CN111710994A - Thin 5G and next generation mobile terminal oriented broadband millimeter wave antenna array - Google Patents

Thin 5G and next generation mobile terminal oriented broadband millimeter wave antenna array Download PDF

Info

Publication number
CN111710994A
CN111710994A CN202010551824.3A CN202010551824A CN111710994A CN 111710994 A CN111710994 A CN 111710994A CN 202010551824 A CN202010551824 A CN 202010551824A CN 111710994 A CN111710994 A CN 111710994A
Authority
CN
China
Prior art keywords
patch
antenna array
thin
notch
millimeter wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202010551824.3A
Other languages
Chinese (zh)
Other versions
CN111710994B (en
Inventor
吴永乐
余逸凡
王卫民
杨雨豪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing University of Posts and Telecommunications
Original Assignee
Beijing University of Posts and Telecommunications
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing University of Posts and Telecommunications filed Critical Beijing University of Posts and Telecommunications
Priority to CN202010551824.3A priority Critical patent/CN111710994B/en
Publication of CN111710994A publication Critical patent/CN111710994A/en
Application granted granted Critical
Publication of CN111710994B publication Critical patent/CN111710994B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H01Q21/065—Patch antenna array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors

Abstract

In the broadband millimeter wave antenna array for the thin 5G and next-generation mobile terminals, the middle layer patch uses four E-shaped patches, the top layer patch uses a rectangular patch, and each corner position of the rectangular radiation sheet body of each E-shaped patch and each corner position of each rectangular patch are respectively provided with a notch, so that the notches of each layer of the patches in the double-layer patches can be arranged, the materials used by the antenna can be reduced, and the bandwidth of the antenna array can be expanded through the notches; compared with the double-layer 5G antenna array based on the Butler matrix feed network with the broadband patch antenna element in the related art, which works in a wider frequency band and has relatively low return loss, the antenna array provided by the embodiment of the invention has the advantages that the port structure used as a short-circuit pin is added between the metal ground and the middle patch, so that the bandwidth of the antenna array is further expanded, and the return loss of each port of the antenna array is effectively improved.

Description

Thin 5G and next generation mobile terminal oriented broadband millimeter wave antenna array
Technical Field
The invention relates to the technical field of antennas, in particular to a thin 5G and next-generation mobile terminal-oriented broadband millimeter wave antenna array.
Background
In recent years, the development of fifth Generation mobile communication networks (5th Generation mobile networks or 5th Generation wireless systems, abbreviated as 5G) comes from the increasing demand for mobile data. With the development of the mobile internet, more and more mobile terminals are connected to the mobile network, and therefore, the development of 5G and next-generation mobile terminals is urgently needed. The antennas used in the current mobile terminal are numerous, for example, the antennas are multilayer E-shaped patch microstrip antenna arrays, and the antennas are not suitable for being applied to thin mobile terminals due to the use of more materials; another example is a compact loop antenna with a narrow bandwidth.
Disclosure of Invention
The embodiment of the invention aims to provide a thin 5G and next-generation mobile terminal-oriented broadband millimeter wave antenna array, which is used for solving the technical problems that in the prior art, the structure of a multilayer E-shaped patch microstrip antenna array uses more materials and the bandwidth of a compact annular antenna is very narrow. The specific technical scheme is as follows:
in a first aspect, an embodiment of the present invention provides a thin 5G and next generation mobile terminal-oriented wideband millimeter wave antenna array, including:
the top layer patch, the middle layer patch arranged between the metal ground and the top layer patch, and the metal ground as a bottom layer medium layer; wherein the metal floor comprises: opening a port structure used as a short circuit pin; the interlayer patch includes: tiling a plurality of E-shaped patches symmetrically arranged on the top layer, the middle layer patch comprising: tiling a plurality of rectangular patches which are symmetrically arranged on the middle layer, wherein the number of the rectangular patches is the same as that of the E-shaped patches;
each E-shaped patch comprises a rectangular radiation sheet body, two rectangular openings arranged on the rectangular radiation sheet body, and first notches positioned at each angular position of the radiation sheet body, wherein each first notch is symmetrically arranged; wherein the sheet of radiation includes: the coaxial line is connected with the feed hole through a connector and feeds power to the middle layer patch in a coaxial feed mode, and the middle layer patch is used for transmitting or receiving signals; the connector is matched with the feed hole;
each rectangular patch includes: the patch comprises a rectangular patch body and second cuts at each angular position of the rectangular patch body, wherein the first cuts and the second cuts are the same in number, size and cut structure.
Further, the cutting surface of the first notch is a curved surface which changes in a nonlinear monotone manner or the cutting surface of the first notch is a plane which changes in a linear manner.
Further, under the condition that the cutting surface of the first notch is a curved surface which is in nonlinear monotonic change, the curved surface is a smooth curved surface which can be guided everywhere, and the first notch is an arc-shaped notch.
Further, when the cutting surface of the first notch is a curved surface which changes in a nonlinear monotone manner, the curved surface is a bending curved surface where an unguided part exists, and the first notch is a flanging notch.
Further, along a cross section perpendicular to the thickness of the radiating sheet body, the cross-sectional area of the port structure for serving as the short-circuit pin is smaller than the cross-sectional area of the feed hole.
Further, the port structure for being as short circuit pin is a through hole, the feed hole and the through hole are regular holes respectively, wherein, the regular holes include: round holes, square holes and rhombic holes.
Further, the feed hole and the port structure for serving as a short circuit pin are irregular holes respectively.
Further, the diameter of the feed hole is 1mm, and the diameter of the port structure as the short circuit pin is 0.2 mm.
Furthermore, the E-shaped patches are four E-shaped patches which are arranged on the middle layer in a tiled matrix mode.
Further, the thickness of the bottom dielectric layer is within the range of [0.5mm, 0.51mm ];
the cut of the first cut and the cut of the second cut take values within the range of [0.49mm, 0.55mm ].
In a second aspect, an embodiment of the present invention provides an electronic device, including: the broadband millimeter wave antenna array for the thin 5G and next-generation mobile terminals according to the first aspect.
The embodiment of the invention has the following beneficial effects:
in the broadband millimeter wave antenna array facing the thin 5G and next-generation mobile terminal provided by the embodiment of the invention, the middle layer patch uses four E-shaped patches, the top layer patch uses a rectangular patch, and the first notch at each angular position of the rectangular radiating sheet body of each E-shaped patch and the second notch at each angular position of each rectangular patch can be arranged through the notches arranged at each layer of the double-layer patches, namely the middle layer patch and the top layer patch, so that the used materials of the antenna can be reduced, and the bandwidth of the antenna array can be expanded through the notches; compared with the double-layer 5G antenna array based on the Butler matrix feed network with the broadband patch antenna element in the related art, which works in a wider frequency band and has relatively low return loss, the antenna array provided by the embodiment of the invention has the advantages that the port structure used as a short-circuit pin is added between the metal ground and the middle patch, so that the bandwidth of the antenna array is further expanded, and the return loss of each port of the antenna array is effectively improved.
Of course, not all of the advantages described above need to be achieved at the same time in the practice of any one product or method of the invention.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic view of a flat-cut interlayer patch according to an embodiment of the present invention;
FIG. 2 is a schematic view of a top layer patch with a planar cut according to an embodiment of the present invention;
FIG. 3 is a first diagram illustrating S-parameter simulation results of reflection coefficients of ports according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a rectangular cut middle layer patch in accordance with an embodiment of the present invention;
FIG. 5 is a schematic view of a top layer patch with a rectangular cutout according to an embodiment of the present invention;
FIG. 6 is a second diagram illustrating S-parameter simulation results of reflection coefficients of ports according to an embodiment of the present invention;
FIG. 7 is a schematic view of a scalloped middle layer patch in accordance with an embodiment of the present invention;
FIG. 8 is a schematic view of the top patch with a sector cut according to an embodiment of the present invention;
FIG. 9 is a third diagram of S-parameter simulation results of reflection coefficients of ports according to an embodiment of the present invention;
FIG. 10 is a diagram illustrating the simulation result of the isolation S parameter between the ports according to the embodiment of the present invention;
FIG. 11 is a diagram illustrating simulation results of total gain at a center frequency of 33.7GHz according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Aiming at solving the problems that the structure of a multi-layer E-shaped patch microstrip antenna array in the prior art uses more materials and the bandwidth of a compact annular antenna is very narrow, the embodiment of the invention provides a thin 5G and next-generation mobile terminal-oriented broadband millimeter wave antenna array, in the embodiment of the invention, four E-shaped patches are used as middle-layer patches, rectangular patches are used as top-layer patches, a first notch at each angular position of a rectangular radiation sheet body of each E-shaped patch and a second notch at each angular position of each rectangular patch are used, so that the material used by the antenna can be reduced and the bandwidth of the antenna array can be expanded through the notches arranged on each layer of the double-layer patches, namely the middle-layer patches and the top-layer patches; compared with the double-layer 5G antenna array based on the Butler matrix feed network with the broadband patch antenna element in the related art, which works in a wider frequency band and has relatively low return loss, the antenna array provided by the embodiment of the invention has the advantages that the port structure used as a short-circuit pin is added between the metal ground and the middle patch, so that the bandwidth of the antenna array is further expanded, and the return loss of each port of the antenna array is effectively improved.
First, the wideband millimeter wave antenna array for thin 5G and next-generation mobile terminals according to the embodiments of the present invention will be described.
The dual-frequency filtering patch antenna based on probe coupling vertical feed provided by the embodiment of the invention is applied to electronic equipment, and specifically, the electronic equipment can be as follows: desktop computers, laptop computers, intelligent mobile terminals, servers, and the like. Without limitation, any electronic device that can implement the embodiments of the present invention is within the scope of the present invention. Moreover, the application range of the broadband millimeter wave antenna array facing the thin 5G and next-generation mobile terminals is wide, for example, but not limited to, in the scenes of mobile stations, frequency hopping radars, base stations, and the like.
The broadband millimeter wave antenna array facing the thin 5G and next-generation mobile terminal provided by the embodiment of the invention can comprise the following components:
the top layer patch, the middle layer patch arranged between the metal ground and the top layer patch, and the metal ground as a bottom layer medium layer; wherein the metal floor comprises: opening a port structure used as a short circuit pin; the interlayer patch includes: tiling a plurality of E-shaped patches symmetrically arranged on the top layer, the middle layer patch comprising: and tiling a plurality of rectangular patches which are symmetrically arranged on the middle layer, wherein the number of the rectangular patches is the same as that of the E-shaped patches. The plurality of E-shaped patches act as radiating patches.
Each E-shaped patch comprises a rectangular radiation sheet body, two rectangular openings arranged on the rectangular radiation sheet body, and first notches positioned at each angular position of the radiation sheet body, wherein each first notch is symmetrically arranged; wherein the sheet of radiation includes: the coaxial line is connected with the feed hole through a connector and feeds power to the middle layer patch in a coaxial feed mode, and the middle layer patch is used for transmitting or receiving signals; the connector is matched with the feed hole;
each rectangular patch includes: the patch comprises a rectangular patch body and second cuts at each angular position of the rectangular patch body, wherein the first cuts and the second cuts are the same in number, size and cut structure. So that the middle layer patch and the top layer patch can be arranged correspondingly. For convenience of description, the first cutout and the second cutout may be collectively referred to as a cutout.
In the embodiment of the invention, the middle layer patch uses four E-shaped patches, the top layer patch uses a rectangular patch, and the rectangular radiation sheet body of each E-shaped patch has a first notch at each angular position and a second notch at each angular position, so that the material used by the antenna can be reduced through the notches arranged on each layer of the double-layer patches, namely the middle layer patch and the top layer patch, and the bandwidth of the antenna array can be expanded through the notches; compared with the double-layer 5G antenna array based on the Butler matrix feed network with the broadband patch antenna element in the related art, which works in a wider frequency band and has relatively low return loss, the antenna array provided by the embodiment of the invention has the advantages that the port structure used as a short-circuit pin is added between the metal ground and the middle patch, so that the bandwidth of the antenna array is further expanded, and the return loss of each port of the antenna array is effectively improved.
It should be noted that, in order to widen the frequency band of the antenna array, a port structure may be added to the E-shaped patch and the metal ground, and the port structure is used to widen the frequency band of the antenna array. The port structure may be, but not limited to, a hole structure, a slot structure or a shorting pin, and further, the slot structure may be a V-shaped slot. Any frequency band capable of widening the antenna array is within the protection scope of the embodiments of the present invention, and no examples are given here.
The number of the shorting pins is more than four, and the number of the shorting pins is limited by the structure and size of the patch, which is not limited herein. By adding shorting pins and adjusting their positions, additional null modes can be generated and bandwidth expanded. The zero mode induction mechanism can be explained by the cavity model theory. In short, the application of a shorting pin in the patch will cause the electric field to disappear at this location, which will cause the electric field to perturb and create zero mode resonance. Therefore, in the embodiment of the invention, four short-circuit pins are added between the four E-shaped patches in the middle layer and the metal ground in the bottom layer (because the top layer of the metal ground and the lowest surface of the middle layer, namely the bottom layer, can be called as the metal ground in the bottom layer), so that the bandwidth of the antenna is further expanded in the mode, and the return loss is also improved. The number of the short-circuit pins for increasing the return loss of each port of the antenna array as long as the bandwidth of the antenna array can be expanded is within the protection range of the embodiment of the invention. And the opening structure used as a short circuit pin is arranged on the bottom metal ground and corresponds to the opening structure used as a short circuit pin on the middle layer patch. Of course, adding shorting pins not only increases bandwidth, but also increases return loss.
Since the number of the middle layer patches is the same as that of the top layer patches, and the number of the plurality of E-shaped patches may be determined according to gain, beam direction, and interference between patches. The smaller the number of general E-shaped patches and the number of rectangular patches, the less the gain of the antenna will be, and the larger the number of general E-shaped patches and the number of rectangular patches, the larger the interference between the patches will be. Based on this, optionally, the number of the plurality of E-shaped patches may be four, and the number of the plurality of rectangular patches may also be four, the plurality of rectangular patches are tiled and symmetrically arranged on the top-layer patch, and the plurality of E-shaped patches are also tiled and symmetrically arranged on the middle-layer patch. The antenna array formed by the four E-shaped patches and the four rectangular patches which are arranged in a tiled and symmetrical mode is high in gain and good in control of the beam direction. Based on the above description, it can be seen that the embodiments of the present invention, on the basis of achieving the advantages of a wide frequency band, high return loss, and the like, also ensure good directivity and high gain of the antenna array, and are beneficial to application to a mobile terminal.
Certainly, the four E-shaped patches are also tiled and symmetrically arranged on the middle patch to form a middle patch, and the four rectangular patches are tiled and symmetrically arranged on the top patch to form a top patch, so that the structure is simple, the design is easy, and the processing and the manufacturing are convenient; the E-shaped patch structure is planar, and each layer of patches can be processed by adopting a single-layer circuit board and finally synthesized into a double-layer circuit board structure. Thus, the thin mobile terminal can be used, a wide frequency band is ensured, and a thin double-layer structure is realized as far as possible.
By adopting the double-layer circuit board structure, the antenna array is constructed on the double-layer circuit board, namely, a double-layer metal patch structure is adopted on the metal ground, wherein the top layer patch is of a metal patch structure and can be called as a top layer metal patch, the middle layer patch is also of a metal patch structure and can be called as a middle layer metal patch, and the bottom layer metal ground is also of a metal ground. The top layer patch is arranged on the top layer medium substrate, and the bottom layer metal ground is arranged on the bottom layer medium substrate.
The thickness range of the bottom dielectric substrate is 0.5-0.51 mm, wherein the bandwidth is widest when the thickness is 0.508mm, and the effect is best; considering the application to a thin mobile terminal, the thickness range of the top dielectric substrate is 0.37-0.7 mm, wherein the bandwidth is widest when the thickness is 0.53mm, and the effect is the best. For example, Rogers RO4350 is selected for both the two dielectric substrates, the dielectric constant is 3.48, the dielectric loss is 0.0037, and the thicknesses of the bottom dielectric substrate and the top dielectric substrate are 0.508mm and 0.53mm respectively. The thin 5G and next-generation mobile terminal-oriented broadband millimeter wave antenna array disclosed by the embodiment of the invention has the advantages of simple structure, small size, small thickness, wide frequency band, obvious band-pass characteristic, high return loss, good directivity and high gain.
It should be further noted that the first notch of the E-shaped patch, the feed hole, the port structure for serving as a short-circuit pin, and the second notch of the rectangular patch are specifically described as follows:
first, the cross-sectional area of the feed hole and the port structure for the shorting pin is smaller than the cross-sectional area of the feed hole, for example, along a cross-section perpendicular to the thickness of the radiating plate body. Further, the port structure for serving as the shorting pin is a through hole, i.e., a metal through hole. The feed hole and the through hole are regular holes respectively, wherein the regular holes include: round holes, square holes and rhombic holes. Or the feed hole and the port structure used as the short circuit pin are respectively irregular holes, wherein the irregular holes are holes except regular holes. Further, the diameter of the feed hole may be 1mm, and the diameter of the port structure as the shorting pin may be 0.2 mm. As long as the connector can be matched with the feed hole, and the feed hole can widen the bandwidth of the antenna, and the port structure serving as the short-circuit pin can achieve the purpose of expanding the bandwidth of the antenna array and improving the return loss of each port of the antenna array, which all belong to the protection scope of the embodiment of the present invention, and no examples are given here.
Secondly, the cut of the first cut and the second cut takes values within the range of [0.49mm, 0.55mm ]. The radius range of the sector notch is 0.49-0.55 mm, wherein the bandwidth is widest when the radius is 0.5mm, and the effect is best.
The cut-off surface of the first cut of the E-shaped patch and the cut-off surface of the second cut of the rectangular patch, i.e., the cut-off surfaces of the cuts, may be any of surfaces that can achieve a wide band and have various shapes, for example, the cut-off surfaces of the cuts may be curved surfaces that change monotonically in a nonlinear manner or flat surfaces that change linearly, such as the E-shaped patch 10 and the rectangular cut 11 shown in fig. 1 and 2, and the cut-off surfaces of the cuts may be straight surfaces, and the cuts may be planar cuts. That is, the first cut of the E-shaped patch 10 is a plane cut, and the second cut of the rectangular patch 11 is also a plane cut. Therefore, the bandwidth of the antenna array can be expanded through the notches. Generally, a non-linear monotonically changing curved surface can better improve the bandwidth compared with a linearly changing planar notch, but the operating frequency band is relatively narrow. The simulation results of the S-parameters of the antenna implemented in fig. 1 and 2 are shown schematically. As shown in fig. 3, the planar notch improves the bandwidth of the antenna to some extent, but the transmission coefficient of a part of the operating frequency band is larger than-15 dB.
Further, the cutting surface of the notch may be a curved surface which changes nonlinearly and monotonically, the curved surface may be a bent curved surface where an untraceable part exists, and the notch is a hem notch. Illustratively, as shown in fig. 4 and 5, the cut-off surface of the notch may be a folded surface, and the notch may be a rectangular notch. That is, the first cut of the E-shaped patch 10 is a rectangular cut, and the second cut of the rectangular patch 11 is also a rectangular cut. The simulation results of the S-parameters of the antenna implemented in fig. 4 and 5 are shown schematically. As shown in fig. 6, the rectangular notch also enables the bandwidth of the antenna to be increased to some extent, and the range of the frequency band in which the transmission coefficient is greater than-15 dB in the operating frequency band is reduced.
Further, the cutting surface of the notch may be a curved surface which changes in a nonlinear monotone manner, the curved surface may be a smooth curved surface which can be guided everywhere, and the first notch is an arc-shaped notch. For example, the arc-shaped notch may be a sector-shaped notch, and as shown in fig. 7 and 8, the cut-off surface of the notch may be an arc-shaped surface, and the notch is a sector-shaped notch. That is, the first cut of the E-shaped patch 10 is a fan-shaped cut, and the second cut of the rectangular patch 11 is also a fan-shaped cut.
Comparing the three types of notches shown in fig. 1, 2, 4, 5, 7 and 8, the notches of other shapes than the sector notch can also improve the bandwidth to some extent, but the operating frequency band is narrower than that of the sector notch, and a part of the operating frequency band has a transmission coefficient greater than-15 dB, so that the sector notch effect is the best overall.
The embodiment of the invention shows that the center frequency is 33.7 GHz. Referring to fig. 7 to 8, the feeding hole in fig. 7 includes: the first feed hole 1, the second feed hole 2, the third feed hole 3 and the fourth feed hole 4 are respectively used as four ports of the antenna, and all the ports are fed by a 50-ohm coaxial line, based on the two layers of dielectric substrates in the embodiment of the invention, the Rogers RO4350 is selected, the dielectric constant is 3.48, the dielectric loss is 0.0037, the thicknesses of the bottom layer dielectric substrate and the top layer dielectric substrate are respectively 0.508mm and 0.53mm, the length L of the dielectric substrate is 15.5mm, and the width W is 10.8 mm. The broadband millimeter wave antenna array for the thin 5G and next-generation mobile terminals has the advantages that the center frequency is 32GHz, the working frequency is distributed in the range of 32.5GHz-34.9GHz, the broadband millimeter wave antenna array works in a millimeter wave frequency band, and the broadband millimeter wave antenna array can be widely applied to the thin 5G and next-generation mobile terminals.
Specific parameters of the thin 5G and next generation mobile terminal-oriented wideband millimeter wave antenna array in the embodiment of the invention are realized as follows:
firstly, the embodiment of the invention is realized by a double-layer printed circuit board, wherein a top-layer patch of the circuit board is a rectangular metal patch with a fan-shaped notch, a middle-layer patch is an E-shaped metal patch with a fan-shaped notch, and a bottom-layer metal ground is a metal ground; a first feed hole 1, a second feed hole 2, a third feed hole 3 and a fourth feed hole 4, and a first metal via 5, a second metal via 6, a third metal via 7, a fourth metal via 8 are added between the middle layer metal patch and the bottom layer metal ground. The coaxial line is connected with the first feed hole 1, the second feed hole 2, the third feed hole 3 and the fourth feed hole 4 through a 1mm connector to feed the antenna array.
The specific parameters are then presented as follows:
in the interlayer metal patches of the embodiment of the present invention shown in fig. 7, the length L1 of each metal patch is 4mm, the width W1 is 2.3mm, the length L2 of the rectangular opening is 2mm, the width of the rectangular opening and the interval between the two rectangular openings are respectively 0.3mm for W2 and 1mm for W3, and the radius R1 of each sector-shaped notch is 0.5 mm. The diameter of the feed hole is 1mm for D1, and the diameter of the metal through hole is 0.2mm for D2. The sizes of the four metal patches in the middle layer are completely consistent, and the sizes of the four feed holes and the four metal through holes are completely consistent. The center of the dielectric substrate is taken as an origin, and the position coordinates of the first feed hole 1, the second feed hole 2, the third feed hole 3 and the fourth feed hole 4 are (3.7mm, 2.1mm), (3.7mm, -2.1mm), (-3.7mm, 2.1mm), (-3.7mm, -2.1mm), respectively; the position coordinates of the first metal through hole 5, the second metal through hole 6, the third metal through hole 7 and the fourth metal through hole 8 are (5.33mm, 2.2mm), (5.33mm, -2.2mm), (-5.33mm, 2.2mm) and (-5.33mm, -2.2mm), respectively. Fig. 8 shows the top metal patch structure, each metal patch having a length L3 of 3.8mm, a width W4 of 2.1mm, and a radius R2 of 0.5mm for each scallop cut. The structural dimensions of the four metal patches of the top layer are also identical.
The embodiment of the invention takes a-15 dB bandwidth as the passband of the embodiment of the invention. The return loss is larger in the pass band and smaller at lower or higher frequencies, which fully indicates that the embodiment of the invention has good band-pass characteristics. The conventional E-shaped patch antenna has a wider operating band than other shaped patch antennas such as a C-shaped patch antenna or a dual C-shaped patch antenna. Therefore, the embodiment of the invention selects to modify the design based on the traditional E-shaped patch antenna. In order to be used in a thin mobile terminal and ensure a wide frequency band, the embodiment of the invention adopts a two-layer structure which is as thin as possible, and the invention can work in a relatively wide frequency band by using a two-layer metal patch structure and adding fan-shaped notches at four corners of each metal patch of each layer.
For the above fig. 7 and fig. 8, fig. 9 is a schematic diagram of simulation results of S parameters of the embodiment of the present invention, where the feed hole shown in fig. 7 includes: the first feeding hole 1, the second feeding hole 2, the third feeding hole 3 and the fourth feeding hole 4 are respectively used as four ports of the antenna, and the reflection coefficients of the four ports of the antenna, i.e., S, are shown in fig. 9xx(x ═ 1, 2, 3, 4), wherein the simulation results in fig. 9 show that when four ports are excited simultaneously, the frequency ranges of return loss of the four ports greater than 15dB are all 32.5GHz-34.9GHz, and there is very good consistency among the ports, it can be seen that the embodiment of the present invention has better broadband performance. Meanwhile, the return loss of the four ports is higher in the pass band, and the maximum return loss can reach 27 dB. The feed hole as shown in fig. 7 includes: the first feeding hole 1, the second feeding hole 2, the third feeding hole 3 and the fourth feeding hole 4 are respectively used as four ports of the antenna, and the isolation between the four ports of the antenna, i.e. S, is shown in fig. 101x(x is 2, 3, 4). The simulation results in fig. 10 show that the isolation performance between the ports is higher than 15dB in the passbands 32.5GHz-34.9 GHz. The embodiment of the invention has the characteristics of wide frequency band, high return loss and high isolation performance.
FIG. 11 is a diagram showing simulation results of total gain at a center frequency of 33.7GHz according to an embodiment of the present invention. Phi in FIG. 11 is azimuth, degree (deg). Simulation results show that the embodiment of the invention has good directivity, and the gain of the embodiment of the invention in the passband 32.5GHz-34.9GHz is relatively high and can reach about 5dBi at most.
The experimental data can well reflect various performances of the antenna array of the embodiment of the invention, and the antenna array has the advantages of wide frequency band, high return loss, high isolation performance, good directivity and high gain. Therefore, the invention has wide application scenes.
The size of the broadband millimeter wave antenna array facing the thin 5G and next-generation mobile terminals is 15.5mm multiplied by 10.8mm multiplied by 0.508mm (bottom layer) and 15.5mm multiplied by 10.8mm multiplied by 0.53mm (top layer), and the broadband millimeter wave antenna array is compact in overall size and thin in structure. The millimeter wave antenna array with the broadband and the high return loss can be applied to thin 5G and next-generation mobile terminals.
The following continues to describe the electronic device provided by the embodiment of the present invention.
The embodiment of the invention also provides electronic equipment which comprises the thin 5G and next-generation mobile terminal-oriented broadband millimeter wave antenna array.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the embodiment of the electronic device, since it is substantially similar to the embodiment of the antenna array, the description is simple, and the relevant points can be referred to the partial description of the embodiment of the antenna array.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.

Claims (10)

1. A wideband millimeter wave antenna array for thin 5G and next generation mobile terminals is characterized by comprising:
the top layer patch, the middle layer patch arranged between the metal ground and the top layer patch, and the metal ground as a bottom layer medium layer; wherein the metal floor comprises: opening a port structure used as a short circuit pin; the interlayer patch includes: tiling a plurality of E-shaped patches symmetrically arranged on the top layer, the middle layer patch comprising: tiling a plurality of rectangular patches which are symmetrically arranged on the middle layer, wherein the number of the rectangular patches is the same as that of the E-shaped patches;
each E-shaped patch comprises a rectangular radiation sheet body, two rectangular openings arranged on the rectangular radiation sheet body, and first notches positioned at each angular position of the radiation sheet body, wherein each first notch is symmetrically arranged; wherein the sheet of radiation includes: the coaxial line is connected with the feed hole through a connector and feeds power to the middle layer patch in a coaxial feed mode, and the middle layer patch is used for transmitting or receiving signals; the connector is matched with the feed hole;
each rectangular patch includes: the patch comprises a rectangular patch body and second cuts at each angular position of the rectangular patch body, wherein the first cuts and the second cuts are the same in number, size and cut structure.
2. The broadband millimeter wave antenna array facing thin 5G and next-generation mobile terminals of claim 1, wherein the cut-off surface of the first notch is a curved surface which changes nonlinearly and monotonically or the cut-off surface of the first notch is a plane which changes linearly.
3. The broadband millimeter wave antenna array for thin 5G and next-generation mobile terminals according to claim 2, wherein when the cut-off surface of the first notch is a curved surface with nonlinear monotone change, the curved surface is a smooth curved surface which can be guided everywhere, and the first notch is an arc notch.
4. The broadband millimeter wave antenna array for thin 5G and next-generation mobile terminals according to claim 2, wherein when the cut-off surface of the first notch is a curved surface with nonlinear monotone change, the curved surface is a bending curved surface with an opaque part, and the first notch is a flanging notch.
5. The broadband millimeter wave antenna array for thin 5G and next-generation mobile terminals according to any one of claims 1 to 4, wherein the cross-sectional area of the port structure for the short-circuit pin is smaller than the cross-sectional area of the feed hole along a cross section perpendicular to the thickness of the radiating sheet.
6. The broadband millimeter wave antenna array for thin 5G and next-generation mobile terminals according to claim 5, wherein the port structure for short-circuit pin is a through hole, and the feeding hole and the through hole are regular holes respectively, wherein the regular holes comprise: round holes, square holes and rhombic holes.
7. The broadband millimeter wave antenna array for thin 5G and next-generation mobile terminals according to claim 5, wherein the feeding holes and the openings for the shorting pins are irregular holes.
8. The broadband millimeter wave antenna array for thin 5G and next-generation mobile terminals according to claim 1, wherein the diameter of the feed hole is 1mm, and the diameter of the port structure as the shorting pin is 0.2 mm.
9. The broadband 5G and next-generation mobile terminal millimeter wave antenna array facing thin type according to any one of claims 1 to 4, wherein the E-shaped patches are four E-shaped patches arranged in a tiled matrix on the middle layer.
10. The broadband millimeter wave antenna array for thin 5G and next-generation mobile terminals according to any one of claims 1 to 4, wherein the thickness of the bottom dielectric layer is in the range of [0.5mm, 0.51mm ];
the cut of the first cut and the cut of the second cut take values within the range of [0.49mm, 0.55mm ].
CN202010551824.3A 2020-06-17 2020-06-17 Thin 5G and next generation mobile terminal oriented broadband millimeter wave antenna array Active CN111710994B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010551824.3A CN111710994B (en) 2020-06-17 2020-06-17 Thin 5G and next generation mobile terminal oriented broadband millimeter wave antenna array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010551824.3A CN111710994B (en) 2020-06-17 2020-06-17 Thin 5G and next generation mobile terminal oriented broadband millimeter wave antenna array

Publications (2)

Publication Number Publication Date
CN111710994A true CN111710994A (en) 2020-09-25
CN111710994B CN111710994B (en) 2021-09-28

Family

ID=72540812

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010551824.3A Active CN111710994B (en) 2020-06-17 2020-06-17 Thin 5G and next generation mobile terminal oriented broadband millimeter wave antenna array

Country Status (1)

Country Link
CN (1) CN111710994B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104009292A (en) * 2014-06-05 2014-08-27 太原理工大学 Miniaturized broadband microstrip antenna
CN104218311A (en) * 2014-08-22 2014-12-17 华为技术有限公司 Microstrip antenna and communication equipment
CN105244614A (en) * 2015-10-29 2016-01-13 中国船舶重工集团公司第七二四研究所 Broadband capacitive feed miniature microstrip paster antenna
CN105633568A (en) * 2016-03-08 2016-06-01 电子科技大学 LTCC laminated wideband microstrip array antenna in special feed form
CN209357927U (en) * 2019-02-27 2019-09-06 山东雷诚电子科技有限公司 A kind of integrated Active Front End module of S-band
CN110416746A (en) * 2019-07-19 2019-11-05 深圳大学 A kind of wideband millimeter wave antenna unit and aerial array

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104009292A (en) * 2014-06-05 2014-08-27 太原理工大学 Miniaturized broadband microstrip antenna
CN104218311A (en) * 2014-08-22 2014-12-17 华为技术有限公司 Microstrip antenna and communication equipment
CN105244614A (en) * 2015-10-29 2016-01-13 中国船舶重工集团公司第七二四研究所 Broadband capacitive feed miniature microstrip paster antenna
CN105633568A (en) * 2016-03-08 2016-06-01 电子科技大学 LTCC laminated wideband microstrip array antenna in special feed form
CN209357927U (en) * 2019-02-27 2019-09-06 山东雷诚电子科技有限公司 A kind of integrated Active Front End module of S-band
CN110416746A (en) * 2019-07-19 2019-11-05 深圳大学 A kind of wideband millimeter wave antenna unit and aerial array

Also Published As

Publication number Publication date
CN111710994B (en) 2021-09-28

Similar Documents

Publication Publication Date Title
US6292153B1 (en) Antenna comprising two wideband notch regions on one coplanar substrate
US6246377B1 (en) Antenna comprising two separate wideband notch regions on one coplanar substrate
CN111052504A (en) Millimeter wave antenna array element, array antenna and communication product
WO2011095969A1 (en) Compact tapered slot antenna
CN109687125B (en) Ultra-low profile dual-frequency wide-beam microstrip antenna based on multi-mode fusion
KR19990007464A (en) Broadband printing for microwave and millimeter wave applications
CN111541040A (en) Double-linear polarization and double-circular polarization four-port reconfigurable dielectric resonant antenna
JP4364439B2 (en) antenna
CN110768014B (en) Integrated substrate gap waveguide via cluster feed antenna
CN110783704B (en) Double-via probe feed integrated substrate gap waveguide circularly polarized antenna
CN108736153B (en) Three-frequency low-profile patch antenna
CN113540810A (en) Microstrip slot coupling super-surface antenna with open rectangular ring loaded
JP2003298339A (en) Stacked dielectric antenna
CN112886234B (en) Microwave millimeter wave coplanar common-caliber antenna based on embedded structure
CN111682312B (en) Asymmetrically cut patch antenna along E plane
Jagtap et al. Gain and bandwidth enhancement of circularly polarized MSA using PRS and AMC layers
GB2236625A (en) Monopole antenna.
CN115458892B (en) Four-way in-phase unequal power divider based on circular SIW resonant cavity
CN109786959B (en) Millimeter wave antenna
KR101602575B1 (en) Wide-band proximity coupled patch antenna using impedance matching network
CN111710994B (en) Thin 5G and next generation mobile terminal oriented broadband millimeter wave antenna array
Hamid et al. Wideband reconfigurable log periodic patch array
CN210668686U (en) Novel single via hole probe feed ISGW circular polarized antenna
CN112531355A (en) +/-45-degree dual-polarized millimeter wave array antenna
Rahayu et al. A small novel ultra wideband antenna with slotted ground plane

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant