CN111725401A - Optical storage composite memristor and preparation method and application thereof - Google Patents

Optical storage composite memristor and preparation method and application thereof Download PDF

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CN111725401A
CN111725401A CN202010611824.8A CN202010611824A CN111725401A CN 111725401 A CN111725401 A CN 111725401A CN 202010611824 A CN202010611824 A CN 202010611824A CN 111725401 A CN111725401 A CN 111725401A
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memristor
upper electrode
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film layer
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CN111725401B (en
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张磊
汪炼成
司佳威
肖灿城
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Central South University
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Abstract

The invention discloses an optical storage composite memristor and a preparation method and application thereof, and the optical storage composite memristor comprises a photoelectric detector and a pn heterostructure analog memristor, wherein the photoelectric detector and the pn heterostructure analog memristor share a substrate, the photoelectric detector sequentially comprises a photoelectric conversion layer and a metal upper electrode from the substrate to the top, and the pn heterostructure analog memristor sequentially comprises a metal lower electrode, a p-type oxide thin film layer, an n-type oxide thin film layer and a metal upper electrode from the substrate to the top; the metal upper electrode of the photoelectric detector is connected with the metal upper electrode of the pn heterostructure analog memristor. The analog memristor (synapse device) and the photoelectric detector are compounded to prepare the composite memristor, the voltage and the resistance value of the two ends of the analog memristor can be accurately adjusted through the photoconductive effect of different light-excited image sensors, and finally, the accurate adjustment and control of the resistance value of the memristor by the optical signal can be realized, so that the more real artificial visual memory bionic simulation is further realized.

Description

Optical storage composite memristor and preparation method and application thereof
Technical Field
The invention belongs to the technical field of optical information storage, and particularly relates to an optical storage composite memristor and a preparation method and application thereof.
Background
In recent thirty years, artificial intelligence has rapidly developed, and is called the three-century-21 top technology together with genetic engineering and nanoscience. The method is widely applied to the subject fields of machine vision, fingerprint identification, face identification, retina identification, palm print identification, intelligent search, game, intelligent control, robotics and the like, and achieves fruitful results. The realization of bionic simulation of human basic functions by using multifunctional integrated electronic devices has been a hot point of artificial intelligence research.
Human senses the external objective world through the eyes, ears, nose, mouth, tongue and other organs, wherein more than 80 percent of information comes from vision. The human visual system senses external light information by using eyes to obtain image information, and stores the sensed image information into a brain nervous system. The image sensor has the function similar to eyes, and utilizes a photoresponse semiconductor to realize photoelectric conversion, such as a photodiode, a phototransistor and the like, generates electron-hole pairs under the stimulation of optical signals, and converts the electron-hole pairs into current signals with corresponding proportional relations, thereby realizing the collection and detection of the optical signals. However, when the external light signal stimulus is removed, the sensed image information disappears immediately, and the image sensor cannot store the sensed information. The memristor is used as a new storage device, has the characteristics of dynamically adjusting the resistance value along with the flowing charges, having the intrinsic self-learning capability, integrating storage and operation, and the like. Meanwhile, the dimension of the memristor can be in the nanometer range, and a neural network which is similar to the brain capacity is hopefully realized in a single chip, so that the memristor is considered to be an ideal choice for realizing artificial nerve synapses. Therefore, to build a more realistic artificial visual memory device, a reasonable integration of the image sensor with the memristor may be a viable and efficient approach. However, the existing artificial visual memory system adopts a digital memristor, only has two or multiple resistance states of high resistance and low resistance, and generally can only realize the long-term memory of image information unless the memristor is restored by electric stimulation.
Disclosure of Invention
The invention aims to provide an optical storage composite memristor, and a preparation method and application thereof.
The optical storage composite memristor comprises a photoelectric detector and a pn heterostructure analog memristor, wherein the photoelectric detector and the pn heterostructure analog memristor share a substrate, the photoelectric detector sequentially comprises a photoelectric conversion layer and a metal upper electrode from the substrate to the top, and the pn heterostructure analog memristor sequentially comprises a metal lower electrode, a p-type oxide thin film layer, an n-type oxide thin film layer and a metal upper electrode from the substrate to the top; the metal upper electrode of the photoelectric detector is connected with the metal upper electrode of the pn heterostructure analog memristor, so that the photoelectric detector and the analog memristor are connected in series.
The substrate is a quartz or sapphire substrate; the photoelectric conversion layer is Ga2O3A thin film layer having a thickness of 50 to 200 nm; the metal upper electrode of the photoelectric detector is one or more of Ni, Al, Au or Pt.
The metal lower electrode is one of Ni, Al, Au or Pt, and the thickness of the metal lower electrode is 100-200 nm; the p-type oxide film layer is NiO or CuAlO2A thin film layer with a thickness of 50-100 nm; thin n-type oxideThe film layer is ZnO or TiO2A thin film layer with a thickness of 50-100 nm; the metal upper electrode of the analog memristor is one or a combination of Ni, Al, Au or Pt.
The metal upper electrode of the photoelectric detector is the same as that of the pn heterostructure analog memristor and comprises a square shape and an interdigital shape, and the thickness of the metal upper electrode is 100-200 nm.
The preparation method of the composite memristor comprises the following steps:
(1) firstly, photoetching patterns on a substrate, and growing a photoelectric conversion layer on the substrate by using a magnetron sputtering method;
(2) carrying out alignment by using a photoetching machine, and then growing a metal lower electrode by using a magnetron sputtering method;
(3) growing a p-type oxide thin film layer and an n-type oxide thin film layer on the lower metal electrode at room temperature in sequence by using a magnetron sputtering method;
(4) etching the upper electrode patterns of the analog memristor and the photoelectric detector by using an ultraviolet photoetching machine sleeve, and then evaporating the metal upper electrode by using a thermal evaporation method
In the step 1), the magnetron sputtering temperature is 200 ℃.
In the steps 2) and 3), the magnetron sputtering temperature is room temperature.
In the step 4), the vacuum degree of thermal evaporation is 3 × 10-4Pa。
The composite memristor is applied as an artificial visual memory device.
The principle of the invention is as follows: when the optical storage composite memristor device is in an initial state, Ga2O3The image sensor has higher resistance value, and the electric pulse signal mainly acts on Ga2O3A film. When Ga is irradiated by light of different wavelengths and intensities2O3When the image sensor is used, a photoconductive effect is generated to reduce the resistance of the image sensor, and the redistribution of electric pulse signals is realized according to the previously determined ratio of the resistance values of the two devices, so that the voltage applied to the two ends of the analog memristor can be accurately calculated, and the regulation and control of the resistance value of the analog memristor by light are realizedFinally, more real artificial visual memory bionic simulation is realized.
The invention has the beneficial effects that: 1) the analog memristor (synapse device) and the photoelectric detector are compounded to prepare the composite memristor, the voltage and the resistance value of the two ends of the analog memristor can be accurately adjusted through the photoconductive effect of different light-excited image sensors, and finally, the accurate adjustment and control of the resistance value of the memristor by the optical signal can be realized, so that the more real artificial visual memory bionic simulation is further realized. 2) The storage part of the invention selects an analog memristor (a nerve synapse device), excites the synapse device through the optical signal, realizes the storage of the optical signal by utilizing the synapse device, and can better reflect the memory forgetting rule of human vision to the optical information.
Drawings
FIG. 1 is a schematic diagram of a structure of an optical storage composite memristor according to the present invention, wherein a black line of a metal top electrode can be considered as a conductive line;
fig. 2 is a top view of a scanning electron microscope of the optical storage composite memristor prepared in embodiment 1;
FIG. 3 is a working circuit diagram of the composite memristor of the present disclosure;
FIG. 4 is a 250nm illumination time dependence curve of series current of the composite memristive device under 3V bias voltage of the device prepared in example 1;
FIG. 5 is a graph of the relaxation process of the simulated memristor after 5s of irradiation of the device prepared in example 1 under a 5V bias at a wavelength of 250 nm;
FIG. 6 is a graph of the relaxation process of the simulated memristor after irradiation for 10s for the device fabricated in example 1 under a 5V bias at a wavelength of 250 nm.
Wherein: 1-a substrate; 2-photoelectric conversion layer, 3-metal lower electrode, 4-p type oxide thin film layer, 5-n type oxide thin film layer and 6-metal upper electrode.
Detailed Description
Example 1
The structure diagram of the optical storage composite memristor in the embodiment is shown in fig. 1, and as can be seen from fig. 1, the composite memristor mainly comprises 2 parts, including a photoelectric detector and a pn heterostructure analog memristor, the photoelectric detector and the pn heterostructure analog memristor share one substrate 1, the photoelectric detector sequentially comprises a photoelectric conversion layer 2 and a metal upper electrode 6 from the substrate 1, and the pn heterostructure analog memristor sequentially comprises a metal lower electrode 3, a p-type oxide thin film layer 4, an n-type oxide thin film layer 5 and a metal upper electrode 6 from the substrate 1; the metal upper electrode of the photoelectric detector and the metal upper electrode of the pn heterostructure analog memristor are connected in series.
In the specific structure of the embodiment, the substrate 1 is a quartz substrate, the photoelectric conversion layer 2 is a gallium oxide thin film layer, the metal lower electrode 3 is a metal Ni film layer, and the p-type oxide thin film layer 4 is a NiO thin film layer; the n-type oxide thin film layer 5 is a ZnO thin film layer, and the metal upper electrode 6 is a Ni thin film.
The preparation method of the optical storage composite memristor comprises the following steps:
1) cleaning a quartz substrate by a physical or chemical method, respectively cleaning the quartz substrate by acetone, alcohol and deionized water, and then blowing the substrate by nitrogen;
2) using ultraviolet photoetching technology, forming a square area on a quartz substrate through gluing, exposing and developing operations, and then depositing a layer of Ga by using a magnetron sputtering method2O3Film with thickness of about 60nm is prepared under the condition of background vacuum lower than 4 × 10-4Pa, sputtering gas: high purity argon (Ar), growth pressure: 2Pa, sputtering target: ga2O3Ceramic, sputtering power: 80W, substrate temperature: 200 degrees.
3) Stripping, removing spin-coated glue, performing alignment, performing gluing, exposing and developing to form another rectangular region on the quartz substrate, and depositing a Ni film as the lower metal electrode of the memristor with a thickness of about 100nm by magnetron sputtering under the specific preparation condition that the background vacuum is lower than 4 × 10-4Pa, sputtering gas: high purity argon (Ar), growth pressure: 2Pa, sputtering target: au ceramic, sputtering power: 60W, substrate temperature: and (4) room temperature.
4) Then depositing p-type NiO and NiO on the Ni metal lower electrode by a magnetron sputtering method in sequenceThe preparation conditions of the n-type ZnO film and the NiO film with the thickness of both the two layers are that the background vacuum is lower than 4 × 10-4Pa, sputtering gas: high purity oxygen (O)2) Growth pressure of 2Pa, sputtering target of NiO ceramic, sputtering power of 80W, substrate temperature of room temperature, and preparation conditions of ZnO film, wherein the background vacuum is lower than 4 × 10-4Pa, sputtering gas: high purity argon (Ar), growth pressure: 2Pa, sputtering target: ZnO ceramic, sputtering power: 80W, substrate temperature: and (4) room temperature.
5) Stripping, removing spin-coated glue, performing alignment, performing gluing, exposure and development to form interdigital and square electrodes, evaporating a Ni film with the thickness of 100nm by using a thermal evaporation method, and respectively using the Ni film as a metal upper electrode of a photoelectric detector and an analog memristor, wherein the thermal evaporation vacuum degree is 3 × 10-4Pa, so as to construct a photoelectric detector and analog memristor series device, and the specific structure is shown in FIG. 2.
And finally, stripping, removing the spin-coated glue, and preparing to obtain the composite memristor.
The working circuit diagram of the optical storage composite memristor prepared in the embodiment is shown in fig. 3. The performance of the optical storage composite memristor is tested according to the circuit diagram in FIG. 3, and the result is shown as 4-6. :
when a constant bias voltage of 3V was applied to the device, the current in the series circuit was measured using a semiconductor parameter tester to investigate the time-dependent characteristics of the device under 250nm light irradiation, as shown in FIG. 4. The initial current is smaller than about 200pA, and when light of 250nm irradiates Ga2O3The series current will increase when on the photodetector. For conventional Ga2O3The photodetector, when light is applied to the device, increases the device current to a fixed value, and when the light source is turned off, decreases the current to an initial resistance value. For the composite memristive device, as the illumination time increases, the current shows a gradually increasing characteristic; when light shines on the photoelectric detector, the resistance of the detector is reduced, the voltage on two sides of the memristor is increased, and the resistance of the memristor is reduced. Thus, FIG. 4 demonstrates that illumination can be effectively modulatedMemristor resistance values.
After the artificial visual memory device 5s is irradiated by light with the wavelength of 250nm under the 5V bias voltage, the current at two ends of the memristor is read by the 0.05V bias voltage, as shown in FIG. 5. Compared with a memristor without light excitation, the current of the light-excited memristor is increased, and the fact that the compound memristor realizes the memory and forgetting of the optical signal is shown.
After the 5V bias 250nm wavelength light irradiates the artificial visual memory device 10s, the current across the memristor is read with the 0.05V bias, as shown in FIG. 6. It can be seen that for longer illumination time, the memristor can be excited to a larger current value, and a longer time is required for the current to return to the initial value; this is consistent with the human visual memory and amnesia characteristics.

Claims (9)

1. The optical storage composite memristor is characterized by comprising a photoelectric detector and a pn heterostructure analog memristor, wherein the photoelectric detector and the pn heterostructure analog memristor share a substrate, the photoelectric detector sequentially comprises a photoelectric conversion layer and a metal upper electrode from the substrate to the top, and the pn heterostructure analog memristor sequentially comprises a metal lower electrode, a p-type oxide thin film layer, an n-type oxide thin film layer and a metal upper electrode from the substrate to the top; the metal upper electrode of the photoelectric detector is connected with the metal upper electrode of the pn heterostructure analog memristor, so that the photoelectric detector and the analog memristor are connected in series.
2. The optical storage composite memristor according to claim 1, wherein the substrate is a quartz or sapphire substrate; the photoelectric conversion layer is Ga2O3A thin film layer having a thickness of 50 to 200 nm; the metal upper electrode of the photoelectric detector is one or more of Ni, Al, Au or Pt.
3. The optical storage composite memristor according to claim 2, wherein the metal bottom electrode is one of Ni, Al, Au or Pt, and the thickness is 100-200 nm; the p-type oxide film layer is NiO or CuAlO2A thin film layer with a thickness of 50-100 nm; the n-type oxide film layer is ZnO or TiO2A thin film layer with a thickness of 50-100 nm; the metal upper electrode of the analog memristor is one or a combination of Ni, Al, Au or Pt.
4. The optical storage composite memristor according to claim 3, wherein the metal upper electrode of the photodetector is the same as the metal upper electrode of the pn heterostructure analog memristor, and comprises a square shape and an interdigital shape, and the thickness of the metal upper electrode is 100-200 nm.
5. A preparation method of the optical storage composite memristor according to any one of claims 1 to 4, comprising the following steps:
(1) firstly, photoetching patterns on a substrate, and growing a photoelectric conversion layer on the substrate by using a magnetron sputtering method;
(2) carrying out alignment by using a photoetching machine, and then growing a metal lower electrode by using a magnetron sputtering method;
(3) growing a p-type oxide thin film layer and an n-type oxide thin film layer on the lower metal electrode at room temperature in sequence by using a magnetron sputtering method;
(4) and etching upper electrode patterns of the analog memristor and the photoelectric detector by using an ultraviolet photoetching machine sleeve, and then evaporating the metal upper electrode by using a thermal evaporation method.
6. The method for preparing the optical storage composite memristor according to claim 5, wherein in the step 1), the magnetron sputtering temperature is 200 ℃.
7. The method for preparing the optical storage composite memristor according to claim 5, wherein in the steps 2) and 3), the magnetron sputtering temperature is room temperature.
8. The preparation method of the optical storage composite memristor according to claim 5, wherein in the step 4), the vacuum degree of thermal evaporation is 3 × 10-4Pa。
9. The application of the optical storage composite memristor according to claim 1 as an artificial visual memory device.
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CN113346017A (en) * 2021-05-21 2021-09-03 河北大学 Artificial visual nervous system based on full memristor and preparation method and application thereof
CN113675223A (en) * 2021-05-17 2021-11-19 松山湖材料实验室 Photoelectric synapse device and application thereof
CN114203918A (en) * 2021-12-09 2022-03-18 西北工业大学 Novel photoelectric memristor based on PVK/ZnO heterostructure

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