CN111761419A - Adhesive tape grinding process for repairing edge damage of wafer - Google Patents
Adhesive tape grinding process for repairing edge damage of wafer Download PDFInfo
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- CN111761419A CN111761419A CN202010528458.XA CN202010528458A CN111761419A CN 111761419 A CN111761419 A CN 111761419A CN 202010528458 A CN202010528458 A CN 202010528458A CN 111761419 A CN111761419 A CN 111761419A
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- grinding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
Abstract
The invention relates to the technical field of wafer processing. The adhesive tape grinding process for repairing the edge damage of the wafer is characterized by comprising the following steps of firstly, soaking and corroding the wafer by adopting an end face corrosion method; and secondly, placing the wafer to be repaired on a grinding rotary carrying platform through the first manipulator, moving the grinding rotary carrying platform to the position of a grinding head, grinding the edge of the wafer through the grinding head, flushing the contact part of the grinding head and the wafer by cooling liquid in the grinding process of the grinding head and the wafer, wherein the grinding part of the grinding head is a silicon carbide tape. This patent is effectively ground the wafer edge, makes it reach the purpose of getting rid of the damage layer, effectively restores the edge, makes the wafer quality reach the qualification.
Description
Technical Field
The invention relates to the technical field of wafer processing, in particular to a grinding process.
Background
After the wafer is subjected to secondary chamfering, the wafer with the OF surface (positioning plane) is cleaned after polishing, and during cleaning after polishing, the roller in the tank rotates, and the OF surface (positioning plane) OF the wafer rubs against the roller, resulting in serious damage to the edge OF the OF surface (positioning plane). The presence of such damage may lead to various defects during epitaxy.
Conventionally, an end face corrosion method is adopted, a layer of acid-proof adhesive tape is adhered to the surface of a wafer, a silicon dioxide film to be protected is protected, the whole wafer is soaked in an HF (hydrogen fluoride) tank for chemical corrosion, the soaking time is 6min, and the acid-proof adhesive tape on the surface of the soaked wafer is peeled. Since HF and pure silicon (wafer) do not chemically react during the soaking process and no amount of removal of the end face occurs, there is no way to repair the damaged layer at the edge (end face) of the wafer.
There is currently a lack of a method for repairing damaged layers at the edge (end face) of a composite wafer.
Disclosure of Invention
In view of the problems in the prior art, the present invention provides a tape grinding process for repairing damage to an edge of a wafer, so as to solve at least one of the above technical problems.
In order to achieve the purpose, the invention provides a tape grinding process for repairing the edge damage of a wafer, which is characterized by comprising the following steps of firstly, soaking and corroding the wafer by adopting an end face corrosion method;
and secondly, placing the wafer to be repaired on a grinding rotary carrying platform through the first manipulator, moving the grinding rotary carrying platform to the position of a grinding head, grinding the edge of the wafer through the grinding head, flushing the contact part of the grinding head and the wafer by cooling liquid in the grinding process of the grinding head and the wafer, wherein the grinding part of the grinding head is a silicon carbide tape.
This patent is effectively ground the wafer edge, makes it reach the purpose of getting rid of the damage layer, effectively restores the edge, makes the wafer quality reach the qualification.
Preferably, in the second step, the grinding rotary carrier is mounted on a conveying mechanism, and the loading area and the grinding area are sequentially arranged in the guiding direction of the conveying mechanism;
the grinding area is in butt joint with a blanking area through a third manipulator, and a wafer box for placing the repaired wafer is placed in the blanking area;
the second mechanical arm takes the wafer placed in the feeding area out of the wafer box in a single piece mode and places the wafer into the positioning area, and the positioning area positions the positioning plane of the wafer through the laser positioner; the positioning requirement is that when the wafer after positioning is placed on a grinding rotary carrying platform in the wafer loading area by the first mechanical arm, the positioning plane of the wafer is opposite to the silicon carbide tape.
The production efficiency is convenient to accelerate. The grinding effect is ensured.
Adhering a layer of acid-proof adhesive tape on the surface of the wafer to protect the silicon dioxide film on the outer surface of the wafer, soaking the wafer in an HF tank for 6min, and stripping the acid-proof adhesive tape on the surface of the soaked wafer.
More preferably, in the second step, the polishing step is performed in the following order:
1) grinding the positioning plane of the wafer; the grinding rotary carrying platform does not rotate, and the grinding head grinds the positioning plane of the wafer at the speed of 200 rpm/min;
2) grinding the periphery of the wafer; the polishing rotary stage rotates 360 DEG at a speed of 1000rpm/min, and the polishing head polishes the outer periphery of the wafer at a speed of 200 rpm/min.
Specifically, when the positioning plane of the wafer is ground, the following five stages are sequentially carried out;
in the first stage, the grinding angle is 0 DEG, the grinding time is 55 s-57 s,
in the second stage, the grinding angle is 67-69 degrees, and the grinding time is 0.5-3 s;
in the third stage, the grinding angle is 0 DEG, and the grinding time is 0 s;
in the fourth stage, the grinding angle is-67 degrees to-65 degrees, and the grinding time is 0.5s to 3 s;
in the fifth stage, the grinding angle is 0 DEG, and the grinding time is 0 s.
The silicon carbide tape is arranged on a conveying roller mechanism and is conveyed to the side of the grinding head contacting with the wafer by the conveying roller mechanism;
the feeding speed of the silicon carbide tape during grinding was 130 mm/min.
The pressure when the silicon carbide tape contacted the wafer was 8N.
The tension of the silicon carbide tape during grinding is 3N.
During the polishing, the polishing head is changed from the first stage to the second stage, from the second stage to the third stage, from the third stage to the fourth stage, and from the fourth stage to the fifth stage, and the moving speed of the polishing head is 5 rpm/min.
Specifically, when the periphery of the wafer is ground, the following five stages are sequentially carried out;
in the first stage, the grinding angle is 0 DEG, the grinding time is 8s-10s,
in the second stage, the grinding angle is 67-69 degrees, and the grinding time is 0.5-3 s;
in the third stage, the grinding angle is 0 DEG, and the grinding time is 0 s;
in the fourth stage, the grinding angle is-67 degrees to-65 degrees, and the grinding time is 0.5s to 3 s;
in the fifth stage, the grinding angle is 0 DEG, and the grinding time is 0 s.
In the second step, after the grinding is finished, when pure water is used for washing the surface of the wafer, the washing time is 1s, and the grinding rotary carrying platform rotates 360 degrees at the speed of 2000 rpm/min.
And in the second step, after the pure water is washed, blowing the water on the surface of the silicon wafer by using compressed air for 5 s.
The pressure when the silicon carbide tape contacted the wafer was 8N.
The tension of the silicon carbide tape during grinding is 3N.
Drawings
FIG. 1 is a schematic view of the positions of a silicon carbide tape and a wafer during polishing according to the present invention;
FIG. 2 is a schematic diagram of a tape grinding process for repairing edge damage of a wafer according to the present invention;
FIG. 3 is a view under a prior art wafer edge microscope;
FIG. 4 is a view under a microscope of a repaired wafer edge according to the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Referring to fig. 1 to 4, a tape grinding process for repairing damage to an edge of a wafer includes the steps of,
step one, soaking and corroding a wafer by adopting an end face corrosion method; sticking an acid-proof adhesive tape layer on the surface of the wafer to protect the silicon dioxide film on the outer surface of the wafer, soaking the wafer in an HF (hydrogen fluoride) tank for chemical corrosion for 6min, and stripping the acid-proof adhesive tape on the surface of the soaked wafer; conveying the wafer to a loading area;
taking the wafer placed in the feeding area out of the wafer box in a single piece mode by the second mechanical arm, placing the wafer into the positioning area, and positioning a positioning plane of the wafer by the positioning area through the laser positioner; the positioning requirement is that when the positioned wafer is placed on a grinding rotary carrying platform in the wafer loading area by the first mechanical arm, the positioning plane of the wafer is the silicon carbide tape which is over against the grinding area.
The positioning method may specifically be as follows: for example, be equipped with the revolving stage on the locating area, the fixed wafer of revolving stage, the radial periphery of revolving stage is equipped with a positioning mechanism, and positioning mechanism includes infrared sensor group, and infrared sensor group includes the linear main infrared sensor of arranging of style of calligraphy and is located main infrared sensor and keeps away from the supplementary infrared sensor of revolving stage center side, and infrared sensor includes the infrared emitter and the infrared receiving device of adjacent setting. Once all the main infrared sensors sense the shielding signals at the wafer positioning plane, the auxiliary infrared sensors do not sense the wafer shielding signals, and the positioning is completed. The distance from the auxiliary infrared sensor to the center of the rotating table is smaller than the distance from the rest outer circumferences of the wafer except the positioning plane side to the center of the wafer.
The grinding rotary carrying platform moves to the position of a grinding head of the grinding area, the edge of the wafer is ground through the grinding head, and in the grinding process of the grinding head and the wafer, the cooling liquid washes the contact between the grinding head and the wafer. The grinding part of the grinding head is a silicon carbide tape. The grinding area is in butt joint with a blanking area through a third mechanical arm, and a wafer box for placing the repaired wafer is placed in the blanking area.
The movement direction of the grinding head is the reciprocating motion in the length direction of the positioning plane which is parallel to the adjustment of the positioning area.
The grinding process comprises the following steps:
1) grinding the positioning plane of the wafer; the polishing rotary stage does not rotate, and the polishing head polishes the positioning plane of the wafer at a speed of 200 rpm/min. The pressure when the silicon carbide tape contacted the wafer was 8N. The tension of the silicon carbide tape during grinding is 3N.
In the first stage, the grinding angle is 0 DEG, the grinding time is 55 s-57 s,
in the second stage, the grinding angle is 67-69 degrees, and the grinding time is 0.5-3 s;
in the third stage, the grinding angle is 0 DEG, and the grinding time is 0 s;
in the fourth stage, the grinding angle is-67 degrees to-65 degrees, and the grinding time is 0.5s to 3 s;
in the fifth stage, the grinding angle is 0 DEG, and the grinding time is 0 s.
Preferably, in the first stage, the grinding angle is 0 °, the grinding time is 55s,
in the second stage, the grinding angle is 67-69 degrees, and the grinding time is 0.5 s;
in the third stage, the grinding angle is 0 DEG, and the grinding time is 0 s;
in the fourth stage, the grinding angle is-67 degrees to-65 degrees, and the grinding time is 0.5 s;
in the fifth stage, the grinding angle is 0 DEG, and the grinding time is 0 s.
The grinding angle and the grinding time can be finely adjusted according to actual requirements.
The silicon carbide tape is arranged on a conveying roller mechanism and is conveyed to the side of the grinding head contacting with the wafer by the conveying roller mechanism; the feeding speed of the silicon carbide tape during grinding was 130 mm/min.
The grinding angle refers to the inclination angle of the grinding head, the grinding head is 0 degree in the vertical state, the second stage is the grinding angle formed by rotating the grinding head anticlockwise, and therefore grinding and repairing of the chamfer on the wafer are achieved. And in the fourth stage, the grinding head is rotated clockwise to form a grinding angle, so that the grinding and repairing of the lower chamfer of the wafer are realized.
During the polishing, the polishing head is changed from the first stage to the second stage, from the second stage to the third stage, from the third stage to the fourth stage, and from the fourth stage to the fifth stage, and the moving speed of the polishing head is 5 rpm/min.
2) Grinding the periphery of the wafer; the polishing rotary stage rotates 360 DEG at a speed of 1000rpm/min, and the polishing head polishes the outer periphery of the wafer at a speed of 200 rpm/min. The pressure when the silicon carbide tape contacted the wafer was 8N. The tension of the silicon carbide tape during grinding is 3N.
Specifically, when the periphery of the wafer is ground, the following five stages are sequentially carried out;
in the first stage, the grinding angle is 0 DEG, the grinding time is 8s-10s,
in the second stage, the grinding angle is 67-69 degrees, and the grinding time is 0.5-3 s;
in the third stage, the grinding angle is 0 DEG, and the grinding time is 0 s;
in the fourth stage, the grinding angle is-67 degrees to-65 degrees, and the grinding time is 0.5s to 3 s;
in the fifth stage, the grinding angle is 0 DEG, and the grinding time is 0 s.
Preferably, in the first stage, the grinding angle is 0 °, the grinding time is 9s,
in the second stage, the grinding angle is 67-69 degrees, and the grinding time is 0.5 s;
in the third stage, the grinding angle is 0 DEG, and the grinding time is 0 s;
in the fourth stage, the grinding angle is-67 degrees to-65 degrees, and the grinding time is 0.5 s;
in the fifth stage, the grinding angle is 0 DEG, and the grinding time is 0 s.
The grinding angle and the grinding time can be finely adjusted according to actual requirements.
After polishing, when the wafer surface was rinsed with pure water, the rinsing time was 1s, and the polishing platen rotated 360 ° at a speed of 2000 rpm/min.
After the pure water rinsing, the water on the silicon wafer surface was blown dry with compressed air for 5 seconds.
After the grinding process is adopted, the damage of the edge of the wafer is obviously repaired. In fig. 2, a is the edge of the wafer. FIG. 3 is a microscopic view of the edge of a wafer after a conventional pure end face etching process. Fig. 4 is a microscopic view of the repaired wafer edge.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that it is obvious to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and these modifications and improvements should also be considered as the protection scope of the present invention.
Claims (10)
1. The adhesive tape grinding process for repairing the edge damage of the wafer is characterized by comprising the following steps of firstly, soaking and corroding the wafer by adopting an end face corrosion method;
and secondly, placing the wafer to be repaired on a grinding rotary carrying platform through the first manipulator, moving the grinding rotary carrying platform to the position of a grinding head, grinding the edge of the wafer through the grinding head, flushing the contact part of the grinding head and the wafer by cooling liquid in the grinding process of the grinding head and the wafer, wherein the grinding part of the grinding head is a silicon carbide tape.
2. The tape grinding process for repairing wafer edge damage according to claim 1, wherein: in the second step, the grinding rotary carrying platform is arranged on a conveying mechanism, and a loading area and a grinding area are sequentially arranged in the guiding direction of the conveying mechanism;
the grinding area is in butt joint with a blanking area through a third manipulator, and a wafer box for placing the repaired wafer is placed in the blanking area;
the second mechanical arm takes the wafer placed in the feeding area out of the wafer box in a single piece mode and places the wafer into the positioning area, and the positioning area positions the positioning plane of the wafer through the laser positioner; the positioning requirement is that when the wafer after positioning is placed on a grinding rotary carrying platform in the wafer loading area by the first mechanical arm, the positioning plane of the wafer is opposite to the silicon carbide tape.
3. The tape grinding process for repairing wafer edge damage according to claim 1, wherein: adhering a layer of acid-proof adhesive tape on the surface of the wafer to protect the silicon dioxide film on the outer surface of the wafer, soaking the wafer in an HF tank for 6min, and stripping the acid-proof adhesive tape on the surface of the soaked wafer.
4. The tape grinding process for repairing wafer edge damage according to claim 1, wherein: in the second step, the grinding process is as follows in sequence:
1) grinding the positioning plane of the wafer; the grinding rotary carrying platform does not rotate, and the grinding head grinds the positioning plane of the wafer at the speed of 200 rpm/min;
2) grinding the periphery of the wafer; the polishing rotary stage rotates 360 DEG at a speed of 1000rpm/min, and the polishing head polishes the outer periphery of the wafer at a speed of 200 rpm/min.
5. The tape grinding process for repairing wafer edge damage according to claim 4, wherein: when the positioning plane of the wafer is ground, the following five stages are sequentially carried out;
in the first stage, the grinding angle is 0 DEG, the grinding time is 55 s-57 s,
in the second stage, the grinding angle is 67-69 degrees, and the grinding time is 0.5-3 s;
in the third stage, the grinding angle is 0 DEG, and the grinding time is 0 s;
in the fourth stage, the grinding angle is-67 degrees to-65 degrees, and the grinding time is 0.5s to 3 s;
in the fifth stage, the grinding angle is 0 DEG, and the grinding time is 0 s.
6. The tape grinding process for repairing wafer edge damage according to claim 5, wherein: the silicon carbide tape is arranged on a conveying roller mechanism and is conveyed to the side of the grinding head contacting with the wafer by the conveying roller mechanism;
the feeding speed of the silicon carbide tape during grinding was 130 mm/min.
7. The tape grinding process for repairing wafer edge damage according to claim 5, wherein: during the polishing, the polishing head is changed from the first stage to the second stage, from the second stage to the third stage, from the third stage to the fourth stage, and from the fourth stage to the fifth stage, and the moving speed of the polishing head is 5 rpm/min.
8. The tape grinding process for repairing wafer edge damage according to claim 4, wherein: when the periphery of the wafer is ground, the following five stages are sequentially carried out;
in the first stage, the grinding angle is 0 DEG, the grinding time is 8s-10s,
in the second stage, the grinding angle is 67-69 degrees, and the grinding time is 0.5-3 s;
in the third stage, the grinding angle is 0 DEG, and the grinding time is 0 s;
in the fourth stage, the grinding angle is-67 degrees to-65 degrees, and the grinding time is 0.5s to 3 s;
in the fifth stage, the grinding angle is 0 DEG, and the grinding time is 0 s.
9. The tape grinding process for repairing wafer edge damage according to claim 1, wherein: in the second step, after the grinding is finished, when pure water is used for washing the surface of the wafer, the washing time is 1s, and the grinding rotary carrying platform rotates 360 degrees at the speed of 2000 rpm/min.
10. The tape grinding process for repairing wafer edge damage according to claim 9, wherein: and in the second step, after the pure water is washed, blowing the water on the surface of the silicon wafer by using compressed air for 5 s.
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Cited By (1)
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