CN111627784A - Light-emitting backlight source with vertical-separation-different-degree same-concave-surface cathode double-probe curved gate control structure - Google Patents
Light-emitting backlight source with vertical-separation-different-degree same-concave-surface cathode double-probe curved gate control structure Download PDFInfo
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- H—ELECTRICITY
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Abstract
The invention discloses a light-emitting backlight source with a sag-separation-difference homoconcave cathode double-probe curved gate control structure, which comprises a vacuum enclosure and an auxiliary element of a getter, wherein the auxiliary element is positioned in the vacuum enclosure; the front hard transparent glass plate is provided with an anode object film base layer, an anode extension silver bending layer and a thin luminous layer, the anode object film base layer is connected with the anode extension silver bending layer, and the thin luminous layer is manufactured on the anode object film base layer; and a vertical separation different degree same-concave cathode double-probe curved gate control structure is arranged on the rear hard transparent glass plate. The light-emitting backlight has the advantage of excellent uniformity of light-emitting intensity.
Description
Technical Field
The invention belongs to the fields of semiconductor science and technology, photoelectron science and technology, integrated circuit science and technology, microelectronic science and technology, nano science and technology, flat display technology and the field of vacuum science and technology, and relates to the manufacture of a flat light-emitting backlight source, in particular to the manufacture of a flat light-emitting backlight source of a carbon nano tube cathode, in particular to a light-emitting backlight source of a vertical-separation gradient co-concave cathode double-probe curved gate control structure and a manufacture process thereof.
Background
The carbon nanotube cathode is an important component of a planar light-emitting backlight, wherein when the carbon nanotube emits electrons, the emitted electrons are converged together to form a cathode current of the light-emitting backlight. Of course, the amount of electrons provided by the carbon nanotube cathode is very small and large, and the magnitude of the cathode current of the planar light emitting backlight is closely related. With the research progress of the processes of printing preparation, slurry blending and the like of the carbon nanotube cathode, the product research and development process of the planar light-emitting backlight source is directly promoted. However, there are some technical difficulties to be overcome in the light emitting backlight source of the three-pole structure. First, the electron emission efficiency of carbon nanotube cathodes is low. In the carbon nanotube layer, not all the carbon nanotubes emit electrons, but only a small part of the carbon nanotubes can emit electrons normally, but the quantity of the emitted electrons is not too large, so that a large cathode current of the light-emitting backlight source cannot be formed; most of the carbon nanotubes do not emit electrons, which not only occupies the manufacturing area of the carbon nanotube cathode, but also may interfere with a small part of the carbon nanotubes capable of emitting normal electrons. This portion of the carbon nanotubes, i.e., the ineffective cathode, also needs to be addressed. Secondly, the control ability of the gate voltage to the electron emission of the carbon nanotube cathode is poor. On one hand, the electric field intensity formed by the gate voltage on the surface of the carbon nano tube layer is not completely consistent, so that some carbon nano tubes can carry out electron emission and some carbon nano tubes cannot carry out electron emission; on the other hand, the electrical breakdown phenomenon between the gate electrode and the cathode electrode is easily caused by larger gate voltage. The above technical problems are to be further investigated.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to overcome the defects and shortcomings of the light-emitting backlight source and provide the light-emitting backlight source with the same concave cathode double-probe curved gate structure, which has excellent light-emitting intensity uniformity of the light-emitting backlight source and high light-emitting brightness of the light-emitting backlight source, and the manufacturing process thereof.
The technical scheme is as follows: the invention relates to a light-emitting backlight source with a sag-separation difference homoconcave cathode double-probe curved gate control structure, which comprises a vacuum enclosure and an auxiliary element of a getter in the vacuum enclosure, wherein the vacuum enclosure consists of a front hard transparent glass plate, a rear hard transparent glass plate and a glass narrow frame strip; the front hard transparent glass plate is provided with an anode object film base layer, an anode extension silver bending layer and a thin luminous layer, the anode object film base layer is connected with the anode extension silver bending layer, and the thin luminous layer is manufactured on the anode object film base layer; and a vertical separation different degree same-concave cathode double-probe curved gate control structure is arranged on the rear hard transparent glass plate.
Specifically, the substrate of the vertical separation difference homoconcave cathode double-probe curved gate control structure is a rear hard transparent glass plate; forming a gray-black stop layer by printing the insulating slurry layer on the rear hard transparent glass plate; forming a cathode extension silver bending layer on the printed silver paste layer on the gray black stop layer; forming a cathode gradient lower layer by the printed insulating slurry layer on the cathode extension silver bending layer; the lower surface of the cathode differential lower layer is a circular plane and is positioned above the cathode extension silver bent layer, the upper surface of the cathode differential lower layer is a circular plane, the upper surface and the lower surface of the cathode differential lower layer are parallel to each other, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode differential lower layer are coincident to each other, the diameter of the upper surface of the cathode differential lower layer is smaller than that of the lower surface, the outer lower side surface of the cathode differential lower layer is a cylindrical surface, the outer upper side surface of the cathode differential lower layer is a concave curved surface, and the concave direction is towards the central vertical line direction of the lower surface of the cathode differential lower layer; a square hole is formed in the cathode gradient lower layer, and a cathode curved threading layer is formed on a silver paste layer printed in the square hole; the cathode curved wire layer and the cathode extension silver curved layer are communicated with each other; the printed silver paste layer on the upper surface of the cathode gradient lower layer forms a cathode curve threading two layer; the cathode curved threading two layers and the cathode curved threading one layer are communicated with each other; the printed silver paste layer on the outer upper side surface of the cathode gradient lower layer forms a cathode and a concave bottom electrode; the upper edge of the cathode is flush with the upper edge of the outer upper side surface of the cathode differential lower layer, and the lower edge of the cathode is flush with the lower edge of the concave bottom electrode and the lower edge of the outer upper side surface of the cathode differential lower layer; the cathode is communicated with the concave bottom electrode and the cathode curved threading two layers; the printed insulating slurry layer on the upper surface of the cathode differential lower layer forms a cathode differential middle layer; the lower surface of the cathode differential meso-position layer is a circular plane and is positioned on the upper surface of the cathode differential meso-position layer, the central vertical line of the lower surface of the cathode differential meso-position layer and the central vertical line of the upper surface of the cathode differential meso-position layer are mutually superposed, the diameter of the lower surface of the cathode differential meso-position layer is equal to the diameter of the upper surface of the cathode differential meso-position layer, the upper surface of the cathode differential meso-position layer is a circular plane, the upper surface and the lower surface of the cathode differential meso-position layer are mutually parallel, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode differential meso-position layer are mutually superposed, the diameter of the upper surface of the cathode differential meso-position layer is smaller than the diameter of the lower surface, the outer lower side surface of the cathode differential meso-position layer is an upright cylindrical surface, the height of the outer lower side of the, The sinking direction is towards the direction of the central vertical line of the lower surface of the cathode gradient meso-position layer; a square hole is formed in the cathode gradient middle layer, and a silver paste layer printed in the square hole forms a cathode curved threading three layer; the three layers of cathode curved threading and the one layer of cathode curved threading are communicated with each other; the printed silver paste layer on the upper surface of the cathode gradient median layer forms four layers of cathode curved threading; the cathode curved threading four layers and the cathode curved threading three layers are communicated with each other; the printed silver paste layer on the outer upper side surface of the cathode gradient median layer forms a cathode and a concave top electrode; the upper edge of the cathode and the concave top electrode is flush with the upper edge of the outer upper side surface of the cathode gradient median layer, and the lower edge of the cathode and the concave top electrode is flush with the lower edge of the outer upper side surface of the cathode gradient median layer; the four layers of the cathode, the concave top electrode and the cathode curved threading are mutually communicated; the printed insulating slurry layer on the upper surface of the cathode gradient median layer forms a cathode gradient covering layer; the cathode gradient covering layer is positioned on the upper surface of the cathode gradient intermediate layer, the lower surface of the cathode gradient covering layer is a circular plane, and a central vertical line of the lower surface of the cathode gradient covering layer and a central vertical line of the upper surface of the cathode gradient intermediate layer are mutually overlapped; forming a gate electrode double-detection bottom layer by the printed insulating slurry layer on the gray black stop layer; the lower surface of the first layer of the gate double-detection bottom is a plane and is positioned above the gray-black stop layer, a circular hole is formed in the first layer of the gate double-detection bottom, the gray-black stop layer, the cathode extension silver bent layer, the cathode differential lower layer, the cathode curved threading layer, the cathode co-concave bottom electrode, the cathode differential middle layer, the cathode curved threading layer, the cathode co-concave top electrode and the cathode differential covering layer are exposed out of the circular hole, and the inner side surface of the circular hole of the first layer of the gate double-detection bottom is an upright cylindrical surface; the printed silver paste layer on the gate double-probe bottom layer forms a gate head curved lower electrode; the front tail end of the gate pole head curved lower electrode faces the inner side surface of a round hole on the bottom layer of the gate pole double-detection substrate, the rear tail end of the gate pole head curved lower electrode faces the inner side surface of the round hole on the bottom layer of the gate pole double-detection substrate, and the front tail end of the gate pole head curved lower electrode is not flush with the inner side surface of the round hole on the bottom layer of the gate pole double-detection substrate; forming a gate double-detection bottom layer by the gate double-detection bottom layer and the printed insulating slurry layer on the gate head bent lower electrode; the printed silver paste layer on the gate double-detection bottom two layer forms a gate head curved upper electrode; the gate pole head curved upper electrode is in a convex curved surface shape and is positioned on the second layer of the gate pole double-detection bottom, the front tail end of the gate pole head curved upper electrode faces the inner side surface of the circular hole on the first layer of the gate pole double-detection bottom, the rear tail end of the gate pole head curved upper electrode faces the inner side surface of the circular hole on the first layer of the gate pole double-detection bottom, the front tail end of the gate pole head curved upper electrode is flush with the inner side surface of the circular hole on the first layer of the gate pole double-detection bottom, and the rear tail end of; the gate electrode head curve upper electrode and the gate electrode head curve lower electrode are communicated with each other; the insulating slurry layer printed on the gray black stop layer forms a gate double-detection bottom three layer; the printed silver paste layer on the gate double-detection bottom three layers forms a gate extension silver bending layer; the front end of the gate electrode extension silver bending layer is connected with the rear end of the gate electrode head bending lower electrode; the gate electrode extension silver curved layer and the gate electrode head curved lower electrode are communicated with each other; the gate double bottom detecting four layers are formed by the printed insulating slurry layers on the gate head curved upper electrode and the gate head curved lower electrode; the carbon nano tube is manufactured on the cathode co-concave top electrode and the cathode co-concave bottom electrode.
Specifically, the fixed position of the sag-separation-difference and concave cathode double-probe curved gate control structure is a rear hard transparent glass plate.
Specifically, the rear hard transparent glass plate is made of borosilicate glass or soda-lime glass.
The invention also provides a manufacturing process of the light-emitting backlight source with the vertical separation difference and concave cathode double-probe curved gate control structure, which comprises the following steps:
1) manufacturing a rear hard transparent glass plate: and (4) scribing the plane soda-lime glass to form the rear hard transparent glass plate.
2) Preparing a gray black stop layer: and printing insulating slurry on the rear hard transparent glass plate, and forming a gray black stop layer after baking and sintering processes.
3) Manufacturing a cathode extension silver bending layer: and printing silver paste on the gray black stop layer, and baking and sintering to form the cathode extension silver curved layer.
4) And (3) manufacturing a cathode gradient lower layer: and printing insulating slurry on the cathode extension silver curved layer, and baking and sintering to form a cathode differential lower layer.
5) And (3) manufacturing a cathode bent wire layer: and printing silver paste in the square hole of the cathode gradient lower layer, and baking and sintering to form a cathode curve threading layer.
6) And (3) manufacturing a cathode bent threading two layers: silver paste is printed on the upper surface of the cathode gradient lower layer, and a cathode curved threading two layer is formed after baking and sintering processes.
7) Manufacturing a cathode and a concave bottom electrode: and printing silver paste on the upper side surface outside the cathode gradient lower layer, and baking and sintering to form the cathode and concave bottom electrode.
8) Preparing a cathode gradient meso-position layer: and printing insulating slurry on the upper surface of the cathode differential lower layer, and baking and sintering to form the cathode differential middle layer.
9) And (3) manufacturing three layers of cathode bent threading: and silver paste is printed in the square hole of the cathode gradient middle layer, and the cathode curve threading three layers are formed after baking and sintering processes.
10) And (3) manufacturing four layers of cathode bent threads: and printing silver paste on the upper surface of the cathode gradient middle layer, and baking and sintering to form four layers of cathode curved wires.
11) Manufacturing a cathode and a concave top electrode: and printing silver paste on the outer upper side surface of the cathode gradient median layer, and baking and sintering to form the cathode and concave top electrode.
12) And (3) preparing a cathode gradient covering layer: and printing insulating slurry on the upper surface of the cathode gradient median layer, and baking and sintering to form a cathode gradient covering layer.
13) Manufacturing a gate double-probe bottom layer: and printing insulating slurry on the gray black stop layer, and baking and sintering to form a gate double-probe bottom layer.
14) Manufacturing a gate electrode head curve lower electrode: and printing silver paste on the bottom layer of the gate double probe, and baking and sintering to form the gate head curved lower electrode.
15) Manufacturing a gate double-detection bottom two layer: and printing insulating slurry on the first gate double-detection bottom layer and the gate head bent lower electrode, and baking and sintering to form the second gate double-detection bottom layer.
16) Manufacturing a gate head curve upper electrode: and printing silver paste on the gate double-detection bottom two layers, and baking and sintering to form a gate head curved upper electrode.
17) Manufacturing a gate double-probe bottom three layer: and printing insulating slurry on the gray black stop layer, and baking and sintering to form the gate double-detection bottom three layers.
18) Manufacturing a gate electrode extension silver bending layer: and printing silver paste on the gate double-detection three layers, and baking and sintering to form the gate extension silver bending layer.
19) Manufacturing four layers of a gate double-probe substrate: and printing insulating slurry on the gate electrode head curve upper electrode and the gate electrode head curve lower electrode, and baking and sintering to form the gate electrode double bottom detecting four layers.
20) Cleaning a vertical separation difference homoconcave cathode double-probe curved gate control structure: and cleaning the surface of the vertical separation difference homoconcave cathode double-probe curved gate structure to remove impurities and dust.
21) Manufacturing a carbon nanotube layer: and manufacturing the carbon nano tube on the cathode co-concave bottom electrode and the cathode co-concave top electrode to form a carbon nano tube layer.
22) And (3) processing the carbon nanotube layer: and post-treating the carbon nano tube layer to improve the electron emission characteristic.
23) Manufacturing a front hard transparent glass plate: and scribing the plane soda-lime glass to form a front hard transparent glass plate.
24) Preparation of anode substrate film flat layer: and etching the tin-indium oxide film layer covering the surface of the front hard transparent glass plate to form the anode object film substrate flat layer.
25) Manufacturing an anode extension silver bending layer: printing silver paste on the front hard transparent glass plate, and forming an anode extension silver bending layer after baking and sintering processes.
26) Manufacturing a thin light-emitting layer: and printing fluorescent powder on the anode object film base layer, and forming a thin luminous layer after a baking process.
27) Assembling the light-emitting backlight source device: mounting a getter to a non-display area of the front hard transparent glass plate; and then assembling the front hard transparent glass plate, the rear hard transparent glass plate and the glass narrow frame strip together and fixing the glass narrow frame strip by using a clamp.
28) Packaging the light-emitting backlight source device: and carrying out packaging process on the assembled light-emitting backlight source device to form a finished product.
Specifically, in step 25, silver paste is printed on the non-display area of the front hard transparent glass plate, and after the baking process, the maximum baking temperature is: 192 ℃, maximum baking temperature holding time: 7.5 minutes; placing the mixture in a sintering furnace for sintering, wherein the maximum sintering temperature is as follows: 532 ℃, maximum sintering temperature holding time: 9.5 minutes.
Specifically, in step 26, phosphor is printed on the anode substrate film flat layer, and then the anode substrate film flat layer is placed in an oven to be baked, wherein the maximum baking temperature is as follows: 152 ℃, maximum baking temperature hold time: 7.5 minutes.
Specifically, in step 28, the packaging process includes placing the light-emitting backlight device in an oven for baking; sintering in a sintering furnace; exhausting and sealing off on an exhaust table; baking the getter on a baking machine; and finally, additionally installing pins to form a finished product.
Has the advantages that: the invention has the following remarkable progress:
firstly, in the cathode double-probe curved gate structure with the same vertical separation degree and the same concave surface, a cathode same-concave bottom electrode and a cathode same-concave top electrode are manufactured. The cathode and the concave bottom electrode have large electrode surface area, and the cathode and the concave top electrode also have large electrode surface area; therefore, the manufacturing area of the carbon nanotube layer on the top electrode and the bottom electrode is greatly expanded, so that the number of carbon nanotubes participating in electron emission is increased, and the improvement of the brightness of the light-emitting backlight is greatly facilitated.
Secondly, in the cathode double-probe curved gate structure with the same vertical separation difference and concave surface, the carbon nanotube layer is manufactured on the cathode same-concave bottom electrode and the cathode same-concave top electrode. On one hand, the cathode common-concave bottom electrode and the cathode common-concave top electrode both have good conductivity, and can transfer cathode potential to the carbon nano tube, so as to assist the carbon nano tube in electron emission; on the other hand, the cathode common concave bottom electrode and the cathode common concave top electrode are both provided with larger electrode edges, so that the carbon nano tube can be promoted to carry out more electron emission, and the electron emission efficiency of the carbon nano tube is improved. This is helpful to improve the uniformity of the luminous intensity of a luminescent backlight.
Thirdly, a gate pole head curved upper electrode and a gate pole head curved lower electrode are manufactured in the vertical separation different degree co-concave cathode double-probe curved gate control structure. The gate electrode head curve upper electrode and the gate electrode head curve lower electrode act together to form high electric field intensity on the surface of the carbon nano tube cathode, so that the electron emission of the carbon nano tube cathode is controlled, and the substantial function of the gate electrode is embodied. The gate pole head curve upper electrode and the gate pole head curve lower electrode are simple in manufacturing structure and reliable in manufacturing process, and the manufacturing success rate of the light-emitting backlight source is improved.
In addition, no special manufacturing material is adopted in the light-emitting backlight source with the same-sag-difference concave cathode double-probe curved gate control structure, so that the manufacturing cost of the whole light-emitting backlight source is reduced.
Drawings
Fig. 1 shows a longitudinal structure schematic diagram of a vertical separation difference homoconcave cathode dual-probe curved gate structure.
FIG. 2 is a schematic diagram showing the lateral structure of a vertical-separation homoconcave cathode dual-probe curved gate structure.
Fig. 3 is a schematic structural diagram of a light-emitting backlight source with a sag-difference co-concave cathode dual-probe curved gate structure.
In the figure, a rear hard transparent glass plate 1, a gray-black stop layer 2, a cathode extension silver bent layer 3, a cathode differential lower layer 4, a cathode curved wire layer 5, a cathode curved wire layer 6, a cathode same-concave bottom electrode 7, a cathode differential middle layer 8, a cathode curved wire layer 9, a cathode curved wire layer 10, a cathode same-concave top electrode 11, a cathode differential cover layer 12, a gate double-detection bottom layer 13, a gate head curved lower electrode 14, a gate double-detection bottom layer 15, a gate head curved upper electrode 16, a gate double-detection bottom layer 17, a gate extension silver bent layer 18, a gate double-detection bottom layer 19, a carbon nanotube layer 20, a front hard transparent glass plate 21, an anode film substrate flat layer 22, an anode extension silver bent layer 23, a thin light-emitting layer 24, a getter 25 and a glass narrow frame strip 26.
Detailed Description
The present invention will be further described with reference to the drawings and examples, but the present invention is not limited to the examples.
The light-emitting backlight source of the vertical-separation-difference co-concave cathode double-probe curved-gate control structure of the embodiment is shown in fig. 1, fig. 2 and fig. 3, and comprises a vacuum enclosure and an auxiliary element of a getter 25 positioned in the vacuum enclosure, wherein the vacuum enclosure is composed of a front hard transparent glass plate 21, a rear hard transparent glass plate 1 and a glass narrow frame strip 26; the front hard transparent glass plate is provided with an anode object film base layer 22, an anode extension silver bending layer 23 and a thin luminescent layer 24, the anode object film base layer is connected with the anode extension silver bending layer, and the thin luminescent layer is manufactured on the anode object film base layer; and a vertical separation different degree same-concave cathode double-probe curved gate control structure is arranged on the rear hard transparent glass plate.
The vertical separation different-degree co-concave cathode double-probe bent gate control structure comprises a rear hard transparent glass plate 1, a gray-black stop layer 2, a cathode extension silver bent layer 3, a cathode different-degree lower layer 4, a cathode bent threading layer 5, a cathode bent threading layer two 6, a cathode co-concave bottom electrode 7, a cathode different-degree middle layer 8, a cathode bent threading layer three 9, a cathode bent threading layer four 10, a cathode co-concave top electrode 11, a cathode different-degree covering layer 12, a gate double-detection bottom layer 13, a gate head bent lower electrode 14, a gate double-detection bottom layer 15, a gate head bent upper electrode 16, a gate double-detection bottom layer three 17, a gate extension silver bent layer 18, a gate double-detection bottom layer four 19 and a carbon nanotube layer 20.
The substrate of the vertical separation difference homoconcave cathode double-probe curved gate control structure is a rear hard transparent glass plate; forming a gray-black stop layer by printing the insulating slurry layer on the rear hard transparent glass plate; forming a cathode extension silver bending layer on the printed silver paste layer on the gray black stop layer; forming a cathode gradient lower layer by the printed insulating slurry layer on the cathode extension silver bending layer; the lower surface of the cathode differential lower layer is a circular plane and is positioned above the cathode extension silver bent layer, the upper surface of the cathode differential lower layer is a circular plane, the upper surface and the lower surface of the cathode differential lower layer are parallel to each other, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode differential lower layer are coincident to each other, the diameter of the upper surface of the cathode differential lower layer is smaller than that of the lower surface, the outer lower side surface of the cathode differential lower layer is a cylindrical surface, the outer upper side surface of the cathode differential lower layer is a concave curved surface, and the concave direction is towards the central vertical line direction of the lower surface of the cathode differential lower layer; a square hole is formed in the cathode gradient lower layer, and a cathode curved threading layer is formed on a silver paste layer printed in the square hole; the cathode curved wire layer and the cathode extension silver curved layer are communicated with each other; the printed silver paste layer on the upper surface of the cathode gradient lower layer forms a cathode curve threading two layer; the cathode curved threading two layers and the cathode curved threading one layer are communicated with each other; the printed silver paste layer on the outer upper side surface of the cathode gradient lower layer forms a cathode and a concave bottom electrode; the upper edge of the cathode is flush with the upper edge of the outer upper side surface of the cathode differential lower layer, and the lower edge of the cathode is flush with the lower edge of the concave bottom electrode and the lower edge of the outer upper side surface of the cathode differential lower layer; the cathode is communicated with the concave bottom electrode and the cathode curved threading two layers; the printed insulating slurry layer on the upper surface of the cathode differential lower layer forms a cathode differential middle layer; the lower surface of the cathode differential meso-position layer is a circular plane and is positioned on the upper surface of the cathode differential meso-position layer, the central vertical line of the lower surface of the cathode differential meso-position layer and the central vertical line of the upper surface of the cathode differential meso-position layer are mutually superposed, the diameter of the lower surface of the cathode differential meso-position layer is equal to the diameter of the upper surface of the cathode differential meso-position layer, the upper surface of the cathode differential meso-position layer is a circular plane, the upper surface and the lower surface of the cathode differential meso-position layer are mutually parallel, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode differential meso-position layer are mutually superposed, the diameter of the upper surface of the cathode differential meso-position layer is smaller than the diameter of the lower surface, the outer lower side surface of the cathode differential meso-position layer is an upright cylindrical surface, the height of the outer lower side of the, The sinking direction is towards the direction of the central vertical line of the lower surface of the cathode gradient meso-position layer; a square hole is formed in the cathode gradient middle layer, and a silver paste layer printed in the square hole forms a cathode curved threading three layer; the three layers of cathode curved threading and the one layer of cathode curved threading are communicated with each other; the printed silver paste layer on the upper surface of the cathode gradient median layer forms four layers of cathode curved threading; the cathode curved threading four layers and the cathode curved threading three layers are communicated with each other; the printed silver paste layer on the outer upper side surface of the cathode gradient median layer forms a cathode and a concave top electrode; the upper edge of the cathode and the concave top electrode is flush with the upper edge of the outer upper side surface of the cathode gradient median layer, and the lower edge of the cathode and the concave top electrode is flush with the lower edge of the outer upper side surface of the cathode gradient median layer; the four layers of the cathode, the concave top electrode and the cathode curved threading are mutually communicated; the printed insulating slurry layer on the upper surface of the cathode gradient median layer forms a cathode gradient covering layer; the cathode gradient covering layer is positioned on the upper surface of the cathode gradient intermediate layer, the lower surface of the cathode gradient covering layer is a circular plane, and a central vertical line of the lower surface of the cathode gradient covering layer and a central vertical line of the upper surface of the cathode gradient intermediate layer are mutually overlapped; forming a gate electrode double-detection bottom layer by the printed insulating slurry layer on the gray black stop layer; the lower surface of the first layer of the gate double-detection bottom is a plane and is positioned above the gray-black stop layer, a circular hole is formed in the first layer of the gate double-detection bottom, the gray-black stop layer, the cathode extension silver bent layer, the cathode differential lower layer, the cathode curved threading layer, the cathode co-concave bottom electrode, the cathode differential middle layer, the cathode curved threading layer, the cathode co-concave top electrode and the cathode differential covering layer are exposed out of the circular hole, and the inner side surface of the circular hole of the first layer of the gate double-detection bottom is an upright cylindrical surface; the printed silver paste layer on the gate double-probe bottom layer forms a gate head curved lower electrode; the front tail end of the gate pole head curved lower electrode faces the inner side surface of a round hole on the bottom layer of the gate pole double-detection substrate, the rear tail end of the gate pole head curved lower electrode faces the inner side surface of the round hole on the bottom layer of the gate pole double-detection substrate, and the front tail end of the gate pole head curved lower electrode is not flush with the inner side surface of the round hole on the bottom layer of the gate pole double-detection substrate; forming a gate double-detection bottom layer by the gate double-detection bottom layer and the printed insulating slurry layer on the gate head bent lower electrode; the printed silver paste layer on the gate double-detection bottom two layer forms a gate head curved upper electrode; the gate pole head curved upper electrode is in a convex curved surface shape and is positioned on the second layer of the gate pole double-detection bottom, the front tail end of the gate pole head curved upper electrode faces the inner side surface of the circular hole on the first layer of the gate pole double-detection bottom, the rear tail end of the gate pole head curved upper electrode faces the inner side surface of the circular hole on the first layer of the gate pole double-detection bottom, the front tail end of the gate pole head curved upper electrode is flush with the inner side surface of the circular hole on the first layer of the gate pole double-detection bottom, and the rear tail end of; the gate electrode head curve upper electrode and the gate electrode head curve lower electrode are communicated with each other; the insulating slurry layer printed on the gray black stop layer forms a gate double-detection bottom three layer; the printed silver paste layer on the gate double-detection bottom three layers forms a gate extension silver bending layer; the front end of the gate electrode extension silver bending layer is connected with the rear end of the gate electrode head bending lower electrode; the gate electrode extension silver curved layer and the gate electrode head curved lower electrode are communicated with each other; the gate double bottom detecting four layers are formed by the printed insulating slurry layers on the gate head curved upper electrode and the gate head curved lower electrode; the carbon nano tube is manufactured on the cathode co-concave top electrode and the cathode co-concave bottom electrode.
The fixed position of the vertical separation difference and concave cathode double-probe curved gate control structure is a rear hard transparent glass plate.
The rear hard transparent glass plate is made of borosilicate glass or soda-lime glass.
The manufacturing process of the light-emitting backlight source with the vertical separation difference and concave cathode double-probe curved gate control structure comprises the following steps of:
1) manufacturing a rear hard transparent glass plate: and (4) scribing the plane soda-lime glass to form the rear hard transparent glass plate.
2) Preparing a gray black stop layer: and printing insulating slurry on the rear hard transparent glass plate, and forming a gray black stop layer after baking and sintering processes.
3) Manufacturing a cathode extension silver bending layer: and printing silver paste on the gray black stop layer, and baking and sintering to form the cathode extension silver curved layer.
4) And (3) manufacturing a cathode gradient lower layer: and printing insulating slurry on the cathode extension silver curved layer, and baking and sintering to form a cathode differential lower layer.
5) And (3) manufacturing a cathode bent wire layer: and printing silver paste in the square hole of the cathode gradient lower layer, and baking and sintering to form a cathode curve threading layer.
6) And (3) manufacturing a cathode bent threading two layers: silver paste is printed on the upper surface of the cathode gradient lower layer, and a cathode curved threading two layer is formed after baking and sintering processes.
7) Manufacturing a cathode and a concave bottom electrode: and printing silver paste on the upper side surface outside the cathode gradient lower layer, and baking and sintering to form the cathode and concave bottom electrode.
8) Preparing a cathode gradient meso-position layer: and printing insulating slurry on the upper surface of the cathode differential lower layer, and baking and sintering to form the cathode differential middle layer.
9) And (3) manufacturing three layers of cathode bent threading: and silver paste is printed in the square hole of the cathode gradient middle layer, and the cathode curve threading three layers are formed after baking and sintering processes.
10) And (3) manufacturing four layers of cathode bent threads: and printing silver paste on the upper surface of the cathode gradient middle layer, and baking and sintering to form four layers of cathode curved wires.
11) Manufacturing a cathode and a concave top electrode: and printing silver paste on the outer upper side surface of the cathode gradient median layer, and baking and sintering to form the cathode and concave top electrode.
12) And (3) preparing a cathode gradient covering layer: and printing insulating slurry on the upper surface of the cathode gradient median layer, and baking and sintering to form a cathode gradient covering layer.
13) Manufacturing a gate double-probe bottom layer: and printing insulating slurry on the gray black stop layer, and baking and sintering to form a gate double-probe bottom layer.
14) Manufacturing a gate electrode head curve lower electrode: and printing silver paste on the bottom layer of the gate double probe, and baking and sintering to form the gate head curved lower electrode.
15) Manufacturing a gate double-detection bottom two layer: and printing insulating slurry on the first gate double-detection bottom layer and the gate head bent lower electrode, and baking and sintering to form the second gate double-detection bottom layer.
16) Manufacturing a gate head curve upper electrode: and printing silver paste on the gate double-detection bottom two layers, and baking and sintering to form a gate head curved upper electrode.
17) Manufacturing a gate double-probe bottom three layer: and printing insulating slurry on the gray black stop layer, and baking and sintering to form the gate double-detection bottom three layers.
18) Manufacturing a gate electrode extension silver bending layer: and printing silver paste on the gate double-detection three layers, and baking and sintering to form the gate extension silver bending layer.
19) Manufacturing four layers of a gate double-probe substrate: and printing insulating slurry on the gate electrode head curve upper electrode and the gate electrode head curve lower electrode, and baking and sintering to form the gate electrode double bottom detecting four layers.
20) Cleaning a vertical separation difference homoconcave cathode double-probe curved gate control structure: and cleaning the surface of the vertical separation difference homoconcave cathode double-probe curved gate structure to remove impurities and dust.
21) Manufacturing a carbon nanotube layer: and manufacturing the carbon nano tube on the cathode co-concave bottom electrode and the cathode co-concave top electrode to form a carbon nano tube layer.
22) And (3) processing the carbon nanotube layer: and post-treating the carbon nano tube layer to improve the electron emission characteristic.
23) Manufacturing a front hard transparent glass plate: and scribing the plane soda-lime glass to form a front hard transparent glass plate.
24) Preparation of anode substrate film flat layer: and etching the tin-indium oxide film layer covering the surface of the front hard transparent glass plate to form the anode object film substrate flat layer.
25) Manufacturing an anode extension silver bending layer: printing silver paste on the non-display area of the front hard transparent glass plate, baking at 192 ℃ for 7.5 minutes, placing the glass plate in a sintering furnace, and sintering at 532 ℃ for 9.5 minutes to form the anode continuous silver curved layer.
26) Manufacturing a thin light-emitting layer: the phosphor was printed on the anode substrate film flat layer, and then placed in an oven to be baked at 152 ℃ for 7.5 minutes to form a thin light-emitting layer.
27) Assembling the light-emitting backlight source device: mounting a getter to a non-display area of the front hard transparent glass plate; and then assembling the front hard transparent glass plate, the rear hard transparent glass plate and the glass narrow frame strip together and fixing the glass narrow frame strip by using a clamp.
28) Packaging the light-emitting backlight source device: packaging the assembled light-emitting backlight source device, wherein the packaging process comprises the steps of placing the light-emitting backlight source device into an oven for baking; sintering in a sintering furnace; exhausting and sealing off on an exhaust table; baking the getter on a baking machine; and finally, additionally installing pins to form a finished product.
Claims (8)
1. The utility model provides a hang and separate light-emitting backlight of equidimension concave surface negative pole two probe bent gate control structures, its characterized in that: the vacuum sealing body consists of a front hard transparent glass plate, a rear hard transparent glass plate and a glass narrow frame strip; the front hard transparent glass plate is provided with an anode object film base layer, an anode extension silver bending layer and a thin luminous layer, the anode object film base layer is connected with the anode extension silver bending layer, and the thin luminous layer is manufactured on the anode object film base layer; and a vertical separation different degree same-concave cathode double-probe curved gate control structure is arranged on the rear hard transparent glass plate.
2. The light-emitting backlight source with the vertical-separation-difference homoconcave cathode double-probe curved gate control structure as claimed in claim 1, wherein: the substrate of the vertical separation difference homoconcave cathode double-probe curved gate control structure is a rear hard transparent glass plate; forming a gray-black stop layer by printing the insulating slurry layer on the rear hard transparent glass plate; forming a cathode extension silver bending layer on the printed silver paste layer on the gray black stop layer; forming a cathode gradient lower layer by the printed insulating slurry layer on the cathode extension silver bending layer; the lower surface of the cathode differential lower layer is a circular plane and is positioned above the cathode extension silver bent layer, the upper surface of the cathode differential lower layer is a circular plane, the upper surface and the lower surface of the cathode differential lower layer are parallel to each other, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode differential lower layer are coincident to each other, the diameter of the upper surface of the cathode differential lower layer is smaller than that of the lower surface, the outer lower side surface of the cathode differential lower layer is a cylindrical surface, the outer upper side surface of the cathode differential lower layer is a concave curved surface, and the concave direction is towards the central vertical line direction of the lower surface of the cathode differential lower layer; a square hole is formed in the cathode gradient lower layer, and a cathode curved threading layer is formed on a silver paste layer printed in the square hole; the cathode curved wire layer and the cathode extension silver curved layer are communicated with each other; the printed silver paste layer on the upper surface of the cathode gradient lower layer forms a cathode curve threading two layer; the cathode curved threading two layers and the cathode curved threading one layer are communicated with each other; the printed silver paste layer on the outer upper side surface of the cathode gradient lower layer forms a cathode and a concave bottom electrode; the upper edge of the cathode is flush with the upper edge of the outer upper side surface of the cathode differential lower layer, and the lower edge of the cathode is flush with the lower edge of the concave bottom electrode and the lower edge of the outer upper side surface of the cathode differential lower layer; the cathode is communicated with the concave bottom electrode and the cathode curved threading two layers; the printed insulating slurry layer on the upper surface of the cathode differential lower layer forms a cathode differential middle layer; the lower surface of the cathode differential meso-position layer is a circular plane and is positioned on the upper surface of the cathode differential meso-position layer, the central vertical line of the lower surface of the cathode differential meso-position layer and the central vertical line of the upper surface of the cathode differential meso-position layer are mutually superposed, the diameter of the lower surface of the cathode differential meso-position layer is equal to the diameter of the upper surface of the cathode differential meso-position layer, the upper surface of the cathode differential meso-position layer is a circular plane, the upper surface and the lower surface of the cathode differential meso-position layer are mutually parallel, the central vertical line of the upper surface and the central vertical line of the lower surface of the cathode differential meso-position layer are mutually superposed, the diameter of the upper surface of the cathode differential meso-position layer is smaller than the diameter of the lower surface, the outer lower side surface of the cathode differential meso-position layer is an upright cylindrical surface, the height of the outer lower side of the, The sinking direction is towards the direction of the central vertical line of the lower surface of the cathode gradient meso-position layer; a square hole is formed in the cathode gradient middle layer, and a silver paste layer printed in the square hole forms a cathode curved threading three layer; the three layers of cathode curved threading and the one layer of cathode curved threading are communicated with each other; the printed silver paste layer on the upper surface of the cathode gradient median layer forms four layers of cathode curved threading; the cathode curved threading four layers and the cathode curved threading three layers are communicated with each other; the printed silver paste layer on the outer upper side surface of the cathode gradient median layer forms a cathode and a concave top electrode; the upper edge of the cathode and the concave top electrode is flush with the upper edge of the outer upper side surface of the cathode gradient median layer, and the lower edge of the cathode and the concave top electrode is flush with the lower edge of the outer upper side surface of the cathode gradient median layer; the four layers of the cathode, the concave top electrode and the cathode curved threading are mutually communicated; the printed insulating slurry layer on the upper surface of the cathode gradient median layer forms a cathode gradient covering layer; the cathode gradient covering layer is positioned on the upper surface of the cathode gradient intermediate layer, the lower surface of the cathode gradient covering layer is a circular plane, and a central vertical line of the lower surface of the cathode gradient covering layer and a central vertical line of the upper surface of the cathode gradient intermediate layer are mutually overlapped; forming a gate electrode double-detection bottom layer by the printed insulating slurry layer on the gray black stop layer; the lower surface of the first layer of the gate double-detection bottom is a plane and is positioned above the gray-black stop layer, a circular hole is formed in the first layer of the gate double-detection bottom, the gray-black stop layer, the cathode extension silver bent layer, the cathode differential lower layer, the cathode curved threading layer, the cathode co-concave bottom electrode, the cathode differential middle layer, the cathode curved threading layer, the cathode co-concave top electrode and the cathode differential covering layer are exposed out of the circular hole, and the inner side surface of the circular hole of the first layer of the gate double-detection bottom is an upright cylindrical surface; the printed silver paste layer on the gate double-probe bottom layer forms a gate head curved lower electrode; the front tail end of the gate pole head curved lower electrode faces the inner side surface of a round hole on the bottom layer of the gate pole double-detection substrate, the rear tail end of the gate pole head curved lower electrode faces the inner side surface of the round hole on the bottom layer of the gate pole double-detection substrate, and the front tail end of the gate pole head curved lower electrode is not flush with the inner side surface of the round hole on the bottom layer of the gate pole double-detection substrate; forming a gate double-detection bottom layer by the gate double-detection bottom layer and the printed insulating slurry layer on the gate head bent lower electrode; the printed silver paste layer on the gate double-detection bottom two layer forms a gate head curved upper electrode; the gate pole head curved upper electrode is in a convex curved surface shape and is positioned on the second layer of the gate pole double-detection bottom, the front tail end of the gate pole head curved upper electrode faces the inner side surface of the circular hole on the first layer of the gate pole double-detection bottom, the rear tail end of the gate pole head curved upper electrode faces the inner side surface of the circular hole on the first layer of the gate pole double-detection bottom, the front tail end of the gate pole head curved upper electrode is flush with the inner side surface of the circular hole on the first layer of the gate pole double-detection bottom, and the rear tail end of; the gate electrode head curve upper electrode and the gate electrode head curve lower electrode are communicated with each other; the insulating slurry layer printed on the gray black stop layer forms a gate double-detection bottom three layer; the printed silver paste layer on the gate double-detection bottom three layers forms a gate extension silver bending layer; the front end of the gate electrode extension silver bending layer is connected with the rear end of the gate electrode head bending lower electrode; the gate electrode extension silver curved layer and the gate electrode head curved lower electrode are communicated with each other; the gate double bottom detecting four layers are formed by the printed insulating slurry layers on the gate head curved upper electrode and the gate head curved lower electrode; the carbon nano tube is manufactured on the cathode co-concave top electrode and the cathode co-concave bottom electrode.
3. The light-emitting backlight source with the vertical-separation-difference homoconcave cathode double-probe curved gate control structure as claimed in claim 1, wherein: the fixed position of the vertical separation difference and concave cathode double-probe curved gate control structure is a rear hard transparent glass plate.
4. The light-emitting backlight source with the vertical-separation-difference homoconcave cathode double-probe curved gate control structure as claimed in claim 1, wherein: the rear hard transparent glass plate is made of borosilicate glass or soda-lime glass.
5. The manufacturing process of the light-emitting backlight source with the vertical separation difference and concave cathode double-probe curved gate control structure as claimed in claim 1, is characterized by comprising the following steps:
1) manufacturing a rear hard transparent glass plate: scribing the planar soda-lime glass to form a rear hard transparent glass plate;
2) preparing a gray black stop layer: printing insulating slurry on the rear hard transparent glass plate, and forming a gray black stop layer after baking and sintering processes;
3) manufacturing a cathode extension silver bending layer: printing silver paste on the gray black stop layer, and forming a cathode extension silver bent layer after baking and sintering processes;
4) and (3) manufacturing a cathode gradient lower layer: printing insulating slurry on the cathode extension silver curved layer, and forming a cathode differential lower layer after baking and sintering processes;
5) and (3) manufacturing a cathode bent wire layer: printing silver paste in the square hole of the cathode gradient lower layer, and forming a cathode curve threading layer after baking and sintering processes;
6) and (3) manufacturing a cathode bent threading two layers: printing silver paste on the upper surface of the cathode gradient lower layer, and forming a cathode curved threading two layer after baking and sintering processes;
7) manufacturing a cathode and a concave bottom electrode: printing silver paste on the outer upper side surface of the cathode differential lower layer, and forming a cathode same-concave bottom electrode after baking and sintering processes;
8) preparing a cathode gradient meso-position layer: printing insulating slurry on the upper surface of the cathode differential lower layer, and forming a cathode differential middle layer after baking and sintering processes;
9) and (3) manufacturing three layers of cathode bent threading: printing silver paste in a square hole of a cathode gradient middle layer, and forming a cathode curved threading three layer after baking and sintering processes;
10) and (3) manufacturing four layers of cathode bent threads: printing silver paste on the upper surface of the cathode gradient middle layer, and forming four layers of cathode curved threading after baking and sintering processes;
11) manufacturing a cathode and a concave top electrode: printing silver paste on the outer upper side surface of the cathode gradient median layer, and forming a cathode and concave top electrode after baking and sintering processes;
12) and (3) preparing a cathode gradient covering layer: printing insulating slurry on the upper surface of the cathode gradient median layer, and forming a cathode gradient covering layer after baking and sintering processes;
13) manufacturing a gate double-probe bottom layer: printing insulating slurry on the gray black stop layer, and forming a gate double-probe bottom layer after baking and sintering processes;
14) manufacturing a gate electrode head curve lower electrode: printing silver paste on the gate double-probe bottom layer, and forming a gate head curved lower electrode after baking and sintering processes;
15) manufacturing a gate double-detection bottom two layer: printing insulating slurry on the first gate double-detection bottom layer and the gate head bent lower electrode, and baking and sintering to form a second gate double-detection bottom layer;
16) manufacturing a gate head curve upper electrode: printing silver paste on the gate double-detection bottom two layers, and forming a gate head curved upper electrode after baking and sintering processes;
17) manufacturing a gate double-probe bottom three layer: printing insulating slurry on the gray black stop layer, and forming a gate double-detection bottom three layer after baking and sintering processes;
18) manufacturing a gate electrode extension silver bending layer: printing silver paste on the gate double-detection three layers, and forming a gate extension silver bending layer after baking and sintering processes;
19) manufacturing four layers of a gate double-probe substrate: printing insulating slurry on the gate electrode head curve upper electrode and the gate electrode head curve lower electrode, and forming a gate electrode double bottom detecting four layers after baking and sintering processes;
20) cleaning a vertical separation difference homoconcave cathode double-probe curved gate control structure: cleaning the surface of the cathode double-probe curved gate structure with the same concave surface and different vertical separation degree to remove impurities and dust;
21) manufacturing a carbon nanotube layer: manufacturing carbon nanotubes on the cathode co-concave bottom electrode and the cathode co-concave top electrode to form a carbon nanotube layer;
22) and (3) processing the carbon nanotube layer: post-processing the carbon nanotube layer to improve the electron emission characteristic;
23) manufacturing a front hard transparent glass plate: scribing the planar soda-lime glass to form a front hard transparent glass plate;
24) preparation of anode substrate film flat layer: etching the tin-indium oxide film layer covering the surface of the front hard transparent glass plate to form an anode object film base layer;
25) manufacturing an anode extension silver bending layer: printing silver paste on the front hard transparent glass plate, and forming an anode extension silver bending layer after baking and sintering processes;
26) manufacturing a thin light-emitting layer: printing fluorescent powder on the anode object film base layer, and forming a thin luminous layer after a baking process;
27) assembling the light-emitting backlight source device: mounting a getter to a non-display area of the front hard transparent glass plate; then, assembling the front hard transparent glass plate, the rear hard transparent glass plate and the glass narrow frame strip together, and fixing by using a clamp;
28) packaging the light-emitting backlight source device: and carrying out packaging process on the assembled light-emitting backlight source device to form a finished product.
6. The manufacturing process of the light-emitting backlight source with the vertical separation difference and concave cathode double-probe curved gate control structure according to claim 5, characterized in that: step 25, printing silver paste on the non-display area of the front hard transparent glass plate, and after the baking process, performing the following steps of: 192 ℃, maximum baking temperature holding time: 7.5 minutes; placing the mixture in a sintering furnace for sintering, wherein the maximum sintering temperature is as follows: 532 ℃, maximum sintering temperature holding time: 9.5 minutes.
7. The manufacturing process of the light-emitting backlight source with the vertical separation difference and concave cathode double-probe curved gate control structure according to claim 5, characterized in that: step 26, printing fluorescent powder on the anode object film substrate flat layer, and then placing the anode object film substrate flat layer in an oven for baking, wherein the maximum baking temperature is as follows: 152 ℃, maximum baking temperature hold time: 7.5 minutes.
8. The manufacturing process of the light-emitting backlight source with the vertical separation difference and concave cathode double-probe curved gate control structure according to claim 5, characterized in that: in step 28, the packaging process includes baking the light-emitting backlight device in an oven; sintering in a sintering furnace; exhausting and sealing off on an exhaust table; baking the getter on a baking machine; and finally, additionally installing pins to form a finished product.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004207066A (en) * | 2002-12-25 | 2004-07-22 | Ci Techno:Kk | Light emitting device and its manufacturing method |
| CN106847656A (en) * | 2017-01-03 | 2017-06-13 | 金陵科技学院 | Inside connect the active display of the isolated equivalent concave surface cathode construction of lower biconvex silver gate |
| CN109494143A (en) * | 2018-11-21 | 2019-03-19 | 金陵科技学院 | Active display of the double arcs of streamline with the oblique curved crab claw branch line gating structure of side surface body cathode |
-
2020
- 2020-05-22 CN CN202010442366.XA patent/CN111627784A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004207066A (en) * | 2002-12-25 | 2004-07-22 | Ci Techno:Kk | Light emitting device and its manufacturing method |
| CN106847656A (en) * | 2017-01-03 | 2017-06-13 | 金陵科技学院 | Inside connect the active display of the isolated equivalent concave surface cathode construction of lower biconvex silver gate |
| CN109494143A (en) * | 2018-11-21 | 2019-03-19 | 金陵科技学院 | Active display of the double arcs of streamline with the oblique curved crab claw branch line gating structure of side surface body cathode |
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