CN111737935B - Power device failure rate assessment method, computer equipment and storage medium - Google Patents
Power device failure rate assessment method, computer equipment and storage medium Download PDFInfo
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Abstract
The application relates to a failure rate evaluation method of a power device, computer equipment and a storage medium. The failure rate evaluation method of the power device comprises the following steps: acquiring threshold energy of heavy ions; simulating the process that heavy ions with deposition energy larger than or equal to threshold energy are incident to the power device to be detected, and determining a sensitive area of the power device; simulating the process that the radiation particles are incident to the power device to be detected to generate secondary heavy ions, and acquiring deposition energy of the secondary heavy ions generated by the radiation particles and entering a sensitive area; acquiring the number of single-particle burning events of the power device to be detected according to the relation between the deposition energy of the secondary heavy ions entering the sensitive area and the threshold energy; and according to the times of single-particle burning events, evaluating the failure rate condition of the power device to be tested caused by the radiation particles. The application can effectively reduce the test cost.
Description
Technical Field
The present application relates to the field of electronic technologies, and in particular, to a method for evaluating failure rate of a power device, a computer device, and a storage medium.
Background
The phenomenon of failure rate of power devices caused by radiation particles is of great concern. However, most of the currently focused radiation particles are space charged heavy ions, and the failure rate of the power device caused by radiation particles (such as atmospheric neutrons) generating secondary heavy ions through indirect ionization is not high. The failure rate of the power device caused by the radiation particles is generally evaluated by adopting a failure rate evaluation method based on an irradiation test.
However, the single event effect of radiation particles causing failure rates is a destructive effect. Therefore, conventional methods for evaluating failure rate of power devices caused by radiation particles that generate secondary heavy ions by indirect ionization require a large amount of sample to obtain statistical results, and have high test cost.
Disclosure of Invention
In view of the foregoing, it is desirable to provide a failure rate evaluation method for a power device, a computer device, and a storage medium that can reduce evaluation costs.
A power device failure rate assessment method for assessing a condition in which radiation particles that can generate secondary heavy ions by indirect ionization cause failure rate of a power device, the method comprising:
acquiring threshold energy of the heavy ions, wherein the threshold energy is minimum deposition energy of the heavy ions required for causing single particle burning of a power device to be detected, and the power device to be detected is in an off state and under a preset bias voltage;
simulating the process that the heavy ions with the deposition energy being greater than or equal to the threshold energy are incident to the power device to be detected, and determining a sensitive area of the power device;
simulating the process that the radiation particles are incident to the power device to be detected to generate secondary heavy ions, and acquiring deposition energy of the secondary heavy ions generated by the radiation particles and entering the sensitive area;
acquiring the number of single event burnout events of the power device to be detected according to the relation between the deposition energy of the secondary heavy ions entering the sensitive area and the threshold energy;
and evaluating the failure rate condition of the power device to be tested caused by the radiation particles according to the times of the single particle burning events.
In one embodiment, the acquiring the threshold energy of the heavy ions comprises:
acquiring the minimum bias voltage of the power device in the off state, wherein the minimum bias voltage is generated by single particle burnout under the irradiation of heavy ions with different linear energy transfer values;
converting a relationship between the linear energy transfer value of the heavy ions and the minimum bias voltage into a relationship between the deposition energy of the heavy ions and the minimum bias voltage;
and acquiring the threshold energy of the acquired heavy ions according to the relation between the precipitation energy of the heavy ions and the minimum bias voltage.
In one embodiment, the step of determining the sensitive area of the power device includes:
acquiring device information of the power device;
constructing a first simulation model according to the device information;
dividing a simulation structure of the power device in the first simulation model into a plurality of simulation areas;
simulating a process of injecting the heavy ions with the deposition energy larger than or equal to the threshold energy into the simulation area of the power device to be tested based on the first simulation model;
judging whether each simulation area is burned by a single particle;
judging whether each simulation area is a sensitive area according to whether single particle burning occurs or not.
In one embodiment, the first simulation model is a three-dimensional process computer aided design simulation model.
In one embodiment, simulating the process of generating the heavy ions by the radiation particles incident on the power device to be detected, and obtaining the deposition energy of the heavy ions generated by the radiation particles and entering the sensitive area includes:
acquiring device information of the power device;
constructing a second simulation model according to the device information;
defining a corresponding region of the sensitive region in a simulation structure of the power device in the second simulation model;
simulating a process of generating a nuclear reaction process and a process of generating a nuclear reaction secondary particle by simulating the radiation particle to be incident to the power device to be tested based on the second simulation model;
deposition energy of the nuclear reaction secondary particles entering the sensitive area is acquired.
In one embodiment, the second simulation model is a Monte Carlo simulation model.
In one embodiment, the evaluating the failure rate of the power device to be tested caused by the radiation particle according to the number of the single-particle burnout events includes:
calculating the section of the single event according to the times of the single event;
and acquiring the failure rate of the power device caused by the radiation particles according to the single particle burnout event section and the atmospheric neutron flux.
In one embodiment, the radiation particle is a neutron or proton.
A computer device comprising a memory storing a computer program and a processor implementing the steps of the method described above when the processor executes the computer program.
A computer readable storage medium having stored thereon a computer program which, when executed by a processor, performs the steps of the method described above.
According to the power device failure rate assessment method, the computer equipment and the storage medium, the process of generating secondary heavy ions by simulating the incidence of radiation particles to the power device and the process of incidence of heavy ions to the power device are simulated, so that an actual irradiation experiment can be replaced by a simulation experiment, and the test cost can be effectively reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments or the conventional techniques of the present application, the drawings required for the descriptions of the embodiments or the conventional techniques will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to the drawings without inventive effort for those skilled in the art.
FIG. 1 is a flow chart of a method for evaluating failure rate of a power device in one embodiment;
FIG. 2 is a flow diagram of acquiring threshold energy of heavy ions in one embodiment;
FIG. 3 is a flow diagram of determining a sensitive area of a power device in one embodiment;
FIG. 4 is a flow chart of another embodiment for acquiring deposition energy of secondary heavy ions generated by radiation particles entering a sensitive region;
fig. 5 is a flow chart of evaluating failure rate of a power device to be tested caused by radiation particles in one embodiment.
Detailed Description
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. Embodiments of the application are illustrated in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," and/or the like, specify the presence of stated features, integers, steps, operations, elements, components, or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or groups thereof.
Since the nineties of the twentieth century, attention has been paid to power device failure due to ground radiation (atmospheric neutrons). The H.Kabza et al applied reverse bias to the power device in a ground laboratory for long-term test, found that 6 failures occurred within 700 device hours; continuing the previous test in the underground salt mine at the depth of 140m, wherein no failure is found due to the shielding of atmospheric neutrons in the underground mine; continuing to return to the ground test, and returning the fault rate of the power device to the level of the previous ground; and finally, transferring the test points to a basement of a multi-story building (the concrete is separated from the ground by 2.5m, and the concrete has a shielding effect on atmospheric neutrons), and the failure rate is reduced again. These results demonstrate that atmospheric neutrons are a major cause of power semiconductor device failure.
The method for evaluating the failure rate of the power device can be used for evaluating the failure rate of the power device caused by atmospheric neutrons. Of course, the application is not limited in this regard and can also be used to evaluate other radiation particles (e.g., protons) that can generate secondary heavy ions by indirect ionization.
For simplicity of description, the following embodiments will simply refer to radiation particles (e.g., neutrons or protons, etc.) that can generate secondary heavy ions by indirect ionization as "radiation particles". That is, the "radiation particles" appearing in the following embodiments all represent radiation particles (e.g., neutrons or protons, etc.) that can generate secondary heavy ions by indirect ionization.
In one embodiment, as shown in fig. 1, a method for evaluating failure rate of a power device is provided, including:
step S1, acquiring the threshold energy of heavy ions.
Power devices typically fail in the off state. And when the power device is in an off state, the failure rate of the power device is different under different bias voltages. Therefore, the power device in the off state and under the preset bias voltage can be used as the power device to be tested. The "to-be-detected state" is a state in which the power device is in an off state and under a preset bias voltage. The "preset bias voltage" may be set according to actual conditions.
The "threshold energy" is the minimum deposition energy of heavy ions required to cause single event burn out (SEB) of the power device to be tested. I.e., the "threshold energy" is the minimum deposition energy of heavy ions required to cause single event burn out of the power device in the off state and at a preset bias voltage.
And S2, simulating a process that heavy ions with deposition energy larger than or equal to threshold energy are incident to the power device to be detected, and determining a sensitive area of the power device.
The power device has a sensitive region and a non-sensitive region. When the heavy ions cause single-particle burning event of the power device to be detected, the deposition energy of the power device to be detected needs to be larger than or equal to the threshold energy, and meanwhile, the power device to be detected needs to be incident to a sensitive area sensitive to the heavy ions. Only the heavy ions are incident to the sensitive area, the single-particle burning event of the power device to be tested can be triggered.
The step can determine which positions have single event and which positions have no single event by simulating the process that heavy ions with deposition energy larger than or equal to threshold energy are incident to the power device to be tested. Thus, through the simulation of this step, the sensitive area of the power device can be determined by whether a single event burn out event has occurred.
And S3, simulating a process that the radiation particles are incident to the power device to be detected to generate secondary heavy ions, and acquiring deposition energy of the secondary heavy ions generated by the radiation particles and entering the sensitive area.
The radiation particles incident on the power device may undergo indirect ionization (e.g., nuclear reaction) to produce secondary heavy ions. The process of generating heavy ions by the radiation particles entering the power device to be detected is simulated, and the deposition energy of the heavy ions generated by the radiation particles and entering the sensitive area can be obtained.
And S4, acquiring the times of single event burning of the power device to be detected according to the relation between the deposition energy of the secondary heavy ions entering the sensitive area and the threshold energy.
According to the relationship between the deposition energy of the secondary heavy ions entering the sensitive area and the threshold energy obtained in the step S3, it may be further determined that a single event of burning occurs when the deposition energy of the secondary heavy ions entering the sensitive area is greater than or equal to the threshold energy.
Therefore, the number of single-particle burning events of the power device to be detected can be obtained by counting the number of times that the deposition energy of the secondary heavy ions entering the sensitive area is greater than or equal to the threshold energy.
And S5, evaluating the failure rate condition of the power device to be tested caused by the radiation particles according to the times of the single particle burning events.
The more times of single event burn out, the more serious the radiation particle causes the failure of the power device to be tested. Therefore, the failure condition of the power device to be tested caused by the radiation particles can be effectively evaluated according to the times of the single-particle burning events. The failure rate of the power device in the off state caused by the radiation particles under the preset bias voltage can be effectively estimated according to the times of the single particle burning events.
The preset bias voltage is replaced, the process is repeated, and the failure rate condition of the power device in the off state under different preset bias voltages can be obtained.
According to the embodiment, the process of generating secondary heavy ions by simulating the incidence of the radiation particles to the power device and the process of generating the secondary heavy ions by simulating the incidence of the heavy ions to the power device are simulated, so that the simulation experiment can be used for replacing the actual irradiation experiment, and the test cost can be effectively reduced.
In one embodiment, as shown in fig. 2, step S1 (acquiring the threshold energy of the heavy ions) includes:
and S11, acquiring the minimum bias voltage of the power device in the off state, wherein the minimum bias voltage is generated by single particle burnout under the irradiation of heavy ions with different linear energy transfer values.
The power device of the present application may be a metal-oxide-semiconductor field effect transistor (MOSFET), a power Diode (Diode), an Insulated Gate Bipolar Transistor (IGBT), or the like. The bias voltage is the electrode voltage of the power device.
The power device will be described herein as an example of a metal-oxide-semiconductor field effect transistor. At this time, when the power device is in the off state, the gate and the drain can be grounded, and the drain is connected to the drain voltage. The minimum bias voltage is the minimum drain voltage.
Linear Energy Transfer (LET) is used to describe the energy lost by ionization per unit distance charged particles (e.g., heavy ions) incident into a material, typically in MeV cm 2 /mg。
Before failure rate evaluation, heavy ions with a certain LET value can be used for entering a power device MOFET in an off state, so that the minimum drain bias voltage which correspondingly causes the power device to generate SEB is obtained, and the minimum bias voltage of the power device to generate SEB can be obtained. The relationship between the LET value of the heavy ions and the SEB minimum bias voltage can be obtained by using the heavy ion incidence power devices with different LET values to obtain a curve of the SEB minimum bias voltage of the power device with the LET value of the heavy ions as an abscissa and the SEB minimum bias voltage as an ordinate along with the variation of the LET value of the heavy ions.
And in the failure rate evaluation, the curve of the variation of the SEB minimum bias voltage along with the LET value of heavy ions can be obtained by searching the heavy ion irradiation history data of the device. Alternatively, when there is no history, then a heavy ion irradiation test needs to be performed to obtain the curve.
Step S12, the relation between the linear energy transfer value of the heavy ions and the minimum bias voltage is converted into the relation between the deposition energy of the heavy ions and the minimum bias voltage.
The step is to obtain the minimum bias voltage of the power device in the off state, which is burnt by single particles under the irradiation of heavy ions with different linear energy transfer values, so that the relation between the linear energy transfer value of the heavy ions and the minimum bias voltage can be obtained.
And the LET value of the heavy ion and the precipitation energy (E deposit ) Has the following relationship:
E deposit ＝LET×d×ρ
wherein d is the thickness of an epitaxial layer of the power device, and ρ is the material density of an active region of the power device. Thus, the relationship between the LET value of the heavy ion and the SET minimum bias voltage can be converted into a relationship between the deposition energy of the heavy ion and the SET minimum bias voltage.
Step S13, obtaining the threshold energy of the heavy ions according to the relation between the precipitation energy of the heavy ions and the minimum bias voltage.
The relationship between the LET value of the heavy ion and the SET minimum bias voltage is converted into a relationship between the deposition energy of the heavy ion and the SET minimum bias voltage through step S12. I.e., the curve of the SEB minimum bias voltage as a function of the LET value of the heavy ion can be converted into a curve of the SEB minimum bias voltage as a function of the deposition energy of the heavy ion.
The physical meaning of the point on the curve is the minimum bias voltage required when SEB occurs in the power device when the corresponding heavy ion has certain deposition energy; it is also understood that the minimum deposition energy of heavy ions required when the power device is at a certain bias voltage when the power device is SEB occurs. Thus, the minimum deposition energy of heavy ions required for causing single particle burnout of the power device in the off state and under the preset bias voltage can be obtained, namely, the threshold energy of the heavy ions can be obtained.
In one embodiment, as shown in fig. 3, step S2 (simulating a process of depositing heavy ions with energy greater than or equal to a threshold energy to be incident on the power device to be measured, and determining a sensitive area of the power device) includes:
step S21, device information of the power device is acquired.
The device information of the power device may include device structure, physical dimensions, doping concentration, etc. Device information such as device structure, physical size, doping concentration and the like of the power device can be obtained by carrying out reverse analysis on the power device.
Step S22, a first simulation model is built according to the device information.
The first simulation model may be a three-dimensional process computer aided design (TCAD) simulation model or the like.
Step S23, dividing the simulation structure of the power device in the first simulation model into a plurality of simulation areas.
Since the application is an assessment of the failure of a power device caused by radiation particles that generate secondary heavy ions by indirect ionization. Secondary heavy ions generated by indirect ionization are generated inside the power device, so that the incidence position of the secondary heavy ions is not on the surface of the power device. Therefore, the power device can be divided along the length and thickness directions of the power device, and a plurality of simulation areas are generated.
Step S24, simulating a process of injecting heavy ions with deposition energy greater than or equal to threshold energy into a simulation area of the power device to be tested based on the first simulation model.
At this time, heavy ions with deposition energy greater than or equal to the threshold energy may be selected to sequentially enter each simulation region of the power device. Or when the power device structure is symmetrical, heavy ion incidence can be carried out on only half of the simulation area of the power device, and then whether the half simulation area is a sensitive area or not can be judged. And the other half of the simulation areas can be judged by the sensitive area of the first half of the simulation areas to make corresponding judgment in the corresponding areas due to the symmetrical structure of the power device.
In the simulation process, the power device is in a state to be tested, namely in an off state and under a preset bias voltage. Setting the heavy ion deposition energy to be greater than or equal to the threshold energy can further provide sufficient conditions for SEB to occur in the power device.
Step S25, judging whether single particle burning occurs in each simulation area.
The step can judge whether the single particle burnout occurs in each simulation area according to the simulation result obtained in the step S24.
Specifically, for example, when the power device is a MOSFET, whether the single particle burn-out occurs in each simulation region can be determined according to whether the drain current of the power device is normal or not when heavy ions are incident to each simulation region of the power device.
Step S26, judging whether each simulation area is a sensitive area according to whether single particle burning occurs in each simulation area.
Because the heavy ions only generate SEB in the sensitive area of the power device, whether the heavy ions are sensitive areas can be judged according to whether single particle burning occurs in each simulation area.
In one embodiment, as shown in fig. 4, step S3 (simulating the process of generating heavy ions by the radiation particles entering the power device to be tested, and acquiring the deposition energy of the heavy ions generated by the radiation particles and entering the sensitive area) includes:
step S31, device information of the power device is acquired.
Similar to step S21, device information of the power device may be obtained by using the device reverse analysis data.
And S32, constructing a second simulation model according to the device information.
The second simulation model may be a monte carlo simulation model or the like.
Step S33, defining a corresponding region of the sensitive region in the simulation structure of the power device in the second simulation model.
Step S34, based on the second simulation model, the process of generating nuclear reaction secondary particles and generating nuclear reaction process by simulating the incidence of radiation particles to the power device to be tested is simulated.
When the step simulates the simulation process, the power device is also in a to-be-tested state, namely in an off state and under a preset bias voltage. At this time, the process of nuclear reaction and the process of generating nuclear reaction secondary particles, which are generated by the radiation particles incident to the power device, are simulated. The nuclear reaction secondary particles are secondary heavy ions.
In step S35, the deposition energy of the nuclear reaction secondary particles entering the sensitive area is acquired.
At this time, the deposition energy of the nuclear reaction secondary particles entering the sensitive region may be acquired according to the simulation result obtained in step S34. When the deposition energy of the secondary particles of the nuclear reaction is larger than or equal to the threshold energy, the power device in the sensitive area generates an SEB event, and the SEB event number can be obtained.
In one embodiment, as shown in fig. 5, step S5 (evaluating the failure rate of the power device to be tested due to the radiation particles according to the number of single-particle burn-out events) includes:
step S51, calculating the section of the single particle burning event according to the number of the single particle burning events.
The cross section of the single-particle burning event is the ratio of the number of single-particle burning events Nerror to the number of neutrons per unit area of the device. A is the upper surface area of the power device, and Nneutron is the total number of incident neutrons. Nneutron/A is the neutron count per unit area of the device.
From this, the single event burn event cross section can be calculated by the following formula:
cross-section＝A·N error /N neutron
and S52, acquiring the failure rate of the power device caused by the radiation particles according to the single particle burnout event section and the atmospheric neutron flux.
Failure rate of the power device is the number of single event burnout events in unit time. The atmospheric neutron flux is the number of atmospheric neutrons in unit area of unit time, and the atmospheric neutron flux is multiplied by the section of the single event to obtain the number of single event burning events in unit time.
According to the embodiment, the influence of the radiation particles on the power device can be quantitatively and accurately estimated through the failure rate of the power device caused by the radiation particles.
It should be understood that, although the steps in the flowcharts of fig. 1-5 are shown in order as indicated by the arrows, these steps are not necessarily performed in order as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least a portion of the steps of fig. 1-5 may include multiple steps or stages that are not necessarily performed at the same time, but may be performed at different times, nor does the order in which the steps or stages are performed necessarily occur sequentially, but may be performed alternately or alternately with at least a portion of the steps or stages in other steps or other steps.
In one embodiment, a computer device is provided comprising a memory and a processor, the memory having stored therein a computer program, the processor when executing the computer program performing the steps of:
step S1, acquiring threshold energy of heavy ions, wherein the threshold energy is minimum deposition energy of the heavy ions required for causing single particle burning of a power device to be detected, and the power device to be detected is in an off state and under a preset bias voltage.
And S2, simulating a process that heavy ions with deposition energy larger than or equal to threshold energy are incident to the power device to be detected, and determining a sensitive area of the power device.
And S3, simulating a process that the radiation particles are incident to the power device to be detected to generate secondary heavy ions, and acquiring deposition energy of the secondary heavy ions generated by the radiation particles and entering the sensitive area.
And S4, acquiring the times of single event burning of the power device to be detected according to the relation between the deposition energy of the secondary heavy ions entering the sensitive area and the threshold energy.
And S5, evaluating the failure rate condition of the power device to be tested caused by the radiation particles according to the times of the single particle burning events.
In one embodiment, the processor when executing the computer program further performs the steps of: and S11, acquiring the minimum bias voltage of the power device in the off state, wherein the minimum bias voltage is generated by single particle burnout under the irradiation of heavy ions with different linear energy transfer values. Step S12, the relation between the linear energy transfer value of the heavy ions and the minimum bias voltage is converted into the relation between the deposition energy of the heavy ions and the minimum bias voltage. Step S13, obtaining the threshold energy of the heavy ions according to the relation between the precipitation energy of the heavy ions and the minimum bias voltage.
In one embodiment, the processor when executing the computer program further performs the steps of: step S21, device information of the power device is acquired. Step S22, a first simulation model is built according to the device information. Step S23, dividing the simulation structure of the power device in the first simulation model into a plurality of simulation areas. Step S24, simulating a process of injecting heavy ions with deposition energy greater than or equal to threshold energy into a simulation area of the power device to be tested based on the first simulation model. Step S25, judging whether single particle burning occurs in each simulation area. Step S26, judging whether each simulation area is a sensitive area according to whether single particle burning occurs in each simulation area.
In one embodiment, the processor when executing the computer program further performs the steps of: step S31, device information of the power device is acquired. And S32, constructing a second simulation model according to the device information. Step S33, defining a corresponding region of the sensitive region in the simulation structure of the power device in the second simulation model. Step S34, based on the second simulation model, the process of generating nuclear reaction secondary particles and generating nuclear reaction process by simulating the incidence of radiation particles to the power device to be tested is simulated. In step S35, the deposition energy of the nuclear reaction secondary particles entering the sensitive area is acquired.
In one embodiment, the processor when executing the computer program further performs the steps of: step S51, calculating the section of the single particle burning event according to the number of the single particle burning events. And S52, acquiring the failure rate of the power device caused by the radiation particles according to the single particle burnout event section and the atmospheric neutron flux.
In one embodiment, a computer readable storage medium is provided having a computer program stored thereon, which when executed by a processor, performs the steps of:
step S1, acquiring threshold energy of heavy ions, wherein the threshold energy is minimum deposition energy of the heavy ions required for causing single particle burning of a power device to be detected, and the power device to be detected is in an off state and under a preset bias voltage.
And S2, simulating a process that heavy ions with deposition energy larger than or equal to threshold energy are incident to the power device to be detected, and determining a sensitive area of the power device.
And S3, simulating a process that the radiation particles are incident to the power device to be detected to generate secondary heavy ions, and acquiring deposition energy of the secondary heavy ions generated by the radiation particles and entering the sensitive area.
And S4, acquiring the times of single event burning of the power device to be detected according to the relation between the deposition energy of the secondary heavy ions entering the sensitive area and the threshold energy.
And S5, evaluating the failure rate condition of the power device to be tested caused by the radiation particles according to the times of the single particle burning events.
In one embodiment, the computer program when executed by the processor further performs the steps of: and S11, acquiring the minimum bias voltage of the power device in the off state, wherein the minimum bias voltage is generated by single particle burnout under the irradiation of heavy ions with different linear energy transfer values. Step S12, the relation between the linear energy transfer value of the heavy ions and the minimum bias voltage is converted into the relation between the deposition energy of the heavy ions and the minimum bias voltage. Step S13, obtaining the threshold energy of the heavy ions according to the relation between the precipitation energy of the heavy ions and the minimum bias voltage.
In one embodiment, the computer program when executed by the processor further performs the steps of: step S21, device information of the power device is acquired. Step S22, a first simulation model is built according to the device information. Step S23, dividing the simulation structure of the power device in the first simulation model into a plurality of simulation areas. Step S24, simulating a process of injecting heavy ions with deposition energy greater than or equal to threshold energy into a simulation area of the power device to be tested based on the first simulation model. Step S25, judging whether single particle burning occurs in each simulation area. Step S26, judging whether each simulation area is a sensitive area according to whether single particle burning occurs in each simulation area.
In one embodiment, the computer program when executed by the processor further performs the steps of: step S31, device information of the power device is acquired. And S32, constructing a second simulation model according to the device information. Step S33, defining a corresponding region of the sensitive region in the simulation structure of the power device in the second simulation model. Step S34, based on the second simulation model, the process of generating nuclear reaction secondary particles and generating nuclear reaction process by simulating the incidence of radiation particles to the power device to be tested is simulated. In step S35, the deposition energy of the nuclear reaction secondary particles entering the sensitive area is acquired.
In one embodiment, the computer program when executed by the processor further performs the steps of: step S51, calculating the section of the single particle burning event according to the number of the single particle burning events. And S52, acquiring the failure rate of the power device caused by the radiation particles according to the single particle burnout event section and the atmospheric neutron flux.
Those skilled in the art will appreciate that implementing all or part of the above-described methods in accordance with the embodiments may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed may comprise the steps of the embodiments of the methods described above. Any reference to memory, storage, database, or other medium used in embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, or the like. Volatile memory can include random access memory (Random Access Memory, RAM) or external cache memory. By way of illustration, and not limitation, RAM can be in the form of a variety of forms, such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM), and the like.
In the description of the present specification, reference to the term "one embodiment" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (10)
1. A power device failure rate evaluation method for evaluating a case where radiation particles generating secondary heavy ions by indirect ionization cause failure rate of a power device, the method comprising:
acquiring threshold energy of the heavy ions, wherein the threshold energy is minimum deposition energy of the heavy ions required for causing single particle burning of a power device to be detected, and the power device to be detected is in an off state and is in a state under a preset bias voltage;
simulating the process that the heavy ions with the deposition energy being greater than or equal to the threshold energy are incident to the power device to be detected, and determining a sensitive area of the power device;
simulating the process that the radiation particles are incident to the power device to be detected to generate secondary heavy ions, and acquiring deposition energy of the secondary heavy ions generated by the radiation particles and entering the sensitive area;
acquiring the number of single event burnout events of the power device to be detected according to the relation between the deposition energy of the secondary heavy ions entering the sensitive area and the threshold energy;
according to the times of the single particle burning events, evaluating the failure rate condition of the power device to be tested caused by the radiation particles;
the acquiring the threshold energy of the heavy ions comprises:
acquiring the minimum bias voltage of the power device in the off state, wherein the minimum bias voltage is generated by single particle burnout under the irradiation of heavy ions with different linear energy transfer values;
converting a relationship between the linear energy transfer value of the heavy ions and the minimum bias voltage into a relationship between the deposition energy of the heavy ions and the minimum bias voltage;
and acquiring the threshold energy of the heavy ions according to the relation between the precipitation energy of the heavy ions and the minimum bias voltage.
2. The failure rate evaluation method according to claim 1, wherein the power device is a metal-oxide-semiconductor field effect transistor (MOSFET), a power Diode (Diode), or an Insulated Gate Bipolar Transistor (IGBT).
3. The failure rate assessment method according to claim 1, wherein simulating a process in which the heavy ions having deposition energy greater than or equal to the threshold energy are incident on the power device to be measured, determining a sensitive region of the power device comprises:
acquiring device information of the power device;
constructing a first simulation model according to the device information;
dividing a simulation structure of the power device in the first simulation model into a plurality of simulation areas;
simulating a process of injecting the heavy ions with the deposition energy larger than or equal to the threshold energy into the simulation area of the power device to be tested based on the first simulation model;
judging whether each simulation area is burned by a single particle;
judging whether each simulation area is a sensitive area according to whether single particle burning occurs or not.
4. A failure rate assessment method according to claim 3, wherein said first simulation model is a three-dimensional process computer aided design simulation model.
5. The failure rate assessment method according to claim 3, wherein simulating a process of generating secondary heavy ions by the radiation particles incident on the power device to be measured, the obtaining deposition energy of the heavy ions generated by the radiation particles and entering the sensitive region comprises:
acquiring device information of the power device;
constructing a second simulation model according to the device information;
defining a corresponding region of the sensitive region in a simulation structure of the power device in the second simulation model;
simulating a process of generating a nuclear reaction process and a process of generating a nuclear reaction secondary particle by simulating the radiation particle to be incident to the power device to be tested based on the second simulation model;
deposition energy of the nuclear reaction secondary particles entering the sensitive area is acquired.
6. The failure rate assessment method according to claim 5, wherein the second simulation model is a monte carlo simulation model.
7. The failure rate evaluation method according to claim 1, wherein the evaluating the failure rate of the power device to be tested caused by the radiation particle according to the number of the single particle burn-in events includes:
calculating the section of the single event according to the times of the single event;
and acquiring the failure rate of the power device caused by the radiation particles according to the single particle burnout event section and the atmospheric neutron flux.
8. The failure rate assessment method according to any one of claims 1 to 7, wherein the radiation particle is a neutron or a proton.
9. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor implements the steps of the method of any one of claims 1 to 8 when the computer program is executed.
10. A computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any of claims 1 to 8.
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| CN112668232B (en) * | 2021-01-05 | 2022-03-11 | 中国原子能科学研究院 | Method, device, equipment and medium for acquiring SEE section caused by nuclear reaction |
| CN113569512B (en) * | 2021-07-23 | 2023-08-29 | 扬州大学 | Method for determining single particle burnout sensitive area in P-type grid GaN HEMT device |
| CN113866582B (en) * | 2021-08-27 | 2024-06-04 | 北京工业大学 | Method for detecting instant burnout resistance of power device switch |
| CN115097277B (en) * | 2022-06-20 | 2024-04-12 | 南方电网科学研究院有限责任公司 | Atmospheric neutron acceleration irradiation test method for flexible direct current converter valve power unit |
| CN116500400B (en) * | 2022-09-08 | 2023-12-01 | 南京信息工程大学 | Online in-situ characterization system and method for failure state of solder layer of silicon carbide power device |
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