CN111591955B - Wafer bonding structure and method - Google Patents
Wafer bonding structure and method Download PDFInfo
- Publication number
- CN111591955B CN111591955B CN202010456531.7A CN202010456531A CN111591955B CN 111591955 B CN111591955 B CN 111591955B CN 202010456531 A CN202010456531 A CN 202010456531A CN 111591955 B CN111591955 B CN 111591955B
- Authority
- CN
- China
- Prior art keywords
- wafer
- bonding
- measurement pattern
- pattern
- bonding structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000005259 measurement Methods 0.000 claims abstract description 153
- 230000005496 eutectics Effects 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 abstract description 124
- 230000008569 process Effects 0.000 abstract description 11
- 238000012544 monitoring process Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/00238—Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/002—Aligning microparts
- B81C3/004—Active alignment, i.e. moving the elements in response to the detected position of the elements using internal or external actuators
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention provides a wafer bonding structure and a method, comprising the following steps: a first wafer and a second wafer are provided, wherein a first bonding structure is formed on the first wafer, and a second bonding structure is formed on the second wafer. The first bonding structure is provided with a first alignment pattern and a first measurement pattern, and the second bonding structure is provided with a second alignment pattern and a second measurement pattern. The first alignment pattern and the second alignment pattern are aligned, and the first measurement pattern corresponds to the second measurement pattern. After bonding the first wafer and the second wafer, acquiring deviation formed by the first measurement pattern and the second measurement pattern to obtain a deviation value of wafer bonding. According to the invention, the first measurement pattern and the second measurement pattern are respectively added on the first bonding structure and the second bonding structure, so that after the wafers are bonded, bonding deviation values can be directly read, accurate monitoring of a process is realized, the calibration of a bonding machine is facilitated, and the yield of devices is improved.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technology, and in particular, to a wafer bonding structure and method.
Background
Microelectromechanical systems (Micro-Electro-Mechanical Systems, MEMS) technology was known as a revolutionary high-tech technology in the 21 st century. Currently, high-integration MEMS devices based on silicon, such as acceleration sensors, gyroscopes, and the like, are increasingly used in various fields such as industry, automobiles, medical treatment, military, and the like. Among them, the wafer bonding technology is one of key technologies for the development and the practical use of MEMS technology.
The wafer bonding technology is to bond two wafers together by mutually reacting atoms on the surfaces of the two wafers and achieving a certain strength. Wafer bonding may be accomplished by a variety of methods such as fusion bonding, thermocompression bonding, low temperature vacuum bonding, anodic bonding, eutectic bonding, and the like. The eutectic bonding process generally respectively produces an aluminum bonding layer and a germanium bonding layer in bonding areas of the surfaces of two wafers to be bonded, forms eutectic alloy in the process through the two materials, and connects the two wafers by using the eutectic bonding crystal as an intermediate layer. The alignment accuracy of the microscopic patterns on the aluminum bonding layer and the germanium bonding layer is extremely important in the bonding process, and the performance of the device can be directly influenced. However, current bonding processes can only align by bonding machine recognition of microscopic patterns and cannot directly measure bonding bias. Therefore, a technician can only estimate whether the wafer bonding meets the process standard by visual inspection through experience, but the accuracy is low, and the device yield cannot be ensured.
Therefore, there is a need for a wafer bonding method that can accurately measure the alignment accuracy of two wafer bonds, which is helpful for improving the bonding process and improving the device yield.
Disclosure of Invention
The invention aims to provide a wafer bonding structure and a wafer bonding method, which are used for solving the problem that a wafer bonding deviation value cannot be accurately measured.
In order to solve the above technical problems, the present invention provides a wafer bonding method, which includes:
providing a first wafer and a second wafer, wherein a first bonding structure is formed on the first wafer, and a second bonding structure is formed on the second wafer; the first bonding structure is provided with a first alignment pattern and a first measurement pattern, and the second bonding structure is provided with a second alignment pattern and a second measurement pattern;
aligning the first alignment pattern and the second alignment pattern such that the first wafer and the second wafer are aligned and such that the first measurement pattern corresponds to the second measurement pattern;
connecting the first bonding structure and the second bonding structure to bond the first wafer and the second wafer;
and acquiring deviation formed by the first measurement pattern and the second measurement pattern to obtain a deviation value of wafer bonding.
Optionally, in the wafer bonding method, the first measurement pattern includes a first measurement pattern in a first direction and a first measurement pattern in a second direction; the second measurement pattern includes a second measurement pattern in the first direction and a second measurement pattern in the second direction.
Optionally, in the wafer bonding method, the first direction and the second direction are perpendicular to each other.
Optionally, in the wafer bonding method, the first measurement pattern and the second pattern are both scale patterns.
Optionally, in the wafer bonding method, a difference between the index value of the first measurement pattern and the index value of the second measurement pattern ranges from greater than 0 micrometers to less than 10 micrometers.
Optionally, in the wafer bonding method, after obtaining the deviation formed by the first measurement pattern and the second measurement pattern to obtain the deviation value of the wafer bonding, the wafer bonding method further includes: and judging whether the deviation value is in a set range, and if not, calibrating the bonding machine according to the deviation value.
Optionally, in the wafer bonding method, the set range is greater than or equal to 0 micrometers and less than or equal to 10 micrometers.
Optionally, in the wafer bonding method, a plurality of first measurement patterns are formed on the first bonding structure; a plurality of the second measurement patterns are formed on the second bonding structure.
Optionally, in the wafer bonding method, a plurality of first bonding structures are formed on the first wafer; a plurality of the second bonding structures are formed on the second wafer.
Based on the same inventive concept, the present invention also provides a wafer bonding structure, including:
a first wafer, on which a first bonding structure is formed, on which a first alignment pattern and a first measurement pattern are formed;
a second wafer on which a second bonding structure is formed, the second bonding structure having a second alignment pattern and a second measurement pattern formed thereon;
the first wafer and the second wafer are bonded together through the connection of the first bonding structure and the second bonding structure;
wherein the first alignment pattern and the second alignment pattern are aligned, and the first measurement pattern corresponds to the second measurement pattern.
In summary, the present invention provides a wafer bonding structure and method, including: a first wafer and a second wafer are provided, wherein a first bonding structure is formed on the first wafer, and a second bonding structure is formed on the second wafer. The first bonding structure is provided with a first alignment pattern and a first measurement pattern, and the second bonding structure is provided with a second alignment pattern and a second measurement pattern. The first alignment pattern and the second alignment pattern are aligned such that the first wafer and the second wafer are aligned and such that the first measurement pattern corresponds to the second measurement pattern. And connecting the first bonding structure and the second bonding structure to bond the first wafer and the second wafer. And acquiring deviation formed by the first measurement pattern and the second measurement pattern to obtain a deviation value of wafer bonding. According to the invention, the first measurement pattern and the second measurement pattern are respectively added on the first bonding structure and the second bonding structure, so that after bonding of the wafer, the bonding deviation value can be directly read, the accurate monitoring of the wafer bonding process is realized, the calibration of a bonding machine is facilitated, the bonding process is improved, and the yield of devices is increased.
Drawings
FIG. 1 is a flow chart of a wafer bonding method according to an embodiment of the present invention;
FIG. 2 is a schematic view of a first wafer structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a second wafer structure according to an embodiment of the present invention;
FIG. 4 is a schematic view of a first bonding structure according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a second bonding structure according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of alignment of a first measurement pattern and a second measurement pattern according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a bonded structure of a first wafer and a second wafer according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a eutectic bond structure in accordance with an embodiment of the present invention;
FIG. 9 is a schematic diagram of alignment of a first measurement pattern and a second measurement pattern when the deviation value is 2 microns according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of alignment of a first measurement pattern and a second measurement pattern when the deviation value is 3 microns according to an embodiment of the present invention;
wherein, the reference numerals illustrate:
100-a first wafer; 101-a first bonding structure; 102-a first measurement pattern; 103-a first alignment pattern; 102 a-a first measurement pattern of a first direction; 102 b-a first measurement pattern in a second direction;
200-a second wafer; 201-a second bonding structure; 202-a second measurement pattern; 203-a second alignment pattern; 202 a-a second measurement pattern of the first direction; 202 b-a second measurement pattern in a second direction;
300-eutectic bond; 301-post-bond alignment pattern;
d 1 -an index value of the first measurement pattern; d, d 2 -a width of the first scale mark; d, d 3 -the spacing of two adjacent said first scale markings; d, d 4 -an index value of the second measurement pattern; d, d 5 -the width of the second scale mark; d, d 6 -the spacing of two adjacent said second scale markings.
Detailed Description
The following describes a wafer bonding structure and method according to the present invention in further detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention. Furthermore, the structures shown in the drawings are often part of actual structures. In particular, the drawings are shown with different emphasis instead being placed upon illustrating the various embodiments.
Referring to fig. 1, the present embodiment provides a wafer bonding method, which includes:
step one S10: providing a first wafer and a second wafer, wherein a first bonding structure is formed on the first wafer, and a second bonding structure is formed on the second wafer; the first bonding structure is provided with a first alignment pattern and a first measurement pattern, and the second bonding structure is provided with a second alignment pattern and a second measurement pattern.
Step two S20: the first alignment pattern and the second alignment pattern are aligned such that the first wafer and the second wafer are aligned and such that the first measurement pattern corresponds to the second measurement pattern.
Step three S30: and connecting the first bonding structure and the second bonding structure to bond the first wafer and the second wafer.
Step four, S40: and acquiring deviation formed by the first measurement pattern and the second measurement pattern to obtain a deviation value of wafer bonding.
Referring to fig. 2-8, fig. 2 is a schematic view of a first wafer structure according to an embodiment of the invention. Fig. 3 is a schematic diagram of a second wafer structure according to an embodiment of the present invention. Fig. 4 is a schematic structural diagram of a first bonding structure according to an embodiment of the present invention. Fig. 5 is a schematic structural diagram of a second bonding structure according to an embodiment of the present invention. Fig. 6 is a schematic alignment diagram of a first measurement pattern and a second measurement pattern according to an embodiment of the present invention. Fig. 7 is a schematic diagram of a bonded structure of a first wafer and a second wafer according to an embodiment of the present invention. FIG. 8 is a schematic diagram of eutectic bond structures in accordance with an embodiment of the present invention.
Step one S10: as shown in fig. 2-5, a first wafer 100 and a second wafer 200 are provided, the first wafer 100 having a first bond structure 101 formed thereon, and the second wafer 200 having a second bond structure 201 formed thereon. The first bonding structure 101 has a first measurement pattern 102 and a first alignment pattern 103 formed thereon, and the second bonding structure 201 has a second measurement pattern 202 and a second alignment pattern 203 formed thereon.
In this embodiment, the MEMS device is formed on the first wafer 100, and the CMOS integrated circuit is formed on the second wafer 200. The first bonding structure 101 is a germanium layer deposited on the surface of the first wafer 100 in a standard vacuum sputtering deposition system, and the germanium layer is patterned by using photolithography and etching techniques to form a first measurement pattern 102 and a first alignment pattern 103. The second bonding structure 201 is an aluminum layer formed on the surface of the second wafer 200, and the aluminum layer is patterned by using photolithography and etching techniques to form a second measurement pattern 202 and a second alignment pattern 203. Wherein the first alignment pattern 103 and the second alignment pattern 203 are alignment marks that the bonding machine needs to recognize. The first measurement pattern 102 and the second measurement pattern 202 are scale patterns for measuring bonding bias values of the first wafer 100 and the second wafer 200.
As shown in fig. 4-5, the first measurement pattern 102 includes a first measurement pattern 102a in a first direction and a first measurement pattern 102b in a second direction. The second measurement pattern 202 includes a first directional second measurement pattern 202a and a second directional second measurement pattern 202b. The positions of the first measurement pattern 102 and the second measurement pattern 202 with respect to the first alignment pattern 103 or the second alignment pattern 203 are not particularly limited in this example, but the arrangement directions of the first measurement pattern 102a in the first direction and the first measurement pattern 102b in the second direction are perpendicular to each other. The arrangement direction of the second measurement pattern 202a in the first direction and the arrangement direction of the second measurement pattern 202b in the second direction are perpendicular to each other. Wherein, in the horizontal coordinate system, the first direction may represent the X direction and the second direction may represent the Y direction. The X direction and the Y direction are perpendicular to each other. Further, the first measurement pattern 102a in the first direction and the second measurement pattern 202a in the first direction are used for measuring alignment deviation in the X-axis direction, and the first measurement pattern 102b in the second direction and the second measurement pattern 202b in the second direction are used for measuring alignment deviation in the Y-axis direction.
In order to improve measurement accuracy, a plurality of the first measurement patterns 102 are formed on the first bonding structure 101, and a plurality of the second measurement patterns 202 are formed on the second bonding structure 201. The number of which may be 4, 6 or 8, etc. As shown in fig. 4-5, the number of the first measurement patterns 102 and the second measurement patterns 202 is 6, and the number of the first measurement patterns 102a in the first direction and the number of the first measurement patterns 102b in the second direction are 3 respectively; the number of the second measurement patterns 202a and 202b in the first and second directions is 3, respectively. Optionally, the arrangement between the first measurement patterns 102a in the first direction, the first measurement patterns 102b in the second direction, the second measurement patterns 202a in the first direction, and the second measurement patterns 202b in the second direction includes, but is not limited to, parallel arrangement. However, it is necessary to ensure that correspondence as shown in fig. 6 can be formed between the first measurement pattern 102a in the first direction and the second measurement pattern 202a in the first direction and between the first measurement pattern 102b in the second direction and the second measurement pattern 202b in the second direction for reading the deviation values in the X direction and the Y direction.
Further, the difference between the index value of the first measurement pattern 102 and the index value of the second measurement pattern 202 ranges from greater than 0 microns to less than 10 microns. Wherein the larger the measurement accuracy is, the smaller the difference between the graduation values of the first measurement pattern 102 and the graduation values of the second measurement pattern 202 are, the difference may be 1 micron, 2 microns, 3 microns, 9 microns, or the like. In this embodiment, the graduation value of the first measurement pattern 102 is 1 micron greater than the graduation value of the second measurement pattern 202. As shown in fig. 6, the index d of the first measurement pattern 101 1 17 micrometers, wherein the width d of the first scale mark on the first measurement pattern 101 2 At a distance d of 9 microns between two adjacent first scale marks 3 Is 8 microns. The index value d of the second measurement pattern 201 4 16 microns, wherein the width d of the second scale mark on the second measurement pattern 201 5 At a distance d of 5.5 μm between two adjacent second scale marks 6 Is 10.5 microns.
Step two S20: referring to fig. 7-8, the first alignment pattern 103 and the second alignment pattern 203 are aligned such that the first wafer 100 and the second wafer 200 are aligned and such that the first measurement pattern 102 corresponds to the second measurement pattern 202.
The first alignment pattern 103 and the second alignment pattern 203 on the first bonding structure 101 and the second bonding structure 102 are identified using a wafer bonding machine, and the first alignment pattern 103 and the second alignment pattern 203 are aligned. Then, the first bonding structure 101 is attached to the second bonding structure 102, so that the first wafer 100 and the second wafer 200 are aligned, and the first measurement pattern 102 corresponds to the second measurement pattern 202. Preferably, the first bonding structure and the second bonding structure are equal in size, which is more advantageous for aligning the first wafer 100 and the second wafer 200 by the wafer bonding machine.
Step three S30: the first bonding structure 101 and the second bonding structure 201 are connected to bond the first wafer 100 and the second wafer 200 and form a eutectic bond 300, as shown in fig. 7. Wherein the first alignment pattern 103 and the second alignment pattern 203 are aligned to form a post-bonding alignment pattern 301 shown in fig. 8, and the first measurement pattern 102 corresponds to the second measurement pattern 202.
Further, the method of bonding the first wafer 100 and the second wafer 200 includes, but is not limited to, fusion bonding, thermocompression bonding, low temperature vacuum bonding, anodic bonding, eutectic bonding, and the like.
Step four, S40: and acquiring the deviation formed by the first measurement pattern 102 and the second measurement pattern 103 to obtain a deviation value of the wafer bonding.
In this embodiment, the deviation value in the X-axis direction and the deviation value in the Y-axis direction are respectively read by the infrared control machine. In reading the deviation value, a vernier caliper reading method is adopted, that is, as shown in fig. 6, when the zero scales of the first measurement pattern 102 and the second measurement pattern 202 are aligned, the deviation value is 0. When the zero scales of the first measurement pattern 102 and the second measurement pattern 202 are not aligned, a scale mark with aligned scales is found, and the scale m of the second measurement pattern 202 at the position is read, so as to obtain a deviation value m×n, where n is a difference value between the graduation value of the first measurement pattern 102 and the graduation value of the second measurement pattern 202. In this example, n=1 micron, and the deviation values are 2 microns and 3 microns, respectively, as shown in fig. 9-10.
After obtaining the deviation value of the wafer bonding, the wafer bonding method further comprises the following steps: and judging whether the deviation value is in a set range, and if not, calibrating the bonding machine according to the deviation value. Wherein the set range is greater than or equal to 0 microns and less than or equal to 10 microns. That is, the deviation conforming to the set range means that the deviation value in the X-axis direction and the deviation value in the Y-axis direction are each less than or equal to 10 μm.
Based on the same inventive concept, the present embodiment further provides a wafer bonding structure, including: a first wafer 100, a first bonding structure 101 is formed on the first wafer 100, and a first alignment pattern 103 and a first measurement pattern 102 are formed on the first bonding structure 101. A second wafer 200, a second bonding structure 201 is formed on the second wafer 200, and a second alignment pattern 203 and a second measurement pattern 202 are formed on the second bonding structure 201. The first wafer 100 and the second wafer 200 are bonded together by the connection of the first bonding structure 101 and the second bonding structure 201. Wherein the first alignment pattern 103 and the second alignment pattern 102 are aligned, and the first measurement pattern corresponds to 102 the second measurement pattern 202.
Preferably, a plurality of first bonding structures 101 and second bonding structures 201 may be formed on the first wafer 100 and the second wafer 200, respectively, to ensure that the bonding of the first wafer 100 and the second wafer 200 is more stable.
In summary, according to the wafer bonding structure and the method provided in the embodiments, the first measurement pattern and the second measurement pattern are respectively added to the first bonding structure and the second bonding structure, so that after wafer bonding, a bonding deviation value can be directly read, accurate monitoring of a wafer bonding process is achieved, improvement of the bonding process is facilitated, and yield of devices is guaranteed.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.
Claims (9)
1. A wafer bonding method, comprising:
providing a first wafer and a second wafer, wherein a first bonding structure is formed on the first wafer, and a second bonding structure is formed on the second wafer; the first bonding structure is provided with a first alignment pattern and a first measurement pattern, and the second bonding structure is provided with a second alignment pattern and a second measurement pattern;
aligning the first alignment pattern and the second alignment pattern such that the first wafer and the second wafer are aligned and such that the first measurement pattern corresponds to the second measurement pattern;
connecting the first bonding structure and the second bonding structure to bond the first wafer and the second wafer and form a eutectic bond;
acquiring deviation formed by the first measurement pattern and the second measurement pattern to obtain a deviation value of wafer bonding;
and judging whether the deviation value is in a set range, and if not, calibrating the bonding machine according to the deviation value.
2. The wafer bonding method according to claim 1, wherein the first measurement pattern includes a first measurement pattern of a first direction and a first measurement pattern of a second direction; the second measurement pattern includes a second measurement pattern in the first direction and a second measurement pattern in the second direction.
3. The wafer bonding method according to claim 2, wherein the first direction and the second direction are perpendicular to each other.
4. The wafer bonding method according to claim 1, wherein the first measurement pattern and the second measurement pattern are each scale patterns.
5. The wafer bonding method according to claim 4, wherein a difference between the index value of the first measurement pattern and the index value of the second measurement pattern ranges from more than 0 micrometers to less than 10 micrometers.
6. The wafer bonding method according to claim 1, wherein the set range is greater than or equal to 0 microns and less than or equal to 10 microns.
7. The wafer bonding method according to claim 1, wherein a plurality of the first measurement patterns are formed on the first bonding structure; a plurality of the second measurement patterns are formed on the second bonding structure.
8. The wafer bonding method according to claim 1, wherein a plurality of the first bonding structures are formed on the first wafer; a plurality of the second bonding structures are formed on the second wafer.
9. A wafer bonding structure, characterized in that it is prepared by the wafer bonding method according to any one of claims 1 to 8, and comprises:
a first wafer, on which a first bonding structure is formed, on which a first alignment pattern and a first measurement pattern are formed;
a second wafer on which a second bonding structure is formed, the second bonding structure having a second alignment pattern and a second measurement pattern formed thereon;
the first wafer and the second wafer are bonded together through the connection of the first bonding structure and the second bonding structure;
wherein the first alignment pattern and the second alignment pattern are aligned, and the first measurement pattern corresponds to the second measurement pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010456531.7A CN111591955B (en) | 2020-05-26 | 2020-05-26 | Wafer bonding structure and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010456531.7A CN111591955B (en) | 2020-05-26 | 2020-05-26 | Wafer bonding structure and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111591955A CN111591955A (en) | 2020-08-28 |
| CN111591955B true CN111591955B (en) | 2024-02-02 |
Family
ID=72188800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010456531.7A Active CN111591955B (en) | 2020-05-26 | 2020-05-26 | Wafer bonding structure and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111591955B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112201572A (en) * | 2020-09-18 | 2021-01-08 | 武汉新芯集成电路制造有限公司 | Method for stacking multilayer wafers and system for stacking multilayer wafers |
| CN114014261A (en) * | 2021-10-12 | 2022-02-08 | 上海华虹宏力半导体制造有限公司 | Method and structure for measuring wafer bonding alignment precision |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000357720A (en) * | 1999-06-15 | 2000-12-26 | Oki Electric Ind Co Ltd | Semiconductor device |
| CN104078446A (en) * | 2013-03-27 | 2014-10-01 | 中芯国际集成电路制造(上海)有限公司 | Bonding alignment mark and method for calculating offset |
| CN105357902A (en) * | 2015-11-23 | 2016-02-24 | 中山市惠亚线路版有限公司 | Multilayer circuit board alignment degree detection method |
| CN206992074U (en) * | 2017-07-06 | 2018-02-09 | 武汉新芯集成电路制造有限公司 | A kind of structure for feeler switch synthetic circle alignment error |
| CN108206142A (en) * | 2016-12-20 | 2018-06-26 | 中芯国际集成电路制造(上海)有限公司 | A kind of detection method and semiconductor devices for being bonded alignment precision |
| CN109285803A (en) * | 2018-09-20 | 2019-01-29 | 武汉新芯集成电路制造有限公司 | Wafer bonding method and device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7180593B2 (en) * | 2003-11-05 | 2007-02-20 | Macronix International Co., Ltd. | Overlay mark for aligning different layers on a semiconductor wafer |
| JP2007173375A (en) * | 2005-12-20 | 2007-07-05 | Nec Corp | Compound packaging device and manufacturing method thereof |
-
2020
- 2020-05-26 CN CN202010456531.7A patent/CN111591955B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000357720A (en) * | 1999-06-15 | 2000-12-26 | Oki Electric Ind Co Ltd | Semiconductor device |
| CN104078446A (en) * | 2013-03-27 | 2014-10-01 | 中芯国际集成电路制造(上海)有限公司 | Bonding alignment mark and method for calculating offset |
| CN105357902A (en) * | 2015-11-23 | 2016-02-24 | 中山市惠亚线路版有限公司 | Multilayer circuit board alignment degree detection method |
| CN108206142A (en) * | 2016-12-20 | 2018-06-26 | 中芯国际集成电路制造(上海)有限公司 | A kind of detection method and semiconductor devices for being bonded alignment precision |
| CN206992074U (en) * | 2017-07-06 | 2018-02-09 | 武汉新芯集成电路制造有限公司 | A kind of structure for feeler switch synthetic circle alignment error |
| CN109285803A (en) * | 2018-09-20 | 2019-01-29 | 武汉新芯集成电路制造有限公司 | Wafer bonding method and device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111591955A (en) | 2020-08-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111591955B (en) | Wafer bonding structure and method | |
| TW201126638A (en) | Device for alignment of two substrates | |
| US7788818B1 (en) | Mesoscale hybrid calibration artifact | |
| KR101487597B1 (en) | Tool induced shift reduction determination for overlay metrology | |
| US8042400B2 (en) | Pressure sensor | |
| KR101223862B1 (en) | Pressure sensor | |
| US5335544A (en) | Apparatus for measuring mechanical forces and force actions | |
| CN108008150A (en) | A kind of low intersecting axle sensitivity piezoresistive accelerometer structure and production method | |
| CN112201645A (en) | Overlay mark, overlay error measuring method of wafer and stacking method of wafer | |
| CN112241045A (en) | Optical system, carrier substrate and method for manufacturing an optical system | |
| JP6258977B2 (en) | Sensor and manufacturing method thereof | |
| CN101871825A (en) | Membrane stress testing structure and method as well as manufacturing method | |
| EP2181961A2 (en) | MEMS devices and methods of assembling micro electromechanical systems (MEMS) | |
| JP4610447B2 (en) | Semiconductor device and its manufacturing method and inspection method | |
| CN112241046B (en) | Optical system, optical component and method for producing an optical system | |
| CN106597012A (en) | Accelerometer based on light intensity modulation type MOEMS | |
| CN106405151A (en) | Method for preparing low stress Z-axis accelerometer | |
| TWI402566B (en) | Pad region having conductive wire pattern and method of monitoring the bonding error of a film | |
| CN114121707A (en) | Method for detecting STI trench depth | |
| CN113109997B (en) | Method and structure for measuring photoetching overlay error before and after epitaxy | |
| CN114014261A (en) | Method and structure for measuring wafer bonding alignment precision | |
| CN113192930B (en) | Offset detection structure and substrate offset detection method | |
| Büttgenbach et al. | Piezoresistive pressure sensors | |
| CN203720533U (en) | Positioning system of marking plate | |
| CN110207864B (en) | Sensitive membrane and force transmission guide rod integrated micro-force sensor and processing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |