CN111653557A - Paster type infrared receiving sensor - Google Patents
Paster type infrared receiving sensor Download PDFInfo
- Publication number
- CN111653557A CN111653557A CN202010528413.2A CN202010528413A CN111653557A CN 111653557 A CN111653557 A CN 111653557A CN 202010528413 A CN202010528413 A CN 202010528413A CN 111653557 A CN111653557 A CN 111653557A
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- Prior art keywords
- substrate
- receiving sensor
- electromagnetic shielding
- shielding cover
- operational amplification
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- 239000000758 substrate Substances 0.000 claims abstract description 34
- 230000003321 amplification Effects 0.000 claims abstract description 20
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 20
- 238000004806 packaging method and process Methods 0.000 claims abstract description 10
- 239000000084 colloidal system Substances 0.000 claims abstract description 8
- 238000000748 compression moulding Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 4
- 230000008569 process Effects 0.000 claims abstract description 4
- 239000008393 encapsulating agent Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 230000001788 irregular Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000012858 packaging process Methods 0.000 abstract description 3
- 238000003825 pressing Methods 0.000 abstract description 2
- 238000007723 die pressing method Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a patch type infrared receiving sensor, which comprises a substrate, a photosensitive diode, an operational amplification chip, an electromagnetic shielding cover and a packaging colloid, wherein the photosensitive diode and the operational amplification chip are fixed on the substrate; the electromagnetic shielding cover is fixed on the substrate, and the photosensitive diode and the operational amplification chip are arranged right below the electromagnetic shielding cover; the photosensitive diode, the operational amplification chip and the electromagnetic shielding cover are wrapped in the packaging colloid through an on-board compression molding process. The invention adopts a patch type design, applies an on-board mould pressing packaging process, sequentially fixes the chip and the electromagnetic shielding cover by using the substrate as a carrier, and has the advantages of small volume, interference resistance, high use and production efficiency and high space utilization rate.
Description
Technical Field
The invention relates to an infrared receiving sensor, in particular to a patch type infrared receiving sensor.
Background
Infrared reception is mainly the conversion of infrared light signals into electrical signals. When the receiving sensor is irradiated by external infrared light, the change of infrared light strength affects the magnitude of the electric signal, and the generated electric signal is in direct proportion to the applied light strength. The photoelectric sensor is mainly used as a light signal (photoelectric) sensor and applied to intelligent products such as intelligent houses, intelligent robots and the like and intelligent equipment of a human-computer interaction device. Along with the continuous miniaturization of the man-machine interaction intelligent equipment, the application environment is complicated, and further higher requirements are provided for the large volume, the anti-electromagnetic interference capability, the product reliability and the like of internal electronic components and photoelectric sensors. The traditional infrared receiving device mainly adopts TO packaging or LAMP packaging, uses a lead frame as a main structural unit, does not perform electromagnetic shielding on the periphery of a chip, and has poor anti-interference performance; in addition, severe external force impact such as bending and rib cutting exists in the production process, so that the yield is low; the finished product can not be subjected to surface pasting in use, and the use and production efficiency is low; when the integrated circuit board is used as a plug-in type device, the whole main body is vertical to the PCB circuit board, and the space utilization difficulty is increased.
In summary, the problems that the existing infrared receiving device is large in size, easy to be interfered by electromagnetic waves, incapable of being surface-mounted and the like due to the fact that the lead frame is used as a main structural unit are solved. The invention designs a patch type infrared receiving sensor.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a patch type infrared receiving sensor which is reasonable in design and easy to manufacture, adopts a patch type design, applies an on-board die pressing packaging process, and sequentially fixes a chip and an electromagnetic shielding cover by taking a substrate as a carrier.
In order to achieve the purpose, the invention is realized by the following technical scheme: a patch type infrared receiving sensor comprises a substrate, a photosensitive diode, an operational amplification chip, an electromagnetic shielding cover and a packaging colloid, wherein the photosensitive diode and the operational amplification chip are fixed on the substrate; the electromagnetic shielding cover is fixed on the substrate, and the photosensitive diode and the operational amplification chip are arranged right below the electromagnetic shielding cover; the photosensitive diode, the operational amplification chip and the electromagnetic shielding cover are wrapped in the packaging colloid through an on-board compression molding process.
Preferably, the front surface of the substrate is provided with three irregular circuits, the middle part of the substrate is used as a functional area, and two ends of the substrate can be used as pins and are connected with the back surface bonding pad through semicircular holes at two ends of the substrate;
preferably, the front surface of the substrate is provided with a rectangular mark and a triangular mark, the triangular mark is used as a pin identification mark, a grounding pin (line) is arranged between the triangular mark and the pin identification mark, a power supply pin (line) is arranged beside the triangular mark, and an output pin (line) is arranged beside the rectangular mark.
Preferably, the photodiode and the operational amplifier chip are fixed on the substrate by conductive silver paste and insulating paste, respectively.
Preferably, the electromagnetic shielding cover is connected to the substrate through a conductive adhesive, and a rectangular opening is formed in the upper portion of the electromagnetic shielding cover and corresponds to the photosensitive diode below the electromagnetic shielding cover.
Preferably, the rectangular openings in the magnetic shield correspond.
Preferably, the encapsulant and the lens are of an integrated structure, and the encapsulant has a filtering function on light wavelength and can filter wavelengths below 850 nm.
The invention has the beneficial effects that: the invention adopts a patch type design, applies an onboard die pressing packaging process, and sequentially fixes the chip and the electromagnetic shielding cover by using the substrate as a carrier. The problems that the size of the existing infrared receiving device is large, the device is easily interfered by electromagnetic waves, the device cannot be used in surface mounting and the like due to the fact that the existing infrared receiving device adopts the lead frame as a main structural unit are solved.
Drawings
The invention is described in detail below with reference to the drawings and the detailed description;
FIG. 1 is a schematic view of the overall structure of the present invention;
fig. 2 is an exploded view of the present invention.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
Referring to fig. 1-2, the following technical solutions are adopted in the present embodiment: a patch type infrared receiving sensor comprises a substrate 1, a photosensitive diode 2, an operational amplification chip 3, an electromagnetic shielding cover 4 and a packaging colloid 5, wherein the photosensitive diode 2 and the operational amplification chip 3 are fixed on the substrate 1, the photosensitive diode 2 is connected with the operational amplification chip 3 through a bonding wire 6, and a signal output electrode, a grounding electrode and a power supply electrode on the operational amplification chip 3 are respectively connected with an output pin 13, a grounding pin 14 and a power supply pin 15 on the substrate 1; the electromagnetic shielding cover 4 is fixed on the substrate 1, and the photosensitive diode 2 and the operational amplification chip 3 are arranged right below the electromagnetic shielding cover 4; the photosensitive diode 2, the operational amplification chip 3 and the electromagnetic shielding case 4 are wrapped in the packaging colloid 5 through an on-board compression molding process.
It is worth noting that the front surface of the substrate 1 is provided with three irregular circuits, the middle is used as a functional area, and two ends can be used as pins to be connected with the back surface bonding pad through the semicircular holes at the two ends of the substrate.
It should be noted that the front surface of the substrate 1 has a rectangular mark 11 and a triangular mark 12, the triangular mark 12 is used as a pin identification mark, a ground pin (line) 14 is arranged between the triangular mark 12, a power supply pin (line) 15 is arranged beside the triangular mark 12, and an output pin (line) 13 is arranged beside the rectangular mark 11.
It should be noted that the photodiode 2 and the operational amplifier chip 3 are respectively fixed on the substrate by conductive silver paste and insulating paste.
It is worth noting that the electromagnetic shielding cover 4 is connected on the substrate 1 through a conductive adhesive, and a rectangular opening is arranged above the electromagnetic shielding cover 4 and corresponds to the photodiode 2 below. Facilitating the passage of light therethrough towards the photodiode 2.
It should be noted that the encapsulant 5 has a circular-like lens 7 on top, which can receive infrared light within 120 ° and corresponds to the rectangular opening of the inner electromagnetic shield 4.
In addition, the encapsulant 5 and the lens 7 are of an integrated structure, and the encapsulant 5 has a filtering function on light wavelength and can filter wavelengths below 850 nm.
This embodiment reasonable in design, anti-interference is strong, adopts the paster type design, uses board to carry the mould pressing packaging technology, is the carrier through the base plate, fixes chip and electromagnetic shield cover in proper order, and is small, uses production efficiency height, and space utilization is high.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (7)
1. A patch type infrared receiving sensor is characterized by comprising a substrate (1), a photosensitive diode (2), an operational amplification chip (3), an electromagnetic shielding cover (4) and a packaging colloid (5), wherein the photosensitive diode (2) and the operational amplification chip (3) are fixed on the substrate (1), the photosensitive diode (2) is connected with the operational amplification chip (3) through a bonding wire (6), and a signal output electrode, a grounding electrode and a power supply electrode on the operational amplification chip (3) are respectively connected with an output pin (13), a grounding pin (14) and a power supply pin (15) on the substrate (1); the electromagnetic shielding cover (4) is fixed on the substrate (1), and the photosensitive diode (2) and the operational amplification chip (3) are arranged right below the electromagnetic shielding cover (4); the photosensitive diode (2), the operational amplification chip (3) and the electromagnetic shielding cover (4) are wrapped in the packaging colloid (5) through an onboard compression molding process.
2. A patch type infrared receiving sensor according to claim 1 characterized in that the front surface of the substrate (1) has three irregular lines, the middle is a functional area, and both ends are pins connected with the back pad through the semi-circular holes at both ends of the substrate.
3. A patch type infrared receiving sensor according to claim 1, characterized in that the front surface of the substrate (1) is provided with a rectangular mark (11) and a triangular mark (12), the triangular mark (12) is used as a pin identification mark, a ground pin (14) is arranged between the triangular mark (12), a power supply pin (15) is arranged beside the triangular mark (12), and an output pin (13) is arranged beside the rectangular mark (11).
4. A patch type infrared receiving sensor according to claim 1, characterized in that the photodiode (2) and the operational amplifier chip (3) are fixed on the substrate by means of conductive silver paste and insulating paste, respectively.
5. A patch type infrared receiving sensor according to claim 1, characterized in that the electromagnetic shield (4) is connected to the substrate (1) by means of a conductive adhesive, and a rectangular opening is provided above the electromagnetic shield (4) to correspond to the photodiode (2) below.
6. A patch type ir receiving sensor according to claim 1 wherein the top of the encapsulant (5) has a circular-like lens (7) with a light receiving angle of 120 ° corresponding to the rectangular opening in the inner shield (4).
7. A patch type infrared receiving sensor according to claim 1, characterized in that the encapsulant (5) and the lens (7) are of an integral structure, and the encapsulant (5) has a filtering function for light wavelength, so as to filter out wavelengths below 850 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010528413.2A CN111653557A (en) | 2020-06-11 | 2020-06-11 | Paster type infrared receiving sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010528413.2A CN111653557A (en) | 2020-06-11 | 2020-06-11 | Paster type infrared receiving sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111653557A true CN111653557A (en) | 2020-09-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010528413.2A Pending CN111653557A (en) | 2020-06-11 | 2020-06-11 | Paster type infrared receiving sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111653557A (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5763900A (en) * | 1996-12-05 | 1998-06-09 | Taiwan Liton Electronic Co. Ltd. | Infrared transceiver package |
| CN2807359Y (en) * | 2005-06-07 | 2006-08-16 | 佛山市国星光电科技有限公司 | Paster type integral infrared receiver |
| CN201222738Y (en) * | 2008-06-18 | 2009-04-15 | 深圳万润科技股份有限公司 | Patch type infrared receiving die set |
| CN204668299U (en) * | 2015-06-18 | 2015-09-23 | 厦门华联电子有限公司 | A kind of infrared receiving terminal |
| CN205845947U (en) * | 2016-06-03 | 2016-12-28 | 深圳市鸿利泰光电科技有限公司 | The patch type infrared of a kind of built-in shielding construction receives head |
| CN106935663A (en) * | 2017-02-24 | 2017-07-07 | 江苏欧密格光电科技股份有限公司 | A kind of paster infrared receiving terminal |
| CN108281395A (en) * | 2018-02-26 | 2018-07-13 | 苏州雷霆光电科技有限公司 | A kind of patch-type IRM high shielding constructions and its manufacture craft |
| CN208655660U (en) * | 2018-09-07 | 2019-03-26 | 深圳市惠利电子科技有限公司 | A kind of bipod patch type blood oxygen transducer receiving device |
| CN110416392A (en) * | 2019-07-30 | 2019-11-05 | 深圳市永裕光电有限公司 | A kind of 360 ° of light emitting diodes of encapsulation |
| CN210638817U (en) * | 2019-06-30 | 2020-05-29 | 德清兰德电子有限公司 | SMD infrared sensor |
-
2020
- 2020-06-11 CN CN202010528413.2A patent/CN111653557A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5763900A (en) * | 1996-12-05 | 1998-06-09 | Taiwan Liton Electronic Co. Ltd. | Infrared transceiver package |
| CN2807359Y (en) * | 2005-06-07 | 2006-08-16 | 佛山市国星光电科技有限公司 | Paster type integral infrared receiver |
| CN201222738Y (en) * | 2008-06-18 | 2009-04-15 | 深圳万润科技股份有限公司 | Patch type infrared receiving die set |
| CN204668299U (en) * | 2015-06-18 | 2015-09-23 | 厦门华联电子有限公司 | A kind of infrared receiving terminal |
| CN205845947U (en) * | 2016-06-03 | 2016-12-28 | 深圳市鸿利泰光电科技有限公司 | The patch type infrared of a kind of built-in shielding construction receives head |
| CN106935663A (en) * | 2017-02-24 | 2017-07-07 | 江苏欧密格光电科技股份有限公司 | A kind of paster infrared receiving terminal |
| CN108281395A (en) * | 2018-02-26 | 2018-07-13 | 苏州雷霆光电科技有限公司 | A kind of patch-type IRM high shielding constructions and its manufacture craft |
| CN208655660U (en) * | 2018-09-07 | 2019-03-26 | 深圳市惠利电子科技有限公司 | A kind of bipod patch type blood oxygen transducer receiving device |
| CN210638817U (en) * | 2019-06-30 | 2020-05-29 | 德清兰德电子有限公司 | SMD infrared sensor |
| CN110416392A (en) * | 2019-07-30 | 2019-11-05 | 深圳市永裕光电有限公司 | A kind of 360 ° of light emitting diodes of encapsulation |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
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Application publication date: 20200911 |