CN111735530A - SOI (silicon on insulator) sensing chip and resonant MOMES (metal-oxide-semiconductor field effect transistor) vector hydrophone - Google Patents
SOI (silicon on insulator) sensing chip and resonant MOMES (metal-oxide-semiconductor field effect transistor) vector hydrophone Download PDFInfo
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Abstract
The invention relates to the field of underwater acoustic sensing, in particular to an SOI (silicon on insulator) sensing chip and a resonant MOMES (metal oxide semiconductor manufacturing systems) vector hydrophone based on the same, wherein the SOI sensing chip comprises a tunable laser, an optical attenuator, an optical isolator, a 3dB beam splitter, a first polarization controller, a second polarization controller, an SOI sensing chip, a first photoelectric detector and a second photoelectric detector, and all the devices are connected through connecting optical fibers; the beneficial technical effects are as follows: the underwater acoustic sensing is realized through the resonant cantilever beam, and the extremely high sensitivity can be realized in the designed working spectrum; by adopting the design of the sensing cantilever beam and the reference cantilever beam, the system and the environment common mode noise are effectively inhibited by acquiring the signal difference value of the sensing cantilever beam and the reference cantilever beam, and the detection precision and the resolution of the system can be greatly improved; the cantilever beam structure for underwater acoustic signal sensing and the ridge waveguide structure for signal reading are designed in the same plane, the chip structure is compact, the chip structure is compatible with the standard SOI process, low-cost mass production is facilitated, and the performance stability and repeatability of the system can be ensured.
Description
Technical Field
The invention relates to the field of underwater acoustic sensing, in particular to an SOI (Silicon-On-Insulator) sensing chip and a Micro-Electro-Mechanical-System (MOMES) vector hydrophone based On the same.
Background
Compared with a scalar hydrophone which can only measure a sound pressure signal, the vector hydrophone can measure vector information such as particle displacement, velocity or acceleration of an underwater sound field, and therefore line spectrum detection capability, anti-interference capability and isotropic noise resistance of the underwater sound measurement system are obviously improved. The vector hydrophone with high sensitivity, high integration, low power consumption and low cost has wide application prospect in the fields of marine resource exploration, submarine geological exploration, submarine observation network, marine homeland safety and the like.
According to the difference between the materials and mechanisms for realizing underwater acoustic sensing, vector hydrophones can be divided into three types, namely piezoelectric type, optical fiber type, MEMS (micro-electromechanical systems) and MOMES (metal-organic systems). The invention relates to a three-dimensional piezoelectric ceramic vector hydrophone (ZL 201210372979.6), "a three-dimensional ring vector hydrophone (ZL201310067898.X), a composite type vector hydrophone (application No. 201310392752.2, published as 2013-12-25)," a low-frequency sound vector hydrophone (application No. 201610795311.0, published as 2017-01-04), and "a two-dimensional co-vibration vector hydrophone (application No. 201820683164.2, published as 2019-04-26), which are invented in China, and the piezoelectric hydrophone is used for realizing co-vibration or vibration velocity type vector underwater sound sensing. However, the piezoelectric vector hydrophone has low sensitivity, poor anti-interference capability, limited signal transmission distance and poor practical application effect. The invention patents of China, namely ' push-pull type optical fiber laser vector hydrophone ' (ZL201310035388.4), ' three-dimensional pressure difference type optical fiber vector hydrophone ' (ZL201721863974.8), ' combined type optical fiber vector hydrophone ' (ZL201721878821.0), and China ' invention patent application ' optical fiber laser vector hydrophone ' (application No. 201910032857.4, published Japanese 2019-04-19), ' interference type three-dimensional vector hydrophone based on optical fiber grating ' (application No. 201310711632.4, published Japanese 2014-03-26) and the like, provide different methods for realizing underwater acoustic vector field measurement based on the optical fiber hydrophone, respectively realize underwater acoustic sensing by using optical fiber laser or optical fiber interferometer, and realize acquisition of underwater acoustic field vector information by combining a push-pull structure, a pressure difference structure or a three-component combined structure. The double-arm interference type optical fiber hydrophone has the mature scheme and the wide application, but has the defects of complex structure, large volume, high cost and great difficulty in expanding frequency bands. The scheme for realizing the micro hydrophone based on the MEMS technology is provided by Chinese invention patents of 'differential vibration isolation type MEMS vector hydrophone' (ZL201410626399.4), 'MEMS three-dimensional co-vibration type vector hydrophone based on piezoresistive effect' (ZL201710450802.6), and 'wide band MEMS vector hydrophone imitating seal beard' (application No. 201510670121.1, published Japanese 2015-12-23), 'high sensitivity wide band piezoelectric type MEMS vector hydrophone' (application No. 201810434347.5, published Japanese 2018-11-02) and the like, and mainly relates to how to realize better device performance by combining a cilium type microstructure with piezoelectric or piezoresistive effect, but the sensor technology is complex, relates to precision assembly among sensing structures, and is poor in device consistency and stability and difficult to use. The invention patent of China 'an MOMES vector hydrophone' (ZL201510411902.9) uses four symmetrically distributed F-P interferometers to measure the displacement change of a cilium supporting structure caused by sound wave disturbance by using the basic structure of cilium type bionic sensing, the sensing structure is complex, the assembly difficulty is high, and the integration degree advantage of the device is greatly reduced due to the existence of the cilium structure.
Therefore, how to realize a vector hydrophone with high sensitivity, strong anti-interference capability, compact structure, low cost and simple process is a technical problem which needs to be solved urgently at present.
Disclosure of Invention
The invention aims to solve the defects of the prior art and provides an SOI (silicon on insulator) sensing chip and a resonant MOMES (metal-oxide-semiconductor field effect transistor) vector hydrophone based on the same, wherein a cantilever beam structure and a ridge waveguide for underwater sound sensing are manufactured on the SOI sensing chip by adopting a standard electron beam etching process, and the purpose of meeting the application requirements of the vector hydrophone with compact structure, excellent performance and strong anti-interference capability is achieved so as to realize high-sensitivity detection on weak underwater sound signals.
The purpose of the invention is realized by the following technical scheme:
an SOI sensing chip is prepared on the basis of a standard commercial SOI wafer, is integrally square and comprises a silicon substrate layer 7A, a silicon dioxide insulating layer 7B and a silicon structure layer 7C, wherein the silicon substrate layer 7A is composed of a monocrystalline silicon layer and used for structural support, the silicon dioxide insulating layer 7B is composed of a layer of silicon dioxide material and used for isolating the silicon substrate layer from the silicon structure layer and facilitating release of a silicon structure layer micro-nano structure, and the silicon structure layer 7C is composed of a monocrystalline silicon layer and used for manufacturing the micro-nano structure; on the silicon structure layer 7C, a cantilever beam structure and a ridge waveguide for underwater acoustic sensing are manufactured by adopting a standard electron beam etching process, and the method specifically comprises the following steps: the sensing cantilever beam 7C-1 is used for converting an incident underwater sound signal into cantilever beam deformation; a first input ridge waveguide signal input 7C-2 for coupling signal light from an external optical path to the first input ridge waveguide; a first input ridge waveguide 7C-3 for transmitting optical signals to the sensing cantilever ridge waveguide; the sensing cantilever beam ridge waveguide 7C-4 is used for transmitting an optical signal to the first output ridge waveguide; a first output ridge waveguide 7C-5 for transmitting the signal light to the signal output terminal; a first output ridge waveguide signal output terminal 7C-6 for coupling an optical signal to an external photoelectric detection system; a second input ridge waveguide signal input 7C-7 for coupling signal light from an external optical path to a second input ridge waveguide; a second input ridge waveguide 7C-8 for transmitting the optical signal to the ridge waveguide on the reference cantilever; the reference cantilever beam 7C-9 is used for providing a reference signal for the sensing cantilever beam so as to eliminate the common mode noise of the system; a reference cantilever ridge waveguide 7C-10 for transmitting the optical signal to the second output ridge waveguide; a second output ridge waveguide 7C-11 for transmitting the signal light to the signal output terminal; and a second output ridge waveguide signal output terminal 7C-12 for coupling the optical signal to an external photodetection system.
Further, the thickness of the silicon substrate layer 7A is 300 μm, the thickness of the silicon dioxide insulating layer 7B is 1 μm, and the thickness of the silicon structure layer 7C is 10 μm.
Further, the size of the sensing cantilever 7C-1 is 9.5mm × 2.5mm × 10 μm, the size of the reference cantilever 7C-9 is 0.2mm × 2.5mm × 10 μm, the width W2 of the ridge waveguide (including the first input ridge waveguide 7C-3, the sensing cantilever ridge waveguide 7C-4, the first output ridge waveguide 7C-5, the second input ridge waveguide 7C-8, the reference cantilever ridge waveguide 7C-10 and the second output ridge waveguide 7C-11) is 4 μm, the etching depth H is 3 μm, and the etching width W1 is 6 μm.
Further, the reference cantilever 7C-9 has dimensions of 9.5mm by 2.5mm by 10 μm.
The invention also provides a resonant MOMES vector hydrophone based on the SOI sensing chip, which comprises an adjustable laser 1, an optical attenuator 2, an optical isolator 3, a 3dB beam splitter 4, a first polarization controller 5, a second polarization controller 6, an SOI sensing chip 7, a first photoelectric detector 8 and a second photoelectric detector 9, wherein all the devices are connected through connecting optical fibers; the output light beam of the adjustable laser 1 is adjusted to proper light intensity by the optical attenuator 2 and then enters the optical isolator 3, the output light beam of the optical isolator 3 is divided into 1:1 two beams of light by the 3dB beam splitter 4 and then enters the first input ridge waveguide 7C-3 and the second input ridge waveguide 7C-8 of the SOI sensing chip 7 respectively by the first polarization controller 5 and the second polarization controller 6, wherein the first polarization controller 5 is connected with the first input ridge waveguide signal input end 7C-2 by the connecting optical fiber, and the second polarization controller 6 is connected with the second input ridge waveguide signal input end 7C-7 by the connecting optical fiber; the output light of the first input ridge waveguide 7C-3 is coupled into a sensing cantilever ridge waveguide 7C-4, and the output light of the sensing cantilever ridge waveguide 7C-4 is coupled into a first output ridge waveguide 7C-5; the first output ridge waveguide signal output end 7C-6 is connected with the first photoelectric detector 8 through a connecting optical fiber, and output light of the first output ridge waveguide 7C-5 enters the first photoelectric detector 8; the output light of the second input ridge waveguide 7C-8 is coupled into a reference cantilever beam shaped waveguide 7C-10, and the output light of the reference cantilever beam ridge waveguide 7C-10 is coupled into a second output ridge waveguide 7C-11; the second output ridge waveguide signal output end 7C-12 is connected with a second photoelectric detector 9 through a connecting optical fiber, output light of the second output ridge waveguide 7C-11 enters the second photoelectric detector 9, and the first photoelectric detector 8 and the second photoelectric detector 9 form an external photoelectric detection system;
furthermore, the connecting optical fibers are all polarization maintaining optical fibers.
Further, the working frequency of the resonant MOMES vector hydrophone is determined by the first-order resonant frequency of the reference cantilever beam 7C-9.
Further, the hydrophone operating frequency can be changed by changing the dimensions of the reference cantilever 7C-9, for example, from 150Hz to 100Hz when the reference sensing cantilever 7C-9 changes from 9.5mm 2.5mm 10 μm to 9.5mm 1.5mm 10 μm.
The invention is based on the following principle: when sound waves in a specific direction are incident on the SOI sensing chip, the sensing cantilever beam is bent under the action of sound pressure and viscous force, so that the relative positions of the first input ridge waveguide, the ridge waveguide of the sensing cantilever beam and the first output ridge waveguide are slightly changed, the light intensity coupling coefficient among the ridge waveguides is further changed, and the output voltage of the first photoelectric detector is changed; the reference cantilever beam is almost not bent, so that the relative positions of the second input ridge waveguide, the reference cantilever beam ridge waveguide and the second output ridge waveguide are not changed, and the output voltage of the second photoelectric detector is basically not changed; the size of the bending deformation of the sensing cantilever beam under the action of sound pressure can be accurately recorded by detecting the difference value of the output signals of the first photoelectric detector and the second photoelectric detector, and the size of the sound pressure can be inverted by calibration, so that the high-sensitivity accurate measurement of an incident sound field is realized; meanwhile, because the reference cantilever beam is adopted, the influence of the common-mode noise of the system can be effectively eliminated, and the detection precision of the system is improved.
Compared with the prior art, the invention has the following beneficial technical effects:
firstly, underwater sound sensing is realized through the resonant cantilever beam, and extremely high sensitivity can be realized in a designed working spectrum;
secondly, by adopting the design of the sensing cantilever beam and the reference cantilever beam, the common mode noise of the system and the environment is effectively inhibited by collecting the signal difference value of the sensing cantilever beam and the reference cantilever beam, and the detection precision and the resolution of the system can be greatly improved;
moreover, the cantilever beam structure for underwater acoustic signal sensing and the ridge waveguide structure for signal reading are designed in the same plane, the chip structure is compact, the chip structure is compatible with the standard SOI process, low-cost mass production is facilitated, and the performance stability and repeatability of the system can be ensured;
and finally, the system has strong anti-interference capability through reading in and reading out all-optical signals, can be compatible with the existing optical fiber communication technology, and has the basis of long-distance transmission.
Drawings
The invention is further illustrated by means of the attached drawings, but the embodiments in the drawings do not constitute any limitation to the invention, and for a person skilled in the art, other drawings can be obtained on the basis of the following drawings without inventive effort. In the drawings:
FIG. 1 is a schematic structural diagram of an SOI sensor chip according to the present invention;
FIG. 2 is a schematic structural diagram of a resonant MOMES vector hydrophone system according to the present invention;
FIG. 3 is a schematic cross-sectional structure diagram of a sensing structure of the SOI sensing chip according to the present invention;
FIG. 4 is a schematic diagram of the cross-sectional structure of a ridge waveguide of the SOI sensor chip according to the present invention;
FIG. 5 is a schematic diagram of a simulation result of the deformation of a sensing cantilever beam of the SOI sensing chip under the action of sound pressure;
FIG. 6 is a schematic diagram of the relationship between the displacement of the sensing cantilever and the output light intensity according to the present invention;
description of reference numerals:
1: tunable laser, 2 optical attenuator, 3: optical isolator, 4: 3dB splitter, 5: first polarization controller, 6: second polarization controller, 7: SOI sensor chip, 8: first photodetector, 9: a second photodetector;
7A: silicon substrate layer, 7B: silicon dioxide insulating layer, 7C: silicon structure layer, 7C-1: sensing cantilever, 7C-2: first input ridge waveguide signal input, 7C-3: first input ridge waveguide, 7C-4: sensing cantilever ridge waveguide, 7C-5: first output ridge waveguide, 7C-6: first output ridge waveguide output port, 7C-7: second input ridge waveguide signal input, 7C-8: second input ridge waveguide, 7C-9: reference cantilever, 7C-10: reference cantilever ridge waveguide, 7C-11: second output ridge waveguide, 7C-12: and a second output ridge waveguide output port.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the following detailed description of the present invention is provided with reference to the accompanying drawings and specific embodiments, and it is to be noted that the embodiments and features of the embodiments of the present application can be combined with each other without conflict.
In combination with fig. 1 and 2, when a resonant MOMES vector hydrophone of the invention is used for measuring a water sound field,
the output light beam of the adjustable laser 1 is adjusted to proper light intensity by the optical attenuator 2 and then enters the optical isolator 3, the output light beam of the optical isolator 3 is divided into 1:1 two beams of light by the 3dB beam splitter 4 and then enters the first input ridge waveguide 7C-3 and the second input ridge waveguide 7C-8 of the SOI sensing chip 7 respectively by the first polarization controller 5 and the second polarization controller 6, wherein the first polarization controller 5 is connected with the first input ridge waveguide signal input end 7C-2 by the connecting optical fiber, and the second polarization controller 6 is connected with the second input ridge waveguide signal input end 7C-7 by the connecting optical fiber; the output light of the first input ridge waveguide 7C-3 is coupled into a sensing cantilever ridge waveguide 7C-4, and the output light of the sensing cantilever ridge waveguide 7C-4 is coupled into a first output ridge waveguide 7C-5; the first output ridge waveguide signal output end 7C-6 is connected with the first photoelectric detector 8 through a connecting optical fiber, and output light of the first output ridge waveguide 7C-5 enters the first photoelectric detector 8; the output light of the second input ridge waveguide 7C-8 is coupled into a reference cantilever beam shaped waveguide 7C-10, and the output light of the reference cantilever beam ridge waveguide 7C-10 is coupled into a second output ridge waveguide 7C-11; the second output ridge waveguide signal output end 7C-12 is connected with a second photoelectric detector 9 through a connecting optical fiber, output light of the second output ridge waveguide 7C-11 enters the second photoelectric detector 9, and the first photoelectric detector 8 and the second photoelectric detector 9 form an external photoelectric detection system;
(ii) a The connection between the devices is realized by polarization maintaining optical fibers; when sound waves in a specific direction are incident on the SOI sensing chip, under the action of sound pressure and viscous force, the sensing cantilever beam 7C-1 is bent, so that the relative positions of the first input ridge waveguide 7C-3, the sensing cantilever beam ridge waveguide 7C-4 and the first output ridge waveguide 7C-5 are slightly changed, the light intensity coupling coefficient among the ridge waveguides is further changed, and the output voltage of the first photoelectric detector 8 is changed; almost no bending of the reference cantilever 7C-9 occurs and there is no change in the relative positions between the second input ridge waveguide 7C-8, the reference cantilever ridge waveguide 7C-10 and the second output ridge waveguide 7C-11, so that there is substantially no change in the output voltage of the second photodetector 9; by detecting the difference value of the output signals of the first photoelectric detector 8 and the second photoelectric detector 9, the bending deformation of the sensing cantilever beam 7C-1 under the action of sound pressure can be accurately recorded, and the sound pressure can be inverted through calibration, so that the high-sensitivity accurate measurement of an incident sound field is realized; meanwhile, due to the adoption of the reference cantilever beam 7C-9, the influence of common mode noise of the system can be effectively eliminated, and the detection precision of the system is improved.
Further, with reference to fig. 2 to 4, the SOI sensing chip employs a standard 8-inch SOI wafer, the thickness of the silicon substrate layer 7A is 300 μm, the thickness of the silicon dioxide insulating layer 7B is 1 μm, and the thickness of the silicon structure layer 7C is 10 μm; the size of the sensing cantilever 7C-1 is 9.5mm multiplied by 2.5mm multiplied by 10 mu m, the size of the reference cantilever 7C-9 is 0.2mm multiplied by 2.5mm multiplied by 10 mu m, the width W2 of the ridge waveguide (comprising a first input ridge waveguide 7C-3, a sensing cantilever ridge waveguide 7C-4, a first output ridge waveguide 7C-5, a second input ridge waveguide 7C-8, a reference cantilever ridge waveguide 7C-10 and a second output ridge waveguide 7C-11) is 4 mu m, the etching depth H is 3 mu m, and the etching width W1 is 6 mu m; the first input ridge waveguide 7C-3, the sensing cantilever ridge waveguide 7C-4, and the first output ridge waveguide 7C-5 are aligned; the second input ridge waveguide 7C-8, the reference cantilever ridge waveguide 7C-10, and the second output ridge waveguide 7C-11 are aligned.
Furthermore, if the working frequency band of the hydrophone needs to be changed, the change can be realized by changing the size of the reference cantilever beam 7C-9. For example, after changing the dimensions of the reference sensing cantilever 7C-9 from 9.5mm × 2.5mm × 10 μm to 9.5mm × 1.5mm × 10 μm, the hydrophone operating frequency will change from 150Hz to 100 Hz.
Further, with reference to fig. 6, the relationship between the displacement of the top end of the sensing cantilever 7C-1 and the normalized light intensity of the first ridge waveguide output port 7C-6 can be accurately calibrated, and then the linear working region shown in the figure is selected, and when the acoustic wave signal shown in fig. 19 is incident on the sensing cantilever 7C-1, the light intensity of the first ridge waveguide output port 7C-6 changes as shown in fig. 20, and the incident acoustic wave information can be accurately recorded.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
The present invention has not been described in detail, partly as is known to the person skilled in the art.
Claims (8)
1. An SOI sensing chip is prepared on the basis of a standard commercial SOI wafer, is integrally square and consists of a silicon substrate layer (7A), a silicon dioxide insulating layer (7B) and a silicon structure layer (7C), wherein the silicon substrate layer (7A) consists of a monocrystalline silicon layer and is used for structural support, the silicon dioxide insulating layer (7B) consists of a layer of silicon dioxide material and is used for isolating the silicon substrate layer from the silicon structure layer and simultaneously facilitating release of a silicon structure layer micro-nano structure, and the silicon structure layer (7C) consists of a monocrystalline silicon layer and is used for manufacturing the micro-nano structure; the method is characterized in that: on silicon structure layer (7C), adopt standard electron beam etching process, make cantilever beam structure and ridge waveguide for the underwater acoustic sensing, specifically include again: the sensing cantilever beam (7C-1) is used for converting an incident underwater sound signal into cantilever beam deformation; a first input ridge waveguide signal input (7C-2) for coupling signal light from an external optical path to the first input ridge waveguide; a first input ridge waveguide (7C-3) for transmitting an optical signal to the sensing cantilever ridge waveguide; a sensing cantilever ridge waveguide (7C-4) for transmitting an optical signal to the first output ridge waveguide; a first output ridge waveguide (7C-5) for transmitting the signal light to the signal output terminal; a first output ridge waveguide signal output (7C-6) for coupling the optical signal to an external photodetection system; a second input ridge waveguide signal input (7C-7) for coupling signal light from an external optical path to a second input ridge waveguide; a second input ridge waveguide (7C-8) for transmitting the optical signal to the ridge waveguide on the reference cantilever; the reference cantilever (7C-9) is used for providing a reference signal for the sensing cantilever so as to eliminate the common mode noise of the system; a reference cantilever ridge waveguide (7C-10) for transmitting the optical signal to the second output ridge waveguide; a second output ridge waveguide (7C-11) for transmitting the signal light to the signal output terminal; a second output ridge waveguide signal output (7C-12) for coupling the optical signal to an external photodetection system.
2. An SOI sensing chip according to claim 1, wherein: the thickness of the silicon substrate layer (7A) is 300 mu m, the thickness of the silicon dioxide insulating layer (7B) is 1 mu m, and the thickness of the silicon structure layer (7C) is 10 mu m.
3. An SOI sensing chip according to claim 1, wherein: the size of the sensing cantilever beam (7C-1) is 9.5mm multiplied by 2.5mm multiplied by 10 mu m, the size of the reference cantilever beam (7C-9) is 0.2mm multiplied by 2.5mm multiplied by 10 mu m, the width W2 of the ridge waveguide is 4 mu m, the etching depth H is 3 mu m, and the etching width W1 is 6 mu m.
4. An SOI sensing chip according to claim 1, wherein: the reference cantilever (7C-9) dimensions were 9.5mm by 2.5mm by 10 μm.
5. A resonant MOMES vector hydrophone based on the SOI sensor chip of any of claims 1 to 4, characterized in that: the device comprises an adjustable laser (1), an optical attenuator (2), an optical isolator (3), a 3dB beam splitter (4), a first polarization controller (5), a second polarization controller (6), an SOI sensing chip (7), a first photoelectric detector (8) and a second photoelectric detector (9), wherein all the devices are connected through connecting optical fibers; the output light beam of the tunable laser (1) is adjusted to proper light intensity through the optical attenuator (2) and then enters the optical isolator (3), the output light beam of the optical isolator (3) is divided into 1:1 two beams of light through the 3dB beam splitter (4), and then enters a first input ridge waveguide (7C-3) and a second input ridge waveguide (7C-8) of the SOI sensing chip (7) through the first polarization controller (5) and the second polarization controller (6), wherein the first polarization controller (5) is connected with a first input ridge waveguide signal input end (7C-2) through a connecting optical fiber, and the second polarization controller (6) is connected with a second input ridge waveguide signal input end (7C-7) through a connecting optical fiber; the output light of the first input ridge waveguide (7C-3) is coupled into a sensing cantilever ridge waveguide (7C-4), and the output light of the sensing cantilever ridge waveguide (7C-4) is coupled into a first output ridge waveguide (7C-5); the first output ridge waveguide signal output end (7C-6) is connected with the first photoelectric detector (8) through a connecting optical fiber, and output light of the first output ridge waveguide (7C-5) enters the first photoelectric detector (8); the output light of the second input ridge waveguide (7C-8) is coupled into a reference cantilever beam-shaped waveguide (7C-10), and the output light of the reference cantilever beam ridge waveguide (7C-10) is coupled into a second output ridge waveguide (7C-11); and the second output ridge waveguide signal output end (7C-12) is connected with a second photoelectric detector (9) through a connecting optical fiber, the output light of the second output ridge waveguide (7C-11) enters the second photoelectric detector (9), and the first photoelectric detector (8) and the second photoelectric detector (9) form an external photoelectric detection system.
6. A resonant MOMES vector hydrophone based on claim 5, wherein: and the connecting optical fibers are all polarization maintaining optical fibers.
7. A resonant MOMES vector hydrophone based on claim 5, wherein: the working frequency of the resonant MOMES vector hydrophone is determined by the first-order resonant frequency of the reference cantilever beam (7C-9).
8. A resonant MOMES vector hydrophone based on claim 5, wherein: the hydrophone operating frequency can be changed by changing the size of the reference cantilever beam (7C-9).
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