CN114759422B - Communication band on-chip quantum memory based on erbium-doped optical waveguide - Google Patents
Communication band on-chip quantum memory based on erbium-doped optical waveguide Download PDFInfo
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- CN114759422B CN114759422B CN202210321226.6A CN202210321226A CN114759422B CN 114759422 B CN114759422 B CN 114759422B CN 202210321226 A CN202210321226 A CN 202210321226A CN 114759422 B CN114759422 B CN 114759422B
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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Abstract
The invention relates to an erbium-doped optical waveguide-based communication band on-chip quantum memory, and belongs to the technical field of quantum information science. The invention prepares the atomic frequency comb by taking the erbium-doped optical waveguide as a storage medium, and realizes the on-chip storage of the optical quantum state. The components of the quantum memory on the preparation communication wave band chip can be all from mature materials of the optical fiber communication wave band and optoelectronic devices, and are favorable for the assembly preparation and practical development of the quantum Internet of the optical communication wave band. The on-chip quantum memory of the optical communication wave band has the characteristics of miniaturization, integration, large broadband and multi-mode storage, and has important significance for the development of quantum Internet of the push-in quantum repeater.
Description
Technical Field
The invention belongs to the technical field of quantum information science, and particularly relates to a communication band quantum memory based on an erbium-doped optical waveguide.
Background
Quantum memories enable the storage of optical quantum states by exploiting interactions between light and atoms, which is crucial for the implementation of quantum relays and even quantum information networks. At this stage, the usual physical system for developing quantum memories includes: monoatomic, atomic ensemble, rare earth doped solid state ensemble, ion trap, NV/SiV color center, quantum dot, optomechanical vibrator, etc. The quantum storage protocol commonly used for realizing the solid-state quantum memory mainly comprises photon echo, electromagnetic induction transparency, reversible nonuniform stretching and atomic frequency combing. The rare earth doped solid state quantum memory based on the atomic frequency comb protocol not only has higher storage efficiency and longer storage time, but also can realize large-bandwidth and multi-mode storage.
In quantum networks, according to the quantum unclonable principle, quantum information encoded on single photons cannot be amplified by classical optical amplification techniques. Therefore, in the long-distance optical fiber transmission process, only photons of a communication band (around 1.5 μm) with the lowest transmission loss rate can be selected to transmit quantum information, and a quantum memory in a transmission system is required to have the capability of storing photons of the communication band. Erbium ions can undergo optical transitions when interacting with the optical field of a communications band having a wavelength around 1.5 μm. Thus, the erbium-doped solid material can be used as a storage medium of a large-bandwidth quantum memory based on the communication wave band of an atomic frequency comb protocol.
Along with the development of quantum networks, the development of integrated quantum devices is a necessary way, and for integrated quantum memories, optical waveguides are commonly used as storage media, and the main reason is that the optical waveguides have strong binding effect on light fields, can enhance interaction between light and atoms, and further can improve quantum storage efficiency. In the quantum memory adopting the waveguide, the free space coupling scheme of discrete components is almost adopted, the scheme brings great inconvenience for realizing high-efficiency coupling of light and the waveguide, limits the convenience of the quantum memory, is not beneficial to miniaturization and integration of the device, and increases the complexity of a large-scale quantum Internet. Therefore, there is a need in the quantum information field for an integrated, miniaturized, and practical communication band quantum memory.
Disclosure of Invention
The invention aims to solve the technical problems existing in the prior art and provides an on-chip quantum memory of a communication wave band based on an erbium-doped optical waveguide. The invention uses erbium-doped optical waveguide as quantum storage medium, combines with all-fiber packaging method, adopts quantum storage protocol based on atomic frequency comb, and realizes miniaturized, integrated, practical, large-bandwidth and multi-mode storage communication band solid-state quantum storage device.
In order to solve the above technical problems, the embodiment of the present invention provides an on-chip quantum memory of a communication band based on an erbium-doped optical waveguide, which includes a pump laser source 1, a phase modulator 2, an adjustable optical attenuator 3, a first optical switch 4, a polarization controller 5, a second optical switch 6 and an erbium-doped optical waveguide module 7, which are sequentially connected, wherein an output end of the polarization controller 5 is connected with a first input port of the second optical switch 6, and a second input port 16 of the second optical switch 6 is used for inputting photons to be stored;
the erbium-doped optical waveguide module 7 is composed of a first optical fiber collimator 9, an erbium-doped optical waveguide chip 11 and a second optical fiber collimator 14 which are fixed on a substrate 8 and are sequentially arranged, the erbium-doped optical waveguide chip 11 is composed of a matrix material 12 and an erbium-doped optical waveguide 13, and the output ends of the first optical fiber collimator 9 and the second optical switch 6 are connected through optical fibers;
the pump laser source 1 is used for providing pump light for the atomic frequency comb preparation process in the quantum memory;
the phase modulator 2 is used for realizing frequency shift of the pump light;
the first optical switch 4 is used for controlling pulse width, duty ratio and on-off of the pumping light;
the second optical switch 6 is used for selectively allowing photons or pump light to be stored to enter the erbium-doped optical waveguide module 7;
the erbium-doped optical waveguide 13 is a storage medium of a quantum memory, and pump laser input into the storage medium can interact with an erbium ion ensemble in the waveguide, so that an atomic frequency comb is prepared in the waveguide and used for storing photons to be stored.
On the basis of the technical scheme, the invention can be improved as follows.
Further, the pump laser source 1 is a solid laser, a semiconductor laser or a dye laser, and the pump laser source 1 can generate continuous pump light, and the central wavelength range is 1460 nm-1570 nm.
Further, the polarization controller 5 is a wave plate type polarization controller or an optical fiber ring type polarization controller.
Further, the phase modulator 2 is a phase modulator based on a KDP crystal or a phase modulator based on a lithium niobate crystal, and the working wavelength range of the phase modulator 2 is 1530nm to 1570nm.
Further, the working wavelength range of the first optical switch 4 is 1240 nm-1640 nm, and the switching time is 0.5ms.
Further, the erbium-doped optical waveguide 13 is formed by processing a semiconductor process, and the semiconductor process is composed of at least one of laser direct writing, proton exchange, precision machining, ultraviolet lithography, electron beam exposure and plasma etching.
Further, the erbium-doped optical waveguide 13 is an erbium-doped lithium niobate waveguide, erbium-doped yttrium vanadate waveguide or erbium-doped gadolinium vanadate waveguide.
The beneficial effects of the invention are as follows: the invention provides an on-chip quantum memory of a communication wave band based on an erbium-doped optical waveguide, which prepares frequency-shift pulse pump light through phase modulation and intensity modulation, injects the pump light into the erbium-doped optical waveguide through an all-fiber packaging coupling structure formed by a first fiber collimator 9 and a laser direct writing erbium-doped optical waveguide 13, and prepares an atomic frequency comb capable of absorbing photons of the communication wave band by utilizing the selective spectral hole burning effect of the pump light in an erbium ion ensemble positioned in the waveguide, thereby realizing a quantum storage protocol based on the atomic frequency comb. The device uses the erbium-doped optical waveguide as a storage medium, and can realize miniaturization and integration of the optical communication band solid quantum memory. Meanwhile, the all-fiber packaging coupling technology of the communication band optical fiber collimator and the optical waveguide is utilized to realize the all-fiber packaging of the solid quantum memory; the optical quantum memory provided by the invention adopts a quantum storage protocol based on an atomic frequency comb, so that the optical quantum memory has the characteristics of large bandwidth and multimode storage. The erbium-doped optical waveguide used by the invention has the advantages of low loss and on-chip integration, and other devices can come from mature photoelectronic devices, thereby being beneficial to system assembly preparation and practical development and being an important foundation for promoting quantum information practicability and constructing a quantum network.
Drawings
FIG. 1 is a schematic diagram of a quantum memory on a communication band chip based on an erbium-doped optical waveguide according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a weak coherent single photon source for testing the performance of quantum memory on a communication band chip based on erbium-doped optical waveguide according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a single photon counting device for testing the performance of quantum memory on a communication band chip based on erbium-doped optical waveguide according to an embodiment of the present invention;
fig. 4 is a plot of normalized coincidence count versus relative delay obtained in a measurement of the storage of a weakly coherent single photon wave packet by a quantum memory.
In the drawings, the list of components represented by the various numbers is as follows:
1. pump laser source, 2, phase modulator, 3, adjustable optical attenuator, 4, first optical switch, 5, polarization controller, 6, second optical switch, 7, erbium doped optical waveguide module, 8, substrate, 9, first optical fiber collimator, 10, glue, 11, erbium doped optical waveguide chip, 12, erbium doped material matrix, 13, erbium doped optical waveguide, 14, second optical fiber collimator, 15, second input port of second optical switch, 16, second semiconductor continuous laser, 17, second lithium niobate phase modulator, 18, lithium niobate intensity modulator, 19, second optical fiber attenuator, 20, second optical fiber polarization controller, 21, arbitrary waveform generator, 22, arbitrary function generator, 23, third optical switch, 24, third optical fiber polarization controller, 25, superconducting nanowire single photon detector, 26, time-to-digital converter, 27, computer.
Detailed Description
The principles and features of the present invention are described below with reference to the drawings, the examples are illustrated for the purpose of illustrating the invention and are not to be construed as limiting the scope of the invention.
As shown in fig. 1, the quantum memory on a communication band chip based on an erbium-doped optical waveguide provided by the embodiment of the invention includes a pump laser source 1, a phase modulator 2, an adjustable optical attenuator 3, a first optical switch 4, a polarization controller 5, a second optical switch 6 and an erbium-doped optical waveguide module 7, which are sequentially connected, wherein an output end of the polarization controller 5 is connected with a first input port of the second optical switch 6, and a second input port 15 of the second optical switch 6 is used for inputting photons to be stored;
the erbium-doped optical waveguide module 7 is composed of a first optical fiber collimator 9, an erbium-doped optical waveguide chip 11 and a second optical fiber collimator 14 which are fixed on a substrate 8 and are sequentially arranged, the erbium-doped optical waveguide chip 11 is composed of a base material 12 and an erbium-doped optical waveguide 13 (the erbium-doped optical waveguide 13 in the embodiment is prepared in the erbium-doped base material by utilizing a laser direct writing process), and the output ends of the first optical fiber collimator 9 and the second optical switch 6 are connected through optical fibers;
the pump laser source 1 is used for providing pump light for the atomic frequency comb preparation process in the quantum memory;
the phase modulator 2 is used for realizing frequency shift of the pump light;
the first optical switch 4 is used for controlling pulse width, duty ratio and on-off of the pumping light;
the second optical switch 6 is used for selectively allowing photons or pump light to be stored to enter the erbium-doped optical waveguide module 7;
the erbium-doped optical waveguide 13 is a storage medium of a quantum memory, and pump laser input into the storage medium can interact with an erbium ion ensemble in the waveguide, so that an atomic frequency comb is prepared in the waveguide and used for storing photons to be stored.
In the above embodiment, the pump laser source 1 is a semiconductor continuous laser, and is configured to output continuously tunable narrow linewidth continuous pump laser, with a central wavelength of 1531.8nm, a linewidth of about 10kHz, and a power of about 20mW.
The phase modulator 2 is a lithium niobate phase modulator, and the continuous pump laser output by the pump laser source 1 enters the phase modulator 2. The phase modulator 2 performs a frequency shift on the light input thereto. The phase modulator 2 shifts the frequency of light input into the phase modulator according to the voltage signal loaded on the phase modulator by a time-varying phase modulation method, so that the linear frequency sweep of the phase modulator in the range from 1GHz to 2GHz from the center frequency is realized. Specifically, under the action of an externally-applied modulation signal, the refractive index of the electro-optic crystal is changed, so that the light input into the phase modulator obtains a time-varying additional phase, and frequency shift is realized.
The adjustable optical attenuator 3 is an optical fiber adjustable attenuator, and the linear sweep frequency continuous pumping laser output by the phase modulator 2 is input into the adjustable optical attenuator 3 to realize the power adjustment of the linear sweep frequency laser.
The first optical switch 4 and the second optical switch 6 are micro-electromechanical system optical switches, the first optical switch 4 is provided with an input port and two output ports, the usable wavelength range is 1240-1640nm, and the extinction ratio is 75dB. The linear sweep frequency continuous pumping laser output by the adjustable optical attenuator 3 is input into the input port of the first optical switch 4. The first optical switch 4 outputs the linear sweep frequency continuous pumping laser light from the first output port of the first optical switch 4 under the control of high level for 200ms and outputs the rest of the laser light from the second output port of the first optical switch 4 under the control of low level in every 500ms period according to the electric pulse signal with the pulse width of 200ms and the period of 500ms loaded on the first optical switch. That is, the first output port of the first optical switch 4 has 200ms time in each period and is in an "on" state for the linear sweep continuous pumping laser; the rest of the time is in the "off" state.
The polarization controller 5 is an optical fiber polarization controller, and the linear sweep pulse pump laser output by the first output port of the first optical switch 4 is input into the polarization controller 5 to realize the adjustment of the polarization state of the linear sweep pulse pump laser.
The second optical switch 6 has two input ports, one output port, and the usable wavelength range is 1240-1640nm, and the extinction ratio is 75dB. The linear sweep pulse pump laser output from the polarization controller 5 is input to a first input port of the second optical switch 6; the second input port 15 is used for inputting photons to be stored. The second optical switch 6 outputs the linear sweep pulse pumping laser under the control of high level for the first 200ms in every 500ms period according to the electric pulse signal with the pulse width of 220ms and the period of 500ms loaded on the second optical switch, then no output is generated for 20ms, and the rest 280ms outputs photons to be stored under the control of low level. Therefore, the preparation process of the atomic frequency comb and the storage process of photons to be stored can be effectively separated in time, on one hand, noise introduced by the linear sweep pulse pumping laser in the storage process of the photons to be stored is avoided, and on the other hand, the single photon detection process that the linear sweep pulse pumping laser enters the application link of the subsequent solid-state quantum memory is avoided, and single photon detection equipment is damaged.
The first optical fiber collimator 9, the erbium-doped optical waveguide chip 11 and the second optical fiber collimator 14 are fixed on the substrate 8 by glue. The substrate 8 may be red copper, which has a relatively high thermal conductivity, so that the erbium-doped optical waveguide 13 can be sufficiently cooled in the low temperature environment of about 15mK required for operation of the solid state quantum memory. The light output by the second optical switch 6 enters the first optical collimator 9 through the optical fiber pigtail, the working wave band of the first optical collimator 9 is a communication wave band, the focal length is 1mm, and the beam waist diameter is 50 mu m.
The erbium-doped optical waveguide 13 is an erbium-doped lithium niobate waveguide processed by using a laser direct writing process, and light output by the first optical fiber collimator 9 is coupled into the erbium-doped optical waveguide 13 through free space, wherein the doping concentration of erbium ions is 0.1%. In order to couple the linear swept pulse pump laser energy output by the first fiber collimator 9 with the fundamental mode of the laser direct write erbium doped waveguide 13 with minimal loss, the polarization state of the linear swept pulse pump laser must be set to an optimal polarization state, which can be adjusted by the polarization controller 5.
The linear swept pulsed pump laser coupled into the erbium doped optical waveguide 13 prepares atomic frequency combs in the erbium ion ensemble in the waveguide by a selective spectral hole burning process. Since the background absorption duty ratio of the atomic frequency comb has a relation with the pump light power, in order to increase the background absorption duty ratio of the atomic frequency comb, the pump light power needs to be set to an optimal value, and the pump light power can be set to the optimal value by adjusting the pump light power by the adjustable optical attenuator 3.
Photons to be stored that are coupled into the erbium-doped optical waveguide 13 interact coherently with the atomic frequency comb and can be stored in the erbium-doped optical waveguide and released after a certain time, which is determined by the comb tooth spacing of the atomic frequency comb. The remaining pump light or photons released after storage are coupled into a second fiber collimator 14 and out of its pigtail after being output from the erbium doped optical waveguide 13. The second fiber collimator 14 operates in the communication band with a focal length of 1mm and a beam waist diameter of 50 μm.
After the fabrication of the quantum memory on the communication band chip based on the erbium-doped optical waveguide as shown in fig. 1 was completed, the storage performance of the quantum memory was tested using the weak coherent state single photon source system shown in fig. 2 and the single photon counting device shown in fig. 3.
The weak coherent single photon source system shown in fig. 2 comprises a second semiconductor continuous laser 16, a second lithium niobate phase modulator 17, a lithium niobate intensity modulator 18, a second fiber attenuator 19, a second fiber polarization controller 20, an arbitrary waveform generator 21, and an arbitrary function generator 22. The output end of the second semiconductor continuous laser 16 is connected to an optical fiber pigtail at one end of a second lithium niobate phase modulator 17, an optical fiber pigtail at the other end of the second lithium niobate phase modulator 17 is connected to an optical fiber pigtail at one end of a lithium niobate intensity modulator 18, an optical fiber pigtail at the other end of the lithium niobate intensity modulator 18 is connected to one end of a second optical fiber attenuator 19, the other end of the second optical fiber attenuator 19 is connected to one end of a second optical fiber polarization controller 20, and the other end of the second optical fiber polarization controller 20 is connected to the second input port 15 of the second optical switch 6 shown in fig. 1. The output end of the arbitrary waveform generator 21 is connected with the electrical input end of the second lithium niobate phase modulator 17; the arbitrary function generator 22 has two outputs, one connected to the electrical input of the lithium niobate intensity modulator 18 and the other for outputting a pulse synchronization signal.
The single photon counting device shown in fig. 3 comprises a third optical switch 23, a third optical fiber polarization controller 24, a superconducting nanowire single photon detector 25, a time-to-digital converter 26, and a computer 27, which are connected in sequence. The third optical switch 23 has an input connected to the output of the second fiber collimator 14 of fig. 1, a first output connected to the third fiber polarization controller 24, and a second output not connected to any device or equipment.
The second semiconductor continuous laser 16 outputs tunable narrow linewidth continuous pumping laser light with a center wavelength of 1531.8nm, a linewidth of about 10kHz and a power of about 20mW.
The continuous laser light output from the second semiconductor continuous laser 17 is input to a second lithium niobate phase modulator (17). The second lithium niobate phase modulator 17 shifts the frequency of the continuous laser light inputted thereto by 1.5GHz according to the signal inputted from the electrical input terminal thereof, so as to realize that the center frequency of the laser light coincides with the center frequency of the atomic frequency comb in the laser direct writing erbium-doped waveguide 13 in fig. 1.
The continuous laser light output by the second lithium niobate phase modulator 17 is input to a lithium niobate intensity modulator 18. The lithium niobate intensity modulator 18 modulates the continuous laser light inputted thereto into a pulse laser light having a pulse width of 4ns and a period of 400ns according to an electrical signal inputted from an electrical input terminal thereof.
The pulsed laser light output from the lithium niobate intensity modulator 18 is input to a second optical fiber attenuator 19. The second optical fiber attenuator 19 is composed of two cascaded mechanical optical fiber attenuators, and can convert the pulse laser input into the pulse laser into a weak coherent single photon wave packet by a method of attenuating power.
The weak coherent single photon wave packet output by the second optical fiber attenuator 19 is input to the second optical fiber polarization controller 20, and the second optical fiber polarization controller 20 can implement polarization adjustment of the weak coherent single photon wave packet.
The weak coherent state single light sub-packet output from the second fiber polarization controller 20 is input to the second input port 15 of the second optical switch 6 in fig. 1 as a photon to be stored. In order for the photons to be stored to couple with the fundamental mode of the erbium doped optical waveguide 13 with minimal loss, the polarization state of the photons to be stored must be set to an optimal polarization state, which can be adjusted by the polarization controller 5.
The weak coherent state single optical sub-packet released from the atomic frequency comb in the erbium doped optical waveguide 13 is incident on the third optical switch 23 after passing through the second optical fiber collimator 14. The third optical switch 23 has one input port and two output ports. The third optical switch 23 outputs the remaining pumping laser or fluorescence noise inputted thereto from the second output port thereof under high level control in every 500ms period according to the electric pulse signal with a pulse width of 220ms and a period of 500ms loaded thereon, preventing the partial light from being inputted and damaging the superconducting nanowire single photon detector 25; the weak coherent single photon wave packet input thereto is then output from its first output under low level control for 280 ms. The weak coherent single photon wave packet output from the first output end of the third optical switch 23 is input to the superconducting nanowire single photon detector 25 after passing through the third optical fiber polarization controller 24. Since the superconducting nanowire single photon detector 25 has polarization sensitivity, the polarization adjustment function of the third optical fiber polarization controller 24 can enable the weak coherent single photon wave packet to be in a polarization state which enables the superconducting nanowire single photon detector 25 to have the highest detection efficiency.
The time-to-digital converter 26 has two inputs, and the electrical pulse generated by the superconducting nanowire single photon detector 25 after detecting a single photon is input to one input of the time-to-digital converter 26, and the pulse synchronization signal output from the arbitrary function generator 22 in fig. 2 is input to the other input of the time-to-digital converter 26. The time-to-digital converter 26 delays the pulse signals input from the two input terminals to obtain coincidence count values of the input signals from the two input terminals at different relative delays, the relative delay data and the coincidence count values are transmitted to the computer in the form of digital signals, the computer normalizes the coincidence count input therein by using the maximum value thereof, and then visualizes the normalized coincidence count at different relative delays to obtain a relationship curve of the normalized coincidence count and the relative delay shown in fig. 4, wherein the physical significance of the relationship curve is the relative magnitudes of the photon numbers output from the erbium-doped optical waveguide 13 at different moments. The first pulse in fig. 4 represents the direct transmission of the weakly coherent single photon wavepacket in the erbium doped optical waveguide 13, while the second pulse represents the weakly coherent single photon wavepacket released by the laser direct write erbium doped waveguide 13 after 100ns storage. The result shows that the solid-state quantum memory based on the erbium-doped lithium niobate waveguide successfully realizes quantum storage of communication band weak coherent state single-light sub-wave packet.
The communication band light quantum memory based on erbium-doped optical waveguide is used for storing the quantum light source of the communication band and mainly adopts an atomic frequency comb protocol. According to the embodiment of the invention, the laser direct-writing erbium-doped lithium niobate waveguide is used for preparing the communication band quantum storage device, and the stable coupling of the optical field and the erbium-doped waveguide is realized by using the all-fiber packaging method. The quantum memory has the characteristics of full optical fiber packaging, low loss and convenience in use and carrying.
The invention prepares the atomic frequency comb by taking the erbium-doped optical waveguide as a storage medium, thereby realizing the storage of the optical quantum state. The components of each part of the quantum memory for preparing the communication wave band can be from mature materials of the optical fiber communication wave band and optoelectronic devices, and are favorable for the assembly preparation and practical development of the quantum Internet of the optical communication wave band. The quantum memory of the optical communication wave band has the characteristics of large bandwidth, multimode storage and easy compatibility with an optical fiber quantum communication system, and has important significance for the development of quantum Internet of the push-in quantum repeater.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (7)
1. The quantum memory on the communication wave band chip based on the erbium-doped optical waveguide is characterized by comprising a pumping laser source (1), a phase modulator (2), an adjustable optical attenuator (3), a first optical switch (4), a polarization controller (5), a second optical switch (6) and an erbium-doped optical waveguide module (7) which are sequentially connected, wherein the output end of the polarization controller (5) is connected with a first input port of the second optical switch (6), and a second input port (15) of the second optical switch (6) is used for inputting photons to be stored;
the erbium-doped optical waveguide module (7) is composed of a first optical fiber collimator (9), an erbium-doped optical waveguide chip (11) and a second optical fiber collimator (14) which are fixed on a substrate (8) and are sequentially arranged, the erbium-doped optical waveguide chip (11) is composed of a base material (12) and an erbium-doped optical waveguide (13), and the output ends of the first optical fiber collimator (9) and the second optical switch (6) are connected through optical fibers;
the pumping laser source (1) is used for providing pumping light for the atomic frequency comb preparation process in the quantum memory;
the phase modulator (2) is used for realizing frequency shift of the pump light;
the first optical switch (4) is used for controlling pulse width, duty ratio and on-off of the pumping light;
the second optical switch (6) is used for selectively allowing photons or pump light to be stored to enter the erbium-doped optical waveguide module (7);
the erbium-doped optical waveguide (13) is a storage medium of a quantum memory, pump laser input into the erbium-doped optical waveguide can interact with an erbium ion ensemble in the waveguide, and an atomic frequency comb is prepared in the waveguide and used for storing photons to be stored.
2. An erbium-doped optical waveguide based communication band on-chip quantum memory according to claim 1, characterized in that the pump laser source (1) is a solid state laser, a semiconductor laser or a dye laser, the pump laser source (1) being capable of generating continuous pump light with a central wavelength in the range 1460nm to 1570nm.
3. An erbium-doped optical waveguide based communication band on-chip quantum memory according to claim 1, characterized in that the polarization controller (5) is a waveplate polarization controller or a fiber ring polarization controller.
4. An erbium-doped optical waveguide based communication band on-chip quantum memory according to claim 1, characterized in that the phase modulator (2) is a phase modulator based on a KDP crystal or a phase modulator based on a lithium niobate crystal, and the operating wavelength range of the phase modulator (2) is 1530nm to 1570nm.
5. An erbium-doped optical waveguide based communication band on-chip quantum memory according to any of the claims 1 to 4, characterized in that the operating wavelength range of the first optical switch (4) is 1240 nm-1640 nm, switching time 0.5ms.
6. An erbium-doped optical waveguide based communication band on-chip quantum memory according to any of claims 1 to 4, characterized in that the erbium-doped optical waveguide (13) is fabricated using a semiconductor process consisting of at least one of laser direct writing, proton exchange, precision machining, ultraviolet lithography, electron beam exposure and plasma etching.
7. An erbium-doped optical waveguide based communication band on-chip quantum memory according to any of claims 1 to 4, characterized in that the erbium-doped optical waveguide (13) is an erbium-doped lithium niobate waveguide, an erbium-doped yttrium vanadate or an erbium-doped gadolinium vanadate waveguide.
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| ATE436106T1 (en) * | 2004-03-02 | 2009-07-15 | Univ Michigan State | LASER SYSTEM WITH ULTRA-SHORT LASER PULSE |
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| GB0921917D0 (en) * | 2009-12-15 | 2010-01-27 | Isis Innovation | Quantum memory |
| US9659651B1 (en) * | 2016-02-23 | 2017-05-23 | Corning Incorporated | Quantum memory systems and quantum repeater systems comprising chalcogenide optical fiber links and methods of storing and releasing photons using the same |
| KR102347720B1 (en) * | 2016-05-13 | 2022-01-07 | 코닝 인코포레이티드 | Quantum memory system and quantum repeater system including doped polycrystalline ceramic optical device, and method for manufacturing same |
| CN112753072A (en) * | 2018-09-24 | 2021-05-04 | 康宁股份有限公司 | Rare earth doped metal oxide ceramic waveguide quantum memory and manufacturing method thereof |
| US20220269974A1 (en) * | 2019-07-17 | 2022-08-25 | President And Fellows Of Harvard College | Nanophotonic quantum memory |
| US10951002B1 (en) * | 2019-12-04 | 2021-03-16 | Honeywell International Inc. | Bichromatic laser for quantum computing applications |
| CN111327369B (en) * | 2020-03-13 | 2021-07-02 | 电子科技大学 | Frequency domain multiplexing quantum channel basic link of optical fiber communication waveband |
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