CN111750770B - Sensor based on metal sputtering film pressure-sensitive chip - Google Patents
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Abstract
The invention relates to a sensor based on a metal sputtering film pressure-sensitive chip, which comprises: the annular section and the rectangular section, wherein the rectangular section is arranged in the annular section, four corners of the rectangular section are respectively crossed with the annular section to form four cross points, a lead is respectively led out from each cross point, the four cross points are A, B, C, D respectively according to the clockwise direction, a circular center point is set to be O, the annular section is divided into a first annular section, a second annular section, a third annular section and a fourth annular section through each cross point according to the clockwise direction, and the rectangular section is divided into a first rectangular section, a second rectangular section, a third rectangular section and a fourth rectangular section through each cross point.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a sensor based on a metal sputtering film pressure-sensitive chip.
Background
In the development process of a novel aerospace craft, in order to ensure that the material keeps good and stable mechanical properties at high temperature, a C/C composite material (carbon/carbon composite material) is required to be adopted for manufacturing a structural part. The structural components are subjected to severe working environments in work, such as environments with high temperature, strong oxidation, strong vibration, strong wind resistance and other complex mechanical loads, so that the key for solving the problem is to obtain the actual structural characteristics of the high-temperature structural material in the flying state through tests. In the prior art, among many test requirements, ablation test of high-temperature structural materials is a more outstanding requirement at present, because the ablation thickness of the outer surface of the aircraft is measured in real time in the flying state of the aircraft, so that the change relation of the ablation rate of the outer surface of the aircraft along with time in the working state of the aircraft is obtained, and the ablation test is very necessary for the flying safety and the structural design of the aircraft.
However, due to the harsh test conditions in the flight state and the complexity of the aircraft shell structure, the real-time measurement of the ablation thickness in the field in the prior art has considerable difficulty, and the previously known methods such as ultrasonic thickness measurement, ray thickness measurement, thermocouple target line thickness measurement and the like are difficult to meet the requirements of real-time measurement of the ablation on the surface of the aircraft in practical application or due to the limitations of installation size and installation conditions or due to the defects of resolution and precision.
Chinese patent publication No. CN105444661B discloses an ablation sensor based on metal sputtering thin film technology, which basically adopts the basic principle of metal sputtering, but adopts a basic linear determination mode in the actual measurement, the test can only measure the voltage or pressure value information in a linear or superposition mode, the measurement range is narrow, and it is easily influenced by the environment.
Disclosure of Invention
Therefore, the invention provides a sensor based on a metal sputtering film pressure-sensitive chip, which is used for overcoming the problems in the prior art.
In order to achieve the above object, the present invention provides a sensor based on a metal sputtered thin film pressure sensitive chip, comprising: the device comprises an annular section and a rectangular section, wherein the rectangular section is arranged inside the annular section, four corners of the rectangular section are respectively crossed with the annular section to form four cross points, a lead is respectively led out of each cross point, the four cross points are A, B, C, D respectively according to the clockwise direction, a circular central point is set to be O, the annular section is divided into a first annular section, a second annular section, a third annular section and a fourth annular section through each cross point according to the clockwise direction, and the rectangular section is divided into a first rectangular section, a second rectangular section, a third rectangular section and a fourth rectangular section through each cross point;
four parts of the sensor are set, namely: a first detection part OAB formed by a first annular section and a first rectangular section, a second detection part OBC formed by a second annular section and a second rectangular section, a third detection part OCD formed by a third annular section and a third rectangular section, and a fourth detection part ODA formed by a fourth annular section and a fourth rectangular section, wherein each part can be respectively and independently detected or adjacent parts can be simultaneously detected;
in any one of the detection sections, the first part pressure detection information is:
U1＝(a×U11+b×U21)×Z1×Y1(1)
wherein U11 represents the pressure differential created by the first annular segment and U21 represents the pressure differential created by the first rectangular segment; a denotes the error coefficient of the first arc segment, b denotes the error coefficient of the first rectangular segment, Z1 denotes the environmental reference, Y1 denotes the single detection section coefficient, set to 0.912.
Further, in the above formula (1), U11 ═ i × n11, and n11 denotes the remaining number of fusion of the wire grids of the first ring segment; where U21 is i × n21, and n21 represents the remaining amount of fusion of the wire grid of the first rectangular segment.
Further, when determining the arc segment error coefficient a, the same pressure value is respectively applied to the first arc segment, the second arc segment, the third arc segment and the fourth arc segment of the cable with the same number of wire grids, voltage values of the segments are respectively measured, when the same current i is same, the residual numbers of the wire grids of the segments are respectively calculated to be n1, n2, n3 and n4, the maximum residual number is selected to be n01, the minimum residual number is n02, the error amount is n01-n02, and the error coefficient a is calculated to be 1- (n01-n02) [ (n1+ n2+ n3+ n4)/4 ].
Further, when determining the error coefficient b of the rectangular section, applying the same pressure value to the first rectangular section, the second rectangular section, the third rectangular section and the fourth rectangular section with the same wire grid respectively, measuring the voltage value of each section respectively, calculating the residual quantity of the wire grid of each section respectively as N1, N2, N3 and N4 at the same current i, selecting the maximum residual quantity as N1, the minimum residual quantity as N2 and the error quantity as N1-N2, and calculating the error coefficient b as 1- (N1-N2)/[ (N1+ N2+ N3+ N4)/4 ].
Further, when the environment parameter Z1 is calculated, Z1 is (Z11+ Z12)/2, where Z11 represents an annular environment parameter, Z12 represents a rectangular environment parameter, and after the pressure difference U11 generated by the first annular segment is measured, the remaining number of fused wire grids of the first annular segment n11 is determined, and the remaining number of the remaining arc segments is determined according to the ratio of the remaining number of wire grids of each arc segment in the error determination process under the same current, and the process is as follows:
the real-time calculation number of the second arc-shaped segment is n12 ═ n11 × (n2/n 1);
the real-time calculation number of the third arc-shaped segment is n13 ═ n11 × (n3/n 1);
the real-time calculation number of the fourth arc-shaped segment is n14 ═ n11 × (n4/n 1);
the maximum residual quantity n001 is determined, the minimum residual quantity being n002, and the ambient variable Z11 is 1- (n001-n002)/[ (n11+ n12+ n13+ n14)/4 ].
Further, after the pressure difference U12 generated by the first rectangular segment is measured, the remaining number of the fused wires of the wire grid of the first rectangular segment N11 is determined according to the remaining number ratio of the wire grid of each rectangular segment in the error determination process under the same current, and the process is as follows:
the real-time number of second rectangle segments is N12 ═ N11 × (N2/N1);
the real-time calculation number of the third rectangular segment is N13 ═ N11 × (N3/N1);
the real-time calculation number of the fourth rectangular segment is N14 ═ N11 × (N4/N1);
the maximum residual amount N001 is determined, and the minimum residual amount is N002, and the rectangular environment parameter Z12 is 1- (N001-N002)/[ (N11+ N12+ N13+ N14)/4 ].
Further, in any two of the adjacent regions, the pressure difference is determined as:
U1-2＝(U1+U2)×Y12(2)
in the above equation, U1 represents the first partial pressure detection value, U2 represents the second partial pressure detection value, wherein,
U1＝(a×U11+b×U21)×Z1×Y1
U2＝(a2×U12+b2×U22)×Z2×Y2。
further, in the above U2 ═ (a2 × U12+ b2 × U22) × Z2 × Y2, U12 indicates the pressure difference generated by the second arc segment, U22 indicates the pressure difference generated by the second rectangle, Y12 indicates the two-part detection section coefficient, and is set to 0.997;
wherein U12 ═ i × n12, and n12 denotes the remaining number of fuses of the wire grids of the second ring segment; u22 ═ i × n22, and n22 denotes the remaining number of fused wire grids of the second rectangular segment.
Further, for the pressure difference of the three successive portions, such as the first region, the second region, and the third region, the determination is made by:
U1-2-3＝(U1+U2+U3)×Y123(3)
in the above equation, U1 represents the first partial pressure detection value, U2 represents the second partial pressure detection value, U3 represents the third partial pressure detection value, Y123 represents the two-part detection partial coefficient, and is set to 0.996, wherein,
U1＝(a×U11+b×U21)×Z1×Y1
U2＝(a2×U12+b2×U22)×Z2×Y2
U3＝(a3×U13+b3×U23)×Z3×Y3。
further, in the above U3 ═ (a3 × U13+ b3 × U23) × Z3 × Y3, U13 indicates the pressure difference generated by the third arc segment, U23 indicates the pressure difference generated by the third rectangle, where U13 ═ i × n13, and n13 indicates the remaining amount of fusion of the wire grid of the third ring segment; u23 ═ i × n23, and n23 denotes the remaining number of fused wire grids of the third rectangular segment.
Compared with the prior art, the sensor based on the metal sputtering film pressure-sensitive chip has the advantages that the detection part is divided into the first detection part OAB formed by the first annular section and the first rectangular section, the second detection part OBC formed by the second annular section and the second rectangular section, the third detection part OCD formed by the third annular section and the third rectangular section and the fourth detection part ODA formed by the fourth annular section and the fourth rectangular section, all the parts can be separately detected or adjacent parts can be simultaneously detected, voltage or pressure value information can be measured in a linear, curve or superposition mode in the test process, and the measurement result can be judged by combining with the actual environment.
In particular, when the present invention is measured in sections therein, U11 represents the pressure differential created by the first annular segment, U21 represents the pressure differential created by the first rectangular segment; a represents an error coefficient of a first arc-shaped segment, b represents an error coefficient of a first rectangular segment, Z1 represents an environmental reference parameter, Y1 represents a single detection part coefficient, when determining the arc-shaped segment error coefficient a, the same pressure value is respectively applied to the first arc-shaped segment, the second arc-shaped segment, the third arc-shaped segment and the fourth arc-shaped segment of a cable with the same number of wire grids, voltage values of the segments are respectively measured, when the same current i is same, the residual numbers of the wire grids of the segments are respectively calculated to be n1, n2, n3 and n4, the maximum residual number is selected to be n01, the minimum residual number is n02, and the error amount is n01-n02, and the error coefficient a is calculated to be 1- (n01-n02)/[ (n1+ n2+ n3+ n4)/4 ]. The invention firstly determines the detection parameters of the sensor, and determines the optimal measurement result of a single part by setting the reference quantity and the error calculation quantity.
Particularly, the invention considers the environmental factors, after the pressure difference U11 generated by the first annular section is measured, the remaining quantity n11 of the fusing of the wire grids of the first annular section is determined, and the remaining quantity of the rest arc sections is determined according to the remaining quantity proportion of the wire grids of each arc section in the error judgment process under the same current; the maximum residual quantity n001 is determined, the minimum residual quantity being n002, and the ambient variable Z11 is 1- (n001-n002)/[ (n11+ n12+ n13+ n14)/4 ]. According to the invention, when the actual measurement result is considered according to the preset standard parameters, the optimal parameter information is obtained by calculation according to the standard parameters and is used as the environment correction coefficient, so that the method can be suitable for different detection environments.
Drawings
FIG. 1 is a schematic structural diagram of an environment-friendly sensor based on a metal sputtered thin film pressure sensitive chip according to an embodiment of the invention;
fig. 2 is a schematic diagram of an internal structure of an environment-friendly sensor based on a metal sputtered thin film pressure sensitive chip according to an embodiment of the invention.
Detailed Description
In order that the objects and advantages of the invention will be more clearly understood, the invention is further described below with reference to examples; it should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only for explaining the technical principle of the present invention, and do not limit the scope of the present invention.
It should be noted that in the description of the present invention, the terms of direction or positional relationship indicated by the terms "upper", "lower", "left", "right", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, which are only for convenience of description, and do not indicate or imply that the device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
Furthermore, it should be noted that, in the description of the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Fig. 1 is a schematic structural diagram of an environment-friendly sensor based on a metal sputtered film pressure-sensitive chip according to an embodiment of the present invention; the sensor comprises an annular section and a rectangular section, wherein the rectangular section is arranged inside the annular section, four corners of the rectangular section are respectively crossed with the annular section to form four cross points, a lead wire 10 is respectively led out from each cross point, the four cross points are respectively A, B, C, D in the clockwise direction, and the central point of a circle is set to be O. In the clockwise direction, the ring segments are divided into a first ring segment 11, a second ring segment 12, a third ring segment 13 and a fourth ring segment 14 by respective intersections, and the rectangular segments are divided into a first rectangular segment 21, a second rectangular segment 22, a third rectangular segment 23 and a fourth rectangular segment 24 by respective intersections.
Specifically, the present embodiment sets four portions of the sensor, which are: the first detecting part OAB formed by the first annular section and the first rectangular section, the second detecting part OBC formed by the second annular section and the second rectangular section, the third detecting part OCD formed by the third annular section and the third rectangular section, and the fourth detecting part ODA formed by the fourth annular section and the fourth rectangular section can respectively and independently detect or simultaneously detect adjacent parts, or simultaneously detect two opposite parts.
Referring to fig. 2, an internal structure diagram of a sensor of a pressure sensitive chip of this embodiment is shown, the sensor of this embodiment includes a plurality of wire grids 1, an insulating material 2 is disposed between the wire grids, and two ends of the wire grids are respectively provided with leads 10, when performing real-time online measurement, the wire grids will be fused along with the movement of the ablation layer, resulting in a reduction in the number of the wire grids, and further resulting in a change in the resistance of the wire grids along with the change of the ablation layer, so as to provide a constant current to the sensor, i.e., the change in the resistance of the wire grids can be converted into a change in voltage.
Specifically, when the pressure is measured, the real-time detection voltage is determined according to the remaining fused number N of the wire grids of different detection parts and the total number of the wire grids N: u is i × n.
Specifically, in any one of the detection portions, such as the first portion, the first portion pressure detection information is:
U1＝(a×U11+b×U21)×Z1×Y1 (1)
where U11 represents the pressure differential created by the first annular segment and U21 represents the pressure differential created by the first rectangular segment.
Wherein U11 ═ i × n11, and n11 denotes the remaining number of fuses of the wire grid of the first ring segment;
where U21 is i × n21, and n21 represents the remaining amount of fusion of the wire grid of the first rectangular segment.
Where a denotes the error coefficient of the first arc segment, b denotes the error coefficient of the first rectangular segment, Z1 denotes the environmental reference, and Y1 denotes the single detection section coefficient, set to 0.912.
Specifically, in the embodiment of the present invention, an error coefficient a of an arc-shaped segment and an error coefficient b of a rectangular segment are preset, when the error coefficient a is determined, the same pressure value is respectively applied to a first arc-shaped segment, a second arc-shaped segment, a third arc-shaped segment and a fourth arc-shaped segment with the same wire grid, voltage values of the segments are respectively measured, when the same current i is the same, the remaining number of the wire grid of each segment is respectively calculated to be n1, n2, n3 and n4, the maximum remaining number of the wire grid of each segment is selected to be n01, the minimum remaining number of the wire grid of each segment is n02, and the error amount is n01-n02, and the error coefficient a is calculated to be 1- (n01-n02)/[ (n1+ n2+ n3+ n4)/4 ].
Specifically, when determining the error coefficient b of the rectangular segment, the same pressure value is respectively applied to a first rectangular segment, a second rectangular segment, a third rectangular segment and a fourth rectangular segment with the same wire grid, voltage values of the segments are respectively measured, when the same current i is the same, the residual quantity of the wire grid of each segment is respectively calculated to be N1, N2, N3 and N4, the maximum residual quantity is N1, the minimum residual quantity is N2 and the error quantity is N1-N2, and then the error coefficient b is calculated to be 1- (N1-N2)/[ (N1+ N2+ N3+ N4)/4 ].
Specifically, Z1 represents an environmental reference parameter, and when the environmental parameter Z1 is calculated during real-time pressure measurement, Z1 is (Z11+ Z12)/2, wherein Z11 represents an annular environmental parameter, Z12 represents a rectangular environmental parameter, after the pressure difference U11 generated by the first annular segment is measured, the remaining number n11 of the fused wire grids of the first annular segment is determined, and the remaining number of the remaining arc segments is determined according to the remaining number ratio of the wire grids of each arc segment in the error judgment process under the same current, and the process is as follows:
the real-time calculation number of the second arc-shaped segment is n12 ═ n11 × (n2/n 1);
the real-time calculation number of the third arc-shaped segment is n13 ═ n11 × (n3/n 1);
the real-time calculation number of the fourth arc-shaped segment is n14 ═ n11 × (n4/n 1);
the maximum residual quantity n001 is determined, the minimum residual quantity being n002, and the ambient variable Z11 is 1- (n001-n002)/[ (n11+ n12+ n13+ n14)/4 ].
Specifically, after the pressure difference U12 generated by the first rectangular segment is measured, the remaining number N11 of the fused wire grids of the first rectangular segment is determined according to the remaining number ratio of the wire grids of each rectangular segment in the error determination process under the same current, and the process is as follows:
the real-time number of second rectangle segments is N12 ═ N11 × (N2/N1);
the real-time calculation number of the third rectangular segment is N13 ═ N11 × (N3/N1);
the real-time calculation number of the fourth rectangular segment is N14 ═ N11 × (N4/N1);
the maximum residual amount N001 is determined, and the minimum residual amount is N002, and the rectangular environment parameter Z12 is 1- (N001-N002)/[ (N11+ N12+ N13+ N14)/4 ].
According to the embodiment of the invention, by introducing the error coefficient representing the arc section, the error coefficient representing the rectangular section, the environment reference parameter Z1 and the detection part coefficient Y1, the environment factor and the error coefficient factor during real-time detection are fully considered, and the corresponding accurate standards are respectively adopted for the parts of the arc sections and the parts of the rectangular section, so that the accurate degree of pressure detection is improved.
Specifically, in any two adjacent regions, such as the first region and the second region, the
U1-2＝(U1+U2)×Y12 (2)
In the above equation, U1 represents the first partial pressure detection value, U2 represents the second partial pressure detection value, wherein,
U1＝(a×U11+b×U21)×Z1×Y1
u2 ═ in (a2 × U12+ b2 × U22) × Z2 × Y2 in the above formula,
u12 shows the pressure difference generated by the second arc segment, U22 shows the pressure difference generated by the second rectangle, and Y12 shows the two-part sense portion coefficient, set to 0.997.
Wherein U12 ═ i × n12, and n12 denotes the remaining number of fuses of the wire grids of the second ring segment;
where U22 is i × n22, and n22 represents the remaining amount of fusion of the wire grid of the second rectangular segment.
Where a2 denotes the error coefficient of the second arc segment, b2 denotes the error coefficient of the second rectangular segment, Z2 denotes the environmental reference parameter, and Y2 denotes the single detection section coefficient, which is set to 0.913. In the above, the determination of the environmental reference Z2 and the respective error coefficients refers to the determination of the first arc segment and the first rectangular segment. Because the loss of the pressed area of the adjacent area is small, when the errors of the two detection modes are judged, the error range is required to be reduced, and the coefficient of the two detection parts is 0.997.
Specifically, for the pressure difference of three consecutive parts, such as the first region, the second region, and the third region, the following is determined:
U1-2-3＝(U1+U2+U3)×Y123 (3)
in the above equation, U1 represents the first partial pressure detection value, U2 represents the second partial pressure detection value, U3 represents the third partial pressure detection value, Y123 represents the two-part detection partial coefficient, and is set to 0.996, wherein,
U1＝(a×U11+b×U21)×Z1×Y1
U2＝(a2×U12+b2×U22)×Z2×Y2
U3＝(a3×U13+b3×U23)×Z3×Y3
in the above formula, the first and second carbon atoms are,
u13 shows the pressure difference generated by the third arc segment, U23 shows the pressure difference generated by the third rectangle, wherein U13 is i × n13, and n13 shows the remaining amount of fusion of the wire grid of the third ring segment;
where U23 is i × n23, and n23 represents the remaining amount of fuse of the wire grid of the third rectangular segment.
Where a3 denotes the error coefficient of the third arc segment, b3 denotes the error coefficient of the third rectangular segment, Z3 denotes the environmental reference parameter, and Y3 denotes the single detected part coefficient, which is set to 0.914. In the above, the determination of the environmental reference Z3 and the respective error coefficients refers to the determination of the first arc segment and the first rectangular segment. Because the loss of the pressed area of the adjacent area is small, when the errors of the two detection modes are judged, the error range is required to be reduced, and the coefficient of the two detection parts is 0.996. Meanwhile, the coefficients Y of the single detection section are sequentially increased in the clockwise direction to compensate for the reduction effect of the error operation.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention; various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A sensor based on a metal sputtered thin film pressure sensitive chip, comprising: the device comprises an annular section and a rectangular section, wherein the rectangular section is arranged inside the annular section, four corners of the rectangular section are respectively crossed with the annular section to form four cross points, a lead is respectively led out of each cross point, the four cross points are A, B, C, D respectively according to the clockwise direction, a circular central point is set to be O, the annular section is divided into a first annular section, a second annular section, a third annular section and a fourth annular section through each cross point according to the clockwise direction, and the rectangular section is divided into a first rectangular section, a second rectangular section, a third rectangular section and a fourth rectangular section through each cross point;
four parts of the sensor are set, namely: a first detection part OAB formed by a first annular section and a first rectangular section, a second detection part OBC formed by a second annular section and a second rectangular section, a third detection part OCD formed by a third annular section and a third rectangular section, and a fourth detection part ODA formed by a fourth annular section and a fourth rectangular section, wherein each part can be respectively and independently detected or adjacent parts can be simultaneously detected;
in any one of the detection sections, the first part pressure detection information is:
U1＝(a×U11+b×U21)×Z1×Y1 (1)
wherein U11 represents the pressure differential created by the first annular segment and U21 represents the pressure differential created by the first rectangular segment; a denotes the error coefficient of the first arc segment, b denotes the error coefficient of the first rectangular segment, Z1 denotes the environmental reference, Y1 denotes the single detection section coefficient, set to 0.912.
2. The sputtered metal thin film pressure sensitive chip-based sensor of claim 1, wherein in the above formula (1), U11 ═ i × n11, n11 denotes the remaining number of fused wire grids of the first ring segment;
where U21 is i × n21, and n21 represents the remaining amount of fusion of the wire grid of the first rectangular segment.
3. The metal sputtering thin film pressure sensitive chip based sensor according to claim 2, wherein when determining the arc segment error coefficient a, the same pressure value is applied to the first arc segment, the second arc segment, the third arc segment and the fourth arc segment of the cable with the same number of wire grids, the voltage value of each segment is respectively measured, and when the same current i is used, the remaining number of the wire grids of each segment is respectively calculated to be n1, n2, n3 and n4, the maximum remaining amount is selected to be n01, the minimum remaining amount is n02, and the error amount is n01-n02, and the error coefficient a is 1- (n01-n02)/[ (n1+ n2+ n3+ n4)/4 ].
4. The metal sputtering thin film pressure sensitive chip based sensor according to claim 2, wherein when determining the error coefficient b of the rectangular segment, the same pressure value is applied to the first rectangular segment, the second rectangular segment, the third rectangular segment and the fourth rectangular segment with the same wire grid respectively, the voltage value of each segment is measured respectively, and when the same current i is used, the remaining number of the wire grid of each segment is calculated to be N1, N2, N3 and N4 respectively, the maximum remaining number is selected to be N1, the minimum remaining number is N2, and the error amount is N1-N2 respectively, and then the error coefficient b is calculated to be 1- (N1-N2)/[ (N1+ N2+ N3+ N4)/4 ].
5. The sputtered metal film pressure sensitive chip based sensor of claim 3 wherein the environmental parameter Z1 is calculated as Z1 ═ (Z11+ Z12)/2, wherein Z11 represents a loop environmental parameter and Z12 represents a rectangular environmental parameter, and wherein the remaining number of wire grids in the first loop segment is n11 due to the fuse of the wire grid after the pressure difference U11 generated in the first loop segment is determined, and the remaining number of the remaining arc segments is determined according to the ratio of the remaining number of wire grids in each arc segment in the error determination process under the same current by:
the real-time calculation number of the second arc-shaped segment is n12 ═ n11 × (n2/n 1);
the real-time calculation number of the third arc-shaped segment is n13 ═ n11 × (n3/n 1);
the real-time calculation number of the fourth arc-shaped segment is n14 ═ n11 × (n4/n 1);
the maximum residual quantity n001 is determined, the minimum residual quantity being n002, and the ambient variable Z11 is 1- (n001-n002)/[ (n11+ n12+ n13+ n14)/4 ].
6. The metal sputtering thin film pressure sensitive chip based sensor according to claim 4, wherein the remaining number of the remaining rectangular sections is determined according to the ratio of the remaining number of the wire grids of each rectangular section in the error determination process under the same current by the remaining number of the wire grids of each rectangular section N11 after the pressure difference U12 generated by the first rectangular section is determined, and the process is as follows:
the real-time number of second rectangle segments is N12 ═ N11 × (N2/N1);
the real-time calculation number of the third rectangular segment is N13 ═ N11 × (N3/N1);
the real-time calculation number of the fourth rectangular segment is N14 ═ N11 × (N4/N1);
the maximum residual amount N001 is determined, and the minimum residual amount is N002, and the rectangular environment parameter Z12 is 1- (N001-N002)/[ (N11+ N12+ N13+ N14)/4 ].
7. The metal sputtered thin film pressure sensitive chip based sensor of claim 2, wherein in any two of the adjacent regions, the pressure differential is determined as:
U1-2＝(U1+U2)×Y12 (2)
in the above equation, U1 represents the first partial pressure detection value, U2 represents the second partial pressure detection value, wherein,
U1＝(a×U11+b×U21)×Z1×Y1
U2＝(a2×U12+b2×U22)×Z2×Y2。
8. the sputtered metal film based pressure sensitive chip sensor of claim 7 wherein U2 ═ (a2 × U12+ b2 × U22) × Z2 × Y2, U12 indicates the pressure difference generated by the second arc segment, U22 indicates the pressure difference generated by the second rectangle, Y12 indicates the two-part detection section coefficient, and is set to 0.997;
wherein U12 ═ i × n12, and n12 denotes the remaining number of fuses of the wire grids of the second ring segment; u22 ═ i × n22, and n22 denotes the remaining number of fused wire grids of the second rectangular segment.
9. The metal sputtered thin film pressure sensitive chip based sensor of claim 7, wherein the pressure difference for three consecutive sections, such as the first region, the second region, and the third region, is determined by:
U1-2-3＝(U1+U2+U3)×Y123 (3)
in the above equation, U1 represents the first partial pressure detection value, U2 represents the second partial pressure detection value, U3 represents the third partial pressure detection value, Y123 represents the two-part detection partial coefficient, and is set to 0.996, wherein,
U1＝(a×U11+b×U21)×Z1×Y1
U2＝(a2×U12+b2×U22)×Z2×Y2
U3＝(a3×U13+b3×U23)×Z3×Y3。
10. the sputtered metal thin film pressure sensitive chip based sensor of claim 9, wherein U3 ═ a3 × U13+ b3 × U23) × Z3 × Y3, U13 indicates the pressure difference generated by the third arc segment, U23 indicates the pressure difference generated by the third rectangle, where U13 ═ i × n13, and n13 indicates the remaining amount of melted metal wire grids of the third ring segment; u23 ═ i × n23, and n23 denotes the remaining number of fused wire grids of the third rectangular segment.
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| CN2738224Y (en) * | 2004-09-27 | 2005-11-02 | 厦门大学 | Capacitance pressure sensor for vacuum measurement |
| CN101566514A (en) * | 2009-06-02 | 2009-10-28 | 中国航天科技集团公司第四研究院第四十四研究所 | Integrated temperature thin film pressure sensor |
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Denomination of invention: A sensor based on metal sputtering thin film pressure sensitive chip Effective date of registration: 20211008 Granted publication date: 20210223 Pledgee: China Construction Bank Corporation Liuyang sub branch Pledgor: HUNAN QITAI SENSING TECHNOLOGY Co.,Ltd. Registration number: Y2021430000058 |