CN111584458A - Adjustable three-dimensional inductor with compact structure - Google Patents
Adjustable three-dimensional inductor with compact structure Download PDFInfo
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- CN111584458A CN111584458A CN202010255621.XA CN202010255621A CN111584458A CN 111584458 A CN111584458 A CN 111584458A CN 202010255621 A CN202010255621 A CN 202010255621A CN 111584458 A CN111584458 A CN 111584458A
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- inductor
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 111
- 239000002184 metal Substances 0.000 claims abstract description 111
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000004804 winding Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F21/00—Variable inductances or transformers of the signal type
- H01F21/02—Variable inductances or transformers of the signal type continuously variable, e.g. variometers
Abstract
The invention discloses an adjustable three-dimensional inductor with a compact structure, which comprises a silicon substrate layer, wherein a top dielectric layer is arranged on the upper surface of the silicon substrate layer, a bottom dielectric layer is arranged on the lower surface of the silicon substrate layer, two annular magnetic cores are concentrically arranged in the top dielectric layer and the bottom dielectric layer, a first spiral inductor is wound outside a magnetic core outside the top dielectric layer and a magnetic core outside the bottom dielectric layer, a second spiral inductor separated from the first spiral inductor is wound outside a magnetic core inside the top dielectric layer and a magnetic core inside the bottom dielectric layer, and one end inside the first spiral inductor and one end outside the second spiral inductor are connected through a metal strip in the top dielectric layer or the bottom dielectric layer. The adjustable three-dimensional inductor with the compact structure solves the problem that the existing inductor occupies a large area.
Description
Technical Field
The invention belongs to the technical field of microelectronic devices, and particularly relates to an adjustable three-dimensional inductor with a compact structure.
Background
The inductor is an important passive device, and mainly plays roles of filtering, oscillating, delaying, trapping, screening signals, filtering noise, stabilizing current, suppressing electromagnetic wave interference and the like in a circuit. Traditional chip inductor adopts many circles plane helical structure, and the loss is high, and area occupied is big, can't satisfy the requirement of the integrated circuit that the chip size that constantly reduces and the integration degree constantly improves gradually. The proposed three-dimensional inductor based on through silicon vias effectively solves this problem. In most of the existing three-dimensional inductors, a silicon through array adopts a rectangular arrangement mode. When the inductance value is increased by increasing the number of turns of the winding, the occupied chip area is also increased more and more by adopting the three-dimensional inductor in the rectangular arrangement mode, and the integral integration degree of the chip is influenced.
Disclosure of Invention
The invention aims to provide an adjustable three-dimensional inductor with a compact structure, and solves the problem that the existing inductor occupies a large area.
The technical scheme adopted by the invention is as follows: the utility model provides a compact structure's adjustable three-dimensional inductor, including the silicon substrate layer, the upper surface of silicon substrate layer is provided with the top dielectric layer, the lower surface of silicon substrate layer is provided with the bottom dielectric layer, all be provided with two annular magnetic cores in top dielectric layer and the bottom dielectric layer with one heart, top dielectric layer leans on outer magnetic core and bottom dielectric layer to lean on outer magnetic core to wind jointly has first spiral inductor, top dielectric layer leans on inner magnetic core and bottom dielectric layer to lean on outer magnetic core to wind jointly and has closed the second spiral inductor with first spiral inductor alternate segregation, first spiral inductor leans on interior one end and second spiral inductor to lean on outer one end to be connected through the metal strip that is located top dielectric layer or bottom dielectric layer.
The present invention is also characterized in that,
the outer one of the two magnetic cores in the top dielectric layer is a first top magnetic core, the inner one of the two magnetic cores in the top dielectric layer is a second top magnetic core, the outer one of the two magnetic cores in the bottom dielectric layer is a first bottom magnetic core, the inner one of the two magnetic cores in the bottom dielectric layer is a second bottom magnetic core, the first top magnetic core and the first bottom magnetic core vertically correspond to each other, and the second top magnetic core and the second bottom magnetic core vertically correspond to each other.
A plurality of first through silicon holes which are communicated up and down are formed in both common sides of the first top magnetic core and the first bottom magnetic core, and the plurality of first through silicon holes are uniformly distributed at intervals along the circumferential direction of the first top magnetic core or the first bottom magnetic core; a plurality of second through silicon holes which are communicated up and down are formed in the two common sides of the second top magnetic core and the second bottom magnetic core, and the plurality of second through silicon holes are distributed along the circumferential uniform interval of the second top magnetic core or the second bottom magnetic core.
All pack in a plurality of first silicon through-holes and have first metal post, all pack in a plurality of second silicon through-holes and have second metal post, all be provided with the insulating layer between first metal post and the silicon substrate layer, between second metal post and the silicon substrate layer.
The insulating layer, the top dielectric layer and the bottom dielectric layer are made of one of silicon dioxide, silicon nitride or silicon oxynitride.
The first spiral inductor comprises a plurality of first top metal interconnection lines and first bottom metal interconnection lines which are distributed in a staggered mode, the first top metal interconnection lines are located above a first top magnetic core in a top dielectric layer, two ends of each first top metal interconnection line are located on two sides of the first top magnetic core respectively, the first bottom metal interconnection lines are located below a first bottom magnetic core in a bottom dielectric layer, two ends of each first bottom metal interconnection line are located on two sides of the first bottom magnetic core respectively, and the head and the tail of each two adjacent first top metal interconnection lines and the head and the tail of each first bottom metal interconnection line are connected through first metal columns in sequence; the second spiral inductor comprises a plurality of second top metal interconnection lines and second bottom metal interconnection lines which are distributed in a staggered mode, the second top metal interconnection lines are located above a second top magnetic core in the top dielectric layer, two ends of each second top metal interconnection line are located on two sides of the second top magnetic core respectively, the second bottom metal interconnection lines are located below a second bottom magnetic core in the bottom dielectric layer, two ends of each second bottom metal interconnection line are located on two sides of the second bottom magnetic core respectively, and the head and the tail of each two adjacent second top metal interconnection lines and the head and the tail of each second bottom metal interconnection line are connected through a second metal column in a sequential mode.
The first top metal interconnection line, the first bottom metal interconnection line, the second top metal interconnection line, the second bottom metal interconnection line, the first metal column and the second metal column are all made of one of copper or aluminum.
The end of the first spiral inductor far away from the metal strip is provided with an inductor input end, and the end of the second spiral inductor far away from the metal strip is provided with an inductor output end.
The invention has the beneficial effects that: according to the adjustable three-dimensional inductor with the compact structure, the annular arrangement mode which is more compact than the rectangular arrangement mode is adopted, the arrangement density of the through silicon holes is increased, the number of turns of windings which can be manufactured in the same area is obviously increased, the occupied size of a chip of the inductor is reduced to a certain extent, and the inductance value of each unit area is increased; the adoption of the multiple circles of silicon through holes and the four annular closed magnetic cores which are closely arranged in an annular mode reduces the leakage of a magnetic field to the outside of the inductor, and can more effectively increase the inductance value; through adding electric current at the input, can change magnetic core magnetic permeability, and then change inductance value, realize the control of input current to inductance value, that is to say inductance value adjustable.
Drawings
FIG. 1 is a top view of a compact, tunable three-dimensional inductor of the present invention with the silicon substrate layer and the dielectric layer removed;
fig. 2 is a radial cross-sectional view of a compact adjustable three-dimensional inductor of the present invention along or at a first spiral inductor.
In the figure, 1, a silicon substrate layer, 2, a top dielectric layer, 3, a bottom dielectric layer, 4, a metal strip, 5, a first top magnetic core, 6, a second top magnetic core, 7, a first bottom magnetic core, 8, a second bottom magnetic core, 9, a first through silicon via, 10, a second through silicon via, 11, a first metal pillar, 12, a second metal pillar, 13, an insulating layer, 14, a first top metal interconnection line, 15, a first bottom metal interconnection line, 16, a second top metal interconnection line, 17, a second bottom metal interconnection line, 18, an inductor input end, 19, and an inductor output end.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention provides an adjustable three-dimensional inductor with a compact structure, as shown in figures 1 and 2, the adjustable three-dimensional inductor comprises a silicon substrate layer 1, a top dielectric layer 2 is arranged on the upper surface of the silicon substrate layer 1, a bottom dielectric layer 3 is arranged on the lower surface of the silicon substrate layer 1, two annular magnetic cores are concentrically arranged in the top dielectric layer 2 and the bottom dielectric layer 3, a first spiral inductor is wound outside the magnetic core outside the top dielectric layer 2 and the magnetic core outside the bottom dielectric layer 3, a second spiral inductor separated from the first spiral inductor is wound outside the magnetic core inside the top dielectric layer 2 and the magnetic core inside the bottom dielectric layer 3, one end inside the first spiral inductor and one end outside the second spiral inductor are connected through a metal strip 4 positioned in the top dielectric layer 2 or the bottom dielectric layer 3, an inductor input end 18 is arranged at one end of the first spiral inductor far away from the metal strip 4, the end of the second spiral inductor remote from the metal strip 4 is provided with an inductor output 19.
Wherein, the outer one of two magnetic cores in top dielectric layer 2 is first top magnetic core 5, the inner one of two magnetic cores in top dielectric layer 2 is second top magnetic core 6, the outer one of two magnetic cores in bottom dielectric layer 3 is first bottom magnetic core 7, the inner one of two magnetic cores in bottom dielectric layer 3 is second bottom magnetic core 8, first top magnetic core 5 corresponds to first bottom magnetic core 7 from top to bottom, and second top magnetic core 6 corresponds to second bottom magnetic core 8 from top to bottom. A plurality of first through silicon holes 9 which are communicated up and down are formed in both common sides of the first top magnetic core 5 and the first bottom magnetic core 7, and the plurality of first through silicon holes 9 are uniformly distributed at intervals along the circumferential direction of the first top magnetic core 5 or the first bottom magnetic core 7; a plurality of second through silicon holes 10 which are communicated up and down are formed in two common sides of the second top magnetic core 6 and the second bottom magnetic core 8, and the plurality of second through silicon holes 10 are distributed along the circumferential uniform interval of the second top magnetic core 6 or the second bottom magnetic core 8. All there is first metal post 11 in a plurality of first through-silicon-vias 9, all has second metal post 12 in a plurality of second through-silicon-vias 10, all is provided with insulating layer 13 between first metal post 11 and the silicon substrate layer 1, between second metal post 12 and the silicon substrate layer 1. The insulating layer 13, the top dielectric layer 2 and the bottom dielectric layer 3 are made of one of insulating materials such as silicon dioxide, silicon nitride or silicon oxynitride.
The first spiral inductor comprises a plurality of first top metal interconnection lines 14 and first bottom metal interconnection lines 15 which are distributed in a staggered mode, the first top metal interconnection lines 14 are located above the first top magnetic cores 5 in the top dielectric layer 2, two ends of each first top metal interconnection line 14 are located on two sides of the first top magnetic cores 5 respectively, the first bottom metal interconnection lines 15 are located below the first bottom magnetic cores 7 in the bottom dielectric layer 3, two ends of each first bottom metal interconnection line are located on two sides of the first bottom magnetic cores 7 respectively, and the heads and the tails of every two adjacent first top metal interconnection lines 14 and the heads and the tails of every two first bottom metal interconnection lines 15 are connected through first metal columns 11 in sequence; the second spiral inductor comprises a plurality of second top metal interconnection lines 16 and second bottom metal interconnection lines 17 which are distributed in a staggered mode, the second top metal interconnection lines 16 are located above the second top magnetic cores 6 in the top dielectric layer 2, two ends of each second top metal interconnection line 16 are located on two sides of each second top magnetic core 6, the second bottom metal interconnection lines 17 are located below the second bottom magnetic cores 8 in the bottom dielectric layer 3, two ends of each second bottom metal interconnection line 16 are located on two sides of each second bottom magnetic core 8, and the heads and the tails of every two adjacent second top metal interconnection lines 16 and the heads and the tails of every two adjacent second bottom metal interconnection lines 17 are connected through the second metal columns 12 in sequence. The first top metal interconnection line 14, the first bottom metal interconnection line 15, the second top metal interconnection line 16, the second bottom metal interconnection line 17, the first metal pillar 11 and the second metal pillar 12 are all made of one of conductive materials such as copper or aluminum.
In operation, as shown in fig. 1, a first spiral inductor formed by connecting the first bottom metal interconnection line 15, the first metal pillar 11, the first top metal interconnection line 14, the first metal pillar 11 and the first bottom metal interconnection line 15 … end to end is wound around the peripheries of the first top magnetic core 5 and the first bottom magnetic core 7 to form a ring-shaped inductor, and a second spiral inductor formed by connecting the second bottom metal interconnection line 17, the second metal pillar 12, the second top metal interconnection line 16, the second metal pillar 12 and the second bottom metal interconnection line 17 … end to end is wound around the peripheries of the second top magnetic core 6 and the second bottom magnetic core 8 to form a ring-shaped inductor, so that the arrangement is more compact; by applying a current to the inductor input 18, the magnetic permeability of the core, and thus the inductance, can be changed, allowing control of the inductance by the input current, i.e. the inductance can be adjusted.
Through the mode, the adjustable three-dimensional inductor with the compact structure increases the arrangement density of the through silicon vias by adopting a ring arrangement mode which is more compact than a rectangular arrangement, and the number of turns of windings which can be manufactured in the same area is obviously increased, so that the occupied size of a chip of the inductor is reduced to a certain extent, and the inductance value of each unit area is increased; the adoption of the multiple circles of silicon through holes and the four annular closed magnetic cores which are closely arranged in an annular mode reduces the leakage of a magnetic field to the outside of the inductor, and can effectively increase the inductance value.
Claims (8)
1. An adjustable three-dimensional inductor with a compact structure is characterized by comprising a silicon substrate layer (1), wherein a top dielectric layer (2) is arranged on the upper surface of the silicon substrate layer (1), a bottom dielectric layer (3) is arranged on the lower surface of the silicon substrate layer (1), two annular magnetic cores are concentrically arranged in the top dielectric layer (2) and the bottom dielectric layer (3), a first spiral inductor is wound outside a magnetic core close to the outer part of the top dielectric layer (2) and a magnetic core close to the outer part of the bottom dielectric layer (3), a second spiral inductor which is mutually separated from the first spiral inductor is wound outside a magnetic core close to the inner part of the top dielectric layer (2) and a magnetic core close to the inner part of the bottom dielectric layer (3), the inner end of the first spiral inductor and the outer end of the second spiral inductor are connected through a metal strip (4) positioned in the top dielectric layer (2) or the bottom dielectric layer (3).
2. The adjustable three-dimensional inductor with compact structure as claimed in claim 1, wherein the outer one of the two magnetic cores in the top dielectric layer (2) is the first top magnetic core (5), the inner one of the two magnetic cores in the top dielectric layer (2) is the second top magnetic core (6), the outer one of the two magnetic cores in the bottom dielectric layer (3) is the first bottom magnetic core (7), the inner one of the two magnetic cores in the bottom dielectric layer (3) is the second bottom magnetic core (8), the first top magnetic core (5) and the first bottom magnetic core (7) correspond to each other up and down, and the second top magnetic core (6) and the second bottom magnetic core (8) correspond to each other up and down.
3. The adjustable three-dimensional inductor with a compact structure as claimed in claim 2, wherein a plurality of first through silicon vias (9) are formed on both common sides of the first top magnetic core (5) and the first bottom magnetic core (7), and the plurality of first through silicon vias (9) are uniformly distributed at intervals along the circumferential direction of the first top magnetic core (5) or the first bottom magnetic core (7); a plurality of second through silicon holes (10) which are communicated up and down are formed in two common sides of the second top magnetic core (6) and the second bottom magnetic core (8), and the plurality of second through silicon holes (10) are distributed along the circumferential direction of the second top magnetic core (6) or the second bottom magnetic core (8) at intervals.
4. A tunable three-dimensional inductor with compact structure as claimed in claim 3, wherein the first through-silicon-vias (9) are filled with first metal pillars (11), the second through-silicon-vias (10) are filled with second metal pillars (12), and insulating layers (13) are disposed between the first metal pillars (11) and the silicon substrate layer (1) and between the second metal pillars (12) and the silicon substrate layer (1).
5. The tunable three-dimensional inductor with compact structure as claimed in claim 4, wherein the insulating layer (13), the top dielectric layer (2) and the bottom dielectric layer (3) are made of one of silicon dioxide, silicon nitride or silicon oxynitride.
6. The tunable three-dimensional inductor with a compact structure as claimed in claim 4, wherein the first spiral inductor comprises a plurality of first top metal interconnection lines (14) and first bottom metal interconnection lines (15) distributed in a staggered manner, the first top metal interconnection lines (14) are both located above the first top magnetic cores (5) in the top dielectric layer (2) and both ends of each first top metal interconnection line (14) are respectively located at both sides of the first top magnetic cores (5), the first bottom metal interconnection lines (15) are both located below the first bottom magnetic cores (7) in the bottom dielectric layer (3) and both ends of each first top metal interconnection line are respectively located at both sides of the first bottom magnetic cores (7), and two adjacent first top metal interconnection lines (14) and two adjacent first bottom metal interconnection lines (15) are sequentially connected end to end through the first metal columns (11); the second spiral inductor comprises a plurality of second top metal interconnection lines (16) and second bottom metal interconnection lines (17) which are distributed in a staggered mode, the second top metal interconnection lines (16) are located above the second top magnetic cores (6) in the top dielectric layer (2), two ends of each second top metal interconnection line (16) are located on two sides of the second top magnetic cores (6) respectively, the second bottom metal interconnection lines (17) are located below the second bottom magnetic cores (8) in the bottom dielectric layer (3) respectively, two ends of each second top metal interconnection line are located on two sides of each second bottom magnetic core (8), and the head and the tail of each two adjacent second top metal interconnection lines (16) and the head and the tail of each second bottom metal interconnection line (17) are connected through the second metal columns (12) in sequence.
7. A compactly structured tunable three-dimensional inductor according to claim 6, wherein the first top metal interconnection line (14), the first bottom metal interconnection line (15), the second top metal interconnection line (16), the second bottom metal interconnection line (17), the first metal pillar (11), and the second metal pillar (12) are made of one of copper and aluminum.
8. A TSV-based nested core inductor according to claim 1, characterized in that the end of the first spiral inductor remote from the metal strip (4) is provided with an inductor input (18) and the end of the second spiral inductor remote from the metal strip (4) is provided with an inductor output (19).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010255621.XA CN111584458B (en) | 2020-04-02 | 2020-04-02 | Compact structure's adjustable three-dimensional inductor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010255621.XA CN111584458B (en) | 2020-04-02 | 2020-04-02 | Compact structure's adjustable three-dimensional inductor |
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| CN111584458B CN111584458B (en) | 2024-02-23 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023207259A1 (en) * | 2022-04-29 | 2023-11-02 | 华为技术有限公司 | Inductor structure, wafer, die, chip and electronic device |
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| CN1871671A (en) * | 2003-09-05 | 2006-11-29 | 哈里公司 | Embedded toroidal inductors |
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