CN111725401B - Optical storage composite memristor and preparation method and application thereof - Google Patents

Optical storage composite memristor and preparation method and application thereof Download PDF

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CN111725401B
CN111725401B CN202010611824.8A CN202010611824A CN111725401B CN 111725401 B CN111725401 B CN 111725401B CN 202010611824 A CN202010611824 A CN 202010611824A CN 111725401 B CN111725401 B CN 111725401B
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memristor
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CN111725401A (en
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张磊
汪炼成
司佳威
肖灿城
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Central South University
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Abstract

The invention discloses an optical storage composite memristor and a preparation method and application thereof, and the optical storage composite memristor comprises a photoelectric detector and a pn heterostructure analog memristor, wherein the photoelectric detector and the pn heterostructure analog memristor share a substrate, the photoelectric detector sequentially comprises a photoelectric conversion layer and a metal upper electrode from the substrate to the top, and the pn heterostructure analog memristor sequentially comprises a metal lower electrode, a p-type oxide thin film layer, an n-type oxide thin film layer and a metal upper electrode from the substrate to the top; the metal upper electrode of the photoelectric detector is connected with the metal upper electrode of the pn heterostructure analog memristor. According to the invention, the analog memristor (synapse device) and the photoelectric detector are compounded to prepare the compound memristor, the voltage and the resistance value at two ends of the analog memristor can be accurately regulated through the photoconductive effect of different light-excited image sensors, and finally, the accurate regulation and control of the resistance value of the memristor by the optical signal can be realized, so that the more real artificial visual memory bionic simulation is further realized.

Description

Optical storage composite memristor and preparation method and application thereof
Technical Field
The invention belongs to the technical field of optical information storage, and particularly relates to an optical storage composite memristor and a preparation method and application thereof.
Background
In recent thirty years, artificial intelligence has rapidly developed, and is called the three-century-21 top technology together with genetic engineering and nanoscience. The method is widely applied to the subject fields of machine vision, fingerprint identification, face identification, retina identification, palm print identification, intelligent search, game, intelligent control, robotics and the like, and achieves fruitful results. The realization of bionic simulation of human basic functions by using multifunctional integrated electronic devices has been a hot point of artificial intelligence research.
Human beings sense the external objective world through organs such as eyes, ears, nose, mouth, tongue and the like, wherein more than 80 percent of information comes from vision. The human visual system senses external light information by eyes to obtain image information, and stores the sensed image information into a brain nervous system. The image sensor has the function similar to eyes, and utilizes a photoresponse semiconductor to realize photoelectric conversion, such as a photodiode, a phototransistor and the like, generates electron-hole pairs under the stimulation of optical signals, and converts the electron-hole pairs into current signals with corresponding proportional relations, thereby realizing the collection and detection of the optical signals. However, when the external light signal stimulus is removed, the sensed image information disappears immediately, and the image sensor cannot store the sensed information. The memristor as a novel storage device has the characteristics that the resistance value can be dynamically adjusted along with the flowing charges, the intrinsic self-learning capability is realized, the storage and the operation are combined into one, and the like. Meanwhile, the dimension of the memristor can be in the nanometer range, and a neural network which is similar to the brain capacity is hopefully realized in a single chip, so that the memristor is considered to be an ideal choice for realizing artificial nerve synapses. Therefore, to build a more realistic artificial visual memory device, a reasonable integration of the image sensor with the memristor may be a viable and efficient approach. However, the existing artificial visual memory system adopts a digital memristor, only has two or multiple resistance states of high resistance and low resistance, and generally can only realize the long-term memory of image information unless the memristor is restored by electric stimulation.
Disclosure of Invention
The invention aims to provide an optical storage composite memristor, and a preparation method and application thereof.
The optical storage composite memristor comprises a photoelectric detector and a pn heterostructure simulation memristor, wherein the photoelectric detector and the pn heterostructure simulation memristor share a substrate, the photoelectric detector sequentially comprises a photoelectric conversion layer and a metal upper electrode from the substrate to the top, and the pn heterostructure simulation memristor sequentially comprises a metal lower electrode, a p-type oxide thin film layer, an n-type oxide thin film layer and a metal upper electrode from the substrate to the top; the metal upper electrode of the photoelectric detector is connected with the metal upper electrode of the pn heterostructure analog memristor, so that the photoelectric detector and the analog memristor are connected in series.
The substrate is a quartz or sapphire substrate; the photoelectric conversion layer is Ga 2 O 3 A thin film layer with a thickness of 50-200 nm; the metal upper electrode of the photoelectric detector is one or more of Ni, al, au or Pt.
The metal lower electrode is one of Ni, al, au or Pt, and the thickness is 100-200 nm; the p-type oxide film layer is NiO or CuAlO 2 A thin film layer with a thickness of 50-100 nm; the n-type oxide film layer is ZnO or TiO 2 A thin film layer with a thickness of 50-100 nm; the metal upper electrode of the analog memristor is one or a combination of Ni, al, au or Pt.
The metal upper electrode of the photoelectric detector is the same as that of the pn heterostructure analog memristor and comprises a square shape and an interdigital shape, and the thickness of the metal upper electrode is 100-200 nm.
The preparation method of the composite memristor comprises the following steps:
(1) Firstly, photoetching patterns on a substrate, and growing a photoelectric conversion layer on the substrate by using a magnetron sputtering method;
(2) Carrying out alignment by using a photoetching machine, and then growing a metal lower electrode by using a magnetron sputtering method;
(3) Growing a p-type oxide thin film layer and an n-type oxide thin film layer on the lower metal electrode at room temperature in sequence by using a magnetron sputtering method;
(4) Etching the upper electrode patterns of the analog memristor and the photoelectric detector by using an ultraviolet photoetching machine sleeve, and then evaporating the metal upper electrode by using a thermal evaporation method
In the step 1), the magnetron sputtering temperature is 200 ℃.
In the steps 2) and 3), the magnetron sputtering temperature is room temperature.
In the step 4), the vacuum degree of thermal evaporation is 3 multiplied by 10 -4 Pa。
The composite memristor is applied as an artificial visual memory device.
The principle of the invention is as follows: when the optical storage composite memristor device is in an initial state, ga 2 O 3 The image sensor has higher resistance value, and the electric pulse signal mainly acts on Ga 2 O 3 A film. When Ga is irradiated by light of different wavelengths and intensities 2 O 3 When the image sensor is used, a photoconductive effect is generated to reduce the resistance of the image sensor, and the redistribution of electric pulse signals is realized according to the previously determined resistance value ratio of the two devices, so that the voltage applied to two ends of the analog memristor can be accurately calculated, the regulation and control of the light on the resistance value of the analog memristor are realized, and finally, the more real artificial visual memory bionic simulation is realized.
The invention has the beneficial effects that: 1) The analog memristor (synapse device) and the photoelectric detector are compounded to prepare the composite memristor, the voltage and the resistance value of two ends of the analog memristor can be accurately adjusted through the photoconductive effect of different light-excited image sensors, and finally the accurate regulation and control of the resistance value of the memristor by the optical signal can be realized, so that the more real artificial visual memory bionic simulation is further realized. 2) The storage part of the invention selects an analog memristor (a nerve synapse device), excites the synapse device through the optical signal, realizes the storage of the optical signal by utilizing the synapse device, and can better reflect the memory forgetting rule of human vision to the optical information.
Drawings
FIG. 1 is a schematic diagram of a structure of an optical storage composite memristor according to the present invention, wherein a black line of a metal top electrode can be considered as a conductive line;
fig. 2 is a top view of a scanning electron microscope of the optical storage composite memristor prepared in embodiment 1;
FIG. 3 is a working circuit diagram of the composite memristor of the present disclosure;
FIG. 4 is a 250nm illumination time dependence curve of series current of the composite memristive device under 3V bias voltage of the device prepared in example 1;
FIG. 5 is a relaxation process curve of a simulated memristor after 5s of irradiation of the device prepared in example 1 under a 5V bias of 250nm wavelength;
FIG. 6 is a graph of the relaxation process of the simulated memristor after irradiation for 10s of the device prepared in example 1 under a bias voltage of 5V and a wavelength of 250 nm.
Wherein: 1-a substrate; 2-photoelectric conversion layer, 3-metal lower electrode, 4-p type oxide film layer, 5-n type oxide film layer and 6-metal upper electrode.
Detailed Description
Example 1
The structure diagram of the optical storage composite memristor in the embodiment is shown in fig. 1, and it can be seen from fig. 1 that the composite memristor mainly comprises 2 parts including a photoelectric detector and a pn heterostructure analog memristor, the photoelectric detector and the pn heterostructure analog memristor share one substrate 1, the photoelectric detector sequentially comprises a photoelectric conversion layer 2 and a metal upper electrode 6 from the substrate 1 to the top, and the pn heterostructure analog memristor sequentially comprises a metal lower electrode 3, a p-type oxide thin film layer 4, an n-type oxide thin film layer 5 and a metal upper electrode 6 from the substrate 1 to the top; the metal upper electrode of the photoelectric detector and the metal upper electrode of the pn heterostructure analog memristor are connected in series.
In the specific structure of the embodiment, the substrate 1 is a quartz substrate, the photoelectric conversion layer 2 is a gallium oxide thin film layer, the metal lower electrode 3 is a metal Ni film layer, and the p-type oxide thin film layer 4 is a NiO thin film layer; the n-type oxide thin film layer 5 is a ZnO thin film layer, and the metal upper electrode 6 is a Ni thin film.
The preparation method of the optical storage composite memristor comprises the following steps:
1) Cleaning a quartz substrate by a physical or chemical method, respectively cleaning the quartz substrate by acetone, alcohol and deionized water, and then blowing the substrate by nitrogen;
2) Using ultraviolet photoetching technology, forming a square area on a quartz substrate through gluing, exposing and developing operations, and then depositing a layer of Ga by using a magnetron sputtering method 2 O 3 A thin film having a thickness of about 60nm. The preparation conditions are as follows: background vacuum below 4X 10 -4 Pa, sputtering gas: high purity argon (Ar), growth pressure: 2Pa, sputtering target: ga 2 O 3 Ceramic, sputtering power: 80W, substrate temperature: 200 degrees.
3) And stripping, removing the spin-coated glue, then carrying out alignment, carrying out gluing, exposing and developing operations, performing alignment on the quartz substrate to form another rectangular area, and then depositing a layer of Ni film serving as a metal lower electrode of the memristor by a magnetron sputtering method, wherein the thickness of the Ni film is about 100nm. The specific preparation conditions are as follows: background vacuum below 4X 10 -4 Pa, sputtering gas: high purity argon (Ar), growth pressure: 2Pa, sputtering target: au ceramic, sputtering power: 60W, substrate temperature: and (4) room temperature.
4) And then depositing p-type NiO and n-type ZnO films on the Ni metal lower electrode by a magnetron sputtering method in sequence, wherein the thicknesses of the two films are about 50nm. The preparation conditions of the NiO film are as follows: background vacuum below 4X 10 -4 Pa, sputtering gas: high purity oxygen (O) 2 ) Growth pressure: 2Pa, sputtering target: niO ceramic, sputtering power: 80W, substrate temperature: and (4) room temperature. The preparation conditions of the ZnO film are as follows: background vacuum below 4X 10 -4 Pa, sputtering gas: high purity argon (Ar), growth pressure: 2Pa, sputtering target: znO ceramic, sputtering power: 80W, substrate temperature: and (4) room temperature.
5) Stripping, removing spin-coated glue, performing alignment, performing gluing, exposure and development to form interdigital and square electrodes, evaporating Ni film with thickness of 100nm by thermal evaporation method to serve as upper metal electrodes of photoelectric detector and analog memristor respectively, wherein the vacuum degree of thermal evaporation is 3 × 10 -4 Pa, so as to construct a photoelectric detector and an analog memristor series device, and the specific structure is shown in figure 2.
And finally, stripping, removing the spin-coated glue, and preparing to obtain the composite memristor.
The working circuit diagram of the optical storage composite memristor prepared in the embodiment is shown in fig. 3. The performance test of the optical storage composite type memristor is carried out according to the circuit diagram in fig. 3, and the results are shown in 4-6. :
when a constant bias voltage of 3V was applied to the device, the current in the series circuit was measured using a semiconductor parameter tester to investigate the time-dependent characteristics of the device under 250nm light irradiation, as shown in FIG. 4. The initial current is smaller than about 200pA, and when light of 250nm irradiates Ga 2 O 3 The series current will increase when on the photodetector. For conventional Ga 2 O 3 The photodetector, when light is applied to the device, increases the device current to a fixed value, and when the light source is turned off, decreases the current to an initial resistance value. For the composite memristive device, as the illumination time increases, the current shows a gradually increasing characteristic; when light shines on the photoelectric detector, the resistance of the detector is reduced, voltage on two sides of the memristor is increased, and the resistance of the memristor is reduced. Thus, fig. 4 demonstrates that illumination can effectively modulate the memristor resistance value.
After the 5V bias 250nm wavelength light irradiates the artificial visual memory device 5s, the current at the two ends of the memristor is read by the 0.05V bias, as shown in FIG. 5. Compared with a memristor without light excitation, the current of the light-excited memristor is increased, and the fact that the compound memristor realizes the memory and forgetting of the optical signal is shown.
After the 5V bias 250nm wavelength light irradiates the artificial visual memory device 10s, the current across the memristor is read with the 0.05V bias, as shown in FIG. 6. It can be seen that for longer illumination time, the memristor can be excited to a larger current value, and a longer time is required for the current to return to the initial value; this is consistent with the human visual memory and amnesia characteristics.

Claims (7)

1. The optical storage composite memristor is characterized by comprising a photoelectric detector and a pn heterostructure analog memristor, wherein the photoelectric detector and the pn heterostructure analog memristor share a substrate, the photoelectric detector sequentially comprises a photoelectric conversion layer and a metal upper electrode from the substrate to the top, and the pn heterostructure analog memristor sequentially comprises a metal lower electrode, a p-type oxide thin film layer, an n-type oxide thin film layer and a metal upper electrode from the substrate to the top; the metal upper electrode of the photoelectric detector is connected with the metal upper electrode of the pn heterostructure analog memristor, so that the photoelectric detector and the analog memristor are connected in series;
the substrate is a quartz or sapphire substrate; the photoelectric conversion layer is Ga 2 O 3 A film layer with the thickness of 50 to 200nm; the metal upper electrode of the photoelectric detector is one or a combination of Ni, al, au or Pt;
the metal lower electrode is one of Ni, al, au or Pt, and the thickness is 100 to 200nm; the p-type oxide film layer is NiO or CuAlO 2 The thickness of the film layer is 50 to 100nm; the n-type oxide film layer is ZnO or TiO 2 A film layer with the thickness of 50 to 100nm; the metal upper electrode of the analog memristor is one or a combination of Ni, al, au or Pt.
2. The optical storage composite memristor according to claim 1, wherein the metal upper electrode of the photodetector is the same as the metal upper electrode of the pn heterostructure analog memristor, and includes two types, namely a square type and an interdigital type, and the thickness of the metal upper electrode is 100 to 200nm.
3. A preparation method of the optical storage composite memristor according to any one of claims 1 to 2, comprising the following steps:
(1) Firstly, photoetching patterns on a substrate, and growing a photoelectric conversion layer on the substrate by using a magnetron sputtering method;
(2) Carrying out alignment by using a photoetching machine, and then growing a metal lower electrode by using a magnetron sputtering method;
(3) Growing a p-type oxide thin film layer and an n-type oxide thin film layer on the lower metal electrode at room temperature in sequence by using a magnetron sputtering method;
(4) And etching upper electrode patterns of the analog memristor and the photoelectric detector by using an ultraviolet photoetching machine sleeve, and then evaporating the metal upper electrode by using a thermal evaporation method.
4. The method for preparing the optical storage composite memristor according to claim 3, wherein in the step 1), the magnetron sputtering temperature is 200 ℃.
5. The method for preparing the optical storage composite memristor according to claim 3, wherein in the steps 2) and 3), the magnetron sputtering temperature is room temperature.
6. The method for preparing the optical storage composite memristor according to claim 3, wherein in the step 4), the vacuum degree of thermal evaporation is 3 x 10 -4 Pa。
7. The application of the optical storage composite type memristor according to claim 1 as an artificial visual memory device.
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An Artificial Flexible Visual Memory System Based on an UV-Motivated Memristor;Shuai Chen等;《Advanced Materials》;20180108;第30卷;第1705400-1-1705400-9页 *

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