CN111668128B - Hydrogen ion implantation dose detection method and hydrogen ion implantation dose detection system - Google Patents
Hydrogen ion implantation dose detection method and hydrogen ion implantation dose detection system Download PDFInfo
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- CN111668128B CN111668128B CN202010384551.8A CN202010384551A CN111668128B CN 111668128 B CN111668128 B CN 111668128B CN 202010384551 A CN202010384551 A CN 202010384551A CN 111668128 B CN111668128 B CN 111668128B
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Abstract
A hydrogen ion implantation dose detection method and a hydrogen ion implantation dose detection system can realize detection of hydrogen ion implantation dose variation, thereby improving the quality of film transfer and improving the preparation yield of semiconductor devices. The hydrogen ion implantation dose detection method comprises the following steps: providing a substrate, wherein hydrogen ions are implanted into the substrate to form a hydrogen ion implantation layer; and detecting the thickness change of the hydrogen ion implantation layer, and judging that the implantation dosage of the hydrogen ions changes when the thickness change of the hydrogen ion implantation layer exceeds a preset value.
Description
Technical Field
The invention relates to the field of semiconductor device production, in particular to a hydrogen ion implantation dose detection method and a hydrogen ion implantation dose detection system.
Background
Hydrogen implantation is widely used for thin film transfer, such as the fabrication of silicon on insulator by smart cut processes. Silicon on insulator has been increasingly used as a new semiconductor material, and generally includes a top single crystal silicon layer, an insulating layer, and a bottom substrate.
The hydrogen ion implantation dose is important for the transfer layer quality, but the change in the hydrogen ion implantation dose is difficult to detect. Variations in the dose of hydrogen ion implantation can severely affect the quality of film transfer and thus the yield of semiconductor device fabrication.
Disclosure of Invention
The invention aims to provide a hydrogen ion implantation dose detection method and a hydrogen ion implantation dose detection system, which can realize detection of hydrogen ion implantation dose change, thereby improving the quality of film transfer and the preparation yield of semiconductor devices.
In order to solve the above technical problem, the following provides a method for detecting a hydrogen ion implantation dose, comprising the steps of: providing a substrate, wherein hydrogen ions are implanted into the substrate to form a hydrogen ion implantation layer; and detecting the thickness change of the hydrogen ion implantation layer, and judging that the implantation dosage of the hydrogen ions changes when the thickness change of the hydrogen ion implantation layer exceeds a preset value.
Optionally, an SPC monitor is used to monitor the thickness variation of the hydrogen ion implanted layer.
Optionally, the method further comprises the following steps: and when the implantation dosage of the hydrogen ions is judged to be changed, an alarm is sent out to inform a user that the implantation dosage of the current hydrogen ions is changed.
Optionally, the thickness of the hydrogen ion implanted layer is measured by an optical measuring instrument.
Optionally, the optical measurement instrument includes an ultraviolet-visible spectrophotometer, and the elliptical polarization spectrum measurement mode of the ultraviolet-visible spectrophotometer is used to perform elliptical polarization spectrum measurement on the thickness of the hydrogen ion implantation layer.
Optionally, when hydrogen ions are implanted into the substrate, the method includes the following steps: forming a protective film on the surface of the substrate; and implanting hydrogen ions into the substrate from the upper surface of the protective film.
Optionally, the protective film includes an oxide film, and the oxide film is formed by at least one of atomic layer deposition, chemical vapor deposition, or physical vapor deposition.
In order to solve the above technical problem, the following provides a hydrogen ion implantation dose detection system, including: a hydrogen ion implanted layer thickness measuring device for measuring the thickness of a hydrogen ion implanted layer formed after hydrogen ions are implanted into the substrate; and the controller is connected to the hydrogen ion implantation layer thickness measuring device and used for judging whether the thickness change of the hydrogen ion implantation layer exceeds a preset value according to the thickness measured by the hydrogen ion implantation layer thickness measuring device.
Optionally, the controller includes: and the SPC monitor is connected to the hydrogen ion implantation layer thickness measuring device and used for monitoring the thickness change of the hydrogen ion implantation layer.
Optionally, the hydrogen ion implantation layer thickness measuring device includes an optical measuring instrument.
Optionally, the optical measurement instrument includes an ultraviolet-visible spectrophotometer, the ultraviolet-visible spectrophotometer includes a light source emitting module and a light source receiving module, the light source emitting module is a broadband light source emitting module, and the wavelength range of the emitted light is 180nm to 1000nm.
Optionally, the method further includes: and the alarm is connected to the controller and used for giving an alarm when the controller judges that the thickness change of the hydrogen ion implantation layer exceeds a preset value and informing a user that the implantation dosage of the current hydrogen ions is changed.
According to the hydrogen ion implantation dose detection method and the hydrogen ion implantation dose detection system, the characteristic that the thickness of the hydrogen ion implantation layer is very sensitive to the implantation dose of the hydrogen ions is utilized, whether the implantation dose of the hydrogen ions is changed or not is obtained by measuring the thickness change of the hydrogen ion implantation layer, the change of the implantation dose of the hydrogen ions can be accurately detected, the quality of film transfer is improved, and the preparation yield of semiconductor devices is also improved.
Drawings
Fig. 1 is a schematic flow chart illustrating a step of a hydrogen ion implantation dose detection method according to an embodiment of the present invention.
Fig. 2 is a schematic sectional side view of the substrate on which the hydrogen ion implantation layer and the protective film are formed in one embodiment of the present invention.
Fig. 3 is a schematic connection diagram of a hydrogen ion implantation dose detection system according to an embodiment of the present invention.
Detailed Description
It was found that the thickness of the hydrogen ion implanted layer is very sensitive to the dose of hydrogen ion implantation.
The hydrogen ion implantation dose detection method and the hydrogen ion implantation dose detection system according to the present invention will be described in detail with reference to the accompanying drawings and the following detailed description.
Referring to fig. 1 and fig. 2, fig. 1 is a schematic flow chart illustrating a step of a hydrogen ion implantation dose detection method according to an embodiment of the present invention, and fig. 2 is a schematic side sectional view illustrating a substrate having a hydrogen ion implantation layer and a protection film formed thereon according to an embodiment of the present invention.
In the embodiment shown in fig. 1, a method for detecting a hydrogen ion implantation dose is provided, which comprises the following steps: s11 providing a substrate 201, wherein hydrogen ions are implanted into the substrate 201 to form a hydrogen ion implanted layer 202; s12 detects a change in the thickness of the hydrogen ion implanted layer 202, and determines that the implantation dose of the hydrogen ions has changed when the change in the thickness of the hydrogen ion implanted layer 202 exceeds a preset value.
In the embodiment shown in fig. 1, by using the characteristic that the thickness of the hydrogen ion implantation layer 202 is very sensitive to the implantation dose of the hydrogen ions, whether the implantation dose of the hydrogen ions changes is known by measuring the thickness change of the hydrogen ion implantation layer 202, the change of the implantation dose of the hydrogen ions can be accurately detected, the quality of film transfer is improved, and the preparation yield of the semiconductor device is also improved.
In the embodiment shown in fig. 1, the thickness variation of the hydrogen ion implanted layer is monitored using an SPC monitor. SPC (Statistical Process Control) is a Process Control tool that relies on mathematical Statistical methods. The method analyzes and evaluates the production process, timely discovers the sign of the systematic factors according to the feedback information, and takes measures to eliminate the influence, so that the process is maintained in a controlled state only influenced by the random factors, and the purpose of controlling the quality is achieved.
When the SPC monitor monitors the thickness detected by the hydrogen ion implantation layer thickness measurement device 301, as long as the thickness variation of the hydrogen ion implantation layer 202 exceeds the preset value, the data monitored by the SPC monitor may be abnormal. The user can adjust the implantation dosage of the hydrogen ions in time according to the abnormality so as to restore the implantation of the hydrogen ions to normal. In one embodiment, the specific value of the preset value can be set as desired.
In one embodiment, the method further comprises the following steps: and when the implantation dosage of the hydrogen ions is judged to be changed, an alarm is sent out to inform a user that the implantation dosage of the current hydrogen ions is changed.
In one embodiment, the thickness of the hydrogen ion implanted layer 202 is measured using an optical measuring instrument. Specifically, the measurement of the thickness of the hydrogen ion implanted layer 202 is achieved by reflection and absorption of light. In the embodiment shown in fig. 2, the hydrogen ion implanted layer 202 is formed on the top surface of the substrate 201, and the thickness of the hydrogen ion implanted layer 202 can be obtained by analyzing the reflection and absorption of light at two places, which are different from the reflection and absorption of incident light by the hydrogen ion implanted layer 202 and the reflection and absorption of incident light by the substrate 201 below the hydrogen ion implanted layer 202.
In one embodiment, the optical measurement instrument comprises an ultraviolet-visible spectrophotometer, and the ellipsometry measurement mode of the ultraviolet-visible spectrophotometer is used for performing the ellipsometry measurement on the thickness of the hydrogen ion implantation layer 202. In one embodiment, the thickness of the hydrogen ion implanted layer 202 may be measured using a KT UV1280 ultraviolet visible spectrophotometer (Spectroscopic ellipsometry) mode. In practice, the measurement of the thickness of the hydrogen ion implantation layer 202 can also be directly realized by using an ellipsometer.
In one embodiment, the method for implanting hydrogen ions into the substrate 201 comprises the following steps: forming a protective film 203 on the surface of the substrate 201; hydrogen ions are implanted into the substrate 201 from the upper surface of the protective film 203. Referring to fig. 2, a substrate 201 with a protective film 203 is formed, and hydrogen ions are injected into the substrate 201 to form the hydrogen ion implanted layer 202. Thus, when hydrogen ion implantation is performed, the upper surface of the substrate 201 is not corroded, and the upper surface of the substrate 201 is not affected.
In one embodiment, the protective film 203 comprises an oxide film. In the specific embodiment shown in fig. 2, the oxide film comprises a silicon oxide film. In another embodiment, the protection film 203 may be a nitride film, and may be provided according to actual needs.
In one embodiment, the oxide film is formed using at least one of atomic layer deposition, chemical vapor deposition, or physical vapor deposition. In the embodiment shown in fig. 2, the oxide film is formed on the surface of the substrate 201 by atomic layer deposition.
Referring to fig. 1, fig. 2 and fig. 3, in this embodiment, a hydrogen ion implantation dose detection system is further provided, which includes: a hydrogen ion implantation layer thickness measuring device 301 for measuring the thickness of a hydrogen ion implantation layer 202 formed after hydrogen ions are implanted into the substrate 201; a controller 302, connected to the hydrogen ion implantation layer thickness measuring device 301, for determining whether the thickness variation of the hydrogen ion implantation layer 202 exceeds a preset value according to the thickness measured by the hydrogen ion implantation layer thickness measuring device 301.
In the embodiment shown in fig. 1, by using the characteristic that the thickness of the hydrogen ion implanted layer 202 is very sensitive to the implanted dose of hydrogen ions, whether the implanted dose of hydrogen ions changes is known by measuring the thickness change of the hydrogen ion implanted layer 202, the change of the implanted dose of hydrogen ions can be accurately detected, the quality of film transfer is improved, and the yield of semiconductor device fabrication is also improved.
In one embodiment, the controller comprises: an SPC monitor connected to the hydrogen ion implantation layer thickness measuring device 301 for monitoring a change in the thickness of the hydrogen ion implantation layer. When the SPC monitor monitors the thickness detected by the hydrogen ion implantation layer thickness measurement device 301, if the thickness variation of the hydrogen ion implantation layer 202 exceeds a preset value, the data monitored by the SPC monitor may be abnormal. The user can adjust the implantation dosage of the hydrogen ions in time according to the abnormality so as to restore the implantation of the hydrogen ions to normal.
In one embodiment, the specific value of the preset value can be set as desired.
In practice, the thickness variation of the hydrogen ion implantation layer can be monitored by other monitors.
In the process, the SPC monitor monitors the thickness of the hydrogen ion implantation layer 202 in a plurality of substrates in the production flow, and does not monitor the thickness of different hydrogen ion implantation layers 202 in the same substrate.
In one embodiment, the hydrogen ion implantation layer thickness measuring device 301 comprises an optical measuring instrument. In a specific embodiment, the optical measuring instrument includes an ultraviolet-visible spectrophotometer, which includes a light source emitting module and a light source receiving module, and the light source emitting module is a broadband light source emitting module, and the wavelength range of the emitted light is 180nm to 1000nm.
In one embodiment, the uv-vis spectrophotometer comprises an ellipsometry mode for emitting ellipsoids toward the substrate 201 and receiving ellipsoids reflected by the substrate 201 to measure the thickness of the hydrogen ion implanted layer 202 in the substrate 201.
In one embodiment, the controller 302 includes at least one of a microcontroller, a single-chip microcomputer, and an editable logic device. In actual use, the specific structure of the controller 302 can be set as required.
In a more preferred embodiment, the hydrogen ion implantation dosage detection system further includes an alarm 303, connected to the controller 302, for sending an alarm when the controller 302 determines that the thickness variation of the hydrogen ion implantation layer 202 exceeds a preset value, and informing a user that the current implantation dosage of the hydrogen ion is changed, so that the user can adjust the relevant parameters of the hydrogen ion implantation in time to prevent the subsequent hydrogen ion implantation dosage from being continuously mistaken.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A method for detecting the implantation dose of hydrogen ions is characterized by comprising the following steps:
providing a substrate, wherein hydrogen ions are implanted into the substrate to form a hydrogen ion implantation layer; and detecting the thickness change of the hydrogen ion implantation layer, monitoring the thickness change of the hydrogen ion implantation layer by adopting an SPC (supervisory control Unit), and judging that the implantation dosage of the hydrogen ions changes when the thickness change of the hydrogen ion implantation layer exceeds a preset value.
2. The method according to claim 1, further comprising the steps of:
and when the implantation dosage of the hydrogen ions is judged to be changed, an alarm is sent out to inform a user that the implantation dosage of the current hydrogen ions is changed.
3. The method according to claim 1, wherein the thickness of the hydrogen ion implanted layer is measured by an optical measuring instrument.
4. The method according to claim 3, wherein the optical measurement instrument comprises an ultraviolet-visible spectrophotometer, and the ellipsometry measurement mode of the ultraviolet-visible spectrophotometer is used to perform the ellipsometry measurement of the thickness of the hydrogen ion implantation layer.
5. The method for detecting the implantation dose of hydrogen ions according to claim 1, comprising the steps of, when implanting hydrogen ions into the substrate:
forming a protective film on the surface of the substrate;
and implanting hydrogen ions into the substrate from the upper surface of the protective film.
6. The method according to claim 5, wherein the protective film comprises an oxide film, and the oxide film is formed by at least one of atomic layer deposition, chemical vapor deposition, or physical vapor deposition.
7. A system for detecting a dose of hydrogen ion implantation, comprising:
a hydrogen ion implanted layer thickness measuring device for measuring the thickness of a hydrogen ion implanted layer formed after hydrogen ions are implanted into the substrate;
the controller is connected to the hydrogen ion implantation layer thickness measuring device and used for judging whether the thickness change of the hydrogen ion implantation layer exceeds a preset value according to the thickness measured by the hydrogen ion implantation layer thickness measuring device; the controller includes: and the SPC monitor is connected to the hydrogen ion implantation layer thickness measuring device and used for monitoring the thickness change of the hydrogen ion implantation layer.
8. The system according to claim 7, wherein the hydrogen ion implantation layer thickness measuring device comprises an optical measuring instrument.
9. The system of claim 8, wherein the optical measurement device comprises an ultraviolet-visible spectrophotometer, the ultraviolet-visible spectrophotometer comprises a light source emitting module and a light source receiving module, the light source emitting module is a broadband light source emitting module, and the wavelength of the emitted light is in a range of 180nm to 1000nm.
10. The system of claim 7, further comprising: and the alarm is connected to the controller and used for giving an alarm when the controller judges that the thickness change of the hydrogen ion implantation layer exceeds a preset value and informing a user that the implantation dosage of the current hydrogen ions is changed.
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| JP2008004794A (en) * | 2006-06-23 | 2008-01-10 | Yamaha Corp | Ion implantation dose monitor |
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| JP2956627B2 (en) * | 1996-12-16 | 1999-10-04 | 日本電気株式会社 | Impurity concentration analysis method |
| TW336341B (en) * | 1997-07-29 | 1998-07-11 | United Microelectronics Corp | Method for monitoring abnormality on energy or dosage of high energy ion implantation |
| US6639228B2 (en) * | 2001-08-28 | 2003-10-28 | Promos Technologies Inc. | Method for molecular nitrogen implantation dosage monitoring |
| US20030073255A1 (en) * | 2001-10-12 | 2003-04-17 | Sundar Narayanan | Novel self monitoring process for ultra thin gate oxidation |
| KR20030057171A (en) * | 2001-12-28 | 2003-07-04 | 동부전자 주식회사 | method for measuring ion implantation energy on a silicon wafer |
| KR20050008222A (en) * | 2003-07-14 | 2005-01-21 | 삼성전자주식회사 | Apparatus for measuring ion dose of a wafer |
| US7615386B2 (en) * | 2006-12-29 | 2009-11-10 | Texas Instruments Incorporated | Thick oxide film for wafer backside prior to metalization loop |
| CN103441086B (en) * | 2013-08-29 | 2016-01-06 | 京东方科技集团股份有限公司 | Detect the method for photoresist layer ion implantation blocking capability |
| CN105097584A (en) * | 2014-05-15 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Detection method for ion implantation dosage |
| CN104091767B (en) * | 2014-06-25 | 2016-11-02 | 京东方科技集团股份有限公司 | The monitoring method of ion implanting |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4807994A (en) * | 1987-11-19 | 1989-02-28 | Varian Associates, Inc. | Method of mapping ion implant dose uniformity |
| JP2008004794A (en) * | 2006-06-23 | 2008-01-10 | Yamaha Corp | Ion implantation dose monitor |
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