CN111696839A - Light-emitting backlight source of arrow-penetrating, bending-stabilizing and gating structure with same-circle drum pair-broken arc-surface cathode - Google Patents

Light-emitting backlight source of arrow-penetrating, bending-stabilizing and gating structure with same-circle drum pair-broken arc-surface cathode Download PDF

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CN111696839A
CN111696839A CN202010572983.1A CN202010572983A CN111696839A CN 111696839 A CN111696839 A CN 111696839A CN 202010572983 A CN202010572983 A CN 202010572983A CN 111696839 A CN111696839 A CN 111696839A
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layer
cathode
electrode
gate electrode
drum
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李玉魁
高宝宁
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Jinling Institute of Technology
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00Gas-filled discharge tubes with solid cathode
    • H01J17/38Cold-cathode tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00Gas-filled discharge tubes with solid cathode
    • H01J17/02Details
    • H01J17/04Electrodes; Screens
    • H01J17/06Cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00Gas-filled discharge tubes with solid cathode
    • H01J17/02Details
    • H01J17/04Electrodes; Screens
    • H01J17/06Cathodes
    • H01J17/066Cold cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00Gas-filled discharge tubes with solid cathode
    • H01J17/02Details
    • H01J17/04Electrodes; Screens
    • H01J17/12Control electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00Gas-filled discharge tubes with solid cathode
    • H01J17/38Cold-cathode tubes
    • H01J17/48Cold-cathode tubes with more than one cathode or anode, e.g. sequence-discharge tube, counting tube, dekatron
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/14Manufacture of electrodes or electrode systems of non-emitting electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel

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  • Cold Cathode And The Manufacture (AREA)

Abstract

The invention discloses a luminous backlight source of a same-circle drum opposite-broken arc-surface cathode arrow-penetrating stable-bending gate control structure, which comprises a vacuum enclosure and an auxiliary element of a getter positioned in the vacuum enclosure, wherein the vacuum enclosure consists of a front hard transparent glass plate, a rear hard transparent glass plate and a glass narrow frame strip; the front hard transparent glass plate is provided with an anode flat block film layer, an anode silver wire long epitaxial layer and a thin luminous layer, the anode flat block film layer is connected with the anode silver wire long epitaxial layer, and the thin luminous layer is manufactured on the anode flat block film layer; and an arrow-penetrating and curve-stabilizing gate control structure with the same round drum and the broken cambered surface is arranged on the rear hard transparent glass plate. The LED backlight source has the advantage of good uniformity of luminous intensity of the luminous backlight source.

Description

Light-emitting backlight source of arrow-penetrating, bending-stabilizing and gating structure with same-circle drum pair-broken arc-surface cathode
Technical Field
The invention belongs to the fields of semiconductor science and technology, nano science and technology, vacuum science and technology, microelectronic science and technology, plane display technology, photoelectron science and technology, and the field of vacuum science and technology, and relates to the manufacture of plane light-emitting backlight sources, in particular to the manufacture of a plane light-emitting backlight source of a carbon nano tube cathode, in particular to a light-emitting backlight source of a same-circle drum opposite-broken arc-surface cathode arrow-penetrating stable-bending gate control structure and a manufacture process thereof.
Background
The carbon nanotube is a hollow tubular substance with the pipe diameter in the nanometer order. Due to its small tip radius of curvature, it is capable of a large amount of electron emission under a suitable vacuum environment. The excellent electrical characteristics of carbon nanotubes can be fully utilized to form electron sources for devices. In a light emitting backlight, electrons emitted by the carbon nanotubes may be used to form a cathode current of the light emitting backlight. However, in a light-emitting backlight of a three-pole structure, there are some technical difficulties to be overcome. First, the carbon nanotubes emit a low number of electrons, making it difficult to form a large cathodic current. In the carbon nanotube layer, there are many carbon nanotubes, but not all of the carbon nanotubes participate in electron emission. Only a small fraction of the carbon nanotubes are capable of electron emission and the number of electrons emitted is not large, and the cathode current of a luminescent backlight is mainly derived from these emitted cathode electrons. Since the number thereof is not large, the cathode current of the light emitting backlight is also small. While most of the carbon nanotubes do not emit electrons, forming a virtually ineffective cathode. In carbon nanotube cathodes, the presence of ineffective cathodes should be minimized. Second, the control of the gate voltage to the carbon nanotube cathode is weak. When a proper gate voltage is applied, the carbon nanotube does not emit electrons immediately, and generally delays for a period of time; when the gate voltage is removed, the carbon nanotubes still emit electrons. These are all specific manifestations of gate voltage runaway. There is also a need for improvements in gates. These technical difficulties also require careful and comprehensive consideration and search.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to overcome the defects and shortcomings in the light-emitting backlight source and provide the light-emitting backlight source with the same-circle drum pair arc-broken surface cathode arrow-penetrating stable curved gate control structure, which has good light-emitting intensity uniformity and stable manufacturing process, and the light-emitting backlight source and the manufacturing process thereof.
The technical scheme is as follows: the invention relates to a light-emitting backlight source of a co-circle drum pair arc-surface cathode arrow-penetrating and curve-stabilizing gating structure, which comprises a vacuum enclosure and an auxiliary element of a getter positioned in the vacuum enclosure, wherein the vacuum enclosure consists of a front hard transparent glass plate, a rear hard transparent glass plate and a glass narrow frame strip; the front hard transparent glass plate is provided with an anode flat block film layer, an anode silver wire long epitaxial layer and a thin luminous layer, the anode flat block film layer is connected with the anode silver wire long epitaxial layer, and the thin luminous layer is manufactured on the anode flat block film layer; and an arrow-penetrating and curve-stabilizing gate control structure with the same round drum and the broken cambered surface is arranged on the rear hard transparent glass plate.
Specifically, the substrate of the same-circle drum pair arc-surface cathode arrow-penetrating stable-bending gate control structure is a rear hard transparent glass plate; forming a gray-black shading layer on the printed insulating paste layer on the rear hard transparent glass plate; forming a cathode silver wire long epitaxial layer on the printed silver paste layer on the gray black shading layer; the printed insulating slurry layer on the long epitaxial layer of the cathode silver wire forms a cathode co-drum lower layer; the lower surface of the cathode co-drum lower layer is a circular plane and is positioned on the cathode silver wire long epitaxial layer, the upper surface of the cathode co-drum lower layer is a circular plane, the upper surface and the lower surface of the cathode co-drum lower layer are parallel to each other, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode co-drum lower layer are superposed with each other, the diameter of the upper surface of the cathode co-drum lower layer is equal to that of the lower surface, and the outer side surface of the cathode co-drum lower layer is a cylindrical surface; square holes are formed in the lower layer of the same drum of the cathode, and a silver paste layer printed in the square holes forms a layer of cathode mutual extension lines; the cathode mutual extension wire layer and the cathode silver wire long epitaxial layer are communicated with each other; the printed silver paste layer on the upper surface of the lower layer of the cathode drum forms a cathode mutual extension line two layer; the cathode mutual extension line two layer and the cathode mutual extension line one layer are communicated with each other; the printed insulating slurry layer on the upper surface of the lower layer of the cathode drum forms a cathode drum middle layer; the lower surface of the cathode drum-sharing middle layer is a circular plane and is positioned on the upper surface of the cathode drum-sharing lower layer, the central vertical line of the lower surface of the cathode drum-sharing middle layer and the central vertical line of the upper surface of the cathode drum-sharing lower layer are overlapped with each other, the diameter of the lower surface of the cathode drum-sharing middle layer is equal to the diameter of the upper surface of the cathode drum-sharing lower layer, the upper surface of the cathode drum-sharing middle layer is a circular plane, the upper surface and the lower surface of the cathode drum-sharing middle layer are parallel to each other, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode drum-sharing middle layer are overlapped with each other, the diameter of the upper surface of the cathode drum-sharing middle layer is smaller than the diameter of the lower surface, the outer side surface of the; square holes are formed in the cathode drum middle layer, and the silver paste layer printed in the square holes forms three layers of cathode mutual extension lines; the three layers of the cathode mutual extension lines and the one layer of the cathode mutual extension lines are communicated with each other; the printed silver paste layer on the upper surface of the cathode drum median layer forms four layers of cathode mutual extension lines; the four layers of the cathode mutual extension lines and the three layers of the cathode mutual extension lines are communicated with each other; the printed silver paste layer on the outer side surface of the cathode drum and the middle layer forms a cathode broken arc bottom electrode; the cathode arc breaking bottom electrode is positioned on the outer side surface of the cathode drum median layer, the lower edge of the cathode arc breaking bottom electrode faces the lower edge direction of the outer side surface of the cathode drum median layer and is flush with the lower edge of the outer side surface of the cathode drum median layer, the upper edge of the cathode arc breaking bottom electrode faces the upper edge direction of the outer side surface of the cathode drum median layer and is not flush with the upper edge of the outer side surface of the cathode drum median layer, and the height of the upper edge of the cathode arc breaking bottom electrode is not more than half the height of the outer side surface of the cathode drum median layer; the cathode broken arc bottom electrode and the cathode mutual extension line two layers are communicated with each other; the printed silver paste layer on the outer side surface of the cathode drum meso-position layer forms a cathode broken arc top electrode; the cathode broken arc top electrode is positioned on the outer side surface of the cathode drum median layer, the upper edge of the cathode broken arc top electrode faces the upper edge direction of the outer side surface of the cathode drum median layer and is flush with the upper edge of the outer side surface of the cathode drum median layer, the lower edge of the cathode broken arc top electrode faces the lower edge direction of the outer side surface of the cathode drum median layer and is not flush with the lower edge of the outer side surface of the cathode drum median layer, and the lower edge of the cathode broken arc top electrode is higher than the half height of the outer side surface of the cathode drum median layer; the four layers of the cathode broken arc top electrode and the cathode mutual extension wire are communicated with each other; forming a cathode drum covering layer by the printed insulating slurry layer on the upper surface of the cathode drum median layer; the lower surface of the cathode drum covering layer is a circular plane and is positioned on the upper surface of the cathode drum median layer, and the central vertical line of the lower surface of the cathode drum covering layer and the central vertical line of the upper surface of the cathode drum median layer are superposed with each other; forming a gate electrode penetrating arrow bottom layer by the printed insulating slurry layer on the gray black shielding layer; the lower surface of the first layer of the gate electrode penetrating arrow bottom is a plane and is positioned on the gray and black shielding layer, a circular hole is formed in the first layer of the gate electrode penetrating arrow bottom, the gray and black shielding layer, the cathode silver wire long epitaxial layer, the cathode co-drum lower layer, the cathode mutual extension line first layer, the cathode mutual extension line second layer, the cathode co-drum middle layer, the cathode mutual extension line third layer, the cathode mutual extension line fourth layer, the cathode arc-broken bottom electrode, the cathode arc-broken top electrode and the cathode co-drum covering layer are exposed in the circular hole, and the inner side surface of the circular hole in the first layer of the gate electrode penetrating arrow bottom is an upright cylindrical; forming a gate electrode stable-bending lower electrode by the printed silver paste layer on the gate electrode through arrow bottom layer; the gate electrode bending-stabilizing lower electrode is in a concave curved surface shape and is positioned on the layer of the gate electrode penetrating arrow bottom, the front tail end of the gate electrode bending-stabilizing lower electrode penetrates through the inner side surface of the layer of the circular hole on the arrow bottom towards the gate electrode, the rear tail end of the gate electrode bending-stabilizing lower electrode penetrates through the inner side surface of the layer of the circular hole on the arrow bottom far away from the gate electrode, and the front tail end of the gate electrode bending-stabilizing lower electrode is not flush with the inner side; forming a gate electrode penetrating arrow bottom layer by the printed insulating slurry layer on the gate electrode stable bending lower electrode; the gate pole penetrates through the bottom one layer of the arrow and the printed silver paste layer on the gate pole penetrates through the bottom two layers of the arrow to form a gate pole stable middle electrode; the gate electrode stable curved middle electrode is in an inclined straight slope shape and is positioned on the first layer of the gate electrode through arrow bottom and the second layer of the gate electrode through arrow bottom, the front tail end of the gate electrode stable curved middle electrode faces the inner side surface of the first layer of circular hole of the gate electrode through arrow bottom, the rear tail end of the gate electrode stable curved middle electrode faces the inner side surface of the first layer of circular hole of the gate electrode through arrow bottom, the front tail end of the gate electrode stable curved middle electrode is flush with the inner side surface of the first layer of circular hole of the gate electrode through arrow bottom, the front tail end of the gate electrode stable curved lower electrode is connected with the front part of the gate electrode stable curved middle electrode, and the; the gate electrode stable bending lower electrode and the gate electrode stable bending middle electrode are communicated with each other; the printed insulating slurry layer on the gate electrode stable bending middle electrode forms three layers of gate electrode penetrating arrow bottom; the gate electrode penetrates through the printed silver paste layers on the three layers of the arrow bottom to form a gate electrode stable-bending upper electrode; the gate electrode stable curved upper electrode is in a convex curved surface shape and is positioned on three layers of the gate electrode penetrating arrow bottom, the front tail end of the gate electrode stable curved upper electrode faces the inner side surface of a round hole of the gate electrode penetrating arrow bottom, the rear tail end of the gate electrode stable curved upper electrode faces the inner side surface of a round hole far away from the gate electrode penetrating arrow bottom, the front tail end of the gate electrode stable curved upper electrode is not flush with the inner side surface of the round hole of the gate electrode penetrating arrow bottom, the front tail end of the gate electrode stable curved upper electrode is connected with the front part of the gate electrode stable curved middle electrode, the rear tail end of the gate electrode stable curved upper electrode is connected with the rear part of the gate electrode stable curved middle electrode, the front tail end of the gate electrode stable curved upper electrode is not connected with the front tail end of the gate electrode stable; the gate electrode stable curved upper electrode and the gate electrode stable curved middle electrode are communicated with each other; forming a gate electrode penetrating arrow bottom four layers by the printed insulating slurry layer on the gray black shielding layer; forming a gate electrode silver wire long epitaxial layer by the printed silver paste layer on the gate electrode through arrow bottom four layers; the front tail end of the gate silver wire long epitaxial layer is connected with the rear tail end of the gate stable curved middle electrode; the gate electrode silver wire long epitaxial layer and the gate electrode stable curved middle electrode are communicated with each other; forming a gate electrode five-layer penetrating arrow bottom by the printed insulating slurry layers on the gate electrode stable curved middle electrode and the gate electrode stable curved upper electrode; the carbon nanotube layer is manufactured on the cathode broken arc bottom electrode and the cathode broken arc top electrode.
Specifically, the same round drum is used for fixing the arc-breaking surface cathode arrow-penetrating stable-bending gate control structure, and the rear hard transparent glass plate is arranged at the fixed position.
Specifically, the rear hard transparent glass plate is made of borosilicate glass or soda-lime glass.
The invention also provides a manufacturing process of the light-emitting backlight source of the same-circle drum pair arc-broken surface cathode arrow penetrating and bending stabilizing gate control structure, which comprises the following steps:
1) manufacturing a rear hard transparent glass plate: and (4) scribing the plane soda-lime glass to form the rear hard transparent glass plate.
2) Manufacturing a gray black shading layer: and printing insulating slurry on the rear hard transparent glass plate, and forming a gray black shading layer after baking and sintering processes.
3) Preparing a cathode silver wire long epitaxial layer: and printing silver paste on the gray black shading layer, and forming the cathode silver wire long epitaxial layer after baking and sintering processes.
4) And (3) manufacturing a cathode drum lower layer: and printing insulating slurry on the cathode silver wire long epitaxial layer, and forming a cathode co-drum lower layer after baking and sintering processes.
5) Manufacturing a cathode mutual extension wire layer: and printing silver paste in the square hole of the lower layer of the same drum of the cathode, and forming a layer of cathode mutual extension line after baking and sintering processes.
6) And (3) manufacturing two layers of cathode mutual extension wires: silver paste is printed on the upper surface of the lower layer of the same drum of the cathode, and two layers of the cathode mutually extending lines are formed after baking and sintering processes.
7) And (3) preparing a cathode drum meso-position layer: and printing insulating slurry on the upper surface of the lower layer of the cathode co-drum, and baking and sintering to form the middle layer of the cathode co-drum.
8) And (3) manufacturing three layers of cathode mutual extension wires: silver paste is printed in the square hole of the middle layer in the same drum of the cathode, and three layers of cathode mutually extending lines are formed after baking and sintering processes.
9) Manufacturing four layers of cathode mutual extension wires: and printing silver paste on the upper surface of the middle layer in the same drum of the cathode, and baking and sintering to form four layers of cathode mutually extending lines.
10) Manufacturing a cathode broken arc bottom electrode: and printing silver paste on the outer side surface of the middle layer of the cathode drum, and baking and sintering to form the cathode broken arc bottom electrode.
11) Manufacturing a cathode broken arc top electrode: and printing silver paste on the outer side surface of the middle layer of the cathode drum, and baking and sintering to form the broken-arc top electrode of the cathode.
12) And (3) manufacturing a cathode drum covering layer: and printing insulating slurry on the upper surface of the cathode drum-sharing middle layer, and forming a cathode drum-sharing covering layer after baking and sintering processes.
13) Manufacturing a gate pole penetrating arrow bottom layer: and printing insulating slurry on the gray black shielding layer, and baking and sintering to form a gate penetrating arrow bottom layer.
14) Manufacturing a gate electrode stable-bending lower electrode: and printing silver paste on the bottom layer of the gate penetrating arrow, and baking and sintering to form the gate stable-bending lower electrode.
15) Manufacturing a gate electrode through arrow bottom two layers: and printing insulating slurry on the gate electrode stable-bending lower electrode, and baking and sintering to form a gate electrode penetrating arrow bottom two layers.
16) Manufacturing a gate electrode stable bending middle electrode: silver paste is printed on the first layer of the gate electrode through arrow and the second layer of the gate electrode through arrow, and the gate electrode stable curved middle electrode is formed after baking and sintering processes.
17) Manufacturing a gate pole through arrow bottom three layers: and printing insulating slurry on the gate electrode bending-stabilizing middle electrode, and baking and sintering to form a gate electrode penetrating arrow bottom three layer.
18) Manufacturing a gate electrode stable bending upper electrode: and printing silver paste on the gate electrode through arrow bottom three layers, and baking and sintering to form the gate electrode stable curved upper electrode.
19) Manufacturing four layers of gate pole through arrow bottom: and printing insulating slurry on the gray black shielding layer, and baking and sintering to form four layers of gate penetrating arrow bottoms.
20) Manufacturing a gate electrode silver wire long epitaxial layer: and printing silver paste on the four layers of the gate penetrating arrow, and forming a gate silver wire long epitaxial layer after baking and sintering processes.
21) Manufacturing a gate pole through arrow bottom five layers: and printing insulating slurry on the gate electrode bending-stabilizing middle electrode and the gate electrode bending-stabilizing upper electrode, and baking and sintering to form five layers of gate electrode penetrating arrow bottom.
22) Cleaning the broken arc surface cathode penetrating arrow stable bending gate control structure by the same round drum: and cleaning the surface of the broken arc surface cathode penetration arrow stable bending gate control structure by the same round drum to remove impurities and dust.
23) Manufacturing a carbon nanotube layer: and manufacturing the carbon nano tube on the cathode broken arc top electrode and the cathode broken arc bottom electrode to form a carbon nano tube layer.
24) And (3) processing the carbon nanotube layer: and post-treating the carbon nano tube layer to improve the electron emission characteristic.
25) Manufacturing a front hard transparent glass plate: and scribing the plane soda-lime glass to form a front hard transparent glass plate.
26) Preparing an anode flat block membrane layer: and etching the tin-indium oxide film layer covering the surface of the front hard transparent glass plate to form an anode flat block film layer.
27) Preparing an anode silver wire long epitaxial layer: and printing silver paste on the front hard transparent glass plate, and forming the anode silver wire long epitaxial layer after baking and sintering processes.
28) Manufacturing a thin light-emitting layer: and printing fluorescent powder on the anode flat block film layer, and forming a thin light-emitting layer after a baking process.
29) Assembling the light-emitting backlight source device: mounting a getter to a non-display area of the front hard transparent glass plate; and then assembling the front hard transparent glass plate, the rear hard transparent glass plate and the glass narrow frame strip together and fixing the glass narrow frame strip by using a clamp.
30) Packaging the light-emitting backlight source device: and carrying out packaging process on the assembled light-emitting backlight source device to form a finished product.
Specifically, in step 27, silver paste is printed on the non-display area of the front hard transparent glass plate, and after the baking process, the maximum baking temperature is: 192 ℃, maximum baking temperature holding time: 7.5 minutes; placing the mixture in a sintering furnace for sintering, wherein the maximum sintering temperature is as follows: 532 ℃, maximum sintering temperature holding time: 9.5 minutes.
Specifically, in step 28, phosphor is printed on the anode flat block film layer, and then the anode flat block film layer is placed in an oven for a baking process, where the maximum baking temperature is: 152 ℃, maximum baking temperature hold time: 7.5 minutes.
Specifically, in the step 30, the packaging process includes placing the light-emitting backlight device in an oven for baking; sintering in a sintering furnace; exhausting and sealing off on an exhaust table; baking the getter on a baking machine; and finally, additionally installing pins to form a finished product.
Has the advantages that: the invention has the following remarkable progress:
firstly, in the same-circle drum pair arc-broken surface cathode arrow-penetrating stable-bending gate control structure, a cathode arc-broken bottom electrode and a cathode arc-broken top electrode are manufactured. The cathode broken arc bottom electrode surrounds the cathode drum middle layer and has a large electrode surface area; the cathode arc-breaking top electrode also surrounds the cathode drum meso-position layer, and has a large electrode surface area. Therefore, the manufacturing area of the carbon nano tube layer on the cathode broken arc bottom electrode and the cathode broken arc top electrode is greatly expanded, the cathode current of the light-emitting backlight source is favorably improved, and the improvement of the uniformity of the light-emitting intensity of the light-emitting backlight source is very beneficial.
Secondly, in the same-circle drum pair arc-broken surface cathode arrow penetration stable-bending gate control structure, the carbon nanotube layer is manufactured on a cathode arc-broken bottom electrode and a cathode arc-broken top electrode. The cathode broken arc bottom electrode has a larger electrode edge, and the cathode broken arc top electrode also has a larger electrode edge; the carbon nano tube manufactured at the edge of the electrode can fully utilize the phenomenon of 'edge electric field enhancement' to emit more cathode electrons, thereby improving the electron emission efficiency of the carbon nano tube layer and further enhancing the uniformity of the luminous intensity of the luminous backlight source.
Thirdly, in the same-circle drum pair arc-surface cathode arrow-penetrating stable-bending gate control structure, a gate stable-bending lower electrode, a gate stable-bending middle electrode and a gate stable-bending upper electrode are manufactured. The gate electrode stable-bending lower electrode, the gate electrode stable-bending middle electrode and the gate electrode stable-bending upper electrode all have good conductivity, and can transfer gate electrode potential to the surface of the carbon nano tube layer to form high electric field intensity. Meanwhile, the gate electrode stable-bending lower electrode, the gate electrode stable-bending middle electrode and the gate electrode stable-bending upper electrode play a role together, so that the electron emission of the carbon nano tube can be controlled, and the essential function of the gate electrode is embodied; the manufacturing structure is simple, the manufacturing process is stable, and the manufacturing yield of the light-emitting backlight source can be further improved.
In addition, no special manufacturing material is adopted in the light-emitting backlight source with the same-circle drum pair arc-surface cathode arrow-penetrating stable-bending gate control structure, so that the manufacturing cost of the whole light-emitting backlight source is reduced.
Drawings
Fig. 1 shows a longitudinal structure schematic diagram of a same-circle drum-to-broken arc surface cathode arrow-penetrating stable-bending gate control structure.
FIG. 2 shows a schematic diagram of a transverse structure of a same-circle drum-to-broken arc surface cathode arrow-penetrating stable-bending gate control structure.
Fig. 3 shows a schematic structural diagram of a light-emitting backlight source with a same-circle drum-to-arc-surface cathode arrow-penetrating stable-curve gating structure.
In the figure, a rear hard transparent glass plate 1, a gray-black shading layer 2, a cathode silver wire long epitaxial layer 3, a cathode co-drum lower layer 4, a cathode mutual extension wire layer 5, a cathode mutual extension lower two layer 6, a cathode co-drum middle layer 7, a cathode mutual extension wire three layer 8, a cathode mutual extension wire four layer 9, a cathode arc-broken bottom electrode 10, a cathode arc-broken top electrode 11, a cathode co-drum covering layer 12, a gate electrode through arrow bottom layer 13, a gate electrode stable lower electrode 14, a gate electrode through arrow bottom two layer 15, a gate electrode stable middle electrode 16, a gate electrode through arrow bottom three layer 17, a gate electrode stable upper electrode 18, a gate electrode through arrow bottom four layer 19, a gate silver wire long epitaxial layer 20, a gate electrode through five layer bottom 21, a carbon nanotube layer 22, a front hard transparent glass plate 23, an anode flat block film body layer 24, an anode silver wire long epitaxial layer 25, a thin light-emitting layer 26, a getter 27 and a narrow glass frame strip 28.
Detailed Description
The invention is further illustrated with reference to the following figures and examples.
The light-emitting backlight source of the same-round-drum opposite-arc-surface cathode arrow-penetrating stable-bending gated structure of the embodiment is shown in fig. 1, fig. 2 and fig. 3, and comprises a vacuum enclosure and an auxiliary element 27 located in the vacuum enclosure, wherein the vacuum enclosure is composed of a front hard transparent glass plate 23, a rear hard transparent glass plate 1 and a glass narrow frame strip 28; the front hard transparent glass plate is provided with an anode flat block film body layer 24, an anode silver wire long epitaxial layer 25 and a thin luminous layer 26, the anode flat block film body layer is connected with the anode silver wire long epitaxial layer, and the thin luminous layer is manufactured on the anode flat block film body layer; and an arrow-penetrating and curve-stabilizing gate control structure with the same round drum and the broken cambered surface is arranged on the rear hard transparent glass plate.
The same-round drum opposite-broken arc cathode arrow-penetrating stable-bending gate control structure comprises a rear hard transparent glass plate 1, a gray-black shielding layer 2, a cathode silver wire long epitaxial layer 3, a cathode same-drum lower layer 4, a cathode mutually-extending line layer 5, a cathode mutually-extending lower layer 6, a cathode same-drum middle layer 7, a cathode mutually-extending line layer 8, a cathode mutually-extending line layer four layer 9, a cathode arc-broken bottom electrode 10, a cathode arc-broken top electrode 11, a cathode same-drum covering layer 12, a gate electrode arrow-penetrating bottom layer 13, a gate electrode stable-bending lower electrode 14, a gate electrode arrow-penetrating bottom layer two 15, a gate electrode stable-bending middle electrode 16, a gate electrode arrow-penetrating bottom layer three layer 17, a gate electrode stable-bending upper electrode 18, a gate electrode arrow-penetrating bottom layer four layer 19, a gate electrode silver wire long epitaxial layer 20, a gate electrode arrow-penetrating bottom.
The substrate of the same-circle drum opposite arc-surface cathode arrow-penetrating stable-bending gate control structure is a rear hard transparent glass plate; forming a gray-black shading layer on the printed insulating paste layer on the rear hard transparent glass plate; forming a cathode silver wire long epitaxial layer on the printed silver paste layer on the gray black shading layer; the printed insulating slurry layer on the long epitaxial layer of the cathode silver wire forms a cathode co-drum lower layer; the lower surface of the cathode co-drum lower layer is a circular plane and is positioned on the cathode silver wire long epitaxial layer, the upper surface of the cathode co-drum lower layer is a circular plane, the upper surface and the lower surface of the cathode co-drum lower layer are parallel to each other, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode co-drum lower layer are superposed with each other, the diameter of the upper surface of the cathode co-drum lower layer is equal to that of the lower surface, and the outer side surface of the cathode co-drum lower layer is a cylindrical surface; square holes are formed in the lower layer of the same drum of the cathode, and a silver paste layer printed in the square holes forms a layer of cathode mutual extension lines; the cathode mutual extension wire layer and the cathode silver wire long epitaxial layer are communicated with each other; the printed silver paste layer on the upper surface of the lower layer of the cathode drum forms a cathode mutual extension line two layer; the cathode mutual extension line two layer and the cathode mutual extension line one layer are communicated with each other; the printed insulating slurry layer on the upper surface of the lower layer of the cathode drum forms a cathode drum middle layer; the lower surface of the cathode drum-sharing middle layer is a circular plane and is positioned on the upper surface of the cathode drum-sharing lower layer, the central vertical line of the lower surface of the cathode drum-sharing middle layer and the central vertical line of the upper surface of the cathode drum-sharing lower layer are overlapped with each other, the diameter of the lower surface of the cathode drum-sharing middle layer is equal to the diameter of the upper surface of the cathode drum-sharing lower layer, the upper surface of the cathode drum-sharing middle layer is a circular plane, the upper surface and the lower surface of the cathode drum-sharing middle layer are parallel to each other, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode drum-sharing middle layer are overlapped with each other, the diameter of the upper surface of the cathode drum-sharing middle layer is smaller than the diameter of the lower surface, the outer side surface of the; square holes are formed in the cathode drum middle layer, and the silver paste layer printed in the square holes forms three layers of cathode mutual extension lines; the three layers of the cathode mutual extension lines and the one layer of the cathode mutual extension lines are communicated with each other; the printed silver paste layer on the upper surface of the cathode drum median layer forms four layers of cathode mutual extension lines; the four layers of the cathode mutual extension lines and the three layers of the cathode mutual extension lines are communicated with each other; the printed silver paste layer on the outer side surface of the cathode drum and the middle layer forms a cathode broken arc bottom electrode; the cathode arc breaking bottom electrode is positioned on the outer side surface of the cathode drum median layer, the lower edge of the cathode arc breaking bottom electrode faces the lower edge direction of the outer side surface of the cathode drum median layer and is flush with the lower edge of the outer side surface of the cathode drum median layer, the upper edge of the cathode arc breaking bottom electrode faces the upper edge direction of the outer side surface of the cathode drum median layer and is not flush with the upper edge of the outer side surface of the cathode drum median layer, and the height of the upper edge of the cathode arc breaking bottom electrode is not more than half the height of the outer side surface of the cathode drum median layer; the cathode broken arc bottom electrode and the cathode mutual extension line two layers are communicated with each other; the printed silver paste layer on the outer side surface of the cathode drum meso-position layer forms a cathode broken arc top electrode; the cathode broken arc top electrode is positioned on the outer side surface of the cathode drum median layer, the upper edge of the cathode broken arc top electrode faces the upper edge direction of the outer side surface of the cathode drum median layer and is flush with the upper edge of the outer side surface of the cathode drum median layer, the lower edge of the cathode broken arc top electrode faces the lower edge direction of the outer side surface of the cathode drum median layer and is not flush with the lower edge of the outer side surface of the cathode drum median layer, and the lower edge of the cathode broken arc top electrode is higher than the half height of the outer side surface of the cathode drum median layer; the four layers of the cathode broken arc top electrode and the cathode mutual extension wire are communicated with each other; forming a cathode drum covering layer by the printed insulating slurry layer on the upper surface of the cathode drum median layer; the lower surface of the cathode drum covering layer is a circular plane and is positioned on the upper surface of the cathode drum median layer, and the central vertical line of the lower surface of the cathode drum covering layer and the central vertical line of the upper surface of the cathode drum median layer are superposed with each other; forming a gate electrode penetrating arrow bottom layer by the printed insulating slurry layer on the gray black shielding layer; the lower surface of the first layer of the gate electrode penetrating arrow bottom is a plane and is positioned on the gray and black shielding layer, a circular hole is formed in the first layer of the gate electrode penetrating arrow bottom, the gray and black shielding layer, the cathode silver wire long epitaxial layer, the cathode co-drum lower layer, the cathode mutual extension line first layer, the cathode mutual extension line second layer, the cathode co-drum middle layer, the cathode mutual extension line third layer, the cathode mutual extension line fourth layer, the cathode arc-broken bottom electrode, the cathode arc-broken top electrode and the cathode co-drum covering layer are exposed in the circular hole, and the inner side surface of the circular hole in the first layer of the gate electrode penetrating arrow bottom is an upright cylindrical; forming a gate electrode stable-bending lower electrode by the printed silver paste layer on the gate electrode through arrow bottom layer; the gate electrode bending-stabilizing lower electrode is in a concave curved surface shape and is positioned on the layer of the gate electrode penetrating arrow bottom, the front tail end of the gate electrode bending-stabilizing lower electrode penetrates through the inner side surface of the layer of the circular hole on the arrow bottom towards the gate electrode, the rear tail end of the gate electrode bending-stabilizing lower electrode penetrates through the inner side surface of the layer of the circular hole on the arrow bottom far away from the gate electrode, and the front tail end of the gate electrode bending-stabilizing lower electrode is not flush with the inner side; forming a gate electrode penetrating arrow bottom layer by the printed insulating slurry layer on the gate electrode stable bending lower electrode; the gate pole penetrates through the bottom one layer of the arrow and the printed silver paste layer on the gate pole penetrates through the bottom two layers of the arrow to form a gate pole stable middle electrode; the gate electrode stable curved middle electrode is in an inclined straight slope shape and is positioned on the first layer of the gate electrode through arrow bottom and the second layer of the gate electrode through arrow bottom, the front tail end of the gate electrode stable curved middle electrode faces the inner side surface of the first layer of circular hole of the gate electrode through arrow bottom, the rear tail end of the gate electrode stable curved middle electrode faces the inner side surface of the first layer of circular hole of the gate electrode through arrow bottom, the front tail end of the gate electrode stable curved middle electrode is flush with the inner side surface of the first layer of circular hole of the gate electrode through arrow bottom, the front tail end of the gate electrode stable curved lower electrode is connected with the front part of the gate electrode stable curved middle electrode, and the; the gate electrode stable bending lower electrode and the gate electrode stable bending middle electrode are communicated with each other; the printed insulating slurry layer on the gate electrode stable bending middle electrode forms three layers of gate electrode penetrating arrow bottom; the gate electrode penetrates through the printed silver paste layers on the three layers of the arrow bottom to form a gate electrode stable-bending upper electrode; the gate electrode stable curved upper electrode is in a convex curved surface shape and is positioned on three layers of the gate electrode penetrating arrow bottom, the front tail end of the gate electrode stable curved upper electrode faces the inner side surface of a round hole of the gate electrode penetrating arrow bottom, the rear tail end of the gate electrode stable curved upper electrode faces the inner side surface of a round hole far away from the gate electrode penetrating arrow bottom, the front tail end of the gate electrode stable curved upper electrode is not flush with the inner side surface of the round hole of the gate electrode penetrating arrow bottom, the front tail end of the gate electrode stable curved upper electrode is connected with the front part of the gate electrode stable curved middle electrode, the rear tail end of the gate electrode stable curved upper electrode is connected with the rear part of the gate electrode stable curved middle electrode, the front tail end of the gate electrode stable curved upper electrode is not connected with the front tail end of the gate electrode stable; the gate electrode stable curved upper electrode and the gate electrode stable curved middle electrode are communicated with each other; forming a gate electrode penetrating arrow bottom four layers by the printed insulating slurry layer on the gray black shielding layer; forming a gate electrode silver wire long epitaxial layer by the printed silver paste layer on the gate electrode through arrow bottom four layers; the front tail end of the gate silver wire long epitaxial layer is connected with the rear tail end of the gate stable curved middle electrode; the gate electrode silver wire long epitaxial layer and the gate electrode stable curved middle electrode are communicated with each other; forming a gate electrode five-layer penetrating arrow bottom by the printed insulating slurry layers on the gate electrode stable curved middle electrode and the gate electrode stable curved upper electrode; the carbon nanotube layer is manufactured on the cathode broken arc bottom electrode and the cathode broken arc top electrode.
The same round drum passes the arrow steady bending gate control structure to disconnected cambered surface negative pole fixed position and is the hard glass board that passes through behind.
The rear hard transparent glass plate is made of borosilicate glass or soda-lime glass.
The manufacturing process of the light-emitting backlight source of the same-circle drum pair arc-surface cathode arrow penetrating and bending stabilizing gate control structure comprises the following steps:
1) manufacturing a rear hard transparent glass plate: and (4) scribing the plane soda-lime glass to form the rear hard transparent glass plate.
2) Manufacturing a gray black shading layer: and printing insulating slurry on the rear hard transparent glass plate, and forming a gray black shading layer after baking and sintering processes.
3) Preparing a cathode silver wire long epitaxial layer: and printing silver paste on the gray black shading layer, and forming the cathode silver wire long epitaxial layer after baking and sintering processes.
4) And (3) manufacturing a cathode drum lower layer: and printing insulating slurry on the cathode silver wire long epitaxial layer, and forming a cathode co-drum lower layer after baking and sintering processes.
5) Manufacturing a cathode mutual extension wire layer: and printing silver paste in the square hole of the lower layer of the same drum of the cathode, and forming a layer of cathode mutual extension line after baking and sintering processes.
6) And (3) manufacturing two layers of cathode mutual extension wires: silver paste is printed on the upper surface of the lower layer of the same drum of the cathode, and two layers of the cathode mutually extending lines are formed after baking and sintering processes.
7) And (3) preparing a cathode drum meso-position layer: and printing insulating slurry on the upper surface of the lower layer of the cathode co-drum, and baking and sintering to form the middle layer of the cathode co-drum.
8) And (3) manufacturing three layers of cathode mutual extension wires: silver paste is printed in the square hole of the middle layer in the same drum of the cathode, and three layers of cathode mutually extending lines are formed after baking and sintering processes.
9) Manufacturing four layers of cathode mutual extension wires: and printing silver paste on the upper surface of the middle layer in the same drum of the cathode, and baking and sintering to form four layers of cathode mutually extending lines.
10) Manufacturing a cathode broken arc bottom electrode: and printing silver paste on the outer side surface of the middle layer of the cathode drum, and baking and sintering to form the cathode broken arc bottom electrode.
11) Manufacturing a cathode broken arc top electrode: and printing silver paste on the outer side surface of the middle layer of the cathode drum, and baking and sintering to form the broken-arc top electrode of the cathode.
12) And (3) manufacturing a cathode drum covering layer: and printing insulating slurry on the upper surface of the cathode drum-sharing middle layer, and forming a cathode drum-sharing covering layer after baking and sintering processes.
13) Manufacturing a gate pole penetrating arrow bottom layer: and printing insulating slurry on the gray black shielding layer, and baking and sintering to form a gate penetrating arrow bottom layer.
14) Manufacturing a gate electrode stable-bending lower electrode: and printing silver paste on the bottom layer of the gate penetrating arrow, and baking and sintering to form the gate stable-bending lower electrode.
15) Manufacturing a gate electrode through arrow bottom two layers: and printing insulating slurry on the gate electrode stable-bending lower electrode, and baking and sintering to form a gate electrode penetrating arrow bottom two layers.
16) Manufacturing a gate electrode stable bending middle electrode: silver paste is printed on the first layer of the gate electrode through arrow and the second layer of the gate electrode through arrow, and the gate electrode stable curved middle electrode is formed after baking and sintering processes.
17) Manufacturing a gate pole through arrow bottom three layers: and printing insulating slurry on the gate electrode bending-stabilizing middle electrode, and baking and sintering to form a gate electrode penetrating arrow bottom three layer.
18) Manufacturing a gate electrode stable bending upper electrode: and printing silver paste on the gate electrode through arrow bottom three layers, and baking and sintering to form the gate electrode stable curved upper electrode.
19) Manufacturing four layers of gate pole through arrow bottom: and printing insulating slurry on the gray black shielding layer, and baking and sintering to form four layers of gate penetrating arrow bottoms.
20) Manufacturing a gate electrode silver wire long epitaxial layer: and printing silver paste on the four layers of the gate penetrating arrow, and forming a gate silver wire long epitaxial layer after baking and sintering processes.
21) Manufacturing a gate pole through arrow bottom five layers: and printing insulating slurry on the gate electrode bending-stabilizing middle electrode and the gate electrode bending-stabilizing upper electrode, and baking and sintering to form five layers of gate electrode penetrating arrow bottom.
22) Cleaning the broken arc surface cathode penetrating arrow stable bending gate control structure by the same round drum: and cleaning the surface of the broken arc surface cathode penetration arrow stable bending gate control structure by the same round drum to remove impurities and dust.
23) Manufacturing a carbon nanotube layer: and manufacturing the carbon nano tube on the cathode broken arc top electrode and the cathode broken arc bottom electrode to form a carbon nano tube layer.
24) And (3) processing the carbon nanotube layer: and post-treating the carbon nano tube layer to improve the electron emission characteristic.
25) Manufacturing a front hard transparent glass plate: and scribing the plane soda-lime glass to form a front hard transparent glass plate.
26) Preparing an anode flat block membrane layer: and etching the tin-indium oxide film layer covering the surface of the front hard transparent glass plate to form an anode flat block film layer.
27) Preparing an anode silver wire long epitaxial layer: and printing silver paste on the non-display area of the front hard transparent glass plate, baking for 7.5 minutes at 192 ℃, placing the front hard transparent glass plate in a sintering furnace, and sintering for 9.5 minutes at 532 ℃ to form the anode silver wire long epitaxial layer.
28) Manufacturing a thin light-emitting layer: and printing fluorescent powder on the anode flat block film layer, and then placing the anode flat block film layer in an oven to be baked for 7.5 minutes at 152 ℃ to form a thin light-emitting layer.
29) Assembling the light-emitting backlight source device: mounting a getter to a non-display area of the front hard transparent glass plate; and then assembling the front hard transparent glass plate, the rear hard transparent glass plate and the glass narrow frame strip together and fixing the glass narrow frame strip by using a clamp.
30) Packaging the light-emitting backlight source device: packaging the assembled light-emitting backlight source device, wherein the packaging process comprises the steps of placing the light-emitting backlight source device into an oven for baking; sintering in a sintering furnace; exhausting and sealing off on an exhaust table; baking the getter on a baking machine; and finally, additionally installing pins to form a finished product.
The invention provides a thought and a method for a light-emitting backlight source with a structure of passing through an arrow and stably bending a gate on a cathode with an arc-broken surface in the same round drum, and particularly provides a plurality of methods and ways for realizing the technical scheme. All the components not specified in the present embodiment can be realized by the prior art.

Claims (8)

1. The utility model provides a with luminous backlight of drum to steady curved gate structure of arrow is worn to disconnected cambered surface negative pole, its characterized in that: the vacuum sealing body consists of a front hard transparent glass plate, a rear hard transparent glass plate and a glass narrow frame strip; the front hard transparent glass plate is provided with an anode flat block film layer, an anode silver wire long epitaxial layer and a thin luminous layer, the anode flat block film layer is connected with the anode silver wire long epitaxial layer, and the thin luminous layer is manufactured on the anode flat block film layer; and an arrow-penetrating and curve-stabilizing gate control structure with the same round drum and the broken cambered surface is arranged on the rear hard transparent glass plate.
2. The light-emitting backlight source of the same-circle drum pair arc-surface cathode arrow-penetrating stable-bending gate control structure as claimed in claim 1, is characterized in that: the substrate of the same-circle drum opposite arc-surface cathode arrow-penetrating stable-bending gate control structure is a rear hard transparent glass plate; forming a gray-black shading layer on the printed insulating paste layer on the rear hard transparent glass plate; forming a cathode silver wire long epitaxial layer on the printed silver paste layer on the gray black shading layer; the printed insulating slurry layer on the long epitaxial layer of the cathode silver wire forms a cathode co-drum lower layer; the lower surface of the cathode co-drum lower layer is a circular plane and is positioned on the cathode silver wire long epitaxial layer, the upper surface of the cathode co-drum lower layer is a circular plane, the upper surface and the lower surface of the cathode co-drum lower layer are parallel to each other, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode co-drum lower layer are superposed with each other, the diameter of the upper surface of the cathode co-drum lower layer is equal to that of the lower surface, and the outer side surface of the cathode co-drum lower layer is a cylindrical surface; square holes are formed in the lower layer of the same drum of the cathode, and a silver paste layer printed in the square holes forms a layer of cathode mutual extension lines; the cathode mutual extension wire layer and the cathode silver wire long epitaxial layer are communicated with each other; the printed silver paste layer on the upper surface of the lower layer of the cathode drum forms a cathode mutual extension line two layer; the cathode mutual extension line two layer and the cathode mutual extension line one layer are communicated with each other; the printed insulating slurry layer on the upper surface of the lower layer of the cathode drum forms a cathode drum middle layer; the lower surface of the cathode drum-sharing middle layer is a circular plane and is positioned on the upper surface of the cathode drum-sharing lower layer, the central vertical line of the lower surface of the cathode drum-sharing middle layer and the central vertical line of the upper surface of the cathode drum-sharing lower layer are overlapped with each other, the diameter of the lower surface of the cathode drum-sharing middle layer is equal to the diameter of the upper surface of the cathode drum-sharing lower layer, the upper surface of the cathode drum-sharing middle layer is a circular plane, the upper surface and the lower surface of the cathode drum-sharing middle layer are parallel to each other, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode drum-sharing middle layer are overlapped with each other, the diameter of the upper surface of the cathode drum-sharing middle layer is smaller than the diameter of the lower surface, the outer side surface of the; square holes are formed in the cathode drum middle layer, and the silver paste layer printed in the square holes forms three layers of cathode mutual extension lines; the three layers of the cathode mutual extension lines and the one layer of the cathode mutual extension lines are communicated with each other; the printed silver paste layer on the upper surface of the cathode drum median layer forms four layers of cathode mutual extension lines; the four layers of the cathode mutual extension lines and the three layers of the cathode mutual extension lines are communicated with each other; the printed silver paste layer on the outer side surface of the cathode drum and the middle layer forms a cathode broken arc bottom electrode; the cathode arc breaking bottom electrode is positioned on the outer side surface of the cathode drum median layer, the lower edge of the cathode arc breaking bottom electrode faces the lower edge direction of the outer side surface of the cathode drum median layer and is flush with the lower edge of the outer side surface of the cathode drum median layer, the upper edge of the cathode arc breaking bottom electrode faces the upper edge direction of the outer side surface of the cathode drum median layer and is not flush with the upper edge of the outer side surface of the cathode drum median layer, and the height of the upper edge of the cathode arc breaking bottom electrode is not more than half the height of the outer side surface of the cathode drum median layer; the cathode broken arc bottom electrode and the cathode mutual extension line two layers are communicated with each other; the printed silver paste layer on the outer side surface of the cathode drum meso-position layer forms a cathode broken arc top electrode; the cathode broken arc top electrode is positioned on the outer side surface of the cathode drum median layer, the upper edge of the cathode broken arc top electrode faces the upper edge direction of the outer side surface of the cathode drum median layer and is flush with the upper edge of the outer side surface of the cathode drum median layer, the lower edge of the cathode broken arc top electrode faces the lower edge direction of the outer side surface of the cathode drum median layer and is not flush with the lower edge of the outer side surface of the cathode drum median layer, and the lower edge of the cathode broken arc top electrode is higher than the half height of the outer side surface of the cathode drum median layer; the four layers of the cathode broken arc top electrode and the cathode mutual extension wire are communicated with each other; forming a cathode drum covering layer by the printed insulating slurry layer on the upper surface of the cathode drum median layer; the lower surface of the cathode drum covering layer is a circular plane and is positioned on the upper surface of the cathode drum median layer, and the central vertical line of the lower surface of the cathode drum covering layer and the central vertical line of the upper surface of the cathode drum median layer are superposed with each other; forming a gate electrode penetrating arrow bottom layer by the printed insulating slurry layer on the gray black shielding layer; the lower surface of the first layer of the gate electrode penetrating arrow bottom is a plane and is positioned on the gray and black shielding layer, a circular hole is formed in the first layer of the gate electrode penetrating arrow bottom, the gray and black shielding layer, the cathode silver wire long epitaxial layer, the cathode co-drum lower layer, the cathode mutual extension line first layer, the cathode mutual extension line second layer, the cathode co-drum middle layer, the cathode mutual extension line third layer, the cathode mutual extension line fourth layer, the cathode arc-broken bottom electrode, the cathode arc-broken top electrode and the cathode co-drum covering layer are exposed in the circular hole, and the inner side surface of the circular hole in the first layer of the gate electrode penetrating arrow bottom is an upright cylindrical; forming a gate electrode stable-bending lower electrode by the printed silver paste layer on the gate electrode through arrow bottom layer; the gate electrode bending-stabilizing lower electrode is in a concave curved surface shape and is positioned on the layer of the gate electrode penetrating arrow bottom, the front tail end of the gate electrode bending-stabilizing lower electrode penetrates through the inner side surface of the layer of the circular hole on the arrow bottom towards the gate electrode, the rear tail end of the gate electrode bending-stabilizing lower electrode penetrates through the inner side surface of the layer of the circular hole on the arrow bottom far away from the gate electrode, and the front tail end of the gate electrode bending-stabilizing lower electrode is not flush with the inner side; forming a gate electrode penetrating arrow bottom layer by the printed insulating slurry layer on the gate electrode stable bending lower electrode; the gate pole penetrates through the bottom one layer of the arrow and the printed silver paste layer on the gate pole penetrates through the bottom two layers of the arrow to form a gate pole stable middle electrode; the gate electrode stable curved middle electrode is in an inclined straight slope shape and is positioned on the first layer of the gate electrode through arrow bottom and the second layer of the gate electrode through arrow bottom, the front tail end of the gate electrode stable curved middle electrode faces the inner side surface of the first layer of circular hole of the gate electrode through arrow bottom, the rear tail end of the gate electrode stable curved middle electrode faces the inner side surface of the first layer of circular hole of the gate electrode through arrow bottom, the front tail end of the gate electrode stable curved middle electrode is flush with the inner side surface of the first layer of circular hole of the gate electrode through arrow bottom, the front tail end of the gate electrode stable curved lower electrode is connected with the front part of the gate electrode stable curved middle electrode, and the; the gate electrode stable bending lower electrode and the gate electrode stable bending middle electrode are communicated with each other; the printed insulating slurry layer on the gate electrode stable bending middle electrode forms three layers of gate electrode penetrating arrow bottom; the gate electrode penetrates through the printed silver paste layers on the three layers of the arrow bottom to form a gate electrode stable-bending upper electrode; the gate electrode stable curved upper electrode is in a convex curved surface shape and is positioned on three layers of the gate electrode penetrating arrow bottom, the front tail end of the gate electrode stable curved upper electrode faces the inner side surface of a round hole of the gate electrode penetrating arrow bottom, the rear tail end of the gate electrode stable curved upper electrode faces the inner side surface of a round hole far away from the gate electrode penetrating arrow bottom, the front tail end of the gate electrode stable curved upper electrode is not flush with the inner side surface of the round hole of the gate electrode penetrating arrow bottom, the front tail end of the gate electrode stable curved upper electrode is connected with the front part of the gate electrode stable curved middle electrode, the rear tail end of the gate electrode stable curved upper electrode is connected with the rear part of the gate electrode stable curved middle electrode, the front tail end of the gate electrode stable curved upper electrode is not connected with the front tail end of the gate electrode stable; the gate electrode stable curved upper electrode and the gate electrode stable curved middle electrode are communicated with each other; forming a gate electrode penetrating arrow bottom four layers by the printed insulating slurry layer on the gray black shielding layer; forming a gate electrode silver wire long epitaxial layer by the printed silver paste layer on the gate electrode through arrow bottom four layers; the front tail end of the gate silver wire long epitaxial layer is connected with the rear tail end of the gate stable curved middle electrode; the gate electrode silver wire long epitaxial layer and the gate electrode stable curved middle electrode are communicated with each other; forming a gate electrode five-layer penetrating arrow bottom by the printed insulating slurry layers on the gate electrode stable curved middle electrode and the gate electrode stable curved upper electrode; the carbon nanotube layer is manufactured on the cathode broken arc bottom electrode and the cathode broken arc top electrode.
3. The light-emitting backlight source of the same-circle drum pair arc-surface cathode arrow-penetrating stable-bending gate control structure as claimed in claim 1, is characterized in that: the same round drum passes the arrow steady bending gate control structure to disconnected cambered surface negative pole fixed position and is the hard glass board that passes through behind.
4. The light-emitting backlight source of the same-circle drum pair arc-surface cathode arrow-penetrating stable-bending gate control structure as claimed in claim 1, is characterized in that: the rear hard transparent glass plate is made of borosilicate glass or soda-lime glass.
5. The manufacturing process of the light-emitting backlight source with the same-circle drum pair arc-surface cathode arrow-penetrating stable-bending gate control structure as the claim 1 is characterized by comprising the following steps of:
1) manufacturing a rear hard transparent glass plate: scribing the planar soda-lime glass to form a rear hard transparent glass plate;
2) manufacturing a gray black shading layer: printing insulating slurry on the rear hard transparent glass plate, and forming a grey black shading layer after baking and sintering processes;
3) preparing a cathode silver wire long epitaxial layer: printing silver paste on the gray black shading layer, and forming a cathode silver wire long epitaxial layer after baking and sintering processes;
4) and (3) manufacturing a cathode drum lower layer: printing insulating slurry on the cathode silver wire long epitaxial layer, and forming a cathode co-drum lower layer after baking and sintering processes;
5) manufacturing a cathode mutual extension wire layer: printing silver paste in the square hole of the lower layer of the same drum of the cathode, and forming a layer of cathode mutual extension line after baking and sintering processes;
6) and (3) manufacturing two layers of cathode mutual extension wires: printing silver paste on the upper surface of the lower layer of the same drum of the cathode, and forming a cathode mutual extension line two layer after baking and sintering processes;
7) and (3) preparing a cathode drum meso-position layer: printing insulating slurry on the upper surface of the lower layer of the same-drum cathode, and forming a middle layer of the same-drum cathode after baking and sintering processes;
8) and (3) manufacturing three layers of cathode mutual extension wires: printing silver paste in a square hole of a middle layer in the same drum of the cathode, and forming three layers of cathode mutual extension lines after baking and sintering processes;
9) manufacturing four layers of cathode mutual extension wires: printing silver paste on the upper surface of the middle layer in the same drum of the cathode, and forming four layers of cathode mutually extending lines after baking and sintering processes;
10) manufacturing a cathode broken arc bottom electrode: printing silver paste on the outer side surface of the middle layer in the same drum of the cathode, and forming a cathode broken arc bottom electrode after baking and sintering processes;
11) manufacturing a cathode broken arc top electrode: printing silver paste on the outer side surface of the middle layer in the same drum of the cathode, and forming a top electrode of the broken arc of the cathode after baking and sintering processes;
12) and (3) manufacturing a cathode drum covering layer: printing insulating slurry on the upper surface of the cathode drum-sharing middle layer, and forming a cathode drum-sharing covering layer after baking and sintering processes;
13) manufacturing a gate pole penetrating arrow bottom layer: printing insulating slurry on the gray black shielding layer, and forming a gate penetrating arrow bottom layer after baking and sintering processes;
14) manufacturing a gate electrode stable-bending lower electrode: printing silver paste on the bottom layer of the gate penetrating arrow, and forming a gate stable-bending lower electrode after baking and sintering processes;
15) manufacturing a gate electrode through arrow bottom two layers: printing insulating slurry on the gate electrode stable-bending lower electrode, and forming a gate electrode penetrating arrow bottom two layers after baking and sintering processes;
16) manufacturing a gate electrode stable bending middle electrode: printing silver paste on the first layer of the gate electrode through arrow and the second layer of the gate electrode through arrow, and forming a gate electrode stable bending middle electrode after baking and sintering processes;
17) manufacturing a gate pole through arrow bottom three layers: printing insulating slurry on the gate electrode bending-stabilizing middle electrode, and forming a gate electrode penetrating arrow bottom three layers after baking and sintering processes;
18) manufacturing a gate electrode stable bending upper electrode: printing silver paste on the gate electrode through arrow bottom three layers, and forming a gate electrode stable curved upper electrode after baking and sintering processes;
19) manufacturing four layers of gate pole through arrow bottom: printing insulating slurry on the gray black shielding layer, and forming a gate penetrating arrow bottom four layers after baking and sintering processes;
20) manufacturing a gate electrode silver wire long epitaxial layer: printing silver paste on the four layers of the gate electrode penetrating arrow bottom, and forming a gate electrode silver wire long epitaxial layer after baking and sintering processes;
21) manufacturing a gate pole through arrow bottom five layers: printing insulating slurry on the gate electrode bending-stabilizing middle electrode and the gate electrode bending-stabilizing upper electrode, and forming five layers of gate electrode penetrating arrow bottoms after baking and sintering processes;
22) cleaning the broken arc surface cathode penetrating arrow stable bending gate control structure by the same round drum: cleaning the surface of the broken arc surface cathode arrow-penetrating stable-bending gate control structure on the same circular drum to remove impurities and dust;
23) manufacturing a carbon nanotube layer: manufacturing carbon nanotubes on a cathode broken arc top electrode and a cathode broken arc bottom electrode to form a carbon nanotube layer;
24) and (3) processing the carbon nanotube layer: post-processing the carbon nanotube layer to improve the electron emission characteristic;
25) manufacturing a front hard transparent glass plate: scribing the planar soda-lime glass to form a front hard transparent glass plate;
26) preparing an anode flat block membrane layer: etching the tin-indium oxide film layer covering the surface of the front hard transparent glass plate to form an anode flat block film layer;
27) preparing an anode silver wire long epitaxial layer: printing silver paste on the front hard transparent glass plate, and forming an anode silver wire long epitaxial layer after baking and sintering processes;
28) manufacturing a thin light-emitting layer: printing fluorescent powder on the anode flat block film layer, and forming a thin light-emitting layer after a baking process;
29) assembling the light-emitting backlight source device: mounting a getter to a non-display area of the front hard transparent glass plate; then, assembling the front hard transparent glass plate, the rear hard transparent glass plate and the glass narrow frame strip together, and fixing by using a clamp;
30) packaging the light-emitting backlight source device: and carrying out packaging process on the assembled light-emitting backlight source device to form a finished product.
6. The manufacturing process of the light-emitting backlight source with the same-circle drum pair arc-surface cathode arrow-penetrating stable-bending gate control structure as claimed in claim 5, is characterized in that: in step 27, printing silver paste on the non-display area of the front hard transparent glass plate, and after the baking process, baking at the maximum temperature: 192 ℃, maximum baking temperature holding time: 7.5 minutes; placing the mixture in a sintering furnace for sintering, wherein the maximum sintering temperature is as follows: 532 ℃, maximum sintering temperature holding time: 9.5 minutes.
7. The manufacturing process of the light-emitting backlight source with the same-circle drum pair arc-surface cathode arrow-penetrating stable-bending gate control structure as claimed in claim 5, is characterized in that: in step 28, printing fluorescent powder on the anode flat block film layer, and then placing the anode flat block film layer in an oven for baking, wherein the maximum baking temperature is as follows: 152 ℃, maximum baking temperature hold time: 7.5 minutes.
8. The manufacturing process of the light-emitting backlight source with the same-circle drum pair arc-surface cathode arrow-penetrating stable-bending gate control structure as claimed in claim 5, is characterized in that: in step 30, the packaging process includes baking the light-emitting backlight device in an oven; sintering in a sintering furnace; exhausting and sealing off on an exhaust table; baking the getter on a baking machine; and finally, additionally installing pins to form a finished product.
CN202010572983.1A 2020-06-22 2020-06-22 Light-emitting backlight source of arrow-penetrating, bending-stabilizing and gating structure with same-circle drum pair-broken arc-surface cathode Withdrawn CN111696839A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109411317A (en) * 2018-11-21 2019-03-01 金陵科技学院 It is misplaced the active display of the relatively angular three curved gating structure of bent main line of arc ring face cathode
CN110676142A (en) * 2019-11-07 2020-01-10 金陵科技学院 Light-emitting backlight source with convex slope connecting surface ring cathode fork branch straight-curved gate control structure
CN110808199A (en) * 2019-10-24 2020-02-18 金陵科技学院 Light-emitting backlight source with asymmetric annular inclined convex cathode staggered cover layer arc gate control structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109411317A (en) * 2018-11-21 2019-03-01 金陵科技学院 It is misplaced the active display of the relatively angular three curved gating structure of bent main line of arc ring face cathode
CN110808199A (en) * 2019-10-24 2020-02-18 金陵科技学院 Light-emitting backlight source with asymmetric annular inclined convex cathode staggered cover layer arc gate control structure
CN110676142A (en) * 2019-11-07 2020-01-10 金陵科技学院 Light-emitting backlight source with convex slope connecting surface ring cathode fork branch straight-curved gate control structure

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