CN111590214A - Photovoltaic cell cutting method and cell manufactured by same - Google Patents
Photovoltaic cell cutting method and cell manufactured by same Download PDFInfo
- Publication number
- CN111590214A CN111590214A CN202010396326.6A CN202010396326A CN111590214A CN 111590214 A CN111590214 A CN 111590214A CN 202010396326 A CN202010396326 A CN 202010396326A CN 111590214 A CN111590214 A CN 111590214A
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- cutting
- laser
- photovoltaic cell
- cutting line
- battery
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
- B23K26/703—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
The invention discloses a photovoltaic cell slice cutting method, which comprises the following steps of firstly, placing a cell slice to be cut in a laser scribing area; secondly, forming a first cutting line on the edge of the cutting position of the cell slice by using a first laser; thirdly, using a second laser, locally heating the light spot of the second laser along the front position of the crack of the first cutting line, moving and extending along the direction of the first cutting line and in the direction far away from the edge, and cooling the heated position at the same time, wherein the method has the advantages that the laser cutting temperature can be obviously reduced, no dust is generated because no gasification or melting occurs in the cutting process, no slag chips or microcracks exist on the cutting fracture surface, the mechanical properties of the battery and the assembly are improved, namely, the mechanical strength is improved, and for the situation of the amorphous silicon film layer, the amorphous silicon film layer is prevented from being damaged, and the efficiency loss of the battery piece is reduced; the invention also provides a cell slice which is obtained by cutting by adopting the photovoltaic cell slice cutting method.
Description
Technical Field
The invention relates to the technical field of battery piece cutting, in particular to a photovoltaic battery piece cutting method and a battery piece manufactured by the method.
Background
In the photovoltaic market, the half-sheet assembly is popular with customers due to small electrical loss and high assembly power and efficiency, and rapidly occupies the market. The half-chip assembly packaging is to cut the whole cell into half-chips by laser, most of the currently adopted laser is n seconds of infrared, the temperature is over 1000 ℃, the contacted silicon is directly gasified or melted, so that a V-shaped groove is formed on the surface of a silicon chip, and then the half-chip assembly packaging is mechanically broken into half-chips. According to the prior art, the efficiency of surrounding batteries is often affected due to the excessively high cutting temperature, so that the packaging power of the assembly is reduced; particularly, for the Hit battery, the amorphous silicon film layer of the Hit battery is basically damaged at the temperature of over 220 ℃, and the efficiency of the Hit battery is reduced more by using the existing laser cutting method. Moreover, the existing cutting method can cause silicon materials to form a large amount of dust in the cutting process, and the dust has adverse effect on the working environment around equipment.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the method has the advantages that the defects of the prior art are overcome, the laser cutting temperature can be obviously reduced, the damage of high temperature to the battery is reduced, the reduction of the battery efficiency grade is reduced, and the power of the half-piece assembly is improved; particularly, the battery sensitive to temperature, such as a Hit battery, is facilitated, and the efficiency is improved more obviously; because no gasification or melting occurs in the cutting process, no dust is generated, and no slag chips or microcracks exist on the cutting fracture surface, the mechanical properties of the battery and the assembly are improved, namely the mechanical strength is improved, and for the situation of the amorphous silicon film layer, the amorphous silicon film layer is prevented from being damaged, and the efficiency loss of the battery piece is reduced; the half-sheet assembly is obtained by cutting the photovoltaic cell sheet by the photovoltaic cell sheet cutting method.
The technical scheme adopted by the invention is as follows: provided is a photovoltaic cell slice cutting method, which comprises the following steps:
firstly, placing a battery piece to be cut in a laser scribing area;
secondly, forming a first cutting line on the edge of the cutting position of the cell slice by using a first laser;
and thirdly, using a second laser, locally heating the spot of the second laser along the position in front of the crack of the first cutting line, moving and extending along the direction of the first cutting line and in the direction far away from the edge, and cooling the heated position.
After adopting the technical scheme, compared with the prior art, the invention has the following advantages: because the cutting principle is different, the cutting principle of the invention uses a temperature gradient, specifically, a light spot of a second laser is locally heated at a position in front of a crack along a first cutting line, and the locally heated position is cooled to reduce the temperature of the laser reaching the surface of the battery, so that a non-uniform temperature field and a temperature gradient are formed at the position of the light spot, the temperature gradient induces the generation of thermal stress, so that the crack cracks open the battery piece along the moving direction of the light spot, the light spot moves along the direction of the first cutting line in the direction far away from the edge of the first cutting line, the position where the light spot goes is locally heated, the heated position and the adjacent unheated position of the battery piece have different temperatures, so that a temperature field is formed, different thermal stresses (thermal expansion and contraction) are formed by different temperatures, different temperature fields can cause different tensile stress and different compressive stress at different places, thereby achieving the purpose of cutting the battery piece by utilizing the temperature gradient.
Therefore, the laser cutting temperature can be obviously reduced, the damage of high temperature to the battery is reduced, the reduction of the efficiency grade of the battery is reduced, and the power of the half-chip assembly is improved; particularly, the battery sensitive to temperature, such as a Hit battery, is facilitated, and the efficiency is improved more obviously; because no gasification or melting occurs in the cutting process, no dust is generated, and no slag chips or microcracks exist on the cutting fracture surface, the mechanical properties of the battery and the assembly are improved, namely the mechanical strength is improved.
Preferably, the length of the first cutting line is in a range of (0, 5 cm), and the depth of the first cutting line is in a range of [ 20% and 100% of the thickness of the cell slice), and the improvement is favorable for cutting.
Preferably, the length of the first cutting line cutting seam is 2-3 cm, preferably 2, 2.5 or 3cm, which is beneficial to cutting, namely obtaining a cutting stress and easy to cut.
Preferably, the cutting depth of the first cutting line is 40-60% of the thickness of the cell, preferably 40%, 50% or 60%, which is beneficial to realizing no damage to the silicon wafer during cutting and splitting.
Preferably, in the fourth step, the cutting position is cooled by air cooling, and the method is simple.
Preferably, the cutting position is cooled by liquid cooling in the fourth step, so that the cooling speed is higher and the effect is good.
Preferably, the first laser is used for cutting the front side or the back side of the cell piece, and the laser cutting method is very suitable for cutting the cell piece with the power generation structure on both sides, such as a heterojunction cell piece.
Preferably, the cutting temperature of the second laser is lower than 200 ℃, which has the advantages of lower temperature and good cutting performance.
The technical scheme adopted by the invention is as follows: the photovoltaic cell piece is obtained by cutting through the cutting method.
After adopting the technical scheme, compared with the prior art, the invention has the following advantages: the photovoltaic cell slice is obtained by cutting with the method, the cut part is the cell slice, the cutting fracture surface of the cell slice has no slag chips or microcracks, the mechanical property of the cell slice is improved, namely, the mechanical strength is improved, meanwhile, the amorphous silicon film layer of the cell slice is prevented from being damaged, the efficiency loss of the cell slice is reduced, namely, the reduction of the efficiency grade of the cell is reduced, and the power of the cell slice is improved.
Drawings
Fig. 1 is a schematic diagram illustrating a method for cutting a photovoltaic cell according to the present invention.
Fig. 2 is a schematic structural diagram of a photovoltaic cell sheet in a state that a first cutting line is completed.
Fig. 3 is a schematic structural diagram of a photovoltaic cell piece cut into two parts.
Detailed Description
The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.
The figures are purely diagrammatic and not drawn to scale.
It will be understood by those skilled in the art that in the present disclosure, the terms "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "stone", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, which are merely for convenience in describing and simplifying the description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus the above-described terms should not be construed as limiting the present invention.
The invention provides a photovoltaic cell slice cutting method, which comprises the following steps:
firstly, placing a battery piece to be cut in a laser scribing area;
secondly, forming a first cutting line on the edge of the cutting position of the cell slice by using a first laser;
and thirdly, using a second laser, locally heating the spot of the second laser along the position in front of the crack of the first cutting line, moving and extending along the direction of the first cutting line and in the direction far away from the edge, and cooling the heated position.
The length of the first cutting line is in a half-open and half-closed interval (0, 5 cm), and the depth is in a half-closed and half-open interval (20 percent, 100 percent) of the thickness of the cell.
Example one
A photovoltaic cell slice cutting method comprises the following steps:
firstly, placing a battery piece to be cut in a laser scribing area;
secondly, forming a first cutting line 1 on the edge of the battery at the cutting position of the battery piece by using a first laser, wherein the length of a crack of the first cutting line 1 is 0.3cm, and the cutting depth is 70% of the thickness of the battery piece;
thirdly, using a second laser, locally heating the spot in front of the crack along the first cutting line 1, and forming an uneven temperature field and a temperature gradient at the spot position according to the principle shown in fig. 1, wherein the temperature gradient induces the generation of thermal stress, so that the crack cracks the cell along the direction of the movement of the spot;
when light spots act on the silicon wafer, the cutting position is cooled by air cooling so as to reduce the temperature of the laser reaching the surface of the cell, in the embodiment, the temperature of the second laser cutting is lower than 200 ℃, and the cell is split into two half pieces through a temperature gradient.
Cooling the cutting site using air cooling, such as blow cooling.
Or cooling the cutting site using liquid cooling, such as liquid cooling.
Example two
A photovoltaic cell slice cutting method comprises the following steps:
firstly, placing a battery piece to be cut in a laser scribing area;
secondly, forming a first cutting line 1 at the edge of the battery at the cutting position of the battery piece by using a first laser, wherein the length of a crack of the first cutting line 1 is 2.5cm, and the cutting depth is 50% of the thickness of the battery piece;
thirdly, using a second laser, locally heating the spot in front of the crack along the first cutting line 1, and forming an uneven temperature field and a temperature gradient at the spot position according to the principle shown in fig. 1, wherein the temperature gradient induces the generation of thermal stress, so that the crack cracks the cell along the direction of the movement of the spot;
when light spots act on the silicon wafer, the cutting position is cooled by liquid cooling so as to reduce the temperature of the laser reaching the surface of the cell, in the embodiment, the temperature of the second laser cutting is lower than 200 ℃, and the cell is split into two half pieces through temperature gradient.
Cooling the cutting site using air cooling, such as blow cooling.
Or cooling the cutting site using liquid cooling, such as liquid cooling.
EXAMPLE III
A photovoltaic cell slice cutting method comprises the following steps:
firstly, placing a battery piece to be cut in a laser scribing area;
secondly, forming a first cutting line 1 on the edge of the battery at the cutting position of the battery piece by using a first laser, wherein the length of a crack of the first cutting line 1 is 3cm, and the cutting depth is 60% of the thickness of the battery piece;
thirdly, using a second laser, locally heating the spot in front of the crack along the first cutting line 1, forming an uneven temperature field and a temperature gradient in the spot position, and inducing thermal stress by the temperature gradient so as to crack the cell along the moving direction of the spot;
and when the light spot acts on the silicon chip, cooling the cutting position by air cooling so as to reduce the temperature of the laser reaching the surface of the battery, wherein the temperature of the second laser cutting is lower than 200 ℃, and the battery is split into two half pieces by temperature gradient.
Cooling the cutting site using air cooling, such as blow cooling.
Or cooling the cutting site using liquid cooling, such as liquid cooling.
Example four
The main difference from other embodiments is that the first laser cuts a first cutting line on the back surface of the cell, namely the following steps are included:
firstly, placing a battery piece to be cut in a laser scribing area;
secondly, forming a first cutting line 1 on the edge of the back side of the battery at the cutting position of the battery piece by using a first laser, wherein the length of a crack of the first cutting line 1 is 4cm, and the cutting depth is 65% of the thickness of the battery piece;
thirdly, using a second laser, locally heating the spot in front of the crack along the first cutting line 1, forming an uneven temperature field and a temperature gradient in the spot position, and inducing thermal stress by the temperature gradient so as to crack the cell along the moving direction of the spot;
and when the light spot acts on the silicon chip, cooling the cutting position by air cooling so as to reduce the temperature of the laser reaching the surface of the battery, wherein the temperature of the second laser cutting is lower than 200 ℃, and the battery is split into two half pieces by temperature gradient.
Cooling the cutting site using air cooling, such as blow cooling.
Or cooling the cutting site using liquid cooling, such as liquid cooling.
The invention also provides a cell slice, which is obtained by cutting the photovoltaic cell slice by adopting the photovoltaic cell slice cutting method.
In this example, cutting a photovoltaic cell will result in two half-pieces, each half-piece being a cell.
The cutting fracture surface of the battery piece obtained by cutting has no slag chips or microcracks, and meanwhile, for the situation of the amorphous silicon film layer, the amorphous silicon film layer of the battery piece is protected to a certain extent, so that the amorphous silicon film layer is prevented from being damaged, namely for the situation of the amorphous silicon film layer, the battery piece has a better amorphous silicon film layer.
The foregoing is illustrative of embodiments of the present invention and is not to be construed as limiting the claims. The invention is not limited to the above embodiments, which allow variations, all within the scope of the independent claims of the invention.
Claims (9)
1. A photovoltaic cell slice cutting method is characterized in that: the method comprises the following steps:
firstly, placing a battery piece to be cut in a laser scribing area;
secondly, forming a first cutting line on the edge of the cutting position of the cell slice by using a first laser;
and thirdly, using a second laser, locally heating the spot of the second laser along the position in front of the crack of the first cutting line, moving and extending along the direction of the first cutting line and in the direction far away from the edge, and cooling the heated position.
2. The method for cutting a photovoltaic cell sheet according to claim 1, wherein: the length of the first cutting line is in the range of (0, 5 cm), and the depth is in the range of [ 20% and 100% of the thickness of the cell.
3. The photovoltaic cell sheet cutting method according to claim 2, characterized in that: the length of the first cutting line cutting seam is 2-3 cm.
4. The photovoltaic cell sheet cutting method according to claim 2, characterized in that: the cutting depth of the first cutting line is 40-60%.
5. The method for cutting a photovoltaic cell sheet according to claim 1, wherein: and in the third step, the cutting position is cooled by air cooling.
6. The method for cutting a photovoltaic cell sheet according to claim 1, wherein: and in the third step, the cutting position is cooled by liquid cooling.
7. The method for cutting a photovoltaic cell sheet according to claim 1, wherein: and the first laser cuts the front side or the back side of the cell piece.
8. The method for cutting a photovoltaic cell sheet according to claim 1, wherein: the cutting temperature of the second laser is lower than 200 ℃.
9. A battery piece, characterized in that: obtained by cutting by the photovoltaic cell sheet cutting method according to any one of claims 1 to 8.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010396326.6A CN111590214A (en) | 2020-05-12 | 2020-05-12 | Photovoltaic cell cutting method and cell manufactured by same |
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| CN202010396326.6A CN111590214A (en) | 2020-05-12 | 2020-05-12 | Photovoltaic cell cutting method and cell manufactured by same |
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| CN111590214A true CN111590214A (en) | 2020-08-28 |
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| CN112599442A (en) * | 2020-12-01 | 2021-04-02 | 无锡奥特维科技股份有限公司 | Battery piece splitting method |
| CN112736160A (en) * | 2020-12-31 | 2021-04-30 | 三江学院 | Preparation method and application of battery piece |
| CN112846538A (en) * | 2021-01-07 | 2021-05-28 | 卡门哈斯激光科技（苏州）有限公司 | Solar cell low-loss cutting device and method |
| CN112847465A (en) * | 2020-12-29 | 2021-05-28 | 安徽华晟新能源科技有限公司 | Method for cutting and slicing solar cell |
| CN112846537A (en) * | 2021-01-07 | 2021-05-28 | 卡门哈斯激光科技（苏州）有限公司 | Laser low-loss cutting device and method for solar cell |
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| CN114346476A (en) * | 2022-01-30 | 2022-04-15 | 苏州沃特维自动化系统有限公司 | Structure and process method for cutting battery piece at low temperature without damage |
| CN114473218A (en) * | 2022-04-01 | 2022-05-13 | 深圳光远智能装备股份有限公司 | Silicon wafer chamfering process for photovoltaic industry |
| CN114589413A (en) * | 2022-04-14 | 2022-06-07 | 深圳光远智能装备股份有限公司 | Process method for thermal stress nondestructive scribing of brittle material in photovoltaic industry |
| CN114765227A (en) * | 2020-12-30 | 2022-07-19 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of photovoltaic module |
| CN114765228A (en) * | 2020-12-30 | 2022-07-19 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of photovoltaic module |
| CN114765232A (en) * | 2020-12-30 | 2022-07-19 | 苏州阿特斯阳光电力科技有限公司 | Battery piece and preparation method thereof, photovoltaic module with battery piece and preparation method |
| CN114932324A (en) * | 2022-05-12 | 2022-08-23 | 波粒（北京）光电科技有限公司 | Single-laser solar cell nondestructive cutting method, controller and device |
| CN115117193A (en) * | 2021-03-19 | 2022-09-27 | 黄河水电西宁太阳能电力有限公司 | Nondestructive splitting method for reducing efficiency loss of solar cell |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020047479A (en) * | 2000-12-13 | 2002-06-22 | 김경섭 | Laser cutting method for non-metallic materials |
| US20030146197A1 (en) * | 2002-02-02 | 2003-08-07 | Baek-Kyun Jeon | Method and apparatus for cutting nonmetallic substrate |
| CN101444875A (en) * | 2008-12-08 | 2009-06-03 | 浙江工业大学 | Cutting method of fragile material substrate |
| JP2011011972A (en) * | 2009-06-05 | 2011-01-20 | Lemi Ltd | Apparatus for cutting brittle material and method of cutting brittle material |
| CN103249686A (en) * | 2011-12-09 | 2013-08-14 | 罗泽系统株式会社 | Strengthened glass substrate cutting method |
| CN110335922A (en) * | 2019-06-20 | 2019-10-15 | 成都珠峰永明科技有限公司 | The cutting method of solar energy half battery |
| CN110649128A (en) * | 2019-09-12 | 2020-01-03 | 中节能太阳能科技（镇江）有限公司 | Preparation method of high-efficiency heterojunction battery piece |
| CN110808310A (en) * | 2018-08-06 | 2020-02-18 | 君泰创新（北京）科技有限公司 | Method for reducing cutting efficiency loss of solar cell chip and photovoltaic module |
-
2020
- 2020-05-12 CN CN202010396326.6A patent/CN111590214A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020047479A (en) * | 2000-12-13 | 2002-06-22 | 김경섭 | Laser cutting method for non-metallic materials |
| US20030146197A1 (en) * | 2002-02-02 | 2003-08-07 | Baek-Kyun Jeon | Method and apparatus for cutting nonmetallic substrate |
| CN1435291A (en) * | 2002-02-02 | 2003-08-13 | 三星电子株式会社 | Method and device for cutting non-metal substrate |
| CN101444875A (en) * | 2008-12-08 | 2009-06-03 | 浙江工业大学 | Cutting method of fragile material substrate |
| JP2011011972A (en) * | 2009-06-05 | 2011-01-20 | Lemi Ltd | Apparatus for cutting brittle material and method of cutting brittle material |
| CN103249686A (en) * | 2011-12-09 | 2013-08-14 | 罗泽系统株式会社 | Strengthened glass substrate cutting method |
| CN110808310A (en) * | 2018-08-06 | 2020-02-18 | 君泰创新（北京）科技有限公司 | Method for reducing cutting efficiency loss of solar cell chip and photovoltaic module |
| CN110335922A (en) * | 2019-06-20 | 2019-10-15 | 成都珠峰永明科技有限公司 | The cutting method of solar energy half battery |
| CN110649128A (en) * | 2019-09-12 | 2020-01-03 | 中节能太阳能科技（镇江）有限公司 | Preparation method of high-efficiency heterojunction battery piece |
Cited By (17)
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| CN112599442A (en) * | 2020-12-01 | 2021-04-02 | 无锡奥特维科技股份有限公司 | Battery piece splitting method |
| CN112847465A (en) * | 2020-12-29 | 2021-05-28 | 安徽华晟新能源科技有限公司 | Method for cutting and slicing solar cell |
| CN114765227A (en) * | 2020-12-30 | 2022-07-19 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of photovoltaic module |
| CN114765232A (en) * | 2020-12-30 | 2022-07-19 | 苏州阿特斯阳光电力科技有限公司 | Battery piece and preparation method thereof, photovoltaic module with battery piece and preparation method |
| CN114765228A (en) * | 2020-12-30 | 2022-07-19 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of photovoltaic module |
| CN112736160A (en) * | 2020-12-31 | 2021-04-30 | 三江学院 | Preparation method and application of battery piece |
| CN112846537A (en) * | 2021-01-07 | 2021-05-28 | 卡门哈斯激光科技（苏州）有限公司 | Laser low-loss cutting device and method for solar cell |
| CN112846538A (en) * | 2021-01-07 | 2021-05-28 | 卡门哈斯激光科技（苏州）有限公司 | Solar cell low-loss cutting device and method |
| CN115117193A (en) * | 2021-03-19 | 2022-09-27 | 黄河水电西宁太阳能电力有限公司 | Nondestructive splitting method for reducing efficiency loss of solar cell |
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| CN113213216A (en) * | 2021-05-20 | 2021-08-06 | 浙江绍兴中环印染有限公司 | Quick rolling machine of printing and dyeing cloth |
| CN113664365A (en) * | 2021-09-18 | 2021-11-19 | 苏州沃特维自动化系统有限公司 | Water-free nondestructive cutting process and device for solar cell |
| CN113664365B (en) * | 2021-09-18 | 2024-01-26 | 苏州沃特维自动化系统有限公司 | Water-free and nondestructive cutting process and device for solar cell |
| CN114346476A (en) * | 2022-01-30 | 2022-04-15 | 苏州沃特维自动化系统有限公司 | Structure and process method for cutting battery piece at low temperature without damage |
| CN114473218A (en) * | 2022-04-01 | 2022-05-13 | 深圳光远智能装备股份有限公司 | Silicon wafer chamfering process for photovoltaic industry |
| CN114589413A (en) * | 2022-04-14 | 2022-06-07 | 深圳光远智能装备股份有限公司 | Process method for thermal stress nondestructive scribing of brittle material in photovoltaic industry |
| CN114932324A (en) * | 2022-05-12 | 2022-08-23 | 波粒（北京）光电科技有限公司 | Single-laser solar cell nondestructive cutting method, controller and device |
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Application publication date: 20200828 |