CN111629782B - 用于多波长激活的集成在神经探针中的多光源 - Google Patents

用于多波长激活的集成在神经探针中的多光源 Download PDF

Info

Publication number
CN111629782B
CN111629782B CN201980009683.8A CN201980009683A CN111629782B CN 111629782 B CN111629782 B CN 111629782B CN 201980009683 A CN201980009683 A CN 201980009683A CN 111629782 B CN111629782 B CN 111629782B
Authority
CN
China
Prior art keywords
layer
probe
light
light source
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980009683.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN111629782A (zh
Inventor
H.德利吉亚尼
李克涛
李宁
D.萨达纳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN111629782A publication Critical patent/CN111629782A/zh
Application granted granted Critical
Publication of CN111629782B publication Critical patent/CN111629782B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • A61N5/0613—Apparatus adapted for a specific treatment
    • A61N5/0622—Optical stimulation for exciting neural tissue
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • A61N5/0601—Apparatus for use inside the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • A61N5/0601—Apparatus for use inside the body
    • A61N2005/0612—Apparatus for use inside the body using probes penetrating tissue; interstitial probes
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • A61N2005/065—Light sources therefor
    • A61N2005/0651—Diodes
    • A61N2005/0652—Arrays of diodes
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • A61N2005/0658—Radiation therapy using light characterised by the wavelength of light used
    • A61N2005/0659—Radiation therapy using light characterised by the wavelength of light used infrared
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • A61N2005/0658—Radiation therapy using light characterised by the wavelength of light used
    • A61N2005/0662—Visible light
    • A61N2005/0663—Coloured light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biomedical Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Radiology & Medical Imaging (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Animal Behavior & Ethology (AREA)
  • Pathology (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Biophysics (AREA)
  • Neurosurgery (AREA)
  • Led Devices (AREA)
  • Radiation-Therapy Devices (AREA)
  • Led Device Packages (AREA)
CN201980009683.8A 2018-01-26 2019-01-15 用于多波长激活的集成在神经探针中的多光源 Active CN111629782B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/881,211 US10874876B2 (en) 2018-01-26 2018-01-26 Multiple light sources integrated in a neural probe for multi-wavelength activation
US15/881,211 2018-01-26
PCT/IB2019/050291 WO2019145821A1 (en) 2018-01-26 2019-01-15 Multiple light sources integrated in a neural probe for multi-wavelength activation

Publications (2)

Publication Number Publication Date
CN111629782A CN111629782A (zh) 2020-09-04
CN111629782B true CN111629782B (zh) 2022-12-20

Family

ID=67392710

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980009683.8A Active CN111629782B (zh) 2018-01-26 2019-01-15 用于多波长激活的集成在神经探针中的多光源

Country Status (6)

Country Link
US (1) US10874876B2 (enExample)
JP (2) JP2021511100A (enExample)
CN (1) CN111629782B (enExample)
DE (1) DE112019000533B4 (enExample)
GB (1) GB2585295B (enExample)
WO (1) WO2019145821A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114206435B (zh) 2019-08-05 2025-03-14 诺欧生物有限责任公司 中枢神经系统障碍的治疗
CA3177142A1 (en) * 2020-04-27 2021-11-04 Oussama MOUTANABBIR Short-wave infrared and mid-wave infrared optoelectronic device and methods for manufacturing the same
EP3906967B1 (de) * 2020-05-05 2024-02-28 Richard Wolf GmbH Lichtapplikator
CN114883309A (zh) * 2022-05-26 2022-08-09 中国科学院半导体研究所 植入式光源及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6379296B1 (en) * 1999-03-26 2002-04-30 Richard W. Baggett Medical lighting device
WO2005020287A2 (en) * 2003-08-22 2005-03-03 The Board Of Trustees Of The University Of Illinois Semiconductor device and method
CN103083827A (zh) * 2012-12-26 2013-05-08 东南大学 一种植入式蓝宝石基二维神经激励芯片及其制备方法
CN103119722A (zh) * 2010-09-21 2013-05-22 量子电镀光学系统有限公司 发光及激光半导体的方法及装置
JP2016101478A (ja) * 2014-11-13 2016-06-02 博基 島 細胞活性化装置
CN106910803A (zh) * 2015-12-23 2017-06-30 比亚迪股份有限公司 发光二极管外延片及其制造方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9912583D0 (en) * 1999-05-28 1999-07-28 Arima Optoelectronics Corp A light emitting diode having a two well system with asymmetric tunneling
WO2002013906A1 (en) 2000-08-16 2002-02-21 Vanderbilt University Methods and devices for optical stimulation of neural tissues
JP4281569B2 (ja) 2004-02-17 2009-06-17 日立電線株式会社 半導体発光素子用エピタキシャルウェハの製造方法
RU2007117152A (ru) * 2004-10-08 2008-11-20 Дзе Риджентс Оф Дзе Юниверсити Оф Калифорния (Us) Высокоэффективные светоизлучающие диоды
US20140324138A1 (en) 2007-05-09 2014-10-30 Massachusetts Institute Of Technology Wirelessly-powered illumination of biological tissue
JP5386747B2 (ja) * 2008-02-21 2014-01-15 公益財団法人神奈川科学技術アカデミー 半導体基板、半導体素子、発光素子及び電子素子
TW201032350A (en) * 2009-02-20 2010-09-01 Univ Nat Central A manufacturing method of LED
KR101019464B1 (ko) * 2009-03-25 2011-03-07 한국과학기술연구원 광 자극 시스템
CN101521258B (zh) * 2009-03-27 2013-07-31 华灿光电股份有限公司 一种提高发光二极管外量子效率的方法
WO2011035265A1 (en) * 2009-09-18 2011-03-24 Soraa, Inc. Power light emitting diode and method with current density operation
CN102185074A (zh) * 2011-04-07 2011-09-14 上海大学 Ag/氧化锌基复合透明电极的发光二极管及其制备方法
US9801559B2 (en) 2011-07-25 2017-10-31 Diagnostic Biochips, Inc. Integrated optical neural probe
WO2013086457A1 (en) * 2011-12-07 2013-06-13 California Institute Of Technology Caged compound delivery and related compositions, methods and systems
GB201121874D0 (en) 2011-12-20 2012-02-01 Mled Ltd Integrated medical device
CN102931302B (zh) * 2012-10-17 2015-04-22 华灿光电股份有限公司 一种蓝绿光二极管外延片及其制造方法
KR102053388B1 (ko) * 2013-06-11 2019-12-06 엘지이노텍 주식회사 발광소자
US10004917B2 (en) * 2013-07-11 2018-06-26 Board Of Trustees Of Michigan State University Neural prosthetic device and method of making same
CN104332539B (zh) * 2013-07-22 2017-10-24 中国科学院福建物质结构研究所 GaN基LED外延结构及其制造方法
EP2870980B1 (en) 2013-11-08 2018-08-08 NeuroNexus Technologies, Inc. Three-dimensional neural probe microelectrode array
EP3107620B1 (en) 2013-12-20 2021-09-29 Neuronano AB Medical device comprising an electrode and a light source
KR101564710B1 (ko) * 2014-05-27 2015-11-02 (재)한국나노기술원 파장 제어가 가능한 탐침의 제조방법 및 그에 의해 제조된 탐침
CN105637641B (zh) * 2014-07-30 2018-08-28 孙润光 一种红色无机发光二极管显示器件及其制作方法
JP6281087B2 (ja) * 2014-10-02 2018-02-21 株式会社テクノリンク 生体刺激装置
US9425351B2 (en) * 2014-10-06 2016-08-23 Wisconsin Alumni Research Foundation Hybrid heterostructure light emitting devices
US9653642B1 (en) * 2014-12-23 2017-05-16 Soraa Laser Diode, Inc. Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes
CN104600165B (zh) * 2015-02-06 2018-03-23 安徽三安光电有限公司 一种氮化物发光二极体结构
US10695581B2 (en) 2015-06-19 2020-06-30 The Regents Of The University Of Michigan Multicolor neural optoelectrode
US11160489B2 (en) 2015-07-02 2021-11-02 The Board Of Trustees Of The University Of Illinois Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics
WO2017019482A1 (en) 2015-07-24 2017-02-02 Massachusetts Institute Of Technology Apparatus, systems, and methods for biomedical imaging and stimulation
JP6404282B2 (ja) 2015-08-17 2018-10-10 ソレアロ テクノロジーズ コーポレイション 多接合反転変成ソーラーセル
GB201522790D0 (en) * 2015-12-23 2016-02-03 Univ Newcastle Temperature sensor
CN105633226A (zh) * 2015-12-31 2016-06-01 天津三安光电有限公司 一种具有双结的红外光发光二极管
CN106308754A (zh) 2016-09-18 2017-01-11 广东顺德中山大学卡内基梅隆大学国际联合研究院 一种可植入式微型led神经探针
CN106913315A (zh) 2017-03-16 2017-07-04 中国科学院半导体研究所 光刺激及信号采集探针

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6379296B1 (en) * 1999-03-26 2002-04-30 Richard W. Baggett Medical lighting device
WO2005020287A2 (en) * 2003-08-22 2005-03-03 The Board Of Trustees Of The University Of Illinois Semiconductor device and method
CN103119722A (zh) * 2010-09-21 2013-05-22 量子电镀光学系统有限公司 发光及激光半导体的方法及装置
CN103083827A (zh) * 2012-12-26 2013-05-08 东南大学 一种植入式蓝宝石基二维神经激励芯片及其制备方法
JP2016101478A (ja) * 2014-11-13 2016-06-02 博基 島 細胞活性化装置
CN106910803A (zh) * 2015-12-23 2017-06-30 比亚迪股份有限公司 发光二极管外延片及其制造方法

Also Published As

Publication number Publication date
DE112019000533T5 (de) 2020-10-08
GB2585295A (en) 2021-01-06
GB2585295B (en) 2022-06-08
JP7497942B2 (ja) 2024-06-11
US10874876B2 (en) 2020-12-29
JP2021511100A (ja) 2021-05-06
WO2019145821A1 (en) 2019-08-01
GB202013202D0 (en) 2020-10-07
CN111629782A (zh) 2020-09-04
JP2023036739A (ja) 2023-03-14
US20190232083A1 (en) 2019-08-01
DE112019000533B4 (de) 2025-02-06

Similar Documents

Publication Publication Date Title
JP7497942B2 (ja) 多波長活性化のために神経プローブに組み込まれる多光源
CN101248537B (zh) 带有经粗化的高折射率表面层以便进行高度光提取的发光二极管
US8952243B2 (en) Stacked structure including vertically grown semiconductor, p-n junction device including the stacked structure, and method of manufacturing thereof
KR20180055803A (ko) 나노와이어/나노피라미드 형상 발광 다이오드 및 광검출기
TW201044638A (en) Semiconductor light emitting element and method for producing semiconductor light emitting element
Tsai et al. p-Cu2O-shell/n-TiO2-nanowire-core heterostucture photodiodes
TW201001726A (en) Techniques for enhancing efficiency of photovoltaic devices using high-aspect-ratio nanostructures
CN106415858A (zh) 具有改进的光萃取的包括发光二极管的光电子器件
CN103760336A (zh) 一种线阵ZnO纳米线异质结LED生物传感器及制备方法
Hong et al. Impact of grain growth of silver reflective electrode by electron bombardment on external quantum efficiency of III-nitride micro-light-emitting diode arrays
CN102447045A (zh) 发光二极管及其制造方法
US10580925B2 (en) High voltage photovoltaics integrated with light emitting diode containing zinc oxide containing layer
US9876142B2 (en) Optoelectronic device comprising light-emitting diodes
Ji et al. GaOx@ GaN nanowire arrays on flexible graphite paper with tunable persistent photoconductivity
US20190341528A1 (en) LIGHT EMITTING DIODE WITH ZnO EMITTER
Wei et al. Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes
US8933434B2 (en) Elemental semiconductor material contact for GaN-based light emitting diodes
Kumar et al. Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using Al x Ga1–x N/GaN High Electron Mobility Transistor Structures on Si (111)
TWI885029B (zh) 用雷射進行處理之裝置、製造裝置之方法、及用雷射處理裝置之方法
Yang et al. Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal
JP2014183090A (ja) 透明電極構造、窒化物半導体発光ダイオード、及び透明電極成膜方法
CN109166953B (zh) 一种发光二极管芯片及其制作方法
TW200947759A (en) Light-emitting diodes
Bi et al. Ultraviolet light-emitting diode arrays using Ga-doped ZnO as current spreading layer
TWI258228B (en) Light emitting semiconductor device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant