CN111591955A - Wafer bonding structure and method - Google Patents
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- CN111591955A CN111591955A CN202010456531.7A CN202010456531A CN111591955A CN 111591955 A CN111591955 A CN 111591955A CN 202010456531 A CN202010456531 A CN 202010456531A CN 111591955 A CN111591955 A CN 111591955A
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000005259 measurement Methods 0.000 claims abstract description 152
- 235000012431 wafers Nutrition 0.000 abstract description 135
- 238000012544 monitoring process Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 230000005496 eutectics Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/00238—Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/002—Aligning microparts
- B81C3/004—Active alignment, i.e. moving the elements in response to the detected position of the elements using internal or external actuators
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a wafer bonding structure and a method, comprising the following steps: providing a first wafer and a second wafer, wherein a first bonding structure is formed on the first wafer, and a second bonding structure is formed on the second wafer. The first bonding structure is formed with a first alignment pattern and a first measurement pattern, and the second bonding structure is formed with a second alignment pattern and a second measurement pattern. The first alignment pattern and the second alignment pattern are aligned and the first measurement pattern is made to correspond to the second measurement pattern. And after bonding the first wafer and the second wafer, acquiring deviation formed by the first measurement pattern and the second measurement pattern to obtain a deviation value of wafer bonding. According to the invention, the first measurement pattern and the second measurement pattern are respectively arranged on the first bonding structure and the second bonding structure, so that the bonding deviation value can be directly read after the wafers are bonded, the accurate monitoring of the process is realized, the calibration of a bonding machine is facilitated, and the yield of devices is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer bonding structure and a wafer bonding method.
Background
Micro-Electro-Mechanical Systems (MEMS) technology is known as revolutionary high-tech technology in the 21 st century. At present, highly integrated MEMS devices based on silicon, such as acceleration sensors and gyroscopes, are increasingly used in various fields, such as industry, automobiles, medical care, and military. Among them, the wafer bonding technology is one of the key technologies for the development and practical application of the MEMS technology.
The wafer bonding technology is to combine two wafers together by the mutual reaction of atoms on the surfaces of the two wafers and reaching a certain strength. There are various methods for wafer bonding, such as fusion bonding, thermocompression bonding, low-temperature vacuum bonding, anodic bonding, eutectic bonding, and the like. In the eutectic bonding process, an aluminum bonding layer and a germanium bonding layer are respectively manufactured in bonding areas on the surfaces of two wafers to be bonded, eutectic alloy is formed through the two materials in the process, and the two wafers are connected by using the eutectic alloy as an intermediate layer. The alignment precision of the microscopic patterns on the aluminum bonding layer and the germanium bonding layer is very important in the bonding process, and the device performance can be directly influenced. However, the current bonding process can only perform alignment by recognizing a microscopic pattern by a bonding machine, and cannot directly measure bonding deviation. Therefore, a technician can only estimate whether the wafer bonding meets the process standard by visual inspection based on experience, but the accuracy is low, and the yield of the device cannot be guaranteed.
Therefore, a wafer bonding method is needed, which can accurately measure the alignment accuracy of bonding two wafers, and is helpful to improve the bonding process and increase the yield of devices.
Disclosure of Invention
The invention aims to provide a wafer bonding structure and a wafer bonding method, which are used for solving the problem that the wafer bonding deviation value cannot be accurately measured.
In order to solve the above technical problem, the present invention provides a wafer bonding method, including:
providing a first wafer and a second wafer, wherein a first bonding structure is formed on the first wafer, and a second bonding structure is formed on the second wafer; a first alignment pattern and a first measurement pattern are formed on the first bonding structure, and a second alignment pattern and a second measurement pattern are formed on the second bonding structure;
aligning the first alignment pattern and the second alignment pattern such that the first wafer and the second wafer are aligned and the first measurement pattern corresponds to the second measurement pattern;
connecting the first bonding structure and the second bonding structure to bond the first wafer and the second wafer;
and acquiring the deviation formed by the first measurement pattern and the second measurement pattern to obtain the deviation value of the wafer bonding.
Optionally, in the wafer bonding method, the first measurement pattern includes a first measurement pattern in a first direction and a first measurement pattern in a second direction; the second measurement pattern includes a second measurement pattern of the first direction and a second measurement pattern of the second direction.
Optionally, in the wafer bonding method, the first direction and the second direction are perpendicular to each other.
Optionally, in the wafer bonding method, the first measurement pattern and the second pattern are both scale patterns.
Optionally, in the wafer bonding method, a difference between a division value of the first measurement pattern and a division value of the second measurement pattern is greater than 0 micron and less than 10 microns.
Optionally, in the wafer bonding method, after obtaining a deviation between the first measurement pattern and the second measurement pattern to obtain a deviation value of the wafer bonding, the wafer bonding method further includes: and judging whether the deviation value is within a set range, and if not, calibrating the bonding machine according to the deviation value.
Optionally, in the wafer bonding method, the set range is greater than or equal to 0 micron and less than or equal to 10 microns.
Optionally, in the wafer bonding method, a plurality of first measurement patterns are formed on the first bonding structure; a plurality of the second measurement patterns are formed on the second bonding structure.
Optionally, in the wafer bonding method, a plurality of first bonding structures are formed on the first wafer; a plurality of the second bonding structures are formed on the second wafer.
Based on the same inventive concept, the invention also provides a wafer bonding structure, which comprises:
the wafer structure comprises a first wafer, a second wafer and a third wafer, wherein a first bonding structure is formed on the first wafer, and a first alignment pattern and a first measurement pattern are formed on the first bonding structure;
a second wafer having a second bonding structure formed thereon, the second bonding structure having a second alignment pattern and a second measurement pattern formed thereon;
the first wafer and the second wafer are bonded together through the connection of the first bonding structure and the second bonding structure;
wherein the first and second alignment patterns are aligned, and the first measurement pattern corresponds to the second measurement pattern.
In summary, the present invention provides a wafer bonding structure and method, including: providing a first wafer and a second wafer, wherein a first bonding structure is formed on the first wafer, and a second bonding structure is formed on the second wafer. The first bonding structure is formed with a first alignment pattern and a first measurement pattern, and the second bonding structure is formed with a second alignment pattern and a second measurement pattern. Aligning the first alignment pattern and the second alignment pattern such that the first wafer and the second wafer are aligned and such that the first measurement pattern corresponds to the second measurement pattern. Connecting the first bonding structure and the second bonding structure to bond the first wafer and the second wafer. And acquiring the deviation formed by the first measurement pattern and the second measurement pattern to obtain the deviation value of the wafer bonding. According to the wafer bonding device and the wafer bonding method, the first measuring pattern and the second measuring pattern are respectively arranged on the first bonding structure and the second bonding structure, so that after wafers are bonded, bonding deviation values can be directly read, accurate monitoring of a wafer bonding process is achieved, calibration of a bonding machine is facilitated, the bonding process is improved, and the yield of devices is improved.
Drawings
FIG. 1 is a flow chart of a wafer bonding method according to an embodiment of the present invention;
FIG. 2 is a schematic view of a first wafer structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a second wafer structure according to an embodiment of the invention;
FIG. 4 is a schematic view of a first bond configuration of an embodiment of the present invention;
FIG. 5 is a schematic view of a second bond configuration of an embodiment of the present invention;
FIG. 6 is a schematic view of alignment of a first measurement pattern and a second measurement pattern according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a bonded first wafer and a bonded second wafer according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a eutectic bond structure according to an embodiment of the present invention;
FIG. 9 is a schematic view showing alignment of the first measurement pattern and the second measurement pattern when the bias value is 2 μm according to the embodiment of the present invention;
FIG. 10 is a schematic view showing alignment of a first measurement pattern and a second measurement pattern with a bias value of 3 μm according to an embodiment of the present invention;
wherein the reference numbers indicate:
100-a first wafer; 101-a first bonding structure; 102-a first measurement pattern; 103-a first alignment pattern; 102 a-a first measurement pattern in a first direction; 102 b-a first measurement pattern in a second direction;
200-a second wafer; 201-a second bonding structure; 202-a second measurement pattern; 203-a second alignment pattern; 202 a-a second measurement pattern in a first direction; 202 b-a second measurement pattern in a second direction;
300-eutectic bond; 301-post-bonding alignment pattern;
d1-a division value of the first measurement pattern; d2-a width of the first scale markings; d3-the spacing of two adjacent first scale markings; d4-a division value of the second measurement pattern; d5Width of the second graduation markDegree; d6-the spacing of two adjacent second scale markings.
Detailed Description
The following describes a wafer bonding structure and a wafer bonding method according to the present invention in more detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. Further, the structures illustrated in the drawings are often part of actual structures. In particular, the drawings may have different emphasis points and may sometimes be scaled differently.
Referring to fig. 1, the present embodiment provides a wafer bonding method, including:
step one S10: providing a first wafer and a second wafer, wherein a first bonding structure is formed on the first wafer, and a second bonding structure is formed on the second wafer; the first bonding structure is formed with a first alignment pattern and a first measurement pattern, and the second bonding structure is formed with a second alignment pattern and a second measurement pattern.
Step two S20: aligning the first alignment pattern and the second alignment pattern such that the first wafer and the second wafer are aligned and such that the first measurement pattern corresponds to the second measurement pattern.
Step three S30: connecting the first bonding structure and the second bonding structure to bond the first wafer and the second wafer.
Step four S40: and acquiring the deviation formed by the first measurement pattern and the second measurement pattern to obtain the deviation value of the wafer bonding.
Specifically, referring to fig. 2-8, fig. 2 is a schematic view of a first wafer structure according to an embodiment of the invention. Fig. 3 is a schematic diagram of a second wafer structure according to an embodiment of the invention. Fig. 4 is a schematic structural diagram of a first bonding structure according to an embodiment of the present invention. Fig. 5 is a structural diagram of a second bonding structure according to an embodiment of the present invention. Fig. 6 is a schematic view of alignment of the first measurement pattern and the second measurement pattern according to an embodiment of the present invention. Fig. 7 is a schematic structural diagram of a bonded first wafer and a bonded second wafer according to an embodiment of the invention. Fig. 8 is a schematic diagram of a eutectic bond structure according to an embodiment of the present invention.
Step one S10: as shown in fig. 2 to 5, a first wafer 100 and a second wafer 200 are provided, the first wafer 100 having a first bonding structure 101 formed thereon, and the second wafer 200 having a second bonding structure 201 formed thereon. The first bonding structure 101 has a first measurement pattern 102 and a first alignment pattern 103 formed thereon, and the second bonding structure 201 has a second measurement pattern 202 and a second alignment pattern 203 formed thereon.
In this embodiment, the first wafer 100 has MEMS devices formed thereon, and the second wafer 200 has CMOS integrated circuits formed thereon. The first bonding structure 101 is a germanium layer deposited on the surface of the first wafer 100 in a standard vacuum sputter deposition system, and the germanium layer is patterned by using a photolithography technique and an etching technique to form a first measurement pattern 102 and a first alignment pattern 103. The second bonding structure 201 is an aluminum layer formed on the surface of the second wafer 200, and the aluminum layer is patterned by using a photolithography technique and an etching technique to form a second measurement pattern 202 and a second alignment pattern 203. Wherein the first alignment pattern 103 and the second alignment pattern 203 are alignment marks that a bonding machine needs to identify. The first measurement pattern 102 and the second measurement pattern 202 are both scale patterns, and are used for measuring bonding deviation values of the first wafer 100 and the second wafer 200.
As shown in fig. 4-5, the first measurement pattern 102 includes a first measurement pattern 102a in a first direction and a first measurement pattern 102b in a second direction. The second measurement pattern 202 includes a second measurement pattern 202a of a first direction and a second measurement pattern 202b of a second direction. The present example does not specifically limit the positions of the first and second measurement patterns 102 and 202 with respect to the first or second alignment patterns 103 and 203, but the arrangement directions of the first measurement pattern 102a in the first direction and the first measurement pattern 102b in the second direction are perpendicular to each other. The second measurement pattern 202a of the first direction and the second measurement pattern 202b of the second direction are arranged in a direction perpendicular to each other. In the horizontal coordinate system, the first direction may represent an X direction, and the second direction may represent a Y direction. The X and Y directions are perpendicular to each other. Further, the first measurement pattern 102a of the first direction and the second measurement pattern 202a of the first direction are used for measuring the alignment deviation in the X-axis direction, and the first measurement pattern 102b of the second direction and the second measurement pattern 202b of the second direction are used for measuring the alignment deviation in the Y-direction.
In order to improve the measurement accuracy, a plurality of first measurement patterns 102 are formed on the first bonding structure 101, and a plurality of second measurement patterns 202 are formed on the second bonding structure 201. The number may be 4, 6 or 8, etc. As shown in fig. 4 to 5, the number of the first measurement patterns 102 and the second measurement patterns 202 is 6, and the number of the first measurement patterns 102a in the first direction and the number of the first measurement patterns 102b in the second direction are 3 respectively; the number of the first direction second measurement patterns 202a and the second direction second measurement patterns 202b is 3, respectively. Alternatively, the arrangement between the first measurement patterns 102a in the first direction, the first measurement patterns 102b in the second direction, the second measurement patterns 202a in the first direction, and the second measurement patterns 202b in the second direction includes, but is not limited to, a parallel arrangement. However, it is necessary to ensure that the correspondence relationship as shown in fig. 6 can be formed between the first measurement pattern 102a of the first direction and the second measurement pattern 202a of the first direction and between the first measurement pattern 102b of the second direction and the second measurement pattern 202b of the second direction for reading the offset values in the X direction and the Y direction.
Further, the difference between the division value of the first measurement pattern 102 and the division value of the second measurement pattern 202 ranges from greater than 0 micrometers to less than 10 micrometers. Wherein the greater the measurement accuracy, the smaller the index value difference, and the difference between the index value of the first measurement pattern 102 and the index value of the second measurement pattern 202 is optionally 1 micron, 2 microns, 3 microns, or 9 microns, etc. In this embodiment, the division value of the first measurement pattern 102 is greater than that of the second measurement patternThe graduation of the volume pattern 202 is 1 micrometer. As shown in fig. 6, the index d of the first measurement pattern 1011Is 17 microns, wherein the width d of the first scale markings on the first measurement pattern 10129 microns, the distance d between two adjacent first scale marks3Is 8 microns. The division value d of the second measurement pattern 2014Is 16 microns, wherein the width d of the second scale markings on the second measurement pattern 20155.5 microns, the distance d between two adjacent second scale marks6Is 10.5 microns.
Step two S20: referring to fig. 7 to 8, the first alignment pattern 103 and the second alignment pattern 203 are aligned such that the first wafer 100 and the second wafer 200 are aligned and the first measurement pattern 102 corresponds to the second measurement pattern 202.
Recognizing the first and second alignment patterns 103 and 203 on the first and second bonding structures 101 and 102 using a wafer bonding machine, and aligning the first and second alignment patterns 103 and 203. Then, the first bonding structure 101 and the second bonding structure 102 are attached to each other, so that the first wafer 100 and the second wafer 200 are aligned, and the first measurement pattern 102 corresponds to the second measurement pattern 202. Preferably, the first bonding structure and the second bonding structure are equal in size, which is more favorable for the wafer bonding machine to align the first wafer 100 and the second wafer 200.
Step three S30: connecting the first bonding structure 101 and the second bonding structure 201 to bond the first wafer 100 and the second wafer 200 and form a eutectic bond 300, as shown in fig. 7. Wherein the first alignment pattern 103 and the second alignment pattern 203 are aligned to form a post-bonding alignment pattern 301 shown in fig. 8, and the first measurement pattern 102 corresponds to the second measurement pattern 202.
Further, the method for bonding the first wafer 100 and the second wafer 200 includes, but is not limited to, fusion bonding, thermocompression bonding, low-temperature vacuum bonding, anodic bonding, eutectic bonding, and the like.
Step four S40: and acquiring the deviation formed by the first measurement pattern 102 and the second measurement pattern 103 to obtain the deviation value of the wafer bonding.
In this embodiment, the deviation value in the X-axis direction and the deviation value in the Y-axis direction are respectively read by the infrared control machine. When reading the deviation value, a reading method of a vernier caliper is used, that is, as shown in fig. 6, when the zero scales of the first measurement pattern 102 and the second measurement pattern 202 are aligned, the deviation value is 0. When the zero scales of the first measurement pattern 102 and the second measurement pattern 202 are not aligned, a scale mark with aligned scales is found, and the scale mark m of the second measurement pattern 202 at the position is read, so that a deviation value m × n is obtained, wherein n is a difference value between the division value of the first measurement pattern 102 and the division value of the second measurement pattern 202. In this example, n is 1 micron, and the deviations are 2 microns and 3 microns, respectively, as shown in fig. 9-10.
After obtaining the deviation value of the wafer bonding, the wafer bonding method further includes: and judging whether the deviation value is within a set range, and if not, calibrating the bonding machine according to the deviation value. Wherein the set range is greater than or equal to 0 micrometers and less than or equal to 10 micrometers. That is, the deviation conforming to the set range means that both the deviation value in the X-axis direction and the deviation value in the Y-axis direction are less than or equal to 10 μm.
Based on the same inventive concept, the present embodiment further provides a wafer bonding structure, where the wafer bonding structure includes: the wafer structure comprises a first wafer 100, wherein a first bonding structure 101 is formed on the first wafer 100, and a first alignment pattern 103 and a first measurement pattern 102 are formed on the first bonding structure 101. A second wafer 200, wherein a second bonding structure 201 is formed on the second wafer 200, and a second alignment pattern 203 and a second measurement pattern 202 are formed on the second bonding structure 201. By connecting the first bonding structure 101 and the second bonding structure 201, the first wafer 100 and the second wafer 200 are bonded together. Wherein the first alignment pattern 103 and the second alignment pattern 102 are aligned, and the first measurement pattern corresponds to the second measurement pattern 202 of 102.
Preferably, a plurality of first bonding structures 101 and second bonding structures 201 may be formed on the first wafer 100 and the second wafer 200, respectively, to ensure that the first wafer 100 and the second wafer 200 are bonded more stably.
In summary, in the wafer bonding structure and the wafer bonding method provided by this embodiment, the first measurement pattern and the second measurement pattern are respectively added to the first bonding structure and the second bonding structure, so that after wafer bonding, a bonding deviation value can be directly read, accurate monitoring of a wafer bonding process is realized, improvement of the bonding process is facilitated, and yield of devices is ensured.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A wafer bonding method is characterized by comprising the following steps:
providing a first wafer and a second wafer, wherein a first bonding structure is formed on the first wafer, and a second bonding structure is formed on the second wafer; a first alignment pattern and a first measurement pattern are formed on the first bonding structure, and a second alignment pattern and a second measurement pattern are formed on the second bonding structure;
aligning the first alignment pattern and the second alignment pattern such that the first wafer and the second wafer are aligned and the first measurement pattern corresponds to the second measurement pattern;
connecting the first bonding structure and the second bonding structure to bond the first wafer and the second wafer;
and acquiring the deviation formed by the first measurement pattern and the second measurement pattern to obtain the deviation value of the wafer bonding.
2. The wafer bonding method according to claim 1, wherein the first measurement pattern comprises a first measurement pattern in a first direction and a first measurement pattern in a second direction; the second measurement pattern includes a second measurement pattern of the first direction and a second measurement pattern of the second direction.
3. The wafer bonding method of claim 2, wherein the first direction and the second direction are perpendicular to each other.
4. The wafer bonding method according to claim 1, wherein the first measurement pattern and the second pattern are both scale patterns.
5. The wafer bonding method according to claim 4, wherein a difference between a division value of the first measurement pattern and a division value of the second measurement pattern is in a range of more than 0 micron and less than 10 microns.
6. The wafer bonding method as claimed in claim 1, wherein after obtaining the deviation between the first measurement pattern and the second measurement pattern to obtain the deviation value of the wafer bonding, the wafer bonding method further comprises: and judging whether the deviation value is within a set range, and if not, calibrating the bonding machine according to the deviation value.
7. The wafer bonding method according to claim 6, wherein the predetermined range is greater than or equal to 0 μm and less than or equal to 10 μm.
8. The wafer bonding method of claim 1, wherein a plurality of the first measurement patterns are formed on the first bonding structure; a plurality of the second measurement patterns are formed on the second bonding structure.
9. The wafer bonding method of claim 1, wherein a plurality of the first bonding structures are formed on the first wafer; a plurality of the second bonding structures are formed on the second wafer.
10. A wafer bonding structure, comprising:
the wafer structure comprises a first wafer, a second wafer and a third wafer, wherein a first bonding structure is formed on the first wafer, and a first alignment pattern and a first measurement pattern are formed on the first bonding structure;
a second wafer having a second bonding structure formed thereon, the second bonding structure having a second alignment pattern and a second measurement pattern formed thereon;
the first wafer and the second wafer are bonded together through the connection of the first bonding structure and the second bonding structure;
wherein the first and second alignment patterns are aligned, and the first measurement pattern corresponds to the second measurement pattern.
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| CN112201572A (en) * | 2020-09-18 | 2021-01-08 | 武汉新芯集成电路制造有限公司 | Method for stacking multilayer wafers and system for stacking multilayer wafers |
| WO2022057007A1 (en) * | 2020-09-18 | 2022-03-24 | 武汉新芯集成电路制造有限公司 | Method for stacking multiple layers of wafers, and system for stacking multiple layers of wafers |
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