CN104357902A - Synthesizing device and method for synthesizing Cd(1-x)ZnxTe polycrystal by utilizing temperature gradient - Google Patents
Synthesizing device and method for synthesizing Cd(1-x)ZnxTe polycrystal by utilizing temperature gradient Download PDFInfo
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- CN104357902A CN104357902A CN201410546425.2A CN201410546425A CN104357902A CN 104357902 A CN104357902 A CN 104357902A CN 201410546425 A CN201410546425 A CN 201410546425A CN 104357902 A CN104357902 A CN 104357902A
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Abstract
The invention discloses a synthesizing device and a method for synthesizing Cd(1-x)ZnxTe polycrystal by utilizing temperature gradient. The synthesizing device comprises an aluminum oxide heating furnace chamber, a lining furnace chamber, a temperature control system and a reaction vessel and can perform two-stage independent or united temperature increasing and decreasing. According to the method, the temperature gradient is regulated by changing temperature field distribution of a high-temperature area and a low temperature area, and the synthetic reaction speed is controlled by changing a crystal distribution mode; and stoichiometric ratio offset caused by crystal loss after synthesis is reduced by changing the temperature of the high-temperature area and the low temperature area. The synthesizing device and the method have the benefits as follows: (1), the reaction process is performed at uniform speed and is controllable in combination of a temperature gradient method and crystal distribution, and the tube cracking risk caused by violent reaction is eliminated; (2), almost no crystal loss is caused when a synthesized ingot performs Cd(1-x)ZnxTe single crystal growth in a secondary replaceable tube, and stoichiometric ratio offset is prevented; and (3), Cd(1-x)ZnxTe polycrystal ingots with various specifications of 2 inch, 3 inch and 4 inch can be directly synthesized.
Description
Technical field
The present invention is specifically related to a kind of reaction unit and the method that utilize thermograde synthesis tellurium zinc cadmium polycrystalline, and object realizes extensive tellurium zinc cadmium polycrystal low risk without the synthesis of stoichiometry ratio deviation, belongs to semiconductor materials and devices technical field.
Background technology
Tellurium zinc cadmium (Cd
1-xzn
xte) crystalline material is a kind of desirable infrared focal plane detector substrate material and superior material of infrared window.Moreover, Cd
1-xzn
xte crystal also has broad application prospects in preparation x and gamma detector, solar cell, photomodulator etc.Current, large face battle array infrared focal plane device needs larger sized Te-Zn-Cd monocrystal substrate, and in CdZnTe single crystal preparation technique, successful synthesizing large diameter polycrystal is then the key precondition obtaining large size Te-Zn-Cd monocrystal substrate.
The quartz crucible container explosion problem often running into chemical reaction and acutely produce is combined in tellurium zinc cadmium process in the large-scale industry of present stage, cause material oxidation to be scrapped and equipment damage and cause very large financial loss.Generally CdZnTe is directly synthesized under liquid-phase condition by each element.But due in building-up process, violent reaction can occur Te and Cd, release a large amount of heats and cause cadmium voltage rise in silica tube high, eventually exceed the withstand voltage scope of silica tube and split pipe leakage.Meanwhile, along with the increase of quartzy caliber, the decline of quartz crucible voltage endurance capability, and brilliant material increases rear reaction and releases more heat, is more prone to cause synthesis to be split and runs affairs former.Meanwhile, the deposition of brilliant material on quartzy tube wall causes tellurium zinc cadmium polycrystal nonstoichiometry ratio, also can cause dislocation in the crystal growth in later stage, the defects etc. such as precipitation.
Current most tellurium zinc cadmium synthetic technology is all mainly with reference to the synthetic technology of cadmium telluride, and not only single tube output is lower, and splitting pipe and brilliant material loss problem when fundamentally not solving synthesis.Patent of invention CN102086031 A proposes a liquid-phase synthesis method of cadmium telluride, and in this patent, the polycrystal single tube of each synthesis mostly is 700g most, is difficult to the demand meeting growth major diameter cadmium telluride.Patent of invention CN 103420346 A proposes a kind of preparation method of cadmium telluride, in this patent, cadmium telluride is synthesized at twice, often criticize synthesis and all separately will load twice graphite boat and twice silica tube, and need to pass into rare gas element and reducing gas in building-up process, technological process is more loaded down with trivial details, and the cycle is longer.Need in addition to carry out meticulous fragmentation and screening after single sintering, more easily introduce secondary pollution and the loss of brilliant material.Patent of invention CN 103409800 A proposes a kind of major diameter cadmium telluride or tellurium zinc cadmium polycrystalline bar synthesizer and preparation method, the method adopts the built-in plumbago crucible installing stopper additional of silica tube to synthesize, but the method fundamentally can not control the speed of reaction in tellurium zinc cadmium or cadmium telluride building-up process, in building-up process, still there is the crystalline substance material loss problem of reaction too acutely and after synthesis simultaneously.
Summary of the invention
Based on the associated problem existed in current cadmium telluride or tellurium zinc cadmium synthetic technology, the present invention proposes a kind of thermograde that adopts and synthesize the multicrystal apparatus and method of tellurium zinc cadmium.
An object of the present invention is to provide a kind of synthesis device for industrial extensive synthesis tellurium zinc cadmium.
Another object of the present invention is to provide and utilizes aforesaid device to synthesize tellurium zinc cadmium multicrystal method, and the method can make reaction process at the uniform velocity controlled, reduce cause because reacting violent split manage-style danger.Ensureing that the ingot synthesized almost does not have brilliant material loss when secondary replace tubes carries out Te-Zn-Cd monocrystal growth simultaneously, guaranteeing that chemical equilibrium metering is than not offseting.
For this reason, the invention provides following technical scheme:
Utilize thermograde to synthesize a reaction unit for tellurium zinc cadmium polycrystalline, consist of aluminum oxide burner hearth 7, quartz lining pipe 10, rear temperature-controlling thermal couple 6, rear temperature-controlling thermal couple 9, quartz crucible 8.It is characterized in that it being the body of heater shell 4 made by stainless steel outside whole body of heater, with the isolated insulation of furnace insulation cotton 2 between shell 4 and aluminum oxide burner hearth 7, whole furnace insulation cotton 2 is divided into two portions independently temperature control district by middle heat insulation 3, the length ratio of high temperature section and low-temperature zone is: 1:1 ~ 1:2, and it is controlled the temperature of body of heater respectively by front temperature-controlling thermal couple 9 and rear temperature-controlling thermal couple 6.Quartz lining pipe 10 in 7, is placed in quartz lining pipe 10 before and after quartz crucible 8 burner hearth and is blocked with fire door insulation block 1 and furnace bottom insulation block 5 respectively in aluminum oxide burner hearth.
The described thermograde that utilizes synthesizes the multicrystal reaction unit of tellurium zinc cadmium, it is characterized in that adopting quartz lining pipe 10.
The described thermograde that utilizes synthesizes the reaction unit of tellurium zinc cadmium polycrystalline, and it is characterized in that insulating cotton 2, is aluminosilicate property ceramic fiber loose wool.
The described thermograde that utilizes synthesizes the reaction unit of tellurium zinc cadmium polycrystalline, it is characterized in that by middle heat insulation 3 be mullite light heat-insulation brick.
The described thermograde that utilizes synthesizes the reaction unit of tellurium zinc cadmium polycrystalline, and it is characterized in that fire door insulation block 1, furnace bottom insulation block 5, material is sal Celafibre blanket.
Described reaction unit utilizes thermograde to synthesize the method for tellurium zinc cadmium polycrystalline, and it is characterized in that, described method is following steps:
(1) at a suitable temperature, the even firmly carbon film of last layer is coated with in the silica tube inside of cleaning by acetone cracking.
(2) in hundred-grade super-clean, tellurium is got, zinc, cadmium, according to Cd
1-xzn
xthe requirement of Zn component in Te, weigh the Te of 7N, Zn, Cd put into silica tube successively according to certain arrangement method, ensure that mouth of pipe place and pipe bottom are all Te blocks.Arrangement method is as follows:
1. silica tube utter misery length is L, Te block mean diameter is D
1, Cd rod mean length is D
2, Zn in the ordinary course of things, component relatively less (coming in Cd layer).
2. L=N (D
1+ D
2)+D
1, N ≈ 3 ~ 8, N is the arrangement number of plies of (Te+Cd).
(3) charged silica tube is put into except steam stove, opens vacuum pump evacuation, works as vacuum tightness
Reach 1 × 10
-5pa ~ 5 × 10
-5start during Pa to heat up except steam stove, degasification furnace temperature scope is at 200 ~ 300 DEG C.When vacuum tightness reaches 1 × 10
-6pa ~ 5 × 10
-6during Pa, by silica tube involution.Stop successively again vacuumizing and remove steam stove cooling (rate of temperature fall is 5 DEG C/h).
(4) silica tube is put into synthetic furnace, starts to heat up and temperature reduction technology:
1. high-temperature zone is raised to 460 ~ 520 DEG C with the speed of 1 ~ 8 DEG C/min, and cold zone is raised to 320 DEG C ~ 400 DEG C with the speed of 1 ~ 6 DEG C/min, and constant temperature 1 ~ 3 hour makes the temperature gap of high-temperature zone and cold zone between 60 ~ 200 DEG C.
2. incite somebody to action height temperature-raising region temperature raising with the speed of 1 ~ 6 DEG C/min, the temperature range of high-temperature zone and cold zone is respectively 1100 ~ 1140 DEG C, 1100 ~ 1140 DEG C, and homogenizing constant temperature time is 10 ~ 20 hours.
3. with the speed of 1 ~ 3 DEG C/min by high-temperature zone, the temperature of cold zone is down in the scope of 1000 DEG C ~ 1100 DEG C together.
4. with the speed of 1 ~ 6 DEG C/min by high-temperature zone, the temperature of cold zone is down in the scope of 10 DEG C ~ 100 DEG C together.
(5) open burner hearth, take out silica tube, open silica tube, in clean room, take out tellurium zinc cadmium polycrystalline product.
The present invention has following advantage:
(1) temperature gradient method combines the distribution of brilliant material and makes reaction process at the uniform velocity controlled, reduce cause because reacting violent split manage-style danger.(2) ingot synthesized almost does not have brilliant material loss when secondary replace tubes carries out Te-Zn-Cd monocrystal growth, ensure that chemical equilibrium metering is than not offseting.(3) directly can synthesize specification is 2 inches, and the tellurium zinc cadmium polycrystalline ingot of 3 inches and 4 inches, is widely used in the high quality continuous synthesis of each specification tellurium zinc cadmium polycrystalline ingot.
Accompanying drawing explanation
Fig. 1 is the structural representation of apparatus of the present invention: (1) fire door insulation block; (2) furnace insulation is cotton; (3) heat insulation in the middle of; (4) stainless steel body of heater shell; (5) furnace bottom insulation block; (6) temperature-controlling thermal couple afterwards; (7) aluminum oxide burner hearth; (8) quartz crucible; (9) front temperature-controlling thermal couple; (10) quartz lining pipe.
Fig. 2 is the process flow sheet of temperature gradient method of the present invention.
Fig. 3 is method synthesis Cd described in this patent
0.96zn
0.04the crystalline substance material deposition conditions of the synthesis example of Te: figure a. ordinary method, figure b. specific embodiment 1, figure c. specific embodiment 2, figure d. specific embodiment 3.
Embodiment
Below by specific examples, the present invention is further elaborated, but preferred embodiment provided by the invention, only be used for illustrating the present invention, and scope of the present invention is not imposed any restrictions, the modifications and variations that any person skilled in the art person can realize easily include in the scope of the present invention and claims.
As shown in Figure 1, synthesizer of the present invention comprises: one utilizes temperature gradient method to synthesize the reaction unit of tellurium zinc cadmium (Cd1-xZnxTe) polycrystalline, and it is characterized in that, described device comprises aluminum oxide burner hearth, liner hearth, temperature controlling system, reaction vessels.It is the body of heater shell 4 made by stainless steel outside whole body of heater, with the isolated insulation of furnace insulation cotton 2 between shell 4 and aluminum oxide burner hearth 7, whole furnace insulation cotton 2 is divided into two portions independently temperature control district by middle heat insulation 3, the length ratio of high temperature section and low-temperature zone is: 1:1 ~ 1:2, and it is controlled the temperature of body of heater respectively by front temperature-controlling thermal couple 9 and rear temperature-controlling thermal couple 6.Quartz protection internal lining pipe 10 in 7, is placed before and after quartz crucible 8 burner hearth in quartz protection internal lining pipe 10 and is blocked with fire door insulation block 1 and furnace bottom insulation block 5 respectively in aluminum oxide burner hearth.
In conjunction with the synthesizer that this patent method provides, to synthesize the Cd of 60mm diameter
0.96zn
0.04te polycrystalline rod is the method that example describes thermograde synthesis tellurium zinc cadmium polycrystalline in detail.According to described step, enumerating following specific embodiment is reference.
Specific embodiment 1
1) the even firmly carbon film of last layer is coated with in the silica tube inside of cleaning by acetone cracking.
2) in hundred-grade super-clean, according to the ingot diameter that will synthesize and length, according to Cd
0.96zn
0.04the requirement of Zn component in Te, the tellurium required for calculating, zinc, cadmium high pure raw material, then weigh respectively with electronic balance.Then by the Te of 7N, Zn, Cd put into silica tube successively according to certain arrangement method, ensure that mouth of pipe place and pipe bottom are all Te blocks.According to arrangement method, obtain N ≈ 6, namely batching is divided into 6 layers.
3) silica tube preparing material is put into except steam stove, open vacuum pump evacuation, when vacuum tightness reaches 1 × 10
-5start during Pa to heat except steam stove, degasification furnace temperature is at 200 DEG C.When vacuum tightness reaches 1 × 10
-6during Pa, by silica tube involution.Stop successively again vacuumizing and remove steam stove cooling (rate of temperature fall is 5 DEG C/h).
4) silica tube is put into synthetic furnace, starts to heat up and temperature reduction technology:
1. high-temperature zone is raised to 460 ~ 520 DEG C with the speed of 1.5 DEG C/min, and cold zone is raised to 320 DEG C ~ 400 DEG C with the speed of 1 DEG C/mm, constant temperature 1 hour, makes the temperature gap of high-temperature zone and cold zone be between 60 ~ 200 DEG C.
2. incite somebody to action height temperature-raising region temperature raising with the speed of 1 DEG C/min again, the temperature of high-temperature zone and cold zone is respectively 1100 ~ 1120 DEG C, and in the scope of 1100 ~ 1120 DEG C, homogenizing constant temperature time is 10 hours.
3. with the speed of 1 DEG C/min by high-temperature zone, the temperature of cold zone is down in the scope of 1000 DEG C ~ 1100 DEG C together.
4. with the speed of 1.5 DEG C/min by high-temperature zone, the temperature of cold zone is down in the scope of 20 DEG C ~ 50 DEG C together.
5) open burner hearth, take out silica tube, open silica tube, in clean room, take out tellurium zinc cadmium polycrystalline product, obtain the Cd of 60mm diameter
0.96zn
0.04te polycrystalline rod material.
Specific embodiment 2
1) the even firmly carbon film of last layer is coated with in the silica tube inside of cleaning by acetone cracking.
2) in hundred-grade super-clean, according to the ingot diameter that will synthesize and length, according to Cd
0.96zn
0.04the requirement of Zn component in Te, the tellurium required for calculating, zinc, cadmium high pure raw material, then weigh respectively with electronic balance.Then by the Te of 7N, Zn, Cd put into silica tube successively according to certain arrangement method, ensure that mouth of pipe place and pipe bottom are all Te blocks.According to arrangement method, obtain N ≈ 5, namely batching is divided into 5 layers.
3) silica tube preparing material is put into except steam stove, open vacuum pump evacuation, when vacuum tightness reaches 3 × 10
-5start during Pa to heat except steam stove, degasification furnace temperature scope is at 250 DEG C.When vacuum tightness reaches 3 × 10
-6during Pa, by silica tube involution.Stop successively again vacuumizing and remove steam stove cooling (rate of temperature fall is 5 DEG C/h).
4) silica tube is put into synthetic furnace, starts to heat up and temperature reduction technology:
1. high-temperature zone is raised to 460 ~ 520 DEG C with the speed of 2 DEG C/min, and cold zone is raised to 320 DEG C ~ 400 DEG C with the speed of 1.5 DEG C/mm, and constant temperature 2 hours makes the temperature gap of high-temperature zone and cold zone between 60 ~ 200 DEG C.
2. incite somebody to action height temperature-raising region temperature raising with the speed of 2 DEG C/min again, the temperature of high-temperature zone and cold zone is respectively 1120 ~ 1130 DEG C, and in the scope of 1120 ~ 1140 DEG C, homogenizing constant temperature time is 15 hours.
3. with the speed of 1.5 DEG C/min by high-temperature zone, the temperature of cold zone is down in the scope of 1000 DEG C ~ 1100 DEG C together.
4. with the speed of 2 DEG C/min by high-temperature zone, the temperature of cold zone is down in the scope of 50 DEG C ~ 80 DEG C together.
5) open burner hearth, take out silica tube, open silica tube, in clean room, take out tellurium zinc cadmium polycrystalline product, obtain the Cd of 60mm diameter
0.96zn
0.04te polycrystalline rod material.
Specific embodiment 3
1) the even firmly carbon film of last layer is coated with in the silica tube inside of cleaning by acetone cracking.
2) in hundred-grade super-clean, according to the ingot diameter that will synthesize and length, according to Cd
0.96zn
0.04the requirement of Zn component in Te, the tellurium required for calculating, zinc, cadmium high pure raw material, then weigh respectively with electronic balance.Then by the Te of 7N, Zn, Cd put into silica tube successively according to certain arrangement method, ensure that mouth of pipe place and pipe bottom are all Te blocks.According to arrangement method, obtain N ≈ 4, namely batching is divided into 4 layers.
3) silica tube preparing material is put into except steam stove, open vacuum pump evacuation, when vacuum tightness reaches 5 × 10
-5start during Pa to heat except steam stove, degasification furnace temperature scope is at 300 DEG C.When vacuum tightness reaches 5 × 10
-6during Pa, by silica tube involution.Stop successively again vacuumizing and remove steam stove cooling (rate of temperature fall is 5 DEG C/h).
4) silica tube is put into synthetic furnace, starts to heat up and temperature reduction technology:
1. high-temperature zone is raised to 460 ~ 520 DEG C with the speed of 3 DEG C/min, and cold zone is raised to 320 DEG C ~ 400 DEG C with the speed of 2 DEG C/mm, constant temperature 2 hours, between the temperature gap 60 ~ 200 DEG C making high-temperature zone and cold zone.
2. incite somebody to action height temperature-raising region temperature raising with the speed of 3 DEG C/min again, it is 1130 ~ 1140 DEG C that the temperature of high-temperature zone and cold zone is respectively, and in the scope of 1130 ~ 1140 DEG C, homogenizing constant temperature time is 20 hours.
3. with the speed of 2 DEG C/min by high-temperature zone, the temperature of cold zone is down in the scope of 1000 DEG C ~ 1100 DEG C together.
4. with the speed of 3 DEG C/min by high-temperature zone, the temperature of cold zone is down in the scope of 80 DEG C ~ 100 DEG C together.
5) open burner hearth, take out silica tube, open silica tube, in clean room, take out tellurium zinc cadmium polycrystalline product, obtain the Cd of 60mm diameter
0.96zn
0.04te polycrystalline rod material.
Embodiment in the present invention, only for the present invention will be described, does not form the restriction to right, other equivalent in fact substituting, all at scope that those skilled in that art can expect.
Claims (6)
1. utilize thermograde to synthesize a synthesizer for tellurium zinc cadmium polycrystalline, it comprises aluminum oxide burner hearth (7), quartz lining pipe (10), rear temperature-controlling thermal couple (6), rear temperature-controlling thermal couple (9), quartz crucible (8), is characterized in that:
It is the body of heater shell (4) made by stainless steel outside whole body of heater, with the isolated insulation of furnace insulation cotton (2) between shell (4) and aluminum oxide burner hearth (7), whole furnace insulation cotton (2) is divided into two portions independently temperature control district by middle heat insulation (3), the length ratio of high temperature section and low-temperature zone is: 1:1 ~ 1:2, and it is controlled the temperature of body of heater respectively by front temperature-controlling thermal couple (9) and rear temperature-controlling thermal couple (6).Quartz lining pipe (10) in (7), is placed in quartz lining pipe (10) before and after quartz crucible (8) burner hearth and is used fire door insulation block (1) and furnace bottom insulation block (5) to block respectively in aluminum oxide burner hearth.
2. utilize thermograde to synthesize the synthesizer of tellurium zinc cadmium polycrystalline as claimed in claim 1, it is characterized in that: described insulating cotton (2) is aluminosilicate property ceramic fiber loose wool.
3. utilize thermograde to synthesize the synthesizer of tellurium zinc cadmium polycrystalline as claimed in claim 1, it is characterized in that by middle heat insulation (3) be mullite light heat-insulation brick.
4. utilize thermograde to synthesize the synthesizer of tellurium zinc cadmium polycrystalline as claimed in claim 1, its feature exists: described fire door insulation block (1), and the material of furnace bottom insulation block (5) is sal Celafibre blanket.
5., based on the tellurium zinc cadmium polycrystal synthesis method utilizing thermograde to synthesize the synthesizer of tellurium zinc cadmium polycrystalline described in claim 1, it is characterized in that, described method comprises the steps:
1) the even firmly carbon film of last layer is coated with in the silica tube inside of cleaning by acetone cracking;
2) tellurium is got, zinc, cadmium, according to Cd
1-xzn
xthe requirement of Zn component in Te, weigh the Te of 7N, Zn, Cd put into silica tube successively according to certain arrangement method, and mouth of pipe place and pipe bottom are all Te blocks;
3) charged silica tube is put into except steam stove, open vacuum pump evacuation, when vacuum tightness reaches 1 × 10
-5pa ~ 5 × 10
-5start during Pa to heat up except steam stove, degasification furnace temperature scope is at 200 ~ 300 DEG C.When vacuum tightness reaches 1 × 10
-6pa ~ 5 × 10
-6during Pa, by silica tube involution.Stop successively vacuumizing and remove steam stove cooling, rate of temperature fall is 5 DEG C/h again;
4) silica tube is put into synthetic furnace, starts to heat up and temperature reduction technology:
1. high-temperature zone is raised to 460 ~ 520 DEG C with the speed of 1 ~ 8 DEG C/min, and cold zone is raised to 320 DEG C ~ 400 DEG C with the speed of 1 ~ 6 DEG C/min, and constant temperature 1 ~ 3 hour makes the temperature gap of high-temperature zone and cold zone between 60 ~ 200 DEG C;
2. incite somebody to action height temperature-raising region temperature raising with the speed of 1 ~ 6 DEG C/min, the temperature range of height warm area is respectively 1100 ~ 1140 DEG C, 1100 ~ 1140 DEG C, and homogenizing constant temperature time is 10 ~ 20 hours;
3. with the speed of 1 ~ 2 DEG C/min, the temperature of height warm area is down in the scope of 1000 DEG C ~ 1100 DEG C respectively;
4. with the speed of 1 ~ 4 DEG C/min, the temperature of height warm area is down in the scope of 10 DEG C ~ 100 DEG C respectively;
5) open burner hearth, take out silica tube, open silica tube, in clean room, take out tellurium zinc cadmium product.
6. a kind of tellurium zinc cadmium polycrystal synthesis method based on utilizing thermograde to synthesize the synthesizer of tellurium zinc cadmium polycrystalline described in claim 1 as claimed in claim 6, is characterized in that: in step 2) described in Te, the arrangement method of Zn, Cd is as follows:
1. silica tube utter misery length is L, Te block mean diameter is D
1, Cd rod mean length is D
2, Zn comes in Cd layer;
2. L=N (D
1+ D
2)+D
1, N ≈ 3 ~ 8, N is the arrangement number of plies of Te+Cd.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105401213A (en) * | 2015-12-03 | 2016-03-16 | 河南西格马晶体科技有限公司 | Method for preparing large flake-like sapphire single crystals by utilizing crucible rising pulling method |
| CN106380198A (en) * | 2016-09-20 | 2017-02-08 | 广东先导稀材股份有限公司 | Cadmium zinc telluride target material as well as preparation method and application thereof |
| CN106435738A (en) * | 2016-09-20 | 2017-02-22 | 广东先导稀材股份有限公司 | Preparation method of cadmium zinc telluride polycrystals |
| CN107904662A (en) * | 2017-11-17 | 2018-04-13 | 中国工程物理研究院材料研究所 | A kind of devices and methods therefor for improving cadmium-zinc-teiluride polycrystal synthesis stability |
| CN111809241A (en) * | 2020-09-08 | 2020-10-23 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
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| CN105401213A (en) * | 2015-12-03 | 2016-03-16 | 河南西格马晶体科技有限公司 | Method for preparing large flake-like sapphire single crystals by utilizing crucible rising pulling method |
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| CN106380198B (en) * | 2016-09-20 | 2019-01-29 | 广东先导稀贵金属材料有限公司 | Cadmium-zinc-teiluride target, preparation method and application |
| CN107904662A (en) * | 2017-11-17 | 2018-04-13 | 中国工程物理研究院材料研究所 | A kind of devices and methods therefor for improving cadmium-zinc-teiluride polycrystal synthesis stability |
| CN107904662B (en) * | 2017-11-17 | 2020-06-09 | 中国工程物理研究院材料研究所 | Device and method for improving synthesis stability of tellurium-zinc-cadmium polycrystal |
| CN111809235A (en) * | 2020-09-08 | 2020-10-23 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
| CN111809241A (en) * | 2020-09-08 | 2020-10-23 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
| CN111809243A (en) * | 2020-09-08 | 2020-10-23 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
| CN111809236A (en) * | 2020-09-08 | 2020-10-23 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
| CN111809235B (en) * | 2020-09-08 | 2020-12-22 | 宁波碲晶光电科技有限公司 | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material |
| CN115726031A (en) * | 2022-09-26 | 2023-03-03 | 湖南大合新材料有限公司 | Method and equipment for synthesizing tellurium-zinc-cadmium polycrystal |
| CN115726031B (en) * | 2022-09-26 | 2023-06-09 | 湖南大合新材料有限公司 | Method and equipment for synthesizing tellurium-zinc-cadmium polycrystal |
| CN117568914A (en) * | 2023-03-20 | 2024-02-20 | 苏州哥地光子技术有限公司 | Method for producing cadmium telluride and cadmium zinc telluride monocrystal |
| CN117568914B (en) * | 2023-03-20 | 2024-09-03 | 苏州哥地光子技术有限公司 | Method for producing cadmium telluride and cadmium zinc telluride monocrystal |
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