CN111693201B - Tunneling type MEMS (micro-electromechanical system) air pressure sensor and application thereof - Google Patents
Tunneling type MEMS (micro-electromechanical system) air pressure sensor and application thereof Download PDFInfo
- Publication number
- CN111693201B CN111693201B CN202010529849.3A CN202010529849A CN111693201B CN 111693201 B CN111693201 B CN 111693201B CN 202010529849 A CN202010529849 A CN 202010529849A CN 111693201 B CN111693201 B CN 111693201B
- Authority
- CN
- China
- Prior art keywords
- pressure sensor
- air pressure
- tunneling
- annular metal
- graphene film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
Abstract
The invention relates to a tunneling type MEMS (micro-electromechanical systems) air pressure sensor and application thereof. The tunneling type MEMS air pressure sensor comprises a substrate, and an annular metal electrode and a graphene film which are sequentially arranged on the substrate; the graphene film covers the hollow cavity of the annular metal electrode, and the edge of the graphene film is arranged on the annular metal electrode. According to the invention, the graphene material is applied to the tunneling type air pressure sensor for the first time, compared with a common gold material electrode, the graphene material can effectively avoid the electromigration phenomenon, and the service life of the air pressure sensor is prolonged; meanwhile, as the tunneling current is generated at the tip of the electrode with the nanometer size, the air pressure sensor is easy to miniaturize, and the size and the shape of the electrode can be designed according to the use requirement, so that various tunneling current type air pressure sensors with the same principle are designed.
Description
Technical Field
The invention belongs to the technical field of air pressure sensors, and particularly relates to a tunneling type MEMS air pressure sensor and application thereof.
Background
The air pressure sensor is widely applied to the fields of meteorology, aerospace, deep space exploration, marine climate, airport ports, petrochemical industry, process equipment systems and the like. Due to the advantages of small size, light weight, low power consumption, low wafer-level mass production cost, integration and the like, the micro-electro-mechanical system (MEMS) air pressure sensor has wide application prospect and great market potential.
The conventional barometric sensors in the prior art mainly include capacitive, piezoresistive, resonant, and other barometric sensors, such as:
CN108072477A discloses a MEMS pressure sensor and a method for improving its long-term stability. The MEMS air pressure sensor comprises a stress isolation substrate, wherein the stress isolation substrate and a sensitive chip of the MEMS air pressure sensor or an air pressure sensitive structure substrate of a sensitive element are assembled together through a chip bonding process and are used for reducing thermal stress and residual stress of the air pressure sensitive structure caused by packaging and assembling, the stress isolation substrate is made of a glass material with the thickness larger than the maximum characteristic dimension of an air pressure sensitive film, and a pit structure is processed at the position, opposite to the air pressure sensitive film in the air pressure sensitive structure, of one side, far away from a bonding connection surface, of the stress isolation substrate.
CN203365045U discloses a capacitive air pressure sensor of a micro-electro-mechanical system. The capacitive air pressure sensor of the micro-electromechanical system comprises a substrate, a bonding layer, a lower capacitor electrode plate, an upper capacitor electrode plate, an insulating layer, heating resistor strips, an upper electrode lead-out, a lower electrode lead-out and two heating resistor strips lead-out, wherein the bottom surface of the substrate is provided with a vacuum cavity; the upper electrode lead-out and the lower electrode lead-out are respectively positioned on the substrate.
The air pressure sensor is generally large in size, and the microminiaturization design of the sensor is difficult to realize. Therefore, it is a technical difficulty to be solved urgently in the field to realize the microminiaturization design of the sensor and simultaneously improve the measurement accuracy of the sensor.
Disclosure of Invention
Aiming at the defect that the microminiaturization design of the sensor is difficult to realize in the prior art, the invention aims to provide a tunneling type MEMS (micro-electromechanical systems) air pressure sensor and application thereof. The tunneling type MEMS air pressure sensor disclosed by the invention uses a graphene material as a pressure-bearing film, and utilizes the quantum tunneling principle to design a sensor structure, so that the microminiaturization design of the sensor is realized, and the measurement precision of the sensor is improved.
In order to achieve the purpose, the invention adopts the following technical scheme:
one of the purposes of the present invention is to provide a tunneling type MEMS pressure sensor, which includes a substrate, and an annular metal electrode and a graphene film sequentially disposed on the substrate; the graphene film covers the hollow cavity of the annular metal electrode, and the edge of the graphene film is arranged on the annular metal electrode.
The hollow cavity is a hollow area enclosed by the metal electrode; the shape of the "annular metal electrode" is not specifically limited, and those skilled in the art can select the shape according to actual needs, which are exemplified by: circular rings, square rings, etc. The edge of the graphene film is arranged on the annular metal electrode, and all the edges of the graphene film are arranged on the annular metal electrode, namely: if the annular metal electrode and the graphene film are both circular, the radius of the graphene film is larger than the inner diameter of the annular metal electrode and smaller than the outer diameter of the annular metal electrode, and the graphene film covers the hollow cavity.
According to the invention, a graphene material is used as a pressure-bearing film, and a sensor structure is designed by utilizing a quantum tunneling principle, so that the microminiaturization design of the sensor is realized and the measurement precision of the sensor is improved.
The graphene film is used as a film and a pressure-bearing film for quantum tunneling of the sensor, the sensor structure is externally connected with a control circuit, and the pressure of the pressure borne by the sensor can be calculated according to the voltage of the control circuit under the condition that the deformation of the graphene film is unchanged; the invention designs an air pressure sensor product with smaller size and higher precision by utilizing the principle of tunneling current and the large elastic deformation property of graphene.
The tunneling type MEMS air pressure sensor is small in size, high in sensitivity and capable of detecting small air pressure changes.
Preferably, the material of the annular metal electrode is selected from any one of metal gold, metal silver, metal platinum, metal palladium and metal iridium or an alloy formed by combining at least two of the metal gold, the metal silver, the metal platinum, the metal palladium and the metal iridium.
Preferably, the edge of the graphene film is fixed on the annular metal electrode through adhesive encapsulation.
When the packaging is carried out, the adhesive is adopted for packaging, the graphene film is placed and then is added with a proper adhesive solution, and the graphene film is completely wrapped above the metal electrode.
Preferably, the adhesive comprises any one of or a combination of at least two of AB adhesive, thermal adhesive, epoxy adhesive, potting adhesive and UV shadowless adhesive.
Preferably, an annular metal gate is further disposed on the substrate, and preferably, the annular metal gate is disposed in a hollow cavity of the annular metal electrode.
The height of the annular metal gate is not particularly limited in the present invention, and can be selected by those skilled in the art according to actual needs.
Preferably, a drain electrode is further disposed on the substrate.
Preferably, the drain electrode is disposed in the hollow cavity of the annular metal gate, and preferably, the drain electrode is located at the center of the hollow cavity of the annular metal gate.
Preferably, in the substrate, the position covered by the annular metal electrode, the position covered by the annular metal gate, and the position covered by the drain are made of metal, and the rest is made of an insulating glass material.
The metal material of the substrate is not particularly limited, and may be conductive, and is exemplarily the same as the material of the annular metal electrode. The present invention does not specifically limit the lateral distance between the annular metal electrode, the annular metal gate and the drain, as long as the lateral distances do not contact each other, and those skilled in the art can select the lateral distance according to practical experience. The arrangement of the substrate can ensure that the electrodes are electrified smoothly.
Preferably, the graphene thin film has a thickness of 1 to 70nm (e.g., 2nm, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, or 65 nm), preferably 10 to 50 nm.
The thickness of the graphene film is too large, the elastic deformation amount of the graphene film is small, and the sensitivity of the sensor is low; the thickness is too small, the graphene film bears small air pressure under the condition of not breaking, and the range of the sensor is small.
The height of the annular metal electrode is not particularly limited in the present invention, and may be selected by a person skilled in the art according to practical experience.
Preferably, the tunneling type MEMS air pressure sensor has a volume of 8 x 10-15～2×10-10m3E.g. 9X 10- 15m3、1×10-14m3、3×10-14m3、5×10-14m3、8×10-14m3、1.99098×10-13m3、5×10-13、2×10-12m3、8×10-12、5×10--11m3Or 1X 10-10m3And the like.
It is a further object of the present invention to provide a method for using a tunneling MEMS pressure sensor as described in the first aspect of the present invention, the method comprising:
under the action of ambient atmospheric pressure and external circuit voltage, the distance between the tip of the drain electrode and the graphene film is controlled to be less than or equal to 2nm (such as 0.2nm, 0.5nm, 0.6nm, 0.8nm, 0.9nm, 1.0nm, 1.2nm, 1.4nm, 1.5nm, 1.6nm or 1.8 nm) to generate constant tunneling current, and the ambient air pressure is calculated by analyzing the voltage of the control circuit.
Preferably, the distance between the tip of the drain electrode and the graphene film is 0.5-1.2 nm, such as 0.6nm, 0.7nm, 0.8nm, 0.9nm, 1.0nm or 1.1 nm.
The tunneling current can be generated when the distance between the tip of the drain electrode and the graphene film is less than or equal to 2nm, but the distance is less than 0.2nm, and the graphene film is easy to deform and collide with the annular metal grid or the drain electrode, so that the graphene film is broken; tunneling cannot occur when the distance between the tip and the graphene film is too large (larger than 2nm), so that the sensor fails.
The height of the drain electrode is not particularly limited, and the drain electrode can be selected by a person skilled in the art according to actual needs; in the air pressure sensor without the ambient atmospheric pressure and the external circuit voltage, the distance between the tip of the drain electrode and the graphene film is not particularly limited, and the distance can be selected by a person skilled in the art according to actual needs, and the distance between the tip of the drain electrode and the graphene film can be controlled to be 1nm under the action of the ambient atmospheric pressure and the external circuit voltage, so that the air pressure sensor can be applied to the invention.
The tunneling type air pressure sensor meter designed by the invention adopts a PID control mode, the MATLAB performs PID control of a software part, and then another picoampere meter is used for outputting a voltage calculated by the MATLAB to an annular metal gate of a tunneling air pressure sensor sample, so that the distance between a source electrode and a drain electrode is constant, namely the tunneling current is kept stable.
The distance between the tip of the drain electrode and the graphene film is as follows: the tip is at a distance from the closest point of the graphene film.
The working principle of the tunneling type MEMS air pressure sensor is as follows: after the graphene film is stressed to deform downwards, the deformation quantity is related to the air pressure borne by the graphene film and the control voltage, and a corresponding expression can be obtained through simulation analysis; the tunneling current is ensured to be constant under the action of the control circuit, namely the distance between the source electrode (graphene film) and the tip end of the drain electrode is constant, namely the deformation of the graphene film is constant, and at the moment, the pressure to be measured can be calculated by utilizing the magnitude of the control voltage, so that the pressure sensing action is completed.
The invention discloses a calculation process for calculating the environmental air pressure by analyzing the voltage of a control circuit, which comprises the following steps: when the graphene film is under the action of ambient air pressure and voltage applied by the control circuit, the graphene film can generate elastic deformation. Carrying out stress analysis on the graphene film, and when the graphene film bears the action of the ambient air pressure (P), bearing the pressure F which is downward in direction and is in direct proportion to the ambient atmospheric pressureP＝PS1In which S is1The effective area of the graphene film is the effective area of the graphene film, so that the graphene film generates a downward deformation amount. When a voltage (V) is applied to the annular metal gate in the sensor structure, the attraction force of the graphene film, which is downward in direction and proportional to the voltage quadratic, is expressed as Fv＝ε0V2S2/2h2Wherein h is the distance between the annular metal grid and the graphene film, epsilon0Is a vacuum dielectric constant, S2The effective area of the annular metal gate ring is the effective area of the annular metal gate ring, and the graphene film is enabled to have a downward deformation amount under the action of the attraction force. The downward deformation of the graphene film can generate an upward elastic restoring force Fe. Finally, the graphene film is not deformed any more, and is kept in balance under the combined action of the three forces. Assuming that when the deformation amount of the center point of the graphene film is L, that is, when the distance between the center point of the graphene film and the tip of the drain electrode is K, electrons are emitted out over an escape barrier of metal to generate a quantum tunneling effect. In this case, when the ambient air pressure or the magnitude of the applied electric field changes, F is causedPOr FvMagnitude change, i.e. downward resultant force FP+FvThe displacement of the center point of the graphene film changes, the tunneling current changes accordingly, and the distance between the center point of the film and the tip of the drain electrode is larger than a certain value, so that the tunnel cannot be detectedPassing current.
The invention discloses a using method of tunneling type MEMS (micro-electromechanical systems) air pressure sensing, which comprises the following steps: will have a resultant downward force FP+FvKeeping the tunneling current constant to ensure that constant tunneling current is obtained as a working target, designing a control circuit, and keeping the resultant force constant by changing the voltage of the circuit when the ambient atmospheric pressure changes; and analyzing the voltage of the control circuit to calculate the ambient air pressure under the condition of generating constant tunneling current through the corresponding relation between the air pressure and the voltage, thereby realizing the action of the air pressure sensor.
It is a second object of the present invention to provide a use of the tunneling MEMS pressure sensor according to the first object, wherein the tunneling MEMS pressure sensor is used for any one or a combination of at least two of a barometer of a small unmanned aerial vehicle in the field of aviation, a miniature microphone in the field of electronics, and a pressure sensor in a bionic aircraft.
Compared with the prior art, the invention has the following beneficial effects:
the graphene tunneling type MEMS air pressure sensor can realize air pressure measurement with high precision; meanwhile, the volume of the air pressure sensor is small, quantum tunneling can occur at the tip of a tiny electrode, the size of the sensor can be further reduced by adopting the principle of tunneling current in the structure, the structure can be designed according to the use requirement, the use range is wide, and the graphene tunneling type MEMS air pressure sensor has wide application space in the market.
According to the invention, the graphene material is applied to the tunneling type air pressure sensor for the first time, compared with a common gold material electrode, the graphene material can effectively avoid the electromigration phenomenon, and the service life of the air pressure sensor is prolonged; meanwhile, as the tunneling current is generated at the tip of the electrode with the nanometer size, the air pressure sensor is easy to miniaturize, and the size and the shape of the electrode can be designed according to the use requirement, so that various tunneling current type air pressure sensors with the same principle are designed.
Drawings
Fig. 1 is a side view of a tunneling MEMS pressure sensor according to embodiment 1 of the present invention;
fig. 2 is a side view of a structure for bearing air pressure after the tunneling MEMS air pressure sensor is packaged according to embodiment 1 of the present invention;
fig. 3 is a force analysis diagram of a tunneling MEMS pressure sensor according to an embodiment 1 of the present invention;
fig. 4 is a two-dimensional axisymmetric structural diagram of a tunneling MEMS pressure sensor according to embodiment 1 of the present invention;
fig. 5 is a three-dimensional diagram of the tunneling MEMS pressure sensor provided in embodiment 1 of the present invention under the action of multiple physical fields;
fig. 6 is a voltage distribution diagram of the tunneling MEMS pressure sensor provided in embodiment 1 of the present invention under the action of multiple physical fields;
fig. 7 is a deformation diagram of the tunneling MEMS pressure sensor provided in embodiment 1 of the present invention under the action of multiple physical fields.
Detailed Description
For the purpose of facilitating an understanding of the present invention, the present invention will now be described by way of examples. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
The graphene film adopted by the embodiment of the invention is as follows: silicon nickel plated substrate CVD multilayer graphene from graphene supermarket.
Example 1
This embodiment provides a volume of 1.99098 × 10-13m3The tunneling type MEMS air pressure sensor (see fig. 1 for a side view of the structure thereof) includes a substrate 1, and an annular metal electrode 2 and a graphene film 3 sequentially disposed on the substrate; the graphene film 3 covers the hollow cavity of the annular metal electrode 2, and the edge of the graphene film 3 is packaged and fixed on the annular metal electrode 2 through an adhesive; the substrate 1 is also provided with an annular metal grid 4, and the annular metal grid 4 is arranged in a hollow cavity of the annular metal electrode 2; the substrate 1 is also provided with a drain electrode 5; the drain electrode is arranged at the center of the hollow cavity of the annular metal grid;
the material of the annular metal electrode in this embodiment is gold; the annular metal grid is made of metal gold; the drain electrode is made of metal gold; the position covered by the annular metal electrode, the position covered by the annular metal grid electrode and the position covered by the drain electrode in the substrate are made of metal gold, and the rest parts of the substrate are made of insulating glass materials;
the height of the annular metal electrode in the embodiment is 15 μm; the height of the drain electrode is 2.5 mu m; the height of the annular metal grid is 2.5 mu m; the thickness of the graphene film is 50 nm.
Fig. 2 is a side view of the structure subjected to the action of air pressure after the tunneling MEMS air pressure sensor is packaged, in which, as can be seen from the figure, the graphene film is elastically deformed when subjected to the action of ambient air pressure and voltage applied by the control circuit, the 1-substrate, the 2-annular metal electrode, the 3-graphene film, the 4-annular metal gate, the 5-drain electrode, and the 6-adhesive are provided.
Performing stress analysis on the graphene film (the stress analysis diagram is shown in fig. 3, and the name of each electrode in the diagram refers to fig. 2), and when the graphene film is subjected to the action of the ambient air pressure (10000Pa), subjecting the graphene film to a pressure F which is downward and proportional to the ambient atmospheric pressureP＝PS1In which S is1＝7.8539×10-9m2The effective area of the graphene film is used, so that the graphene film generates a downward deformation amount; when a voltage (200V) is applied to the annular metal gate in the sensor structure, the attraction force of the graphene film, which is downward in direction and proportional to the voltage squared, is expressed as Fv＝ε0V2S2/2h2Wherein h is 10 μm which is the distance between the annular metal grid and the graphene film, epsilon0Is a vacuum dielectric constant, S2＝2.886×10-9m2The effective area of the annular metal grid electrode ring is the effective area of the annular metal grid electrode ring, and the graphene film is enabled to generate a downward deformation amount under the action of the attraction force; the downward deformation of the graphene film can generate an upward elastic restoring force Fe(ii) a Finally, the graphene film is not deformed any more, and is kept balanced under the combined action of the three forces; when the deformation amount at the center point of the graphene film is L0.6149 μm, that is, the graphene film is closest to the drain tipWhen the distance between the points is 1nm, electrons are emitted out of the escape barrier of the metal to generate quantum tunneling effect.
Fig. 4 is a two-dimensional axisymmetric structural diagram (unit of vertical axis is × 10) of the tunneling MEMS pressure sensor provided in this embodiment-6m, horizontal axis unit is x 10-5m) as can be seen, the barosensor designed herein is a two-dimensional axisymmetric structure with a tip electrode in the center, a width of 2.5 μm, a two-dimensional pattern of ring electrodes on the right, a width of 17.5 μm, and a rightmost electrode ring width of 15 μm. In order to control the effective connection of the circuit, the same metal material of the electrode is still used for the substrate under the electrode.
Fig. 5 is a three-dimensional action diagram of the tunneling MEMS pressure sensor provided in this embodiment under the action of multiple physical fields (the ambient pressure borne by the graphene film is 10000 Pa; and the voltage applied to the ring-shaped metal gate is 200V), and the total displacement is measured.
Fig. 6 is a voltage distribution diagram of the tunneling MEMS pressure sensor provided in this embodiment under the action of multiple physical fields (the ambient pressure borne by the graphene film is 10000 Pa; the voltage applied to the ring-shaped metal gate is 200V, and the abscissa in this figure and the abscissa in fig. 4 are both the lateral dimensions of the pressure sensor), and it can be seen from the figure that after the ring-shaped metal gate is turned on with a control voltage, the electric field intensity at each position in the sensor structure gradually decreases with the increase of the distance from the ring-shaped metal gate, and the downward electrostatic force on the graphene film formed by the control voltage can be regarded as uniform distribution.
Fig. 7 is a deformation diagram of the tunneling MEMS pressure sensor provided in this embodiment under the action of multiple physical fields, and it can be seen from the diagram that, under the condition that the applied control voltage (V1) is constant, the displacement amount of the center point of the graphene film increases with the increase of the pressure (P), and shows a nonlinear change. When the same air pressure is applied, the displacement of the center point of the graphene film is increased along with the increase of the voltage.
Example 2
The difference from example 1 is that the graphene thin film has a thickness of 30 nm.
Example 3
The difference from example 1 is that the thickness of the graphene thin film is 70 nm.
Example 4
The difference from example 1 is that the graphene thin film has a thickness of 100 nm.
And (3) performance testing:
the precision of the tunneling type MEMS air pressure sensor obtained in each example and each comparative example is tested:
TABLE 1
| Sensitivity of the probe | |
| Example 1 | 7.284V/Pa |
| Example 2 | 2.29V/Pa |
| Example 3 | 0.909137V/Pa |
| Example 4 | 0.8148V/Pa |
As can be seen from the comparison between example 1 and examples 2-4, the accuracy of the sensor decreases with the increase of the thickness of the graphene film, and therefore the optimal effect can be achieved when the thickness is selected to be 10-50 nm.
The applicant states that the present invention is illustrated by the above examples to show the detailed process equipment and process flow of the present invention, but the present invention is not limited to the above detailed process equipment and process flow, i.e. it does not mean that the present invention must rely on the above detailed process equipment and process flow to be implemented. It should be understood by those skilled in the art that any modification of the present invention, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
Claims (11)
1. A tunneling type MEMS (micro-electromechanical systems) air pressure sensor is characterized by comprising a substrate, and an annular metal electrode and a graphene film which are sequentially arranged on the substrate;
the graphene film covers the hollow cavity of the annular metal electrode, and the edge of the graphene film is arranged on the annular metal electrode;
the substrate is also provided with an annular metal grid, and the annular metal grid is arranged in a hollow cavity of the annular metal electrode;
the substrate is also provided with a drain electrode, the drain electrode is arranged in the hollow cavity of the annular metal grid electrode, and the drain electrode is arranged in the center of the hollow cavity of the annular metal grid electrode.
2. The tunneling MEMS gas pressure sensor according to claim 1, wherein the material of the annular metal electrode is selected from the group consisting of gold, silver, platinum, palladium, and iridium, or an alloy of any one or a combination of at least two thereof.
3. The tunneling-type MEMS air pressure sensor according to claim 1, wherein the edge of the graphene film is fixed on the annular metal electrode by adhesive encapsulation.
4. The tunneling MEMS air pressure sensor according to claim 3, wherein the adhesive comprises any one of or a combination of at least two of AB glue, thermal glue, epoxy glue, potting glue, and UV shadowless glue.
5. The tunneling-type MEMS pressure sensor according to claim 1, wherein the substrate is made of metal at a position covered by the annular metal electrode, at a position covered by the annular metal gate, and at a position covered by the drain, and the rest is made of an insulating glass material.
6. The tunneling-type MEMS air pressure sensor according to claim 1, wherein the graphene film has a thickness of 1 to 70 nm.
7. The tunneling-type MEMS air pressure sensor according to claim 1, wherein the graphene film has a thickness of 10 to 50 nm.
8. The tunneling-type MEMS air pressure sensor of claim 1, wherein the tunneling-type MEMS air pressure sensor has a volume of 8 x 10-15～2×10-10m3。
9. A method of using the tunneling MEMS air pressure sensor according to any of claims 1-8, the method comprising:
under the action of ambient atmospheric pressure and external circuit voltage, the distance between the tip of the drain electrode and the graphene film is controlled to be less than or equal to 2nm, constant tunneling current is generated, and the voltage of the control circuit is analyzed to calculate the ambient air pressure.
10. The use method of claim 9, wherein the distance between the tip of the drain electrode and the graphene film is 0.2-2 nm.
11. Use of a tunneling MEMS pressure sensor according to one of claims 1-8 for any one or a combination of at least two of a barometer for a drone in the field of aviation, a miniature microphone in the field of electronics, and a pressure sensor in a bionic aircraft.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010529849.3A CN111693201B (en) | 2020-06-11 | 2020-06-11 | Tunneling type MEMS (micro-electromechanical system) air pressure sensor and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010529849.3A CN111693201B (en) | 2020-06-11 | 2020-06-11 | Tunneling type MEMS (micro-electromechanical system) air pressure sensor and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111693201A CN111693201A (en) | 2020-09-22 |
| CN111693201B true CN111693201B (en) | 2022-04-12 |
Family
ID=72480377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010529849.3A Active CN111693201B (en) | 2020-06-11 | 2020-06-11 | Tunneling type MEMS (micro-electromechanical system) air pressure sensor and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111693201B (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1279338C (en) * | 2004-11-19 | 2006-10-11 | 清华大学 | Resonant tunneling micro mechanical force sensor and method for manufacturing the same |
| CN101993035B (en) * | 2009-08-19 | 2013-06-05 | 中国科学院物理研究所 | Switch element for graphene sodium electromechanical system |
| CN104596683A (en) * | 2015-02-12 | 2015-05-06 | 南京大学 | Pressure sensor based on stratified materials and piezoelectric effect measuring system |
| JP6696112B2 (en) * | 2015-03-31 | 2020-05-20 | 大日本印刷株式会社 | SENSOR MODULE, METHOD OF MOUNTING THE SAME, AND STRUCTURE WITH SENSOR MODULE |
| CN110057475B (en) * | 2019-05-24 | 2021-01-22 | 南京邮电大学 | High-sensitivity graphene piezoresistive strain sensor |
-
2020
- 2020-06-11 CN CN202010529849.3A patent/CN111693201B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN111693201A (en) | 2020-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Cao et al. | Research status and development trend of MEMS switches: A review | |
| US9625488B2 (en) | Variable area capacitive lateral acceleration sensor and preparation method thereof | |
| CN103487474B (en) | A kind of have the MEMS capacitive humidity sensor that high sensitivity quickly responds | |
| Tian et al. | The novel structural design for pressure sensors | |
| Liu et al. | Thermal-performance instability in piezoresistive sensors: Inducement and improvement | |
| Bakhoum et al. | Capacitive pressure sensor with very large dynamic range | |
| JP2009519454A (en) | Microelectromechanical system with deformable part and stress sensor | |
| CN112505438B (en) | Miniature electric field sensing device based on electrostatic force and piezoresistive effect | |
| Li et al. | Design and optimization of a novel structural MEMS piezoresistive pressure sensor | |
| CN103792267B (en) | A kind of differential capacitance type humidity sensor | |
| CN100487461C (en) | Metal capacitance microaccelerator | |
| Seena et al. | A novel piezoresistive polymer nanocomposite MEMS accelerometer | |
| CN111693201B (en) | Tunneling type MEMS (micro-electromechanical system) air pressure sensor and application thereof | |
| Xu et al. | An SOI-structured piezoresistive differential pressure sensor with high performance | |
| CN1492215A (en) | Integrated temperature, humidity and atmospheric pressure sensor chip | |
| Rajavelu et al. | Enhanced sensitivity with extended linearity in MEMS piezoresistive pressure sensor | |
| Arthur et al. | Manufacture of micro-sensors and actuators for flow control | |
| US9689933B2 (en) | Magnetic field sensor | |
| Ni et al. | Monolithic composite “pressure+ acceleration+ temperature+ infrared” sensor using a versatile single-sided “SiN/Poly-Si/Al” process-module | |
| CN109231157B (en) | Pressure and displacement integrated MEMS sensor combining four-beam circular membrane and coaxial cylinder | |
| CN1571182A (en) | Capacitor type semiconductor pressure sensor | |
| Achouch et al. | Improvement of the performance of a capacitive relative pressure sensor: case of large deflections | |
| Saxena et al. | An efficient microfluidic pressure sensing structure optimization using microcantilever integration | |
| Izquierdo et al. | Improving synthesis and testing conditions for bio-inspired carbon nanotube artificial hair sensors: Design, construction, reproduction, and calibration | |
| CN203132745U (en) | Nano-film pressure sensor based on sacrificial layer technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |