CN111668365A - Isolation structure applied to current sensor and current sensor - Google Patents
Isolation structure applied to current sensor and current sensor Download PDFInfo
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- CN111668365A CN111668365A CN202010530254.XA CN202010530254A CN111668365A CN 111668365 A CN111668365 A CN 111668365A CN 202010530254 A CN202010530254 A CN 202010530254A CN 111668365 A CN111668365 A CN 111668365A
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- layer
- current sensor
- isolation
- isolation structure
- magnetic field
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/202—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
Abstract
The invention discloses an isolation structure applied to a current sensor and the current sensor, wherein the isolation structure sequentially comprises the following components from bottom to top: the current conductor layer, the insulating medium layer and the magnetic field induction circuit layer; the insulating medium layer comprises: the current sensing circuit comprises a first bonding layer, a second bonding layer and an enhanced insulating safety isolation layer, wherein the first bonding layer is bonded to the current conductor layer, the second bonding layer is bonded to the magnetic field sensing circuit layer, and the enhanced insulating safety isolation layer is arranged between the first bonding layer and the second bonding layer; according to the invention, the insulating medium layer in the isolation structure is replaced, so that the insulating medium layer can meet the requirement of safety isolation performance and simultaneously provide stronger supporting force.
Description
Technical Field
The invention belongs to the field of micro-electronic machinery manufacturing, and particularly relates to an isolation structure applied to a current sensor and the current sensor.
Background
The current sensor is a detection device which can sense the information of the current to be detected and convert the sensed information into an electric signal meeting certain standards or other information in required forms according to a certain rule for output so as to meet the requirements of information transmission, processing, storage, display, recording, control and the like.
As shown in fig. 1, the conventional current sensor structure includes: the magnetic sensor comprises a metal frame 1, an isolation structure 2 electrically connected with the metal frame 1, and a Hall sensor 3 which is arranged right above the isolation structure and has a magnetic induction function; the metal frame 1 is generally made of a metal material based on bare copper.
The isolation structure sequentially comprises from bottom to top: a current conductor layer 21, an insulating medium layer 22, an adhesive layer 23 and an induction circuit layer 24; the adhesive layer is typically a glue with an adhesive effect. Referring to fig. 2, a conventional insulating dielectric layer 22 has a double-layered tape structure, each of which is generally composed of a polyimide film 22a and an adhesive film 22 b; therefore, the existing isolation structure can realize that the current conductor generates an electric field through large current to be sensed by the magnetic induction circuit, and simultaneously, the purpose of electrical isolation between the current conductor and the magnetic induction circuit is achieved.
However, the isolation performance of the isolation structure of the prior art, such as withstand voltage and surge, depends on the quality and the number of layers of the polyimide film of the insulating dielectric layer, which is affected by technical limitations; namely: in order to ensure the isolation performance, the thickness of the insulating dielectric layer needs to reach a certain thickness.
As shown in fig. 2, the insulating medium layer in the prior art uses a double-layer adhesive tape structure, and in the process of temperature change, the current sensor may be subjected to an excessive stress, which causes warpage of the magnetic induction circuit, and further, in the use process, the sensitivity of the magnetic field induction circuit may be shifted, which affects the performance of the current sensor.
Disclosure of Invention
The invention aims to provide an isolation structure applied to a current sensor and the current sensor;
in order to achieve one of the above objects, an embodiment of the present invention provides an isolation structure applied to a current sensor, the isolation structure including, in order from bottom to top: the current conductor layer, the insulating medium layer and the magnetic field induction circuit layer;
the insulating medium layer comprises: the current sensor comprises a first bonding layer, a second bonding layer and an enhanced insulation safety isolation layer, wherein the first bonding layer is bonded to the current conductor layer, the second bonding layer is bonded to the magnetic field induction circuit layer, and the enhanced insulation safety isolation layer is arranged between the first bonding layer and the second bonding layer.
As a further improvement of an embodiment of the present invention, the enhanced insulating safety barrier layer includes: a silicon-based wafer disposed proximate the first bonding layer and an insulating film disposed over the silicon-based wafer.
As a further improvement of an embodiment of the present invention, the silicon-based wafer and the magnetic field induction circuit layer have the same thermal expansion coefficient.
As a further improvement of an embodiment of the present invention, the reinforced insulating safety barrier is a glass plate.
As a further improvement of an embodiment of the present invention, a difference between the thermal expansion coefficient of the glass and the thermal expansion coefficient of the magnetic field sensing circuit layer is smaller than a preset thermal expansion coefficient threshold value.
In order to achieve the above object, according to another aspect of the present invention, there is provided a current sensor including: the metal frame is electrically connected with the metal frame, the isolation structure is arranged as above, and the Hall sensor is arranged in cooperation with the isolation structure.
As a further improvement of an embodiment of the present invention, the hall sensor is embedded in the magnetic field sensing circuit layer, is arranged close to the insulating medium layer, and is located in an electric field concentration region of the current conductor layer.
As a further improvement of an embodiment of the present invention, the current conductor layer includes: the frame comprises a semicircular first partition and a second partition, wherein the second partition is connected with the first partition and extends to an outer frame;
in the stacking direction of the isolation structures, the projection of the first subarea is completely mapped in the insulating medium layer, and a distance difference is formed between the edge of the first subarea and the adjacent edge of the insulating medium layer.
As a further improvement of an embodiment of the present invention, in the stacking direction of the isolation structures, the projection of the hall sensor is completely mapped in the first partition.
As a further improvement of an embodiment of the present invention, in the stacking direction of the isolation structures, the center of the hall sensor overlaps with the center of the semicircular structure of the first partition.
Compared with the prior art, the isolation structure applied to the current sensor and the current sensor provided by the invention have the advantages that the insulating medium layer in the isolation structure is replaced, so that the insulating medium layer can meet the requirement of safety isolation performance, meanwhile, stronger supporting force is provided, the influence of stress on the isolation structure in the temperature change process is effectively reduced, the warping of a magnetic field induction circuit layer caused by the stress is avoided, and the performance of the current sensor with the isolation structure is improved.
Drawings
FIG. 1 is a schematic diagram of a prior art current sensor;
FIG. 2 is a schematic structural diagram of the insulating dielectric layer in FIG. 1;
fig. 3 is a schematic structural diagram of an isolation structure provided in the first embodiment of the present invention;
FIG. 4 is a schematic structural diagram of an isolation structure provided in a second embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a current sensor provided by the present invention;
FIG. 6 is a schematic view of a perspective structure of a current sensor provided by the present invention in another direction;
FIG. 7 is a schematic flow chart of a method for fabricating an isolation structure according to an embodiment of the present invention;
FIG. 8 is a schematic representation of the steps of the method of the invention shown in FIG. 7.
Detailed Description
The present invention will be described in detail below with reference to specific embodiments shown in the drawings. These embodiments are not intended to limit the present invention, and structural, methodological, or functional changes made by those skilled in the art according to these embodiments are included in the scope of the present invention.
As shown in fig. 3 and 4, an embodiment of the present invention provides an isolation structure applied to a current sensor, the isolation structure sequentially including, from bottom to top: a current conductor layer 10, an insulating dielectric layer 20 and a magnetic field induction circuit layer 30; the insulating medium layer 20 includes: the first adhesive layer 21 is adhered to the current conductor layer 10, the second adhesive layer 22 is adhered to the magnetic field induction circuit layer 30, and the reinforced insulation safety isolation layer 23 is arranged between the first adhesive layer 21 and the second adhesive layer 22.
The first adhesive layer 21 is used for connecting the insulating medium layer 20 and the current conductor layer 10; the second adhesive layer 22 is used for connecting the insulating medium layer 20 and the magnetic field induction circuit layer 30.
Specifically, as shown in fig. 3, the enhanced insulation safety isolation layer 23 in the isolation structure applied to the current sensor according to the first embodiment of the present invention includes: a silicon-based wafer 231 disposed adjacent to the first adhesive layer 21, and an insulating film 232 disposed on the silicon-based wafer 231.
Preferably, the material of the insulating film 232 is a material medium similar to polyimide or silicon dioxide, which can provide a safety isolation requirement for enhanced insulation meeting the UL60950-1 standard.
Preferably, the silicon-based wafer 231 of the present invention can provide a larger mechanical supporting force for the magnetic field induction circuit.
In the specific implementation process of the present invention, the silicon-based wafer 231 and the magnetic field induction circuit layer 30 are both made of silicon-based materials, and preferably, the silicon-based wafer 231 and the magnetic field induction circuit layer 30 have the same thermal expansion coefficient; the same thermal expansion coefficient can reduce the internal stress of the magnetic field induction circuit, and can improve the sensitivity drift problem.
In one embodiment of the present invention, the thermal expansion coefficients of the silicon-based wafer 231 and the magnetic field induction circuit layer 30 are both 2.62 × 10^ 10(－6)/℃。
Specifically, as shown in fig. 4, the enhanced insulating safety isolation layer 23 in the isolation structure applied to the current sensor according to the second embodiment of the present invention is a glass plate.
The glass plate meets the safety isolation requirement of UL60950-1 standard on enhanced insulation; meanwhile, the magnetic field induction circuit can be provided with larger mechanical supporting force.
Preferably, the difference between the thermal expansion coefficient of the glass and the thermal expansion coefficient of the magnetic field sensing circuit layer 30 is smaller than a predetermined thermal expansion coefficient threshold.
The predetermined thermal expansion coefficient threshold can be set as a fixed constant value according to the requirement, in the preferred embodiment of the present invention, the glass plate has a thermal expansion coefficient similar to that of the magnetic field sensing circuit layer 30, i.e. the predetermined thermal expansion coefficient threshold is set to a very small value close to 0, in the specific example of the present invention, the thermal expansion coefficient of the magnetic field sensing circuit layer 30 is 2.62 × 10^ 10(－6)/° c; similar thermal expansion coefficients reduce the internal stress of the magnetic field sensing circuit and also ameliorate the sensitivity drift problem.
It should be noted that the above description of the isolation structure from top to bottom is only for clearly showing the relative position relationship of each dielectric layer, in other embodiments of the present invention, other dielectric layers may be added between each dielectric layer of the present invention, and on the basis of the present invention, the technical solution of adding other dielectric layers on the basis of the dielectric layers of the present invention is within the protection scope of the present invention.
Referring to fig. 5, a current sensor according to an embodiment of the present invention includes: the metal frame 40, the isolation structure electrically connected to the metal frame 40 and described above, and the hall sensor 50 disposed in cooperation with the isolation structure.
The metal frame 40 is generally made of a metal material based on bare copper.
Preferably, the hall sensor 50 is embedded in the magnetic field sensing circuit layer 30, arranged close to the insulating medium layer 20, and located in the electric field concentration region of the current conductor layer 10; in this way, the signal-to-noise ratio can be reduced while the hall sensor 50 senses a stronger magnetic signal.
In a specific example of the present invention, as shown in fig. 6, the current conductor layer 10 includes: a semicircular first section 11, and a second section 12 connecting the first section 11 and extending to the metal frame 40; in the stacking direction of the isolation structures, the projection of the first partition 11 is completely mapped in the insulating medium layer 20, and a distance difference is formed between an edge of the first partition 11 and an adjacent edge of the insulating medium layer 20.
Thus, the voltage withstanding performance of the magnetic field sensing circuit layer 30 is improved by the distance difference between the current conductor layer 10 and the insulating medium layer 20, so that the insulating medium layer 20 blocks the high voltage caused by the current conductor layer 10, thereby preventing the high voltage of the current conductor layer 10 from breaking down the magnetic field sensing circuit layer 30 from the side.
Preferably, the size of the distance difference formed between the insulating medium layer 20 and the edge of the first partition 11 of the current conductor layer 10 can be specifically adjusted according to the structural characteristics of the product; in one specific example of the invention, the distance difference is at least 400 microns.
In order to keep the hall sensor 50 located at the electric field concentration region of the current conductor layer 10; preferably, the projection of the hall sensor 50 is completely mapped in the first partition 11 in the stacking direction of the isolation structures.
Further, in the stacking direction of the isolation structures, the center of the hall sensor 50 overlaps with the center of the semicircular structure of the first partition 11.
Fig. 5 and 6 of the present invention are not drawn to the same scale.
Referring to fig. 7 and 8, in an embodiment of the present invention, a method for manufacturing the isolation structure shown in fig. 3 is provided, where the method includes:
s1, providing a silicon-based wafer 231;
s2, performing a spin coating of polyimide on the silicon-based wafer 231, and then curing the polyimide to form the insulating film 232 with high mechanical strength;
s3, cutting the product obtained in the step S2 to obtain small particles with a fixed area;
s4, adhering the single insulating medium layer 20 to the current conductor layer 10 by glue using a vacuum nozzle, wherein the glue in the step forms a first adhesive layer 21;
and adhering the magnetic field sensing circuit layer 30 to the dielectric layer 20 by glue using a vacuum nozzle, the glue in this step forming the second adhesive layer 22.
It can be clearly understood by those skilled in the art that, for convenience and brevity of description, only the process for preparing the isolation structure applied to the current sensor shown in fig. 3 is described above, and with reference to the above preparation method, the process for preparing the isolation structure shown in fig. 4 can be derived, and further details are not described herein.
In summary, according to the isolation structure applied to the current sensor and the current sensor provided by the invention, the insulating medium layer in the isolation structure is replaced, so that the insulating medium layer can provide a stronger supporting force while meeting the requirement of safety isolation performance, the influence of stress on the isolation structure in the temperature change process is effectively reduced, the warping of the magnetic field induction circuit layer caused by the stress is avoided, and the performance of the current sensor with the isolation structure is improved.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (10)
1. An isolation structure applied to a current sensor is characterized in that,
the isolation structure sequentially comprises from bottom to top: the current conductor layer, the insulating medium layer and the magnetic field induction circuit layer;
the insulating medium layer comprises: the current sensor comprises a first bonding layer, a second bonding layer and an enhanced insulation safety isolation layer, wherein the first bonding layer is bonded to the current conductor layer, the second bonding layer is bonded to the magnetic field induction circuit layer, and the enhanced insulation safety isolation layer is arranged between the first bonding layer and the second bonding layer.
2. The isolation structure applied to a current sensor of claim 1, wherein the enhanced insulation safety isolation layer comprises: a silicon-based wafer disposed proximate the first bonding layer and an insulating film disposed over the silicon-based wafer.
3. The isolation structure applied to the current sensor as claimed in claim 2, wherein the silicon-based wafer and the magnetic field induction circuit layer have the same thermal expansion coefficient.
4. The isolation structure applied to the current sensor as claimed in claim 1, wherein the reinforced insulating safety isolation layer is a glass plate.
5. The isolation structure applied to the current sensor as claimed in claim 4, wherein the difference between the thermal expansion coefficient of the glass and the thermal expansion coefficient of the magnetic field sensing circuit layer is less than a preset thermal expansion coefficient threshold value.
6. A current sensor, comprising: the metal frame, electrically connect the metal frame, and the isolating structure of any one of claims 1 to 5, and the hall sensor that sets up with the isolating structure cooperation.
7. The current sensor of claim 6, wherein the Hall sensor is embedded in the magnetic field sensing circuit layer and disposed proximate to the dielectric layer and in an electric field concentration region of the current conductor layer.
8. The current sensor of claim 6, wherein the current conductor layer comprises: a semicircular first partition and a second partition connecting the first partition and extending to an outer frame;
in the stacking direction of the isolation structures, the projection of the first subarea is completely mapped in the insulating medium layer, and a distance difference is formed between the edge of the first subarea and the adjacent edge of the insulating medium layer.
9. The current sensor of claim 8, wherein a projection of the hall sensor is mapped entirely within the first zone in an isolation structure stacking direction.
10. The current sensor of claim 8, wherein a center of the hall sensor overlaps a center of the semicircular structure of the first segment in a stacking direction of the isolation structures.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010530254.XA CN111668365A (en) | 2020-06-11 | 2020-06-11 | Isolation structure applied to current sensor and current sensor |
| PCT/CN2020/100062 WO2021248597A1 (en) | 2020-06-11 | 2020-07-03 | Isolation structure applied to current sensor, and current sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010530254.XA CN111668365A (en) | 2020-06-11 | 2020-06-11 | Isolation structure applied to current sensor and current sensor |
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| Publication Number | Publication Date |
|---|---|
| CN111668365A true CN111668365A (en) | 2020-09-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010530254.XA Pending CN111668365A (en) | 2020-06-11 | 2020-06-11 | Isolation structure applied to current sensor and current sensor |
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| CN (1) | CN111668365A (en) |
| WO (1) | WO2021248597A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623411A (en) * | 2011-01-17 | 2012-08-01 | 英飞凌科技股份有限公司 | Semiconductor devices having insulating substrates and methods of formation thereof |
| WO2013015976A1 (en) * | 2011-07-22 | 2013-01-31 | Allegro Microsystems, Inc. | Reinforced isolation for current sensor with magnetic field transducer |
| EP3327449A1 (en) * | 2016-11-29 | 2018-05-30 | Allegro Microsystems, LLC | Systems and methods for integrated shielding in a current sensor |
| CN108226627A (en) * | 2016-12-12 | 2018-06-29 | 梅莱克塞斯技术股份有限公司 | Current sensor and the method for manufacturing current sensor |
| CN109541280A (en) * | 2018-12-26 | 2019-03-29 | 新纳传感系统有限公司 | Integrated current sensors |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003172750A (en) * | 2001-09-26 | 2003-06-20 | Sanken Electric Co Ltd | Current detection device |
| US9013890B2 (en) * | 2010-03-26 | 2015-04-21 | Infineon Technologies Ag | Semiconductor packages and methods for producing the same |
| US9000761B2 (en) * | 2012-01-19 | 2015-04-07 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Hall-effect sensor isolator |
-
2020
- 2020-06-11 CN CN202010530254.XA patent/CN111668365A/en active Pending
- 2020-07-03 WO PCT/CN2020/100062 patent/WO2021248597A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623411A (en) * | 2011-01-17 | 2012-08-01 | 英飞凌科技股份有限公司 | Semiconductor devices having insulating substrates and methods of formation thereof |
| WO2013015976A1 (en) * | 2011-07-22 | 2013-01-31 | Allegro Microsystems, Inc. | Reinforced isolation for current sensor with magnetic field transducer |
| EP3327449A1 (en) * | 2016-11-29 | 2018-05-30 | Allegro Microsystems, LLC | Systems and methods for integrated shielding in a current sensor |
| CN108226627A (en) * | 2016-12-12 | 2018-06-29 | 梅莱克塞斯技术股份有限公司 | Current sensor and the method for manufacturing current sensor |
| CN109541280A (en) * | 2018-12-26 | 2019-03-29 | 新纳传感系统有限公司 | Integrated current sensors |
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| WO2021248597A1 (en) | 2021-12-16 |
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