CN111694093B - Silicon-based photoelectron integrated chip with local light amplification and pumping coupling method - Google Patents
Silicon-based photoelectron integrated chip with local light amplification and pumping coupling method Download PDFInfo
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- CN111694093B CN111694093B CN202010482132.8A CN202010482132A CN111694093B CN 111694093 B CN111694093 B CN 111694093B CN 202010482132 A CN202010482132 A CN 202010482132A CN 111694093 B CN111694093 B CN 111694093B
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
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Abstract
The embodiment of the invention provides a silicon-based optoelectronic integrated chip with local light amplification and a pumping coupling method, wherein the chip comprises an optical signal processing device, a transmission waveguide and a gain layer; the gain layer is formed by leading out at least one amplification waveguide on the optical signal processing device, etching a groove-shaped structure on the at least one amplification waveguide and filling a gain material in the groove-shaped structure; and/or etching a groove-shaped structure on the transmission waveguide, wherein the groove-shaped structure is formed by filling the gain material. The embodiment of the invention carries out local processing on the part needing light amplification in the whole silicon-based optoelectronic integrated chip, fills the gain material, realizes local high-performance light amplification, can effectively compensate the transmission loss of the whole system on a chip, and introduces reliable on-chip amplification for the silicon-based optoelectronic integrated chip.
Description
Technical Field
The invention belongs to the technical field of optical communication, and particularly relates to a silicon-based optoelectronic integrated chip for local optical amplification and a pump coupling method.
Background
In recent years, silicon-based optoelectronic technology using silicon as a main research material has been rapidly developed, and has played a significant role in important fields such as optical communication and data centers. Similar to the speed of doubling the scale of integrated circuits in 2 years according to moore's law, the scale of optical devices in silicon-based optoelectronics is also increasing remarkably, and the requirements of high information transmission rate and large information transmission capacity in optical communication and optical networks can be met.
However, as more and more silicon-based optoelectronic devices are integrated in such circuits, the attenuation of optical signals in each device is inevitable, for example, silicon-based modulators (2-3 dB), photodetectors (1-3 dB) and other passive devices (0.5dB) based on silicon-based optoelectronic integrated chips, and as the integration level is increased, the loss on the whole chip easily exceeds 20dB, which seriously affects the transmission performance of the whole system. If thousands of silicon-based optoelectronic devices are integrated on a chip like an integrated circuit in the future, the research on the compensation of signal light attenuation becomes more important, and the method is one of the key points of the current silicon-based optoelectronic technology research. Therefore, the on-chip integrated optical waveguide amplifier is an indispensable device in a large-scale silicon-based optoelectronic system and plays an important role in the aspects of on-chip amplification and loss compensation of optical signals.
Currently, silicon-based optical waveguide amplification is mainly realized by attaching a semiconductor optical amplifier to a substrate by using a bonding technology based on a conventional Semiconductor Optical Amplifier (SOA).
Although the iii-v semiconductor material is a direct band gap and is a good light source material, the iii-v semiconductor and silicon have a large lattice mismatch, and it is difficult to directly grow a high-quality iii-v semiconductor material on a silicon substrate, and even though the iii-v semiconductor is not compatible with the silicon manufacturing technology; on the other hand, semiconductor materials have short carrier lifetimes and are not suitable for high-speed modulation applications.
Disclosure of Invention
To overcome the above-mentioned existing problems or at least partially solve the above-mentioned problems, embodiments of the present invention provide a silicon-based optoelectronic integrated chip with local optical amplification and a pump coupling method.
According to a first aspect of the embodiments of the present invention, there is provided a silicon-based optoelectronic integrated chip with local optical amplification, including an optical signal processing device and a transmission waveguide, and further including a gain layer;
the gain layer is formed by filling a gain material in a groove-shaped structure, and the groove-shaped structure is etched on at least one amplification waveguide led out from the optical signal processing device;
and/or the presence of a gas in the gas,
the gain layer is formed by filling a gain material in a groove-like structure, and the groove-like structure is etched on the transmission waveguide.
On the basis of the above technical solutions, the embodiments of the present invention may be further improved as follows.
Optionally, the side wall of the groove-shaped structure is smooth, and the groove-shaped structure is formed by etching on the amplification waveguide or the transmission waveguide through an ultraviolet lithography technology.
Optionally, the amplification waveguide or the transmission waveguide below the groove-shaped structure region is of a tapered waveguide structure.
Optionally, the depth and the width of the groove-like structure can be adjusted according to the optical field distribution entering the optical signal processing device or the optical field distribution entering the transmission waveguide;
the filling of the gain material in the groove-like structure comprises:
and filling the gain material in the groove-shaped structure by using a magnetron sputtering or laser deposition method.
Optionally, the gain material is an erbium-doped material.
Optionally, a preset distance is kept between the groove-shaped structure and the amplification waveguide below to form an isolation layer and/or a preset distance is kept between the groove-shaped structure and the transmission waveguide below to form an isolation layer.
According to a second aspect of the embodiments of the present invention, there is provided a pump coupling method for a silicon-based optoelectronic integrated chip, including:
inputting pump light into the gain layer, and activating the optical amplification function of the gain layer by adopting the pump light;
and inputting pump light into the gain layer by adopting a space pumping mode or a waveguide coupling mode or a pumping bonding mode.
Optionally, the inputting the pump light into the gain layer by using a spatial pumping method includes:
pump light is emitted directly from the space above the gain layer and coupled into the gain layer.
Optionally, the inputting the pump light into the gain layer by using a waveguide coupling method includes:
and a pumping waveguide is led out from the side surface of the gain layer, and pumping light is input into the gain layer from the side surface through the pumping waveguide.
Optionally, the inputting of the pump light into the gain layer by using a pump bonding method includes:
depositing silicon dioxide and a silicon nitride film as a bonding dielectric layer above the gain layer by adopting PECVD;
integrating a semiconductor pumping light source above the gain layer in a bonding mode;
and emitting a pumping light source by a semiconductor pumping light source to be input into the gain layer.
The embodiment of the invention provides a silicon-based optoelectronic integrated chip with local light amplification and a pumping coupling method, which are used for locally processing a part needing light amplification in the whole silicon-based optoelectronic integrated chip, etching a groove-shaped structure on a waveguide needing light amplification, and filling a gain material in the groove-shaped structure, thereby realizing local high-performance light amplification, effectively compensating the transmission loss of a whole system on a chip and introducing reliable on-chip amplification for the silicon-based optoelectronic integrated chip.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a schematic overall structure diagram of a silicon-based optoelectronic integrated chip with local light amplification according to an embodiment of the present invention;
fig. 2(a) is a schematic structural diagram of an optical waveguide amplifier according to an embodiment of the present invention;
FIG. 2(b) is a cross-sectional view of an optical waveguide amplifier provided by an embodiment of the present invention;
FIG. 3(a) is a schematic diagram of a spatial pumping scheme;
FIG. 3(b) is a schematic diagram of a waveguide-coupled pumping scheme;
FIG. 3(c) is a schematic diagram of a pump bonding scheme;
FIG. 4(a) is a schematic diagram of a waveguide structure of a conventional silicon-based optoelectronic integrated chip;
FIG. 4(b) is a schematic diagram of etching a trench structure in a waveguide layer;
FIG. 4(c) is a schematic view of the deposition of gain material in a trench-like structure;
FIG. 5 is a schematic diagram of a partial enlarged finite element modeling analysis according to an embodiment of the present invention;
fig. 6 is a diagram illustrating a simulation result of local amplification gain characteristics according to an embodiment of the present invention.
In the drawings, the names of the components represented by the respective reference numerals are as follows:
1. optical signal processing device, 2, transmission waveguide, 3, groove structure, 4, gain layer, 5, Si substrate, 6, SiO2Protective layer, 7, waveguide layer, 8, pump laser, 9, electrode, 10, photodetector, 11, CMOS device, 12, light source, 13, space pump source, 14, pump waveguide, 15, bonding layer, 16 and mask plate.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
The embodiment of the invention provides a silicon-based optoelectronic integrated chip for local light amplification, which mainly comprises an optical signal processing device 1, a transmission waveguide 2 and a gain layer 4;
the gain layer 4 is formed by filling a gain material in the groove-shaped structure 3, and the groove-shaped structure 3 is etched on at least one amplification waveguide led out from the optical signal processing device 1;
and/or the presence of a gas in the gas,
the gain layer 4 is formed by filling a gain material in the groove-like structure 3, and the groove-like structure 3 is etched on the transmission waveguide 2.
It can be understood that, referring to fig. 1, the silicon-based optoelectronic integrated chip mainly includes two optical signal processing devices 1 (hereinafter referred to as a first optical signal processing device and a second optical signal processing device) and a transmission waveguide 2, wherein, the output of the laser light generated by the laser (referred to as a light source 12) is transmitted through the transmission waveguide 2, enters the first optical signal processing device for processing, is coupled into the waveguide through a beam combiner for further transmission, enters the second optical signal processing device again for processing, finally enters the optical detector 10 and is subsequently integrated with the CMOS device 11.
Because the optical signal is attenuated continuously in the process of processing and waveguide transmission, the optical amplification can be carried out by locally depositing the gain material aiming at different transmission areas, including the amplification compensation of the waveguide led out from the optical signal processing device 1, the amplification compensation of the whole transmission waveguide 2 and the like. The local amplification structure can be better integrated with a high-quality signal processing module (modulation and detection) on a large-size silicon substrate compatible with a CMOS (complementary metal oxide semiconductor) process. Integrated systems based on such local amplification techniques will be useful in many applications, including short-range optical interconnects, systems on chip, and for medical and sensing devices, among others.
Based on this, the embodiment of the present invention may add the gain layer 4 on the optical signal processing device 1 or the transmission waveguide 2. When the gain layer 4 is added to the optical signal processing device 1, it is necessary to lead out one waveguide (hereinafter referred to as an amplification waveguide) on the optical signal processing device 1, etch the groove structure 3 on the lead-out amplification waveguide, and fill the groove structure 3 with a gain material to form the gain layer 4. Or the groove-shaped structure 3 is directly etched on the transmission waveguide 2 of the chip and the gain layer 4 is formed by filling the gain material in the groove-shaped structure 3. Wherein, the side wall of the groove-shaped structure 3 is smooth, and the groove-shaped structure 3 is formed by etching on the amplifying waveguide or the transmission waveguide 2 through an ultraviolet photoetching technology.
The embodiment of the invention carries out local treatment on the part of the whole silicon-based optoelectronic integrated chip which needs light amplification, etches and fills a groove above a waveguide, then selectively deposits a gain material in the groove to form a gain layer 4, the gain layer 4 and a lower waveguide (can be an amplification waveguide or a transmission waveguide 2) form a mixed waveguide structure, and the efficient coupling between an upper layer and a lower layer is completed by designing a proper cone-shaped coupling structure in the waveguide, and finally, an optical field redistributes in transmission and continuously and locally couples and amplifies, thereby compensating the transmission loss in the on-chip waveguide.
As an alternative embodiment, the amplifying or transmission waveguide 2 below the region of the slot-like structure 3 is a tapered waveguide structure.
It is understood that, in order to make the waveguide layer 7 (the amplifying waveguide or the transmission waveguide 2 is referred to as the waveguide layer 7) be an optical transmission layer in the chip, the waveguide in the transmission direction in the gain region adopts a tapered structure in order to make efficient coupling between the waveguide layer 7 and the gain layer 4, so that most of the optical field in the waveguide in the region can be coupled into the gain layer 4 above for amplification. By optimizing the size of the graded structure, the coupling efficiency between different layers can be improved.
As an alternative embodiment, the depth and width of the groove-like structure 3 can be adjusted according to the optical field distribution entering the optical signal processing device 1 or the optical field distribution entering the transmission waveguide 2;
the filling of the gain material in the groove-like structure 3 includes:
and filling the gain material in the groove-shaped structure 3 by utilizing mature microelectronic process schemes such as magnetron sputtering or laser deposition.
It can be understood that the waveguide layer 7 and the gain layer 4 together form a hybrid waveguide, and in view of the need to improve optical field redistribution between the waveguide layer 7 and the gain layer 4 in order to further improve the transmission amplification effect in the hybrid waveguide, in the embodiment of the present invention, the above-mentioned purpose is achieved by optimizing the size of the slot-shaped structure 3. The waveguide layer 7 below the groove-like structure 3 is designed in the transmission direction as a tapered structure, coupling back from the waveguide layer 7 into the gain layer 4 of larger cross-section, achieving optical amplification. The critical parameters of the waveguide structure design, such as the thickness and width of the gain material filled in the trench-like structure 3 and the width of the taper structure of the waveguide layer 7, are optimized to improve the confinement factor of the transmission signal in the gain layer 4 and to form SiO between the waveguide layer 7 and the gain layer 42The isolation layer is adjusted. The embodiment of the invention utilizes software simulation to calculate the optical field distribution of transmission signal light (1535nm) in the waveguide, and calculates that the overlapping factor of the signal light in a gain region exceeds 80 percent.
And a preset distance is kept between the groove-shaped structure 3 and the amplification waveguide below to form an isolation layer and/or a preset distance is kept between the groove-shaped structure 3 and the transmission waveguide 2 below to form an isolation layer.
It is understood that the isolation layer is the SiO layer mentioned above2A barrier layer, which may also be referred to as an oxidation-regulating layer, the oxidation-regulating layer beingThe oxide layer for controlling the optical field distribution is formed by etching the trench 3 at a depth that does not penetrate the waveguide and is spaced from the waveguide layer 7 to form SiO between the waveguide layer 7 and the gain layer 42An isolation layer. The SiO2The isolation layer can reduce the light guiding effect of the light field in the high-refractive-index material, and adjust the limiting effect of the waveguide region on the light field of the gain layer 4 according to requirements.
As an alternative embodiment, the gain material is a bait-doped material, and specifically, an yttrium or ytterbium doped erbium silicate material may be used.
It will be appreciated that for the choice of gain material, it must be sufficient to achieve a large net gain optical amplification on a small size waveguide structure: higher erbium ion doping concentration, less transmission loss and lower erbium ion cooperative up-conversion coefficient. Thus, embodiments of the present invention may employ an erbium silicate material system, where the erbium silicate compounds provide a greater concentration of optically active erbium than erbium doped silicon-based materials, according to stoichiometric principles. In addition, by dispersing erbium ions by doping erbium silicate compound with yttrium (Y) or ytterbium (Yb), the erbium ions can be uniformly dispersed while maintaining the crystal structure, which plays an important role in reducing the conversion factor in cooperation with erbium ions, and can form an alternating structure with the silicon nitride film to reduce the transmission loss of the film.
The device formed by performing local amplification on the silicon-based optoelectronic integrated chip can also be understood as an optical waveguide amplifier, which can be seen in fig. 2(a) and 2(b), and can be understood as the optical waveguide amplifier sequentially including, from bottom to top, the Si substrate 5 and the SiO substrate 52 A protection layer 6, a waveguide layer 7 and a gain layer 4, wherein the gain layer 4 is formed by etching a trench structure 3 on the waveguide and filling the trench structure 3 with a gain material.
The embodiment of the invention also provides a pumping coupling method of the silicon-based optoelectronic integrated chip with local light amplification, which comprises the following steps:
pumping light is input into the gain layer 4 in a space pumping mode, and the optical amplification function of the gain layer 4 is activated by the pumping light; or;
inputting pump light into the gain layer 4 in a waveguide coupling mode, and activating the light amplification function of the gain layer 4 by using the pump light; or;
and inputting pump light into the gain layer 4 in a pump bonding mode, and activating the optical amplification function of the gain layer 4 by using the pump light.
It is understood that, in order to invert the ion number of erbium ions in the gain layer 4, pump and activate the gain layer 4, and to perform the amplification function of the optical signal, it is necessary to activate the gain layer 4 by local optical pumping.
The embodiment of the present invention provides three ideas for optical pump coupling of the gain layer 4, as shown in fig. 3. The first is a spatial pumping scheme, as shown in fig. 3(a), in which a spatial pump source 13 directly emits pump light from the space above the gain layer 4 and couples the pump light into the gain layer 4, and the scheme has a simple structure and is flexible to set.
The second is a waveguide coupling scheme, as shown in fig. 3(b), a pump waveguide 14 is led out from the side surface of the gain layer 4, pump light is input into the chip from the end surface of the chip, and then the pump light is input into the gain layer 4 from the side surface through the pump waveguide 14. The direct coupling mode is used for a single-mode waveguide device, the section size and the refractive index of a waveguide for pumping can be controlled by an optimized structure, the size of a mode field is consistent with that of an end face optical fiber, and the coupling efficiency is improved. The mode has compact structure and large alignment misalignment tolerance.
The third is a pump bonding scheme, as shown in fig. 3(c), a pump laser 8 is "attached" above the gain layer 4 by bonding, a silicon oxide and silicon nitride film is deposited as a bonding layer 15 on the deposited gain layer 4 by PECVD (Plasma Enhanced Chemical Vapor Deposition), and surface activation is performed by RIE (reactive ion etching), and then the pump laser 8 is integrated above the gain layer 4 by bonding, two electrodes 9 are used to supply power to the pump laser 8, and two electrodes 9 are fixed on the pump laser 8. The mode integrates the pump on the chip better, so that the electric pump amplification is indirectly realized, and the integration level of the chip is improved.
The preparation process of the waveguide amplifier mainly comprises the following steps: thermally oxidizing a thick silicon dioxide film (SiO) on a silicon substrate2Protective layer 6) for reducing leakage light to the substrate and protecting the entire chip. Fig. 4(a) shows a waveguide structure of a conventional silicon-based optoelectronic integrated chip. Then SiO over the waveguide for the portion that needs amplification2The protective layer 6 is etched by an etching technique to form the groove-shaped structure 3 with a certain depth and a certain width, and fig. 4(b) is a schematic diagram of etching the groove-shaped structure 3. Finally, the groove-shaped structure 3 is filled with the gain layer 4 with a certain thickness by using methods such as magnetron sputtering or laser deposition, and fig. 4(c) is a schematic diagram of depositing the gain layer 4 in the groove-shaped structure 3.
Due to the local deposition of the gain layer 4, selective deposition is required in partial areas on the chip. The embodiment of the invention mainly adopts the following centralized mode: first, covering the areas where the gain layer 4 is not needed with a thin glass plate on top of which two thick glass plates are placed to ensure mechanical stability, and second, covering the chip with a thin metal mask can be used instead of a glass plate and made area-selective with it. Both the first and second ways are an effective and simple way of physically achieving area-selective deposition, wherein thin glass plates or thick glass plates or thin metal masks can be understood as masked plates 16.
Third, selective deposition can be achieved by first depositing on the entire chip and then removing the portions other than the amplification regions, wherein chemical methods are used to selectively etch away the erbium doped gain film outside the regions. The problem with this chemical approach is that residual photoresist in the trenches in the chip can affect the performance of the device, and thus physical methods are more used to selectively deposit the gain material.
The above embodiments improve the structure of the local optical waveguide amplifier, and here, the gain characteristics of the local optical waveguide amplifier are simulated and analyzed, and can be based on the erbium ion energy level model. The three-dimensional waveguide structure is constructed as shown in fig. 5, considering three directions: the erbium ions are considered to be uniformly distributed along the signal light transmission direction (z direction), along the pump input direction (x direction), and in the y direction, so that the entire device model can be two-dimensionally simplified. Further, a two-dimensional rate equation (total number of erbium ions at each energy level should be a function of x and z, uniform distribution along the y-direction) and a two-dimensional transfer equation (pump power input along the x-direction, signal power transfer along the z-direction) can be established. The solution idea of the amplification characteristic is mainly three-dimensional finite element analysis, a first finite element block (x1, y1, z1) is calculated according to boundary input conditions, an x-direction adjacent finite element block (x2, y1, z1) and a z-direction adjacent finite element block (x1, y1, z2) are obtained according to a two-dimensional rate equation and a two-dimensional transmission equation, the process is repeated until signals, pumping power and energy level erbium concentration of all units are obtained, and finally, iteration is continuously carried out until the boundary units meet the boundary conditions. In each finite element block, according to the erbium-ytterbium energy level structure model, the rate equation is as follows:
wherein N isiRepresents the average erbium ion concentration at each erbium energy level,
denotes the average ytterbium ion concentration, P, at each ytterbium levelp/sRespectively representing the pump/signal optical power, AijDescription of spontaneous and non-radiative relaxation probabilities, C2And C3Is a first and second order cooperative up-conversion coefficient, C14Is Er3+Cross relaxation coefficient, KtrIs Yb3+To Er3+Energy transfer coefficient. W12/W21Indicating stimulated emission and absorption transition rates, R, for signal light13/R31Indicating the stimulated emission and absorption transition rates for the pump light. According to the energy level equation, the transmission equation of the transmission signal can be obtained as follows:
whereinN1And N2Respectively represent the ground state energy level of erbium ions (4I15/2) And excited state energy level (4I13/2) Average particle number of (a). Sigma12And σ21Respectively, the absorption and emission cross sections of the erbium ions to the signal light. Alpha is alphasIs the propagation loss of signal light per unit length in the waveguide. The final gain formula is calculated as follows:
according to the premise assumption, the ion concentration and the power density in all the cell blocks in the same row of z coordinates of the same xy plane are kept unchanged, and after three-dimensional iteration, signals, pumping and amplification parameters of the whole three-dimensional plane can be fitted. The simulated prediction of the amplification characteristics is shown in fig. 6.
The silicon-based optoelectronic integrated chip with local light amplification and the pumping coupling method provided by the embodiment of the invention have the advantages that the part of the whole silicon-based optoelectronic integrated chip needing light amplification is locally processed, and the gain material is filled, so that the local high-performance light amplification is realized, the transmission loss of the whole system on a chip can be effectively compensated, and the reliable on-chip amplification is introduced for the silicon-based optoelectronic integrated chip.
The waveguide adopts a gradually-changing conical structure in the transmission direction in a gain interval, so that most of the optical field in the waveguide in the region can be coupled to the upper part; an oxidation isolation layer is additionally arranged between the waveguide layer and the gain layer, so that the light guide effect of a light field in a high-refractive-index material is reduced, and the limiting effect of a waveguide area on the light field of the gain layer is adjusted. The depth and the width of the groove-shaped structure are determined according to the optical field distribution, and the transmission amplification effect in the hybrid waveguide is improved.
By adding yttrium (Y) or ytterbium (Yb) into the erbium silicate material to disperse erbium ions in the erbium silicate material, the erbium ions can be uniformly dispersed, and the crystal structure is still kept unchanged, which plays an important role in reducing the conversion coefficient in cooperation of the erbium ions. And may form an alternating structure with the silicon nitride film to reduce transmission loss of the film. And providing various optical pumping coupling modes of the gain layer to activate the gain layer.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A silicon-based optoelectronic integrated chip with local light amplification comprises an optical signal processing device and a transmission waveguide, and is characterized by further comprising a gain layer;
the gain layer is formed by filling a gain material in a groove-shaped structure, and the groove-shaped structure is etched on at least one amplification waveguide led out from the optical signal processing device;
and/or the presence of a gas in the gas,
the gain layer is formed by filling a gain material in a groove-like structure, and the groove-like structure is etched on the transmission waveguide.
2. The silicon-based optoelectronic integrated chip according to claim 1, wherein the trench structure has smooth sidewalls, and is etched on the amplification waveguide or the transmission waveguide by using an ultraviolet lithography technique.
3. The silicon-based optoelectronic integrated chip according to claim 1 or 2, wherein the amplifying waveguide or the transmission waveguide under the groove-shaped structure region is a tapered waveguide structure.
4. The silicon-based optoelectronic integrated chip of claim 3,
the depth and the width of the groove-shaped structure are adjusted according to the optical field distribution entering the optical signal processing device or the optical field distribution entering the transmission waveguide;
the filling of the gain material in the groove-like structure comprises:
and filling the gain material in the groove-shaped structure by using a magnetron sputtering or laser deposition method.
5. The silicon-based optoelectronic integrated chip of claim 1 or 4, wherein the gain material is an erbium-doped material.
6. The silicon-based optoelectronic integrated chip according to claim 1, wherein a preset distance is kept between the groove-shaped structure and the amplifying waveguide below to form an isolation layer and/or a preset distance is kept between the groove-shaped structure and the transmitting waveguide below to form an isolation layer.
7. The pump coupling method of the silicon-based optoelectronic integrated chip according to claim 1, comprising:
inputting pump light into the gain layer, and activating the optical amplification function of the gain layer by adopting the pump light;
and inputting pump light into the gain layer by adopting a space pumping mode or a waveguide coupling mode or a pumping bonding mode.
8. The pump coupling method of claim 7, wherein inputting pump light into the gain layer by spatial pumping comprises:
pump light is emitted directly from the space above the gain layer and coupled into the gain layer.
9. The pump coupling method of claim 7, wherein the inputting of the pump light into the gain layer by waveguide coupling comprises:
and a pumping waveguide is led out from the side surface of the gain layer, and pumping light is input into the gain layer from the side surface through the pumping waveguide.
10. The pump coupling method of claim 7, wherein the inputting of the pump light into the gain layer by the pump bonding method comprises:
depositing a silicon dioxide and silicon nitride film as a bonding layer above the gain layer by adopting PECVD;
integrating a pump laser above the gain layer in a bonding mode;
and transmitting a pump light source by a pump laser to be input into the gain layer.
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