CN111635139A - PERC crystalline silicon solar cell, front main grid silver paste and glass powder thereof - Google Patents
PERC crystalline silicon solar cell, front main grid silver paste and glass powder thereof Download PDFInfo
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- CN111635139A CN111635139A CN202010489912.5A CN202010489912A CN111635139A CN 111635139 A CN111635139 A CN 111635139A CN 202010489912 A CN202010489912 A CN 202010489912A CN 111635139 A CN111635139 A CN 111635139A
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- 239000011521 glass Substances 0.000 title claims abstract description 91
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 239000000843 powder Substances 0.000 title claims abstract description 60
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 59
- 239000004332 silver Substances 0.000 title claims abstract description 59
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 22
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 22
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 22
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 20
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 39
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 17
- QDOXWKRWXJOMAK-UHFFFAOYSA-N chromium(III) oxide Inorganic materials O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 13
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 13
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 12
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 12
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 12
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 238000000227 grinding Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 12
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 11
- 239000002893 slag Substances 0.000 claims description 11
- 238000000498 ball milling Methods 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- 238000005303 weighing Methods 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 5
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000004744 fabric Substances 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 4
- 239000000156 glass melt Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 239000006060 molten glass Substances 0.000 claims description 4
- 238000010791 quenching Methods 0.000 claims description 4
- 230000000171 quenching effect Effects 0.000 claims description 4
- 238000007873 sieving Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000011230 binding agent Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 13
- 238000012360 testing method Methods 0.000 description 8
- 238000007639 printing Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
- C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Energy (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Glass Compositions (AREA)
Abstract
PERC crystalline silicon solar cell, front main grid silver paste and glass powder thereof, wherein the glass powder is combined with Bi2O3、SiO2、B2O3、PbO、CuO、TiO2、ZrO2、Al2O3、Cr2O3And R2O; the front main grid silver paste comprises: spherical silver powder, the glass powder of the scheme and a binder. The PERC crystalline silicon solar cell adopts screen printing to print front main grid silver paste on a monocrystalline silicon wafer to be used as a main grid electrode. The invention discloses a PERC crystalline silicon solar cellThe glass powder for the front main grid silver paste solves the problems of low welding pull-out force and low battery open circuit voltage of the front silver paste for the current PERC solar battery; meanwhile, the glass powder can provide higher welding adhesion force on the front surface of the silicon wafer, does not damage a PN junction of a battery, and does not influence the contact resistance performance of fine grid silver paste, so that the photoelectric conversion efficiency of the PERC solar cell and the reliability of a photovoltaic module are improved.
Description
Technical Field
The invention relates to the technical field of front main grid silver paste, in particular to a PERC crystalline silicon solar cell, front main grid silver paste and glass powder thereof.
Background
The front silver paste for the conventional PERC solar cell is used for printing on the front of a silicon wafer; the problems of low welding pull-out force and low battery open-circuit voltage exist after the battery product is prepared by the existing front silver paste, and the requirements of the PERC single crystal battery piece on improving the photoelectric conversion efficiency and the welding reliability of the battery component end can not be met.
Disclosure of Invention
The invention aims to provide glass powder for front main grid silver paste, which combines Bi2O3、SiO2、B2O3、PbO、CuO、TiO2、ZrO2、Al2O3、Cr2O3And R2O。
The invention also provides front main grid silver paste of the PERC crystalline silicon solar cell, which comprises the following components: spherical silver powder, glass powder and a binder.
The invention also provides a PERC crystalline silicon solar cell, which adopts screen printing to print front main grid silver paste on a monocrystalline silicon wafer as a front main grid electrode.
In order to achieve the purpose, the invention adopts the following technical scheme:
the glass powder for front main grid silver paste consists of Bi 30-60 wt%2O310-35% of SiO20.1-15% of B2O35 to 30 percent of PbO and 0.5 to 15 percent ofCuO of (2), 0.5-10% TiO20.1-6% of ZrO21-5% of Al2O30.5-5% of Cr2O3And 0.1-3% of R2O, wherein R2O is Li2O and Na2One or a combination of two of O.
Preferably, the particle size D50 of the glass powder is 0.2-2.5 μm.
Preferably, the glass frit has a softening point of 400-620 ℃.
Preferably, the preparation method of the glass powder comprises the following steps:
(1) weighing raw materials of the glass powder according to a proportion, and putting the raw materials into a mixer for mixing;
(2) putting the uniformly mixed raw materials into an alumina crucible, and then putting the crucible into a box-type resistance furnace; heating the resistance furnace to 1200-1400 ℃, melting at constant temperature, and preserving heat to obtain uniform glass melt;
(3) pouring the molten glass into a container filled with deionized water under the stirring state for quenching to obtain glass slag; putting the glass broken slag into a constant-temperature drying box, and drying;
(4) carrying out wet ball milling on the glass slag, and firstly adopting zirconia grinding medium balls with the diameter of 10-15 mm; then adopting zirconia grinding medium balls with the diameter of 1.0-3.0 mm; putting the glass material into a constant-temperature drying box, and drying for 5-10 hours;
(5) and sieving the glass material to obtain the glass powder.
The front main grid silver paste of the PERC crystalline silicon solar cell comprises the following components in percentage by mass: spherical silver powder, glass powder and adhesive;
the glass powder is the glass powder.
Preferably, the method comprises the following steps by mass percent: 65-90% of spherical silver powder, 1-5% of glass powder and 5-30% of adhesive.
Preferably, the preparation method of the front-side main gate silver paste comprises the following steps:
(S1) weighing the spherical silver powder, the glass powder and the adhesive, and stirring until the materials are uniform and wet;
(S2) grinding with a three-roll mill to a fineness of less than 7 μm;
(S3) filtering the slurry with a filter cloth.
A PERC crystalline silicon solar cell adopts screen printing to print front main grid silver paste on a monocrystalline silicon piece as a main grid electrode;
the front main grid silver paste is the front main grid silver paste.
The invention has the beneficial effects that:
1. the invention discloses glass powder for a front main grid silver paste of a PERC crystalline silicon solar cell and a preparation method thereof, solves the problems of lower welding pull-out force and lower cell open circuit voltage of the front silver paste for the PERC crystalline silicon solar cell at present, and can reduce the silver content of the front silver paste and the production cost of the crystalline silicon solar cell.
2. The glass powder can provide higher welding adhesion force on the front surface of the silicon wafer, meanwhile, the PN junction of the battery is not damaged, and the contact resistance performance of the fine grid silver paste is not influenced, so that the photoelectric conversion efficiency of the PERC solar battery piece and the reliability of a photovoltaic module are improved.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments.
The glass powder for front main grid silver paste consists of Bi 30-60 wt%2O310-35% of SiO20.1-15% of B2O35 to 30 percent of PbO, 0.5 to 15 percent of CuO and 0.5 to 10 percent of TiO20.1-6% of ZrO21-5% of Al2O30.5-5% of Cr2O3And 0.1-3% of R2O, wherein R2O is Li2O and Na2One or a combination of two of O.
The invention discloses glass powder for a front main grid silver paste of a PERC crystalline silicon solar cell and a preparation method thereof, which solve the problems of lower welding pull-out force and lower cell open circuit voltage of the front silver paste for the PERC crystalline silicon solar cell at present, and can reduce the silver content of the front silver paste and the production cost of the crystalline silicon solar cell; meanwhile, the glass powder can provide higher welding adhesion force on the front surface of the silicon wafer, meanwhile, the PN junction of the battery is not damaged, and the contact resistance performance of the fine grid silver paste is not influenced, so that the photoelectric conversion efficiency of the PERC solar cell and the reliability of a photovoltaic module are improved.
Preferably, the particle size D50 of the glass powder is 0.2-2.5 μm.
The particle size D50 of the glass powder is 0.2-2.5 μm, and Bi is contained in the glass powder by controlling the particle size of the glass powder2O3、SiO2、B2O3、PbO、CuO、TiO2、ZrO2、Al2O3、Cr2O3And R2The glass powder of O has the best spatial distribution; the particle size of the glass powder in the scheme has influence on the performance of the glass powder; the glass powder has a softening point of 400-620 ℃ in the range, and after the glass powder is prepared into the silver paste, the silver paste can be sintered at the temperature of 740-800 ℃, so that the sintering temperature window is wide.
Preferably, the glass frit has a softening point of 400-620 ℃.
The preparation method of the glass powder comprises the following steps:
(1) weighing raw materials of the glass powder according to a proportion, and putting the raw materials into a V-shaped mixer to mix for 30-60 min;
(2) putting the uniformly mixed raw materials into an alumina crucible, and then putting the crucible into a box-type resistance furnace; heating the resistance furnace to 1200-1400 ℃, melting at constant temperature, and preserving heat for 30-60min to obtain uniform glass melt;
(3) pouring the molten glass into a stainless steel container filled with deionized water under the stirring state for quenching to obtain glass slag; putting the broken glass residues into a constant-temperature drying box at the temperature of 100-120 ℃, and drying for 2-3 hours;
(4) carrying out wet ball milling on the dried glass slag by using a planetary ball mill, and firstly, carrying out ball milling for 2-6 hours by using zirconia grinding medium balls with the diameter of 10-15 mm; then adopting zirconia grinding medium balls with the diameter of 1.0-3.0 mm for ball milling for 1-6 hours; putting the glass material obtained after ball milling into a constant-temperature drying box at the temperature of 100-120 ℃, and drying for 5-10 hours;
(5) and sieving the dried glass material to obtain the glass powder.
The front main grid silver paste of the PERC crystalline silicon solar cell comprises the following components in percentage by mass: spherical silver powder, glass powder and adhesive;
the glass powder is the glass powder.
Preferably, the method comprises the following steps by mass percent: 65-90% of spherical silver powder, 1-5% of glass powder and 5-30% of adhesive.
Preferably, the preparation method of the front-side main gate silver paste comprises the following steps:
(S1) weighing the spherical silver powder, the glass powder and the adhesive, and stirring for 30 minutes by a stirrer until the materials are uniform and wet;
(S2) grinding with a three-roll mill to a fineness of less than 7 μm;
(S3) filtering the slurry with a filter cloth.
A PERC crystalline silicon solar cell adopts screen printing to print front main grid silver paste on a monocrystalline silicon piece as a main grid electrode;
the front main grid silver paste is the front main grid silver paste.
And (3) performance detection:
1. IV electrical property test:
and (4) carrying out IV electrical property test on the monocrystalline silicon wafer printed with the main grid slurry and the fine grid silver paste by adopting an IV tester, and testing the open-circuit voltage of the monocrystalline silicon wafer.
2. Peel strength:
and (3) carrying out tension test on the monocrystalline silicon wafer by using a peeling strength tester, clamping the silicon wafer by using the clamp, and testing the peeling strength of the silicon wafer.
Example A:
the glass powder is prepared by the following steps:
(1) weighing the raw materials of the glass powder according to the table 1, and putting the raw materials into a V-shaped mixer for mixing for 60 min;
(2) putting the uniformly mixed raw materials into an alumina crucible, and then putting the crucible into a box-type resistance furnace; heating the resistance furnace to 1200-1400 ℃, melting at constant temperature, and keeping the temperature for 60min to obtain uniform glass melt;
(3) pouring the molten glass into a stainless steel container filled with deionized water under the stirring state for quenching to obtain glass slag; putting the glass slag into a constant-temperature drying box at 110 ℃, and drying for 3 hours;
(4) carrying out wet ball milling on the dried glass slag by using a planetary ball mill, and firstly, carrying out ball milling for 4 hours by using zirconia grinding medium balls with the diameter of 10.0 mm; then, zirconia grinding medium balls with the diameter of 2.0 mm are adopted for ball milling for 4 hours; putting the glass material obtained after ball milling into a constant-temperature drying box at 110 ℃, and drying for 5 hours;
(5) and sieving the dried glass material to obtain the glass powder.
The front main grid silver paste is prepared by the following steps:
(S1) weighing 85% of spherical silver powder, 2% of glass powder and 13% of adhesive, and stirring for 30 minutes by a stirrer until the materials are uniform and wet;
(S2) grinding 4 times by a three-roll mill to make the fineness of the slurry less than 7 μm;
(S3) filtering the slurry by adopting 400-mesh filter cloth to obtain the main grid slurry.
Printing on different 90-square-resistance single crystal silicon wafers, wherein the printer is a BACCINI solar cell printing system; the fine grid adopts mainstream S fine grid silver paste purchased from the market; the main grid paste of different embodiments is screen printed to different monocrystalline silicon wafers by using a 5BB screen printing method.
TABLE 1 glass frit composition of example A
Example a 1-example a11 were subjected to IV electrical property testing and peel strength testing as in table 2.
TABLE 2 Performance testing of example A
Description of the drawings:
1. from examples A1-A8, it is clear that in examples A1-A8, Bi is added2O3、SiO2、B2O3、PbO、CuO、TiO2、ZrO2、Al2O3、Cr2O3And R2O, carrying out a selectivity experiment; while SiO was not added in each example2、B2O3、PbO、CuO、TiO2、ZrO2、Al2O3、Cr2O3And R2And O, the open circuit voltage and the peel strength of the glass powder system are different, which shows that the components in the scheme have influence on the open circuit voltage and the peel strength, and the problem of performance reduction can occur without adding any of the above.
2. Comparison of examples A1-A8 with example 11 shows that examples A1-A8 lack SiO2、B2O3、PbO、CuO、TiO2、ZrO2、Al2O3、Cr2O3And R2O, open circuit voltage variation sensitive; as in example A3, without the addition of PbO, the open circuit voltage dropped from 0.6495V to 0.6412V, the amplitude reached 8.3mV, and the peel strength dropped from 3.69N to 1.53N; example A6 lacks 1% ZrO as in example A62The open-circuit voltage is reduced from 0.6495V to 0.6463V, and the reduction amplitude is 3.2 mV; example 11, in combination with Bi2O3、SiO2、B2O3、PbO、CuO、TiO2、ZrO2、Al2O3、Cr2O3And R2O, which has an open circuit voltage of 0.6495 or more, is better than that of example A1-A8, and shows that Bi is used simultaneously2O3、SiO2、B2O3、PbO、CuO、TiO2、ZrO2、Al2O3、Cr2O3And R2O can effectively improve the open-circuit voltage and the peeling strength.
3. Comparison of examples A9-A10 with example 11 shows that example A9 uses Na alone2O without adding an additional 1% Li2O, example A10 Using Li alone2O without adding an additional 1% Na2O, the properties of both are greatly different from those of example 11; example A9 has an open circuit voltage of 06478V, 1.7mV lower than example A11, peel strength 3.42N, 0.27N lower than example A11; example A10 had an open circuit voltage of 0.6475V, 2.0mV less than example A11, a peel strength of 3.33N, and 0.36N less than example A11; while example A11 used Na in combination2O and Li2O, the open-circuit voltage is 0.6495V, the peel strength is 3.69N, the optimal open-circuit voltage and the optimal adhesive force are realized, the photoelectric conversion efficiency of the PERC solar cell piece can be effectively improved, the high welding adhesive force is provided, and the PN junction of the cell is not damaged.
In conclusion, the glass powder of the scheme simultaneously uses Bi2O3、SiO2、B2O3、PbO、CuO、TiO2、ZrO2、Al2O3、Cr2O3And R2And O, the glass powder with the optimal open-circuit voltage and the optimal adhesive force can be effectively formed, and the glass powder is very suitable for front main gate silver paste.
Example B:
a commercial front-side master grid silver paste DE-746 was used as example B, in comparison to example a 11;
printing on a 90 square resistance single crystal silicon wafer, wherein the printer is a BACCINI solar cell printing system; the fine grid adopts mainstream S fine grid silver paste purchased from the market; and printing the front main grid silver paste DE-746 on a monocrystalline silicon wafer by adopting a 5BB screen printing plate.
The front side master grid silver paste DE-746 was compared in performance with example A11, as in Table 3.
TABLE 3 comparison of the properties of example B
| Performance of | Example B | Example A11 |
| Open circuit voltage (V) | 0.6461 | 0.6495 |
| Peel strength (N) | 3.11 | 3.69 |
Description of the drawings:
the front side main gate silver paste DE-746 used in example B, with an open circuit voltage of 0.6461V, 3.4mV different from 0.6495V of example A11; whereas the peel strength of example B was 3.11N, which is 0.58N different from the 3.69N of example A11, indicating that Bi is present in example A112O3、SiO2、B2O3、PbO、CuO、TiO2、ZrO2、Al2O3、Cr2O3And R2The glass powder composed of O has better open-circuit voltage and adhesive force, and the matching of the components can exert the optimal open-circuit voltage of the glass powder, so that the glass powder is more excellent than that of the glass powder in the embodiment B.
The technical principle of the present invention is described above in connection with specific embodiments. The description is made for the purpose of illustrating the principles of the invention and should not be construed in any way as limiting the scope of the invention. Based on the explanations herein, those skilled in the art will be able to conceive of other embodiments of the present invention without inventive effort, which would fall within the scope of the present invention.
Claims (8)
1. The glass powder for the front main grid silver paste is characterized by comprising 30-60 mass percent of Bi2O310-35% of SiO20.1-15% of B2O35 to 30 percent of PbO, 0.5 to 15 percent of CuO and 0.5 to 10 percent of TiO20.1-6% of ZrO21-5% of Al2O30.5-5% of Cr2O3And 0.1-3% of R2O, wherein R2O is Li2O and Na2One or a combination of two of O.
2. The glass frit for front-side main gate silver paste according to claim 1, wherein the particle size D50 of the glass frit is 0.2-2.5 μm.
3. The glass frit for front surface main gate silver paste as claimed in claim 2, wherein the softening point of the glass frit is 400-620 ℃.
4. The glass frit for front surface main gate silver paste according to any one of claims 1 to 3, wherein the preparation method of the glass frit comprises the following steps:
(1) weighing raw materials of the glass powder according to a proportion, and putting the raw materials into a mixer for mixing;
(2) putting the uniformly mixed raw materials into an alumina crucible, and then putting the crucible into a box-type resistance furnace; heating the resistance furnace to 1200-1400 ℃, melting at constant temperature, and preserving heat to obtain uniform glass melt;
(3) pouring the molten glass into a container filled with deionized water under the stirring state for quenching to obtain glass slag; putting the glass broken slag into a constant-temperature drying box, and drying;
(4) carrying out wet ball milling on the glass slag, and firstly adopting zirconia grinding medium balls with the diameter of 10-15 mm; then adopting zirconia grinding medium balls with the diameter of 1.0-3.0 mm; putting the glass material into a constant-temperature drying box, and drying for 5-10 hours;
(5) and sieving the glass material to obtain the glass powder.
5. The utility model provides a positive main grid silver thick liquid of PERC crystalline silicon solar cell which characterized in that includes: spherical silver powder, glass powder and adhesive;
the glass frit is the glass frit according to any one of claims 1 to 4.
6. The front main grid silver paste of claim 5, comprising by mass: 65-90% of spherical silver powder, 1-5% of glass powder and 5-30% of adhesive.
7. The front side main gate silver paste of claim 6, wherein the preparation method of the front side main gate silver paste comprises the following steps:
(S1) weighing the spherical silver powder, the glass powder and the adhesive, and stirring until the materials are uniform and wet;
(S2) grinding with a three-roll mill to a fineness of less than 7 μm;
(S3) filtering the slurry with a filter cloth.
8. A PERC crystalline silicon solar cell is characterized in that front main grid silver paste is printed on a monocrystalline silicon wafer by adopting screen printing to serve as a main grid electrode;
the front surface main grid silver paste is the front surface main grid silver paste in claim 5.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113593749A (en) * | 2021-07-26 | 2021-11-02 | 浙江光达电子科技有限公司 | PERC crystalline silicon solar cell main grid slurry and preparation method thereof |
| CN113896424A (en) * | 2021-10-14 | 2022-01-07 | 浙江光达电子科技有限公司 | Glass powder for silver paste on back of PERC crystalline silicon solar cell and preparation method |
| CN114530508A (en) * | 2020-11-02 | 2022-05-24 | 苏州阿特斯阳光电力科技有限公司 | PERC battery and photovoltaic module |
| CN115784621A (en) * | 2023-02-07 | 2023-03-14 | 河北省沙河玻璃技术研究院 | Glass product for connecting mobile phone rear cover and lens part and using method |
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| CN102503149A (en) * | 2011-09-22 | 2012-06-20 | 上海交通大学 | Low-lead glass powder for silver paste of anode of solar cell and preparation method of low-lead glass powder |
| US20120312369A1 (en) * | 2011-06-13 | 2012-12-13 | E I Du Pont De Nemours And Company | Thick film paste containing bismuth-based oxide and its use in the manufacture of semiconductor devices |
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| US20120312369A1 (en) * | 2011-06-13 | 2012-12-13 | E I Du Pont De Nemours And Company | Thick film paste containing bismuth-based oxide and its use in the manufacture of semiconductor devices |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114530508A (en) * | 2020-11-02 | 2022-05-24 | 苏州阿特斯阳光电力科技有限公司 | PERC battery and photovoltaic module |
| CN113593749A (en) * | 2021-07-26 | 2021-11-02 | 浙江光达电子科技有限公司 | PERC crystalline silicon solar cell main grid slurry and preparation method thereof |
| CN113593749B (en) * | 2021-07-26 | 2023-03-14 | 浙江光达电子科技有限公司 | PERC crystalline silicon solar cell main grid slurry and preparation method thereof |
| CN113896424A (en) * | 2021-10-14 | 2022-01-07 | 浙江光达电子科技有限公司 | Glass powder for silver paste on back of PERC crystalline silicon solar cell and preparation method |
| CN113896424B (en) * | 2021-10-14 | 2023-11-21 | 浙江光达电子科技有限公司 | Glass powder for PERC crystalline silicon solar cell back silver paste and preparation method |
| CN115784621A (en) * | 2023-02-07 | 2023-03-14 | 河北省沙河玻璃技术研究院 | Glass product for connecting mobile phone rear cover and lens part and using method |
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