TW336341B - Method for monitoring abnormality on energy or dosage of high energy ion implantation - Google Patents
Method for monitoring abnormality on energy or dosage of high energy ion implantationInfo
- Publication number
- TW336341B TW336341B TW086110823A TW86110823A TW336341B TW 336341 B TW336341 B TW 336341B TW 086110823 A TW086110823 A TW 086110823A TW 86110823 A TW86110823 A TW 86110823A TW 336341 B TW336341 B TW 336341B
- Authority
- TW
- Taiwan
- Prior art keywords
- ion implantation
- dosage
- high energy
- silicon dioxide
- dioxide layer
- Prior art date
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A method for monitoring abnormality of energy or dosage of high energy ion implantation, which at least comprises: providing a semiconductor wafer as a test wafer; forming a silicon dioxide layer on the test wafer; undergoing high energy ion implantation; etching off a portion of the silicon dioxide layer and retaining a portion of the silicon dioxide layer with a thickness; measuring the thickness of the remaining silicon dioxide layer; and using a thermal-probe to measure a thermal wave signal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086110823A TW336341B (en) | 1997-07-29 | 1997-07-29 | Method for monitoring abnormality on energy or dosage of high energy ion implantation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086110823A TW336341B (en) | 1997-07-29 | 1997-07-29 | Method for monitoring abnormality on energy or dosage of high energy ion implantation |
Publications (1)
Publication Number | Publication Date |
---|---|
TW336341B true TW336341B (en) | 1998-07-11 |
Family
ID=58263128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086110823A TW336341B (en) | 1997-07-29 | 1997-07-29 | Method for monitoring abnormality on energy or dosage of high energy ion implantation |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW336341B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111668128A (en) * | 2020-05-08 | 2020-09-15 | 上海新傲科技股份有限公司 | Hydrogen ion implantation dose detection method and hydrogen ion implantation dose detection system |
-
1997
- 1997-07-29 TW TW086110823A patent/TW336341B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111668128A (en) * | 2020-05-08 | 2020-09-15 | 上海新傲科技股份有限公司 | Hydrogen ion implantation dose detection method and hydrogen ion implantation dose detection system |
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GD4A | Issue of patent certificate for granted invention patent |