CN111697092A - 具有非穿透沟槽的窄边缘电流型硅pin辐射探测器及其制备方法 - Google Patents
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Abstract
本发明公开了一种具有非穿透沟槽的窄边缘电流型硅PIN辐射探测器及其制备方法。在I区半导体硅片的正面和背面通过离子注入工艺形成P+区和N+区,在I区半导体硅片上刻蚀形成宽度足够大的非穿透沟槽,并在沟槽表面扩散掺杂形成N+区。本发明在常规PIN结构探测器的基础上设计了非穿透沟槽结构,不仅避免了全穿透沟槽结构对支撑硅片的依赖性,简化了工艺;而且达到探测器窄边缘的目的,减小探测器的死区和所需的划片面积,同时降低了缺陷的产生,提高了探测器的收集效率。另外,非穿透沟槽表面的N+区形成低阻层,使得探测器可在高压下工作。本发明的电流型硅PIN辐射探测器可用于对收集效率和高压工作环境有需求的核辐射探测、航空航天等领域。
Description
技术领域
本发明涉及核辐射探测领域,具体涉及一种具有非穿透沟槽的窄边缘电流型硅PIN辐射探测器及其制备方法。
背景技术
随着半导体技术领域的不断发展,半导体辐射探测器的性能得到了大幅度提升。其中,电流型硅PIN辐射探测器由于具有结构简单、体积小、能量分辨率高、线性范围宽、脉冲时间响应快等优点,在核辐射探测、辐射防护、航空航天、环境监测等领域得到了很广泛的应用。
电流型硅PIN辐射探测器是通过对探测器外加反向偏压使其处于全耗尽状态,当辐射粒子进入探测器并被吸收以后产生相应的电子空穴对,这些电子空穴对在电场的作用下向探测器两面漂移,产生的瞬间脉冲电流信号用来估计所俘获的粒子的能量与数量。当下,随着核辐射探测器应用场景的不断更新,科学研究对电流型辐射探测器的收集效率和耐高压性能提出了更高的要求。
在电流型硅PIN辐射探测器制作过程中,通常使用金刚刀划片将探测器从晶圆片上切割分离下来,切割的过程会在探测器边缘引入杂质和缺陷,产生复合中心,这使得探测器存在较大的漏电流,限制其在高压下工作。此外,PN结界面与探测器实际边缘之间通常存在至少几百微米的距离,这就造成探测器存在较大的死区,极大影响了辐射探测器的收集效率。在三维探测器领域报道了在探测器边缘刻蚀一个宽度比较窄的穿透性沟槽,并在边缘进行高浓度的离子注入掺杂形成欧姆接触以减少死区,但穿透性的沟槽工艺需要在支撑硅片上进行操作,工艺复杂性和难度均较大。因此,为了减小划片面积和工艺操作难度,同时减小探测器死区和满足耐高压需求,我们亟需研究一种新的电流型硅PIN辐射探测器的制备方法来满足核辐射探测的应用要求。
发明内容
本发明的目的在于提供一种具有非穿透沟槽的窄边缘电流型硅PIN辐射探测器及其制备方法。相比于已报道的其他结构,该电流型硅PIN辐射探测器结构简化了工艺,减小了划片面积和死区,提高了收集效率,可在高压下工作。
本发明的技术思路如下:为减小电流型硅PIN辐射探测器在边缘区域存在的死区,可通过减小PN结界面到探测器边缘的距离来实现,但考虑到使用金刚刀划片对整个探测器侧面进行切割时会导致损伤和缺陷的产生,故本发明采用沟槽工艺在电流型硅PIN辐射探测器的边缘挖一个宽度较大的沟槽,该沟槽设计为非穿透的沟槽结构,即有限深度的沟槽,沟槽并未穿透到辐射探测器衬底最底部,设计目的在于避免了全穿透沟槽结构制作中支撑硅片的使用,简化了沟槽工艺。与此同时,通过非穿透沟槽结构设计,减小了PN结到辐射探测器边缘的距离,即减小了辐射探测器的死区,实现窄边缘效果以提高电流型硅PIN辐射探测器的收集效率。另外,为了使窄边缘的电流型硅PIN辐射探测器能在高压下工作,我们在沟槽区域进行高浓度的扩散掺杂,使得沟槽区域的表面形成低阻层,提高其击穿电压。在对本发明所设计的具有非穿透沟槽的窄边缘电流型硅PIN辐射探测器进行划片时,由于非穿透沟槽的结构设计,最终需要划片的面积大幅减小,这样一来划片造成的危害也被大大降低。
依据上述思路,为了减小划片面积和工艺操作难度,同时减小探测器死区和满足耐高压需求,本发明提供了一种具有非穿透沟槽的窄边缘电流型硅PIN辐射探测器,其结构包括I 区半导体硅片,所述I区半导体硅片的正面有掺杂形成的P+区,所述P+区之外的硅片上表面覆盖有二氧化硅钝化层;所述P+区的上面覆盖有薄金属层,该薄金属层具有场板结构;所述 I区半导体硅片的背面全部为掺杂形成的N+区;所述N+区下表面覆盖有厚金属层;在所述I 区半导体硅片上,器件的边缘处设有非穿透沟槽,并在沟槽表面全部掺杂形成N+区。
优选的,上述具有非穿透沟槽结构的窄边缘电流型硅PIN辐射探测器是针对厚PIN辐射探测器的应用而设计,故所述I区半导体硅片优选为N型硅,电阻率>1000Ω·cm,厚度250~ 300μm。
所述I区半导体硅片的正面有掺杂形成的P+区,所述P+区之外的硅片上表面覆盖有二氧化硅钝化层,所述P+区上面覆盖有薄金属层,该薄金属层具有场板结构,薄金属层与I区半导体硅片的接触面积优选小于P+区。所述薄金属层的厚度在到范围内,其材料优选为铝。
所述I区半导体硅片的背面掺杂形成N+区,优选整个I型半导体硅片的背面都掺杂形成 N+区。在N+区表面覆盖有厚金属层。所述厚金属层的厚度在0.5μm到1μm范围内,其材料优选为铝。
所述非穿透沟槽的深度小于I区半导体硅片的厚度,沟槽宽度要足够宽以保证器件达到窄边缘的效果,并且易于划片操作。在所述非穿透沟槽的表面全部扩散掺杂形成N+区。
上述具有非穿透沟槽的窄边缘电流型硅PIN辐射探测器可以通过下述方法制备:
1)在I区半导体硅片的正面和背面通过热氧化生长一层二氧化硅作为器件表面钝化层,然后在I区半导体硅片的正面通过光刻和刻蚀定义后续离子注入P+区图形;
2)在I区半导体硅片的正面通过离子注入形成P+区,在I区半导体硅片的背面通过进行离子注入形成N+区,然后进行退火;
3)在I区半导体硅片上器件的边缘处刻蚀一个不穿透I区半导体硅片的非穿透沟槽(有限深度的沟槽);
4)在非穿透沟槽的表面区域掺杂形成沟槽N+区,以形成低阻层;
5)在硅片正面光刻定义金属与P+区的接触窗口,双面腐蚀除去硅片正面窗口内的二氧化硅和硅片背面的二氧化硅;在I区半导体硅片的正面溅射一层薄金属层,然后通过光刻和刻蚀工艺形成覆盖P+区并具有场板结构的薄金属层;在I区半导体硅片的背面溅射厚金属层;
6)在非穿透沟槽内进行划片,获得具有非穿透沟槽的窄边缘电流型硅PIN辐射探测器。
在上述步骤1)中的I区半导体硅片优选N型硅,电阻率>1000Ω·cm,厚度250~300μm;在对I区半导体硅片作预处理之后,在硅片上下表面热氧化形成一层厚度二氧化硅钝化层,在正面光刻探测窗口图形,并刻蚀减薄探测窗口内的二氧化硅和硅片背面的二氧化硅。
步骤2)优选在I区半导体硅片正面进行硼离子注入形成P+区,离子注入剂量优选为 1e14/cm2~1e15/cm2,注入能量优选为30KeV~50KeV;优选在硅基片背面进行磷离子注入形成N+区,注入区域优选为整个硅片背表面,离子注入剂量优选为1e14/cm2~1e15/cm2,注入能量优选为80KeV~120KeV;离子注入后去除光刻胶,然后快速退火,退火温度优选为850℃~1050℃。
步骤3)中优选通过干法刻蚀工艺(DRIE)刻蚀硅片形成非穿透沟槽,非穿透沟槽的深度小于I区半导体硅片的厚度,优选为200~250μm,宽度优选为200~400μm。
步骤4)优选在非穿透沟槽的表面区域通过扩散工艺进行掺杂,更优选进行高浓度的磷离子掺杂形成沟槽N+区,扩散工艺在高能量氛围进行,炉管温度大于800℃。
步骤5)在I区半导体硅片正面的二氧化硅层上光刻定义金属/硅接触窗口图形;优选采用BHF缓冲溶液腐蚀硅片正面金属/硅接触窗口内的二氧化硅和硅片背面的二氧化硅;常规清洗后在硅片正面溅射一薄金属层(优选为铝),厚度优选为光刻、腐蚀正面金属,得到正面金属层图形;在硅片背面溅射一厚金属层(优选为铝),厚度优选为0.5~1μm。
步骤6)一般是利用金刚刀在非穿透沟槽中央进行划片,获得窄边缘电流型硅PIN辐射探测器。
和现有技术相比,本发明具有如下优点:
1)本发明在探测器边缘设计了非穿透沟槽结构,沟槽为有限深度的沟槽,未穿透到硅片的底部,这样的设计简化了穿透性沟槽结构需要在支撑硅片上进行制作的工艺,降低了工艺难度和成本,同时使得PN结界面到探测器边缘的宽度大大减小,达到电流型硅PIN辐射探测器窄边缘的设计目标,减小了探测器死区,提高了探测器对辐射粒子的收集效率。
2)本发明通过扩散工艺在沟槽的表面扩散形成N+区以达到欧姆接触的效果,减小了沟槽附近的漏电流,从而保证探测器的耐击穿性能不被损坏。通过非穿透的沟槽结构兼得电流型硅PIN辐射探测器的窄边缘和耐高压是本发明的一大特色所在。
3)本发明在非穿透沟槽的中央进行划片,极大减小了金刚刀划片的面积,从而避免了大面积划片对探测器边缘造成的污染与损伤,减小了探测器的漏电流。
附图说明
图1到图7为本发明的一种具有非穿透沟槽的窄边缘电流型硅PIN辐射探测器的具体制备流程中各步骤的结构示意图,其中:
1-I区半导体硅片,2-二氧化硅层,3-P+区(离子注入工艺),4-N+区(离子注入工艺),5-非穿透沟槽,6-沟槽N+区(扩散工艺),7-正面薄铝层电极,8-背面厚铝层电极,9-场板结构。
具体实施方式
以下结合附图所示的最佳实例对本发明的一种具有非穿透沟槽的窄边缘电流型硅PIN辐射探测器及其制备方法作进一步详述。
本实施例所制备的具有非穿透沟槽的窄边缘电流型硅PIN辐射探测器主要结构如图7所示,包括:I区半导体层硅片1和非穿透沟槽5。其中,I区半导体硅片1为高阻N型硅,厚度为300μm,电阻率为4000Ω·cm,非穿透沟槽5的深度为250μm。
I区半导体硅片1的正面通过硼掺杂(离子注入)形成P+区3,其上覆盖有薄铝层电极7,薄铝层电极7具有场板结构9,以通过分散主结边缘的电场来提高击穿电压;正面探测窗口以外区域用二氧化硅层2作钝化层。I区半导体硅片1的背面通过磷掺杂(离子注入)形成 N+区4;N+区4上覆盖有厚铝层电极8。非穿透沟槽5的深度小于I区半导体硅片1的厚度,避免了全穿透沟槽对支撑硅片的依赖性,简化了沟槽工艺,减小了工艺难度;非穿透沟槽5 的表面有通过扩散工艺形成的沟槽N+区6,以形成欧姆接触。
上述具有非穿透沟槽的窄边缘电流型硅PIN辐射探测器的具体制备方法包括下述步骤:
a.选用的I区半导体硅片1的厚度为300μm,N型硅,电阻率为4000Ω·cm,双面抛光;备片后,对I区半导体硅片1进行常规清洗预处理;在I区半导体硅片1的上下表面热氧化生长厚度为的二氧化硅层2;光刻正面探测窗口图形,用等离子刻蚀法减薄探测窗口图形内的二氧化硅和硅片背面的二氧化硅,定义硅片正反面后续离子注入区域。该步骤之后的结构如图1所示。
b.利用离子注入工艺从I区半导体硅片1的正面以50KeV注入能量、1e14/cm2的注射剂量注入硼离子,形成P+区3;从背面以100KeV注入能量、1e15/cm2的注射剂量注入磷离子,形成背面N+区4;之后进行N2环境下退火1min,退火温度为900℃。该步骤之后的结构如图2所示。
c.通过光刻,腐蚀二氧化硅开窗口,利用干法腐蚀工艺DRIE在I区半导体硅片1上挖一个非穿透沟槽5,深度小于I区半导体硅片,深度为200μm,宽度为300μm。该步骤之后的结构如图3所示。
d.在非穿透沟槽5表面区域通过扩散工艺形成高掺杂的沟槽N+区6。该步骤之后的结构如图4所示。
e.在正面二氧化硅层2上光刻铝/硅接触窗口图形,将硅片浸入BHF缓冲溶液中约2min,腐蚀铝/硅接触窗口内以及I区半导体硅片1背面的二氧化硅层2。该步骤之后的结构如图5 所示。
f.在正面溅射一厚度为的薄铝层,形成正面薄铝层;在背面溅射厚度为0.5μm 的厚铝层,形成背面厚铝层;光刻正面薄铝层电极7图形,用磷酸腐蚀出具有场板结构9的正面铝层图形;之后进行430℃,30min的铝合金,以形成良好的欧姆接触。该步骤之后的结构如图6所示。
g.使用金刚刀划片机在沟槽中间进行划片。该步骤之后的结构如图7所示。
Claims (10)
1.一种电流型硅PIN辐射探测器,包括I区半导体硅片,所述I区半导体硅片的正面有掺杂形成的P+区,所述P+区之外的硅片上表面覆盖有二氧化硅钝化层;所述P+区的上面覆盖有薄金属层,该薄金属层具有场板结构;所述I区半导体硅片的背面全部为掺杂形成的N+区;所述N+区下表面覆盖有厚金属层;在所述I区半导体硅片上,器件的边缘处设有非穿透沟槽,并在沟槽表面全部掺杂形成N+区。
2.如权利要求1所述的电流型硅PIN辐射探测器,其特征在于,所述I区半导体硅片为N型硅,电阻率>1000Ω·cm,厚度在250~300μm。
3.如权利要求1所述的电流型硅PIN辐射探测器,其特征在于,所述薄金属层与I区半导体硅片的接触面积小于P+区。
5.如权利要求1所述的电流型硅PIN辐射探测器,其特征在于,所述非穿透沟槽的深度小于I区半导体硅片的厚度,宽度要易于划片操作且划片后保证器件达到窄边缘的效果。
6.权利要求1~5任一所述电流型硅PIN辐射探测器的制备方法,包括以下步骤:
1)在I区半导体硅片的正面和背面通过热氧化生长一层二氧化硅作为器件表面钝化层,然后在硅片正面通过光刻和刻蚀定义后续离子注入P+区图形;
2)在硅片正面通过离子注入形成P+区,在硅片背面通过进行离子注入形成N+区,然后退火;
3)在I区半导体硅片上器件的边缘处刻蚀一个不穿透I区半导体硅片的非穿透沟槽;
4)在非穿透沟槽的表面区域掺杂形成沟槽N+区;
5)在硅片正面光刻定义金属与P+区的接触窗口,双面腐蚀除去硅片正面窗口内的二氧化硅和硅片背面的二氧化硅;在硅片正面溅射一层薄金属层,然后通过光刻和刻蚀工艺形成覆盖P+区并具有场板结构的薄金属层;在硅片背面溅射厚金属层;
6)在非穿透沟槽内进行划片,获得电流型硅PIN辐射探测器。
8.如权利要求6所述的制备方法,其特征在于,在I区半导体硅片正面进行硼离子注入形成P+区,在硅基片背面进行磷离子注入形成N+区;离子注入后去除光刻胶,然后快速退火。
9.如权利要求6所述的制备方法,其特征在于,步骤3)通过干法刻蚀硅片形成非穿透沟槽,非穿透沟槽的深度为200~250μm,宽度为200~400μm。
10.如权利要求6所述的制备方法,其特征在于,步骤5)在I区半导体硅片正面的二氧化硅层上光刻定义所述接触窗口,采用BHF缓冲溶液腐蚀硅片正面所述接触窗口内的二氧化硅和硅片背面的二氧化硅;步骤6)利用金刚刀在非穿透沟槽中央进行划片。
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