CN111809243B - Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material - Google Patents
Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material Download PDFInfo
- Publication number
- CN111809243B CN111809243B CN202010932731.5A CN202010932731A CN111809243B CN 111809243 B CN111809243 B CN 111809243B CN 202010932731 A CN202010932731 A CN 202010932731A CN 111809243 B CN111809243 B CN 111809243B
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- Prior art keywords
- crucible
- cadmium
- cover
- telluride
- simple substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 38
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 239000000463 material Substances 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims description 14
- 239000000126 substance Substances 0.000 claims abstract description 73
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 56
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 56
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 46
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 46
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000007788 liquid Substances 0.000 claims abstract description 41
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 39
- 239000011701 zinc Substances 0.000 claims abstract description 29
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 25
- 238000002360 preparation method Methods 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 7
- 230000002093 peripheral effect Effects 0.000 claims abstract description 7
- 238000005303 weighing Methods 0.000 claims abstract description 6
- 238000007789 sealing Methods 0.000 claims description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 239000000565 sealant Substances 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 238000011049 filling Methods 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 14
- 239000003795 chemical substances by application Substances 0.000 claims description 13
- 239000011261 inert gas Substances 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 7
- 239000007770 graphite material Substances 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract 1
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 238000007599 discharging Methods 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010932731.5A CN111809243B (en) | 2020-09-08 | 2020-09-08 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
Applications Claiming Priority (1)
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---|---|---|---|
CN202010932731.5A CN111809243B (en) | 2020-09-08 | 2020-09-08 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
Publications (2)
Publication Number | Publication Date |
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CN111809243A CN111809243A (en) | 2020-10-23 |
CN111809243B true CN111809243B (en) | 2020-12-15 |
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Family Applications (1)
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CN202010932731.5A Active CN111809243B (en) | 2020-09-08 | 2020-09-08 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116555912B (en) * | 2023-05-29 | 2023-10-31 | 武汉拓材科技有限公司 | Preparation device of cadmium telluride polycrystal material |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2585276B2 (en) * | 1987-07-14 | 1997-02-26 | 住友電気工業株式会社 | CdTe crystal manufacturing equipment |
JPS6445799A (en) * | 1987-08-11 | 1989-02-20 | Sumitomo Electric Industries | Production of cadmium telluride based crystal |
CN101210346B (en) * | 2006-12-30 | 2011-07-13 | 袁诗鑫 | Horizontal zone melting method for growing tellurium zinc cadmium single-crystal |
CN103420345B (en) * | 2012-05-22 | 2015-04-22 | 广东先导稀材股份有限公司 | Graphite crucible, heating furnace and preparation method for cadmium telluride |
CN204224740U (en) * | 2014-10-16 | 2015-03-25 | 中国科学院上海技术物理研究所 | A kind of synthesizer utilizing thermograde to synthesize tellurium zinc cadmium polycrystalline |
CN104357902A (en) * | 2014-10-16 | 2015-02-18 | 中国科学院上海技术物理研究所 | Synthesizing device and method for synthesizing Cd(1-x)ZnxTe polycrystal by utilizing temperature gradient |
CN106400101A (en) * | 2016-10-11 | 2017-02-15 | 广东先导先进材料股份有限公司 | Compound semiconductor monocrystal growing device and method |
CN107904662B (en) * | 2017-11-17 | 2020-06-09 | 中国工程物理研究院材料研究所 | Device and method for improving synthesis stability of tellurium-zinc-cadmium polycrystal |
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2020
- 2020-09-08 CN CN202010932731.5A patent/CN111809243B/en active Active
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220923 Address after: Room 101-3, No. 10, Intelligent Digital Industrial Park, Changzhou Science and Education City, No. 18-67, Changwu Middle Road, Wujin District, Changzhou City, Jiangsu Province 213000 Patentee after: Zhongke Hongxin (Changzhou) Sensing Technology Co.,Ltd. Address before: No.399, Chendian Road, Jiulong Avenue, Tiangu Industrial Zone, Jiulonghu Town, Zhenhai District, Ningbo City, Zhejiang Province Patentee before: Ningbo tellurite Photoelectric Technology Co.,Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A method for preparing cadmium telluride or cadmium zinc telluride polycrystalline materials Granted publication date: 20201215 Pledgee: Bank of Nanjing Co.,Ltd. Changzhou Branch Pledgor: Zhongke Hongxin (Changzhou) Sensing Technology Co.,Ltd. Registration number: Y2024980020398 |