CN111780653B - Carbon film nano conductive material-based resistor and preparation method thereof - Google Patents
Carbon film nano conductive material-based resistor and preparation method thereof Download PDFInfo
- Publication number
- CN111780653B CN111780653B CN202010526219.0A CN202010526219A CN111780653B CN 111780653 B CN111780653 B CN 111780653B CN 202010526219 A CN202010526219 A CN 202010526219A CN 111780653 B CN111780653 B CN 111780653B
- Authority
- CN
- China
- Prior art keywords
- conductive material
- carbon film
- substrate
- nano conductive
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/30—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapers; for testing the alignment of axes
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
The invention discloses a resistor body based on a carbon film nano conductive material and a preparation method thereof, belongs to the technical field of sensor preparation, and aims to solve the problem that the existing conductive plastic potential type displacement sensor is poor in wear resistance and further poor in reliability. The resistor body based on the carbon film nano conductive material comprises substrate ceramic, a resistance film, a metal pad and a signal leading-out hole; the substrate ceramic is of a circular structure, a metal bonding pad with an opening is printed on the upper surface of the inner side of the substrate ceramic circular ring, a signal leading-out hole is formed in the substrate ceramic at the opening of the metal bonding pad, and a resistance film is prepared on the outer surface of the substrate ceramic; the resistance film is a carbon film nano conductive material prepared based on a carbon-constantan double-target co-sputtering method. The invention is used for preparing the resistor body.
Description
Technical Field
The invention relates to a resistor body based on a carbon film nano conductive material and a preparation method thereof, belonging to the technical field of sensor preparation.
Background
The sensor is regarded as one of three major pillars of modern information technology as the leading-edge technology of modern science and technology, and is also a high-technology industry with the most development prospect recognized at home and abroad. Displacement sensors have been playing an important role as one of the most widely used types in the sensor family. According to different motion modes, displacement sensors are divided into linear displacement sensors and angular displacement sensors, and according to different measurement principles, the displacement sensors can be divided into potential type, inductance type, capacitance type, differential transformer type, eddy current type and the like. The potential displacement sensor has simple measurement principle, can be designed in a miniaturized mode, has small volume and weight, and is widely applied to various fields of aerospace, ship power, metallurgical coal and the like.
The potential displacement sensor slides on the resistor body through a movable brush, mechanical displacement (straight line or rotation angle) is converted into voltage output in a linear function relationship with the mechanical displacement, and the production of the conductive plastic potential displacement sensor in the prior art utilizes a special process to coat DAP resistance slurry on an insulating base body, heat and polymerize the DAP resistance slurry into a resistance film, or thermoplastic-press DAP resistance powder into a solid body formed in a groove of the insulating base body to serve as the resistor body. The method has the characteristics of good output smoothness, low dynamic noise, wide resistance range and the like. However, when the sensor is in operation, the brush and the resistor are always in sliding contact and friction, and the long-term operation causes serious abrasion of the coated resistor film, which directly affects the service life of the sensor.
Disclosure of Invention
The invention aims to solve the problems of poor wear resistance and poor sensor reliability of the existing conductive plastic potential type displacement sensor, and provides a resistor body based on a carbon film nano conductive material and a preparation method thereof.
The invention relates to a resistor body based on a carbon film nano conductive material, which comprises substrate ceramics, a resistance film, a metal pad and a signal leading-out hole;
the substrate ceramic is of a circular structure, a metal bonding pad with an opening is printed on the upper surface of the inner side of the substrate ceramic circular ring, a signal leading-out hole is formed in the substrate ceramic at the opening of the metal bonding pad, and a resistance film is prepared on the outer surface of the substrate ceramic;
the resistance film is a carbon film nano conductive material prepared based on a carbon-constantan double-target co-sputtering method.
The invention relates to a preparation method of a resistor body based on a carbon film nano conductive material, which comprises the following steps:
s1, preparing the ceramic powder into a casting membrane by adopting a casting platform, and then cutting into substrate ceramic according to the set size by utilizing a cutting machine;
s2, manufacturing a through hole on the substrate ceramic prepared in the S1, and filling metal slurry in the through hole to form a signal leading-out hole;
s3, printing a metal pad by adopting a screen printing method, and then sintering to form a cooked porcelain substrate;
s4, putting the cooked ceramic substrate obtained in the S3 into a vacuum coating chamber, and preparing a resistance film of the carbon film nano conductive material by adopting a magnetron sputtering process;
and S5, forming the metal film in a stripping mode by adopting a reverse glue process method to prepare the resistor body.
Preferably, the method for forming the porcelain sintered substrate by sintering described in S3 includes:
and forming a green body after the metal bonding pad is printed by a screen, putting the green body into a glue discharging furnace, setting a glue discharging system according to the thickness of the green body and a thermogravimetric analysis curve, putting the green body after glue discharging into a sintering furnace, setting the temperature of the sintering furnace to be 1000 ℃, and sintering to form the cooked porcelain substrate.
Preferably, the method for preparing the carbon film nano conductive material resistance thin film by using the magnetron sputtering process of S4 includes:
preparing a conductive layer with the thickness of 0.2-2 mu m by adopting a magnetron sputtering process, and stripping the sol to form the resistance film.
Preferably, the ceramic powder of S1 is Al2O3 with the granularity of 0.5-1 μm.
The invention has the advantages that: the resistor body based on the carbon film nano conductive material provided by the invention adopts a film process technology, and the diamond-like carbon film is deposited on the alumina substrate ceramic in a carbon-constantan double-target co-sputtering mode. Therefore, the carbon film nano conductive material-based resistor body provided by the invention can enhance the wear resistance of the sensor resistance sensitive element and improve the reliability of the sensor. The sensor can comprehensively replace the sensitive element parts of the existing conductive plastic linear displacement sensor and the angular displacement sensor, so that the performance index of the sensor is comprehensively improved. In addition, the insulating material with the metalized surface has the characteristics of an insulator and metal, has excellent performances of solvent resistance, corrosion resistance, wear resistance, light resistance and the like, has the appearance and electromagnetic characteristics of the metal, and can be widely applied to the fields of printed circuit boards, microelectronic technology, decorative coatings, shielding technology, electrochemical protection and the like.
Drawings
FIG. 1 is a schematic structural diagram of a carbon film nano-conductive material-based resistor according to the present invention;
FIG. 2 is a schematic process flow diagram of the method for preparing the carbon film nano conductive material-based resistor body according to the present invention;
FIG. 3 is a schematic diagram of the preparation process of the twin-target co-sputtering method of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The first embodiment is as follows: the present embodiment will be described with reference to fig. 1, wherein the carbon film-based nano conductive material resistor of the present embodiment includes a substrate ceramic 1, a resistive thin film 2, a metal pad 3 and a signal lead-out hole 4;
the substrate ceramic 1 is of a circular structure, a metal pad 3 with an opening is printed on the upper surface of the inner side of the circular ring of the substrate ceramic 1, a signal leading-out hole 4 is arranged on the substrate ceramic 1 at the opening of the metal pad 3, and a resistance film 2 is prepared on the outer surface of the substrate ceramic 1;
the resistance film 2 is a carbon film nano conductive material prepared based on a carbon-constantan double-target co-sputtering method.
The second embodiment is as follows: the following describes an embodiment of the present invention with reference to fig. 1, 2 and 3, and the method for manufacturing a carbon film nano conductive material-based resistor body according to the present embodiment is used for manufacturing a carbon film nano conductive material-based resistor body, and the method includes:
s1, preparing the ceramic powder into a casting membrane by adopting a casting platform, and then cutting into the substrate ceramic 1 according to the set size by utilizing a cutting machine;
s2, forming a through hole on the substrate ceramic 1 prepared in the S1, and filling metal slurry in the through hole to form a signal leading-out hole 4;
s3, printing a metal pad 3 by adopting a screen printing method, and then sintering to form a cooked porcelain substrate;
s4, putting the cooked ceramic substrate obtained in the S3 into a vacuum coating chamber, and preparing a resistance film 2 made of a carbon film nano conductive material by adopting a magnetron sputtering process;
and S5, forming the metal film in a stripping mode by adopting a reverse glue process method to prepare the resistor body.
Further, the method for forming the porcelain base plate by sintering in S3 includes:
and forming a green body after the metal bonding pad 3 is printed by a screen, putting the green body into a glue discharging furnace, setting a glue discharging system according to the thickness of the green body and a thermogravimetric analysis curve, putting the green body after glue discharging into a sintering furnace, setting the temperature of the sintering furnace to be 1000 ℃, and sintering to form the cooked porcelain substrate.
Still further, the method for preparing the carbon film nano conductive material resistance thin film 2 by using the magnetron sputtering process in S4 includes:
the conductive layer with the thickness of 0.2-2 mu m is prepared by adopting a magnetron sputtering process, and the resistance film 2 is formed by stripping the sol.
Still further, the ceramic powder material of S1 adopts Al with the granularity of 0.5-1 μm2O3Ceramic powder.
In the present embodiment, if Al is selected2O3The large granularity of the ceramic powder can directly cause the substrate ceramic 1 made of the powder to have large microscopic hole defects, and the electronic motion is limited by the internal defects in the deposition process of the diamond-like carbon film, thereby influencing the temperature coefficient and the square resistance of the sensitive diamond-like carbon film.
The invention provides a resistor body based on a carbon film nano conductive material, which is used for a resistor sensitive element of a potentiometer type angular displacement sensor and can replace the existing conductive plastic resistor material, and because the resistor film 2 is a uniform and compact diamond-like carbon film doped with metal substances, the wear resistance, the reliability and the service life of the sensor are improved. Meanwhile, the synthetic carbon film resistance material can also be used as a sensitive element of a potential type linear displacement sensor, and in addition, the conductive material can also be used as a semiconductive shielding material in medium and high voltage cables; and can also be used as an anti-static film bag, an IC package, an LCD tray and the like required in the production process of precise electronic components such as integrated circuits, wafers and the like in electronic products.
In the invention, the substrate ceramic 1 is made of alumina ceramic which has insulativity, thermal conductivity and thermal expansion coefficient matched with the resistor body and is easy to process and form, and the cast membrane suitable for shrinkage and thermal expansion coefficient is prepared by doping design of alumina ceramic powder, casting additive design and casting process optimization. The casting film is cut into a substrate ceramic 1 of a suitable size. Then, through holes for realizing electrical connection are punched, then, leads and metal pads 3 are printed by screen printing through a high-precision screen, and then, the through holes are metalized to manufacture signal leading-out holes 4. And (3) placing the prepared green body into a glue discharging furnace, setting a glue discharging system according to the thickness of the green body and a thermogravimetric analysis curve, and finally placing the green body after glue discharging into a sintering furnace to obtain the cooked porcelain after sintering. Then, photoresist is coated on the surface of the ceramic in a suspending way, and photoresist is patterned by sequentially carrying out spin coating, prebaking, exposure, development and postbaking; and then, manufacturing a resistor film by a magnetron sputtering platform to prepare the resistor film 2. And finally, forming the metal film by adopting a reverse glue process.
In the invention, the preparation principle of the resistance film 2 is as follows: diamond-like carbon film is an sp consisting mainly of diamond phase3Sp of hybridized bonds and graphite cluster phase2The carbon network structure formed by three-dimensional cross combination of hybrid bonds has the performances of high hardness, low friction coefficient, high wear resistance, excellent chemical inertness, corrosion resistance and the like, and has wide application prospects in the fields of aerospace, automobiles, biomedicine, optics and the like. As a novel carbon-based functional film material with the best engineering application prospect, the carbon-based functional film material is concerned by countries and business circles in the world. Film properties not only depend on sp3/sp2The carbon content is also closely related to the content, size, distribution and other microstructures of the constantan metal in the amorphous carbon network.
According to the growth mechanism of diamond-like carbon (DLC) thin film-sub-implantation model, sp in the thin film3The bonds are formed by means of an unbalanced dynamic process that certain energy particles continuously bombard the surface of a substrate, incident particles penetrate through the outermost layer of the film under sufficient energy and enter the subsurface to grow, local densification of the film is caused, atomic recombination, distortion of interatomic bond length or bond angle increase occur, high residual stress in the film can be generated, and doping of metal Cu atoms and Ni atoms can reduce energy change generated during bond angle distortion, so that the residual stress of the DLC film is reduced, the tribological performance of the DLC film can be improved, and the DLC film has ultralow frictional wear performance.
In the invention, the preparation process of the resistance film 2 adopts a magnetron sputtering process, in order to prepare the resistance film with fixed nominal resistance value and simultaneously give consideration to high wear resistance, high hardness, low friction and miniaturization, a radio frequency-to-target magnetron method is adopted to synthesize the resistance film with the thickness of 0.2-2 mu m on the ceramic substrate, graphite and constantan are used as targets, the influence of the process conditions such as sputtering power, substrate temperature, constantan doping amount and the like on the phase structure, surface morphology and square resistance of the carbon film is analyzed, and the optimal experimental conditions and process parameters are determined. The carbon film prepared by the radio frequency magnetron sputtering method is of an amorphous diamond-like structure, the hardness of the carbon film can be improved after heat treatment, the film stress can be eliminated, the resistance value is reduced, the conductivity is improved, and meanwhile, the conductivity of the diamond-like carbon film can be further improved by proper amount of constantan doping.
In the invention, the preparation process of the resistor body adopts a photoetching process, after the precise synthetic carbon film is prepared by a magnetron sputtering process, the heat treatment is firstly carried out, and then a metal film is formed by using a reverse glue process in a photoetching stripping method. The reverse photoresist process method utilizes the reverse property of the reverse photoresist, changes the characteristics of the photoresist through reverse baking and exposure, realizes the trapezoidal reverse mesa groove, and improves the quality of stripping the metal film.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that features described in different dependent claims and herein may be combined in ways different from those described in the original claims. It is also to be understood that features described in connection with individual embodiments may be used in other described embodiments.
Claims (5)
1. The resistor body based on the carbon film nano conductive material is characterized by comprising a substrate ceramic (1), a resistance thin film (2), a metal pad (3) and a signal leading-out hole (4);
the substrate ceramic (1) is of a circular structure, a metal bonding pad (3) with an opening is printed on the upper surface of the inner side of the circular ring of the substrate ceramic (1), a signal leading-out hole (4) is formed in the substrate ceramic (1) at the opening of the metal bonding pad (3), and a resistance film (2) is prepared on the outer surface of the substrate ceramic (1);
the resistance film (2) is a carbon film nano conductive material prepared based on a carbon-constantan double-target co-sputtering method.
2. A method for manufacturing a carbon film nano conductive material-based resistor body, which is used for manufacturing the carbon film nano conductive material-based resistor body according to claim 1, characterized in that the method comprises:
s1, preparing the ceramic powder into a casting film by adopting a casting platform, and then cutting into the substrate ceramic (1) by utilizing a cutting machine according to the set size;
s2, forming a through hole on the substrate ceramic (1) prepared in the S1, and filling metal slurry in the through hole to form a signal leading-out hole (4);
s3, printing a metal pad (3) by adopting a screen printing method, and then sintering to form a cooked porcelain substrate;
s4, putting the cooked ceramic substrate obtained in the S3 into a vacuum coating chamber, and preparing a resistance film (2) made of a carbon film nano conductive material by adopting a magnetron sputtering process;
and S5, forming the resistance film (2) in a stripping mode by adopting a reverse glue process method, and preparing the finished resistor body.
3. The method of manufacturing a carbon film nano conductive material-based resistor body according to claim 2, wherein the sintering method of forming a porcelain-fired substrate of S3 includes:
and forming a green body after the metal bonding pad (3) is printed by a screen, putting the green body into a glue discharging furnace, setting a glue discharging system according to the thickness of the green body and a thermogravimetric analysis curve, putting the green body after glue discharging into a sintering furnace, setting the temperature of the sintering furnace to be 1000 ℃, and sintering to form the cooked porcelain substrate.
4. The method of manufacturing a carbon film nano conductive material based resistor body according to claim 2, wherein the method of manufacturing the carbon film nano conductive material based resistor thin film (2) using a magnetron sputtering process of S4 includes:
preparing a conductive layer with the thickness of 0.2-2 mu m by adopting a magnetron sputtering process, and stripping the sol to form the resistance film (2).
5. The method for preparing a carbon film nano conductive material-based resistor body according to any one of claims 2 to 4, wherein the ceramic powder of S1 is Al with a particle size of 0.5 μm to 1 μm2O3Ceramic powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010526219.0A CN111780653B (en) | 2020-06-09 | 2020-06-09 | Carbon film nano conductive material-based resistor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010526219.0A CN111780653B (en) | 2020-06-09 | 2020-06-09 | Carbon film nano conductive material-based resistor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111780653A CN111780653A (en) | 2020-10-16 |
| CN111780653B true CN111780653B (en) | 2022-01-07 |
Family
ID=72756020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010526219.0A Active CN111780653B (en) | 2020-06-09 | 2020-06-09 | Carbon film nano conductive material-based resistor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111780653B (en) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1108967A (en) * | 1965-08-23 | 1968-04-10 | Matsushita Electric Ind Co Ltd | Carbon film resistor composition |
| JPS60247468A (en) * | 1984-05-22 | 1985-12-07 | Chobe Taguchi | Improvement of bearing and sliding material |
| UA68778A (en) * | 2003-10-24 | 2004-08-16 | Zaporizhia State University | Diamond-like film and method for making it |
| CN1695209A (en) * | 2002-09-30 | 2005-11-09 | 通用电气公司 | Techniques for fabricating a resistor on a flexible base material |
| CN101315824A (en) * | 2008-06-30 | 2008-12-03 | 广东风华高新科技股份有限公司 | Production method of ceramic substrate resistor plate, and resistor plate acquired by this |
| CN103184415A (en) * | 2011-12-28 | 2013-07-03 | 深南电路有限公司 | Target material, resistive film, thin-film resistor member, circuit board and manufacturing methods |
| CN203150348U (en) * | 2012-11-15 | 2013-08-21 | 赵经燕 | Potentiometer for gas valve angle sensor |
| CN104851968A (en) * | 2015-05-21 | 2015-08-19 | 中国特种设备检测研究院 | Anisotropy film for in-plane strain sensor, and preparation method thereof |
| CN104947037A (en) * | 2015-05-30 | 2015-09-30 | 中国科学院宁波材料技术与工程研究所 | Doped diamond-like film and preparation method thereof |
| CN109972082A (en) * | 2019-04-16 | 2019-07-05 | 中国科学院兰州化学物理研究所 | The method that carbon-based plural layers are prepared using closed field-magnetron sputtered deposition technology |
| TWI666269B (en) * | 2018-03-16 | 2019-07-21 | 新力應用材料有限公司 | Resistance material, conductive terminal material, resistor and method of manufacturing the same |
| CN110635139A (en) * | 2019-09-12 | 2019-12-31 | 深圳先进技术研究院 | Copper current collector, method for manufacturing the same, negative electrode, and secondary battery |
-
2020
- 2020-06-09 CN CN202010526219.0A patent/CN111780653B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1108967A (en) * | 1965-08-23 | 1968-04-10 | Matsushita Electric Ind Co Ltd | Carbon film resistor composition |
| JPS60247468A (en) * | 1984-05-22 | 1985-12-07 | Chobe Taguchi | Improvement of bearing and sliding material |
| CN1695209A (en) * | 2002-09-30 | 2005-11-09 | 通用电气公司 | Techniques for fabricating a resistor on a flexible base material |
| UA68778A (en) * | 2003-10-24 | 2004-08-16 | Zaporizhia State University | Diamond-like film and method for making it |
| CN101315824A (en) * | 2008-06-30 | 2008-12-03 | 广东风华高新科技股份有限公司 | Production method of ceramic substrate resistor plate, and resistor plate acquired by this |
| CN103184415A (en) * | 2011-12-28 | 2013-07-03 | 深南电路有限公司 | Target material, resistive film, thin-film resistor member, circuit board and manufacturing methods |
| CN203150348U (en) * | 2012-11-15 | 2013-08-21 | 赵经燕 | Potentiometer for gas valve angle sensor |
| CN104851968A (en) * | 2015-05-21 | 2015-08-19 | 中国特种设备检测研究院 | Anisotropy film for in-plane strain sensor, and preparation method thereof |
| CN104947037A (en) * | 2015-05-30 | 2015-09-30 | 中国科学院宁波材料技术与工程研究所 | Doped diamond-like film and preparation method thereof |
| TWI666269B (en) * | 2018-03-16 | 2019-07-21 | 新力應用材料有限公司 | Resistance material, conductive terminal material, resistor and method of manufacturing the same |
| CN109972082A (en) * | 2019-04-16 | 2019-07-05 | 中国科学院兰州化学物理研究所 | The method that carbon-based plural layers are prepared using closed field-magnetron sputtered deposition technology |
| CN110635139A (en) * | 2019-09-12 | 2019-12-31 | 深圳先进技术研究院 | Copper current collector, method for manufacturing the same, negative electrode, and secondary battery |
Non-Patent Citations (1)
| Title |
|---|
| 非平衡磁控溅射类金刚石碳膜的性能;柳翠 等;《材料研究学报》;20040430;第18卷(第2期);第171-175页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111780653A (en) | 2020-10-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9029180B2 (en) | Printed temperature sensor | |
| US20230183138A1 (en) | Integrated polymer-derived ceramic thin-film sensor produced by layser pyrolysis and additive manufacturing and fabrication method thereof | |
| CN103145336B (en) | A kind of borosilicate glass and ball-aluminium oxide LTCC green band and preparation method thereof | |
| JPWO2009133766A1 (en) | Multilayer coil component and manufacturing method thereof | |
| JPWO2014061670A1 (en) | Multilayer coil component and manufacturing method thereof | |
| CN106892685B (en) | Ceramic metallized film and preparation method thereof | |
| US7404331B2 (en) | Sensor assembly, transformers and methods of manufacture | |
| CN112435822B (en) | Preparation method of high-efficiency Fe-Si-Al magnetic powder core and prepared Fe-Si-Al magnetic powder core | |
| CN111780653B (en) | Carbon film nano conductive material-based resistor and preparation method thereof | |
| CN102049514B (en) | Powder for aluminum oxide ceramics nano metallized paste and preparation method thereof | |
| CN205595320U (en) | Ceramic baseplate | |
| CN104550975B (en) | Method for preparing silicon-aluminum alloy electronic packaging material by virtue of rapid injection molding | |
| CN107473774A (en) | The preparation method of copper ceramic substrate | |
| CN108893740B (en) | Method for preparing high-temperature insulating film by liquid-gas phase alternate deposition | |
| CN103560204A (en) | Thin film thermocouple for metal cutting temperature measurement and manufacturing method thereof | |
| CN104649678B (en) | Method and the ceramic base Meta Materials of conduction geometry is formed in ceramic material surfaces | |
| US20220030707A1 (en) | Laminated ceramic sintered body board for electronic device, electronic device, chip resistor, and method for manufacturing chip resistor | |
| CN111206216B (en) | Mosaic target material experiment design method capable of controlling film components | |
| JP2012094605A (en) | Three-dimensional substrate and method of manufacturing the same | |
| WO2015022207A1 (en) | Ferrite component for power applications and process for manufacturing the component | |
| CN108447789B (en) | Preparation method of flexible film varactor | |
| Liu et al. | A rapid fabrication approach for the capacitive accelerometer based on 3D printing and a silver particle-free ink | |
| Jagtap et al. | In-house development of co-fireable thick film silver conductor for LTCC applications | |
| JP2022021302A (en) | Laminated ceramics sintered body substrate for electronic device, electronic device, chip resistor, and manufacturing method of chip resistors | |
| Bangali et al. | Effect of ink organics on cambering of an Ag-metallized low temperature co-fired ceramics (LTCC) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |