CN111694094A

CN111694094A - WPCW pipe structure

Info

Publication number: CN111694094A
Application number: CN202010549860.6A
Authority: CN
Inventors: 王亚非
Original assignee: Individual
Current assignee: Individual
Priority date: 2020-06-16
Filing date: 2020-06-16
Publication date: 2020-09-22

Abstract

The invention discloses a WPCW tube structure, which comprises a substrate, wherein the substrate is provided with a compound dopant. The invention combines the compound doping through the substrate, has simpler structure, does not have parasitic capacitance or parasitic resistance, does not have electromigration effect, realizes low power consumption, is not easy to be interfered by electromagnetism, has higher bandwidth and simple production process.

Description

WPCW pipe structure

Technical Field

The invention relates to the technical field of digital ICs (integrated circuits), in particular to a WPCW (WPCW) tube structure.

Background

An IC is a generic name of a semiconductor device product, and the IC can be classified into: digital ICs, analog ICs, microwave ICs, and other ICs. The digital IC is an IC that transmits, processes, and processes digital signals, is an IC variety that is most widely used and rapidly developed in recent years, and can be classified into general-purpose digital ICs and special-purpose digital ICs. General purpose IC: the circuit is a standard circuit with a plurality of users and a wide application field, such as a memory (DRAM), a Microprocessor (MPU), a Microcontroller (MCU) and the like, and reflects the current situation and level of a digital IC. Application specific ic (asic): refers to a circuit designed for a particular user, a specific or special purpose.

The digital IC unit commonly used in the market at present is an MOS tube, a basic circuit structure is formed by the combination of basic units, and then the basic circuit structure is combined into a chip circuit with a target function, and the problems of parasitic effect, heating, electromigration effect and easy electromagnetic interference exist in the prior art at present.

An effective solution to the problems in the related art has not been proposed yet.

Disclosure of Invention

Aiming at the problems in the related art, the invention provides a WPCW tube structure, which is doped by combining a substrate with a compound, has a simpler structure, does not have parasitic capacitance or parasitic resistance, does not have an electromigration effect, realizes low power consumption, is not easy to be interfered by electromagnetism, has higher bandwidth and simple production process, and overcomes the technical problems in the prior related art.

The technical scheme of the invention is realized as follows:

a WPCW tube structure includes a substrate having a compound dopant disposed thereon.

Further, the compound doping is photoluminescence doping or photochromic doping.

Further, the substrate is silicon dioxide, a semiconductor or a polymer.

The invention has the beneficial effects that:

the invention combines the compound doping through the substrate, has simpler structure, does not have parasitic capacitance or parasitic resistance, does not have electromigration effect, realizes low power consumption, is not easy to be interfered by electromagnetism, has higher bandwidth and simple production process.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.

Figure 1 is a schematic structural diagram of a WPCW tubular structure according to an embodiment of the invention;

figure 2 is a schematic connection diagram of a WPCW tubular structure according to an embodiment of the invention;

fig. 3 is a first schematic view of a WPCW pipe structure according to an embodiment of the present invention;

fig. 4 is a schematic view of a WPCW pipe structure according to an embodiment of the present invention;

fig. 5 is a schematic view of a WPCW pipe structure according to an embodiment of the present invention;

figure 6 is a schematic diagram of an application of a WPCW tubular structure according to an embodiment of the invention;

figure 7 is a schematic plan view of an application of a WPCW tubular structure according to an embodiment of the invention;

figure 8 is a schematic circuit diagram of an application circuit of a WPCW pipe structure according to an embodiment of the present invention.

In the figure:

1. a substrate; 2. the compound is doped.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments that can be derived by one of ordinary skill in the art from the embodiments given herein are intended to be within the scope of the present invention.

According to an embodiment of the present invention, a WPCW tubular structure is provided.

As shown in fig. 1-2, a WPCW tube structure according to an embodiment of the present invention includes a substrate 1, and a compound dopant 2 is provided on the substrate 1.

By means of the technical scheme, the substrate 1 is combined with the compound doping 2, light is used as a signal, a parasitic effect and an electromigration effect when an electric signal is not used are avoided, a part which directly influences is a basic unit doped with the photochromic compound, the structure is simpler, parasitic capacitance or parasitic resistance is avoided, the electromigration effect is avoided, the power consumption is low, the electromagnetic interference is not prone to occurring, in addition, the bandwidth is higher, and the production process is simple.

Wherein the compound doping 2 is photoluminescence doping or photochromic doping.

Wherein the substrate 1 is silicon dioxide, a semiconductor or a polymer.

In addition, specifically, as shown in fig. 3, the compound doped 2 may be a color-changing compound doped;

as shown in fig. 4, the compound dopant 2 may be a luminescent compound dopant;

as shown in fig. 5, the compound doping 2 may be a mixed compound doping.

In addition, by using WPCW (wave guide Photosensitive compound-waveguide structure), a structure similar to MOS (metal-oxide-semiconductor field effect transistor) is made on a chip by using silicon dioxide, semiconductor material or polymer as a substrate and using photochromic compound in a traditional chip process, and the structure can be used for forming digital units such as AND gates, OR gates, NOT gates, encoders, decoders, and the like.

Specifically, as shown in fig. 6 to 8, the two-four decoder composed of basic units, the two-four decoder using ultraviolet light and red visible light as signals.

In summary, according to the above technical solution of the present invention, the substrate 1 is combined with the compound doping 2, light is used as a signal, a parasitic effect and an electromigration effect when an electrical signal is not used are not used, and a component directly influencing the light is a basic unit doped with the photochromic compound, so that the structure is simpler, and the photochromic compound has no parasitic capacitance or parasitic resistance and no electromigration effect, and is low in power consumption, less susceptible to electromagnetic interference, higher in bandwidth and simple in production process.

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.

Claims

1. A WPCW tube structure, characterized by comprising a substrate (1), the substrate (1) being provided with a compound dopant (2).

2. A WPCW tubular structure as claimed in claim 1, characterized in that the compound doping (2) is a photoluminescent doping or a photochromic doping.

3. A WPCW tube structure as claimed in claim 1, characterized in that the substrate (1) is silicon dioxide, a semiconductor or a polymer.