CN111584345A - Preparation method for improving heat dissipation performance of silicon carbide power device - Google Patents

Preparation method for improving heat dissipation performance of silicon carbide power device Download PDF

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Publication number
CN111584345A
CN111584345A CN202010465615.7A CN202010465615A CN111584345A CN 111584345 A CN111584345 A CN 111584345A CN 202010465615 A CN202010465615 A CN 202010465615A CN 111584345 A CN111584345 A CN 111584345A
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layer
silicon carbide
sic material
material layer
heat dissipation
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Inventor
王东
严伟伟
吴勇
陈兴
严琴
何滇
汪琼
陆俊
葛林男
王俊杰
穆潘潘
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Wuhu Research Institute of Xidian University
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Wuhu Research Institute of Xidian University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds

Abstract

The invention discloses a preparation method for improving the heat dissipation performance of a silicon carbide power device, which belongs to the technical field of microelectronics, and the device comprises a highly doped diamond substrate layer, a SiC material layer and SiO which are sequentially stacked from bottom to top2Mask layer, metal layer and Si3N4The invention grows the substrate of the highly doped diamond layer on the C surface of the SiC material layer, utilizes the high thermal conductivity of diamond, the heat dispersion is good, the on-resistance of the device is low, the thermal stability is better, and then increase the heat dispersion efficiency, can effectively increase the heat dispersion speed of the silicon carbide power device, reduce the on-resistance of the silicon carbide power device, thus enhance the working performance of the device.

Description

Preparation method for improving heat dissipation performance of silicon carbide power device
Technical Field
The invention belongs to the technical field of microelectronics, and relates to a preparation method of a silicon carbide power device, which utilizes the higher thermal conductivity of diamond, thereby effectively increasing the heat dissipation speed and effectively solving the heat dissipation problem of the silicon carbide device.
Background
The diamond material has the excellent characteristics of ultra-wide band gap, high thermal conductivity, high critical breakdown field strength, high carrier saturation drift velocity and the like as an ultra-wide bandgap semiconductor material, the advantages provide favorable conditions for the diamond to be used as a high-performance power device, and a power device substrate prepared by the diamond has the advantages of low on-resistance, good high-temperature stability and the like.
The SiC material is used as a wide bandgap semiconductor material, has the advantages of higher breakdown voltage, higher electronic saturation velocity and the like, and the traditional silicon carbide device conducts heat through self thermal conductivity, so that the heat dissipation effect is not obvious enough, and the improvement is needed to be carried out to increase the heat dissipation efficiency.
Disclosure of Invention
The invention aims to solve the problem of heat dissipation of the existing silicon carbide MOSFET device, and provides a silicon carbide power device and a preparation method for improving the heat dissipation performance of the silicon carbide power device, which can improve the stability of the silicon carbide MOSFET device and reduce the on-resistance of the silicon carbide device.
A preparation method for improving the heat dissipation performance of a silicon carbide power device comprises the following steps:
(1) growing a substrate layer of diamond on one surface of the SiC material layer;
(2) manufacturing an ohmic contact electrode on the other surface of the SiC material layer;
(3) performing ion implantation on one surface of the SiC material layer on which the ohmic electrode is manufactured to form a p-type or n-type semiconductor which becomes a source electrode region and a drain electrode region;
(4) depositing SiO on the surface of the SiC material layer for manufacturing the ohmic contact electrode2A mask layer;
(5) sequentially depositing four metals of Ti/Al/Ni/Au or Ti/Al/Mo/Au on the surface of the SiC material layer with the mask, and carrying out a stripping process after the deposition is finished to remove redundant metals;
(6) and carrying out rapid thermal annealing treatment in inert gas, and manufacturing an ohmic contact electrode on the other surface of the SiC material layer.
Preferably, the step (1) is carried out by growing the highly doped diamond layer by microwave plasma chemical vapor deposition, and the pressure of the reaction chamber is 2 × 104Pa, the growth temperature of the diamond layer is 800-1000 ℃, the growth time is 10-100h, and the growth thickness of the diamond is 50-100 μm.
Preferably, the method of step (3) is specifically: and performing ion implantation on the other surface of the SiC material layer to form a p-type or n-type semiconductor, wherein in the case of the p-type, aluminum boron is implanted into the silicon carbide layer as impurity ions, in the case of the n-type, phosphorus nitrogen is implanted into the silicon carbide layer as impurity ions, and the ion implanted parts become source and drain regions of the MOSFET.
Preferably, the method of step (4) is specifically: depositing SiO on the surface of the ohmic contact electrode made on the other surface of the SiC material layer2Mask layer, mask for making ohmic contact electrode, and deposition of SiO by plasma chemical vapor deposition 22 μm thick, using a gas and SiH at a flow rate of 400sccm4He, 800sccm N2O, and N of 750sccm2The pressure is 900mtorr and the temperature is between 140 ℃ and 300 ℃.
Preferably, the following operations are executed after the method of step (4) is finished: in the SiO2Coating photoresist on the mask layer, and transferring the pattern on the photoetching plate onto the photoresist, thereby facilitating the processAnd continuing to transfer the pattern to the mask layer in the subsequent process, and cleaning the ohmic electrode area after photoetching.
Preferably, the thicknesses of the four metal layers in the step (5) are respectively 20nm, 50nm, 30nm and 10 nm.
Preferably, the annealing process in the step (6) is as follows: the annealing temperature was 900 ℃ and the annealing time was 30 s.
The silicon carbide power device obtained by the method comprises a highly-doped diamond substrate layer, a SiC material layer and SiO which are sequentially stacked from bottom to top2Mask layer, metal layer, Si3N4An insulating layer.
According to the invention, the diamond layer substrate is grown on one surface of the SiC material layer by adopting the MPCVD process, the diamond is directly contacted with the silicon carbide material, the high thermal conductivity of the diamond is utilized, the heat dissipation performance is good, and the heat dissipation effect of the silicon carbide device is increased, so that the on-resistance of the device is reduced, the device has good thermal stability, the heat dissipation problem of the silicon carbide device is effectively solved, the working efficiency of the device is improved, and the preparation process is simple.
Drawings
FIGS. 1 to 6 are schematic views of steps (2), (4), (5), (6), (7) and (9) of the present invention, respectively.
FIG. 7 shows the results of product performance tests obtained in examples of the present invention.
Wherein: substrate layer-101, SiC material layer-102, SiO2Mask layer-103, metal layer-104, and passivation insulating layer-105.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
The silicon carbide power device with good heat dissipation performance comprises a highly-doped diamond substrate layer 101, a SiC material layer 102, and a SiO layer which are sequentially stacked from bottom to top2Mask layer 103, metal layer 104, Si3N4The insulating layer 105 is specifically prepared by the following method:
example 1
(1) Standard RCA cleaning is carried out on the P-type SiC material, and the main function is to remove dust and various pollutants on the surface of the 4H-SiC material and enhance the adhesive force of the surface;
(2) on the basis of the previous steps, a substrate layer 101 of highly doped diamond is grown on one C surface of a SiC material layer 102 by MPCVD, and the pressure of a reaction chamber is 2 × 104Pa, the growth temperature of the diamond layer is 800 ℃, the growth time is 10 hours, and the growth thickness of the diamond is 50 μm, as shown in figure 1;
(3) on the basis of the steps, the other surface of the SiC material layer 102 is polished and thinned, so that the thickness of the SiC material layer is reduced, and the heat dissipation speed can be increased;
(4) in addition to the above steps, ion implantation is performed on the Si surface of the other surface of the SiC material layer 102, and ions are implanted into the silicon carbide material layer using phosphorus as an impurity to form an n-type semiconductor channel as source and drain regions, as shown in fig. 2;
(5) on the basis of the above steps, ohmic contact electrodes are formed on the surface of the n-type semiconductor channel in the SiC material layer 102, and SiO is deposited2A mask layer 103 for forming a mask for ohmic contact electrode by plasma CVD to deposit SiO 22 μm thick, using a gas and SiH at a flow rate of 400sccm4He, 800sccm N2O, and N of 750sccm2A pressure of 900mtorr and a temperature of 140 ℃, as shown in fig. 3;
(6) on the basis of the previous steps, a photoresist is coated on the SiO2 mask layer 103, and the pattern on the photoetching plate is transferred to the photoresist, so that the pattern can be continuously transferred to the mask layer by the subsequent process, and the photoetched ohmic electrode area is cleaned, as shown in FIG. 4;
(7) on the basis of the steps, metal deposition is carried out by adopting an electron beam evaporation technology, an evaporation metal layer 104 is manufactured on the surface of the ohmic contact electrode on the SiC material layer 102, four metals of Ti/Al/Ni/Au or Ti/Al/Mo/Au are sequentially deposited, and the thicknesses of the four metal layers are respectively 20nm/50nm/30nm/10nm as shown in figure 5;
(8) on the basis of the steps, annealing the material, wherein the annealing temperature is 900 ℃, and the annealing time is 30 s;
(9) on the basis of the foregoing steps, an insulating layer 105 is uniformly grown on the surface of the SiC material layer 102 and the metal layer 105 by Plasma Enhanced Chemical Vapor Deposition (PECVD) or Physical Vapor Deposition (PVD), as shown in fig. 6.
Example 2
(1) Standard RCA cleaning is carried out on the P-type SiC material, and the main function is to remove dust and various pollutants on the surface of the 4H-SiC material and enhance the adhesive force of the surface;
(2) on the basis of the previous steps, a substrate layer 101 of highly doped diamond is grown on one C surface of a SiC material layer 102 by MPCVD, and the pressure of a reaction chamber is 2 × 104Pa, the growth temperature of the diamond layer is 900 ℃, the growth time is 45h, and the growth thickness of the diamond is 80 μm, as shown in figure 1;
(3) on the basis of the steps, the other surface of the SiC material layer 102 is polished and thinned, so that the thickness of the SiC material layer is reduced, and the heat dissipation speed can be increased;
(4) in addition to the above steps, ion implantation is performed on the Si surface of the other surface of the SiC material layer 102, and ions are implanted into the silicon carbide material layer using phosphorus as an impurity to form an n-type semiconductor channel as source and drain regions, as shown in fig. 2;
(5) on the basis of the above steps, ohmic contact electrodes are formed on the surface of the n-type semiconductor channel in the SiC material layer 102, and SiO is deposited2A mask layer 103 for forming a mask for ohmic contact electrode by plasma CVD to deposit SiO 22 μm thick, using a gas and SiH at a flow rate of 400sccm4He, 800sccm N2O, and N of 750sccm2A pressure of 900mtorr and a temperature of between 200 ℃, as shown in fig. 3;
(6) on the basis of the previous steps, a photoresist is coated on the SiO2 mask layer 103, and the pattern on the photoetching plate is transferred to the photoresist, so that the pattern can be continuously transferred to the mask layer by the subsequent process, and the photoetched ohmic electrode area is cleaned, as shown in FIG. 4;
(7) on the basis of the steps, metal deposition is carried out by adopting an electron beam evaporation technology, an evaporation metal layer 104 is manufactured on the surface of the ohmic contact electrode on the SiC material layer 102, four metals of Ti/Al/Ni/Au or Ti/Al/Mo/Au are sequentially deposited, and the thicknesses of the four metal layers are respectively 20nm/50nm/30nm/10nm as shown in figure 5;
(8) on the basis of the steps, annealing the material, wherein the annealing temperature is 900 ℃, and the annealing time is 30 s;
(9) on the basis of the foregoing steps, an insulating layer 105 is uniformly grown on the surface of the SiC material layer 102 and the metal layer 105 by Plasma Enhanced Chemical Vapor Deposition (PECVD) or Physical Vapor Deposition (PVD), as shown in fig. 6.
Example 3
(1) Standard RCA cleaning is carried out on the P-type SiC material, and the main function is to remove dust and various pollutants on the surface of the 4H-SiC material and enhance the adhesive force of the surface;
(2) on the basis of the previous steps, a substrate layer 101 of highly doped diamond is grown on one C surface of a SiC material layer 102 by MPCVD, and the pressure of a reaction chamber is 2 × 104Pa, the growth temperature of the diamond layer is 1000 ℃, the growth time is 100h, and the growth thickness of the diamond is 100 mu m, as shown in figure 1;
(3) on the basis of the steps, the other surface of the SiC material layer 102 is polished and thinned, so that the thickness of the SiC material layer is reduced, and the heat dissipation speed can be increased;
(4) in addition to the above steps, ion implantation is performed on the Si surface of the other surface of the SiC material layer 102, and ions are implanted into the silicon carbide material layer using phosphorus as an impurity to form an n-type semiconductor channel as source and drain regions, as shown in fig. 2;
(5) on the basis of the above steps, ohmic contact electrodes are formed on the surface of the n-type semiconductor channel in the SiC material layer 102, and SiO is deposited2A mask layer 103 for forming a mask for ohmic contact electrode by plasma CVD to deposit SiO 22 μm thick, using a gas and SiH at a flow rate of 400sccm4He, 800sccm N2O, and N of 750sccm2A pressure of 900mtorr and a temperature of between 300 ℃, as shown in fig. 3;
(6) on the basis of the previous steps, a photoresist is coated on the SiO2 mask layer 103, and the pattern on the photoetching plate is transferred to the photoresist, so that the pattern can be continuously transferred to the mask layer by the subsequent process, and the photoetched ohmic electrode area is cleaned, as shown in FIG. 4;
(7) on the basis of the steps, metal deposition is carried out by adopting an electron beam evaporation technology, an evaporation metal layer 104 is manufactured on the surface of the ohmic contact electrode on the SiC material layer 102, four metals of Ti/Al/Ni/Au or Ti/Al/Mo/Au are sequentially deposited, and the thicknesses of the four metal layers are respectively 20nm/50nm/30nm/10nm as shown in figure 5;
(8) on the basis of the steps, annealing the material, wherein the annealing temperature is 900 ℃, and the annealing time is 30 s;
(9) on the basis of the foregoing steps, an insulating layer 105 is uniformly grown on the surface of the SiC material layer 102 and the metal layer 105 by Plasma Enhanced Chemical Vapor Deposition (PECVD) or physical vapor deposition (CVD), as shown in fig. 6.
The product obtained by the method of the embodiment is subjected to performance test, the power devices are assembled into a simple working system, the silicon carbide power devices with the conventional silicon-based substrate are assembled into the simple working system, the same input power and output load are set by using the same controller, the temperature of the devices at the same position is tested at intervals, and the data result is shown in fig. 7, which shows that the silicon carbide power devices with the diamond substrate can rapidly dissipate heat and effectively reduce the on-resistance, wherein the temperature is from 20 ℃ to 138 ℃, the on-resistance is increased by 29%, and the temperature of the silicon-based substrate power devices is from 35 ℃ to 169 ℃, and the on-resistance is increased by 42%.
It will be appreciated by those skilled in the art that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The embodiments disclosed above are therefore to be considered in all respects as illustrative and not restrictive. All changes which come within the scope of or equivalence to the invention are intended to be embraced therein.

Claims (8)

1. A preparation method for improving the heat dissipation performance of a silicon carbide power device is characterized by comprising the following steps:
(1) a substrate layer (101) of diamond is grown on one surface of the SiC material layer (102);
(2) manufacturing an ohmic contact electrode on the other surface of the SiC material layer (102);
(3) performing ion implantation on one surface of the SiC material layer (102) on which the ohmic electrode is manufactured to form a p-type or n-type semiconductor which becomes a source electrode region and a drain electrode region;
(4) depositing SiO on the surface of the SiC material layer (102) for manufacturing the ohmic contact electrode2A mask layer (103);
(5) sequentially depositing four metals of Ti/Al/Ni/Au or Ti/Al/Mo/Au on the surface of the SiC material layer (102) with the mask, and stripping after the deposition is finished to remove redundant metals;
(6) and carrying out rapid thermal annealing treatment in inert gas, and manufacturing an ohmic contact electrode on the other surface of the SiC material layer.
2. The method for improving the heat dissipation performance of the silicon carbide power device as claimed in claim 1, wherein the step (1) is carried out by growing the highly doped diamond layer by microwave plasma chemical vapor deposition, and the pressure of the reaction chamber is 2 × 104Pa, the growth temperature of the diamond layer is 800-1000 ℃, the growth time is 10-100h, and the growth thickness of the diamond is 50-100 μm.
3. The preparation method for improving the heat dissipation performance of the silicon carbide power device according to claim 1, wherein the method of the step (3) is specifically as follows: and performing ion implantation on the other surface of the SiC material layer to form a p-type or n-type semiconductor, wherein in the case of the p-type, aluminum boron is implanted into the silicon carbide layer as impurity ions, in the case of the n-type, phosphorus nitrogen is implanted into the silicon carbide layer as impurity ions, and the ion implanted parts become source and drain regions of the MOSFET.
4. The preparation method of claim 1, wherein the preparation method is used for improving the heat dissipation performance of the silicon carbide power deviceCharacterized in that, the method of the step (4) is specifically as follows: depositing SiO on the surface of the ohmic contact electrode made on the other surface of the SiC material layer2A mask layer (103) for forming a mask for ohmic contact electrode by depositing SiO by plasma CVD22 μm thick, using a gas and SiH at a flow rate of 400sccm4He, 800sccm N2O, and N of 750sccm2The pressure is 900mtorr and the temperature is between 140 ℃ and 300 ℃.
5. The preparation method for improving the heat dissipation performance of the silicon carbide power device according to claim 4, wherein the following operations are performed after the method of step (4) is finished: in the SiO2And coating photoresist on the mask layer, and transferring the pattern on the photoetching plate to the photoresist, so that the pattern can be continuously transferred to the mask layer by a subsequent process, and the photoetched ohmic electrode area can be cleaned.
6. The preparation method for improving the heat dissipation performance of the silicon carbide power device as claimed in claim 1, wherein the thicknesses of the four metal layers in the step (5) are 20nm, 50nm, 30nm and 10nm respectively.
7. The preparation method for improving the heat dissipation performance of the silicon carbide power device according to claim 1, wherein the annealing process in the step (6) is as follows: the annealing temperature is 900 ℃, the annealing time is 30 s: .
8. A silicon carbide power device obtained by the method according to claim 1, which comprises a highly doped diamond substrate layer (101), a SiC material layer (102) and a SiO layer which are sequentially stacked from bottom to top2A mask layer (103), a metal layer (104), Si3N4An insulating layer (105).
CN202010465615.7A 2020-05-28 2020-05-28 Preparation method for improving heat dissipation performance of silicon carbide power device Pending CN111584345A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050280114A1 (en) * 2004-06-03 2005-12-22 Ranbir Singh Lateral power diodes
CN107993926A (en) * 2017-12-01 2018-05-04 西安电子科技大学 The preparation method of carborundum Ohmic contact
CN109524298A (en) * 2018-11-21 2019-03-26 中国电子科技集团公司第十三研究所 The production method and silicon carbide device of the non-alloyed Ohmic contact of silicon carbide device
CN110785855A (en) * 2017-06-14 2020-02-11 Hrl实验室有限责任公司 Transverse fin type electrostatic induction transistor
CN110828293A (en) * 2018-08-13 2020-02-21 西安电子科技大学 Semiconductor device based on SiC/diamond composite substrate layer and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050280114A1 (en) * 2004-06-03 2005-12-22 Ranbir Singh Lateral power diodes
CN110785855A (en) * 2017-06-14 2020-02-11 Hrl实验室有限责任公司 Transverse fin type electrostatic induction transistor
CN107993926A (en) * 2017-12-01 2018-05-04 西安电子科技大学 The preparation method of carborundum Ohmic contact
CN110828293A (en) * 2018-08-13 2020-02-21 西安电子科技大学 Semiconductor device based on SiC/diamond composite substrate layer and preparation method thereof
CN109524298A (en) * 2018-11-21 2019-03-26 中国电子科技集团公司第十三研究所 The production method and silicon carbide device of the non-alloyed Ohmic contact of silicon carbide device

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