CN110676141A - A luminous backlight with alternating oblique arch gated structure with double-connected cathodes around the corner of the spine - Google Patents
A luminous backlight with alternating oblique arch gated structure with double-connected cathodes around the corner of the spine Download PDFInfo
- Publication number
- CN110676141A CN110676141A CN201910993988.9A CN201910993988A CN110676141A CN 110676141 A CN110676141 A CN 110676141A CN 201910993988 A CN201910993988 A CN 201910993988A CN 110676141 A CN110676141 A CN 110676141A
- Authority
- CN
- China
- Prior art keywords
- layer
- cathode
- gate
- thorn
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052709 silver Inorganic materials 0.000 claims abstract description 120
- 239000004332 silver Substances 0.000 claims abstract description 120
- 238000004519 manufacturing process Methods 0.000 claims abstract description 89
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 87
- 239000011521 glass Substances 0.000 claims abstract description 72
- 239000010410 layer Substances 0.000 claims description 530
- 238000005245 sintering Methods 0.000 claims description 71
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 52
- 239000002041 carbon nanotube Substances 0.000 claims description 52
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 52
- 238000007639 printing Methods 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 33
- 238000005192 partition Methods 0.000 claims description 17
- 125000006850 spacer group Chemical group 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 239000005361 soda-lime glass Substances 0.000 claims description 5
- 239000005357 flat glass Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 238000012805 post-processing Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 238000012858 packaging process Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J17/00—Gas-filled discharge tubes with solid cathode
- H01J17/02—Details
- H01J17/04—Electrodes; Screens
- H01J17/06—Cathodes
- H01J17/066—Cold cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J17/00—Gas-filled discharge tubes with solid cathode
- H01J17/02—Details
- H01J17/04—Electrodes; Screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J17/00—Gas-filled discharge tubes with solid cathode
- H01J17/02—Details
- H01J17/04—Electrodes; Screens
- H01J17/12—Control electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J17/00—Gas-filled discharge tubes with solid cathode
- H01J17/38—Cold-cathode tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J17/00—Gas-filled discharge tubes with solid cathode
- H01J17/38—Cold-cathode tubes
- H01J17/48—Cold-cathode tubes with more than one cathode or anode, e.g. sequence-discharge tube, counting tube, dekatron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
技术领域technical field
本发明属于平面显示技术领域、纳米科学与技术领域、集成电路科学与技术领域、微电子科学与技术领域、光电子科学与技术领域、半导体科学与技术领域以及真空科学与技术领域的相互交叉领域,涉及到平面发光背光源的制作,具体涉及到碳纳米管阴极的平面发光背光源的制作,特别涉及到一种角刺环周双连面阴极交替斜弓门控结构的发光背光源及其制作工艺。The present invention belongs to the fields of plane display technology, nanometer science and technology, integrated circuit science and technology, microelectronics science and technology, optoelectronics science and technology, semiconductor science and technology, and vacuum science and technology. The invention relates to the manufacture of a plane light-emitting backlight source, in particular to the manufacture of a plane light-emitting backlight source of carbon nanotube cathodes, and in particular to a light-emitting backlight source with an alternate oblique arch gated structure of angle thorn ring and double-connected plane cathodes and a manufacturing process thereof.
背景技术Background technique
在适宜的真空环境下,碳纳米管能够进行电子发射,这一特性使得碳纳米管已成为了一种非常适宜的阴极制作材料。随着丝网印刷工艺的大规模推广,制作大面积的、图形化的碳纳米管阴极变得很容易,这也加速了碳纳米管阴极的制作进程。利用碳纳米管阴极而制作的发光背光源是一种真空设备;碳纳米管阴极的加速发展,无疑也推动了发光背光源设备的研究进展。In a suitable vacuum environment, carbon nanotubes can emit electrons, which makes carbon nanotubes a very suitable cathode material. With the large-scale promotion of the screen printing process, it becomes easy to fabricate large-area, patterned carbon nanotube cathodes, which also accelerates the fabrication process of carbon nanotube cathodes. The light-emitting backlight made of carbon nanotube cathodes is a kind of vacuum equipment; the accelerated development of carbon nanotube cathodes undoubtedly promotes the research progress of light-emitting backlight devices.
但是,在三极结构的发光背光源中,还存在一些技术困难需要解决。例如,第一,碳纳米管阴极的电子发射效率十分低下。在已制备的碳纳米管阴极中,有的碳纳米管能够进行较多的电子发射,有的碳纳米管仅能够进行较少的电子发射,甚至还有相当一部分碳纳米管根本就不发射电子,从而总体而言来说,碳纳米管阴极的电子发射效率很低,也十分不利于形成发光背光源的大阴极电流。第二,门极电压对碳纳米管阴极的调控性能非常差。门极电压的功能就是对碳纳米管阴极的电子发射进行控制和调节,使得碳纳米管阴极发射电子数量的多少能够随着门极电压的变化而变化;若碳纳米管阴极的电子发射并不是严格随着门极电压的变化,也就意味着碳纳米管阴极受门极电压的控制性能在减弱。第三,碳纳米管阴极的制作面积很小。碳纳米管阴极的制作面积小,也就是说,碳纳米管的数量变少了,这是十分不利于形成发光背光源的大阴极电流的。这些技术困难还需要认真考虑和解决。However, in the light-emitting backlight of the tri-pole structure, there are still some technical difficulties to be solved. For example, first, the electron emission efficiency of carbon nanotube cathodes is very low. Among the prepared carbon nanotube cathodes, some carbon nanotubes can emit more electrons, some carbon nanotubes can only emit less electrons, and even a considerable part of carbon nanotubes do not emit electrons at all Therefore, in general, the electron emission efficiency of the carbon nanotube cathode is very low, and it is also very unfavorable to form a large cathode current of the light-emitting backlight. Second, the regulation performance of the gate voltage on the CNT cathode is very poor. The function of the gate voltage is to control and adjust the electron emission of the carbon nanotube cathode, so that the number of electrons emitted by the carbon nanotube cathode can change with the change of the gate voltage; if the electron emission of the carbon nanotube cathode is not Strictly with the change of the gate voltage, it means that the control performance of the carbon nanotube cathode by the gate voltage is weakened. Third, the fabrication area of carbon nanotube cathodes is very small. The fabrication area of the carbon nanotube cathode is small, that is to say, the number of carbon nanotubes is reduced, which is very unfavorable for forming a large cathode current of the light-emitting backlight. These technical difficulties also need careful consideration and resolution.
发明内容SUMMARY OF THE INVENTION
发明目的:本发明的目的在于克服上述发光背光源中存在的缺陷和不足而提供一种制作结构简单的、发光背光源的发光亮度高的、发光背光源的发光灰度可调节性能优异的角刺环周双连面阴极交替斜弓门控结构的发光背光源及其制作工艺。Purpose of the invention: The purpose of the present invention is to overcome the defects and deficiencies existing in the above-mentioned light-emitting backlight source and provide a light-emitting backlight source with a simple manufacturing structure, high light-emitting brightness of the light-emitting backlight source, and excellent light-emitting grayscale adjustable performance of the light-emitting backlight source. The invention discloses a light-emitting backlight source with a double-connected surface cathode alternating oblique arch gate control structure around a thorn ring and a manufacturing process thereof.
技术方案:本发明的角刺环周双连面阴极交替斜弓门控结构的发光背光源,包括真空封闭体以及位于真空封闭体内的消气剂附属元件;所述的真空封闭体由前透硬玻璃板、后透硬玻璃板和玻璃窄框条构成;在前透硬玻璃板上设有阳极垫膜导传层、阳极灰银连电层和薄发光层,所述的阳极垫膜导传层和阳极灰银连电层相连,所述的薄发光层制作在阳极垫膜导传层上面;在后透硬玻璃板上设有角刺环周双连面阴极交替斜弓门控结构。Technical scheme: The light-emitting backlight source of the present invention is a light-emitting backlight with an alternate slanted arch gated structure of horn thorns, rings, double-connected surfaces, and cathodes, including a vacuum enclosure and a getter accessory element located in the vacuum enclosure; , the rear transparent hard glass plate and the glass narrow frame strip; the front transparent hard glass plate is provided with an anode pad film conductive layer, an anode gray silver connection layer and a thin light-emitting layer, and the anode pad film conductive layer and The anode gray-silver connecting layer is connected, and the thin light-emitting layer is made on the anode pad film conductive layer; the rear transparent hard glass plate is provided with an alternate oblique arch gate structure of angle thorns and circumferential double-connected cathodes.
具体地,所述的角刺环周双连面阴极交替斜弓门控结构的衬底为后透硬玻璃板;后透硬玻璃板上的印刷的绝缘浆料层形成黑透开隔层;黑透开隔层上的印刷的银浆层形成阴极灰银连电层;阴极灰银连电层上的印刷的绝缘浆料层形成阴极刺环基底层;阴极刺环基底层的下表面为圆形平面、且位于阴极灰银连电层上,阴极刺环基底层的上表面为圆形平面、且阴极刺环基底层的上表面和下表面相互平行,阴极刺环基底层的上表面直径等于下表面直径,阴极刺环基底层的上表面中心垂直线和下表面中心垂直线相互重合,阴极刺环基底层的外侧面为圆筒面;阴极刺环基底层中设有四方孔,四方孔内印刷的银浆层形成阴极折连线一层;阴极折连线一层和阴极灰银连电层是相互连通的;阴极刺环基底层上表面的印刷的银浆层形成阴极折连线二层;阴极折连线二层布满阴极刺环基底层的上表面,阴极折连线二层的外边缘和阴极刺环基底层上表面的外边缘相平齐;阴极折连线二层和阴极折连线一层是相互连通的;阴极折连线二层上的印刷的绝缘浆料层形成阴极刺环基中间层;阴极刺环基中间层的下表面为空心圆环平面、且位于阴极折连线二层上,阴极刺环基中间层的下表面外边缘和阴极折连线二层的外边缘相平齐,阴极刺环基中间层的下表面中心垂直线和阴极刺环基底层的上表面中心垂直线相互重合,阴极刺环基中间层的外侧面为倾斜的直坡面,阴极刺环基中间层的内侧面为凹陷的弧面形,阴极刺环基中间层的外侧面上边缘和内侧面上边缘相接触、且形成一个圆环线;阴极刺环基中间层外侧面上的印刷的银浆层形成阴极角刺外电极;阴极角刺外电极的上边缘朝向阴极刺环基中间层外侧面上边缘方向、且和阴极刺环基中间层外侧面上边缘相平齐,阴极角刺外电极的下边缘朝向阴极刺环基中间层外侧面下边缘方向、但不与阴极刺环极中间层外侧面下边缘相接触;阴极刺环基中间层内侧面上的印刷的银间层形成阴极角刺内电极;阴极角刺内电极布满阴极刺环基中间层内侧面,阴极角刺内电极的上边缘和阴极刺环基中间层内侧面的上边缘相平齐,阴极角刺内电极的下边缘和阴极刺环基中间层内侧面的下边缘相平齐;阴极角刺内电极和阴极折连线二层是相互连通的;阴极角刺内电极和阴极角刺外电极是相互连通的;阴极折连线二层上的印刷的绝缘浆料层形成阴极刺环基里层;阴极刺环基里层的下表面为圆形平面、且位于阴极折连线二层上,阴极刺环基里层的下表面中心垂直线和阴极刺环基底层的上表面中心垂直线相互重合,阴极刺环基里层的下表面外边缘和阴极刺环基中间层下表面内边缘相平齐,阴极刺环基里层的外侧面为倾斜的圆锥面;黑透开隔层上的印刷的绝缘浆料层形成门极斜弓底一层;门极斜弓底一层的下表面为平面、且位于黑透开隔层上,门极斜弓底一层中设有圆形孔,圆形孔中暴露出黑透开隔层、阴极灰银连电层、阴极刺环基底层、阴极折连线一层、阴极折连线二层、阴极刺环基中间层、阴极角刺外电极、阴极角刺内电极、阴极刺环基里层,门极斜弓底一层的圆形孔内侧面为圆筒面;门极斜弓底一层上表面的印刷的银浆层形成门极弓弧下电极;门极弓弧下电极为凹陷的弧面形、且凹陷的方向为门极斜弓底一层内部方向,门极弓弧下电极的前末端朝向门极斜弓底一层圆形孔内侧面方向、但不与门极斜弓底一层圆形孔内侧面相接触,门极弓弧下电极的后末端朝向远离门极斜弓底一层圆形孔内侧面方向;门极弓弧下电极上的印刷的绝缘浆料层形成门极斜弓底二层;门极斜弓底二层和门极斜弓底一层上的印刷的银浆层形成门极弓弧中电极;门极弓弧中电极为斜直坡面形、且位于门极斜弓底一层和门极斜弓底二层上,门极弓弧中电极的前末端朝向门极斜弓底一层圆形孔内侧面方向、且和门极斜弓底一层圆形孔内侧面相平齐,门极弓弧中电极的后末端朝向远离门极斜弓底一层圆形孔内侧面方向,门极弓弧中电极的后末端和门极弓弧下电极的后末端相连,门极弓弧下电极的前末端和门极弓弧中电极的中间部位相连;门极弓弧下电极和门极弓弧中电极是相互连通的;门极弓弧中电极上的印刷的绝缘浆料层形成门极斜弓底三层;门极斜弓底三层上的印刷的银浆层形成门极弓弧上电极;门极弓弧上电极为凸起的弧面形、且凸起的方向朝向远离门极斜弓底三层内部方向,门极弓弧上电极的前末端朝向门极斜弓底一层圆形孔内侧面方向、且和门极斜弓底一层圆形孔内侧面相平齐,门极弓弧上电极的后末端朝向远离门极斜弓底一层圆形孔内侧面方向,门极弓弧上电极的前末端和门极弓弧中电极的前末端相连,门极弓弧上电极的后末端和门极弓弧中电极的中间部位相连,门极弓弧上电极的后末端不与门极弓弧下电极的前末端相连;门极弓弧上电极和门极弓弧中电极是相互连通的;黑透开隔层上的印刷的绝缘浆料层形成门极斜弓底四层;门极斜弓底四层上的印刷的银浆层形成门极灰银连电层;门极灰银连电层的前末端和门极弓弧下电极的后末端相连,门极灰银连电层和门极弓弧中电极的后末端相连;门极灰银连电层和门极弓弧下电极是相互连通的;门极弓弧中电极和门极灰银连电层是相互连通的;门极弓弧上电极和门极弓弧中电极上的印刷的绝缘浆料层形成门极斜弓底五层;碳纳米管层制作在阴极角刺内电极和阴极角刺外电极上。Specifically, the substrate of the double-connected cathode alternately oblique arch gated structure with horns and rings is a rear transparent hard glass plate; the printed insulating paste layer on the rear transparent hard glass plate forms a black transparent partition layer; The printed silver paste layer on the spacer layer forms a cathode gray-silver connection layer; the printed insulating paste layer on the cathode gray-silver connection layer forms a cathode thorn ring base layer; the lower surface of the cathode thorn ring base layer is circular The upper surface of the cathode thorn ring base layer is a circular plane, and the upper surface and the lower surface of the cathode thorn ring base layer are parallel to each other, and the diameter of the upper surface of the cathode thorn ring base layer is equal to The diameter of the lower surface, the center vertical line of the upper surface of the cathode thorn ring base layer and the center vertical line of the lower surface coincide with each other, the outer side of the cathode thorn ring base layer is a cylindrical surface; the cathode thorn ring base layer is provided with square holes, square holes The inner printed silver paste layer forms a layer of cathode fold line; the first layer of cathode fold line and the cathode gray silver connection layer are interconnected; the printed silver paste layer on the upper surface of the base layer of the cathode thorn ring forms a cathode fold line The second layer; the second layer of the cathode fold line is covered with the upper surface of the base layer of the cathode thorn ring, and the outer edge of the second layer of the cathode fold line is flush with the outer edge of the upper surface of the cathode thorn ring base layer; the second layer of the cathode fold line The first layer of the cathode folded connection line is connected with each other; the printed insulating paste layer on the second layer of the cathode folded connection line forms the cathode thorn ring base intermediate layer; the lower surface of the cathode thorn ring base intermediate layer is a hollow annular plane, and Located on the second layer of the cathode thorn ring, the outer edge of the lower surface of the middle layer of the cathode thorn ring base is flush with the outer edge of the second layer of the cathode thorn ring base, and the center vertical line of the lower surface of the middle layer of the cathode thorn ring base and the cathode thorn ring The upper surface center vertical lines of the base layer overlap each other, the outer side of the cathode thorn base intermediate layer is an inclined straight slope, the inner side of the cathode thorn base intermediate layer is a concave arc shape, and the cathode thorn base intermediate layer is in the shape of a concave arc. The edge on the outer surface and the edge on the inner surface are in contact and form a circular line; the printed silver paste layer on the outer surface of the middle layer of the cathode thorn ring base forms the outer electrode of the cathode thorn; the upper edge of the outer electrode of the cathode thorn is facing The direction of the edge on the outer side of the middle layer of the cathode thorn base is flush with the edge on the outer side of the middle layer of the cathode thorn base, and the lower edge of the outer electrode of the cathode thorn base faces the direction of the lower edge of the outer side of the middle layer of the cathode thorn base, but It is not in contact with the lower edge of the outer side of the cathode thorn pole intermediate layer; the printed silver interlayer on the inner side of the cathode thorn base intermediate layer forms the cathode angle thorn inner electrode; the cathode thorn inner electrode is covered with the cathode thorn base intermediate layer On the inner side, the upper edge of the inner electrode of the cathode thorn is flush with the upper edge of the inner side of the middle layer of the cathode thorn base, and the lower edge of the inner electrode of the cathode thorn is flush with the lower edge of the inner side of the middle layer of the cathode thorn base ; The inner electrode of the cathode angle thorn and the second layer of the cathode folded line are connected with each other; the inner electrode of the cathode thorn and the outer electrode of the cathode angle thorn are connected with each other; The printed insulating paste layer on the second layer of the cathode folded line forms the cathode The basal layer of the thorn ring; the lower surface of the basal layer of the cathode thorn ring is a circular plane, and is located on the second layer of the cathodic fold line, the center vertical line of the lower surface of the basal layer of the cathode thorn ring and the upper part of the basal layer of the cathode thorn ring The vertical lines in the center of the surface coincide with each other, and the outer edge of the lower surface of the base layer of the cathode thorn ring and the cathode The inner edge of the lower surface of the middle layer of the pole thorn ring base is flush, and the outer side of the inner layer of the cathode thorn ring base layer is an inclined conical surface; the printed insulating paste layer on the black transparent spacer forms the bottom layer of the gate pole slanted bow The lower surface of the bottom layer of the gate pole oblique bow is flat, and is located on the black transparent partition layer, and a circular hole is arranged in the bottom layer of the gate pole oblique bow, and the black transparent partition layer and the cathode are exposed in the circular hole. Gray-silver connection layer, cathode thorn base layer, first layer of cathode thorns, second layer of cathode thorns, middle layer of cathode thorn base, cathode thorn outer electrode, cathode thorn inner electrode, cathode thorn base The inner side of the circular hole on the bottom layer of the gate slanted bow is a cylindrical surface; the printed silver paste layer on the upper surface of the first layer of the gate slanted bow forms the lower electrode of the gate bow; the lower electrode of the gate bow is The concave arc shape, and the direction of the concave is the inner direction of the bottom layer of the gate electrode slanted arch, the front end of the electrode under the gate electrode arch arc is facing the inner side of the circular hole on the bottom layer of the gate electrode slanted arch, but not in line with the gate electrode. The inner side of the circular hole on the bottom layer of the oblique arch is in contact, and the rear end of the electrode under the gate arc is facing away from the inner side of the circular hole on the bottom layer of the oblique arch of the gate; the insulating paste printed on the electrode under the gate arc The second layer of the gate slanted bow bottom layer is formed; the printed silver paste layer on the second layer of the gate electrode slanted bow bottom and the first layer of the gate slanted bow bottom form the gate electrode arc middle electrode; the gate electrode bow arc middle electrode is an oblique straight slope The front end of the electrode in the gate arc is facing the inner side of the circular hole on the first floor of the gate slanted bow, and is in the same direction as the gate electrode. The inner side of the circular hole on the bottom layer of the oblique arch is flush, the rear end of the electrode in the gate arc is facing away from the inner side of the circular hole on the first layer of the oblique arch of the gate, and the rear end of the electrode in the gate arc and the gate electrode The rear end of the electrode under the bow arc is connected, and the front end of the electrode under the gate bow is connected with the middle part of the electrode in the gate bow; the electrode under the gate bow and the electrode in the gate bow are connected with each other; The printed insulating paste layer on the electrode in the bow arc forms the three layers of the gate slant bow bottom; the printed silver paste layer on the three layers of the gate slant bow bottom forms the gate bow upper electrode; the gate bow upper electrode is The convex arc is in the shape of a convex arc, and the convex direction faces away from the inner direction of the third layer of the gate pole slanted bow bottom, and the front end of the electrode on the gate pole bow arc faces the direction of the inner side of the circular hole on the first layer of the gate pole slanted bow bottom, and and The inner side of the circular hole on the first layer of the gate slanted arch is flush with the inner side, the rear end of the upper electrode on the gate arch is facing away from the inner side of the circular hole on the first layer of the gate slanted arch, and the front end of the upper electrode on the gate arch is parallel to the The front end of the electrode in the gate bow is connected, the rear end of the upper electrode of the gate bow is connected with the middle part of the electrode in the gate bow, and the rear end of the upper electrode of the gate bow is not connected with the lower electrode of the gate bow. The front ends are connected; the upper electrode of the gate bow arc and the electrode in the gate bow arc are connected with each other; The printed silver paste layer on the layer forms the gate gray silver connecting layer; the front end of the gate gray silver connecting layer is connected with the rear end of the lower electrode of the gate bow, and the gate gray silver connecting layer and the gate bow are connected. The rear ends of the electrodes in the arc are connected; the gate gray silver connecting layer and the lower electrode of the gate bow arc are connected with each other; the electrode in the gate bow arc and the gate gray silver connecting layer are connected with each other; the gate electrode The upper electrode of the bow arc and the printed insulating paste layer on the middle electrode of the gate bow form the gate slanted bottom five layers; the carbon nanotube layer is made on the inner electrode of the cathode horn and the outer electrode of the cathode horn.
具体地,所述的角刺环周双连面阴极交替斜弓门控结构的固定位置为后透硬玻璃板。Specifically, the fixed position of the angle thorn annular double-plane cathode alternating oblique arch gate structure is a rear transparent hard glass plate.
具体地,所述的后透硬玻璃板的材料为平面硼硅玻璃或钠钙玻璃。Specifically, the material of the rear transparent hard glass plate is plane borosilicate glass or soda lime glass.
本发明同时提供上述的角刺环周双连面阴极交替斜弓门控结构的发光背光源的制作工艺,包括以下步骤:The present invention also provides the above-mentioned manufacturing process of the light-emitting backlight source with the above-mentioned angle thorn ring circumference double-connected cathode alternating oblique arch gated structure, comprising the following steps:
1)后透硬玻璃板的制作:对平面玻璃进行划割,形成后透硬玻璃板;1) The production of the rear transparent glass plate: the flat glass is cut to form the rear transparent glass plate;
2)黑透开隔层的制作:在后透硬玻璃板上印刷绝缘浆料,经烘烤、烧结工艺后形成黑透开隔层;2) The production of the black transparent partition layer: the insulating paste is printed on the rear transparent hard glass plate, and the black transparent partition layer is formed after the baking and sintering process;
3)阴极灰银连电层的制作:在黑透开隔层上印刷银浆,经烘烤、烧结工艺后形成阴极灰银连电层;3) The production of the cathode gray-silver connecting layer: printing silver paste on the black transparent spacer, and forming the cathode gray-silver connecting layer after baking and sintering;
4)阴极刺环基底层的制作:在阴极灰银连电层上印刷绝缘浆料,经烘烤、烧结工艺后形成阴极刺环基底层;4) Preparation of cathode thorn ring base layer: printing insulating paste on the cathode gray-silver connection layer, and forming a cathode thorn ring base layer after baking and sintering;
5)阴极折连线一层的制作:在阴极刺环基底层中四方孔内印刷银浆,经烘烤、烧结工艺后形成阴极折连线一层;5) The production of one layer of cathode folded wires: printing silver paste in the square holes in the base layer of the cathode thorn ring, and after baking and sintering, a layer of cathode folded wires is formed;
6)阴极折连线二层的制作:在阴极刺环基底层上表面上印刷银浆,经烘烤、烧结工艺后形成阴极折连线二层;6) Production of two layers of cathode folded lines: printing silver paste on the upper surface of the base layer of the cathode thorn ring, and after baking and sintering processes, two layers of cathode folded and connected lines are formed;
7)阴极刺环基中间层的制作:在阴极折连线二层上印刷绝缘浆料,经烘烤、烧结工艺后形成阴极刺环基中间层;7) The production of the cathode thorn ring base intermediate layer: printing insulating paste on the second layer of the cathode folded connection line, and forming the cathode thorn ring base intermediate layer after baking and sintering;
8)阴极角刺外电极的制作:在阴极刺环基中间层外侧面上印刷银浆,经烘烤、烧结工艺后形成阴极角刺外电极;8) The production of the cathode thorn outer electrode: printing silver paste on the outer surface of the middle layer of the cathode thorn ring base, and forming the cathode thorn outer electrode after baking and sintering;
9)阴极角刺内电极的制作:在阴极刺环基中间层内侧面上印刷银浆,经烘烤、烧结工艺后形成阴极角刺内电极;9) The production of the cathode thorn inner electrode: printing silver paste on the inner surface of the middle layer of the cathode thorn ring base, and forming the cathode thorn inner electrode after baking and sintering;
10)阴极刺环基里层的制作:在阴极折连线二层上印刷绝缘浆料,经烘烤、烧结工艺后形成阴极刺环基里层;10) Production of cathode thorn ring base layer: printing insulating paste on the second layer of cathode folded connection line, and forming cathode thorn ring base layer after baking and sintering process;
11)门极斜弓底一层的制作:在黑透开隔层上印刷绝缘浆料,经烘烤、烧结工艺后形成门极斜弓底一层;11) The production of the bottom layer of the gate pole oblique bow: printing insulating paste on the black transparent partition layer, and forming the gate pole oblique bottom layer after the baking and sintering process;
12)门极弓弧下电极的制作:在门极斜弓底一层上表面上印刷银浆,经烘烤、烧结工艺后形成门极弓弧下电极;12) Fabrication of gate arc lower electrode: printing silver paste on the upper surface of the bottom layer of the gate slanted bow, and forming the gate arc lower electrode after baking and sintering;
13)门极斜弓底二层的制作:在门极弓弧下电极上印刷绝缘浆料,经烘烤、烧结工艺后形成门极斜弓底二层;13) The production of the second layer of gate slanted bow bottom: printing insulating paste on the lower electrode of the gate bow arc, and after baking and sintering process, the second layer of gate slanted bow bottom is formed;
14)门极弓弧中电极的制作:在门极斜弓底一层和门极斜弓底二层上印刷银浆,经烘烤、烧结工艺后形成门极弓弧中电极;14) The production of the electrode in the gate bow arc: the silver paste is printed on the first layer of the gate slanted bow bottom and the second layer of the gate slanted bow bottom, and after baking and sintering, the gate electrode in the bow arc is formed;
15)门极斜弓底三层的制作:在门极弓弧中电极上印刷绝缘浆料,经烘烤、烧结工艺后形成门极斜弓底三层;15) Production of three layers of gate slanted bow bottom: printing insulating paste on the electrodes in the gate bow arc, after baking and sintering, the gate slanted bow bottom three layers are formed;
16)门极弓弧上电极的制作:在门极斜弓底三层上印刷银浆,经烘烤、烧结工艺后形成门极弓弧上电极;16) Fabrication of the upper electrode of the gate arc: printing silver paste on the bottom three layers of the oblique gate of the gate, and forming the upper electrode of the gate arc after baking and sintering;
17)门极斜弓底四层的制作:在黑透开隔层上印刷绝缘浆料,经烘烤、烧结工艺后形成门极斜弓底四层;17) The production of the four-layer gate slanted bow bottom: printing insulating paste on the black transparent partition layer, after baking and sintering, the gate slanted bow bottom four layers are formed;
18)门极灰银连电层的制作:在门极斜弓底四层上印刷银浆,经烘烤、烧结工艺后形成门极灰银连电层;18) The production of the gate gray silver connecting layer: printing silver paste on the bottom four layers of the gate slanted bow, and forming the gate gray silver connecting layer after baking and sintering;
19)门极斜弓底五层的制作:在门极弓弧上电极和门极弓弧中电极上印刷绝缘浆料,经烘烤、烧结工艺后形成门极斜弓底五层;19) Fabrication of the five-layer gate slanted bottom: printing insulating paste on the upper electrode of the gate and the middle electrode of the gate, after baking and sintering, the five-layer gate slanted bottom is formed;
20)角刺环周双连面阴极交替斜弓门控结构的清洁:对角刺环周双连面阴极交替斜弓门控结构的表面进行清洁处理,除掉杂质和灰尘;20) Cleaning of the gating structure with alternate oblique arches with double-joint cathodes around the angle thorns: clean the surface of the gating structure with alternating slanted arches with double-joint cathodes around the thorns, to remove impurities and dust;
21)碳纳米管层的制作:将碳纳米管印刷在阴极角刺外电极和阴极角刺内电极上,形成碳纳米管层;21) Production of carbon nanotube layer: carbon nanotubes are printed on the cathode horn outer electrode and the cathode horn inner electrode to form a carbon nanotube layer;
22)碳纳米管层的处理:对碳纳米管层进行后处理,改善其电子发射特性;22) Treatment of the carbon nanotube layer: post-processing the carbon nanotube layer to improve its electron emission characteristics;
23)前透硬玻璃板的制作:对平面玻璃进行划割,形成前透硬玻璃板;23) Production of front transparent hard glass plate: cutting the flat glass to form front transparent hard glass plate;
24)阳极垫膜导传层的制作:对覆盖于前透硬玻璃板表面的锡铟氧化物膜层进行刻蚀工艺,形成阳极垫膜导传层;24) Production of anode pad film conductive layer: the tin indium oxide film layer covering the surface of the front transparent hard glass plate is subjected to an etching process to form an anode pad film conductive layer;
25)阳极灰银连电层的制作:在前透硬玻璃板上印刷银浆,经烘烤、烧结工艺后形成阳极灰银连电层;25) The production of anode gray-silver connecting layer: printing silver paste on the front transparent hard glass plate, and forming the anode gray-silver connecting layer after baking and sintering;
26)薄发光层的制作:在阳极垫膜导传层上印刷荧光粉,经烘烤工艺后形成薄发光层;26) Production of thin light-emitting layer: printing phosphor powder on the conductive layer of anode pad film, and forming a thin light-emitting layer after baking process;
27)发光背光源器件装配:将消气剂安装于前透硬玻璃板的非显示区域;然后,将前透硬玻璃板、后透硬玻璃板和玻璃窄框条装配到一起,用夹子固定;27) Light-emitting backlight device assembly: install the getter on the non-display area of the front transparent hard glass plate; then, assemble the front transparent hard glass plate, the rear transparent hard glass plate and the glass narrow frame, and fix them with clips;
28)发光背光源器件封装:对已装配的发光背光源器件进行封装工艺,形成成品件。28) Encapsulation of light-emitting backlight devices: packaging the assembled light-emitting backlight devices to form finished parts.
具体地,所述步骤25中,在前透硬玻璃板的非显示区域印刷银浆,经过烘烤工艺之后,最高烘烤温度:192℃,最高烘烤温度保持时间:7.5分钟;放置在烧结炉中进行烧结,最高烧结温度:532℃,最高烧结温度保持时间:9.5分钟。Specifically, in the
具体地,所述步骤26中,在前透硬玻璃板的阳极垫膜导传层上印刷荧光粉,然后放置在烘箱中进行烘烤工艺,最高烘烤温度:152℃,最高烘烤温度保持时间:7.5分钟。Specifically, in the
具体地,所述步骤28中,封装工艺包括将发光背光源器件放入烘箱中进行烘烤;放入烧结炉中进行烧结;在排气台上进行排气、封离;在烤消机上对消气剂进行烤消;最后加装管脚形成成品件。Specifically, in the step 28, the packaging process includes placing the light-emitting backlight device in an oven for baking; putting it in a sintering furnace for sintering; exhausting and sealing off on an exhaust table; The getter is baked and eliminated; finally, the pins are added to form the finished part.
有益效果:本发明具有如下显著的进步:Beneficial effect: the present invention has following remarkable progress:
首先,在本发明角刺环周双连面阴极交替斜弓门控结构中,制作了门极弓弧下电极、门极弓弧中电极和门极弓弧上电极。一方面,门极弓弧下电极、门极弓弧上电极和门极弓弧中电极共同作用,能够将外部施加的门极电压顺利传递到碳纳米管层表面;另一方面,门极弓弧下电极、门极弓弧中电极和门极弓弧上电极能够在碳纳米管层表面形成强大电场强度,迫使碳纳米管层进行电子发射,且电子发射数量的多少随着门极电压的变化而变化,从而体现了门极电压对碳纳米管层的调控功能。再有,门极弓弧上电极、门极弓弧中电极和门极弓弧下电极的制作形状,使得门极-碳纳米管阴极之间的有效间距增大,使得二者之间的电场击穿现象不易发生,这极大提高了发光背光源的制作成品率。First, in the alternate oblique arch gate structure of the present invention, the lower electrode of the gate bow, the middle electrode of the gate bow and the upper electrode of the gate bow are fabricated. On the one hand, the lower electrode of the gate bow, the upper electrode of the gate bow and the middle electrode of the gate bow work together, and can smoothly transfer the externally applied gate voltage to the surface of the carbon nanotube layer; on the other hand, the gate bow The under-arc electrode, the gate bow middle electrode and the gate bow upper electrode can form a strong electric field on the surface of the carbon nanotube layer, forcing the carbon nanotube layer to emit electrons, and the number of electron emission varies with the gate voltage. changes, thus reflecting the regulation function of the gate voltage on the carbon nanotube layer. Furthermore, the fabrication shapes of the upper electrode of the gate bow, the middle electrode of the gate bow, and the lower electrode of the gate bow increase the effective distance between the gate and the carbon nanotube cathode, so that the electric field between the two is increased. The breakdown phenomenon is not easy to occur, which greatly improves the manufacturing yield of the light-emitting backlight.
其次,在本发明角刺环周双连面阴极交替斜弓门控结构中,制作了阴极角刺外电极和阴极角刺内电极。阴极角刺外电极位于阴极刺环基中间层外侧面上,并环绕着阴极刺环基里层;阴极角刺内电极位于阴极刺环基中间层内侧面上,并环绕着阴极刺环基里层。阴极角刺外电极和阴极角刺内电极均具有很大的表面积;当碳纳米管层被制作在阴极角刺外电极和阴极角刺内电极上以后,使得碳纳米管层的制作面积也有效增大了,那也就是说,能够进行电子发射的碳纳米管数量有效增多了,这对进一步改善发光背光源的发光灰度可调节性能、提高发光背光源的发光亮度都是有益的。Secondly, in the gating structure of the present invention, an outer electrode of the cathodic horn and an inner electrode of the cathodic horn are fabricated in the gating structure of the present invention. The cathodic angle thorn outer electrode is located on the outer side of the cathode thorn base intermediate layer and surrounds the cathode thorn base layer; the cathode horn thorn inner electrode is located on the inner side of the cathode thorn base intermediate layer and surrounds the cathode thorn base layer Floor. Both the cathodic horn outer electrode and the cathodic horn inner electrode have large surface areas; when the carbon nanotube layer is fabricated on the cathodic horn outer electrode and the cathodic horn inner electrode, the fabrication area of the carbon nanotube layer is also effective. It means that the number of carbon nanotubes capable of electron emission is effectively increased, which is beneficial to further improving the luminous grayscale adjustment performance of the light-emitting backlight and improving the light-emitting brightness of the light-emitting backlight.
第三,在本发明角刺环周双连面阴极交替斜弓门控结构中,碳纳米管层制作在了阴极角刺外电极和阴极角刺内电极上。阴极角刺外电极和阴极角刺内电极都具有很大的阴极边缘,当碳纳米管层被制作在阴极角刺外电极和阴极角刺内电极上以后,处于边缘位置的碳纳米管就能够充分利用“边缘电场增强”现象,进行更多的电子发射;那么发光背光源的阴极电流就会变大,这对于增大发光背光源的阴极电流是极其有利的。同时,阴极角刺外电极和阴极角刺内电极均具有良好的导电性能,能够为碳纳米管层提供所需的阴极电势,这也有助于进一步降低发光背光源的使用功率。Third, in the gating structure of the present invention, the carbon nanotube layer is fabricated on the outer electrode of the thorn and the inner electrode of the thorn. Both the cathode horn outer electrode and the cathodic horn inner electrode have a large cathode edge. When the carbon nanotube layer is fabricated on the cathode horn outer electrode and the cathode horn inner electrode, the carbon nanotubes in the edge position can be Make full use of the phenomenon of "fringe electric field enhancement" to carry out more electron emission; then the cathode current of the light-emitting backlight will become larger, which is extremely beneficial for increasing the cathode current of the light-emitting backlight. At the same time, both the cathode horn outer electrode and the cathode horn inner electrode have good electrical conductivity, which can provide the required cathode potential for the carbon nanotube layer, which also helps to further reduce the usage power of the light-emitting backlight.
此外,在本发明角刺环周双连面阴极交替斜弓门控结构的发光背光源中,没有采用特殊的制作材料,这有助于进一步降低整体发光背光源的制作成本。In addition, in the light-emitting backlight with the alternate slanted bow gated structure of the corner thorn ring and the double-plane cathode alternately, no special manufacturing materials are used, which helps to further reduce the manufacturing cost of the overall light-emitting backlight.
附图说明Description of drawings
图1是本发明实施例中角刺环周双连面阴极交替斜弓门控结构的纵向结构示意图。FIG. 1 is a longitudinal structural schematic diagram of an alternate slanted arch gate structure of a horn thorn circumferential double-plane cathode in an embodiment of the present invention.
图2是本发明实施例中角刺环周双连面阴极交替斜弓门控结构的横向结构示意图。FIG. 2 is a schematic diagram of the lateral structure of the alternate oblique arch gate structure of the horn thorn circumferential double-plane cathode in the embodiment of the present invention.
图3是本发明实施例中角刺环周双连面阴极交替斜弓门控结构的发光背光源的结构示意图。FIG. 3 is a schematic structural diagram of a light-emitting backlight with an alternate slanted arch gated structure of double-connected cathodes around a thorn and a ring in accordance with an embodiment of the present invention.
图中,后透硬玻璃板1、黑透开隔层2、阴极灰银连电层3、阴极刺环基底层4、阴极折连线一层5、阴极折连线二层6、阴极刺环基中间层7、阴极角刺外电极8、阴极角刺内电极9、阴极刺环基里层10、门极斜弓底一层11、门极弓弧下电极12、门极斜弓底二层13、门极弓弧中电极14、门极斜弓底三层15、门极弓弧上电极16、门极斜弓底四层17、门极灰银连电层18、门极斜弓底五层19、碳纳米管层20、前透硬玻璃板21、阳极垫膜导传层22、阳极灰银连电层23、薄发光层24、消气剂25、玻璃窄框条26。In the figure, the back transparent
具体实施方式Detailed ways
下面结合附图和实施例对本发明进行进一步说明,但本发明并不局限于本实施例。The present invention will be further described below with reference to the accompanying drawings and embodiments, but the present invention is not limited to this embodiment.
本实施例的角刺环周双连面阴极交替斜弓门控结构的发光背光源如图1、图2和图3所示,包括真空封闭体以及位于真空封闭体内的消气剂25附属元件;所述的真空封闭体由前透硬玻璃板21、后透硬玻璃板1和玻璃窄框条26构成;在前透硬玻璃板上有阳极垫膜导传层22、阳极灰银连电层23和薄发光层24,所述的阳极垫膜导传层和阳极灰银连电层相连,所述的薄发光层制作在阳极垫膜导传层上面;在后透硬玻璃板上有角刺环周双连面阴极交替斜弓门控结构。The light-emitting backlight source of the angle thorn ring circumference double-connected cathode alternating oblique arch gate structure of the present embodiment is shown in FIG. 1, FIG. 2 and FIG. 3, including a vacuum enclosure and an accessory element of a
角刺环周双连面阴极交替斜弓门控结构包括后透硬玻璃板1、黑透开隔层2、阴极灰银连电层3、阴极刺环基底层4、阴极折连线一层5、阴极折连线二层6、阴极刺环基中间层7、阴极角刺外电极8、阴极角刺内电极9、阴极刺环基里层10、门极斜弓底一层11、门极弓弧下电极12、门极斜弓底二层13、门极弓弧中电极14、门极斜弓底三层15、门极弓弧上电极16、门极斜弓底四层17、门极灰银连电层18、门极斜弓底五层19、碳纳米管层20。The angle-thorn ring-circumferential double-connected cathode alternate oblique arch gate structure includes a rear transparent
所述的角刺环周双连面阴极交替斜弓门控结构的衬底为后透硬玻璃板1;后透硬玻璃板1上的印刷的绝缘浆料层形成黑透开隔层2;黑透开隔层2上的印刷的银浆层形成阴极灰银连电层3;阴极灰银连电层3上的印刷的绝缘浆料层形成阴极刺环基底层4;阴极刺环基底层4的下表面为圆形平面、且位于阴极灰银连电层3上,阴极刺环基底层4的上表面为圆形平面、且阴极刺环基底层4的上表面和下表面相互平行,阴极刺环基底层4的上表面直径等于下表面直径,阴极刺环基底层4的上表面中心垂直线和下表面中心垂直线相互重合,阴极刺环基底层4的外侧面为圆筒面;阴极刺环基底层4中设有四方孔,四方孔内印刷的银浆层形成阴极折连线一层5;阴极折连线一层5和阴极灰银连电层3是相互连通的;阴极刺环基底层4上表面的印刷的银浆层形成阴极折连线二层6;阴极折连线二层6布满阴极刺环基底层4的上表面,阴极折连线二层6的外边缘和阴极刺环基底层4上表面的外边缘相平齐;阴极折连线二层6和阴极折连线一层5是相互连通的;阴极折连线二层6上的印刷的绝缘浆料层形成阴极刺环基中间层7;阴极刺环基中间层7的下表面为空心圆环平面、且位于阴极折连线二层6上,阴极刺环基中间层7的下表面外边缘和阴极折连线二层6的外边缘相平齐,阴极刺环基中间层7的下表面中心垂直线和阴极刺环基底层4的上表面中心垂直线相互重合,阴极刺环基中间层7的外侧面为倾斜的直坡面,阴极刺环基中间层7的内侧面为凹陷的弧面形,阴极刺环基中间层7的外侧面上边缘和内侧面上边缘相接触、且形成一个圆环线;阴极刺环基中间层7外侧面上的印刷的银浆层形成阴极角刺外电极8;阴极角刺外电极8的上边缘朝向阴极刺环基中间层7外侧面上边缘方向、且和阴极刺环基中间层7外侧面上边缘相平齐,阴极角刺外电极8的下边缘朝向阴极刺环基中间层7外侧面下边缘方向、但不与阴极刺环基中间层7外侧面下边缘相接触;阴极刺环基中间层7内侧面上的印刷的银间层形成阴极角刺内电极9;阴极角刺内电极9布满阴极刺环基中间层7内侧面,阴极角刺内电极9的上边缘和阴极刺环基中间层7内侧面的上边缘相平齐,阴极角刺内电极9的下边缘和阴极刺环基中间层7内侧面的下边缘相平齐;阴极角刺内电极9和阴极折连线二层6是相互连通的;阴极角刺内电极9和阴极角刺外电极8是相互连通的;阴极折连线二层6上的印刷的绝缘浆料层形成阴极刺环基里层10;阴极刺环基里层10的下表面为圆形平面、且位于阴极折连线二层6上,阴极刺环基里层10的下表面中心垂直线和阴极刺环基底层4的上表面中心垂直线相互重合,阴极刺环基里层10的下表面外边缘和阴极刺环基中间层7下表面内边缘相平齐,阴极刺环基里层10的外侧面为倾斜的圆锥面;黑透开隔层2上的印刷的绝缘浆料层形成门极斜弓底一层11;门极斜弓底一层11的下表面为平面、且位于黑透开隔层2上,门极斜弓底一层11中设有圆形孔,圆形孔中暴露出黑透开隔层2、阴极灰银连电层3、阴极刺环基底层4、阴极折连线一层5、阴极折连线二层6、阴极刺环基中间层7、阴极角刺外电极8、阴极角刺内电极9、阴极刺环基里层10,门极斜弓底一层11的圆形孔内侧面为圆筒面;门极斜弓底一层11上表面的印刷的银浆层形成门极弓弧下电极12;门极弓弧下电极12为凹陷的弧面形、且凹陷的方向为门极斜弓底一层11内部方向,门极弓弧下电极12的前末端朝向门极斜弓底一层11圆形孔内侧面方向、但不与门极斜弓底一层11圆形孔内侧面相接触,门极弓弧下电极12的后末端朝向远离门极斜弓底一层11圆形孔内侧面方向;门极弓弧下电极12上的印刷的绝缘浆料层形成门极斜弓底二层13;门极斜弓底二层13和门极斜弓底一层11上的印刷的银浆层形成门极弓弧中电极14;门极弓弧中电极14为斜直坡面形、且位于门极斜弓底一层11和门极斜弓底二层13上,门极弓弧中电极14的前末端朝向门极斜弓底一层11圆形孔内侧面方向、且和门极斜弓底一层11圆形孔内侧面相平齐,门极弓弧中电极14的后末端朝向远离门极斜弓底一层11圆形孔内侧面方向,门极弓弧中电极14的后末端和门极弓弧下电极12的后末端相连,门极弓弧下电极12的前末端和门极弓弧中电极14的中间部位相连;门极弓弧下电极12和门极弓弧中电极14是相互连通的;门极弓弧中电极14上的印刷的绝缘浆料层形成门极斜弓底三层15;门极斜弓底三层15上的印刷的银浆层形成门极弓弧上电极16;门极弓弧上电极16为凸起的弧面形、且凸起的方向朝向远离门极斜弓底三层15内部方向,门极弓弧上电极16的前末端朝向门极斜弓底一层11圆形孔内侧面方向、且和门极斜弓底一层11圆形孔内侧面相平齐,门极弓弧上电极16的后末端朝向远离门极斜弓底一层11圆形孔内侧面方向,门极弓弧上电极16的前末端和门极弓弧中电极14的前末端相连,门极弓弧上电极16的后末端和门极弓弧中电极14的中间部位相连,门极弓弧上电极16的后末端不与门极弓弧下电极12的前末端相连;门极弓弧上电极16和门极弓弧中电极14是相互连通的;黑透开隔层2上的印刷的绝缘浆料层形成门极斜弓底四层17;门极斜弓底四层17上的印刷的银浆层形成门极灰银连电层18;门极灰银连电层18的前末端和门极弓弧下电极12的后末端相连,门极灰银连电层18和门极弓弧中电极14的后末端相连;门极灰银连电层18和门极弓弧下电极12是相互连通的;门极弓弧中电极14和门极灰银连电层18是相互连通的;门极弓弧上电极16和门极弓弧中电极14上的印刷的绝缘浆料层形成门极斜弓底五层19;碳纳米管层20制作在阴极角刺内电极和阴极角刺外电极上。The substrate of the angle-thorn ring-circumferential double-connected cathode alternating oblique arch gate structure is a rear transparent
所述的角刺环周双连面阴极交替斜弓门控结构的固定位置为后透硬玻璃板。The fixed position of the angle thorn circumferential double-faced cathode alternating oblique arch gate structure is a rear transparent hard glass plate.
所述的后透硬玻璃板的材料为平面钠钙玻璃。The material of the rear transparent hard glass plate is plane soda lime glass.
上述的角刺环周双连面阴极交替斜弓门控结构的发光背光源的制作工艺,包括以下步骤:The above-mentioned manufacturing process of the light-emitting backlight source with the alternate oblique arch gated structure of the double-connected cathodes around the thorn thorn, comprises the following steps:
1)后透硬玻璃板的制作:对平面钠钙玻璃进行划割,形成后透硬玻璃板。1) Production of rear transparent hard glass plate: The plane soda lime glass is cut to form a rear transparent glass plate.
2)黑透开隔层的制作:在后透硬玻璃板上印刷绝缘浆料,经烘烤、烧结工艺后形成黑透开隔层。2) The production of the black transparent partition layer: the insulating paste is printed on the rear transparent hard glass plate, and the black transparent partition layer is formed after the baking and sintering process.
3)阴极灰银连电层的制作:在黑透开隔层上印刷银浆,经烘烤、烧结工艺后形成阴极灰银连电层。3) Production of the cathode gray-silver connecting layer: printing silver paste on the black transparent spacer, and forming the cathode gray-silver connecting layer after baking and sintering.
4)阴极刺环基底层的制作:在阴极灰银连电层上印刷绝缘浆料,经烘烤、烧结工艺后形成阴极刺环基底层。4) Preparation of cathode thorn ring base layer: printing insulating paste on the cathode gray-silver connecting layer, and forming a cathode thorn ring base layer after baking and sintering processes.
5)阴极折连线一层的制作:在阴极刺环基底层中四方孔内印刷银浆,经烘烤、烧结工艺后形成阴极折连线一层。5) Fabrication of one layer of cathode folded wires: printing silver paste in the square holes in the base layer of the cathode thorn ring, and after baking and sintering, a layer of cathode folded wires is formed.
6)阴极折连线二层的制作:在阴极刺环基底层上表面上印刷银浆,经烘烤、烧结工艺后形成阴极折连线二层。6) Production of the second layer of the cathode folded connection line: printing silver paste on the upper surface of the cathode thorn ring base layer, and after the baking and sintering process, the second layer of the cathode folded connection line is formed.
7)阴极刺环基中间层的制作:在阴极折连线二层上印刷绝缘浆料,经烘烤、烧结工艺后形成阴极刺环基中间层。7) The production of the cathode thorn ring-based intermediate layer: the insulating paste is printed on the second layer of the cathode folded connection line, and the cathode thorn ring-based intermediate layer is formed after the baking and sintering process.
8)阴极角刺外电极的制作:在阴极刺环基中间层外侧面上印刷银浆,经烘烤、烧结工艺后形成阴极角刺外电极。8) The production of the cathode angle stab outer electrode: the silver paste is printed on the outer surface of the middle layer of the cathode stab ring base, and the cathode angle stab outer electrode is formed after the baking and sintering process.
9)阴极角刺内电极的制作:在阴极刺环基中间层内侧面上印刷银浆,经烘烤、烧结工艺后形成阴极角刺内电极。9) Production of cathode thorn inner electrode: printing silver paste on the inner surface of the middle layer of the cathode thorn ring base, and forming the cathode thorn inner electrode after baking and sintering.
10)阴极刺环基里层的制作:在阴极折连线二层上印刷绝缘浆料,经烘烤、烧结工艺后形成阴极刺环基里层。10) The production of the base layer of the cathode thorn ring: the insulating paste is printed on the second layer of the cathode folded connection line, and the base layer of the cathode thorn ring is formed after the baking and sintering process.
11)门极斜弓底一层的制作:在黑透开隔层上印刷绝缘浆料,经烘烤、烧结工艺后形成门极斜弓底一层。11) The production of the bottom layer of the gate slanted bow: the insulating paste is printed on the black transparent spacer, and the bottom layer of the gate slanted bow is formed after the baking and sintering process.
12)门极弓弧下电极的制作:在门极斜弓底一层上表面上印刷银浆,经烘烤、烧结工艺后形成门极弓弧下电极。12) Fabrication of the electrode under the gate arc: printing silver paste on the upper surface of the bottom layer of the oblique gate of the gate, after baking and sintering, the electrode under the gate arc is formed.
13)门极斜弓底二层的制作:在门极弓弧下电极上印刷绝缘浆料,经烘烤、烧结工艺后形成门极斜弓底二层。13) Fabrication of the second layer of the gate slanted bow bottom: The insulating paste is printed on the lower electrode of the gate bow arc, and the second layer of the gate slanted bow bottom is formed after the baking and sintering process.
14)门极弓弧中电极的制作:在门极斜弓底一层和门极斜弓底二层上印刷银浆,经烘烤、烧结工艺后形成门极弓弧中电极。14) The production of the electrode in the gate bow arc: the silver paste is printed on the first layer of the gate slanted bow bottom and the second layer of the gate slanted bow bottom, and the gate bow mid-electrode is formed after the baking and sintering process.
15)门极斜弓底三层的制作:在门极弓弧中电极上印刷绝缘浆料,经烘烤、烧结工艺后形成门极斜弓底三层。15) Fabrication of three-layer gate slanted bottom: printing insulating paste on the electrodes in the gated arc, and after baking and sintering, the gate slanted bottom three layers are formed.
16)门极弓弧上电极的制作:在门极斜弓底三层上印刷银浆,经烘烤、烧结工艺后形成门极弓弧上电极。16) Fabrication of the upper electrode of the gate bow arc: The silver paste is printed on the bottom three layers of the gate bow, and the upper electrode of the gate bow arc is formed after the baking and sintering process.
17)门极斜弓底四层的制作:在黑透开隔层上印刷绝缘浆料,经烘烤、烧结工艺后形成门极斜弓底四层。17) Fabrication of the four-layer gate slanted bottom layer: printing insulating paste on the black transparent spacer, and after baking and sintering, the four-layer gate slanted bow bottom is formed.
18)门极灰银连电层的制作:在门极斜弓底四层上印刷银浆,经烘烤、烧结工艺后形成门极灰银连电层。18) Production of the gate gray silver connecting layer: printing silver paste on the bottom four layers of the gate slanted bow, and forming the gate gray silver connecting layer after baking and sintering.
19)门极斜弓底五层的制作:在门极弓弧上电极和门极弓弧中电极上印刷绝缘浆料,经烘烤、烧结工艺后形成门极斜弓底五层。19) Fabrication of the five-layer gate slanted bottom: printing insulating paste on the upper electrode of the gate and the middle electrode of the gate, after baking and sintering, the five-layer gate slanted bottom is formed.
20)角刺环周双连面阴极交替斜弓门控结构的清洁:对角刺环周双连面阴极交替斜弓门控结构的表面进行清洁处理,除掉杂质和灰尘。20) Cleaning of the gating structure with alternate oblique arches with double-joint cathodes around the corner thorns: clean the surface of the gating structure with alternating slanted arches with double-joint cathodes around the thorns, and remove impurities and dust.
21)碳纳米管层的制作:将碳纳米管印刷在阴极角刺外电极和阴极角刺内电极上,形成碳纳米管层。21) Fabrication of carbon nanotube layer: carbon nanotubes are printed on the outer electrode of the cathode horn and the inner electrode of the cathode horn to form a carbon nanotube layer.
22)碳纳米管层的处理:对碳纳米管层进行后处理,改善其电子发射特性。22) Treatment of the carbon nanotube layer: post-processing the carbon nanotube layer to improve its electron emission characteristics.
23)前透硬玻璃板的制作:对平面钠钙玻璃进行划割,形成前透硬玻璃板。23) Production of front transparent hard glass plate: cutting the plane soda lime glass to form front transparent hard glass plate.
24)阳极垫膜导传层的制作:对覆盖于前透硬玻璃板表面的锡铟氧化物膜层进行刻蚀工艺,形成阳极垫膜导传层。24) Fabrication of the conductive layer of the anode pad film: perform an etching process on the tin indium oxide film layer covering the surface of the front transparent hard glass plate to form the conductive layer of the anode pad film.
25)阳极灰银连电层的制作:在前透硬玻璃板上印刷银浆,经烘烤、烧结工艺后形成阳极灰银连电层。25) Fabrication of anode gray-silver connecting layer: printing silver paste on the front transparent hard glass plate, and forming an anode gray-silver connecting layer after baking and sintering.
26)薄发光层的制作:在阳极垫膜导传层上印刷荧光粉,经烘烤工艺后形成薄发光层。26) Production of thin light-emitting layer: printing phosphor powder on the conductive layer of the anode pad film, and forming a thin light-emitting layer after a baking process.
27)发光背光源器件装配:将消气剂安装于前透硬玻璃板的非显示区域;然后,将前透硬玻璃板、后透硬玻璃板和玻璃窄框条装配到一起,用夹子固定。27) Light-emitting backlight device assembly: install the getter on the non-display area of the front transparent hard glass plate; then, assemble the front transparent hard glass plate, the rear transparent hard glass plate and the narrow glass frame, and fix them with clips.
28)发光背光源器件封装:对已装配的发光背光源器件进行封装,将发光背光源器件放入烘箱中进行烘烤;放入烧结炉中进行烧结;在排气台上进行排气、封离;在烤消机上对消气剂进行烤消;最后加装管脚形成成品件。28) Light-emitting backlight device packaging: package the assembled light-emitting backlight device, put the light-emitting backlight device in an oven for baking; put it in a sintering furnace for sintering; The getter is baked on the baking machine; finally, the pins are added to form the finished part.
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910993988.9A CN110676141A (en) | 2019-10-18 | 2019-10-18 | A luminous backlight with alternating oblique arch gated structure with double-connected cathodes around the corner of the spine |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910993988.9A CN110676141A (en) | 2019-10-18 | 2019-10-18 | A luminous backlight with alternating oblique arch gated structure with double-connected cathodes around the corner of the spine |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110676141A true CN110676141A (en) | 2020-01-10 |
Family
ID=69083107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910993988.9A Withdrawn CN110676141A (en) | 2019-10-18 | 2019-10-18 | A luminous backlight with alternating oblique arch gated structure with double-connected cathodes around the corner of the spine |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110676141A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111463091A (en) * | 2020-04-08 | 2020-07-28 | 金陵科技学院 | Light-emitting backlight source with scale-time non-continuous hollow inclined cathode double-arch curved flat gate control structure |
CN112071729A (en) * | 2020-09-18 | 2020-12-11 | 金陵科技学院 | Light-emitting backlight source with asymmetric opposite hollow-faced cathode inclined hook top arc gate control structure |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1536608A (en) * | 2003-04-03 | 2004-10-13 | �廪��ѧ | A field emission display device |
CN101071742A (en) * | 2007-06-20 | 2007-11-14 | 中原工学院 | Flat-panel display device with branched side-bottom gate modulation structure and its preparing process |
CN106847654A (en) * | 2017-01-03 | 2017-06-13 | 金陵科技学院 | Curved surface circle necking solely gates active display of the beveling rotation mountain ring along cathode construction |
CN109411316A (en) * | 2018-11-21 | 2019-03-01 | 金陵科技学院 | The active display of the slow side arc idle loop face cathode joint inclination angle gating structure of asymmetric double |
CN109411317A (en) * | 2018-11-21 | 2019-03-01 | 金陵科技学院 | It is misplaced the active display of the relatively angular three curved gating structure of bent main line of arc ring face cathode |
-
2019
- 2019-10-18 CN CN201910993988.9A patent/CN110676141A/en not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1536608A (en) * | 2003-04-03 | 2004-10-13 | �廪��ѧ | A field emission display device |
CN101071742A (en) * | 2007-06-20 | 2007-11-14 | 中原工学院 | Flat-panel display device with branched side-bottom gate modulation structure and its preparing process |
CN106847654A (en) * | 2017-01-03 | 2017-06-13 | 金陵科技学院 | Curved surface circle necking solely gates active display of the beveling rotation mountain ring along cathode construction |
CN109411316A (en) * | 2018-11-21 | 2019-03-01 | 金陵科技学院 | The active display of the slow side arc idle loop face cathode joint inclination angle gating structure of asymmetric double |
CN109411317A (en) * | 2018-11-21 | 2019-03-01 | 金陵科技学院 | It is misplaced the active display of the relatively angular three curved gating structure of bent main line of arc ring face cathode |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111463091A (en) * | 2020-04-08 | 2020-07-28 | 金陵科技学院 | Light-emitting backlight source with scale-time non-continuous hollow inclined cathode double-arch curved flat gate control structure |
CN112071729A (en) * | 2020-09-18 | 2020-12-11 | 金陵科技学院 | Light-emitting backlight source with asymmetric opposite hollow-faced cathode inclined hook top arc gate control structure |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110808199A (en) | Light-emitting backlight source with asymmetric annular inclined convex cathode staggered cover layer arc gate control structure | |
CN106128920B (en) | Branch's silver gates the active display for many faceted pebble composite cathode structures that interlock | |
CN109411317B (en) | A luminescent display with staggered relative angular arc torus cathode tri-curved trunk bend gated structure | |
CN106128922B (en) | The active display of the oblique straight upper gating structure of many rib shape negative electrodes three of terrace with edge job mix | |
CN106024556B (en) | Luminescent display with gating structure on double-sided circular flat-concave sharp-pointed thorn cathode combination slope | |
CN110828264A (en) | Light-emitting backlight source with annular-column convex-concave continuous surface cathode double-homonymous arc gate control structure | |
CN109494143B (en) | Light-emitting display with lateral body cathode slanted crab claw branch line gated structure with streamlined double arcs | |
CN109411318B (en) | A luminescent display with a curved arc gated structure with a curved heterolateral hollow toroid cathode back-to-anticoline | |
CN110806657A (en) | Light-emitting backlight source of circumferential doubly-connected concave cathode reinforced arc straight slope gate control structure | |
CN110676141A (en) | A luminous backlight with alternating oblique arch gated structure with double-connected cathodes around the corner of the spine | |
CN110676142A (en) | Light-emitting backlight source with convex slope connecting surface ring cathode fork branch straight-curved gate control structure | |
CN109473327B (en) | A luminescent display based on a hybrid line-gated structure with a cascaded double goose-wing hollow ring tip body cathode slope wave | |
CN110690091A (en) | Light-emitting backlight source with single-ring pyramid inclined surface cathode concave straight arc segment gated structure | |
CN111048374A (en) | Light-emitting backlight source with three-arc gated structure with scattered double hollow toroidal cathodes | |
CN106024557B (en) | The active display of the reverse relatively oblique straight two-door control side's of being misplaced ring bar cathode construction | |
CN111403254A (en) | Light-emitting backlight with non-coordinated double-sided cathode chamfered single-point gated structure | |
CN110676138B (en) | Light-emitting backlight source with single-sequence circular convex surface cathode multi-finned arc gated structure | |
CN110676140A (en) | Light-emitting backlight with three back-arc layer gated structure of single-ring trough-shaped curved cathode | |
CN110676139A (en) | A luminous backlight with a continuous double-slope cathode concave-convex arc stack gated structure | |
CN106847653A (en) | The unilateral biasing of relative superiority or inferiority solely gates many active displays along cathode construction in the how curved different ring shirt rim in bottom | |
CN1909157A (en) | Globular cactus type tip cathode array structural panel display device and its production technique | |
CN111524767A (en) | Light-emitting backlight source of gate control structure with serially-connected peripheral ring swing sector cathode double continuous concave surfaces | |
CN106128923B (en) | The active display of bowl-type ring cathode construction is inverted in the two-door control of parallel long front | |
CN109473328B (en) | Light-emitting display with multi-discontinuous oblique-belt circular-table cylindrical surface cathode hyperbolic laminated gate control structure | |
CN111696839A (en) | Light-emitting backlight source of arrow-penetrating, bending-stabilizing and gating structure with same-circle drum pair-broken arc-surface cathode |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WW01 | Invention patent application withdrawn after publication |
Application publication date: 20200110 |
|
WW01 | Invention patent application withdrawn after publication |