CN111725196A - 一种高温原位紫外探测系统 - Google Patents

一种高温原位紫外探测系统 Download PDF

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CN111725196A
CN111725196A CN202010611852.XA CN202010611852A CN111725196A CN 111725196 A CN111725196 A CN 111725196A CN 202010611852 A CN202010611852 A CN 202010611852A CN 111725196 A CN111725196 A CN 111725196A
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汪炼成
彭程
黄强
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Changsha Anmuquan Intelligent Technology Co ltd
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Central South University
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Abstract

本发明这种高温原位紫外探测系统，包括有散热模块和原位日盲紫外探测器；散热模块会组成一个腔体，原位日盲紫外探测器包括有SiCMOSFET芯片、续流二极管FWD芯片、紫外探测器芯片、多块DBC板、集电极、发射极、栅极以及相对应的端子；其中SiCMOSFET芯片、续流二极管FWD芯片安装于散热模块的腔体内部，SiCMOSFET芯片、续流二极管FWD芯片通过焊接的方式固定于DBC板上，DBC板与散热模块的焊料层连接；紫外探测器芯片位于腔体外部，紫外探测器芯片通过焊接的方式固定于DBC板上，DBC板固定散热模块的顶部；SiCMOSFET芯片、续流二极管FWD芯片、紫外探测器芯片、DBC板、集电极、发射极子、栅极之间通过电路进行互连。本发明采用AlGaN基紫外探测器芯片最高使用温度可达到300℃。

Description

一种高温原位紫外探测系统
技术领域
本发明属于功率模块集成技术领域,具体涉及一种高温原位紫外探测系统。
背景技术
航天器发动机喷流向外部真空环境自由膨胀会形成真空羽流受羽流效应影响航天器太阳能电池板功率和热控涂层表面反射率会降低严重时整个航天任务可能会失败。因此在航天器设计中必须考虑羽流效应的影响为了直接掌握发动机羽流的辐射特性可以进行在轨羽流监视但考虑到不能影响发动机及航天活动的正常运行因此非接触式的光谱遥感观测是最好的选择，其中紫外光谱测量能够获得喷流的紫外辐射特性为进一步研究羽流提供更加详实的数据。
在飞机汽车发动机运行过程中温度通常会超过200℃，高于设备所用的传统微芯片一般能耐受的最高温度。在该环境的测量中，由于受制于集成电路的温度现状，传统的传感器多采用传感器与变送器电路分离的结构设计。传统的CMOS芯片有时能耐受250℃的高温，但其性能与可靠性会迅速下降。还有一种方法是对热敏感的微芯片实施持续冷却，但是很难实现。
发明内容
本发明的目的是提供一种在高温下可实时检测发动机燃烧状态的高温原位紫外探测系统。
本发明这种高温原位紫外探测系统，包括有散热模块和原位日盲紫外探测器；散热模块会组成一个腔体，原位日盲紫外探测器包括有SiCMOSFET芯片、续流二极管FWD芯片、紫外探测器芯片、多块DBC板、集电极、发射极、栅极以及相对应的端子；其中SiCMOSFET芯片、续流二极管FWD芯片安装于散热模块的腔体内部，SiCMOSFET芯片、续流二极管FWD芯片通过焊接的方式固定于DBC板上，DBC板与散热模块的焊料层连接；紫外探测器芯片位于腔体外部，紫外探测器芯片通过焊接的方式固定于DBC板上，DBC板固定散热模块的顶部；散热模块包括有单面散热模块和双面散热模块；SiCMOSFET芯片、续流二极管FWD芯片、紫外探测器芯片、DBC板、集电极、发射极子、栅极之间通过电路进行互连。
所述的单面散热模块，包括有底部的单面散热层、树脂腔体外壳以及腔体内部填充的硅胶，其中底部为单面散热层从下到上为Al基金刚石基板和覆铜陶瓷基板DBC，覆铜陶瓷基板DBC通过焊料层与高温原位日盲紫外探测器的DBC板连接。
所述的双面散热膜块，包括有底部和顶部的散热层以及两个散热层构成的腔体内填充硅胶，底部散热层从下到上为Al基金刚石基板和覆铜陶瓷基板DBC，顶部的散热层上到下为Al基金刚石基板和覆铜陶瓷基板DBC，顶部散热层和底部散热层的覆铜陶瓷基板DBC分别通过焊料层与高温原位日盲紫外探测器的上表面和下表面连接。
所述的电路互连的方式包括有引线键合、印刷电路和倒装焊接中的一种或多种；原位日盲紫外探测器中有四块DBC板；紫外探测器芯片为AlGaN基紫外探测芯片。
所述的散热模块为双面散热模块，电路互连的方式为全焊接无引线的高温原位紫外探测系统的结构为：底部散热层由下到上为Al基金刚石基板和覆铜陶瓷基板DBC，覆铜陶瓷基板DBC上为焊料层；
焊料层上有第一块DBC板上，在第一块DBC板上分别焊接FWD芯片和SiCMOSFET芯片，接着在FWD芯片上表面和SiCMOSFET芯片的部分上表面焊接第二块DBC板，SiCMOSFET芯片另一部分上表面焊接第三块DBC板，并在第三块DCB板上引出栅极至顶部散热层外，第二块与第三块DBC板之间不接触；
在第二块和第三块DBC板上通过焊料层与顶部散热层连接，顶部散热层由上到下为Al基金刚石基板和覆铜陶瓷基板DBC；
在顶部散热层的Al基金刚石基板引出的栅极位置安装第四块DCB板，栅极与第四块DCB板是接触的，在第四块DCB板上焊接紫外探测芯片，并在紫外探测芯片顶部引出栅极端子；
在第一块DCB板上引出集电极及相应的端子，在第二块DCB板上引出发射电极及相应的端子；集电极端子和发射电极端子都在散热层组成腔体外面；
在上述结构组成的腔体内填充硅胶，即获得高温原位紫外探测系统。
所述的散热模块为单面散热模块，电路互连的方式为引线键合的高温原位紫外探测系统的结构为：
散热模块包括底部散热层和树脂腔体外壳，树脂腔体外壳以底部散热层为基底；底部散热层由下到上为Al基金刚石基板和覆铜陶瓷基板DBC，覆铜陶瓷基板DBC上为焊料层；
焊料层上有3块DBC板，三块DBC板之间不接触，在第二块DBC板上焊接分别焊接FWD芯片和SiCMOSFET芯片，第三块DBC板上引出栅极至顶部树脂腔体外壳外，在第一块DCB板引出发射极端子至顶部树脂腔体外壳外，第二块DCB板引出集电极至顶部树脂腔体外壳外；在树脂腔体外壳引出栅极的位置安装第四块DBC板，第四块DBC板与栅极是接触的，在第四块DBC板上焊接紫外探测器芯片，并在紫外探测芯片顶部引出栅极端子；
第一块DCB板通过引线与FWD芯片连接，集电极分别通过引线与FWD芯片和SiCMOSFET芯片连接，SiCMOSFET芯片通过引线与第三块DCB板连接；
集电极端子和发射电极端子都在树脂腔体外壳外部；
向树脂腔体内填充硅胶，即得高温原位紫外探测系统。
所述的散热模块为双面散热模块，电路互连的方式为引线键合与焊接的组合的高温原位紫外探测系统的结构为：
底部散热层由下到上为Al基金刚石基板和覆铜陶瓷基板DBC，覆铜陶瓷基板DBC上为焊料层；
焊料层上2块DBC板，2块DBC之间不接触，在第一块DBC板上分别焊接FWD芯片和SiCMOSFET芯片，接着在FWD芯片上表面和SiCMOSFET芯片部分上表面焊接第三块DBC板；SiCMOSFET芯片另一部分上表面与第二块DBC板通过引线连接，在第二块DCB板上引出栅极至顶部散热层外，
在第一块DBC板上引出集电极及相应的端子；第三块DBC板上引出发射极及相应的端子；
在第三块DBC板上通过焊料层与顶部散热层连接，顶部散热层由上到下为Al基金刚石基板和覆铜陶瓷基板DBC；
在顶部散热层的Al基金刚石基板上引出栅极的位置，安装第四块DCB板，栅极与第四块DCB板是接触的，在第四块DCB板上焊接紫外探测芯片，并在紫外探测芯片顶部引出栅极端子；
集电极端子和发射电极端子都在散热层组成腔体外面；
在上述散热模块组成的腔体内填充硅胶，即获得高温原位紫外探测系统。
(在散热模块和原位日盲紫外探测器都会有覆铜陶瓷基板DBC，为了便于区分覆铜陶瓷基板DBC，散热层的覆铜陶瓷基板DBC就用原名，原位日盲紫外探测器中的覆铜陶瓷基板DBC简称为DBC板)
本发明的原理：本发明利用AlGaN基紫外探测芯片和SiC基MOSFET芯片具有耐高温的特性，可以在高温环境中原位读出光响应电流，因而可发动机燃烧过程的进行监测；但是受燃烧状态的影响，单一的芯片对检测的稳定性不佳，为了进一步提高检测的准确性，我们将SiCFWD芯片和SiCMOSFET芯片进行进一步的集成，为了保证SiCFWD芯片和SiCMOSFET芯片不受高温的影响，专门设计的散热模块，进一步保证检测的稳定性。
本发明的有益效果：本发明通过AlGaN基紫外探测器芯片实现高温原位日盲紫外探测，并与用SiC MOSFET芯片和FWD芯片构成原位检测控制系统，可以原位实时监控汽车、飞机和火箭等发动机的燃烧状态。本发明采用AlGaN基紫外探测器芯片最高使用温度可达到300℃。
附图说明
图1实施例1中的高温原位紫外探测系统的结构图；
图2实施例2中的高温原位紫外探测系统的结构图；
图3适合私利3中的高温原位紫外探测系统的结构图。
其中，1-Al基金刚石基板，2-散热模块中的覆铜陶瓷基板DBC；3-焊料层；4-树脂腔体外科，5-硅胶填充体；6-原位日盲紫外探测器中的覆铜陶瓷基板DBC7-FWD芯片，8-SiCMOSFET芯片，9-紫外探测器芯片，10-发射极，11-集电极，12-栅极，13-引线；61-第一块DBC板，62-第二块DBC板，63-第三块DBC板，64-第四块DBC板；101-发射极端子，111-集电极端子，121-栅极端子。
具体实施方式
实施例1
本实施例提供的高温原位紫外探测系统：散热模块为双面散热模块，电路互连的方式为全焊接无引线；具体结构如图1所示。
所述的散热模块为双面散热模块，电路互连的方式为全焊接无引线的高温原位紫外探测系统的结构为：底部散热层由下到上为Al基金刚石基板1和覆铜陶瓷基板DBC 2，覆铜陶瓷基板DBC 2上为焊料层3；
焊料层3上有第一块DBC板61上，在第一块DBC板61上分别焊接FWD芯片7和SiCMOSFET芯片8，接着在FWD芯片7上表面和SiCMOSFET芯片8的部分上表面焊接第二块DBC板62，SiCMOSFET芯片8另一部分上表面焊接第三块DBC板63，并在第三块DCB板63上引出栅极12至顶部散热层外，第二块与第三块DBC板之间不接触；
在第二块和第三块DBC板上通过焊料层3与顶部散热层连接，顶部散热层由上到下为Al基金刚石基板1和覆铜陶瓷基板DBC 2；
在顶部散热层的Al基金刚石基板1引出的栅极12位置处安装第四块DCB板64，栅极与第四块DCB板64是接触的，在第四块DCB板64上焊接紫外探测芯片9，并在紫外探测芯片9顶部引出栅极端子121；
在第一块DCB板上引出集电极11及相应的端子111，在第二块DCB板上引出发射电极10及相应的端子101；集电极端子111和发射电极端子101都在散热层组成腔体外面；
在上述结构组成的腔体内填充硅胶5，即获得高温原位紫外探测系统。
本实施例中采用紫外探测器芯片9为AlGaN基紫外探测芯片。
实施例2
本实施例提供的高温原位紫外探测系统：散热模块为单面散热模块，电路互连的方式为引线键合，具体结构如图2所示：
散热模块包括底部散热层和树脂腔体外壳4，树脂腔体外壳4以底部散热层为基底；底部散热层由下到上为Al基金刚石基板1和覆铜陶瓷基板DBC 2，覆铜陶瓷基板DBC2上为焊料层3；
焊料层上有3块DBC板6，三块DBC板6之间不接触，在第二块DBC板62接分别焊接FWD芯片7和SiCMOSFET芯片8，第三块DBC板63上引出栅极12至顶部树脂腔体外壳4外，在第一块DCB板61引出发射极端子101至顶部树脂腔体外壳4外，第二块DCB板62引出集电极11至顶部树脂腔体外壳4外；在树脂腔体外壳4引出栅极12的位置安装第四块DBC板64，第四块DBC板64与栅极12是接触的，在第四块DBC板64上焊接紫外探测器芯片9，并在紫外探测芯片9顶部引出栅极端子121；
第一块DCB板61通过引线13与FWD芯片7连接，集电极11分别通过引线13与FWD芯片7和SiCMOSFET芯片8连接，SiCMOSFET芯片8通过引线13与第三块DCB板63连接；
集电极端子111和发射电极端子101都在树脂腔体外壳外部；
向树脂腔体内填充硅胶5，即得高温原位紫外探测系统。
本实施例中采用紫外探测器芯片9为AlGaN基紫外探测芯片。
实施例3
本实施例提供的高温原位紫外探测系统：散热模块为双面散热模块，电路互连的方式为引线键合与焊接的组合，具体结构如图3所示：
底部散热层由下到上为Al基金刚石基板1和覆铜陶瓷基板DBC 2，覆铜陶瓷基板DBC 2上为焊料层3；
焊料层3上2块DBC板6，2块DBC 6之间不接触，在第一块DBC板61上分别焊接FWD芯片7和SiCMOSFET芯片8，接着在FWD芯片7上表面和SiCMOSFET芯片8部分上表面焊接第三块DBC板63；SiCMOSFET芯片8另一部分上表面与第二块DBC板62通过引线连接，在第二块DCB板62上引出栅极12至顶部散热层外，
在第一块DBC板61上引出集电极11及相应的端子111；第三块DBC板63上引出发射极10及相应的端子101；
在第三块DBC板63上通过焊料层3与顶部散热层连接，顶部散热层由上到下为Al基金刚石基板1和覆铜陶瓷基板DBC 2；
在顶部散热层的Al基金刚石基板1上引出栅极12的位置，安装第四块DCB板64，栅极12与第四块DCB板64是接触的，在第四块DCB板64上焊接紫外探测芯片9，并在紫外探测芯片9顶部引出栅极端子121；
集电极端子111和发射电极端子101都在散热层组成腔体外面；
在上述散热模块组成的腔体内填充硅胶5，即获得高温原位紫外探测系统。
本实施例中采用紫外探测器芯片9为AlGaN基紫外探测芯片。

Claims (7)

1.一种高温原位紫外探测系统，其特征在于，包括有散热模块和原位日盲紫外探测器；散热模块会组成一个腔体，原位日盲紫外探测器包括有SiCMOSFET芯片、续流二极管FWD芯片、紫外探测器芯片、多块DBC板、集电极、发射极、栅极以及相对应的端子；其中SiCMOSFET芯片、续流二极管FWD芯片安装于散热模块的腔体内部，SiCMOSFET芯片、续流二极管FWD芯片通过焊接的方式固定于DBC板上，DBC板与散热模块的焊料层连接；紫外探测器芯片位于腔体外部，紫外探测器芯片通过焊接的方式固定于DBC板上，DBC板固定散热模块的顶部；散热模块包括有单面散热模块和双面散热模块；SiCMOSFET芯片、续流二极管FWD芯片、紫外探测器芯片、DBC板、集电极、发射极子、栅极之间通过电路进行互连。
2.根据权利要求1所述的高温原位紫外探测系统，其特征在于，所述的单面散热模块，包括有底部的单面散热层、树脂腔体外壳以及腔体内部填充的硅胶，其中底部为单面散热层从下到上为Al基金刚石基板和覆铜陶瓷基板DBC，覆铜陶瓷基板DBC通过焊料层与高温原位日盲紫外探测器的DBC板连接。
3.根据权利要求1所述的高温原位紫外探测系统，其特征在于，所述的双面散热膜块，包括有底部和顶部的散热层以及两个散热层构成的腔体内填充硅胶，底部散热层从下到上为Al基金刚石基板和覆铜陶瓷基板DBC，顶部的散热层上到下为Al基金刚石基板和覆铜陶瓷基板DBC，顶部散热层和底部散热层的覆铜陶瓷基板DBC分别通过焊料层与高温原位日盲紫外探测器的上表面和下表面连接。
4.根据权利要求1所述的高温原位紫外探测系统，其特征在于，所述的电路互连的方式包括有引线键合、印刷电路和倒装焊接中的一种或多种；原位日盲紫外探测器中有四块DBC板；紫外探测器芯片为AlGaN基紫外探测芯片。
5.根据权利要求3或4所述的高温原位紫外探测系统，其特征在于，所述的散热模块为双面散热模块，电路互连的方式为全焊接无引线的高温原位紫外探测系统的结构为：底部散热层由下到上为Al基金刚石基板和覆铜陶瓷基板DBC，覆铜陶瓷基板DBC上为焊料层；
焊料层上有第一块DBC板上，在第一块DBC板上分别焊接FWD芯片和SiCMOSFET芯片，接着在FWD芯片上表面和SiCMOSFET芯片的部分上表面焊接第二块DBC板，SiCMOSFET芯片另一部分上表面焊接第三块DBC板，并在第三块DCB板上引出栅极至顶部散热层外，第二块与第三块DBC板之间不接触；
在第二块和第三块DBC板上通过焊料层与顶部散热层连接，顶部散热层由上到下为Al基金刚石基板和覆铜陶瓷基板DBC；
在顶部散热层的Al基金刚石基板引出的栅极位置安装第四块DCB板，栅极与第四块DCB板是接触的，在第四块DCB板上焊接紫外探测芯片，并在紫外探测芯片顶部引出栅极端子；
在第一块DCB板上引出集电极及相应的端子，在第二块DCB板上引出发射电极及相应的端子；集电极端子和发射电极端子都在散热层组成腔体外面；在上述结构组成的腔体内填充硅胶，即获得高温原位紫外探测系统。
6.根据权利要求2或4所述的高温原位紫外探测系统，其特征在于，所述的散热模块为单面散热模块，电路互连的方式为引线键合的高温原位紫外探测系统的结构为：
散热模块包括底部散热层和树脂腔体外壳，树脂腔体外壳以底部散热层为基底；底部散热层由下到上为Al基金刚石基板和覆铜陶瓷基板DBC，覆铜陶瓷基板DBC上层为焊料层；
焊料层上有3块DBC板，三块DBC板之间不接触，在第二块DBC板上焊接分别焊接FWD芯片和SiCMOSFET芯片，第三块DBC板上引出栅极至顶部树脂腔体外壳外，在第一块DCB板引出发射极端子至顶部树脂腔体外壳外，第二块DCB板引出集电极至顶部树脂腔体外壳外；在树脂腔体外壳引出栅极的位置安装第四块DBC板，第四块DBC板与栅极是接触的，在第四块DBC板上焊接紫外探测器芯片，并在紫外探测芯片顶部引出栅极端子；
第一块DCB板通过引线与FWD芯片连接，集电极分别通过引线与FWD芯片和SiCMOSFET芯片连接，SiCMOSFET芯片通过引线与第三块DCB板连接；
集电极端子和发射电极端子都在树脂腔体外壳外部；
向树脂腔体内填充硅胶，即得高温原位紫外探测系统。
7.根据权利要求3或4所述的高温原位紫外探测系统，其特征在于，所述的散热模块为双面散热模块，电路互连的方式为引线键合与焊接的组合的高温原位紫外探测系统的结构为：
底部散热层由下到上为Al基金刚石基板和覆铜陶瓷基板DBC，覆铜陶瓷基板DBC上为焊料层；
焊料层上2块DBC板，2块DBC之间不接触，在第一块DBC板上分别焊接FWD芯片和SiCMOSFET芯片，接着在FWD芯片上表面和SiCMOSFET芯片部分上表面焊接第三块DBC板；SiCMOSFET芯片另一部分上表面与第二块DBC板通过引线连接，在第二块DCB板上引出栅极至顶部散热层外，
在第一块DBC板上引出集电极及相应的端子；第三块DBC板上引出发射极及相应的端子；
在第三块DBC板上通过焊料层与顶部散热层连接，顶部散热层由上到下为Al基金刚石基板和覆铜陶瓷基板DBC；
在顶部散热层的Al基金刚石基板上引出栅极的位置，安装第四块DCB板，栅极与第四块DCB板是接触的，在第四块DCB板上焊接紫外探测芯片，并在紫外探测芯片顶部引出栅极端子；
集电极端子和发射电极端子都在散热层组成腔体外面；
在上述散热模块组成的腔体内填充硅胶，即获得高温原位紫外探测系统。
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KR20190095998A (ko) * 2018-02-08 2019-08-19 현대모비스 주식회사 전력용 반도체 모듈
CN109920785A (zh) * 2019-03-13 2019-06-21 黄山学院 双面散热ipm混合模块的封装结构及加工工艺
CN110047968A (zh) * 2019-04-17 2019-07-23 中南大学 一种AlGaN基3D倒装焊MSM阵列紫外探测器的制备方法

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