CN111668329B - Photoelectric detector - Google Patents
Photoelectric detector Download PDFInfo
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- CN111668329B CN111668329B CN202010575950.2A CN202010575950A CN111668329B CN 111668329 B CN111668329 B CN 111668329B CN 202010575950 A CN202010575950 A CN 202010575950A CN 111668329 B CN111668329 B CN 111668329B
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- 230000031700 light absorption Effects 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 230000008878 coupling Effects 0.000 claims abstract description 14
- 238000010168 coupling process Methods 0.000 claims abstract description 14
- 238000005859 coupling reaction Methods 0.000 claims abstract description 14
- 230000000694 effects Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 11
- 238000004891 communication Methods 0.000 abstract description 7
- 239000013307 optical fiber Substances 0.000 abstract description 7
- 238000013461 design Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
Abstract
A photoelectric detector relates to the field of photoelectric detectors. Comprises a light guide part, a light absorption section, a p-type semiconductor, an n-type semiconductor, a first electrode, a second electrode and a third electrode. The light guide portion is disposed between the p-type semiconductor and the n-type semiconductor, and the light absorbing section is attached to the light guide portion and disposed along an optical path direction of the light guide portion. The first electrode is connected to the p-type semiconductor in a conduction mode, the second electrode is connected to the n-type semiconductor in a conduction mode, and the third electrode is connected to the light absorption section in a conduction mode. The light absorption section is made of photoelectric effect material. Along the direction of the optical path, the length of the optical absorption section is (0.9n-0.5) - (1.1n-0.5) times of the evanescent wave coupling period. The optical fiber communication system has the advantages of simple structure, higher saturation current, higher bandwidth and higher responsivity, obviously improved overall performance, and positive significance for further improving the overall working performance of the optical fiber communication system.
Description
Technical Field
The invention relates to the field of photoelectric detectors, in particular to a photoelectric detector.
Background
In the practical application process of the existing photoelectric detector, the saturation current, the bandwidth and the responsivity of the existing photoelectric detector are difficult to further improve, certain limit is formed on the performance of the photoelectric detector, and the improvement of the working performance of the existing photoelectric detector is limited to a certain extent for the whole optical fiber communication system.
In view of this, the present application is specifically made.
Disclosure of Invention
The invention aims to provide a photoelectric detector which is simple in structure, has larger saturation current, higher bandwidth and higher responsivity, obviously improves the overall performance, and has positive significance for further improving the overall working performance of an optical fiber communication system.
The embodiment of the invention is realized by the following steps:
a photodetector, comprising: a light guide portion, a light absorbing section, a p-type semiconductor, an n-type semiconductor, a first electrode, a second electrode, and a third electrode. The light guide portion is disposed between the p-type semiconductor and the n-type semiconductor, and the light absorbing section is attached to the light guide portion and disposed along an optical path direction of the light guide portion. The first electrode is connected to the p-type semiconductor in a conduction mode, the second electrode is connected to the n-type semiconductor in a conduction mode, and the third electrode is connected to the light absorption section in a conduction mode. The light absorption section is made of photoelectric effect material. Along the direction of the optical path, the length of the optical absorption section is (0.9n-0.5) - (1.1n-0.5) times of the evanescent wave coupling period. Wherein n is a positive integer.
Furthermore, along the direction of the optical path, the length of the optical absorption section is (0.97n-0.5) - (1.03n-0.5) times of the evanescent wave coupling period.
Further, along the direction of the optical path, the length of the optical absorption section is (n-0.5) times of the coupling period of the evanescent wave.
Further, both the light guide and the light absorbing section are equal in width.
Furthermore, the first electrode and the bonding area of the p-type semiconductor are rectangular and arranged along the direction of the light path. The second electrode is rectangular with the bonding region of the n-type semiconductor and arranged along the optical path direction. The third electrode and the bonding area of the light absorption section are rectangular and arranged along the direction of the light path.
Further, the thickness of the light absorption section is 1.5-2.5 times of the thickness of the light guide part.
Further, both ends of the light guide portion are provided with light incident interfaces.
Further, the light guide part is a silicon waveguide, and the light absorption section is germanium.
Further, the p-type semiconductor is p-type silicon and the n-type semiconductor is n-type silicon.
The embodiment of the invention has the beneficial effects that:
the inventor of the present application has found that: for light absorption sections with different lengths, the light field superposition has different forms, namely the light field superposition condition is related to the length of the light absorption section.
If the period length of the optical field distribution is L. The length of the light absorption section is integral multiple nL (n is a positive integer) of the evanescent wave period, and the incident light field is overlapped at the maximum value of the light absorption section distribution, so that the light field distribution is too concentrated, the area of a light field distribution area is reduced, namely the effective absorption area of the light absorption section is reduced, and the performance of the device is reduced.
And when the length of the light absorption section is odd multiple (n +1/2) L (n is a positive integer) of a half coupling period, the strongest part of incident light at one end of the incident light is superposed with the weakest part of the incident light at the other end of the incident light, so that the light field distribution of the whole absorption region is more uniform, and the generated carrier distribution is more uniform, therefore, the integral performance is better, the saturation current is larger, the bandwidth is larger, and the responsivity is higher.
The inventor researches to obtain: combining material homogeneity, interface light effect, average light conduction and light absorption capacity, under comprehensive evaluation, the length of a light absorption section is (0.9n-0.5) - (1.1n-0.5) times (n is a positive integer) of the evanescent wave coupling period. Through the design, the overall performance of the photoelectric detector can be effectively improved, and the photoelectric detector has larger saturation current, higher bandwidth and higher responsivity.
In general, the photoelectric detector provided by the embodiment of the invention has a simple structure, has larger saturation current, higher bandwidth and higher responsivity, obviously improves the overall performance, and has positive significance for further improving the overall working performance of an optical fiber communication system.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a photodetector according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the optical field distribution when the length of the light absorption section is not optimized;
fig. 3 is a schematic diagram of the optical field distribution after the optical absorption segment length is optimized.
Icon: a photodetector 1000; a light guide section 100; a light absorbing section 200; a p-type semiconductor 300; an n-type semiconductor 400; a first electrode 500; a second electrode 600; a third electrode 700.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
The terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Examples
Referring to fig. 1, the present embodiment provides a photo detector 1000, where the photo detector 1000 includes: light guide 100, light absorbing segment 200, p-type semiconductor 300, n-type semiconductor 400, first electrode 500, second electrode 600, and third electrode 700.
The light guide portion 100 is provided between the p-type semiconductor 300 and the n-type semiconductor 400, and the light absorbing section 200 is attached to the light guide portion 100 and provided along the optical path direction of the light guide portion 100. The first electrode 500 is electrically connected to the p-type semiconductor 300, the second electrode 600 is electrically connected to the n-type semiconductor 400, and the third electrode 700 is electrically connected to the light absorbing section 200. The light absorbing segment 200 is made of a photoelectric effect material.
Along the optical path direction, the length of the light absorption section 200 is (0.9n-0.5) - (1.1n-0.5) times of the evanescent coupling period. Wherein n is a positive integer.
In the present embodiment, both ends of the light guide part 100 are provided with light incident interfaces.
The inventor of the present application has found that: for different lengths of the light absorbing section 200, the light field superposition may have different morphologies, i.e., the light field superposition is related to the length of the light absorbing section 200.
The two extreme cases are shown in fig. 2 and 3. If the period length of the optical field distribution is L. When the length of the light absorption section 200 makes the light field appear as shown in fig. 2, the length of the light absorption section 200 is an integral multiple nL (n is a positive integer) of the evanescent wave period, and the incident light field is superposed at the maximum value of the light absorption section 200 distribution, which causes the light field distribution to be too concentrated, and reduces the area of the light field distribution region, that is, the effective absorption area of the light absorption section 200, thereby reducing the performance of the device.
When the light field is as shown in fig. 3 due to the length of the absorption region set by us, the length of the light absorption section 200 is odd times (n +1/2) L (n is a positive integer) of a half coupling period, and the strongest part of the incident light at one end of the incident light is overlapped with the weakest part of the incident light at the other end, so that the light field distribution of the whole absorption region is more uniform, the generated carrier distribution is more uniform, and therefore, the overall performance is better, the saturation current is larger, the bandwidth is larger, and the responsivity is higher.
The inventor researches to obtain: combining material homogeneity, interface light effect, average light conduction and light absorption capacity, under comprehensive evaluation, the length of the light absorption section 200 is (0.9n-0.5) - (1.1n-0.5) times (n is a positive integer) of the evanescent wave coupling period. Through the design, the overall performance of the photoelectric detector 1000 can be effectively improved, and the photoelectric detector has larger saturation current, higher bandwidth and higher responsivity.
In general, the photodetector 1000 has a simple structure, has a larger saturation current, a higher bandwidth and a higher responsivity, and has a significantly improved overall performance, thereby having a positive significance in further improving the overall working performance of the optical fiber communication system.
In this embodiment, the light guide 100 is a silicon waveguide, the light absorbing section 200 is germanium, the p-type semiconductor 300 is p-type silicon, and the n-type semiconductor 400 is n-type silicon. For a specific material, along the optical path direction, the length of the light absorption section 200 can be further optimized to be (0.97n-0.5) - (1.03n-0.5) times of the evanescent coupling period, so as to further improve the overall effect. Wherein, the length of the light absorption section 200 can be (n-0.5) times of the evanescent coupling period, so as to achieve better use effect.
Further, both the light guide 100 and the light absorbing section 200 have the same width (note that the width direction is shown as P in fig. 1, and the length direction is shown as Q in fig. 1). Through this design, can promote the light absorption effect of light absorption section 200 effectively, eliminate the interface difference of light guide portion 100 and light absorption section 200 two in the width direction, reduce the loss in light field to ensure the abundant absorption in light field, further promote the responsivity to the light field.
In the present embodiment, the first electrode 500 is rectangular to the bonding region of the p-type semiconductor 300 and is disposed along the optical path direction. The second electrode 600 is rectangular to the bonding region of the n-type semiconductor 400 and is disposed along the optical path direction. The third electrode 700 is rectangular with the bonding region of the light absorption section 200 and is disposed along the light path direction. Through this design, reduced first electrode 500, second electrode 600 and third electrode 700 to the influence of light field, reduced the light absorption, had positive effect to promoting the responsivity.
Further, the thickness of the light absorption section 200 is 1.5 to 2.5 times the thickness of the light guide part 100. In the present embodiment, the thickness of the light absorbing section 200 is 2 times the thickness of the light guide 100. By this design, it is ensured that the light absorbing section 200 can sufficiently absorb the light field entering therein, avoiding penetration or scattering.
In conclusion, the photodetector 1000 has a simple structure, has a larger saturation current, a higher bandwidth and a higher responsivity, obviously improves the overall performance, and has a positive significance for further improving the overall working performance of the optical fiber communication system.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A photodetector, comprising: a light guide portion, a light absorbing section, a p-type semiconductor, an n-type semiconductor, a first electrode, a second electrode, and a third electrode; the light guide part is arranged between the p-type semiconductor and the n-type semiconductor, and the light absorption section is attached to the light guide part and arranged along the light path direction of the light guide part; the first electrode is connected with the p-type semiconductor in a conduction mode, the second electrode is connected with the n-type semiconductor in a conduction mode, and the third electrode is connected with the light absorption section in a conduction mode; the light absorption section is made of photoelectric effect materials; along the direction of the light path, the length of the light absorption section is (0.9n-0.5) - (1.1n-0.5) times of the evanescent wave coupling period; wherein n is a positive integer.
2. The photodetector of claim 1, wherein the length of the light absorbing section in the optical path direction is (0.97n-0.5) to (1.03n-0.5) times the evanescent coupling period.
3. The photodetector of claim 2, wherein the length of the light absorbing segment along the optical path is (n-0.5) times the evanescent coupling period.
4. The photodetector of claim 1, wherein the light guide portion and the light absorbing segment are both equal in width.
5. The photodetector of claim 1, wherein the first electrode is rectangular with the bonding region of the p-type semiconductor and is disposed along the optical path direction; the second electrode and the bonding area of the n-type semiconductor are rectangular and arranged along the direction of the light path; the third electrode and the bonding area of the light absorption section are rectangular and arranged along the direction of the light path.
6. The photodetector of claim 1, wherein the thickness of the light absorbing section is 1.5 to 2.5 times the thickness of the light guide.
7. The photodetector according to claim 1, wherein both ends of the light guide portion are provided with light incident interfaces.
8. The photodetector of claim 1, wherein the light guide is a silicon waveguide and the light absorbing segment is germanium.
9. The photodetector of claim 1, wherein the p-type semiconductor is p-type silicon and the n-type semiconductor is n-type silicon.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010575950.2A CN111668329B (en) | 2020-06-22 | 2020-06-22 | Photoelectric detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010575950.2A CN111668329B (en) | 2020-06-22 | 2020-06-22 | Photoelectric detector |
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| Publication Number | Publication Date |
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| CN111668329A CN111668329A (en) | 2020-09-15 |
| CN111668329B true CN111668329B (en) | 2022-04-05 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0779009A (en) * | 1993-09-08 | 1995-03-20 | Mitsubishi Electric Corp | Semiconductor photodetector |
| JP2001024211A (en) * | 1999-07-12 | 2001-01-26 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light receiving element |
| JP2003174186A (en) * | 2001-12-06 | 2003-06-20 | Yokogawa Electric Corp | Semiconductor light receiving element |
| CN101114755A (en) * | 2006-07-28 | 2008-01-30 | 冲电气工业株式会社 | Carrier-suppressed optical pulse train generation method and mode-locked semiconductor laser diode for realizing this method |
| CN101452930A (en) * | 2007-12-05 | 2009-06-10 | 株式会社东芝 | Semiconductor device and manufacturing method thereof |
| CN201332218Y (en) * | 2008-11-17 | 2009-10-21 | 潘锡光 | Dual-wavelength semiconductor laser |
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2020
- 2020-06-22 CN CN202010575950.2A patent/CN111668329B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0779009A (en) * | 1993-09-08 | 1995-03-20 | Mitsubishi Electric Corp | Semiconductor photodetector |
| JP2001024211A (en) * | 1999-07-12 | 2001-01-26 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light receiving element |
| JP2003174186A (en) * | 2001-12-06 | 2003-06-20 | Yokogawa Electric Corp | Semiconductor light receiving element |
| CN101114755A (en) * | 2006-07-28 | 2008-01-30 | 冲电气工业株式会社 | Carrier-suppressed optical pulse train generation method and mode-locked semiconductor laser diode for realizing this method |
| CN101452930A (en) * | 2007-12-05 | 2009-06-10 | 株式会社东芝 | Semiconductor device and manufacturing method thereof |
| CN201332218Y (en) * | 2008-11-17 | 2009-10-21 | 潘锡光 | Dual-wavelength semiconductor laser |
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