CN111584507B - Display panel, manufacturing method thereof and display terminal - Google Patents

Display panel, manufacturing method thereof and display terminal Download PDF

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Publication number
CN111584507B
CN111584507B CN202010402985.6A CN202010402985A CN111584507B CN 111584507 B CN111584507 B CN 111584507B CN 202010402985 A CN202010402985 A CN 202010402985A CN 111584507 B CN111584507 B CN 111584507B
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light emitting
layer
emitting device
conductive
display panel
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CN111584507A (en
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卢马才
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The display panel comprises a substrate base plate, a thin film transistor array layer, a conductive electrode layer, a pixel definition layer and a plurality of light emitting devices, wherein the pixel definition layer is provided with a plurality of grooves which are arranged in an array mode, the grooves expose a part of conductive electrodes positioned on the conductive electrode layer, the light emitting devices are respectively adhered to the pixel definition layer between two adjacent grooves so as to preliminarily fix the light emitting devices before binding, and then the light emitting devices are bound and connected with the conductive electrodes through conductive materials filled into microcavity structures formed between the light emitting devices and the two adjacent grooves, so that poor binding of the light emitting devices is prevented, and repair cost is reduced.

Description

Display panel, manufacturing method thereof and display terminal
Technical Field
The invention relates to the technical field of display, in particular to a display panel, a manufacturing method thereof and a display terminal.
Background
In the process of manufacturing a Micro light emitting diode (Micro light emitting diode, micro LED) display panel, micro LED chips need to be transferred from an original substrate to a receiving substrate to be arranged into an array, wherein processes of precisely transferring, binding and the like of a large number of Micro LED chips are involved.
In the currently known binding connection scheme of the Micro LED chip and the conductive electrode on the receiving substrate, most methods are to transfer the Micro LED chip to the receiving substrate and to bond the Micro LED chip with a pre-patterned binding material on the receiving substrate, the binding material is mainly made of AuSn, inSn and other similar low-melting-point metals, the binding process involves solid-liquid-solid phase conversion of the binding material, is complex, and is easy to cause poor binding of the Micro LED chip and the problem of increased repairing cost.
In summary, the conventional Micro light emitting diode display panel has the problems of poor binding and increased repair cost in the process of transferring the Micro LED chip to the receiving substrate. Therefore, it is necessary to provide a display panel, a manufacturing method thereof and a display terminal to improve the defect.
Disclosure of Invention
The embodiment of the disclosure provides a display panel, a manufacturing method thereof and a display terminal, which are used for solving the problems that a Micro light emitting diode display panel has poor binding and the repair cost is increased in the process of transferring and binding Micro LED chips.
The embodiment of the disclosure provides a display panel, comprising:
a substrate base;
the thin film transistor array layer is arranged on the substrate base plate and comprises a plurality of thin film transistors and a plurality of signal wires which are arranged in an array manner;
the conductive electrode layer is arranged on one side, far away from the substrate, of the thin film transistor array layer and comprises a plurality of patterned conductive electrodes, and the conductive electrodes are respectively connected with the thin film transistor and the signal wiring;
the pixel definition layer is arranged on one side, far away from the substrate, of the thin film transistor array layer and covers the conductive electrode layer, a plurality of grooves which are arranged in an array mode are formed in the pixel definition layer, and part of the conductive electrodes are exposed out of the grooves; and
the light-emitting devices are adhered to the pixel definition layer between two adjacent grooves, a microcavity structure is formed between each light-emitting device and two adjacent grooves, and the light-emitting devices are electrically connected with the conductive electrodes through conductive materials filled in the microcavity structure.
According to an embodiment of the disclosure, the light emitting device is located in the orthographic projection area of the plane of the substrate on both sides of the orthographic projection area of the plane of the substrate.
According to an embodiment of the present disclosure, the height of the portion of the pixel defining layer to which the light emitting device is attached is smaller than the height of the portion to which the light emitting device is not attached.
According to an embodiment of the present disclosure, the shape of the opening of the recess in the plane of the pixel defining layer includes a rectangle, a circle, or a circle.
According to an embodiment of the present disclosure, the opening of the groove on the plane where the pixel defining layer is located is in a shape of a loop, a support pillar is disposed in the groove, and the light emitting device is adhered to the support pillar on a side close to the substrate.
According to an embodiment of the present disclosure, the height of the support post is the same as the height of the pixel defining layer to which the light emitting device is attached, and the orthographic projection area of the light emitting device on the plane of the substrate covers the orthographic projection area of the support post on the plane of the substrate.
According to an embodiment of the disclosure, the light emitting device is a mini LED chip or a micro LED chip.
The embodiment of the disclosure provides a display terminal, which comprises a terminal main body and the display panel, wherein the display panel is arranged on the terminal main body.
The embodiment of the disclosure also provides a manufacturing method of the display panel, which comprises the following steps:
providing a substrate, forming a thin film transistor array layer and a conductive electrode layer which are stacked on the substrate, wherein the conductive electrode layer comprises a plurality of patterned conductive electrodes;
coating an organic photoresist material on the thin film transistor array layer, and etching the organic photoresist material to form a pixel definition layer and a plurality of grooves which are arranged at intervals and expose part of the pixel electrode;
before the pixel definition layer is not cured, transferring a plurality of light emitting devices to the organic photoresist material to enable the light emitting devices to be bonded with the pixel definition layer between two adjacent grooves, wherein a microcavity structure is formed between each light emitting device and each adjacent groove;
filling conductive materials in the grooves, and pre-curing the conductive materials to electrically connect the light-emitting device with the conductive electrodes through the conductive materials;
detecting and repairing the light emitting device transferred onto the substrate, and curing the pixel definition layer and the conductive material again after the detection and repair are completed; and
and forming an encapsulation layer covering the light emitting device on the pixel definition layer.
According to one embodiment of the present disclosure, the conductive material comprises nano conductive silver paste.
The beneficial effects of the embodiment of the disclosure are that: according to the embodiment of the disclosure, the grooves which are arranged in an array and expose part of the conductive electrodes are formed on the pixel definition layer, the light-emitting device is adhered to the pixel definition layer between two adjacent grooves by using the viscosity of the material of the pixel definition layer in an uncured state, so that the light-emitting device is preliminarily fixed before being bound, and then the light-emitting device and the conductive electrodes are bound and connected by filling the conductive material into the microcavity structure formed between the light-emitting device and the two adjacent grooves, so that the occurrence of poor binding of the light-emitting device is prevented, and the repairing cost is reduced.
Drawings
In order to more clearly illustrate the embodiments or the technical solutions in the prior art, the following description will briefly introduce the drawings that are needed in the embodiments or the description of the prior art, it is obvious that the drawings in the following description are only some embodiments disclosed, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic plan view of a display panel according to an embodiment of the disclosure;
FIG. 2 is a schematic cross-sectional view of the display panel of FIG. 1 along the direction A-A;
FIG. 3 is a schematic view of a plane in which a pixel definition layer is located before binding a light emitting device;
FIG. 4 is a schematic view of a plane of a pixel definition layer after binding a light emitting device;
FIG. 5 is a schematic cross-sectional view of another display panel according to an embodiment of the disclosure along the direction A-A in FIG. 1;
FIG. 6 is a schematic view of a plane of the pixel definition layer before binding the light emitting device in FIG. 5;
FIG. 7 is a schematic view of a plane of the pixel defining layer of the light emitting device of FIG. 5 after binding;
fig. 8 is a schematic structural diagram of a display terminal according to an embodiment of the disclosure;
FIG. 9 is a flowchart illustrating a method for fabricating a display panel according to an embodiment of the disclosure;
fig. 10A to 10H are schematic structural diagrams of a display panel corresponding to a manufacturing method according to an embodiment of the disclosure.
Detailed Description
The following description of the embodiments refers to the accompanying drawings, which illustrate specific embodiments in which the disclosure may be practiced. The directional terms mentioned in this disclosure, such as [ up ], [ down ], [ front ], [ back ], [ left ], [ right ], [ inside ], [ outside ], [ side ], etc., are merely referring to the directions of the attached drawings. Accordingly, directional terms are used to illustrate and understand the present disclosure, and are not intended to limit the present disclosure. In the drawings, like elements are designated by like reference numerals.
The present disclosure is further described below with reference to the drawings and specific examples.
An embodiment of the present disclosure provides a display panel, and in detail, fig. 1 to 4 are described below, wherein fig. 1 is a schematic plan view of the display panel provided in the embodiment of the present disclosure, fig. 2 is a schematic sectional structure of the display panel along A-A direction in fig. 1, fig. 3 is a schematic plan view of a pixel defining layer, and fig. 4 is a schematic plan view of a pixel defining layer after a light emitting device is bonded.
The display panel 1 includes a substrate 11, a thin film transistor array layer 12 disposed on the substrate 11, a conductive electrode layer 13 disposed on a side of the thin film transistor array layer 12 away from the substrate 11, a pixel defining layer 14 disposed on the thin film transistor array layer 12 and covering the conductive electrode layer 13, a plurality of light emitting devices 15 arrayed on the pixel defining layer 14, and a packaging layer 18 disposed on the pixel defining layer 14 and covering the plurality of light emitting devices 15.
In the embodiment of the present disclosure, the light emitting device 15 is a Micro LED chip, that is, the display panel 1 is a Micro LED display panel. Of course, in some embodiments, the light emitting device 15 may be a light emitting device such as a Mini LED chip, which is not limited herein.
As shown in fig. 2, the tft array layer 12 includes an insulating layer 121, a plurality of tfts 122 arranged in an array, and a passivation protection layer 123 disposed on the insulating layer 121, the tfts 122 include an active layer 1221, a gate insulating layer 1222, a gate line layer 1223, and source and drain electrodes 1224 disposed on the insulating layer 121, the tft array layer 12 further includes a plurality of signal traces 124, and the plurality of signal traces 124 are disposed on the same layer as the gate line layer 1223 or the drain electrode 1224, respectively. The conductive electrode layer 13 includes a plurality of patterned conductive electrodes 131, and the conductive electrodes 131 are respectively connected to the drain electrode 1224 of the thin film transistor 122 and the signal trace 124.
In the embodiment of the disclosure, the pixel defining layer 14 is provided with a plurality of grooves 143 arranged in an array, and the grooves 143 penetrate through the pixel defining layer 14 and expose a portion of the conductive electrode 131 at the bottom of the pixel defining layer 14. Each two adjacent grooves 143 of the plurality of grooves 143 form a groove group corresponding to one light emitting device 15, and the plurality of groove groups are arranged in an array according to the pixel arrangement of the display panel 1.
Specifically, the light emitting device 15 is adhered to the pixel defining layer 14 between two adjacent grooves 143 in the groove group, the portion of the pixel defining layer 14 to which the light emitting device 15 is adhered is set to be the first portion 141, the portion to which the light emitting device 15 is not adhered is set to be the second portion 142, and in the uncured state of the material of the pixel defining layer 14, the light emitting device 15 can be initially fixed by using the adhesion before being bound, so as to prevent the light emitting device 15 from being offset and causing poor binding.
When the conductive material 17 is filled in the grooves 143, the microcavity structure 16 is favorable for the conductive material 17 to generate a liquid capillary phenomenon, so that the conductive material 17 is convenient to permeate into the grooves 143 and between the light emitting device 15 and the conductive electrode 131, and the first pins 151 and the second pins 152 of the light emitting device 15 are respectively connected with the conductive electrode 131 in a binding way through the conductive material 17, so that the binding connection stability of the light emitting device 15 and the conductive electrode 131 is improved, and the occurrence of poor binding situations of the light emitting device 15 is prevented.
In the embodiment of the disclosure, the conductive material 17 is a liquid nano conductive silver paste, which has low curing temperature, extremely high bonding strength and stable electrical performance, and can effectively improve the bonding connection stability of the light emitting device 15 and the conductive electrode 131. Of course, in some embodiments, the conductive material 17 may be other liquid conductive materials, which is not limited herein.
Further, as shown in fig. 2 and 4, the two sides of the light emitting device 15 in the orthographic projection area of the plane of the substrate 11 are located in the orthographic projection area of the plane of the substrate 11 by two adjacent grooves 143, so that the openings on the two sides of the grooves 143 are not blocked by the light emitting device 15, and the light emitting device 15 is not affected by the light emitting device 15 when the conductive material 17 is filled on the opening side of the grooves 143 by ink jet printing or other means after the light emitting device 15 is adhered to the first portion 141 of the pixel defining layer 14.
Further, referring to fig. 2, the height of the first portion 141 of the pixel defining layer 14 to which the light emitting device 15 is adhered is smaller than the height of the second portion 142 to which the light emitting device 15 is not adhered, so that the first and second pins 151 and 152 of the light emitting device 15 are located inside the opening of the groove 143, and the light emitting device 15 and the conductive electrode 131 can be bonded and connected only by filling the groove 143 with the conductive material 17, thereby preventing the conductive material 17 from overflowing to the outside of the groove 143, and ensuring the stability of the bonded connection without affecting the display effect of the display panel.
Further, referring to fig. 2 and 3, the opening of the groove 143 on the plane of the pixel defining layer 14 is rectangular, and the cross-section of the groove 143 along the direction perpendicular to the plane of the pixel defining layer 14 is inverted trapezoid. Of course, in some embodiments, the opening shape of the recess 143 on the plane of the pixel defining layer 14 may be a circular shape, an oval shape, or other polygonal structures, and the cross-sectional shape of the recess along the direction perpendicular to the plane of the pixel defining layer 14 may be a trapezoid, a rectangle, or other polygonal structures, which can achieve the same technical effects as the above-mentioned shapes, and the specific shape may be set according to the actual needs and the manufacturing process, which is not limited herein.
Fig. 5 to 7 are schematic diagrams illustrating a cross-sectional structure of another display panel provided in the embodiment of the present disclosure along a direction A-A in fig. 1, fig. 6 is a schematic diagram illustrating a plane of a pixel defining layer in the embodiment of the present disclosure, and fig. 7 is a schematic diagram illustrating a plane of a pixel defining layer after a light emitting device is bonded in the embodiment of the present disclosure.
Referring to fig. 5 to 7, the structure of the display panel provided in the embodiment of the present disclosure is substantially the same as that of the display panel described above, and the difference is that the recess 143 in the display panel provided in the embodiment of the present disclosure is in a shape of a loop in the plane of the pixel defining layer 14, and a support pillar 144 is disposed in each of the two loop-shaped recesses 143 opposite to the light emitting device 15, where the support pillar 144 is formed by etching the pixel defining layer 14 to form the recess 143, and a side of the light emitting device 15 near the substrate 11 is adhered to the support pillar 144, and the support pillar 144 has the same function as the first portion 141 for supporting and adhering and fixing the light emitting device 15. Of course, the number of the support columns 144 in the single groove 143 is not limited to 1 in the embodiment of the disclosure, and in some embodiments, two or more support columns 144 arranged at intervals may be provided according to actual needs for supporting the light emitting device, which is not limited herein.
Specifically, the heights of the support posts 144 are the same as the heights of the first portions 141 of the pixel defining layer 14 and are lower than the heights of the second portions 142, to which the light emitting devices 15 are not adhered, so that the light emitting devices 15 can be smoothly adhered to the pixel defining layer 14, and the light emitting devices are prevented from being offset.
Referring to fig. 5 and 7, the orthographic projection area of the light emitting device 15 on the plane of the substrate 11 covers the orthographic projection area of the support pillar 144 on the plane of the substrate 11, so as to ensure the effect of the support pillar 144 on the process and adhesion fixation of the light emitting device 15, and prevent the support pillar 144 on the outside of the light emitting device from affecting the subsequent spray printing of the conductive material 17.
The beneficial effects of the embodiment of the disclosure are that: according to the embodiment of the disclosure, the grooves which are arranged in an array and expose part of the conductive electrodes are formed on the pixel definition layer, the light-emitting device is adhered to the pixel definition layer between two adjacent grooves by using the viscosity of the material of the pixel definition layer in an uncured state, so that the light-emitting device is preliminarily fixed before being bound, and then the light-emitting device and the conductive electrodes are bound and connected by filling the conductive material into the microcavity structure formed between the light-emitting device and the two adjacent grooves, so that the occurrence of poor binding of the light-emitting device is prevented, and the repairing cost is reduced.
The embodiment of the disclosure further provides a display terminal, as shown in fig. 8, fig. 8 is a schematic structural diagram of the display terminal provided by the embodiment of the disclosure, the display terminal includes a display panel 1 and a terminal main body 2, the display panel 1 is disposed on the terminal main body 2, the terminal main body 2 and the display panel 1 may be combined into a whole, and the display panel 1 is the display panel provided by the foregoing embodiment. The display terminal 3 provided in the embodiment of the present disclosure can achieve the same technical effects as the display panel provided in the above embodiment, and will not be described herein.
The embodiment of the present disclosure further provides a method for manufacturing a display panel, which is described in detail below with reference to fig. 9 to 10H. Fig. 9 is a flow chart of a manufacturing method of a display panel according to an embodiment of the present disclosure, and fig. 10A to 10H are schematic structural diagrams of a display panel corresponding to the manufacturing method of the embodiment of the present disclosure, where the manufacturing method of the display panel includes:
step S1: a substrate 11 is provided, and a thin film transistor array layer 12 and a conductive electrode layer 13 are formed on the substrate 11, wherein the conductive electrode layer 13 includes a plurality of patterned conductive electrodes 131.
Specifically, the step S1 includes:
step S101: as shown in fig. 10A, a substrate base 11 is provided, a layer of metal oxide material is deposited on the substrate base 11, the metal oxide material is patterned, and an active layer 1221 is formed;
step S102: as shown in fig. 10B, an insulating material is deposited on the substrate 11, the insulating material is patterned to form a gate insulating layer 1222 on the active layer 1221, a metal material is deposited on the substrate 11, the metal material is patterned to form a gate line layer 1223 on the gate insulating layer 1222;
step S103: as shown in fig. 10C, an insulating material is deposited on the substrate 11, the insulating material is patterned to form an insulating layer 121 and a plurality of vias on the insulating layer 121, a metal material is deposited on the insulating layer 121, and the metal material is patterned to form a source electrode, a drain electrode and a plurality of signal traces;
step S104: as shown in fig. 10D, a passivation layer material is deposited on the insulating layer 121, the passivation layer material is patterned to form a passivation protection layer 123 and a plurality of vias on the passivation protection layer 123, a metal material is deposited on the passivation protection layer 123, the metal material is patterned to form a conductive electrode layer 13, and the conductive electrode layer 13 includes a plurality of patterned conductive electrodes 131.
Further, in the step S101, the metal oxide material is indium zinc oxide (indium zinc oxide, IZO). In other embodiments, the metal oxide material may also be indium gallium oxide (indium gallium oxide, IGO), indium gallium tin oxide (indium gallium tin oxide, IGTO), or indium gallium zinc tin oxide (indium gallium zinc tin oxide, IGZTO).
In the step S102, the insulating material of the gate insulating layer 1222 is SiOx, and the gate line layer 1223 is a stacked structure of metal Cu/Mo. In some embodiments, the insulating material of the gate insulating layer 1222 may also be an insulating material such as SiNx, alOx, etc., in other embodiments, the gate insulating layer 1222 may also be a stacked structure of SiNx/SiOx material, the gate line layer 1223 may also be a stacked structure of metal Cu/MoTi, a stacked structure of metal Cu/Ti, a stacked structure of metal Al/Mo, or a CuNb alloy.
In the step S103, the insulating layer 121 and the gate insulating layer 1222 are made of the same material and SiOx, and the source electrode, the drain electrode and the signal trace are all stacked structures of Cu/Mo. In some embodiments, the insulating layer 121 may be a stacked structure of SiOx/SiNx material, and the source and drain electrodes and the signal trace may be a stacked structure of metal Cu/MoTi, a stacked structure of metal Cu/Ti, a stacked structure of metal Al/Mo, or a CuNb alloy.
In the step S104, the passivation layer 123 is made of SiOx and the gate insulating layer 1222 is made of the same material, and the conductive electrode layer 13 is a stacked structure of Cu/Mo. In some embodiments, the passivation protection layer 123 may be a SiNx material or a stacked structure of SiOx/SiNx materials, and the conductive electrode layer 13 may be a stacked structure of metal Cu/MoTi, a stacked structure of metal Cu/Ti, a stacked structure of metal Al/Mo, or a CuNb alloy. The materials of the film layers in the above steps may be selected according to the requirements in actual production, and are not limited to the materials provided in the embodiments of the present disclosure, but are not limited thereto.
In an embodiment of the present disclosure, the method for manufacturing a display panel further includes:
step S2: as shown in fig. 10E, an organic photoresist is coated on the thin film transistor array layer 12, and the pixel defining layer 14 and the plurality of grooves 143 exposing portions of the conductive electrode 131 are etched;
step S3: as shown in fig. 10F, before the pixel defining layer 14 is not completely cured, transferring the plurality of light emitting devices 15 onto the pixel defining layer 14 between two adjacent grooves 143, wherein a microcavity structure 16 is formed between each of the light emitting devices 15 and two adjacent grooves 143;
step S4: as shown in fig. 10G, the grooves 143 are filled with a conductive material 17, and the conductive material 17 is pre-cured so that the light emitting device 15 is bonded to the conductive electrode 131 through the conductive material 17;
step S5: performing a lighting test on the light emitting device 15 transferred onto the pixel defining layer 14, repairing an abnormal point, and curing the pixel defining layer 14 and the conductive material 17 again after the repairing is completed; and
step S6: as shown in fig. 10H, an encapsulation layer 18 covering the light emitting device 15 is formed on the pixel defining layer 14.
Specifically, in step S3, the material of the pixel defining layer 14 is an organic photoresist, and has a certain adhesiveness before being not fully cured, and the light emitting device 15 transferred onto the substrate 11 is disposed on the pixel defining layer 14 between two adjacent grooves 143, so that the light emitting device 15 can be initially fixed before being bound, so as to prevent the light emitting device 15 from being offset and causing poor binding.
In step S3, the microcavity structure 16 formed between the light-emitting device 15 and the groove 143 is beneficial for the conductive material 17 filled into the groove 143 in step S4 to generate a liquid capillary phenomenon, so that the conductive material 17 is convenient to permeate into the groove 143 and between the light-emitting device 15 and the conductive electrode 131, and the first pin 151 and the second pin 152 of the light-emitting device 15 are respectively bonded and connected with the conductive electrode 131 through the conductive material 17, so that the bonding connection stability of the light-emitting device 15 and the conductive electrode 131 is improved, and the occurrence of bonding failure of the light-emitting device 15 is prevented.
In step S3, the light emitting device 15 is a Micro LED chip, that is, the display panel 1 is a Micro LED display panel. Of course, in some embodiments, the light emitting device 15 may be a light emitting device such as a Mini LED chip, which is not limited herein.
Specifically, the method of filling the conductive material 17 into the groove 143 in step S4 is an inkjet printing method, and the conductive material 17 can be precisely printed into the groove 143 by using the inkjet printing method, so as to prevent the conductive material from overflowing and binding failure. In addition, in step S4, the conductive material 17 is a liquid nano conductive silver paste, which has low curing temperature, extremely high bonding strength and stable electrical performance, and can effectively improve the bonding connection stability of the light emitting device 15 and the conductive electrode 131. Of course, in some embodiments, the conductive material 17 may be other liquid conductive materials, which is not limited herein.
In step S4, only the conductive material 17 is pre-cured before the lighting test in step S5 is performed, so that the light emitting device 15 is electrically connected with the conductive electrode 131 through the conductive material 17, and meanwhile, the bonding strength of the pre-cured conductive material 17 and the non-cured pixel defining layer 14 is lower than that of the completely cured pixel defining layer, so that the light emitting device 15 in the abnormal point is conveniently removed and repaired in step S5, and the repair difficulty and repair cost of the light emitting device are reduced.
Specifically, the method of pre-curing and secondary curing in steps S4 and S5 is ultraviolet irradiation, and curing may be performed by heating as well, which is not limited herein.
In step S5, after the lighting test and the repair of the abnormal point are completed, the pixel defining layer 14 and the conductive material 17 are cured again until the abnormal point is not formed, so that the pixel defining layer 14 and the conductive material 17 are completely cured, the binding connection between the light emitting device 15 and the conductive electrode 131 is completed, and the binding strength between the light emitting device 15 and the conductive electrode is increased, so as to prevent the occurrence of the binding failure.
In step S6, the encapsulation layer 18 is mainly used for protecting the light emitting device 15 and components in the display panel 1, so as to prevent the damage caused by the intrusion of moisture, oxygen, etc. into the display panel, and also prevent the components in the display panel 1 from being mechanically damaged by the outside, and enhance the stability thereof. In addition, the encapsulation layer 18 has the same structure as the encapsulation layer of the display panel in the prior art, and will not be described herein.
The beneficial effects of the embodiment of the disclosure are that: according to the manufacturing method of the display panel, the organic photoresist material is etched to form the pixel definition layer and the grooves which expose part of the pixel electrodes and are distributed at intervals, so that the light emitting device is bonded with the pixel definition layer between two adjacent grooves to be primarily fixed, a microcavity structure is formed between the light emitting device and two adjacent grooves to be beneficial to permeation of the conductive material into the grooves and between the light emitting device and the conductive electrodes, and before lighting test, the conductive material is only pre-cured, so that the light emitting device in an abnormal point is conveniently pulled out and repaired, the repair difficulty and repair cost of the light emitting device are reduced, and binding failure of the light emitting device is prevented.
In summary, although the present disclosure has been described with reference to the preferred embodiments, the preferred embodiments are not intended to limit the disclosure, and those skilled in the art may make various modifications and alterations without departing from the spirit and scope of the disclosure, so the scope of the disclosure is defined by the appended claims.

Claims (10)

1. A display panel, comprising:
a substrate base;
the thin film transistor array layer is arranged on the substrate base plate and comprises a plurality of thin film transistors and a plurality of signal wires which are arranged in an array manner;
the conductive electrode layer is arranged on one side, far away from the substrate, of the thin film transistor array layer and comprises a plurality of patterned conductive electrodes, and the conductive electrodes are respectively connected with the thin film transistor and the signal wiring;
the pixel definition layer is arranged on one side, far away from the substrate, of the thin film transistor array layer and covers the conductive electrode layer, a plurality of grooves which are arranged in an array mode are formed in the pixel definition layer, and part of the conductive electrodes are exposed out of the grooves; and
the light-emitting devices are respectively adhered to the pixel definition layers between two adjacent grooves, a microcavity structure is formed between each light-emitting device and two adjacent grooves, and the light-emitting devices are connected with the conductive electrodes in a binding mode through conductive materials filled in the microcavity structure;
the preparation method for binding and connecting the light-emitting device and the conductive electrode comprises the following steps: before the pixel definition layer is not completely cured, transferring a plurality of light emitting devices to the pixel definition layer between two adjacent grooves, wherein a microcavity structure is formed between each light emitting device and each two adjacent grooves; filling the conductive material in the groove, and pre-curing the conductive material to electrically connect the light emitting device with the conductive electrode through the conductive material; and carrying out lighting test on the light emitting device transferred to the pixel definition layer, repairing abnormal points, and curing the pixel definition layer and the conductive material again after repairing.
2. The display panel of claim 1, wherein the light emitting devices are located in the orthographic projection area of the plane of the substrate on both sides of the orthographic projection area of the plane of the substrate.
3. The display panel according to claim 1, wherein a height of a portion of the pixel defining layer to which the light emitting device is attached is smaller than a height of a portion to which the light emitting device is not attached.
4. The display panel of claim 1, wherein the opening shape of the recess in the plane of the pixel defining layer comprises a rectangular shape, a circular shape, or a circular shape.
5. The display panel of claim 4, wherein the recess has a shape of a loop in an opening of a plane of the pixel defining layer, and a support post is provided in the recess, and the light emitting device is adhered to the support post at a side close to the substrate.
6. The display panel of claim 5, wherein the support posts have the same height as the pixel defining layer to which the light emitting devices are attached, and the orthographic projection area of the light emitting devices on the plane of the substrate covers the orthographic projection area of the support posts on the plane of the substrate.
7. The display panel of claim 1, wherein the light emitting device is a mini LED chip or a micro LED chip.
8. A display terminal comprising a terminal body and the display panel according to any one of claims 1 to 7, the display panel being provided on the terminal body.
9. A method for manufacturing a display panel, comprising:
providing a substrate, forming a thin film transistor array layer and a conductive electrode layer which are stacked on the substrate, wherein the conductive electrode layer comprises a plurality of patterned conductive electrodes;
coating an organic photoresist material on the thin film transistor array layer, and etching the organic photoresist material to form a pixel definition layer and a plurality of grooves which are arranged at intervals and expose part of the conductive electrode;
before the pixel definition layer is not completely cured, transferring a plurality of light emitting devices to the pixel definition layer between two adjacent grooves, wherein a microcavity structure is formed between each light emitting device and each adjacent groove;
filling conductive materials in the grooves, and pre-curing the conductive materials to electrically connect the light-emitting device with the conductive electrodes through the conductive materials;
performing lighting test on the light emitting device transferred to the pixel definition layer, repairing abnormal points, and curing the pixel definition layer and the conductive material again after repairing; and
and forming an encapsulation layer covering the light emitting device on the pixel definition layer.
10. The method of manufacturing a display panel of claim 9, wherein the conductive material comprises nano conductive silver paste.
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