CN111735537A - Portable optical power detection device with opening resonant ring loaded with patch photoresistor - Google Patents
Portable optical power detection device with opening resonant ring loaded with patch photoresistor Download PDFInfo
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- CN111735537A CN111735537A CN202010580812.3A CN202010580812A CN111735537A CN 111735537 A CN111735537 A CN 111735537A CN 202010580812 A CN202010580812 A CN 202010580812A CN 111735537 A CN111735537 A CN 111735537A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 42
- 238000001514 detection method Methods 0.000 title claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 19
- 230000008878 coupling Effects 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 12
- 238000010615 ring circuit Methods 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical group OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 5
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000005253 cladding Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000005286 illumination Methods 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 5
- 206010070834 Sensitisation Diseases 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008313 sensitization Effects 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
Abstract
The invention belongs to the field of optical power detection, and particularly provides a portable optical power detection device with an open resonant ring loaded with a patch photoresistor, which comprises: the microwave resonance system comprises a microwave resonance structure, a scalar network analyzer and a singlechip module, wherein the microwave resonance structure adopts an open resonant loop circuit, and a patch photoresistor is loaded at an opening of the open resonant loop circuit; when the illumination irradiated on the patch photoresistor changes, the resonance peak value of the open resonance loop circuit changes, the resonance peak value is detected by the scalar network analyzer, and the single chip microcomputer module detects the offset of the resonance peak value, so that the optical power detection is realized. The optical power detection device provided by the invention realizes perfect combination of the photosensitive characteristic and the microwave resonance characteristic of the semiconductor material, and improves the detection sensitivity of the optical (infrared) weak signal by several orders of magnitude; meanwhile, the invention has the advantages of small structure, light weight, low cost, no environmental interference, convenient carrying and the like.
Description
Technical Field
The invention belongs to the field of optical power detection, and particularly provides a portable optical power detection device with an open resonant ring loaded with a patch photoresistor.
Background
With the rapid development of optical fiber network technology and optical communication technology, the requirement for optical power detection is higher and higher. In the field of optical communications, all optical devices are usually tested to ensure continuity, stability and safety of operation between devices.
The current optical (infrared) power detection method is mainly based on AD conversion, voltage signals of a measured photosensitive device (APD (avalanche photo diode or PIN tube) under optical irradiation signals are amplified and sampled through an amplifier, detection of the optical power signals is realized through a common amplifier, namely a linear amplifier and a logarithmic amplifier, wherein the range of the linear amplifier is about 30dB generally, different accuracy indexes are provided in different working ranges, the accuracy value is lower as the accuracy value is closer to the lower limit of the range, the advantage is that the linear amplifier is not easily influenced by the external environment, the logarithmic amplifier has a larger range, the value can reach 60dB generally, the logarithmic amplifier is uniform in the whole range, but the resolution in the range is reduced due to the prior art, the detection accuracy of the optical power is reduced, and the sampling range of the traditional AD converter for the optical power is generally within 0-20 dBm, whereas the actual optical power is usually higher than 20dBm, conventional AD converters will no longer meet the requirements. Meanwhile, the traditional photoelectric detection technology is realized by depending on the electrical property change characteristic of the photosensitive material under the light irradiation, but the lower limit of the electrical property detection of the photosensitive material is limited by the dark current of the material.
In summary, the conventional optical power detection technology has a small detection amplitude range, and the technology and cost limit the use condition and application range thereof, so that the invention provides the optical power detection device of the portable open-ended resonant ring loaded patch photoresistor.
Disclosure of Invention
The invention aims to provide a portable open resonant ring loading patch photosensitive resistor optical (infrared) power detection device aiming at the defects of the existing optical (infrared) power detection circuit; according to the invention, the high-dielectric semiconductor material patch photoresistor is loaded at the gap of the open resonant ring structure of the microstrip resonant circuit, when illumination changes, the resonant peak value of the resonant ring circuit changes, the change can be rapidly detected through a common scalar network analyzer (called a standard network module for short), and is transmitted to the singlechip, and then the functions of resonant peak value detection, automatic alarm and the like are realized through the singlechip.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a portable open resonant ring loaded patch photoresistor optical power detection device, comprising: the microwave resonance structure, the scalar network analyzer and the singlechip module; the microwave resonance structure is connected with a scalar network analyzer through a coaxial line, and the scalar network analyzer is connected with the single chip microcomputer module; the microwave resonance structure adopts an open resonant ring circuit, and the opening of the open resonant ring circuit is loaded with a patch photoresistor.
Further, the split resonant ring circuit includes: the dielectric substrate comprises a dielectric substrate 1, an open resonant ring 2 and a microstrip coupling end 3, wherein the open resonant ring is arranged on the upper surface of the dielectric substrate, and the center of the open resonant ring is positioned at the center of the upper surface of the dielectric substrate; the opening of the open resonant ring 2 is loaded with the patch photoresistor 6 to form a closed loop structure; the coaxial line 5 is connected with the microstrip coupling end 3 through an inner conductor contact pin 4, and microstrip coupling is realized on the open resonant ring 2.
Further, the patch photo-resistor 6 includes: from 4 layers of structures that ceramic substrate 10, electrode connecting layer 9, photosensitive material layer 8 and sapphire window 7 that up stacked gradually set up down constitute to and the cladding in the outer epoxy encapsulation 11 of 4 layers of structures.
Further, the semiconductor photosensitive material layer adopts cadmium sulfide or indium antimonide; the cadmium sulfide can realize photosensitive reaction of a visible light section, the indium antimonide can realize near-infrared photosensitive reaction of 2-6 um, namely the cadmium sulfide is adopted by the light detection device, and the indium antimonide is adopted by the infrared light detection device.
Furthermore, when the optical power detection device works, light to be detected vertically irradiates the patch photoresistor, a scalar network analyzer detects a resonance peak value of the open resonant loop circuit, data are transmitted to the single chip microcomputer module, the single chip microcomputer module carries out data processing to obtain a resonance peak value offset, and optical power detection is achieved by inquiring the resonance peak amplitude offset and an optical power comparison table.
The working principle of the invention is as follows:
the invention adopts a commonly used open resonant ring circuit in a microwave resonant structure, and a patch photoresistor 6 made of a high-dielectric photosensitive material is loaded at the opening of the open resonant ring 2 to form a closed loop structure; the patch photoresistor 6 is equivalent to an open circuit in the circuit due to high resistance and high dielectric; under illumination, the resistance value and the sensitivity of the patch photoresistor 6 are reduced, and electrons are transferred, so that the resonance peak value of the open resonance loop circuit is reduced and micro frequency deviation occurs; the portable standard net module connected to the open resonant ring circuit can measure the resonant peak amplitude of the open resonant ring circuit under illumination, so that the detection of the resonant peak amplitude offset is realized through the single chip microcomputer module connected with the standard net module, and the detection of the optical power is realized through inquiring the pre-constructed resonant peak amplitude offset and the optical power comparison table.
The invention has the beneficial effects that:
(1) the portable open resonant ring-loaded patch photosensitive resistor light (infrared) detection device provided by the invention can perfectly combine the photosensitive characteristic of a semiconductor material with the microwave resonance characteristic; implementing a new detection method;
(2) compared with the traditional photoelectric detection device, the infrared sensitization resistor is loaded on the split resonant ring circuit, the voltage applied to two ends of the infrared sensitization resistor is extremely small and can reach the level of muV or even lower, the dark current in the infrared sensitization device is greatly reduced, and the detection sensitivity of the infrared weak signal is improved by a plurality of levels;
(3) the invention changes the traditional multi-stage amplifying circuit structure into a low-noise standard network module structure, and has the advantages of low noise, light weight, low cost, short response time and the like;
(4) the invention has the advantages of small structure, light weight, cheap standard net module, no environmental interference and portability.
Drawings
FIG. 1 is a schematic diagram of an open microstrip resonant ring structure according to the present invention; wherein, 1 is the dielectric substrate, 2 is the open resonator ring, 3 is the microstrip coupling end, 4 is coaxial line inner conductor contact pin, 5 is coaxial connecting wire, 6 is paster photo resistance.
FIG. 2 is a schematic diagram of a semiconductor material patch photoresistor structure according to the present invention; wherein, 7 is sapphire window, 8 is the photosensitive material layer, 9 is the electrode connecting layer, 10 is the ceramic substrate, 11 is epoxy encapsulation.
FIG. 3 is a diagram of the structure of the optical (infrared) detection device of the portable open resonator loaded with the patch photoresistor according to the present invention; where 12 is an external light source and 13 is a ray route map.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The embodiment provides a portable optical (infrared) detection device with an open resonant ring loading patch photoresistor, and the whole structure of the device is as shown in fig. 3, and specifically comprises: the microwave resonance structure, the scalar network analyzer and the singlechip module; the microwave resonance structure is connected with a scalar network analyzer through a coaxial line, and the scalar network analyzer is connected with the single chip microcomputer module;
the microwave resonance structure adopts an open resonant ring circuit, as shown in fig. 1, and specifically includes: the dielectric substrate comprises a dielectric substrate 1, an open resonant ring 2 and a microstrip coupling end 3, wherein the open resonant ring is arranged on the upper surface of the dielectric substrate, and the center of the open resonant ring is positioned at the center of the upper surface of the dielectric substrate; the opening of the open resonant ring 2 is loaded with the patch photoresistor 6 to form a closed loop structure; the coaxial line 5 is connected with the microstrip coupling end 3 through an inner conductor contact pin 4, and microstrip coupling is realized on the open resonant ring 2; in this embodiment: the substrate 1 is sapphire with the size of 4mm 3mm 0.5mm, the open resonant ring 2 and the microstrip coupling end 3 are both made of copper with the thickness of 0.0375mm, the outer radius of the open ring is 1.25mm, and the width of the ring is 0.2 mm; the length of the microstrip coupling end 3 is adjusted to enable the initial resonance peak value to be about-30 db, and the closer the peak value is to 0, the more stable the peak value is, but the worst corresponding sensitivity is proved by experiments, so that the initial resonance peak value is set to-30 db to be optimal in performance in the embodiment;
the patch photoresistor 6 is shown in fig. 2 and comprises: the solar cell comprises a 4-layer structure and an epoxy resin package 11, wherein the 4-layer structure is formed by sequentially laminating a ceramic substrate 10, an electrode connecting layer 9, a photosensitive material layer 8 and a sapphire window 7 from bottom to top, and the epoxy resin package 11 is coated outside the 4-layer structure; in this embodiment: the thickness of the sapphire window 7 is 0.5mm, the photosensitive material layer 8 is made of cadmium sulfide/indium antimonide material with the thickness of 50nm, the thickness of the electrode connecting end 9 is 0.5mm, and the thickness of the ceramic substrate 10 is 1.5 mm.
In the initial state of the light (infrared) detection device with the portable open resonant ring loaded with the patch photoresistor, the patch photoresistor 6 is equivalent to an open circuit in a circuit, and the peak value of the initial resonant peak is-30 db; the patch photoresistor 6 is vertically irradiated along a light line 13 by an external light source 12 with known optical power, a scalar network analyzer is used for measuring the resonance peak value of the open-ended resonance loop circuit under the power, then the measured resonance peak value is read by a single chip microcomputer module, data processing is further carried out to obtain the resonance peak value offset, and a comparison table of the resonance peak amplitude offset and the optical power can be constructed by repeating the process; when the light to be detected irradiates the patch photoresistor 6, the light power detection is realized through the resonance peak value offset of the open resonance loop circuit and the comparison table.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (5)
1. Portable opening resonant ring loading paster photo resistance's optical power detection device includes: the microwave resonance structure, the scalar network analyzer and the singlechip module; the microwave resonance structure is connected with a scalar network analyzer through a coaxial line, and the scalar network analyzer is connected with the single chip microcomputer module; the microwave resonance structure adopts an open resonant ring circuit, and the opening of the open resonant ring circuit is loaded with a patch photoresistor.
2. The optical power sensing device of claim 1, wherein said split-ring resonator circuit comprises: the dielectric substrate (1), set up in the upper surface of the dielectric substrate, and the centre of a circle locates at the open resonator ring (2) of the central position of upper surface of the dielectric substrate, and the microstrip coupling end (3) of the middle position of both sides edge of the dielectric substrate; a patch photoresistor (6) is loaded at the opening of the open resonant ring (2) to form a closed loop structure; the coaxial line (5) is connected with the microstrip coupling end (3) through the inner conductor contact pin (4) to realize microstrip coupling to the opening resonance ring (2).
3. The optical power detecting device as claimed in claim 1, wherein said patch photo-resistor 6 comprises: from 4 layers of structures that ceramic substrate (10), electrode connecting layer (9), photosensitive material layer (8) and sapphire window (7) that up stacked gradually set up down constitute to and the cladding in 4 outer epoxy encapsulation (11) of layer structure.
4. The optical power sensing device of claim 1, wherein the semiconductor photosensitive material layer is cadmium sulfide or indium antimonide.
5. The optical power detecting apparatus as claimed in claim 1, wherein when the optical power detecting apparatus is in operation, the light to be detected vertically irradiates the patch photoresistor, the scalar network analyzer detects the peak-to-peak value of the resonance peak of the open resonant loop circuit, and transmits data to the single chip microcomputer module, the single chip microcomputer module processes the data to obtain the offset of the peak-to-peak value of the resonance peak, and the optical power detecting apparatus detects the optical power by querying the offset of the peak-to-peak value of the resonance peak and the optical power comparison table.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010580812.3A CN111735537B (en) | 2020-06-23 | 2020-06-23 | Portable optical power detection device with opening resonant ring loaded with patch photoresistor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010580812.3A CN111735537B (en) | 2020-06-23 | 2020-06-23 | Portable optical power detection device with opening resonant ring loaded with patch photoresistor |
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| CN111735537A true CN111735537A (en) | 2020-10-02 |
| CN111735537B CN111735537B (en) | 2022-05-03 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0412357A2 (en) * | 1989-08-08 | 1991-02-13 | Hewlett-Packard Company | Lightwave test set for an rf network analyzer system |
| JP2550875B2 (en) * | 1993-07-31 | 1996-11-06 | 日本電気株式会社 | Wideband frequency characteristic measurement circuit of receiver converter |
| US20070009200A1 (en) * | 2005-04-21 | 2007-01-11 | Hochberg Michael J | Apparatus and method for detecting optical radiation |
| CN101262211A (en) * | 2007-10-16 | 2008-09-10 | 东南大学 | Self-resonance structure based on open hole resonance loop |
| CN205404447U (en) * | 2016-03-08 | 2016-07-27 | 云南大学 | Asymmetric couple of opening resonant transducer of complementary type based on microstrip |
| CN109932057A (en) * | 2019-04-01 | 2019-06-25 | 电子科技大学 | Optical power detection apparatus and method based on quasi optical cavity microwave resonance principle |
| CN110441613A (en) * | 2019-08-14 | 2019-11-12 | 中电科仪器仪表有限公司 | Coaxial resonant cavity test method and system based on scalar network analyzer |
-
2020
- 2020-06-23 CN CN202010580812.3A patent/CN111735537B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0412357A2 (en) * | 1989-08-08 | 1991-02-13 | Hewlett-Packard Company | Lightwave test set for an rf network analyzer system |
| JP2550875B2 (en) * | 1993-07-31 | 1996-11-06 | 日本電気株式会社 | Wideband frequency characteristic measurement circuit of receiver converter |
| US20070009200A1 (en) * | 2005-04-21 | 2007-01-11 | Hochberg Michael J | Apparatus and method for detecting optical radiation |
| CN101262211A (en) * | 2007-10-16 | 2008-09-10 | 东南大学 | Self-resonance structure based on open hole resonance loop |
| CN205404447U (en) * | 2016-03-08 | 2016-07-27 | 云南大学 | Asymmetric couple of opening resonant transducer of complementary type based on microstrip |
| CN109932057A (en) * | 2019-04-01 | 2019-06-25 | 电子科技大学 | Optical power detection apparatus and method based on quasi optical cavity microwave resonance principle |
| CN110441613A (en) * | 2019-08-14 | 2019-11-12 | 中电科仪器仪表有限公司 | Coaxial resonant cavity test method and system based on scalar network analyzer |
Non-Patent Citations (2)
| Title |
|---|
| 王花: "柔性太赫兹波超材料吸收器的研究", 《中国优秀硕士学位论文全文数据库》 * |
| 秦德培: "《大学物理学》", 31 December 1996 * |
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