CN111669885A - Plasma processing apparatus - Google Patents
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- CN111669885A CN111669885A CN202010093189.9A CN202010093189A CN111669885A CN 111669885 A CN111669885 A CN 111669885A CN 202010093189 A CN202010093189 A CN 202010093189A CN 111669885 A CN111669885 A CN 111669885A
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- 238000001514 detection method Methods 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 12
- 238000006073 displacement reaction Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
- H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2240/00—Testing
- H05H2240/10—Testing at atmospheric pressure
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2245/00—Applications of plasma devices
- H05H2245/40—Surface treatments
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
Abstract
The present invention provides a plasma processing apparatus including a voltage-applied electrode to which an output voltage outputted from a power supply unit is applied, the plasma processing apparatus processing an object to be processed by plasma generated between the voltage-applied electrode and a counter electrode facing the voltage-applied electrode, the plasma processing apparatus including: an actuator for moving the voltage-applied electrode and the object to be processed relative to each other; an insulating portion disposed between the counter electrode and the actuator; and a current detection unit that detects a current flowing through the counter electrode.
Description
Technical Field
The present invention relates to a plasma processing apparatus.
Background
Nowadays, the following techniques are mostly utilized: the inside of the closed container is depressurized to generate plasma, and the work disposed in the closed container is subjected to plasma processing. Patent document 1 discloses an example of such a plasma processing apparatus that performs plasma processing.
The plasma processing apparatus of patent document 1 is an apparatus for performing plasma processing by housing a processing object in a processing chamber, and includes a discharge detection sensor. The discharge detection sensor has a plate-like dielectric member and a probe electrode.
One surface of the dielectric member is mounted in the vacuum chamber so as to face the plasma generated in the processing chamber. The probe electrode is disposed on the other surface of the dielectric member. The probe electrode is connected to the signal recording unit via a detection lead.
A potential corresponding to the state of the plasma is induced in the probe electrode. The potential of the probe electrode is guided to the signal recording portion by the detection wire, so that a signal of a potential change corresponding to the state of the plasma is recorded by the signal recording portion. Thus, when an abnormal discharge or the like occurs in the processing chamber, the state of the plasma fluctuates, and the fluctuation is detected as a potential change of the probe electrode.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 2009 and 135253
Disclosure of Invention
Problems to be solved by the invention
However, the plasma processing apparatus is mounted with an actuator or the like for conveying the object to be processed, and there is a possibility that noise is generated in the actuator due to electromagnetic waves received from a power supply for generating plasma, and in the above-mentioned patent document 1, the influence of the noise on the discharge detection sensor is not considered.
In particular, in recent years, a technique for stably performing plasma discharge under atmospheric pressure has been established, and plasma treatment in an open space has been practically used. In such atmospheric pressure plasma processing, a higher voltage needs to be applied to the electrode, and the above-described noise has a greater influence.
In view of the above circumstances, an object of the present invention is to provide a plasma processing apparatus capable of detecting a plasma discharge state with high accuracy by a simple configuration.
Means for solving the problems
A plasma processing apparatus according to an example of the present invention includes a voltage-applied electrode to which an output voltage output from a power supply unit is applied, and processes an object to be processed by plasma generated between the voltage-applied electrode and a counter electrode facing the voltage-applied electrode, the plasma processing apparatus including: an actuator for moving the voltage-applied electrode and the object to be processed relative to each other; an insulating section disposed between the counter electrode and the actuator; and a current detection unit that detects a current flowing through the counter electrode.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the plasma processing apparatus of the present example, the plasma discharge state can be detected with high accuracy with a simple configuration.
Drawings
Fig. 1 is a diagram schematically showing the overall configuration of a plasma processing apparatus according to a first embodiment.
Fig. 2 is a diagram showing an example of waveforms of an output voltage applied to a voltage-applied electrode and a detection current signal detected by a current detection unit in the plasma processing apparatus according to the first embodiment.
Fig. 3 is a diagram showing an example of waveforms of output voltage and detection current signals in the plasma processing apparatus of the comparative example.
Fig. 4 is a plan view showing an example of a process for treating an object to be treated.
Fig. 5 is a diagram schematically showing the overall configuration of a plasma processing apparatus according to the second embodiment.
Fig. 6 is a diagram schematically showing the overall configuration of a plasma processing apparatus according to a third embodiment.
Fig. 7 is a diagram schematically showing the overall configuration of a plasma processing apparatus according to the fourth embodiment.
In the figure:
1-an object to be processed, 11-an opposite side electrode surface, 2-a voltage-applying electrode, 21-an opposite side electrode surface, 3-a dielectric portion, 4-a power supply portion, 41-a first output end, 42-a second output end, 5-a stage, 6-an insulating portion, 7-an actuator, 8-a signal processing box, 81-a current detection portion, 82-a determination portion, 10-a plasma processing device, 15-a displacement meter, 101-103-a plasma processing device, 20-a voltage-applying electrode, 201-an opposite side electrode surface, 30-a dielectric portion, 40-a power supply portion, 401-a first output end, 402-a second output end, 50-an opposite electrode, 501-an opposite side electrode surface, 60-an insulating portion, 70-an actuator, 80-a signal processing box, 801-a current detection portion, 802-a determination portion, 90-an object to be processed, L1-a first wire, L2-a second wire, L3-a third wire, L4-a fourth wire, l5-fifth line, L6-sixth line, L7-seventh line.
Detailed Description
Hereinafter, exemplary embodiments of the present invention will be described with reference to the drawings.
< 1. first embodiment >
Fig. 1 is a diagram schematically showing the overall configuration of a plasma processing apparatus 10 according to a first embodiment.
The plasma processing apparatus 10 shown in fig. 1 generates plasma at atmospheric pressure to perform plasma processing on a metal object 1 to be processed. The plasma processing apparatus 10 includes a voltage-applied electrode 2, a dielectric portion 3, a power supply portion 4, a stage 5, an insulating portion 6, and an actuator 7.
The power supply section 4 has a first output terminal 41 and a second output terminal 42. The power supply unit 4 applies a high-frequency and high-voltage output voltage to the voltage-applying electrode 2 from the first output terminal 41. The output voltage is an alternating voltage. That is, the plasma processing apparatus 10 includes the voltage-application electrode 2, and applies the output voltage output from the power supply unit 4 to the voltage-application electrode 2. The power supply unit 4 has a first output terminal 41 for applying an output voltage to the voltage-application electrode 2 and a second output terminal 42 different from the first output terminal 41.
The frequency of the voltage applied by the power supply unit 4 is, for example, 1kH to 100 kHz. The waveform of the voltage applied by the power supply unit 4 is preferably a pulse waveform, but may be a sine wave, a rectangular wave, or the like, and a known waveform used for atmospheric pressure plasma discharge may be used. The voltage applied by the power supply unit 4 is, for example, 5 to 20kVpp, and is appropriately set according to a gap between the voltage-applied electrode 2 and the object 1.
The object 1 is made of metal and is opposed to the voltage-application electrode 2 in the vertical direction. The voltage-applied electrode 2 has an opposing-side electrode surface 21 as an end surface on the side opposing the object 1. The object 1 to be treated has an opposing electrode surface 11 as an end surface on the side opposing the voltage-applied electrode 2.
The dielectric portion 3 is disposed on the opposite-side electrode surface 21. As a material of the dielectric portion 3, a ceramic material such as alumina or zirconia, or a free-cutting ceramic, or the like is suitably used. A gap S1 is formed between the dielectric portion 3 and the object 1. The opposite electrode surface 11 as the surface to be processed of the object 1 is plasma-processed by the plasma P generated in the slit S1. The object 1 to be processed functions as a counter electrode facing the voltage-applied electrode 2, and the object 1 to be processed is directly processed by the plasma P generated between the dielectric portion 3 and the object 1 to be processed. That is, the plasma processing apparatus 10 processes the object 1 to be processed with plasma generated between the voltage-applied electrode 2 and the counter electrode 1 opposed to the voltage-applied electrode 2.
The table 5 mounts the object 1 to be processed and holds the object 1 to be processed. That is, the plasma processing apparatus 10 includes a stage 5 on which the object 1 to be processed is placed. The table 5 is made of metal.
The insulating portion 6 is disposed between the table 5 and the actuator 7. That is, the insulating portion 6 is disposed between the counter electrode 1 and the actuator 7. The insulating portion 6 is made of, for example, a sheet-like insulating material. The insulating portion 6 electrically insulates the table 5 from the actuator 7.
The actuator 7 conveys the object 1 to be processed together with the table 5 and the insulating section 6 in the conveying direction. That is, the actuator 7 moves the voltage-applied electrode 2 and the object 1 relatively.
The table 5 is connected to the second output terminal 42 via a first line L1. The signal processing box 8 houses a current detection unit 81 and a determination unit 82. The current detection unit 81 is disposed in the middle of the first line L1. That is, the current detection unit 81 is disposed on the first line L1 that conducts the counter electrode 1 and the second output terminal 82.
The actuator 7 is grounded through a second line L2. The first line L1 is not connected to the second line L2 that grounds the actuator 7.
The current detection unit 81 is connected to the table 5 via a third line L3. That is, the third line L3 is a part of the first line L1.
The current detection unit 81 is composed of, for example, a resistor that converts a current into a voltage. When discharge occurs in the gap S1, a discharge current flows through the current detection unit 81 via the object 1 and the table 5. Thereby, the current detection unit 81 detects the discharge current. That is, the current detection unit 81 detects the current flowing through the counter electrode 1.
The determination unit 82 performs determination processing based on the detection result of the current detection unit 81. A specific example of the determination by the determination section 82 is described below.
< 2. plasma discharge >
In a plasma processing apparatus 10 for performing plasma processing on an object 1 to be processed under atmospheric pressure, a dielectric portion 3 is disposed in a voltage-applied electrode 2, and a high-voltage and high-frequency output voltage is applied to the voltage-applied electrode 2 by a power supply portion 4, thereby generating dielectric barrier discharge in a gap S1. The electric charge carried by the discharge current is accumulated in the dielectric portion 3, and the voltage applied to the gap S1 is reduced, thereby automatically stopping the discharge. This causes the dielectric barrier discharge to be a pulse-like discharge, and stable atmospheric pressure non-thermal equilibrium plasma can be obtained.
The processing gas may be supplied to the slit S1 by the gas supply unit. The processing gas is nitrogen, a mixed gas of nitrogen and air, or the like, and the kind of the gas is not limited.
Here, fig. 2 is a diagram showing an example of waveforms of the output voltage V applied to the voltage-applied electrode 2 and the detection current signal I detected by the current detection unit 81 in the plasma processing apparatus 10 according to the present embodiment. Fig. 2 shows, as an example, a case where a sine-wave output voltage V is applied.
As shown in fig. 2, a pulse-like discharge current is generated at about the timing of switching the polarity of the output voltage V. In the region a, for example, of fig. 2, a discharge current is generated. In fig. 2, the influence of noise on the detection current signal I is small, and the peak to peak value of the discharge current is large, which is clear. This is considered to be because: the inflow of noise from the actuator 7 into the current detection unit 81 can be suppressed by the insulating unit 6, and the outflow of discharge current flowing through the object 1 to the actuator 7 can be suppressed by the insulating unit 6. This can increase the S/N ratio of the discharge current detected by the current detection unit 81. Therefore, the plasma discharge state can be detected with high accuracy by a simple configuration.
For reference, fig. 3 is a diagram showing an example of waveforms of output voltage and detection current signals in a case where the actuator 7 and the table 5 are not insulated. In this case, the noise has a large influence on the detection current signal I, and the peak to peak value of the discharge current is small and unclear, as shown in the B region, for example. This deteriorates the S/N ratio of the discharge current.
The noise from the actuator 7 includes noise generated when the actuator 7 is driven, and noise based on electromagnetic waves received by the actuator 7 from the power supply unit 4. The plasma processing apparatus 10 of the present embodiment processes the object 1 to be processed by plasma discharge at atmospheric pressure. In the plasma discharge under the atmospheric pressure, since the power supply unit 4 applies a high-voltage and high-frequency output voltage to the voltage-applied electrode 2, noise is likely to be generated by the electromagnetic wave received by the actuator 7 from the power supply unit 4, but the insulating unit 6 can suppress the noise from flowing into the current detection unit 81.
In the present embodiment, the counter electrode is the object 1 to be processed. Thus, in the plasma processing apparatus 10 which performs the plasma processing by the direct method, the plasma discharge state can be detected with high accuracy by a simple configuration.
Further, since the actuator 7 is grounded via the second line L2, noise generated by the actuator 7 is absorbed by the grounding, and the flow of noise into the current detection unit 81 can be further suppressed.
Further, since the first line L1 is not connected to the second line L2 that grounds the actuator 7, it is possible to suppress noise from the ground from flowing into the current detection unit 81.
Further, since the current detection unit 81 and the table 5 are connected by the third wire L3, it is not necessary to connect the current detection unit 81 and the object 1 to be processed by a wire, and the processing steps can be simplified.
< 3. Process for treating object to be treated
Next, an example of the processing step of the object 1 to be processed will be described. Fig. 4 is a plan view showing an example of a process for treating the object 1. In fig. 4, the Y-axis direction indicates a direction in which the object 1 is conveyed by the actuator 7, the Z-axis direction indicates a vertical direction, and the X-axis direction indicates a direction orthogonal to the Y-axis direction and the Z-axis direction.
First, in step ST1, the object 1 to be processed is placed on the table 5. Here, the object 1 to be treated is a member having a cylindrical shape, for example, and has a circular ring surface as an upper surface, i.e., a surface to be treated. That is, the circular ring surface is the opposing side electrode surface 11.
The object 1 to be processed placed on the table 5 is conveyed to one side in the Y-axis direction by the actuator 7. Then, in step ST2, the height of the surface to be processed of the object 1 is measured by the displacement meter 15. At this time, the movement of the object 1 in the Y-axis direction is controlled by the actuator 7, and the movement of the displacement meter 15 in the X-axis direction is controlled. This enables the height of the torus, which is the surface to be processed, to be measured.
Next, the object 1 is conveyed to one side in the Y-axis direction by the actuator 7. Then, in step ST3, the plasma generated by the voltage-applied electrode 2 to which the voltage has been applied is used to perform the plasma processing on the surface to be processed of the object 1. Specifically, the movement of the object 1 in the Y-axis direction is controlled by the actuator 7, and the movement of the voltage-applied electrode 2 in the X-axis direction is controlled. At this time, since the movement of the voltage-applied electrode 2 in the Z-axis direction is controlled based on the measurement result in step ST2, the gap between the voltage-applied electrode 2 and the surface to be processed is controlled to be constant in the circumferential direction of the torus.
Then, the object 1 is conveyed to one side in the Y axis direction by the actuator 7, and the object 1 is detached from the table 5 and carried out in step ST 4.
The sharing of the three axial directions with respect to the relative movement of the object 1 to be treated, the displacement meter 15, and the voltage-applied electrode 2 by the actuator 7 and the mechanism for moving the displacement meter 15 and the voltage-applied electrode 2 may be arbitrary. For example, the displacement meter 15 and the voltage-applied electrode 2 may be fixed, and the actuator 7 may move the object 1 in three axial directions. Alternatively, the object 1 may be fixed, and the displacement meter 15 may be moved in two axial directions, and the voltage-applied electrodes 2 may be moved in three axial directions. In this case, the actuator moves the voltage-application electrode 2. That is, the actuator 7 moves the voltage-applied electrode 2 and the object 1 relatively.
< 4. determination processing by the determination section >
The determination unit 82 can perform various determination processes based on the detection result of the current detection unit 81. An example of the determination process will be described below.
For example, the determination unit 82 may compare the detected current value detected by the current detection unit 81 with a first threshold value and a second threshold value higher than the first threshold value. In this case, if the detected current value is equal to or greater than the first threshold value and equal to or less than the second threshold value, it is determined as a normal discharge state, if the detected current value is lower than the first threshold value, it is determined as a non-discharge state, and if the detected current value is higher than the second threshold value, it is determined as an abnormal discharge state. Further, the detection current value is, for example, a peak to peak value of the detection current signal.
The abnormal discharge state is a state in which arc discharge is generated due to dielectric breakdown of the dielectric portion 3 or mixing of foreign matter into the gap S1.
Further, determination unit 82 may determine whether or not the level of the detected current value decreases with time. In this case, the determination unit 82 may also give a warning to prompt replacement of the voltage-applied electrode 2, for example, using a display unit not shown.
That is, the plasma processing apparatus 10 includes the determination unit 82, and the determination unit 82 determines whether or not the plasma discharge is in the normal state based on the detection result of the current detection unit 81. This makes it possible to accurately determine whether or not the plasma discharge is in a normal state.
The determination unit 82 detects a temporal change in the current value detected by the current detection unit 81. Thereby enabling various warnings.
< 5. second embodiment >
Fig. 5 is a diagram schematically showing the overall configuration of the plasma processing apparatus 101 according to the second embodiment.
The plasma processing apparatus 101 is different from the plasma processing apparatus 10 of the first embodiment in that: the fourth line L4 connected to the table 5 and having the current detection unit 81 disposed in the middle, the fifth line L5 connected to the actuator 7, and the sixth line L6 connected to the second output terminal 42 are all grounded.
< 6. third embodiment >
Fig. 6 is a diagram schematically showing the overall configuration of a plasma processing apparatus 102 according to the third embodiment.
The plasma processing apparatus 102 is different from the plasma processing apparatus 10 of the first embodiment in that: the actuator 7 is not grounded and is in a floating state. When the noise generated from the actuator 7 is small, the insulating portion 6 can sufficiently suppress the noise flowing into the current detection portion 81 even in the configuration of the plasma processing apparatus 102.
< 7. fourth embodiment >
Fig. 7 is a diagram schematically showing the overall configuration of a plasma processing apparatus 103 according to the fourth embodiment.
The plasma processing apparatus 103 includes a voltage-applied electrode 20, a dielectric portion 30, a power supply portion 40, a counter electrode 50, an insulating portion 60, an actuator 70, and a signal processing box 80.
The voltage-applied electrode 20 is an electrode to which an output voltage outputted from the first output terminal 401 of the power supply unit 40 is applied, and is configured, for example, in a columnar shape extending in the vertical direction, that is, in the axial direction. The counter electrode 50 is an electrode facing the voltage-applied electrode 20 in a radial direction with respect to the axial direction, and is configured as a cylindrical body surrounding the voltage-applied electrode 20 on the outer side in the radial direction, for example.
The dielectric portion 30 is disposed on the opposing-side electrode surface 201, which is the outer peripheral surface of the voltage-applied electrode 20, has a cylindrical shape, and is disposed between the opposing electrode 50 and the voltage-applied electrode 20. Thereby, a cylindrical gap S2 is formed between the dielectric portion 30 and the counter electrode 50.
The counter electrode 50 is connected to the second output terminal 402 of the power supply unit 40 via a seventh line L7. The signal processing box 80 houses a current detection unit 801 and a determination unit 802. The current detection unit 801 is disposed in the middle of the seventh line L7.
The object to be processed 90 is disposed below the voltage-application electrode 20. The processing gas is guided from above to the slit S2, and a high-voltage and high-frequency output voltage is applied to the voltage-applying electrode 20 by the power supply unit 40, whereby dielectric barrier discharge is generated in the slit S2 under atmospheric pressure, and plasma is generated in the slit S2. The generated plasma is guided to the surface to be processed of the object to be processed 90, and the surface to be processed is subjected to plasma processing. That is, the plasma processing apparatus 103 of the present embodiment performs the plasma processing in a remote manner.
The insulating portion 60 electrically insulates the counter electrode 50 from the actuator 70. The actuator 70 moves the voltage-applied electrode 20, the dielectric portion 30, and the counter electrode 50 relative to the object 90 to be processed. The actuator 70 may move the object to be processed 90. That is, the actuator 70 moves the voltage-applied electrode and the object to be processed relatively. The actuator 70 is grounded.
When discharge occurs in the slit S2, the discharge current flowing through the counter electrode 50 is detected by the current detection unit 801. At this time, the insulating portion 60 suppresses the discharge current from flowing out to the actuator 70. In addition, the insulating portion 60 can suppress the noise from the actuator from flowing into the current detection portion 801. This can increase the S/N ratio of the discharge current detected by current detection unit 801.
The dielectric portion 30 may be provided on the opposite-side electrode surface 501 of the opposite electrode 50 instead of the opposite-side electrode surface 201 provided on the voltage-applied electrode 20, and may be provided on both the opposite-side electrode surface 201 and the opposite-side electrode surface 501. That is, the dielectric portion 30 is disposed on the opposing side electrode surface of at least one of the voltage-applied electrode 20 and the opposing electrode 50. Thus, in the dielectric barrier discharge method, even when arc discharge occurs due to dielectric breakdown of the dielectric portion 30 or mixing of foreign matter into the discharge space, it is possible to detect abnormal discharge with high accuracy.
< 8. other embodiments
While the embodiments of the present invention have been described above, the embodiments can be variously modified within the scope of the gist of the present invention.
Industrial applicability
The present invention can be used for various plasma processing of an object to be processed.
Claims (9)
1. A plasma processing apparatus includes a voltage-applied electrode to which an output voltage outputted from a power supply unit is applied, and processes an object to be processed by plasma generated between the voltage-applied electrode and a counter electrode opposed to the voltage-applied electrode,
the plasma processing apparatus is characterized by comprising:
an actuator for moving the voltage-applied electrode and the object to be processed relative to each other;
an insulating section disposed between the counter electrode and the actuator; and
and a current detection unit that detects a current flowing through the counter electrode.
2. The plasma processing apparatus according to claim 1,
the counter electrode is the object to be processed.
3. The plasma processing apparatus according to claim 1 or 2,
the actuator is grounded.
4. The plasma processing apparatus according to claim 3,
the power supply unit includes: a first output terminal for applying the output voltage to the voltage application electrode; and a second output terminal different from the first output terminal,
the current detection unit is disposed on a first line that connects the counter electrode and the second output terminal,
the first wire is not connected to a second wire that grounds the actuator.
5. The plasma processing apparatus according to claim 2,
further comprises a table on which the object to be processed is placed,
the insulating part is arranged between the worktable and the actuator,
the current detection unit is connected to the table via a third wire.
6. The plasma processing apparatus according to any one of claims 1 to 5, wherein the object to be processed is processed by plasma discharge at atmospheric pressure.
7. The plasma processing apparatus according to claim 6,
a dielectric portion is disposed on an opposing side electrode surface of at least one of the voltage application electrode and the opposing electrode.
8. The plasma processing apparatus according to any one of claims 1 to 7,
the plasma discharge detection device further includes a determination unit that determines whether or not the plasma discharge is in a normal state based on a detection result of the current detection unit.
9. The plasma processing apparatus according to claim 8,
the determination unit detects a change with time of a detected current value of the current detection unit.
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| KR102635502B1 (en) * | 2020-12-23 | 2024-02-07 | 광운대학교 산학협력단 | Supersonic arc plasma generation system |
| JP7386275B2 (en) | 2022-02-18 | 2023-11-24 | 日本特殊陶業株式会社 | Solution processing equipment and solution processing method |
| JP7386308B1 (en) | 2022-10-31 | 2023-11-24 | 日本特殊陶業株式会社 | Plasma irradiation device and plasma irradiation method |
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| JPH11224795A (en) * | 1998-02-10 | 1999-08-17 | Shin Seiki:Kk | Method and apparatus for generating plasma, plasma-applied surface treatment method and gas treatment method |
| JP2006286950A (en) * | 2005-03-31 | 2006-10-19 | Toyota Motor Corp | Method and device for surface processing |
| JP2009064618A (en) * | 2007-09-05 | 2009-03-26 | Sharp Corp | Plasma process device |
| JP2009135253A (en) * | 2007-11-30 | 2009-06-18 | Panasonic Corp | Plasma treating device, and plasma treating method |
| CN102497115A (en) * | 2011-12-09 | 2012-06-13 | 桂林电子科技大学 | Control method of normal-pressure low-temperature plasma power supply and power supply device |
| KR20170047935A (en) * | 2015-10-26 | 2017-05-08 | 한국과학기술원 | Dual frequency power supply and atomspheric pressure plasma generator using the same, method thereof |
| CN105484011A (en) * | 2015-11-19 | 2016-04-13 | 大连理工大学 | Apparatus and method for improving hydrophilicity of aramid fiber by using homogeneous atmospheric-pressure discharge |
| JP2018123711A (en) * | 2017-01-30 | 2018-08-09 | ダイハツ工業株式会社 | Pm accumulation detection device |
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| JP7059969B2 (en) | 2022-04-26 |
| JP2020145038A (en) | 2020-09-10 |
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