CN205016322U - Inductor structure - Google Patents
Inductor structure Download PDFInfo
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- CN205016322U CN205016322U CN201520802559.6U CN201520802559U CN205016322U CN 205016322 U CN205016322 U CN 205016322U CN 201520802559 U CN201520802559 U CN 201520802559U CN 205016322 U CN205016322 U CN 205016322U
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Abstract
The utility model provides an inductor structure, inductor structure includes at least: a plurality of the first metal layers and a plurality of second metal level, the both ends of each the first metal layer are formed with first through -hole, the second metal level is connected the different ends of adjacent the first metal layer through first through -hole in order, forms inductor structure. Inductor structure can also be including forming third metal layer between the first metal layer and the second metal level. The utility model discloses a form the three -dimensional stack structure of metal, saved chip area, obtained higher inductance value. In addition, preparation inductor structure's technology and CMOS compatible are applicable to the industrial production.
Description
Technical field
The utility model belongs to technical field of semiconductors, relates to a kind of inductor structure, particularly relates to inductor structure that is a kind of and CMOS technology compatibility.
Background technology
Along with the fast development of wireless mobile telecommunication technology, radio frequency integrated circuit becomes more and more important, and radio frequency integrated circuit is a kind of integrated circuit be operated in 300MHz ~ 300GHz frequency range.In radio frequency integrated circuit, inductor plays very important effect, become a kind of electronic devices and components of key and be widely used in various radio frequency integrated circuit, such as voltage controlled oscillator, low noise amplifier and frequency mixer etc. all need to use inductor, to meet low-loss, high integrated requirement.
In existing RFCOMS technique, generally form film inductor by the metal level of thick layer or two metal layers, described inductor has organizes loop construction more.In order to obtain larger inductance value, need to make more toroidal coil structure, this, by taking very many chip areas, is unfavorable for the integrated of chip.
Therefore, a kind of novel inductor structure is provided to be necessary.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of inductor structure, takies the problem of too much chip area for solving inductor in prior art.
For achieving the above object and other relevant objects, the utility model provides a kind of inductor structure, and described inductor structure at least comprises: multiple the first metal layer and multiple second metal level; The two ends of each the first metal layer are formed with the first through hole; Described second metal level is connected in turn by the difference end of the first through hole by adjacent the first metal layer, forms inductor structure.
As the scheme of a kind of optimization of this real Novel inductor structure, described inductor structure also comprises the 3rd metal level be formed between described the first metal layer and the second metal level, and described 3rd metal level comprises metal wire and is formed in the bonding jumper on described first through hole.
As the scheme of a kind of optimization of this real Novel inductor structure, described bonding jumper is formed the second through hole, described second metal level is connected in turn by the first through hole, bonding jumper and the second through hole difference end by adjacent the first metal layer, forms inductor structure.
As the scheme of a kind of optimization of this real Novel inductor structure, described inductor structure rounded, linear, oval, semicircle or square.
As the scheme of a kind of optimization of this real Novel inductor structure, in described first through hole and the second through hole, be filled with conducting metal.
As the scheme of a kind of optimization of this real Novel inductor structure, described the first metal layer, be dielectric layer between the second metal level and the 3rd metal level, described first through hole and the second through hole are arranged in dielectric layer.
As mentioned above, inductor structure of the present utility model, comprising: described inductor structure at least comprises: multiple the first metal layer and multiple second metal level; The two ends of each the first metal layer are formed with the first through hole; Described second metal level is connected in turn by the difference end of the first through hole by adjacent the first metal layer, forms inductor structure.Described inductor structure can also comprise the 3rd metal level be formed between described the first metal layer and the second metal level.The utility model, by forming metal three-dimensional structure, saves chip area, obtains higher inductance value.In addition, the technique and the CMOS technology that make inductor structure are compatible, are applicable to suitability for industrialized production.
Accompanying drawing explanation
Fig. 1 is shown as the first metal layer schematic diagram of the utility model inductor structure.
Fig. 2 is shown as the schematic diagram forming the first through hole in the utility model embodiment one at the first metal layer two ends.
Fig. 3 is shown as inductor structure schematic diagram in the utility model embodiment one.
Fig. 4 is shown as the schematic diagram forming the 3rd metal level in the utility model embodiment two.
Fig. 5 is shown as the schematic diagram forming the second through hole in the utility model embodiment two on the bonding jumper of the 3rd metal level.
Fig. 6 is shown as inductor structure schematic diagram in the utility model embodiment two.
It is linear schematic diagram that Fig. 7 is shown as the utility model inductor structure.
Element numbers explanation
1 the first metal layer
2 second metal levels
3 the 3rd metal levels
31 metal wires
32 bonding jumpers
4 first through holes
5 second through holes
Embodiment
By particular specific embodiment, execution mode of the present utility model is described below, person skilled in the art scholar the content disclosed by this specification can understand other advantages of the present utility model and effect easily.
Refer to Fig. 1 to Fig. 7.Notice, structure, ratio, size etc. that this specification institute accompanying drawings illustrates, content all only in order to coordinate specification to disclose, understand for person skilled in the art scholar and read, and be not used to limit the enforceable qualifications of the utility model, therefore the not technical essential meaning of tool, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under effect that the utility model can produce and the object that can reach, still all should drop on technology contents that the utility model discloses and obtain in the scope that can contain.Simultaneously, quote in this specification as " on ", D score, "left", "right", " centre " and " one " etc. term, also only for ease of understanding of describing, and be not used to limit the enforceable scope of the utility model, the change of its relativeness or adjustment, under changing technology contents without essence, when being also considered as the enforceable category of the utility model.
Embodiment one
As shown in Figures 1 to 3, the utility model provides a kind of inductor structure, and described inductor structure at least comprises multiple the first metal layer 1 and multiple second metal level 2.
Be illustrated in figure 1 described the first metal layer 1, in the present embodiment, described the first metal layer 1 forms circular configuration.Described the first metal layer 1 can be preferably aluminum, also can be other suitable metal materials, not limit at this.
As shown in Figure 2, the first through hole 4 is formed with at the two ends of each the first metal layer 1.Conducting metal is filled with in described first through hole 4.Preferably, in described first through hole 4, tungsten is filled.
As shown in Figure 3, described second metal level 2 is connected in turn by the difference end of the first through hole 4 by adjacent the first metal layer 1, thus forms inductor structure.The inductor entirety formed is rounded.
It should be noted that, described the first metal layer 1 and the second metal level 2 form two-layer three-dimensional stacking structure, and the first metal layer 1, first through hole 4 and the second metal level 2 form the coaxial coil in inductor device, can respond to the electric current of change.Exit can be set at the first metal layer 1 or the second metal level 2.In the present embodiment, exit is arranged on the second metal level 2, as shown in Figure 3.
Described second metal level 2 can be preferably aluminum, also can be other suitable metal materials, not limit at this.The material of described second metal level 2 and the first metal layer 1 can be the same or different.
Be dielectric layer (diagram) between described the first metal layer 1, second metal level 2, described first through hole 4 is arranged in dielectric layer.
By two metal layers 1,2 and one deck through hole 4, the inductor structure of formation, can saving chip area, and obtains higher inductance value.In addition, the technique of the inductor of making the present embodiment is complete and CMOS technology is compatible, is applicable to suitability for industrialized production.
Embodiment two
As shown in figures 4-6, the utility model provides a kind of inductor structure, and described inductor structure at least comprises multiple the first metal layer 1, multiple second metal level 2 and the 3rd metal level 3.
The shape of described the first metal layer 1 is identical with embodiment one, is circle.Described the first metal layer 1 can be preferably aluminum, also can be other suitable metal materials, not limit at this.
Described 3rd metal level 3 is formed between described the first metal layer 1 and the second metal level 2.As shown in Figure 4, described 3rd metal level 3 comprises metal wire 31 and the bonding jumper 32 be formed on described first through hole 4.Described metal wire 31 is equivalent to the magnetic core in inductor, and the shape of described metal wire 31 is consistent with the shape of the first metal layer 1.In the present embodiment, described the first metal layer 1 is circular, then described metal wire 31 is also circular, and described metal wire 31 can be blockade line, also can be non-close line.In the present embodiment, described metal wire 31 is non-close line.
Described 3rd metal level 3 can be preferably aluminum, also can be other suitable metal materials, not limit at this.Described 3rd metal level 3 can be the same or different with the material of described second metal level 2, the first metal layer 1.
As shown in Figure 5, described bonding jumper 32 is formed with the second through hole 5.Conducting metal is filled with in described second through hole 5.Preferably, in described second through hole 5, tungsten is filled.
As shown in Figure 6, the difference end of adjacent the first metal layer 1 is connected by the first through hole 4, bonding jumper 32 and the second through hole 5 by described second metal level 2 in turn, forms inductor structure.The inductor entirety formed is rounded.
It should be noted that, described the first metal layer 1, second metal level 2 and the 3rd metal level 3 form the three-dimensional stacking structure of three layers, metal wire 31 is equivalent to the magnetic core of inductance component, and the first metal layer 1, first through hole 4, bonding jumper 32 second through hole 5 and the second metal level 2 form the coaxial coil in inductor device.
Described second metal level 2 is identical with embodiment one, can be preferably aluminum, also can be other suitable metal materials, not limit at this.
Be dielectric layer between described the first metal layer 1, second metal level 2 and the 3rd metal level 3, described first through hole 4, second through hole 5 is arranged in dielectric layer.
By three-layer metal layer 1,2,3 and two-layer through hole 4,5, the inductor structure of formation, can saving chip area, and obtains higher inductance value.In addition, the technique of the inductor of making the present embodiment is complete and CMOS technology is compatible, is applicable to suitability for industrialized production.
It should be noted that, inductor structure of the present utility model is not limited to the circular configuration of embodiment one and embodiment two, and can also be linear, oval, semicircle or square etc., this is not restricted.
Being illustrated in figure 7 inductor is linear structural representation.Can find out, parallel to each other between the first metal layer 1, the metal wire 31 of the 3rd metal level 3 is a straight line, and described second metal level 2 is connected in turn by the difference end of through hole 4,5 by adjacent the first metal layer 1, forms inductor structure.
In sum, the utility model provides a kind of inductor structure, and described inductor structure at least comprises: multiple the first metal layer and multiple second metal level; The two ends of each the first metal layer are formed with the first through hole; Described second metal level is connected in turn by the difference end of the first through hole by adjacent the first metal layer, forms inductor structure.Described inductor structure can also comprise the 3rd metal level be formed between described the first metal layer and the second metal level.The utility model, by forming metal three-dimensional structure, saves chip area, obtains higher inductance value.In addition, the technique and the CMOS technology that make inductor structure are compatible, are applicable to suitability for industrialized production.
So the utility model effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all without prejudice under spirit of the present utility model and category, can modify above-described embodiment or changes.Therefore, such as have in art and usually know that the knowledgeable modifies or changes not departing from all equivalences completed under the spirit and technological thought that the utility model discloses, must be contained by claim of the present utility model.
Claims (6)
1. an inductor structure, is characterized in that, described inductor structure at least comprises: multiple the first metal layer and multiple second metal level; The two ends of each the first metal layer are formed with the first through hole; Described second metal level is connected in turn by the difference end of the first through hole by adjacent the first metal layer, forms inductor structure.
2. inductor structure according to claim 1, it is characterized in that: described inductor structure also comprises the 3rd metal level be formed between described the first metal layer and the second metal level, described 3rd metal level comprises metal wire and is formed in the bonding jumper on described first through hole.
3. inductor structure according to claim 2, it is characterized in that: on described bonding jumper, be formed with the second through hole, described second metal level is connected in turn by the first through hole, bonding jumper and the second through hole difference end by adjacent the first metal layer, forms inductor structure.
4. inductor structure according to claim 1, is characterized in that: described inductor structure rounded, linear, oval, semicircle or square.
5. inductor structure according to claim 3, is characterized in that: be filled with conducting metal in described first through hole and the second through hole.
6. inductor structure according to claim 3, is characterized in that: described the first metal layer, between the second metal level and the 3rd metal level for dielectric layer, described first through hole and the second through hole are arranged in dielectric layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520802559.6U CN205016322U (en) | 2015-10-13 | 2015-10-13 | Inductor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520802559.6U CN205016322U (en) | 2015-10-13 | 2015-10-13 | Inductor structure |
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| Publication Number | Publication Date |
|---|---|
| CN205016322U true CN205016322U (en) | 2016-02-03 |
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| CN201520802559.6U Active CN205016322U (en) | 2015-10-13 | 2015-10-13 | Inductor structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585415A (en) * | 2018-11-12 | 2019-04-05 | 西安理工大学 | A kind of ring type spiral inductor based on TSV |
| CN111584458A (en) * | 2020-04-02 | 2020-08-25 | 西安理工大学 | A compact tunable three-dimensional inductor |
-
2015
- 2015-10-13 CN CN201520802559.6U patent/CN205016322U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585415A (en) * | 2018-11-12 | 2019-04-05 | 西安理工大学 | A kind of ring type spiral inductor based on TSV |
| CN111584458A (en) * | 2020-04-02 | 2020-08-25 | 西安理工大学 | A compact tunable three-dimensional inductor |
| CN111584458B (en) * | 2020-04-02 | 2024-02-23 | 西安理工大学 | Compact structure's adjustable three-dimensional inductor |
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| C14 | Grant of patent or utility model | ||
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| TR01 | Transfer of patent right |
Effective date of registration: 20180521 Address after: No. 18 Zhangjiang Road, Pudong New Area, Shanghai Co-patentee after: Core integrated circuit (Ningbo) Co., Ltd. Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 100176 Beijing Daxing District Daxing District economic and Technological Development Zone (Yizhuang) Wenchang Avenue 18 Co-patentee before: Semiconductor Manufacturing International (Shanghai) Corporation Patentee before: Semiconductor Manufacturing International (Beijing) Corporation |