TW336341B - Method for monitoring abnormality on energy or dosage of high energy ion implantation - Google Patents

Method for monitoring abnormality on energy or dosage of high energy ion implantation

Info

Publication number
TW336341B
TW336341B TW086110823A TW86110823A TW336341B TW 336341 B TW336341 B TW 336341B TW 086110823 A TW086110823 A TW 086110823A TW 86110823 A TW86110823 A TW 86110823A TW 336341 B TW336341 B TW 336341B
Authority
TW
Taiwan
Prior art keywords
ion implantation
dosage
high energy
silicon dioxide
dioxide layer
Prior art date
Application number
TW086110823A
Other languages
Chinese (zh)
Inventor
Ren-Tsorng Lin
Kuen-Juh Chen
Jyh-Horng Chen
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW086110823A priority Critical patent/TW336341B/en
Application granted granted Critical
Publication of TW336341B publication Critical patent/TW336341B/en

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A method for monitoring abnormality of energy or dosage of high energy ion implantation, which at least comprises: providing a semiconductor wafer as a test wafer; forming a silicon dioxide layer on the test wafer; undergoing high energy ion implantation; etching off a portion of the silicon dioxide layer and retaining a portion of the silicon dioxide layer with a thickness; measuring the thickness of the remaining silicon dioxide layer; and using a thermal-probe to measure a thermal wave signal.
TW086110823A 1997-07-29 1997-07-29 Method for monitoring abnormality on energy or dosage of high energy ion implantation TW336341B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086110823A TW336341B (en) 1997-07-29 1997-07-29 Method for monitoring abnormality on energy or dosage of high energy ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086110823A TW336341B (en) 1997-07-29 1997-07-29 Method for monitoring abnormality on energy or dosage of high energy ion implantation

Publications (1)

Publication Number Publication Date
TW336341B true TW336341B (en) 1998-07-11

Family

ID=58263128

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086110823A TW336341B (en) 1997-07-29 1997-07-29 Method for monitoring abnormality on energy or dosage of high energy ion implantation

Country Status (1)

Country Link
TW (1) TW336341B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111668128A (en) * 2020-05-08 2020-09-15 上海新傲科技股份有限公司 Hydrogen ion implantation dose detection method and hydrogen ion implantation dose detection system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111668128A (en) * 2020-05-08 2020-09-15 上海新傲科技股份有限公司 Hydrogen ion implantation dose detection method and hydrogen ion implantation dose detection system

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Legal Events

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