CN220272955U - Optical fiber amplification system based on multichannel erbium-doped waveguide array - Google Patents
Optical fiber amplification system based on multichannel erbium-doped waveguide array Download PDFInfo
- Publication number
- CN220272955U CN220272955U CN202321992780.3U CN202321992780U CN220272955U CN 220272955 U CN220272955 U CN 220272955U CN 202321992780 U CN202321992780 U CN 202321992780U CN 220272955 U CN220272955 U CN 220272955U
- Authority
- CN
- China
- Prior art keywords
- erbium
- waveguide array
- doped waveguide
- amplification system
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000013307 optical fiber Substances 0.000 title claims abstract description 40
- 230000003321 amplification Effects 0.000 title claims abstract description 25
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 25
- 230000003287 optical effect Effects 0.000 claims abstract description 34
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 25
- 239000000835 fiber Substances 0.000 claims abstract description 24
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims abstract description 16
- -1 erbium ions Chemical class 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052761 rare earth metal Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000005498 polishing Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000002679 ablation Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005283 ground state Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Landscapes
- Lasers (AREA)
Abstract
The utility model discloses an optical fiber amplification system based on a multichannel erbium-doped waveguide array, belonging to the technical field of optical fibers; comprising the following steps: n fiber lasers, n pump lasers, n wavelength division multiplexers, an erbium-doped waveguide array and n optical isolators; wherein n is a natural number greater than 1; the n output ports of the n fiber lasers are respectively connected with the signal ports of the n wavelength division multiplexers in a one-to-one correspondence manner; the pump port of each wavelength division multiplexer is connected with a pump laser; the output ports of the n wavelength division multiplexers are respectively connected with n input ports of the erbium-doped waveguide array through lens optical fibers; the n output ports of the erbium-doped waveguide array are respectively connected with n optical isolators through n lens optical fibers. The utility model has the advantages that: amplification of multiple optical signals is achieved on an erbium doped waveguide array.
Description
Technical Field
The utility model belongs to the technical field of optical fiber communication, and particularly relates to an optical fiber amplification system based on a multichannel erbium-doped waveguide array.
Background
In the field of optical fiber amplifiers, a common method is to use a section of gain fiber doped with rare earth ions as a gain medium, and to provide energy for the rare earth ions by coupling into pump light, and the rare earth ions in the fiber absorb the energy of the pump light to complete energy level transition. When the signal light is input, the signal light interacts with the excited rare earth ions, and the excited ions are excited to release energy. The intensity of the signal light is increased by the released energy, and the gain process of the signal light is completed.
The optical fiber amplifier is only suitable for single-channel signal amplification, and limited by the amplification channel and the ion doping concentration, so that the capability of amplifying signal light is limited. In practical application, the multipath signals are often required to be amplified, and when the optical fiber amplifier is used for amplifying, the problems that signal crosstalk is generated, the bandwidth utilization rate is low, the gain is limited, the whole amplifying system is complex and the like are unavoidable. The ion doping concentration of the integrated optical waveguide amplifier is several times of that of the traditional doped optical fiber, and meanwhile, a plurality of amplifying channels can be integrated on a very small waveguide chip, so that the integrated optical waveguide amplifier has the advantages of high integration level, multiple channels, small insertion loss, easiness in batch automatic production and the like. Thus, the integrated waveguide array is another way to achieve miniaturization and high integration of the development of the optical amplifying device. It is therefore necessary to develop a simple system and to put it into practical use so that the system amplifies by different factors as required while transmitting multiple signals.
Disclosure of Invention
The utility model aims to meet the actual demand and provides an optical fiber amplifying system based on a multichannel erbium-doped waveguide array, which can amplify multiple paths of optical signals on one waveguide array.
To achieve the above object, there is provided an optical fiber amplification system based on a multichannel erbium-doped waveguide array, comprising:
n fiber lasers, n pump lasers, n wavelength division multiplexers, an erbium-doped waveguide array and n optical isolators; wherein n is a natural number greater than 1;
the n output ports of the n fiber lasers are respectively connected with the signal ports of the n wavelength division multiplexers in a one-to-one correspondence manner; the pump port of each wavelength division multiplexer is connected with a pump laser; the output ports of the n wavelength division multiplexers are respectively connected with n input ports of the erbium-doped waveguide array through lens optical fibers; the n output ports of the erbium-doped waveguide array are respectively connected with n optical isolators through n lens optical fibers.
In the scheme of the optical fiber amplifying system based on the multichannel erbium-doped waveguide array, n is 3, and the number of single erbium-doped waveguides in the erbium-doped waveguide array is 3.
In the scheme of the optical fiber amplifying system based on the multichannel erbium-doped waveguide array, the concentration of erbium ions in the erbium-doped waveguide array is 2.0x10 20 /cm 3 。
In the scheme of the optical fiber amplifying system based on the multichannel erbium-doped waveguide array, the thickness of the erbium-doped waveguide array is 500nm, the width of the erbium-doped waveguide array is 2um, and the side wall angle is 80 degrees.
In the scheme of the optical fiber amplifying system based on the multichannel erbium-doped waveguide array, the erbium-doped waveguide array is rectangular with the length of 2 multiplied by 2 cm.
In the above-described scheme of the optical fiber amplifying system based on the multi-channel erbium-doped waveguide array, the single erbium-doped waveguide is S-shaped.
In the above-described scheme of the optical fiber amplification system based on the multichannel erbium-doped waveguide array, the length of the single erbium-doped waveguide is 7cm.
In the above-described scheme of the optical fiber amplification system based on the multichannel erbium-doped waveguide array, the erbium-doped waveguide array includes a silicon substrate layer, an erbium-doped glass wafer layer, and a chromium thin film layer.
In the above-described scheme of the optical fiber amplifying system based on the multichannel erbium-doped waveguide array, the optical isolator is connected to an optical power meter for measuring the average power of light.
In the scheme of the optical fiber amplifying system based on the multichannel erbium-doped waveguide array, the central peak value of the pump laser is 980nm, and the maximum pump power is 30W.
The positive effect that this application had is:
based on the technical scheme, the multi-channel optical amplification device is combined with an optical fiber waveguide array according to the energy level transition theory and the characteristics of an erbium ion electronic layer, and the waveguide is used as a gain medium, so that multi-channel optical amplification under a small size is realized; the output laser performance of each channel depends on the input fiber laser and the pump laser of the corresponding channel, and the output lasers of the channels are not mutually influenced; the integrated optical fiber is convenient to integrate with other photon devices, and has the advantages of compact structure, easy integration, high flexibility and the like.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a block diagram of an optical fiber amplification system based on a multichannel erbium-doped waveguide array according to an embodiment of the present utility model;
fig. 2 is a schematic structural diagram of a multi-channel erbium-doped waveguide array according to an embodiment of the present utility model.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. The components of the embodiments of the present utility model generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the utility model, as presented in the figures, is not intended to limit the scope of the utility model, as claimed, but is merely representative of selected embodiments of the utility model. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present utility model.
In the description of the present utility model, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.
First embodiment
The utility model provides an optical fiber amplifying system based on a multichannel erbium-doped waveguide array, as shown in fig. 1, comprising: n fiber lasers 1, n pump lasers 2, n wavelength division multiplexers 3, an erbium-doped waveguide array 4 and n optical isolators 5; wherein n is a natural number greater than 1;
the n output ports of the n fiber lasers 1 are respectively connected with the signal ports of the n wavelength division multiplexers 3 in a one-to-one correspondence manner; the pump port of each wavelength division multiplexer 3 is connected with the pump laser 2; the output ports of the n wavelength division multiplexers 3 are respectively connected with n input ports of the erbium-doped waveguide array 4 through lens optical fibers; the n output ports of the erbium-doped waveguide array 4 are respectively connected with n optical isolators 5 through n lens optical fibers.
The fiber laser 1 is a laser which uses rare earth element doped glass fiber as a gain medium and can form laser oscillation output.
The pump laser 2 may generate a pump light source for exciting a rare earth ion doped gain fiber such as erbium ions with a peak at 980nm and a maximum pump power of about 30W emitted.
The wavelength division multiplexer 3 may combine a series of optical signals carrying signals, but of different wavelengths, into a bundle for transmission along a single optical fibre so that a plurality of signals are transmitted over one fibre. For example, the signal light and the pump light are coupled into one signal for transmission.
The optical isolator 5 serves to effectively avoid unnecessary reflection and suppress amplifier spontaneous emission noise, that is, ASE noise, etc.
The erbium-doped waveguide array 4 is a gain medium, and can improve the doping concentration of erbium ions so as to amplify signals and realize higher gain.
The manufacturing method of the erbium-doped waveguide array comprises the following steps of:
s1, bonding erbium-doped glass with the thickness of 1um on a silicon substrate with the thickness of 300um to form a first erbium-doped glass wafer; the silicon substrate not only can transmit optical signals, but also can be used for manufacturing various optical path devices such as a receiver, a modulator, a light source and the like, and has the advantages of low cost, good uniformity, easiness in processing and stable performance; the concentration of erbium ions in the erbium-doped glass was 2.0X105/cm 3.
S2, uniformly depositing a chromium metal film layer with the thickness of 1um on the surface of the first erbium-doped glass wafer through a magnetron sputtering technology to serve as a hard mask, so as to form a second erbium-doped glass wafer.
S3, performing laser ablation on the surface of the chromium metal film layer by using a femtosecond laser technology, and moving the second erbium-doped glass wafer by using a displacement platform in the ablation process to obtain a required waveguide pattern so as to form a third erbium-doped glass wafer; ablation is a complex chemical-physical process of pyrolysis, melting, gasification, sublimation, radiation and the like of materials by utilizing the action of high-temperature high-speed air flow, and the ablation of the chromium metal film layer is carried out according to a required waveguide pattern; specifically, the center wavelength of the laser beam in the femtosecond laser technology is 1028nm, the pulse duration is 100fs, the provided spot size is 1um, and the translation resolution of the displacement platform is 80nm; taking n=3 as an example, as shown in fig. 2, 3 side-by-side erbium-doped waveguides are arranged in the erbium-doped waveguide array 4, and each erbium-doped waveguide has a length of 7cm and a shape similar to an S-shape, so that the effective length of the optical waveguide is increased, and the gain of the amplifier is increased.
S4, performing chemical mechanical polishing lithography on the third erbium-doped glass wafer to obtain an erbium-doped glass waveguide structure covered by the chromium metal film layer; photolithography is a process that transfers pictorial information to a wafer or dielectric layer; the polishing slurry in the chemical mechanical polishing lithography is a silica particle suspension with a particle diameter of 30 nm; the part not protected by the chromium metal film layer is etched.
S5, ablating the erbium-doped glass waveguide structure by using femtosecond laser to remove the chromium metal film layer covered on the erbium-doped glass waveguide structure.
S6, repeating the chemical mechanical polishing process to obtain the erbium-doped waveguide array 4 with smooth surfaces and side walls; the thickness and the vertical angle of the side wall of the erbium-doped waveguide array 4 are controlled by controlling the time of chemical mechanical polishing lithography, the thickness of the prepared erbium-doped waveguide array 4 is 500nm, the width of the prepared erbium-doped waveguide array is 2um, the angle of the side wall of the prepared erbium-doped waveguide array is 80 degrees, and the outside of the erbium-doped waveguide array 4 is a rectangle of 2 multiplied by 2 cm.
In the preparation process, the morphology of the erbium-doped waveguide can be observed through an electron microscope, and finally the erbium-doped waveguide array 4 comprising three layers of silicon substrate layers, erbium-doped glass wafer layers and chromium film layers is obtained.
Second embodiment
Taking n=3 as an example, the using method of the system comprises the following steps:
step 1, the output lasers of 3 fiber lasers 1 are respectively coupled into 3 wavelength division multiplexers 3 through optical fibers and pump lasers of 3 pump lasers 2;
step 2, respectively coupling optical signals output by the 3 wavelength division multiplexers 3 into an erbium-doped waveguide array 4 through lens optical fibers for amplification; the input port of the lens optical fiber, which is close to the multi-channel erbium-doped waveguide array 4, is a micro lens structure, so that the optical signal is coupled into the multi-channel erbium-doped waveguide array 4 in an extremely short-distance spatial light mode.
And 3, coupling the optical signals output by the output port of the erbium-doped waveguide array 4 into a lens optical fiber, isolating the optical signals through an optical isolator 5, and outputting the optical signals from the output end of the optical isolator 5.
Working principle: when the pump light generated by the pump laser 2 is coupled into the erbium doped waveguide array 4 of the doped gain medium, the doped ions in the gain medium undergo energy level transitions. The ions absorb the pump light energy, transitioning from the ground state to a high energy state, during which energy is transferred from the pump light into the dopant ions. When the signal light generated by the fiber laser passes through the erbium-doped waveguide array 4, the doped ions are transited from a high energy state to a lower energy level under the action of stimulated radiation, and simultaneously, the released energy is consistent with the signal light, so that the intensity of an input signal is increased by the released energy, and the signal amplification process is completed.
During the energy level transition, the erbium ion particle number N in the ground state 1 And the erbium ion particle number N at a lower energy level 2 The variation of (c) can be expressed as:
wherein h represents the Planck constant, v j Representing the frequency of radiation, sigma α Sum sigma e Respectively representing the cross-section coefficient and absorption cross-section coefficient of erbium ion radiation at the wavelength, τ represents the duration of metastable state energy level, and P j Indicating the power of the signal light, i j Indicating the power of the pump light,represents the number of particles in ground state, +.>Representing the number of particles at a lower energy level.
According to conservation of particle numbers, the upper and lower energy level particle numbers at each position in the waveguide should satisfy:
wherein,representing the total number of particles per unit volume.
The amplified signals pass through the optical isolator 5 in the transmission process, the optical isolator 5 avoids crosstalk of the signals, and meanwhile, the amplified optical signals are prevented from returning back to the erbium-doped waveguide array 4 again, the gain effect of signal light is affected, and the stability of output signals and the reliability of a system are improved.
The foregoing is merely a preferred embodiment of the present utility model and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present utility model, which are intended to be comprehended within the scope of the present utility model.
Claims (10)
1. An optical fiber amplification system based on a multichannel erbium-doped waveguide array, comprising: n fiber lasers (1), n pump lasers (2), n wavelength division multiplexers (3), an erbium-doped waveguide array (4) and n optical isolators (5); wherein n is a natural number greater than 1;
n output ports of the n fiber lasers (1) are respectively connected with signal ports of n wavelength division multiplexers (3) in a one-to-one correspondence manner; the pump port of each wavelength division multiplexer (3) is connected with a pump laser (2); the output ports of the n wavelength division multiplexers (3) are respectively connected with n input ports of the erbium-doped waveguide array (4) through lens optical fibers; the n output ports of the erbium-doped waveguide array (4) are respectively connected with n optical isolators (5) through n lens optical fibers.
2. The multi-channel erbium doped waveguide array based fiber amplification system of claim 1, wherein n is 3 and the number of individual erbium doped waveguides within the erbium doped waveguide array (4) is 3.
3. A multi-channel erbium doped waveguide array based fiber amplification system according to claim 1, wherein the concentration of erbium ions in said erbium doped waveguide array (4) is 2.0 x 10 20 /cm 3 。
4. A multi-channel erbium doped waveguide array based fiber amplification system according to claim 1, wherein said erbium doped waveguide array (4) has a thickness of 500nm, a width of 2um and a sidewall angle of 80 °.
5. A multi-channel erbium doped waveguide array based fiber amplification system according to claim 1, wherein said erbium doped waveguide array (4) is rectangular with a 2 x 2cm shape.
6. The multi-channel erbium-doped waveguide array-based fiber amplification system of claim 2, wherein the single erbium-doped waveguide is S-shaped.
7. The multi-channel erbium-doped waveguide array-based fiber amplification system of claim 6, wherein the single erbium-doped waveguide has a length of 7cm.
8. A multi-channel erbium doped waveguide array based fiber amplification system according to claim 2, wherein said erbium doped waveguide array (4) comprises a silicon substrate layer, an erbium doped glass wafer layer and a chromium thin film layer.
9. A multi-channel erbium doped waveguide array based fiber amplification system according to claim 1, wherein said optical isolator (5) is connected to an optical power meter for measuring the average power of the light.
10. The optical fiber amplification system based on a multichannel erbium doped waveguide array according to claim 1, characterized in that the pump laser (2) has a central peak of 980nm and a maximum pump power of 30W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321992780.3U CN220272955U (en) | 2023-07-27 | 2023-07-27 | Optical fiber amplification system based on multichannel erbium-doped waveguide array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321992780.3U CN220272955U (en) | 2023-07-27 | 2023-07-27 | Optical fiber amplification system based on multichannel erbium-doped waveguide array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220272955U true CN220272955U (en) | 2023-12-29 |
Family
ID=89317302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321992780.3U Active CN220272955U (en) | 2023-07-27 | 2023-07-27 | Optical fiber amplification system based on multichannel erbium-doped waveguide array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220272955U (en) |
-
2023
- 2023-07-27 CN CN202321992780.3U patent/CN220272955U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2014089858A1 (en) | Tunable narrow-linewidth array single-frequency fiber laser | |
| US20040218257A1 (en) | Evanescent-field optical amplifiers and lasers | |
| CN106125449B (en) | Preparation method of waveguide amplifier with erbium-doped tantalum oxide ridge structure | |
| Huang et al. | Fiber-device-fiber gain from a sol-gel erbium-doped waveguide amplifier | |
| Patel et al. | A compact high-performance optical waveguide amplifier | |
| AU2020101195A4 (en) | An ultra-wideband high gain multi-core fiber light source | |
| Barbier et al. | Erbium-doped glass waveguide devices | |
| CN111694093B (en) | Silicon-based photoelectron integrated chip with local light amplification and pumping coupling method | |
| CN220272955U (en) | Optical fiber amplification system based on multichannel erbium-doped waveguide array | |
| CN112213813A (en) | Ultra-wideband high-gain multi-core optical fiber light source | |
| US20030002771A1 (en) | Integrated optical amplifier | |
| Huang et al. | Sol-gel silica-on-silicon buried-channel EDWAs | |
| CN104345385A (en) | Silicon-based polymer planar optical waveguide amplifier doped with rare earth neodymium complex | |
| CN116247511A (en) | Glass-based high-power narrow-linewidth semiconductor laser based on heterogeneous integration | |
| WO2003077378A2 (en) | Multistage optical amplifier having a fiber-based amplifier stage and a planar waveguide-based amplifier stage | |
| Gates et al. | Fabrication of Er doped glass films as used in planar optical waveguides | |
| US6661567B2 (en) | Optical amplifier, optical amplifier hybrid assembly and method of manufacture | |
| CN220492413U (en) | Multichannel light-emitting system based on multi-concentration erbium-doped fiber | |
| JP2006505117A (en) | Optical amplifier | |
| US20050063426A1 (en) | Planar multiwavelength optical power supply on a silicon platform | |
| CN113866877B (en) | Polymer few-mode waveguide and preparation method thereof | |
| CN117374701A (en) | Rare earth doped gallium oxide waveguide amplifier, preparation method and planar waveguide | |
| CN221080620U (en) | Optical waveguide amplifier based on VCSEL light source pumping | |
| CN114759422B (en) | Communication band on-chip quantum memory based on erbium-doped optical waveguide | |
| Wang et al. | A Low-Fabrication-Temperature Erbium-Based Waveguide Amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |