CN106380198B - Cadmium-zinc-teiluride target, preparation method and application - Google Patents
Cadmium-zinc-teiluride target, preparation method and application Download PDFInfo
- Publication number
- CN106380198B CN106380198B CN201610836897.0A CN201610836897A CN106380198B CN 106380198 B CN106380198 B CN 106380198B CN 201610836897 A CN201610836897 A CN 201610836897A CN 106380198 B CN106380198 B CN 106380198B
- Authority
- CN
- China
- Prior art keywords
- cadmium
- zinc
- target
- powder
- teiluride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/547—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on sulfides or selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/446—Sulfides, tellurides or selenides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610836897.0A CN106380198B (en) | 2016-09-20 | 2016-09-20 | Cadmium-zinc-teiluride target, preparation method and application |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610836897.0A CN106380198B (en) | 2016-09-20 | 2016-09-20 | Cadmium-zinc-teiluride target, preparation method and application |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106380198A CN106380198A (en) | 2017-02-08 |
CN106380198B true CN106380198B (en) | 2019-01-29 |
Family
ID=57936671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610836897.0A Active CN106380198B (en) | 2016-09-20 | 2016-09-20 | Cadmium-zinc-teiluride target, preparation method and application |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106380198B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108179387A (en) * | 2017-12-28 | 2018-06-19 | 清远先导材料有限公司 | A kind of preparation method of copper indium gallium selenide base system row target |
CN109704766A (en) * | 2019-01-21 | 2019-05-03 | 江西科泰新材料有限公司 | Zinc telluridse mixes the production technology of cuprous telluride target |
CN111647857A (en) * | 2020-05-27 | 2020-09-11 | 先导薄膜材料(广东)有限公司 | Method for recycling residual target of cadmium telluride thin film battery |
CN113121232A (en) * | 2021-04-23 | 2021-07-16 | 先导薄膜材料(广东)有限公司 | Preparation method of conductive zinc telluride target |
CN113233870B (en) * | 2021-04-25 | 2023-01-13 | 先导薄膜材料(广东)有限公司 | Cadmium oxide-doped target material and preparation method and application thereof |
CN113372117B (en) * | 2021-06-11 | 2023-03-10 | 先导薄膜材料有限公司 | Preparation method of zinc telluride copper-doped target material |
CN113336549B (en) * | 2021-06-15 | 2023-10-10 | 先导薄膜材料(广东)有限公司 | Tellurium-selenium-cadmium target material and preparation method thereof |
CN113526955A (en) * | 2021-07-30 | 2021-10-22 | 广东先导稀材股份有限公司 | Preparation method of cadmium zinc telluride target |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201780976U (en) * | 2010-07-29 | 2011-03-30 | 比亚迪股份有限公司 | CdTe (cadmium telluride) solar cell |
CN102492927A (en) * | 2011-12-08 | 2012-06-13 | 上海太阳能电池研究与发展中心 | Method for preparing tellurium-zinc-cadmium film material with adjustable forbidden bandwidth |
CN103911666A (en) * | 2013-01-08 | 2014-07-09 | 广东先导稀材股份有限公司 | Tellurium zinc cadmium polycrystal synthesis tool and tellurium zinc cadmium polycrystal synthesis method |
CN104357902A (en) * | 2014-10-16 | 2015-02-18 | 中国科学院上海技术物理研究所 | Synthesizing device and method for synthesizing Cd(1-x)ZnxTe polycrystal by utilizing temperature gradient |
CN104694889A (en) * | 2013-12-10 | 2015-06-10 | 北京有色金属研究总院 | Preparation method of CdTe sputtering target material |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090053453A1 (en) * | 2005-12-21 | 2009-02-26 | Durham Scientific Crystals Limited | Semiconductor device and method of manufacture thereof |
-
2016
- 2016-09-20 CN CN201610836897.0A patent/CN106380198B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201780976U (en) * | 2010-07-29 | 2011-03-30 | 比亚迪股份有限公司 | CdTe (cadmium telluride) solar cell |
CN102492927A (en) * | 2011-12-08 | 2012-06-13 | 上海太阳能电池研究与发展中心 | Method for preparing tellurium-zinc-cadmium film material with adjustable forbidden bandwidth |
CN103911666A (en) * | 2013-01-08 | 2014-07-09 | 广东先导稀材股份有限公司 | Tellurium zinc cadmium polycrystal synthesis tool and tellurium zinc cadmium polycrystal synthesis method |
CN104694889A (en) * | 2013-12-10 | 2015-06-10 | 北京有色金属研究总院 | Preparation method of CdTe sputtering target material |
CN104357902A (en) * | 2014-10-16 | 2015-02-18 | 中国科学院上海技术物理研究所 | Synthesizing device and method for synthesizing Cd(1-x)ZnxTe polycrystal by utilizing temperature gradient |
Also Published As
Publication number | Publication date |
---|---|
CN106380198A (en) | 2017-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106380198B (en) | Cadmium-zinc-teiluride target, preparation method and application | |
CN110698205B (en) | Preparation method of graphene-toughened silicon carbide ceramic | |
CN107620049B (en) | A kind of preparation method of soap-free emulsion polymeization phase pure WC target | |
CN109180187B (en) | Preparation method of highly oriented nanometer MAX phase ceramic and MAX phase in-situ authigenic oxide nanometer complex phase ceramic | |
CN110127633A (en) | A kind of cadmium telluride target and preparation method thereof | |
CN105562694A (en) | Hot isostatic pressing three-control method suitable for additive manufacturing parts | |
CN104894516A (en) | Method for efficiently preparing ternary laminar MAX phase ceramic coating layer at low temperature | |
CN110128143A (en) | A kind of cadmium selenide target and preparation method thereof | |
CN107603571B (en) | Preparation of shaped expanded graphite-based erythritol intermediate-temperature composite phase-change heat storage material | |
CN103264542A (en) | Titanium aluminum-ceramic layered material and preparation method thereof | |
CN107586987B (en) | Titanium carbide-titanium diboride two-phase enhancing Cu-base composites and preparation method thereof | |
CN102424918A (en) | Method for preparing MoCu gradient material by combining molybdenum powder grading and infiltration | |
CN102699325A (en) | Preparing method for Ti-Si alloy target materials | |
CN109824382A (en) | A kind of heat management SiC/ graphite film laminar composite and preparation method thereof | |
CN111393170A (en) | Method for preparing high-density silicon nitride ceramic through multi-factor optimization and prepared silicon nitride ceramic | |
CN106587940A (en) | High-purity compact magnesium oxide target material and preparation method thereof | |
CN106521631A (en) | Preparation method of polycrystal zinc sulfide | |
CN109234691A (en) | A kind of high thermal conductivity graphite film-metallic composite and preparation method thereof | |
CN102485378B (en) | Preparation method of ruthenium metal sputtering target material | |
CN110791693B (en) | High-entropy alloy with low Al content, high strength and toughness and acid corrosion resistance and preparation method thereof | |
CN107746280A (en) | A kind of high-compactness TiB2The preparation method of ceramic target | |
CN104003728B (en) | A kind of pressureless sintering prepares Ti2The method of SC ceramics | |
CN106278264A (en) | A kind of high density chromic lanthanum ceramics heater manufacture method | |
CN107445625B (en) | High-density ZrB2Method for producing ceramic | |
CN109503169A (en) | A kind of special graphite and preparation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Wen Chongbin Inventor after: Zhu Liu Inventor after: Hu Zhixiang Inventor after: Zeng Chengliang Inventor after: Yu Ming Inventor before: Wen Chongbin Inventor before: Zhu Liu Inventor before: Hu Zhixiang Inventor before: Zeng Chengliang Inventor before: Yu Ming Inventor before: Li Qinxiang |
|
CB03 | Change of inventor or designer information | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20181122 Address after: 511500 Tellurium Chemical Workshop of Guangdong Pioneer Rare Materials Co., Ltd., Heyun Town, Qingxin District, Qingyuan City, Guangdong Province Applicant after: Guangdong Pioneer Precious Metals Material Co., Ltd. Address before: 511500 Industrial Zone, wo Yun town, Qingxin County, Qingyuan, Guangdong (beside the fish dam road) Applicant before: Guangdong Vital Rare Material Co., Ltd. |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210610 Address after: 511500 area a, no.27-9 Baijia Industrial Park, high tech Zone, Qingyuan City, Guangdong Province Patentee after: Leading film materials (Guangdong) Co.,Ltd. Address before: 511500 Tellurium Chemical Workshop of Guangdong Pioneer Rare Materials Co., Ltd., Heyun Town, Qingxin District, Qingyuan City, Guangdong Province Patentee before: Guangdong Pioneer Precious Metals Material Co.,Ltd. |
|
TR01 | Transfer of patent right |