CN111823120A - Semiconductor wafer polishing equipment and polishing method - Google Patents

Semiconductor wafer polishing equipment and polishing method Download PDF

Info

Publication number
CN111823120A
CN111823120A CN202010795447.8A CN202010795447A CN111823120A CN 111823120 A CN111823120 A CN 111823120A CN 202010795447 A CN202010795447 A CN 202010795447A CN 111823120 A CN111823120 A CN 111823120A
Authority
CN
China
Prior art keywords
polishing
throwing
distance
disk
throwing mechanism
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010795447.8A
Other languages
Chinese (zh)
Inventor
刘建伟
祝斌
袁祥龙
武卫
由佰玲
刘园
刘姣龙
裴坤羽
孙晨光
王彦君
常雪岩
杨春雪
谢艳
张宏杰
刘秒
吕莹
徐荣清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin Zhonghuan Advanced Material Technology Co Ltd
Zhonghuan Advanced Semiconductor Materials Co Ltd
Original Assignee
Tianjin Zhonghuan Advanced Material Technology Co Ltd
Zhonghuan Advanced Semiconductor Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianjin Zhonghuan Advanced Material Technology Co Ltd, Zhonghuan Advanced Semiconductor Materials Co Ltd filed Critical Tianjin Zhonghuan Advanced Material Technology Co Ltd
Priority to CN202010795447.8A priority Critical patent/CN111823120A/en
Publication of CN111823120A publication Critical patent/CN111823120A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/04—Headstocks; Working-spindles; Features relating thereto
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/20—Drives or gearings; Equipment therefor relating to feed movement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention relates to a semiconductor wafer polishing device and a polishing method, which comprises the following steps: a placing mechanism for placing a plurality of wafers; the upper polishing mechanism and the lower polishing mechanism are used for polishing the two sides of the wafer and rotate independently; the measuring mechanism is used for measuring the distance from different positions of the lower end surface of the upper throwing mechanism to the corresponding position of the lower end surface of the lower throwing mechanism; the placing mechanism is arranged in the upper end face of the lower throwing mechanism and is driven by the lower throwing mechanism to rotate; the upper throwing mechanism and the lower throwing mechanism can adjust the distance between the upper throwing mechanism and the lower throwing mechanism so as to adjust the variable of the lower end surface shape of the upper throwing mechanism and the variable of the upper end surface shape of the lower throwing mechanism. The invention not only can accurately ensure the geometric parameters of the wafer, but also can save the polishing time, the adjustment of the deformation amount of the single wafer and the polishing time is improved by about 96 percent, the polishing efficiency is high, and the control precision is high.

Description

Semiconductor wafer polishing equipment and polishing method
Technical Field
The invention belongs to the technical field of semiconductor silicon wafer polishing, and particularly relates to semiconductor wafer polishing equipment and a semiconductor wafer polishing method.
Background
As semiconductor wafer fabrication has become increasingly cost-conscious and large-area silicon wafers have advantages in the number of chips produced per unit and per unit cost, semiconductor silicon substrate wafers tend to have larger dimensions, ranging from the first 2 inches and 3 inches to the current 8 inches and 12 inches and 18 inches in development, with increasing silicon wafer area, and the resulting increase in the geometric requirements of the 12-inch wafer for the polished silicon wafer. In the process of polishing the wafer, how to ensure the surface flatness of the wafer, and meanwhile, the thickness change condition of the wafer is monitored in real time and is timely adjusted through effectively controllable polishing equipment.
Disclosure of Invention
The invention provides a semiconductor wafer polishing device and a polishing method, which are particularly suitable for double-side polishing of large-size wafers, not only can accurately ensure the geometric parameters of the wafers, but also can save the polishing time, and the polishing time for adjusting the deformation of the single wafer is improved by about 96%.
In order to solve the technical problems, the invention adopts the technical scheme that:
a semiconductor wafer polishing apparatus comprising:
a placing mechanism for placing a plurality of wafers;
the upper polishing mechanism and the lower polishing mechanism are used for polishing the two sides of the wafer and rotate independently;
the measuring mechanism is used for measuring the distance from different positions of the lower end surface of the upper throwing mechanism to the corresponding position of the lower end surface of the lower throwing mechanism;
the placing mechanism is arranged in the upper end face of the lower throwing mechanism and is driven by the lower throwing mechanism to rotate;
the upper throwing mechanism and the lower throwing mechanism can adjust the distance between the upper throwing mechanism and the lower throwing mechanism so as to adjust the variable of the lower end surface shape of the upper throwing mechanism and the variable of the upper end surface shape of the lower throwing mechanism.
Furthermore, the placing mechanism comprises an outer ring disc provided with an inner gear and a plurality of inner ring discs provided with outer gears;
the inner ring disc is arranged on the inner side of the outer ring disc and meshed with the outer ring disc;
the inner ring discs are meshed with each other;
preferably, the inner ring discs are all meshed with a shaft center wheel arranged at the center of the upper end face of the lower throwing mechanism.
Further, the upper throwing mechanism comprises an upper throwing disc, an upper pressure disc and an upper hydraulic system which are arranged right above the upper throwing disc, wherein,
and the upper hydraulic system is pressurized or decompressed to control the upper pressure plate to drive the upper throwing plate to deform towards one side far away from the lower throwing mechanism or to deform towards one side close to the lower throwing mechanism so as to adjust the distance between the upper throwing plate and the upper end surface of the lower throwing mechanism.
Further, the lower throwing mechanism comprises a lower throwing disc, a lower pressing disc and a lower hydraulic system which are arranged right below the lower throwing disc, wherein,
and the lower hydraulic system pressurizes or decompresses to control the lower pressing disc to drive the lower throwing disc to deform towards the side far away from or close to the upper throwing disc so as to adjust the distance between the lower throwing disc and the lower end face of the upper throwing mechanism.
Further, the measuring mechanism includes:
the first measuring part is used for measuring the distance from one side of the inner diameter circle of the upper throwing disc to the lower throwing disc;
the second measuring part is used for measuring the distance from the middle position between the inner diameter circle and the outer diameter circle of the upper throwing disc to the lower throwing disc;
and the third measurement is used for measuring the distance from one side of the outer diameter circle of the upper throwing disc to the lower throwing disc;
the first measuring part, the second measuring part and the third measuring part are arranged on the same side.
Further, the first measuring piece is arranged on one side, close to the inner diameter, of the upper throwing disk;
the third measuring piece is arranged on one side, close to the outer diameter, of the upper throwing disc;
the second measuring part is arranged between the first measuring part and the third measuring part and is close to one side of the third measuring part.
A semiconductor wafer polishing method using the polishing apparatus as set forth in any one of the above, comprising the steps of:
collecting the inner side distance, the middle distance and the outer side distance between the lower end face of the upper throwing mechanism and the upper end face of the lower throwing mechanism;
processing the inner side distance, the middle distance and the outer side distance according to a set formula to obtain a lower end surface shape variable of the upper throwing mechanism and an upper end surface shape variable of the lower throwing mechanism;
and the pressure or retraction of the upper throwing mechanism and the lower throwing mechanism is controlled to adjust the variable of the lower end surface shape of the upper throwing mechanism and the variable of the upper end surface shape of the lower throwing mechanism.
Further, the variable of the lower end surface of the upper throwing mechanism is the difference between the inner side distance and the outer side distance.
Further, the variable of the upper end surface of the lower throwing mechanism is the difference between the middle distance and the internal and external correction distances;
the inner and outer correction distances are the sum of the product of the outer distance and a first correction coefficient and the product of the inner distance and a second correction coefficient.
Further, the sum of the first correction coefficient and the second correction coefficient is 1;
preferably, the first correction coefficient is 0.60 to 0.90.
The invention designs a semiconductor wafer polishing device and a polishing method, which are particularly suitable for double-side polishing of large-size wafers, wherein the geometric parameters of the wafers are accurately ensured by adjusting the distance between an upper polishing mechanism and a lower polishing mechanism to adjust the surface shape variable at the lower end of the upper polishing mechanism and the surface shape variable at the upper end of the lower polishing mechanism, the polishing time can be saved, the polishing time for adjusting the shape variable of the wafers is improved by about 96%, the polishing efficiency is high, the control precision is high, the polishing quality of the wafers is ensured, the quality of the wafers is improved, and the production cost is reduced.
Drawings
FIG. 1 is a schematic diagram of a semiconductor wafer polishing apparatus according to one embodiment of the present invention;
FIG. 2 is a top view of a placement mechanism according to an embodiment of the present invention;
FIG. 3 is a schematic view of the position of the measuring mechanism on the polishing pad in accordance with one embodiment of the present invention.
In the figure:
100. placing mechanism 110, outer ring disc 120 and inner ring disc
200. An upper polishing mechanism 210, an upper polishing disk 220 and an upper polishing pad
230. An upper pressure plate 240, an upper hydraulic system 241 and an upper connecting rod I
242. An upper connecting rod II 243, an upper adjusting rod I244 and an upper adjusting rod II
245. Upper hydraulic cylinder 246, upper air inlet pipe 247 and upper air outlet pipe
250. Polishing liquid tube group 251, polishing liquid tube I252 and polishing liquid tube II
253. Three 300 polishing liquid pipes, a lower polishing mechanism 310 and a lower polishing disc
320. Lower polishing pad 330, lower platen 340, lower hydraulic system
341. A lower connecting rod I342, a lower connecting rod II 343 and a lower adjusting rod I
344. A second lower adjusting rod 345, a lower hydraulic oil cylinder 346 and a lower air inlet pipe
347. Lower exhaust pipe 350, axle center wheel 400 and measuring mechanism
410. A first measuring member 420, a second measuring member 430, and a third measuring member
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
The present embodiment provides a semiconductor wafer polishing apparatus, as shown in fig. 1, comprising: the device comprises a placing mechanism 100 for placing a plurality of wafers, an upper polishing mechanism 200 and a lower polishing mechanism 300 which are used for polishing the two sides of the wafers and rotate independently, a measuring mechanism 400 for measuring the distance from different positions of the lower end surface of the upper polishing mechanism 200 to corresponding positions of the lower end surface of the lower polishing mechanism 300, and a controller for collecting and processing the measuring data of the measuring mechanism 400 and obtaining the variable of the lower end surface shape of the upper polishing mechanism 200 and the variable of the upper end surface shape of the lower polishing mechanism 300. Wherein the controller is a common PLC controller, such as Siemens S7-200SMARTPLC, and the drawings are omitted; the controller is connected with the measuring mechanism 400, the upper throwing mechanism 200 and the lower throwing mechanism 300 respectively. The placing mechanism 100 is arranged in the upper end surface of the lower throwing mechanism 300 and is driven to rotate by the lower throwing mechanism 300; the upper throwing mechanism 200 and the lower throwing mechanism 300 rotate reversely at different speeds, and the upper throwing mechanism 200 and the lower throwing mechanism 300 can mutually and independently adjust the distance between the lower end surface of the upper throwing mechanism 200 and the upper end surface of the lower throwing mechanism 300 so as to adjust the lower end surface shape variable of the upper throwing mechanism 200 and the upper end surface shape variable of the lower throwing mechanism 300.
Specifically, as shown in fig. 2, the placement mechanism 100 includes an outer ring disk 110 provided with an internal gear and a plurality of inner ring disks 120 provided with external gears, and the outer ring disk 110 has an outer diameter smaller than that of the lower throw disk 310 in the lower throw mechanism 300 and is placed in the upper end face of the lower throw disk 310. The inner ring disks 120 are a plurality of circular disks having the same structure, and the inner ring disks 120 are disposed on the inner side of the outer ring disk 110 and are uniformly disposed along the circumference of the outer ring disk 110. When the inner ring discs 120 are in gear engagement with the outer ring disc 110, the adjacent inner ring discs 120 are in mutual engagement; and all the inner ring disks 120 are engaged with the external gear of the hub wheel 350 provided at the center of the upper end surface of the lower throwing mechanism 300, and the hub wheel 350 is provided through the axial center of the lower throwing disk 310 in the lower throwing mechanism 300. Since the outer ring plate 110 is placed on the lower throwing plate 310 and has the same rotation speed and rotation direction as the lower throwing plate 310; the diameter of the upper throwing disk 210 in the upper throwing mechanism 200 is slightly smaller than that of the lower throwing disk 310, i.e., the outer ring disk 110, and the upper throwing disk 210 turns in the opposite direction to the lower throwing disk 310 and the upper throwing disk 210The rotating speed is greater than that of the lower throwing disk 310, namely, the upper throwing disk 210 rotates in the opposite direction to that of the outer ring disk 110; the rotation directions of the arbor wheel 350 and the lower throwing disk 310 are the same but the rotation speeds are different, and because the external diameter of the arbor wheel 350 is smaller, in order to ensure the running consistency of the arbor wheel 350 and the lower throwing disk 310, the rotation speed of the arbor wheel 350 is higher, and the rotation speed of the lower throwing disk 310 is lower; further, it can be seen that, because there is a certain speed ratio difference between the inner ring disk 120 and the outer ring disk 110, the inner ring disk 120 carrying the wafer can perform a planetary motion around the axis wheel 350, and at the same time, the upper throwing disk 210 rotates in the opposite direction with respect to the lower throwing disk 310, so that the wafer is also subjected to the opposite rotation of the upper throwing disk 210 while rotating with the lower throwing disk 310. Meanwhile, an upper polishing pad 220 is bonded to the lower end surface of the upper polishing disk 210, a lower polishing pad 320 is bonded to the upper end surface of the lower polishing disk 310, and the wafer is ground by the upper polishing pad 220 and the lower polishing pad 320 rotating up and down in opposite directions in a double-sided contact manner by using alkaline polishing solution and SiO sprayed in real time2The particles carry out chemical mechanical polishing on the double-sided surface of the wafer, thereby realizing the double-sided polishing of the wafer and removing the double-sided damaged layer.
In this example, the polishing solutions selected were NaOH lye and SiO2The mixed liquid of particles, NaOH has chemical corrosion effect in the polishing process, so that the silicon atoms on the surface of the wafer are converted into Na2SiO3While SiO2The particles generate a mechanical grinding effect on the surface of the wafer, and the products of the two effects continuously enter the polishing solution, so that the polishing effect on the surface damage layer is realized. Wherein the chemical reaction formula of the polishing is:
Si+2NaOH+H2O—>Na2SiO3+2H2
as shown in fig. 1, the upper polishing mechanism 200 includes an upper polishing disk 210, an upper polishing pad 220 disposed below the upper polishing disk 210, and an upper platen 230 and an upper hydraulic system 240 disposed directly above the upper polishing disk 210, wherein the upper polishing pad 220 is adhered to the lower end surface of the upper polishing disk 210 and has an outer diameter matched with the outer diameter of the upper polishing disk 210; the upper pressure plate 230 is adjustably connected with the upper throwing plate 210. To ensure that the upper polishing pad 220 is completely free on the outer ring disk 110 in the placement mechanism 100 and covers all wafers to the full maximum, the outer diameter of the upper polishing pad 220 is slightly smaller than the inner diameter of the outer ring disk 110, with a 5-10mm difference in single-sided diameter. The upper platen 230 is of an inverted cone structure and covers the upper end surface of the upper throwing disk 210, and the upper hydraulic system 240 pressurizes or depressurizes to control the outer edge portion of the upper throwing disk 210 driven by the upper platen 230 to deform away from the lower throwing mechanism 300 or to deform close to the lower throwing mechanism 300, so as to adjust the distance between the upper throwing disk 210 and the upper end surface of the lower throwing mechanism 300.
The upper hydraulic system 240 comprises a plurality of upper connecting rods I241 and two upper connecting rods 242 which are connected with the upper pressure plate 230 and the upper throwing plate 210, one sides of the upper connecting rods I241 and two upper connecting rods 242 are respectively provided with an upper adjusting rod I243 and an upper adjusting rod II 244 which are connected with the lower end faces of the upper connecting rods I241 and two upper connecting rods 242, the upper adjusting rods I243 and two upper adjusting rods 244 are communicated with an upper hydraulic oil cylinder 245, the upper hydraulic oil cylinder 245 is connected with an external air pump through an upper air inlet pipe 246, and meanwhile, an air outlet of the upper hydraulic oil cylinder 245 is connected with the upper.
Specifically, the lower end surfaces of the first upper connecting rod 241 and the second upper connecting rod 242 are connected through a pneumatic bolt, that is, pneumatic threads are arranged on the lower end surfaces of the first upper connecting rod 241 and the second upper connecting rod 242, the first upper connecting rod 241 is arranged near the middle of the upper pressure plate 230, the second upper connecting rod 242 is arranged near the outer edge of the upper pressure plate 230, the first upper connecting rod 241 and the second upper connecting rod 242 are respectively and uniformly arranged along the circumference of the positions of the first upper connecting rod 241 and the second upper connecting rod 242, the number of the first upper connecting rod 241 and the number of the second upper connecting rod 242 are at least three, and the purpose of ensuring the uniformity of the connection stress.
During pressure control, the lower end faces of the first upper adjusting rod 243 and the second upper adjusting rod 244 are pressed to tighten the pneumatic threads, namely the threads move upwards and are tightly connected with the first upper connecting rod 241 and the second upper connecting rod 242, so that the upper polishing disk 210 is connected and tightened with the upper pressure disk 230, the upper polishing disk 210 is pulled upwards, the distance between the outer edge and middle area of the upper polishing disk 210 and the lower polishing disk 310 is increased, and the polishing effect of the upper polishing pad 220 and the lower polishing pad 320 on wafers is weakened. Accordingly, when the pressure relief retraction control is performed, the lower end surfaces of the first upper adjusting rod 243 and the second upper adjusting rod 244 are pulled to unscrew the pneumatic screw threads, so that the screw threads move downwards and are unscrewed from the first upper connecting rod 241 and the second upper connecting rod 242, the upper polishing disk 210 is not tightly connected with the upper pressure disk 230 any more, and the upper polishing disk 210 is spun downwards, so that the distance between the outer edge and middle area of the upper polishing disk 210 and the lower polishing disk 310 is reduced, and the wafer polishing effect of the upper polishing pad 220 and the lower polishing pad 320 is enhanced.
Furthermore, by adjusting the air pressure connected to the first upper adjustment rod 243 and the second upper adjustment rod 244, the tightness of the connection between the first upper link 241 and the second upper link 242 can be adjusted, and further, the tightness of the connection between the upper polishing disk 210 and the upper pressure disk 230 can be adjusted, and further, the distance between the upper polishing disk 210 and the lower polishing disk 310 can be adjusted, so that the polishing strength of the upper polishing pad 220 and the lower polishing pad 320 on the wafer can be adjusted. According to the special mode that the upper throwing disc 210 is connected with the upper pressing disc 230, the hydraulic control adjusting system is adopted for adjustment, only the connecting rod on one side of the excircle of the upper throwing disc 210 and in the middle of the upper throwing disc 210 is needed to be controlled, the deformation bending direction of the upper throwing disc 210 can be adjusted, the adjustment can be carried out repeatedly, the precision is high, and the controllability is good.
Further, the upper polishing mechanism 200 is further provided with a plurality of pipeline groups which vertically penetrate through the upper polishing disk 210 and the upper pressure disk 230 and are used for circulation of polishing liquid and for placing the polishing liquid pipe group 250, wherein the pipeline groups comprise an inner pipeline which is arranged close to one side of the inner circle in the center of the upper polishing disk 210, an outer pipeline which is arranged close to one side of the outer circle of the upper polishing disk 210, and a middle pipeline which is arranged between the inner pipeline and the outer pipeline and is arranged close to one side of the outer pipeline, and the inner pipeline, the middle pipeline and the outer pipeline are respectively matched with the first polishing liquid pipe 251, the second polishing liquid pipe 252 and the third polishing liquid pipe 253 in the polishing liquid pipe. The polishing liquid flows into the upper polishing pad 220 through the first polishing liquid pipe 251, the second polishing liquid pipe 252 and the third polishing liquid pipe 253, flows into the lower polishing pad 320 along with the clearance holes on the inner ring disk 120, and then completely flows into the upper and lower surfaces of the wafer, so that the damaged layers on the upper and lower surfaces of the wafer are polished.
The polishing solution pipe groups 250 which are arranged to run through the upper polishing disc 210 and the upper pressure disc 230 are distributed according to the geometric parameter monitoring positions on the surface of the wafer, so that not only can all wafers be uniformly soaked by polishing solution in the polishing process be ensured, but also all polishing solution pipes in the polishing solution pipe groups 250 can be ensured to be unblocked and free from blockage, the stability is good, and the flowing consistency of the polishing solution is ensured; but also reduces the polishing solution waste and improves the utilization rate of the polishing solution to the maximum extent.
In the embodiment, the polishing solution tubes one 251, two 252 and three 253 are uniformly arranged along the circumference of the upper polishing disc 210, and at least three groups of polishing solution tubes one 251 are provided, because the diameter of the circle on which the polishing solution tubes two 252 and three 253 are arranged is larger, the number of the polishing solution tubes two 252 and three 253 is larger than that of the polishing solution tubes one 251 in order to ensure the uniformity of the distribution and circulation of the polishing solution; the number of the slurry tubes one 251, two 252 and three 253 may be determined according to practical circumstances, and is not particularly limited.
Further, the lower polishing mechanism 300 includes a lower polishing disk 310, a lower polishing pad 320 disposed on the upper end surface of the lower polishing disk 310, a lower platen 330 and a lower hydraulic system 340 disposed right below the lower polishing disk 310, and a hub 350 disposed to sequentially penetrate the lower platen 330 and the lower polishing disk 310 and protrude from the upper end surface of the lower polishing disk 310. Wherein, the lower pressing plate 330 is adjustably connected with the lower throwing plate 310; the outer diameter of the lower polishing pad 320 is matched with the inner diameter of the lower polishing disk 310; the lower polishing disc 310 moves in the same direction and at different speeds with the axis theory 350, the rotating speed of the axis theory 350 is greater than that of the lower polishing disc 310, the axis theory 350 is meshed with the inner ring disc 120 for placing the wafer, and the inner ring disc 120 with the wafer can rotate on the lower polishing disc 310 due to the fact that the axis theory 350 and the lower polishing disc 340 have a certain rotating speed ratio; the lower platen 330 has an inverted cone-shaped structure, as does the upper platen 230. The lower hydraulic system 340 is pressurized or depressurized to control the lower pressure plate 330 to drive the lower throwing disk 310 to deform towards the side far away from the upper throwing disk 210 or the side close to the upper throwing disk 210, so as to adjust the distance between the lower throwing disk 310 and the lower end face of the upper throwing disk 210.
Further, the lower hydraulic system 400 comprises a plurality of lower connecting rods 341 and two lower connecting rods 342 which are connected with the upper pressure plate 230 and the upper throwing plate 210, one side of each lower connecting rod 341 and one side of each lower connecting rod 342 which are close to the lower connecting rod 341 are respectively provided with a lower adjusting rod 343 and a lower adjusting rod 344 which are connected with the lower end faces of the lower connecting rods, and the lower adjusting rods 343 and the lower adjusting rods 344 are respectively communicated with the lower hydraulic cylinder 345; the lower hydraulic cylinder 345 is connected with an external air pump through a lower air inlet pipe 346, and an air outlet of the lower hydraulic cylinder 345 is connected with a lower air outlet pipe 347.
Specifically, the connection control mode of the lower pressing plate 330 and the lower throwing plate 310 is the same as that of the upper throwing plate 210 and the upper pressing plate 230, that is, the upper end surfaces of the lower connecting rod one 341 and the lower connecting rod two 342, which are arranged in the lower throwing plate 310, are also connected by a pneumatic bolt, the lower connecting rod one 341 is arranged near the middle part of the lower pressing plate 330, and the lower connecting rod two 342 is arranged near the outer edge of the lower pressing plate 330.
During pressurization control, the upper end surfaces of the lower adjusting rods 343 and the lower adjusting rods 344 are pressed to tighten the pneumatic threads, so that the lower polishing disk 310 is tightly connected with the lower pressing disk 330 even if the threads move downwards and are tightly connected with the lower connecting rods 341 and the lower connecting rods 342, the lower polishing disk 310 is pulled downwards, the distance between the outer edge and the middle area of the lower polishing disk 310 and the upper polishing disk 210 is increased, and the polishing effect of the upper polishing pad 220 and the lower polishing pad 320 on wafers is reduced. Accordingly, when the pressure relief retraction control is performed, the upper end surfaces of the lower adjustment rods 343 and the lower adjustment rods 344 are expanded to loosen the pneumatic screw threads, so that the screw threads move upward and are loosely coupled with the lower connecting rods 341 and the lower connecting rods 342, the lower polishing disk 310 is not tightly coupled with the lower pressure plate 330, and the lower polishing disk 210 is expanded upward, thereby reducing the distance between the outer edge and middle region of the lower polishing disk 310 and the upper polishing disk 210, and enhancing the wafer polishing effect of the upper polishing pad 220 and the lower polishing pad 320.
Further, by adjusting the pressure of the air pressure connected to the lower adjustment rods 343 and 344, the tightness of the connection between the lower connecting rods 341 and 342 can be adjusted, the tightness of the connection between the lower polishing plate 310 and the lower platen 330 can be adjusted, and the distance between the lower polishing plate 310 and the upper polishing plate 210 can be adjusted, so as to adjust the polishing strength of the lower polishing pad 320 and the upper polishing pad 220 on the wafer.
As shown in fig. 2, the measurement mechanism 400 includes: the measuring device comprises a first measuring piece 410 used for measuring the distance from one side of an inner diameter circle of the upper throwing disk 210 to the lower throwing disk 310, a second measuring piece 420 used for measuring the distance from the middle position between the inner diameter circle of the upper throwing disk 210 and an outer diameter circle thereof to the lower throwing disk 310, and a third measuring piece 430 used for measuring the distance from one side of the outer diameter circle of the upper throwing disk 210 to the lower throwing disk 310, wherein the first measuring piece 410, the second measuring piece 420 and the third measuring piece 430 are all arranged on the lower end face of the upper throwing disk 210 on the same side and are all position sensors.
Further, a first measuring part 410 is arranged on one side of the upper throwing disk 210 close to the inner diameter circle, a third measuring part 430 is arranged on one side of the upper throwing disk 210 close to the outer diameter circle, and a second measuring part 420 is arranged between the first measuring part 410 and the third measuring part 430, namely, between the inner diameter circle and the outer diameter circle of the upper throwing disk 210 and close to one side of the third measuring part 430; meanwhile, in order to ensure that the first measuring part 410, the second measuring part 420 and the third measuring part 430 are conveniently arranged and maintained, the lower end surfaces of the inner pipe, the middle pipe and the outer pipe, in which the first polishing liquid pipe 251, the second polishing liquid pipe 252 and the third polishing liquid pipe 253 are respectively arranged, are distributed in a top view as shown in fig. 3.
The position sensor for monitoring the deformation of the upper throwing disc is arranged on the lower end face of the pipeline provided with the polishing liquid pipe, so that the installation and maintenance are convenient, the use space of the lower throwing disc is optimized, and the structural space utilization rate of the upper throwing mechanism is maximized.
During the polishing process, the first measuring part 410, the second measuring part 420 and the third measuring part 430 detect the distances between the upper polishing disk 210 and the lower polishing disk 310 in real time, i.e., the inner distance, the middle distance and the outer distance, respectively, and transmit the measured data to the controller, and the controller calculates the lower end surface shape variable of the upper polishing mechanism 200, i.e., the deformation amount of the upper polishing disk 210, and the upper end surface shape variable of the lower polishing mechanism 300, i.e., the deformation amount of the lower polishing disk 310, according to the following formulas. The controller judges the deformation amount of the upper throwing disk 210 and the deformation amount of the lower throwing disk 310, and adjusts the outer edge part of the upper throwing disk 210 to be pressed to deform or pulled to deform upwards by controlling the upper throwing hydraulic system 240 and the outer edge part of the lower throwing disk 310 to be pressed to deform or pulled to deform downwards by controlling the lower throwing hydraulic system 340, so as to adjust the distance between the upper throwing disk 210 and the lower throwing disk 310, and then adjust the deformation amount of the upper throwing disk 210 and the deformation amount of the lower throwing disk 310.
The polishing equipment provided by the invention has reasonable structural design, can completely control the deformation amount of the upper polishing disc 210 and the deformation amount of the lower polishing disc 310, further control the geometric parameters of the two sides of the wafer, particularly the total thickness change GBIR, the local flatness SFQR Max and the edge local flatness ESFQR of the wafer are in the qualified range, and after adjustment, a plurality of groups of wafers can be placed in each batch, and the double-side polishing can be completed in 2-3min in each batch; compared with the prior art, the time for adjusting the deformation amount of a single-sided polished wafer is increased by nearly 96 percent; the polishing device has the advantages of good polishing quality, high polishing efficiency, high automation degree and low production cost, and is particularly suitable for the production of large-size wafers in batches.
A semiconductor wafer polishing method using the polishing apparatus as described above, comprising the steps of:
firstly: the measuring mechanism 400 measures the inside distance, the middle distance and the outside distance between the lower end face of the upper polishing mechanism 200 and the upper end face of the lower polishing mechanism 300.
Specifically, the inner distance, the middle distance and the outer distance between the position of the upper throwing disk 210 and the lower throwing disk 310 are measured sequentially by the first measuring part 410, the second measuring part 420 and the third measuring part 430, and the test data are transmitted to the peripheral controller for collection in real time.
Secondly, the method comprises the following steps: the controller processes the inner side distance, the middle distance and the outer side distance according to a set formula to obtain the variable of the lower end surface shape of the upper throwing mechanism 200 and the variable of the upper end surface shape of the lower throwing mechanism 300, namely the deformation of the upper throwing disk 210 and the deformation of the lower throwing disk 310.
Further, the variable of the lower end surface of the upper throwing mechanism 200 is the difference between the inner distance and the outer distance, that is:
the upper parabolic deformation Gap is the inner distance-the outer distance.
The variable of the upper end surface shape of the lower throwing mechanism 300 is the difference between the middle distance and the internal and external correction distances; wherein the inner and outer correction distances are the sum of the product of the outer distance and the first correction coefficient and the product of the inner distance and the second correction coefficient, that is:
the lower-throw disk deformation SK is equal to the middle distance- (outer distance × first correction coefficient + inner distance × second correction coefficient).
Wherein the sum of the first correction coefficient and the second correction coefficient is 1, and the first correction coefficient is 0.60-0.90.
During the polishing process, the upper hydraulic system 240 in the upper polishing mechanism 200 and the lower hydraulic system 340 in the lower polishing mechanism are controlled to be pressed or retracted so as to adjust the lower end surface shape variable of the upper polishing mechanism 200 and the upper end surface shape variable of the lower polishing mechanism 300.
Specifically, when the controller monitors that the deformation amount Gap of the upper throwing disk 210 or the deformation amount SK of the lower throwing disk 310 are both smaller than a standard value, the controller controls the pressure of the upper hydraulic cylinder 245 to be reduced and the pressure of the lower hydraulic cylinder 345 to be increased, the connection between the first upper adjusting rod 243 and the second upper adjusting rod 244 is fluffy, so that the upper throwing disk 210 and the upper pressing disk 230 are connected loosely, and the upper throwing disk 210 is deformed downwards; meanwhile, the connection of the lower adjusting rod 343 and the lower adjusting rod 344 is strengthened and is in a tightened state, so that the connection of the lower throwing disk 310 and the lower pressing disk 330 is strengthened, the lower throwing disk 210 is deformed downwards, the distance between the upper throwing disk 210 and the lower throwing disk 310 is increased, the deformation quantity Gap of the upper throwing disk 210 or the deformation quantity SK of the lower throwing disk 310 is adjusted to reach a standard range, and the flatness of the surface of the wafer is ensured to be in a qualified range.
When the controller monitors that the deformation amount Gap of the upper throwing disk 210 or the deformation amount SK of the lower throwing disk 310 is larger than a standard value, the controller controls the pressure of the upper hydraulic cylinder 245 to be increased and the pressure of the lower hydraulic cylinder 345 to be reduced, the connection between the first upper adjusting rod 243 and the second upper adjusting rod 244 is tightened, the connection between the upper throwing disk 210 and the upper pressing disk 230 is strengthened, and the upper throwing disk 210 is deformed upwards; meanwhile, the connection between the lower adjusting rod 343 and the lower adjusting rod 344 is weakened and is in a loose state, so that the lower throwing disk 310 and the lower pressing disk 330 are connected loosely, the lower throwing disk 210 is deformed upwards, the distance between the upper throwing disk 210 and the lower throwing disk 310 is reduced, the deformation quantity Gap of the upper throwing disk 210 or the deformation quantity SK of the lower throwing disk 310 is adjusted to be within a standard range, and the flatness of the surface of the wafer is ensured to be within a qualified range.
In this way, the geometric parameters of the 12 "wafer were detected as compared to those obtained in the prior art, as shown in table 1 below:
TABLE 1 Life data for silicon wafers at each site in a 300 diameter single crystal silicon rod
Figure BDA0002625428420000121
From the above, the geometric parameters of the wafer obtained by the polishing method of the embodiment are superior to the polishing quality of the prior art, and the state adjustment time of the shape deformation is reduced from 60min to 2min of the double surfaces of the single wafer, which is improved by about 96%. Therefore, the shape of the wafer is changed by the different shape states of the upper polishing disk 210 and the lower polishing disk 310 mainly based on the change of the internal and external friction strength of the wafer in the diameter direction, and the optimal shape of the wafer can be obtained by adjusting the value of the upper polishing disk deformation quantity Gap and the value of the lower polishing disk deformation quantity SK in the manufacturing and processing process of the wafer, so that the purpose of high-precision processing is achieved.
The semiconductor wafer polishing equipment and the polishing method are particularly suitable for double-side polishing of large-size wafers, the distance between the upper polishing mechanism and the lower polishing mechanism is adjusted to adjust the surface shape variable at the lower end of the upper polishing mechanism and the surface shape variable at the upper end of the lower polishing mechanism, so that the geometric parameters of the wafers are accurately ensured, the polishing time can be saved, the polishing time for adjusting the shape variable of the single wafer is improved by about 96%, the polishing efficiency is high, the control precision is high, the polishing quality of the wafers is ensured, the quality of the wafers is improved, and the production cost is reduced.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.

Claims (10)

1. A semiconductor wafer polishing apparatus, comprising:
a placing mechanism for placing a plurality of wafers;
the upper polishing mechanism and the lower polishing mechanism are used for polishing the two sides of the wafer and rotate independently;
the measuring mechanism is used for measuring the distance from different positions of the lower end surface of the upper throwing mechanism to the corresponding position of the lower end surface of the lower throwing mechanism;
the placing mechanism is arranged in the upper end face of the lower throwing mechanism and is driven by the lower throwing mechanism to rotate;
the upper throwing mechanism and the lower throwing mechanism can adjust the distance between the upper throwing mechanism and the lower throwing mechanism so as to adjust the variable of the lower end surface shape of the upper throwing mechanism and the variable of the upper end surface shape of the lower throwing mechanism.
2. A semiconductor wafer polishing apparatus as set forth in claim 1 wherein the placement mechanism comprises an outer ring disk provided with an inner gear and a plurality of inner ring disks provided with outer gears;
the inner ring disc is arranged on the inner side of the outer ring disc and meshed with the outer ring disc;
the inner ring discs are meshed with each other;
preferably, the inner ring discs are all meshed with a shaft center wheel arranged at the center of the upper end face of the lower throwing mechanism.
3. The semiconductor wafer polishing apparatus as set forth in claim 1 or 2 wherein the upper polishing mechanism comprises an upper polishing disk and an upper platen and an upper hydraulic system disposed directly above the upper polishing disk, wherein,
and the upper hydraulic system is pressurized or decompressed to control the upper pressure plate to drive the upper throwing plate to deform towards one side far away from the lower throwing mechanism or to deform towards one side close to the lower throwing mechanism so as to adjust the distance between the upper throwing plate and the upper end surface of the lower throwing mechanism.
4. A semiconductor wafer polishing apparatus as set forth in claim 3 wherein the down-polishing mechanism includes a down-polishing disk and a lower platen and a lower hydraulic system disposed directly below the down-polishing disk, wherein,
and the lower hydraulic system pressurizes or decompresses to control the lower pressing disc to drive the lower throwing disc to deform towards the side far away from or close to the upper throwing disc so as to adjust the distance between the lower throwing disc and the lower end face of the upper throwing mechanism.
5. A semiconductor wafer polishing apparatus as set forth in claim 4 wherein the measurement mechanism comprises:
the first measuring part is used for measuring the distance from one side of the inner diameter circle of the upper throwing disc to the lower throwing disc;
the second measuring part is used for measuring the distance from the middle position between the inner diameter circle and the outer diameter circle of the upper throwing disc to the lower throwing disc;
and the third measurement is used for measuring the distance from one side of the outer diameter circle of the upper throwing disc to the lower throwing disc;
the first measuring part, the second measuring part and the third measuring part are arranged on the same side.
6. A semiconductor wafer polishing apparatus as set forth in claim 5 wherein the first measuring member is disposed on a side of the upper polishing plate near the inner diameter;
the third measuring piece is arranged on one side, close to the outer diameter, of the upper throwing disc;
the second measuring part is arranged between the first measuring part and the third measuring part and is close to one side of the third measuring part.
7. A semiconductor wafer polishing method characterized by using the polishing apparatus according to any one of claims 1 to 6, the steps comprising:
collecting the inner side distance, the middle distance and the outer side distance between the lower end face of the upper throwing mechanism and the upper end face of the lower throwing mechanism;
processing the inner side distance, the middle distance and the outer side distance according to a set formula to obtain a lower end surface shape variable of the upper throwing mechanism and an upper end surface shape variable of the lower throwing mechanism;
and adjusting the variable of the lower end surface of the upper throwing mechanism and the variable of the upper end surface of the lower throwing mechanism within a standard range by controlling the upper throwing mechanism and the lower throwing mechanism to be pressed or retracted.
8. A semiconductor wafer polishing method as set forth in claim 7 wherein the variable of the lower end surface of the upper polishing means is the difference between the inner distance and the outer distance.
9. A semiconductor wafer polishing method as set forth in claim 7 or 8 wherein the variable of the upper end surface of the lower polishing means is the difference between the middle distance and the inner and outer correction distances;
the inner and outer correction distances are the sum of the product of the outer distance and a first correction coefficient and the product of the inner distance and a second correction coefficient.
10. A semiconductor wafer polishing method as set forth in claim 9 wherein the sum of the first correction factor and the second correction factor is 1;
preferably, the first correction coefficient is 0.60 to 0.90.
CN202010795447.8A 2020-08-10 2020-08-10 Semiconductor wafer polishing equipment and polishing method Pending CN111823120A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010795447.8A CN111823120A (en) 2020-08-10 2020-08-10 Semiconductor wafer polishing equipment and polishing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010795447.8A CN111823120A (en) 2020-08-10 2020-08-10 Semiconductor wafer polishing equipment and polishing method

Publications (1)

Publication Number Publication Date
CN111823120A true CN111823120A (en) 2020-10-27

Family

ID=72919672

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010795447.8A Pending CN111823120A (en) 2020-08-10 2020-08-10 Semiconductor wafer polishing equipment and polishing method

Country Status (1)

Country Link
CN (1) CN111823120A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113001379A (en) * 2021-03-17 2021-06-22 天津中环领先材料技术有限公司 Large-size silicon wafer double-side polishing method
US20220258300A1 (en) * 2021-02-17 2022-08-18 Lapmaster Wolters Gmbh Double-side or one-side machine tool
CN115673909A (en) * 2023-01-03 2023-02-03 北京特思迪半导体设备有限公司 Plane control method and system in semiconductor substrate double-side polishing

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220258300A1 (en) * 2021-02-17 2022-08-18 Lapmaster Wolters Gmbh Double-side or one-side machine tool
CN114986391A (en) * 2021-02-17 2022-09-02 莱玛特·沃尔特斯有限公司 Double-sided or single-sided processing machine
CN113001379A (en) * 2021-03-17 2021-06-22 天津中环领先材料技术有限公司 Large-size silicon wafer double-side polishing method
CN115673909A (en) * 2023-01-03 2023-02-03 北京特思迪半导体设备有限公司 Plane control method and system in semiconductor substrate double-side polishing
CN115673909B (en) * 2023-01-03 2023-03-10 北京特思迪半导体设备有限公司 Plane control method and system in semiconductor substrate double-side polishing

Similar Documents

Publication Publication Date Title
CN111823120A (en) Semiconductor wafer polishing equipment and polishing method
CN212947223U (en) Upper polishing mechanism for polishing wafer
CN102225598A (en) Solar silicon wafer wire cutting guide roller and manufacturing method and special film coating machine and electroplating machine
CN103158054B (en) Two kinds of single-sided polishing methods realized on two-sided lapping and buffing machine
CN212497149U (en) Semiconductor wafer polishing equipment
JP3935757B2 (en) Wafer double-side polishing apparatus and double-side polishing method
CN112658924A (en) Diamond flake crystal polishing equipment
WO2020077670A1 (en) Device and method for on-line measurement of wafer thinning and grinding force
CN208543356U (en) A kind of large dimond single wafer surface chemical mechanical polishing apparatus
Lai et al. Study on the wear characteristics of a lapping wheel in double-sided lapping based on the trajectory distribution
CN212553303U (en) Polishing device for changing warping degree of SiC wafer
CN112222989A (en) Adjustable grinding device based on monocrystalline silicon piece and grinding processing method for monocrystalline silicon piece
CN102398213B (en) Counter pressure double-sided polishing machine
CN206998590U (en) A kind of High Precision Crystal Oscillator slice lapping device
CA2806138C (en) A spindle apparatus for chemical mechanical polishing
CN217750973U (en) Sapphire wafer single face grinds processing structure
CN201711850U (en) Large-diameter silicon wafer polishing device
CN204076016U (en) Grinding mat trimmer and lapping device
CN206998594U (en) A kind of chip Magnetic Control lapping device
CN115741453A (en) Intelligent double-sided grinding machine with multi-sensor fusion
JP4636485B2 (en) Lapping machine
CN103358224A (en) Grinding machine of thrust bearing runner of hydro-generator
CN212947224U (en) Placing mechanism for placing wafer in double-side polishing
CN210307016U (en) Magnetic particle grinding device for efficiently polishing inner surface of pipe
CN207309684U (en) A kind of chip intelligent control lapping device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination