so as to better send out thermions and emitted electrons of the hall ion source to perform neutralization, so that the automatic control of the operation of the ion source device can be realized.
Preferably, both the angle adjusting mechanism 13 and the rotary joint 23 can be driven by a built-in motor, for example, the angle adjusting mechanism 13 can be driven by the motor to rotate an angle, and the rotary joint 23 can also be driven by the motor to adjust the direction.
In one embodiment, the ion source apparatus provided herein may further include: a circulating water cooling circuit 50; wherein, the water cooling loop of each hall ion source is connected in series into the circulating water cooling loop 50. Referring to fig. 9, fig. 9 is a schematic diagram of a water cooling circulation loop 50, a water inlet and a water outlet of each hall ion source are connected by one water cooling loop to form a common circulation loop, and a dotted arrow in the figure is a water circulation direction, so that the whole ion source device can perform water cooling heat dissipation by only designing one circulation device 501, which not only improves the utilization efficiency of the device, but also reduces the cost of the device.
In one embodiment, the ion source apparatus of the present application may further design a controller 60 for controlling components of the ion source apparatus, and the controller 60 may be implemented based on hardware or devices such as an MCU, a processor, and an industrial personal computer. As in the embodiment of the present application, the flow valve 401, the angle adjustment mechanism 13, and the rotary joint 23 may be controlled and adjusted by the controller 60; including adjusting the flow rate of the flow valve 401, controlling the angle adjusting mechanism 13 to adjust the coverage direction of each hall ion source, controlling the rotation direction of the rotary joint 23 to control the electron emission direction of the hollow cathode, and the like.
Referring to fig. 10, fig. 10 is a control topology diagram of the controller 60 according to an embodiment, wherein the controller 60 is respectively connected with a flow valve 401, an angle adjusting mechanism 13, a rotary joint 23, an anode power supply module 12, a circulation device 501, and the like.
In actual work, the controller 60 can control the anode power supply module 12 to supply power to the hall ion source, and simultaneously control the flow of the process gas by controlling the opening of the flow valve 401, so that the ionization degree of the hall ion source is controlled, a controllable and adjustable ion beam is generated, and the intelligent control of the size of the ion beam emitted by the hall ion source is realized.
In practical operation, the controller 60 can control the angle adjusting mechanism 13, and the controller 60 can adjust the angle of the angle adjusting mechanism 13 according to the calculated coverage condition, so as to adjust the coverage range, referring to fig. 11, where fig. 11 is a coverage distribution simulation diagram of the ion source apparatus, and the controller 60 calculates the control rotation angle according to the control range required by the dual ion sources, and then outputs a control signal to control the angle of the angle adjusting mechanism 13, so as to achieve intelligent control of the coverage range of the hall ion source.
In actual work, the controller 60 can control the rotation direction of the rotary joint 23, so that the hollow cathode can calculate the direction of the emitted hot electrons of the hollow cathode according to the neutralization degree of the electrons generated by the Hall ion source, accurately calculate the direction of the rotary joint 23, and then output a control signal to control the direction of the rotary joint 23, thereby realizing the intelligent control of the emission direction of the hollow cathode.
In actual work, the controller 60 can also control the circulation device 501, the controller 60 detects the temperature of the hall ion source through the sensor, so that the heat dissipation state can be accurately obtained, when the temperature is too high, the circulation speed can be accelerated, and intelligent heat dissipation of the hall ion source is realized.
Synthesize the scheme of above-mentioned each embodiment, the ion source device of this application design has designed a plurality of hall ion sources and covers jointly, need not to work by many sets of ion sources simultaneously, and many hall ion sources list cavity negative pole drive reduces structure complexity and cost, simple structure, simple to operate, and angularly adjustable can guarantee multifold coverage efficiency, can use in the super big equipment, and the coverage homogeneity is better.
It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
An ion source sputtering system comprises the target rotating structure of any one of the above embodiments.
The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.
Claims (13)
1. An ion source apparatus, comprising: a plurality of Hall ion sources, at least one hollow cathode and a base;
the Hall ion sources are distributed and installed on the base, and the hollow cathode is arranged at a set position away from the Hall ions;
the plurality of Hall ion sources are covered simultaneously, the hollow cathode provides neutralizing electrons for at least one Hall ion source, and the at least one hollow cathode provides neutralizing electrons for the plurality of Hall ion sources.
2. The ion source apparatus of claim 1, wherein the number of the hall ion sources is two, and the number of the hollow cathodes is one;
the two Hall ion sources are adjacently arranged on the base, and the hollow cathode is arranged on one side of the two Hall ion sources and used for providing electrons for the two Hall ion sources.
3. The ion source apparatus of claim 1, further comprising: and the anode power supply module is used for respectively providing power for each Hall ion source, wherein each Hall ion source is connected to the anode power supply module in a series connection mode.
4. The ion source apparatus of claim 1, further comprising: the air supply pipeline is connected with the air inlet of each Hall ion source; and a flow valve is installed in front of the air inlet of each Hall ion source and is used for controlling the flow of gas.
5. The ion source apparatus of claim 1, further comprising: a retractable support; one end of the support is provided with an installation base, and the other end of the support is connected with the base.
6. The ion source device of claim 1, wherein the hall ion source is mounted on the base by an angle adjustment mechanism, and the hall ion source is rotated by the angle adjustment mechanism to adjust the angle of the hall ion source.
7. The ion source apparatus of claim 1, wherein the hollow cathode is mounted on the base via a rotary joint, and the hall ion source is freely rotated via the rotary joint to adjust an electron emission direction.
8. The ion source apparatus of claim 1, further comprising: a circulating water cooling loop; and the water cooling loops of the Hall ion sources are connected into the circulating water cooling loop in series.
9. The ion source apparatus of claim 6, wherein the angle adjustment mechanism is driven to rotate by an internal motor.
10. The ion source apparatus of claim 7, wherein the rotary joint is driven by a built-in motor to adjust the direction.
11. The ion source apparatus of claim 4, further comprising a controller connected to the flow valve;
and the controller is used for adjusting the flow rate of the flow valve.
12. The ion source apparatus of claim 9, further comprising a controller coupled to the angle adjustment mechanism;
and the controller is used for controlling the angle adjusting mechanism to adjust the covering direction of each Hall ion source.
13. The ion source apparatus of claim 10, further comprising a controller coupled to the rotary joint;
the controller is used for controlling the rotation direction of the rotary joint so as to control the electron emission direction of the hollow cathode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021343045.6U CN212991033U (en) | 2020-07-09 | 2020-07-09 | Ion source device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021343045.6U CN212991033U (en) | 2020-07-09 | 2020-07-09 | Ion source device |
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| CN212991033U true CN212991033U (en) | 2021-04-16 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785599A (en) * | 2020-07-09 | 2020-10-16 | 中山市博顿光电科技有限公司 | Ion source device |
| CN111834186A (en) * | 2020-08-21 | 2020-10-27 | 中山市博顿光电科技有限公司 | Ion source mounting structure and ion source device |
-
2020
- 2020-07-09 CN CN202021343045.6U patent/CN212991033U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785599A (en) * | 2020-07-09 | 2020-10-16 | 中山市博顿光电科技有限公司 | Ion source device |
| CN111834186A (en) * | 2020-08-21 | 2020-10-27 | 中山市博顿光电科技有限公司 | Ion source mounting structure and ion source device |
| CN111834186B (en) * | 2020-08-21 | 2024-10-15 | 中山市博顿光电科技有限公司 | Ion source mounting structure and ion source device |
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