CN111739946A - Homotype heterostructure IMPATT diode and manufacturing method thereof - Google Patents
Homotype heterostructure IMPATT diode and manufacturing method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 claims abstract description 35
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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Abstract
The invention discloses an IMPATT diode with a homotype heterostructure and a manufacturing method thereof, wherein the IMPATT diode comprises an n-type GaN substrate, an n + + -GaN cathode ohmic contact layer, an n-GaN drift region, an n + -GaN avalanche region, an n + + -InGaN anode ohmic contact layer and an anode which are sequentially arranged from bottom to top; the passivation layer is positioned outside the anode, and the cathode is positioned on the annular table top formed by the n + + -GaN cathode ohmic contact layer 2 and is positioned outside the passivation layer; compared with the traditional GaN-based IMPATT diode, the high-conversion efficiency high-efficiency IMPATT diode has the advantages that the heterogeneous material of the same type is adopted, the limitation of a P-type GaN doping process is avoided, the efficiency of the IMPATT diode is linearly increased along with the increase of the doping concentration of an InGaN material, and the high conversion efficiency is realized; the semiconductor material which is the same as n-type is adopted, namely, the semiconductor material is doped in n-type, the efficiency is improved in the manufacturing process, the manufacturing cost is reduced, and the packaging process is completely compatible with the traditional IMPATT diode packaging process.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and relates to a homotype heterostructure IMPATT diode and a manufacturing method thereof.
Background
IMPATT devices of various configurations are widely used as the primary radiation source over a wide frequency range (1-400 GHz). The maximum output power of an IMPATT diode at a given frequency is strongly related to the material properties of the material used. Compared with the traditional semiconductor materials (Si and GaAs), the GaN has excellent performance in the aspects of frequency and output power, and the GaN-based IMPATT diode has wide application prospect in the terahertz field (100 GHz-10 THz).
The P-type doping concentration of the PN junction in the design of the GaN-based IMPATT device with the traditional structure has great influence on the working performance. P-type GaN is difficult to form a high-quality P-type ohmic contact because of the immaturity of process fabrication techniques. Firstly, the forbidden bandwidth of the GaN material is too large, 3.4eV, the typical value of the metal work function available in the current process is generally about 4 to 5eV, and it is difficult to form a low metal-P type GaN barrier height difference. Second, the conventional GaN-based IMPATT diode n + + -InGThe aN anode ohmic contact layer is made of GaN, the doping process of the P-type GaN material is limited, the high doping concentration of the P region of the GaN-based IMPATT diode is difficult to obtain, the series resistance of the diode is more obvious, and the P-type GaN ohmic contact resistance can only be controlled to be 10-4～10-5Omega cm2, resulting in a significant limitation in the performance of conventional structure GaN-based IMPATT diodes. On the premise of forming ohmic contact, the direct current-alternating current conversion efficiency base of the GaN-based IMPATT and the P-type concentration are basically in linear proportional relation with the increase of the doping concentration of the P-type region. When the concentration is higher than a certain value, the direct current-alternating current conversion efficiency of the device can reach a certain saturation value, and the IMPATT avalanche process generates electron-hole pair saturation due to the limitation of doping concentration, so that the output efficiency of IMPATT is influenced.
If the Schottky junction is adopted, on one hand, the series resistance effect of the PN junction of the GaN-based IMPATT can be eliminated really, the efficiency is improved, on the other hand, the P-type doping problem is avoided, but the Schottky diode has the defects of high current, overhigh using environment temperature and mismatched voltage drop with the requirements of a circuit, so that the reverse leakage is large, the working performance of the IMPATT is influenced, and the ideal conversion efficiency performance cannot be obtained.
Disclosure of Invention
In view of the above problems in the prior art, an object of the present invention is to provide a homotypic heterostructure IMPATT diode and a method for manufacturing the same, which has the advantages of high conversion efficiency, simple manufacturing process and low manufacturing cost.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
an IMPATT diode with a homotype heterostructure comprises an n-type GaN substrate, an n + + -GaN cathode ohmic contact layer, an n-GaN drift region, an n + -GaN avalanche region, an n + + -InGaN anode ohmic contact layer and an anode which are sequentially arranged from bottom to top;
the passivation layer is positioned outside the anode, and the cathode is positioned on the annular mesa formed by the n + + -GaN cathode ohmic contact layer 2 and outside the passivation layer.
Furthermore, the n + + -GaN cathode ohmic contact layer is made of n + + -GaN, the thickness of the n + + -GaN cathode ohmic contact layer is 1-2 microns, and the doping concentration of the n + + -GaN cathode ohmic contact layer is 0.05 × 1018～1×1020cm-3The lower end of the base is provided with an etched annular table top with the thickness of 10-100 nm3。
Furthermore, the n-GaN drift region is made of n-GaN, the thickness of the n-GaN drift region is 0.5-5 mu m, and the doping concentration of the n-GaN drift region is 0.1-1 × 1017cm-3。
Further, the n + -GaN avalanche region is made of n + -GaN, the thickness of the n + -GaN avalanche region is 0.1-2 mu m, and the doping concentration of the n + -GaN avalanche region is 0.1-5 × 1018cm-3。
Furthermore, the n + + -InGaN anode ohmic contact layer material is n + + -InGaN, the thickness is 10-100 nm, the In component is more than 15%, and the doping concentration is 0.05-1 × 1020cm-3。
Further, the anode comprises Ti, Al, Ni and Au metal layers, and the total thickness is 100 nm-200 nm.
Furthermore, the cathode comprises Ti, Al, Ni and Au metal layers, and the total thickness is 100 nm-200 nm.
Further, the passivation layer is made of SiN, the relative dielectric constant range is 10-200, and the thickness of the passivation layer is the sum of the thicknesses of the n + + -GaN cathode ohmic contact layer, the n-GaN drift region, the n + -GaN avalanche region, the n + + -InGaN anode ohmic contact layer and the anode.
A method of preparing a homoheterostructure IMPATT diode according to claim 1, comprising the steps of:
s1, selecting a SiC substrate slice as an initial material to form an n-type GaN substrate;
s2, epitaxially growing an n + + -GaN cathode ohmic contact layer on the n-type GaN substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method;
s3, epitaxially growing an n-GaN drift region on the n + + -GaN cathode ohmic contact layer by using an MOCVD method;
s4, epitaxially growing an n + -GaN avalanche region on the n-GaN drift region by using an MOCVD method;
s5, epitaxially growing an n + + -InGaN anode ohmic contact layer on the n + -GaN avalanche region by using an MOCVD method;
s6, etching the n + + -GaN cathode ohmic contact layer, the n-GaN drift region, the n + -GaN avalanche region and the n + + -InGaN anode ohmic contact layer by adopting an etching technology, so as to form an annular mesa on the upper surface of the n-type GaN substrate;
s7, depositing Ti, Al, Ni and Au multilayer metal on the upper surface of the n + + -InGaN anode ohmic contact layer, and forming an anode by adopting a metal stripping technology;
s8, depositing a SiN passivation layer on the front surface of the n + + -GaN cathode ohmic contact layer by using radio frequency magnetron sputtering equipment;
s9, depositing Ti, Al, Ni and Au multilayer metals on the annular table top of the n + + -GaN cathode ohmic contact layer, and forming a cathode by adopting a metal stripping technology; and carrying out rapid thermal annealing treatment to form ohmic contact between the n + + -GaN cathode ohmic contact layer and the n-type GaN substrate and between the n + + -InGaN anode ohmic contact layer and the anode.
Compared with the prior art, the invention has the beneficial effects that:
1. the diode provided by the invention adopts the same-type heterogeneous material, the n + + -InGaN anode ohmic contact layer is made of n + + -InGaN, so that compared with the traditional GaN-based IMPATT diode, the diode avoids the limitation of a P-type GaN doping process and is not limited by the GaN process any more, the thickness of the n + + -InGaN anode ohmic contact layer is 1-2 mu m, and the doping concentration is 1-5 × 1019cm-3The In component ratio is more than 15%, and the efficiency of the IMPATT diode is linearly increased along with the increase of the doping concentration of the InGaN material, so that high conversion efficiency is realized.
In the invention, the forbidden band width of InN is 0.7eV, and In is adjustedxGa1-xThe In component (> 15%) of the N-ternary alloy can make the forbidden band width of IMPATT diode anode material continuously adjustable from 0.7eV (InN) to 3.4eV (GaN). Based on the InGaN/GaN homotype heterojunction IMPATT diode, according to the energy band theory, because the Fermi energy level of the wide bandgap material GaN (Eg 3.4) is higher than that of the narrow bandgap material GaN (Eg 3.4 is 0.7 < Eg < 3.4), electrons flow from the N-type GaN to the N-type InGaN, so that the energy band of the N-type GaN material interface is bent upwards, and the energy band of the N-type InGaN with the narrow bandgap width close to the interface is bent downwards (in the physical study of the heterojunction, the wide bandgap material is marked as capital letter N or P, and the narrow bandgap material is marked as small letter N or P). For n-type halvesThe conductor has the energy band bent downwards to form an accumulation layer of electrons and the energy band bent upwards to form a depletion layer of the electrons, so that the InGaN/GaN material used by the N-N homotype heterojunction provided by the invention can bend the energy band at a heterojunction interface to form a potential barrier as the conventional N-P type heterojunction, can generate an avalanche process and a drift process of an IMPATT diode while realizing a highly doped ohmic contact layer, and has high conversion efficiency because the electron-hole pairs generated in the collision ionization process are increased along with the increase of the doping concentration. On the other hand, the invention does not need to use a Schottky junction, avoids an overhigh reverse leakage current effect when the metal-n is contacted, and ensures high conversion efficiency.
2. The IMPATT diode provided by the invention adopts the semiconductor materials which are both n-type, namely, the semiconductor materials are all n-type doped, on one hand, the efficiency is improved on the aspect of the manufacturing process of the IMPATT diode, the manufacturing cost is reduced, and meanwhile, the IMPATT diode packaging process is completely compatible with the traditional IMPATT diode packaging process, is very suitable for installing and debugging the terahertz component in the radio frequency resonant cavity, can well meet the requirements of practical application, and is more beneficial to the terahertz field of device work.
3. The IMPATT diode provided by the invention has higher two-dimensional electron gas density due to the polarization effect of N-InGaN and N-GaN nitride in material characteristics, so that the number of initial carriers in an N + -GaN avalanche region in the N-N homotype heterojunction IMPATT diode is increased, the external output current of the IMPATT diode is also increased, the electron mobility of InN and GaN is higher, the recombination of carriers in the N-N homotype heterojunction IMPATT diode is favorably reduced, the radiation resistance of InGaN with low components is stronger than that of SI and GaAs, and the power output capability of the N-N homotype heterojunction IMPATT diode is increased.
Drawings
FIG. 1 is a schematic cross-sectional view of a die of a homotype heterojunction IMPATT diode of the present invention;
FIG. 2 is a schematic flow chart of a method for manufacturing an InGaN/GaN homotype heterojunction IMPATT diode provided by the present invention;
FIG. 3 is a schematic process flow diagram of the manufacturing method of the InGaN/GaN homotype heterojunction IMPATT diode provided by the present invention;
in the figure: the GaN-based solar cell comprises a 1-n type GaN substrate, a 2-n + + -GaN cathode ohmic contact layer, a 3-n-GaN drift region, a 4-n + -GaN avalanche region, a 5-n + + -InGaN anode ohmic contact layer, a 6-anode, a 7-passivation layer and an 8-cathode.
Detailed Description
The present invention will be described in further detail with reference to the following examples, which are not intended to limit the invention thereto.
As shown in FIG. 1, the homoheterostructure IMPATT diode of the present invention comprises an n-type GaN substrate 1, an n + + -GaN cathode ohmic contact layer 2, an n-GaN drift region 3, an n + -GaN avalanche region 4, an n + + -InGaN anode ohmic contact layer 5 and an anode 6, which are sequentially arranged from bottom to top.
The passivation layer 7 is located outside the anode 6, and the cathode 8 is located on the annular mesa formed by the n + + -GaN cathode ohmic contact layer 2 and outside the passivation layer 7.
Particularly, the n-type GaN substrate 1 is used as a physical support layer of a device structure layer, is perfectly matched with the GaN multilayer structure on the upper layer, so that the crystallization quality is obviously improved, and also plays a role in heat dissipation so as to avoid introducing a self-heating effect, the n + + -GaN cathode ohmic contact layer 2 is made of n + + -GaN, the thickness is 1-2 mu m, and the doping concentration is 0.05 × 1018～1×1020cm-3The lower end of the base is provided with an etched annular table top with the thickness of 10-100 nm3。
The n-GaN drift region 3 is made of n-GaN, the thickness of the n-GaN drift region is 0.5-5 mu m, and the doping concentration is 0.1-1 × 1017cm-3。
Specifically, the n + -GaN avalanche region 4 is made of n + -GaN, the thickness is 0.1-2 μm, and the doping concentration is 0.1-5 × 1018cm-3。
Particularly, the n + + -InGaN anode ohmic contact layer 5 is made of n + + -InGaN, the thickness is 10-100 nm, the In component is more than 15%, and the doping concentration is 0.05-1 × 1020cm-3。
Specifically, the anode 6 is made of Ti/Al/Ni/Au multilayer metal, and the total thickness is 100 nm-200 nm.
Furthermore, the cathode 8 is made of Ti/Al/Ni/Au multilayer metal, and the total thickness is 100 nm-200 nm.
Particularly, the passivation layer 7 is made of SiN, has a relative dielectric constant ranging from 10 to 200, and is the sum of the thicknesses of the n + + -GaN cathode ohmic contact layer 2, the n-GaN drift region 3, the n + -GaN avalanche region 4, the n + + -InGaN anode ohmic contact layer 5 and the anode 6.
As shown in fig. 2 and fig. 3, the method for manufacturing an IMPATT diode with a homotype heterostructure provided in the present invention includes the following steps:
s1, selecting a SiC substrate slice as an initial material to form an n-type GaN substrate 1;
s2, epitaxially growing an n + + -GaN cathode ohmic contact layer 2 on the n-type GaN substrate 1 by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method;
s3, epitaxially growing an n-GaN drift region 3 on the n + + -GaN cathode ohmic contact layer 2 by using an MOCVD method;
s4, epitaxially growing an n + -GaN avalanche region 4 on the n-GaN drift region 3 by using an MOCVD method;
s5, epitaxially growing an n + + -InGaN anode ohmic contact layer 5 on the n + -GaN avalanche region 4 by using an MOCVD method;
s6, etching the n + + -GaN cathode ohmic contact layer 2, the n + -GaN avalanche region 4, the n-GaN drift region 3 and the n + + -InGaN anode ohmic contact layer 5 by adopting an etching technology, so as to form an annular mesa on the upper surface of the n-type GaN substrate 1;
s7, depositing Ti/Al/Ni/Au multilayer metal on the upper surface of the n + + -InGaN anode ohmic contact layer 5, and forming an anode 6 on the upper surface by adopting a metal stripping technology;
s8, depositing a SiN passivation layer 7 on the front surface of the radio frequency magnetron sputtering equipment;
s9, depositing Ti/Al/Ni/Au multilayer metal on the annular table top of the n + + -GaN cathode ohmic contact layer 2, and forming a cathode 8 by adopting a metal stripping technology; and carrying out rapid thermal annealing treatment to form ohmic contact between the n + + -GaN cathode ohmic contact layer 2 and the n-type GaN substrate 1 and between the n + + -InGaN anode ohmic contact layer 5 and the anode 6.
As shown in fig. 3, a method for manufacturing a homotype heterostructure IMPATT diode includes the following steps:
specifically, a 4H — SiC insulating substrate wafer having a diameter of 2 inches was selected, and the back surface thereof was thinned to GaN having a thickness of 200 μm, to form an n-type GaN substrate 1.
Respectively taking high-purity nitrogen as nitrogen sources, taking silane as an n-type doping source, raising the temperature to 1050 ℃, and epitaxially growing n + + -GaN with the thickness of 1-2 microns on the upper layer of the n-type GaN substrate 1 by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method under the condition that the pressure is 40Torr to form an n + + -GaN cathode ohmic contact layer 2 with the doping concentration of 0.05 × 1018～1×1020cm-3。
Respectively taking high-purity nitrogen as nitrogen sources, taking silane as an n-type doping source, raising the temperature to 1050 ℃, and epitaxially growing n-GaN with the thickness of 0.5-5 mu m on the upper layer of the n + + -GaN cathode ohmic contact layer 2 by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method under the condition that the pressure is 40Torr to form an n-GaN drift region 3 with the doping concentration of 0.1-1 × 1017cm-3。
Respectively taking high-purity nitrogen as nitrogen sources, taking silane as an n-type doping source, raising the temperature to 1050 ℃, and epitaxially growing n + -GaN with the thickness of 0.1-2 mu m on the upper layer of the n-GaN drift region 3 by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method under the condition that the pressure is 40Torr to form an n + -GaN avalanche region 4 with the doping concentration of 0.1-5 × 1018cm-3。
Setting the temperature of a reaction chamber at 800-1200 ℃, introducing trimethylaluminum (TMIn) and ammonia (NH3) into the reaction chamber, growing a layer of InN under the condition that H2 is used as a carrier gas, growing a layer of n + + -AlGaN with the thickness of 1-2 mu m on the InN through the epitaxial growth of the upper layer of the n + -GaN avalanche region 4 under the same condition and through the trimethylaluminum (TMIn), trimethylgallium (TMGa) and ammonia (NH3), forming an n + + -InGaN anode ohmic contact layer 5, wherein the In component is more than 15%, and the doping concentration is 0.05-1 × 1020cm-3。
Photoetching and forming a circular mask pattern with the diameter of 80-100 mu m on the n + + -GaN cathode ohmic contact layer 2, the n + GaNn-GaN drift region 3, the n + -GaN avalanche region 4 and the n + + -InGaN anode ohmic contact layer 5 in the multilayer structure; etching the structure by adopting a reactive ion RIE etching method and using a BCl3/Cl2 etching gas source, and forming an annular table top on the n + + -GaN cathode ohmic contact layer 2, wherein the thickness of the table top is 50 nm-150 nm;
and then sequentially evaporating Ti/Al/Ni/Au multilayer metals by adopting a vacuum electron beam evaporation device on a step-shaped annular table top formed by the n + + -InGaN anode ohmic contact layer 5, wherein the thicknesses are respectively as follows: 20nm, 80nm, 50nm and 50nm, and then the anode 6 in a ring shape is formed by metal stripping.
And sputtering SiN with the thickness of 570nm and the width of 15nm by using radio frequency magnetron sputtering equipment to form a passivation layer 7. The process conditions are as follows: the radio frequency power is 100W, the target distance is 20cm, when the air pressure of the reaction cavity is 0.4Pa, argon and oxygen are introduced, and the flow ratio of the nitrogen is 20%.
And then sequentially evaporating Ti/Al/Ni/Au multilayer metals on the bottom surface of the n-type GaN substrate 1 by adopting vacuum electron beam evaporation equipment, wherein the thicknesses are respectively as follows: 20nm, 80nm, 50nm and 50nm, and then the annular cathode 8 is formed by metal stripping.
And carrying out rapid thermal annealing on the whole device, wherein the annealing condition is 750 ℃, the annealing time is 3min, and the annealing gas is nitrogen to form ohmic contact.
The cross section of the diode die finally formed through the main process steps is shown in fig. 1.
The present invention is described in detail with reference to the above embodiments, and those skilled in the art will understand that: modifications and equivalents may be made to the embodiments of the invention without departing from the spirit and scope of the invention, which is to be covered by the claims.
Claims (9)
1. A homomorphic heterostructure IMPATT diode, characterized in that: the GaN-based high-performance high-power-efficiency high-power-consumption high-power-efficiency high;
the passivation layer (7) is positioned outside the anode (6), and the cathode (8) is positioned on the annular table top formed by the n + + -GaN cathode ohmic contact layer 2 and outside the passivation layer (7).
2. The IMPATT diode with homotype heterostructure according to claim 1, wherein the n + + -GaN cathode ohmic contact layer (2) is made of n + + -GaN, has a thickness of 1-2 μm and a doping concentration of 0.05 × 1018～1×1020cm-3The lower end of the base is provided with an etched annular table top with the thickness of 10-100 nm3。
3. The IMPATT diode with homotype heterostructure according to claim 1, wherein the n-GaN drift region (3) is made of n-GaN, the thickness is 0.5-5 μm, and the doping concentration is 0.1-1 × 1017cm-3。
4. The IMPATT diode with homotype heterostructure as claimed in claim 1, wherein the n + -GaN avalanche region (4) is made of n + -GaN, has a thickness of 0.1-2 μm and a doping concentration of 0.1-5 × 1018cm-3。
5. The IMPATT diode with homotype heterostructure according to claim 1, wherein the n + + -InGaN anode ohmic contact layer (5) is n + + -InGaN with a thickness of 10-100 nm, an In component of 15% or more, and a doping concentration of 0.05-1 × 1020cm-3。
6. An homoheterostructure IMPATT diode according to claim 1, wherein: the anode (6) comprises Ti, Al, Ni and Au metal layers, and the total thickness is 100 nm-200 nm.
7. An homoheterostructure IMPATT diode according to claim 1, wherein: the cathode (8) comprises Ti, Al, Ni and Au metal layers, and the total thickness is 100 nm-200 nm.
8. An homoheterostructure IMPATT diode according to claim 1, wherein: the passivation layer (7) is made of SiN, the relative dielectric constant range is 10-200, and the thickness of the passivation layer is the sum of the thicknesses of the n + + -GaN cathode ohmic contact layer (2), the n-GaN drift region (3), the n + -GaN avalanche region (4), the n + + -InGaN anode ohmic contact layer (5) and the anode (6).
9. A method for preparing homoheterostructure IMPATT diodes according to claim 1, characterized in that it comprises the following steps:
s1, selecting a SiC substrate slice as an initial material to form an n-type GaN substrate (1);
s2, epitaxially growing an n + + -GaN cathode ohmic contact layer (2) on the n-type GaN substrate (1) by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method;
s3, epitaxially growing an n-GaN drift region (3) on the n + + -GaN cathode ohmic contact layer (2) by using an MOCVD method;
s4, epitaxially growing an n + -GaN avalanche region (4) on the n-GaN drift region (3) by using an MOCVD method;
s5, epitaxially growing an n + + -InGaN anode ohmic contact layer (5) on the n + -GaN avalanche region (4) by using an MOCVD method;
s6, etching the n + + -GaN cathode ohmic contact layer (2), the n-GaN drift region (3), the n + -GaN avalanche region (4) and the n + + -InGaN anode ohmic contact layer (5) by adopting an etching technology, so as to form an annular mesa on the upper surface of the n-type GaN substrate (1);
s7, depositing Ti, Al, Ni and Au multilayer metal on the upper surface of the n + + -InGaN anode ohmic contact layer (5), and forming an anode (6) by adopting a metal stripping technology;
s8, depositing and forming a SiN passivation layer (7) on the front surface of the n + + -GaN cathode ohmic contact layer (2) by using radio frequency magnetron sputtering equipment;
s9, depositing Ti, Al, Ni and Au multilayer metal on the annular table top of the n + + -GaN cathode ohmic contact layer (2), and forming a cathode (8) by adopting a metal stripping technology; and carrying out rapid thermal annealing treatment to form ohmic contact between the n + + -GaN cathode ohmic contact layer (2) and the n-type GaN substrate (1) and between the n + + -InGaN anode ohmic contact layer (5) and the anode (6).
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