CN114203918B - Novel photoelectric memristor based on PVK/ZnO heterostructure - Google Patents
Novel photoelectric memristor based on PVK/ZnO heterostructure Download PDFInfo
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- CN114203918B CN114203918B CN202111501669.5A CN202111501669A CN114203918B CN 114203918 B CN114203918 B CN 114203918B CN 202111501669 A CN202111501669 A CN 202111501669A CN 114203918 B CN114203918 B CN 114203918B
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Abstract
The invention discloses a novel photoelectric memristor based on a PVK/ZnO heterostructure, which sequentially comprises the following components from bottom to top: a silicon substrate, a tungsten electrode layer, a zinc oxide layer, a polyvinylcarbazole layer and an aluminum electrode. According to the invention, a zinc oxide functional layer with high stability and high electron mobility can be introduced on the basis of the conventional PVK photoelectric memristor, so that the stability and the repeatability of the PVK photoelectric memristor are improved.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a novel photoelectric memristor based on a PVK/ZnO heterostructure.
Background
Memristors are nonlinear resistors, the resistance of which can change with changes in input (current or voltage), and through which the charge or magnetic flux flowing through the device is memorized. The pure electronic component memristor can be improved into the photoelectric memristor by introducing the light modulation signal so as to better simulate the nerve synapse in the visual system, and the rapid development of artificial intelligence brain-like nerve calculation can be further promoted.
PVK (polyvinylcarbazole) is a common organic material, and is more suitable for preparing an organic photoelectric memristor compared with other organic materials, but is limited by the problems of poor stability, low repeatable times and the like caused by the fact that an organic resistance transformation mechanism is not clear enough, the material stability is poor and the like, and the traditional PVK photoelectric memristor is poor in repeatability, unstable in high-low resistance state transformation and sensitive to temperature change.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a novel photoelectric memristor based on a PVK/ZnO heterostructure. The technical problems to be solved by the invention are realized by the following technical scheme:
a novel photoelectric memristor based on a PVK/ZnO heterostructure, the novel photoelectric memristor comprising, in order from bottom to top: a silicon substrate, a tungsten electrode layer, a zinc oxide layer, a polyvinylcarbazole layer and an aluminum electrode.
In one embodiment of the invention, the aluminum electrode comprises a first aluminum electrode, a second aluminum electrode, and a third aluminum electrode; the first aluminum electrode, the second aluminum electrode and the third aluminum electrode are sequentially positioned on the upper surface of the polyvinylcarbazole layer from left to right.
In one embodiment of the invention, the zinc oxide layer has a thickness of 20nm.
The invention has the beneficial effects that:
according to the invention, on the basis of the traditional PVK photoelectric memristor, the zinc oxide functional layer with high stability and high electron mobility is introduced, so that the memristor performance of the PVK photoelectric memristor can be improved.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
FIG. 1 is a schematic diagram of a conventional PVK photo-electric memristor structure;
FIG. 2 is a schematic diagram of a novel photoelectric memristor structure with a PVK/ZnO heterostructure provided by an embodiment of the present invention;
FIG. 3 is a schematic diagram showing the formation and breakage of a metal conductive wire in a zinc oxide material according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a conventional PVK photoelectric memristor test result provided by an embodiment of the present invention;
FIG. 5 is a schematic diagram of a test result of a novel photovoltaic memristor with a PVK/ZnO heterostructure provided by an embodiment of the present invention.
Reference numerals illustrate:
a silicon substrate 1, a tungsten electrode layer 2, a zinc oxide layer 3, a polyvinylcarbazole layer 4, a first aluminum electrode 51, a second aluminum electrode 52, and a third aluminum electrode 53.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Referring to fig. 1, fig. 1 is a schematic diagram of a conventional PVK photo memristor structure. The traditional PVK photoelectric memristor has poor repeatability, is not stable enough in high-low resistance state transition and is sensitive to temperature change. Aiming at the problem, the invention provides a novel photovoltaic memristor based on a PVK/ZnO heterostructure on the basis of a traditional PVK photovoltaic memristor.
Example 1
Referring to fig. 2, fig. 2 is a schematic diagram of a novel photoelectric memristor based on a PVK/ZnO heterostructure according to an embodiment of the present invention, where the novel photoelectric memristor includes, in order from bottom to top:
a silicon substrate 1, a tungsten electrode layer 2, a zinc oxide layer 3, a polyvinylcarbazole layer 4 and an aluminum electrode 5.
When the photoelectric memristor works, in order to ensure that the surface of a photoelectric material is not shielded so as to bring the photoelectric performance of the memristor into play to the best, the PVK layer in the novel photoelectric memristor based on the PVK/ZnO heterostructure provided by the invention is arranged on the zinc oxide layer.
The zinc oxide (ZnO) layer may also be referred to as a zinc oxide functional layer; the Polyvinylcarbazole (PVK) layer may also be referred to as a polyvinylcarbazole functional layer. The polyvinylcarbazole layer is a film.
The transition metal oxide represented by zinc oxide has a compact and uniform lattice structure, shows extremely strong stability, and has a higher melting point (zinc oxide melting point m.p. =1975℃) which indicates that the performance is not substantially affected by temperature changes. Zinc oxide is used as a wide-band gap semiconductor, has unipolar resistance switching behavior and higher electron mobility, and also has higher transparency and excellent normal-temperature luminescence performance.
In the process of electric initialization of zinc oxide, oxygen ions have higher mobility than zinc ions, under the action of an external electric field and a thermal effect, oxygen ions migrate to a positive electrode to leave oxygen vacancies, with the increase of the external voltage, the oxygen vacancies near a cathode gradually gather, electrons provided by an external bias voltage balance the internal charge of the material, and when the concentration of the oxygen vacancies is increased to a certain value, the oxygen vacancies near the electrode are rearranged to form ordered conductive crystalline zinc filaments (consisting of Zn and ZnO 1-x Co-composition), the metal conductive wire will further cause an electric field to be enhanced, allowing it to grow continuously in the same region, where the material assumes a low resistance state. When the external bias voltage reaches a certain value, the conductive wire growsAt the moment, the electric field in the zinc oxide starts to be reduced, the oxygen vacancy is restrained by oxygen ion migration caused by the electric field, high-concentration oxygen ions near the anode can be quickly backfilled to the oxygen vacancies, and Joule heat generated by oxygen ion backfilling and external electric field accumulation acts on the conductive filaments together, so that the conductive filaments are broken and decomposed, and the material is in a high-resistance state. Referring to fig. 3, fig. 3 is a schematic diagram of formation and fracture of a metal conductive wire in a zinc oxide material provided by the embodiment of the invention, and as can be seen from the memristive mechanism of the zinc oxide material, the formation and fracture process of the internal conductive wire is clear, and the memristive mechanism is stable. And the zinc oxide memristor has better stability, more repeatable times and less sensitivity to temperature change compared with an organic material memristor by comprehensively considering the material characteristics and the memristor mechanism.
Based on the mechanism, PVK and zinc oxide are combined, and the novel photoelectric memristor based on PVK/ZnO heterostructure is realized.
Optionally, the aluminum electrode 5 includes a first aluminum electrode 51, a second aluminum electrode 52, and a third aluminum electrode 53.
The first aluminum electrode, the second aluminum electrode and the third aluminum electrode are sequentially positioned on the upper surface of the polyvinylcarbazole layer from left to right.
In order to reduce the influence of the aluminum electrode on the photoelectric material, the aluminum electrode needs to be as small as possible without affecting the conductivity.
Optionally, the zinc oxide layer has a thickness of 20nm.
It should be noted that the thickness of the zinc oxide layer is set by those skilled in the art according to the service requirement. Multiple experiments prove that the thickness of the zinc oxide layer is preferably 20nm.
In conclusion, the zinc oxide functional layer with high stability and high electron mobility is introduced on the basis of the photoelectric memristor with the Al/PVK/W/Si structure, so that the stability, the repeatability and the like of the PVK photoelectric memristor can be improved.
Further, the beneficial effects of the invention are verified based on experimental tests.
Using an I-V test probe station PSM-1000, electrifying a probe of a top electrode (aluminum electrode) and a bottom electrode (silicon substrate) under a microscope to perform I-V test, and referring to FIG. 4, a schematic diagram of a test result of a conventional PVK photoelectric memristor is provided in an embodiment of the present invention; referring to fig. 5, a schematic diagram of a test result of a novel photovoltaic memristor with a PVK/ZnO heterostructure according to an embodiment of the present invention is shown.
As can be seen from fig. 4 and 5, both PVK photo memristors exhibit distinct memristive characteristics, and the introduction of a zinc oxide functional layer, while increasing the thickness of the functional layer between the electrodes, does not result in a reduction of the operating current in the new PVK photo memristor, which benefits from the high electron mobility of the zinc oxide material. As can be seen from comparison of fig. 4 and fig. 5, the 5-time repeated scanning result shows that the repeatability and stability of the novel PVK photoelectric memristor provided by the present invention are greatly improved and improved compared with those of the conventional PVK photoelectric memristor, and the calculation result of the current error value shows that the use of the zinc oxide functional layer reduces the error current in the memristor by one order of magnitude, which accords with the expected result of us, that is, the problems of poor repeatability, unstable high-low resistance state transition, sensitivity to temperature change, etc. of the conventional organic photoelectric memristor can be solved by introducing the zinc oxide material with clear memristor mechanism and high stability.
Example two
The invention provides a preparation method of a novel photoelectric memristor based on a PVK/ZnO heterostructure, which comprises the following steps:
step 1: and (3) obtaining a tungsten electrode layer on the upper surface of the silicon substrate layer through deposition treatment.
Optionally, the step 1 includes:
and carrying out deposition treatment on the upper surface of the silicon substrate layer by using a magnetron sputtering device to obtain the tungsten electrode layer.
For example, the magnetron sputtering device is MSP-3470x.
Step 2: and according to preset sputtering parameters, a zinc oxide layer is obtained on the upper surface of the tungsten electrode layer through sputtering treatment.
Optionally, the preset sputtering parameters include preset targets, preset sputtering time and preset sputtering power.
Optionally, the preset target is: a ZnO ceramic target with purity of 99.99 percent; the preset sputtering time is 30 minutes; the preset sputtering power is 77W.
The invention can flexibly control the internal characteristics of the sputtered film by presetting sputtering parameters, for example, the thickness of the zinc oxide layer can be changed by changing the preset sputtering time.
Step 3: and baking and annealing the upper surface of the zinc oxide layer to obtain the polyvinylcarbazole layer.
Optionally, the step 3 includes:
step 3-1: and spin-coating a polyvinylcarbazole solution dissolved in 1, 2-dichloroethane on the upper surface of the zinc oxide layer.
Step 3-2: and baking the zinc oxide layer after spin coating.
Step 3-3: and (3) annealing the baked zinc oxide layer to obtain the polyvinylcarbazole layer on the upper surface of the zinc oxide layer.
Step 4: and sputtering the upper surface of the polyvinylcarbazole layer through a metal mask plate to obtain an aluminum electrode so as to finish the preparation of the memristor.
The novel photoelectric memristor based on the PVK/ZnO heterostructure prepared by the method can be formed by depositing MSP-3470x on a bare silicon substrate by using a magnetron sputtering device, a zinc oxide functional layer is prepared on a tungsten electrode by changing a target material, sputtering time and sputtering power in the magnetron sputtering device, PVK solution dissolved in 1, 2-dichloroethane is respectively spin-coated on the upper surface of ZnO, baking film formation is carried out, annealing treatment is carried out to obtain a compact PVK film, and finally, a metal mask plate is utilized to sputter deposit an aluminum electrode to complete the preparation of the photoelectric memristor.
On the whole, the invention introduces the zinc oxide functional layer with high stability and high electron mobility on the basis of the traditional PVK photoelectric memristor, and can improve the memristor performance of the PVK photoelectric memristor.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (7)
1. The preparation method of the photoelectric memristor based on the PVK/ZnO heterostructure is characterized by comprising the following steps:
step 1: a tungsten electrode layer is obtained on the upper surface of the silicon substrate layer through deposition treatment;
step 2: according to preset sputtering parameters, a zinc oxide layer is obtained on the upper surface of the tungsten electrode layer through sputtering treatment;
step 3: baking and annealing the upper surface of the zinc oxide layer to obtain a polyvinylcarbazole layer;
step 4: sputtering the upper surface of the polyvinylcarbazole layer through a metal mask plate to obtain an aluminum electrode so as to finish the preparation of the memristor;
the step 3 comprises the following steps:
spin-coating a polyvinylcarbazole solution dissolved in 1, 2-dichloroethane on the upper surface of the zinc oxide layer;
baking the spin-coated zinc oxide layer;
and (3) annealing the baked zinc oxide layer to obtain the polyvinylcarbazole layer on the upper surface of the zinc oxide layer.
2. The method according to claim 1, wherein the step 1 comprises:
and carrying out deposition treatment on the upper surface of the silicon substrate layer by using a magnetron sputtering device to obtain the tungsten electrode layer.
3. The method of claim 1, wherein the predetermined sputtering parameters comprise a predetermined target, a predetermined sputtering time, a predetermined sputtering power.
4. A method according to claim 3, wherein the pre-set target is a ZnO ceramic target having a purity of 99.99%; the preset sputtering time is 30 minutes; the preset sputtering power is 77W.
5. A photovoltaic memristor based on a PVK/ZnO heterostructure prepared by the method of any one of claims 1 to 4, characterized in that the photovoltaic memristor comprises, in order from bottom to top:
a silicon substrate, a tungsten electrode layer, a zinc oxide layer, a polyvinylcarbazole layer and an aluminum electrode.
6. The optoelectronic memristor of claim 5, wherein the aluminum electrode comprises a first aluminum electrode, a second aluminum electrode, and a third aluminum electrode;
the first aluminum electrode, the second aluminum electrode and the third aluminum electrode are sequentially positioned on the upper surface of the polyvinylcarbazole layer from left to right.
7. The optoelectronic memristor of claim 5, wherein the zinc oxide layer has a thickness of 20nm.
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