CN111566567A - Cleaning agent composition for resin mask stripping - Google Patents
Cleaning agent composition for resin mask stripping Download PDFInfo
- Publication number
- CN111566567A CN111566567A CN201880084864.2A CN201880084864A CN111566567A CN 111566567 A CN111566567 A CN 111566567A CN 201880084864 A CN201880084864 A CN 201880084864A CN 111566567 A CN111566567 A CN 111566567A
- Authority
- CN
- China
- Prior art keywords
- component
- mass
- cleaning agent
- resin mask
- agent composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000203 mixture Substances 0.000 title claims abstract description 155
- 239000011347 resin Substances 0.000 title claims abstract description 135
- 229920005989 resin Polymers 0.000 title claims abstract description 135
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 117
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000003960 organic solvent Substances 0.000 claims abstract description 26
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims description 51
- 239000007788 liquid Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 48
- 239000003599 detergent Substances 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 28
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 claims description 20
- -1 nitrogen-containing compound Chemical class 0.000 claims description 20
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 claims description 18
- GNKZMNRKLCTJAY-UHFFFAOYSA-N 4'-Methylacetophenone Chemical compound CC(=O)C1=CC=C(C)C=C1 GNKZMNRKLCTJAY-UHFFFAOYSA-N 0.000 claims description 16
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 16
- ZRSNZINYAWTAHE-UHFFFAOYSA-N p-methoxybenzaldehyde Chemical compound COC1=CC=C(C=O)C=C1 ZRSNZINYAWTAHE-UHFFFAOYSA-N 0.000 claims description 16
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 14
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000011161 development Methods 0.000 claims description 13
- ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 2-octanone Chemical compound CCCCCCC(C)=O ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 10
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 claims description 9
- DLRJIFUOBPOJNS-UHFFFAOYSA-N phenetole Chemical compound CCOC1=CC=CC=C1 DLRJIFUOBPOJNS-UHFFFAOYSA-N 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- GFISDBXSWQMOND-UHFFFAOYSA-N 2,5-dimethoxyoxolane Chemical compound COC1CCC(OC)O1 GFISDBXSWQMOND-UHFFFAOYSA-N 0.000 claims description 7
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 claims description 7
- SKTCDJAMAYNROS-UHFFFAOYSA-N methoxycyclopentane Chemical compound COC1CCCC1 SKTCDJAMAYNROS-UHFFFAOYSA-N 0.000 claims description 7
- KRIOVPPHQSLHCZ-UHFFFAOYSA-N propiophenone Chemical compound CCC(=O)C1=CC=CC=C1 KRIOVPPHQSLHCZ-UHFFFAOYSA-N 0.000 claims description 7
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 7
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 6
- PKZJLOCLABXVMC-UHFFFAOYSA-N 2-Methoxybenzaldehyde Chemical compound COC1=CC=CC=C1C=O PKZJLOCLABXVMC-UHFFFAOYSA-N 0.000 claims description 6
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 6
- 150000007529 inorganic bases Chemical class 0.000 claims description 6
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 34
- 239000000126 substance Substances 0.000 description 31
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 26
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 21
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 235000010724 Wisteria floribunda Nutrition 0.000 description 15
- 238000007747 plating Methods 0.000 description 14
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 10
- 239000000243 solution Substances 0.000 description 9
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 8
- 238000004065 wastewater treatment Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000012141 concentrate Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 125000001453 quaternary ammonium group Chemical group 0.000 description 7
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 6
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 6
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 6
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 5
- 239000000908 ammonium hydroxide Substances 0.000 description 5
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229910000029 sodium carbonate Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229940043276 diisopropanolamine Drugs 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 238000012851 eutrophication Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 235000011007 phosphoric acid Nutrition 0.000 description 4
- 150000003016 phosphoric acids Chemical class 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 3
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 3
- RKTGAWJWCNLSFX-UHFFFAOYSA-M bis(2-hydroxyethyl)-dimethylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(C)CCO RKTGAWJWCNLSFX-UHFFFAOYSA-M 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000013067 intermediate product Substances 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 150000007530 organic bases Chemical class 0.000 description 3
- 229910000027 potassium carbonate Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 2
- WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical group CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000004111 Potassium silicate Substances 0.000 description 2
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical group C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 2
- 229920000297 Rayon Polymers 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 2
- 239000000920 calcium hydroxide Substances 0.000 description 2
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 2
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 2
- 229960001231 choline Drugs 0.000 description 2
- MYRLVAHFNOAIAI-UHFFFAOYSA-M diethyl-bis(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CC)(CC)CCO MYRLVAHFNOAIAI-UHFFFAOYSA-M 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 2
- 229940102253 isopropanolamine Drugs 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 125000004193 piperazinyl group Chemical group 0.000 description 2
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 2
- 229910052913 potassium silicate Inorganic materials 0.000 description 2
- 235000019353 potassium silicate Nutrition 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 2
- 239000002964 rayon Substances 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 239000002351 wastewater Substances 0.000 description 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- CWKVFRNCODQPDB-UHFFFAOYSA-N 1-(2-aminoethylamino)propan-2-ol Chemical compound CC(O)CNCCN CWKVFRNCODQPDB-UHFFFAOYSA-N 0.000 description 1
- PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 description 1
- XKQMKMVTDKYWOX-UHFFFAOYSA-N 1-[2-hydroxypropyl(methyl)amino]propan-2-ol Chemical compound CC(O)CN(C)CC(C)O XKQMKMVTDKYWOX-UHFFFAOYSA-N 0.000 description 1
- ZUAURMBNZUCEAF-UHFFFAOYSA-N 2-(2-phenoxyethoxy)ethanol Chemical compound OCCOCCOC1=CC=CC=C1 ZUAURMBNZUCEAF-UHFFFAOYSA-N 0.000 description 1
- CYOIAXUAIXVWMU-UHFFFAOYSA-N 2-[2-aminoethyl(2-hydroxyethyl)amino]ethanol Chemical compound NCCN(CCO)CCO CYOIAXUAIXVWMU-UHFFFAOYSA-N 0.000 description 1
- RJFMDYQCCOOZHJ-UHFFFAOYSA-L 2-hydroxyethyl(trimethyl)azanium dihydroxide Chemical compound [OH-].[OH-].C[N+](C)(C)CCO.C[N+](C)(C)CCO RJFMDYQCCOOZHJ-UHFFFAOYSA-L 0.000 description 1
- ZFDNAYFXBJPPEB-UHFFFAOYSA-M 2-hydroxyethyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCO ZFDNAYFXBJPPEB-UHFFFAOYSA-M 0.000 description 1
- SHAMRMCOVNDTCS-UHFFFAOYSA-M 2-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC(O)C[N+](C)(C)C SHAMRMCOVNDTCS-UHFFFAOYSA-M 0.000 description 1
- YSDSJBOULHYPCB-UHFFFAOYSA-M 2-hydroxypropyl(tripropyl)azanium hydroxide Chemical compound [OH-].OC(C[N+](CCC)(CCC)CCC)C YSDSJBOULHYPCB-UHFFFAOYSA-M 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 1
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003242 anti bacterial agent Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- IUEJJWYUYRJJBJ-UHFFFAOYSA-M bis(2-hydroxyethyl)-dipropylazanium hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCO)CCO IUEJJWYUYRJJBJ-UHFFFAOYSA-M 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229940043237 diethanolamine Drugs 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- XBRDBODLCHKXHI-UHFFFAOYSA-N epolamine Chemical compound OCCN1CCCC1 XBRDBODLCHKXHI-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- KGVNNTSVYGJCRV-UHFFFAOYSA-M ethyl-tris(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CC)(CCO)CCO KGVNNTSVYGJCRV-UHFFFAOYSA-M 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229940078552 o-xylene Drugs 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 238000001223 reverse osmosis Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- VHLDQAOFSQCOFS-UHFFFAOYSA-M tetrakis(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CCO)(CCO)CCO VHLDQAOFSQCOFS-UHFFFAOYSA-M 0.000 description 1
- MSSZNJYLEVGNAK-UHFFFAOYSA-M tetrakis(2-hydroxypropyl)azanium;hydroxide Chemical compound [OH-].CC(O)C[N+](CC(C)O)(CC(C)O)CC(C)O MSSZNJYLEVGNAK-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
- RBUVMOSJYGXQEK-UHFFFAOYSA-M triethyl(2-hydroxypropyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC(C)O RBUVMOSJYGXQEK-UHFFFAOYSA-M 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- FQSMVJXSANYLPV-UHFFFAOYSA-M tris(2-hydroxyethyl)-propylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCO)(CCO)CCO FQSMVJXSANYLPV-UHFFFAOYSA-M 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Detergent Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Paints Or Removers (AREA)
Abstract
The present invention provides, in one aspect, a cleaning agent composition for resin mask peeling having excellent resin mask removability. In one embodiment, the present invention relates to a cleaning agent composition for resin mask peeling, which contains an alkaline agent (component a), an organic solvent (component B), and water (component C), wherein the coordinates of hansen solubility parameters of component B are at a radius of 5.45MPa centered around d 18.3, p 6.8, and h 3.70.5The content of the component C in the range of (3) is 69.9 to 99.4% by mass.
Description
Technical Field
The present invention relates to a cleaning agent composition for resin mask peeling, a cleaning method using the cleaning agent composition, and a method for manufacturing an electronic component.
Background
In recent years, in personal computers and various electronic devices, power consumption has been reduced, processing speed has been increased, and miniaturization has been advanced, and wiring mounted on a package substrate or the like has been miniaturized year by year. The metal mask method has been mainly used for forming such fine wiring and connection terminals of pillars and bumps, but the versatility is low or it is difficult to cope with miniaturization of wiring and the like, and the progress is being made to another new method.
As one of the new methods, a method of using a dry film resist as a thick film resin mask instead of a metal mask is known. The resin mask is finally peeled off and removed, and at this time, an alkaline cleaning agent for peeling is used.
As such a cleaning agent for stripping, for example, patent document 1 describes a cleaning agent for a low-etching resist, which is characterized in that: contains a quaternary ammonium hydroxide, a specified alkyl glycol aryl ether or a derivative thereof, and (C) acetophenone or a derivative thereof.
Patent document 2 describes a resist stripping solution containing (a) 35 to 80% by mass of an aliphatic alcohol solvent, (B) 10 to 40% by mass of an organic solvent selected from halogen-based hydrocarbon solvents and non-hydroxylated ether solvents, and (C) 0.1 to 25% by mass of a quaternary ammonium salt.
Patent document 3 describes a solution containing: a second solvent comprising dimethyl sulfoxide, a quaternary ammonium hydroxide, a specified alkanolamine, and an alcohol, a polyol, or a combination thereof, and having a water content of 3 mass% or less.
Patent document 4 describes a quasi-aqueous composition which is used for the reprocessing of microelectronic devices and contains at least 1 alkali and/or alkaline earth metal base, at least 1 organic solvent, and water.
Documents of the prior art
Patent document
Patent document 1: international publication No. 2008/071078
Patent document 2: specification of U.S. Pat. No. 5185235
Patent document 3: U.S. patent application publication No. 2014/0155310 specification
Patent document 4: international publication No. 2008/039730
Disclosure of Invention
Problems to be solved by the invention
In the case of forming fine wiring on a printed board or the like, a high cleaning property is required for a cleaning agent composition in order to reduce not only the residue of a resin mask but also the residue of an auxiliary agent or the like contained in solder, a plating solution or the like for forming fine wiring or bumps. The resin mask is formed using a resist whose physical properties such as solubility in a developer change due to light, electron beams, or the like.
Resists are largely classified into negative type and positive type according to the method of reacting with light or electron beams. Negative resists have a characteristic that solubility in a developer decreases when exposed to light, and a layer including a negative resist (hereinafter also referred to as a "negative resist") is exposed to light and developed, and then the exposed portion is used as a resin mask. A positive resist has a characteristic that solubility in a developer increases when exposed to light, and a layer including a positive resist (hereinafter also referred to as a "positive resist") is exposed and developed, and then, an exposed portion is removed, and an unexposed portion is used as a resin mask. By using a resin mask having such characteristics, a fine connection portion of a circuit board of a metal wiring, a metal pillar, or a solder bump can be formed.
However, since the characteristics of the resin mask used for forming these connection portions change due to plating treatment, heating treatment, or the like, the resin mask tends to be difficult to remove in the cleaning step in the next step. In particular, since the negative resist has a characteristic of being cured by a reaction with light or an electron beam, a resin mask formed using the negative resist is not completely removed by a cleaning process because it is cured to an extent more than necessary by a plating process, a heating process, or the like used in forming a connection portion, or it takes a very long time to remove, thereby damaging a substrate or a metal surface. Thus, the resin mask subjected to the plating treatment and/or the heating treatment is difficult to remove, and therefore, high resin mask removability is required for the cleaning agent composition.
On the other hand, miniaturization of wiring has been advanced for miniaturization of electronic devices, speeding up of processing speed, and reduction of power consumption. If the wiring width is narrowed, the resistance may be increased, and heat may be generated, which may degrade the function of the electronic device. In order to reduce the resistance without increasing the area of the wiring board, a measure for increasing the wiring height is taken. Therefore, the resin mask for forming the wiring becomes thick, the area in contact with the wiring increases, and the pitch of the wiring becomes narrow with miniaturization, and the resin mask becomes difficult to remove. In particular, although light of a low wavelength having high energy is used for drawing fine wiring, since the resin mask is thick, the distance from the surface of the resin mask to the substrate becomes long, the reaction rate of photopolymerization by exposure varies between the surface and the substrate contact surface, the reaction on the surface excessively proceeds, and if the permeability is not enhanced, the cleaning agent composition does not permeate from the surface of the resin mask, and the resin mask becomes difficult to remove.
Accordingly, the present invention provides a cleaning agent composition for resin mask peeling having excellent resin mask removability, a cleaning method using the cleaning agent composition, and a method for producing a substrate.
Means for solving the problems
In one aspect, the present invention relates to a cleaning agent composition for stripping a resin mask, comprising: an alkaline agent (component A), an organic solvent (component B) and water (component C), wherein the coordinates of the Hansen solubility parameter of component B are at a radius of 5.45MPa with d-18.3, p-6.8 and h-3.7 as the center0.5The content of the component C in the range of (3) is 69.9 to 99.4% by mass.
The present invention, in one aspect, relates to a cleaning method comprising: and a step of peeling the resin mask from the object to be cleaned to which the resin mask is attached, by using the cleaning agent composition of the present invention.
The present invention relates, in one aspect, to a method of manufacturing an electronic component, including: and a step of peeling the resin mask from the object to be cleaned to which the resin mask is attached, by using the cleaning agent composition of the present invention.
The present invention relates in one aspect to the use of the detergent composition of the present invention as a detergent in the manufacture of electronic components.
In one aspect, the present invention relates to a kit used in any one of the cleaning method of the present invention and the electronic component manufacturing method of the present invention, the kit including a solution (first liquid) containing a component a and a solution (second liquid) containing a component B in a state where the first liquid and the second liquid are not mixed with each other, at least one of the first liquid and the second liquid further containing a part or all of a component C, and the first liquid and the second liquid being mixed at the time of use.
ADVANTAGEOUS EFFECTS OF INVENTION
According to one aspect of the present invention, a cleaning agent composition for resin mask peeling having excellent resin mask removability can be provided.
Detailed Description
In one embodiment, the present invention relates to a cleaning agent composition for resin mask peeling (hereinafter also referred to as "the cleaning agent composition of the present invention") containing an alkaline agent (component a), an organic solvent (component B), and water (component C), wherein the coordinates of hansen solubility parameters of component B are at a radius of 5.45MPa centered on d-18.3, p-6.8, and h-3.70.5The content of the component C is 69.9 mass% to 99.4 mass% in the range of the ball of (3).
According to the present invention, a cleaning agent composition excellent in resin mask removability can be provided. Thus, the cleaning agent composition of the present invention can efficiently remove a resin mask, particularly a resin mask subjected to plating treatment and/or heat treatment. Further, by using the cleaning agent composition of the present invention, high-quality electronic parts can be obtained with high yield. Further, by using the cleaning agent composition of the present invention, an electronic component having a fine wiring pattern can be efficiently produced.
The detailed mechanism of action of the effect of the cleaning agent composition of the present invention is not clear, but can be estimated as follows.
In general, the peeling of the resin mask is considered to be an interfacial stress caused by the components of the cleaning agent composition penetrating into the resin mask and swelling of the resin mask. In the cleaning agent composition of the present invention, it is considered that the resin mask is permeated with an alkaline agent (component a), a predetermined organic solvent (component B) and water (component C), whereby dissociation of an alkali-soluble resin formulated in the resin mask is promoted, and charge repulsion is caused, whereby peeling of the resin mask is promoted. It can be presumed that: at this time, a predetermined organic solvent (component B) acts on the interface between the substrate surface and the resin mask and the interface between the wiring and the resin mask, whereby the adhesion force between the substrate and the resin is reduced to further promote the peeling of the resin mask, and the resin mask removability is remarkably improved. In addition, it is also estimated that: the predetermined organic solvent (component B) acts on the unreacted monomer in the resin mask, and the alkaline agent (component a) and water (component C) penetrate into the resin mask from this position as a starting point, thereby promoting the peeling of the resin mask and significantly improving the resin mask removability. Accordingly, it is considered that a fine circuit (wiring pattern) can be efficiently formed on a substrate with high cleanliness.
However, the present invention is not limited to the explanation of the mechanism.
In recent years, a cleaning agent composition is required to have high resin mask removability, and on the other hand, a substrate containing an organic resin such as an epoxy resin or a phenol resin (hereinafter also referred to as "substrate containing an organic resin") is required to have little influence. This is because: when the cleaning agent composition is dissolved in the surface of the substrate and the substrate is modified, the performance of the substrate required for electronic parts is lowered, and a high-quality substrate cannot be obtained.
In contrast, in the cleaning agent composition of the present invention, the predetermined organic solvent (component B) has the best compatibility with water, and effectively functions even when a large amount of water is present or the amount of component B added is small, and can promote the penetration of the alkaline agent (component a) and water (component C) into the resin mask. Further, by reducing the organic content in the cleaning agent composition of the present invention, the influence on the substrate containing an organic resin can be reduced.
In addition, in various fields, the production amount of printed boards and the like is increasing due to the progress of electronics, and the amount of the cleaning agent composition used is also tending to increase. Further, as the amount of the detergent composition used increases, the load of wastewater treatment of waste liquid such as the detergent composition and the cleaning liquid, and eutrophication of lakes and marshes due to inflow of the waste liquid also increase. Therefore, there is a strong demand for a cleaning agent composition which has a small wastewater treatment load, does not contain nitrogen and phosphorus which cause eutrophication in lakes and marshes, and can efficiently remove a resin mask.
Further, in order to reuse the cleaning liquid with high efficiency, a cleaning liquid composition having a small organic content is strongly required, and an aqueous cleaning liquid composition obtained by easily removing the removed resin mask from the cleaning liquid or the like with a net and peeling the resin mask off is advantageous. However, the method described in the above patent document has a difficulty in achieving both high resin mask removability and a low drainage processing load.
In contrast, in the cleaning agent composition of the present invention, as described above, the predetermined organic solvent (component B) has the best compatibility with water, and effectively functions even when a large amount of water is present or the amount of component B added is small, and the penetration of the alkaline agent (component a) and water (component C) into the resin mask can be promoted. Further, by reducing the organic matter content in the cleaning agent composition of the present invention, an increase in the load of wastewater treatment can be suppressed.
In the present invention, the resin mask means: a mask used for protecting a surface of a substance in a treatment such as self-etching, plating, or heating, that is, a mask functioning as a protective film. In one or more embodiments, the resin mask may be a resist layer after an exposure and development step, a resist layer subjected to at least one of exposure and development (hereinafter, also referred to as "exposure and/or development treatment"), or a cured resist layer. As a resin material for forming the resin mask, in one or more embodiments, a film-like photosensitive resin or a resist film can be exemplified. As the resist film, a general-purpose resist film can be used.
[ component A: alkaline agent
In one or more embodiments, the cleaning agent composition of the present invention comprises an alkaline agent (component a). The component A may be used in 1 kind or 2 or more kinds in combination.
The component a includes, for example, at least 1 selected from an inorganic base and an organic base, and is preferably an inorganic base from the viewpoint of reducing the load of wastewater treatment.
As the inorganic base, there may be mentioned: sodium hydroxide, potassium hydroxide, lithium hydroxide, calcium hydroxide, sodium carbonate, potassium carbonate, sodium silicate, potassium silicate, and the like. Among them, from the viewpoint of improving the resin mask removability, a combination of 1 or 2 or more selected from sodium hydroxide, potassium hydroxide, sodium carbonate and potassium carbonate is preferable, at least one of sodium hydroxide and potassium hydroxide is more preferable, and potassium hydroxide is even more preferable.
As the organic base, there may be mentioned: quaternary ammonium hydroxides represented by the following formula (I), amines represented by the following formula (II), and the like.
[ chemical formula 1]
In the above formula (I), R1、R2、R3And R4Each independently is at least 1 selected from the group consisting of methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl, and hydroxypropyl.
[ chemical formula 2]
In the above formula (II), R5Represents a hydrogen atom, a methyl group, an ethyl group or an aminoethyl group, R6Is at least 1 selected from a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group or an ethyl group, and R7Is at least 1 selected from aminoethyl, hydroxyethyl or hydroxypropyl, or, in formula (II), R5Is at least 1 selected from methyl, ethyl, aminoethyl, hydroxyethyl or hydroxypropyl, and R6And R7Bonded to each other and form a pyrrolidine ring or a piperazine ring together with the N atom in formula (II).
Examples of the quaternary ammonium hydroxide represented by the formula (I) include salts containing a quaternary ammonium cation and a hydroxide group. Specific examples of the quaternary ammonium hydroxide include: selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrapropylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide (choline), 2-hydroxyethyltriethylammonium hydroxide, 2-hydroxyethyltripropylammonium hydroxide, 2-hydroxypropyltrimethylammonium hydroxide, 2-hydroxypropyltriethylammonium hydroxide, at least 1 member selected from the group consisting of 2-hydroxypropyltripropylammonium hydroxide, dimethylbis (2-hydroxyethyl) ammonium hydroxide, diethylbis (2-hydroxyethyl) ammonium hydroxide, dipropylbis (2-hydroxyethyl) ammonium hydroxide, tris (2-hydroxyethyl) methylammonium hydroxide, tris (2-hydroxyethyl) ethylammonium hydroxide, tris (2-hydroxyethyl) propylammonium hydroxide, tetrakis (2-hydroxyethyl) ammonium hydroxide and tetrakis (2-hydroxypropyl) ammonium hydroxide. Among them, from the viewpoint of improving the resin mask removability, at least 1 kind selected from the group consisting of tetramethylammonium hydroxide (TMAH), 2-hydroxyethyltrimethylammonium hydroxide (choline), dimethylbis (2-hydroxyethyl) ammonium hydroxide and diethylbis (2-hydroxyethyl) ammonium hydroxide is preferable, at least 1 kind selected from the group consisting of tetramethylammonium hydroxide (TMAH), 2-hydroxyethyltrimethylammonium hydroxide (choline) and dimethylbis (2-hydroxyethyl) ammonium hydroxide is more preferable, and tetramethylammonium hydroxide (TMAH) is even more preferable.
Examples of the amine represented by the formula (II) include alkanolamines, primary to tertiary amines, and heterocyclic compounds. Specific examples of the amines include: selected from the group consisting of monoethanolamine, monoisopropanolamine, N-methyl monoethanolamine, N-methyl isopropanolamine, N-ethyl monoethanolamine, N-ethyl isopropanolamine, diethanolamine, diisopropanolamine, N-dimethyl monoethanolamine, N-dimethyl monoisopropanolamine, N-methyl diethanolamine, N-methyl diisopropanolamine, N-diethyl monoethanolamine, N-diethyl monoisopropanolamine, N-ethyl diethanolamine, N-ethyl diisopropanolamine, N- (. beta. -aminoethyl) ethanolamine, N- (. beta. -aminoethyl) isopropanolamine, N- (. beta. -aminoethyl) diethanolamine, N- (. beta. -aminoethyl) diisopropanolamine, 1-methylpiperazine, 1- (2-hydroxyethyl) pyrrolidine, N- (N-methyl isopropanolamine, N-ethyl isopropanolamine, N-methyl diethanolamine, N- (beta-aminoethyl) diethanolamine, N- (beta-ethyl) diisopropanolamine, N, 1- (2-hydroxyethyl) piperazine, ethylenediamine and diethylenetriamine. Among them, from the viewpoint of improving the resin mask removability, at least 1 selected from the group consisting of monoethanolamine, monoisopropanolamine, diethanolamine, N-methylmonoethanolamine, N-ethylmonoethanolamine, N- (. beta. -aminoethyl) ethanolamine, 1- (2-hydroxyethyl) piperazine and diethylenetriamine is preferable, at least 1 selected from the group consisting of monoethanolamine, monoisopropanolamine, diethanolamine, N-methylmonoethanolamine and N-ethylmonoethanolamine is more preferable, and monoethanolamine is even more preferable.
The content of the component a in the use of the cleaning agent composition of the present invention is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, further preferably 1.0% by mass or more, and further preferably 1.5% by mass or more from the viewpoint of improving the resin mask removability, and is preferably 15% by mass or less, more preferably 10% by mass or less, further preferably 7.5% by mass or less, and further preferably 5% by mass or less from the viewpoint of improving the resin mask removability. More specifically, the content of the component a in use is preferably 0.1% by mass or more and 15% by mass or less, more preferably 0.5% by mass or more and 10% by mass or less, still more preferably 1.0% by mass or more and 7.5% by mass or less, and still more preferably 1.5% by mass or more and 5% by mass or less. When the component a contains 2 or more alkaline agents, the content of the component a means the total content thereof.
In the present invention, the "content of each component at the time of use of the detergent composition" means the content of each component at the time of cleaning, that is, at the time of starting cleaning with the detergent composition.
[ component B: organic solvent ]
In one or more embodiments, the cleaning agent composition of the present invention includes an organic solvent (component B). The component B may be used in 1 kind or 2 or more kinds in combination.
In the present invention, the hansen solubility parameter of component B is plotted at a radius of 5.45MPa centered at d 18.3, p 6.8, and h 3.70.5Within the sphere of (1). When the cleaning agent composition of the present invention contains 2 or more organic solvents (hereinafter, also referred to as "mixed organic solvents"), the hansen solubility parameter of the whole mixed organic solvent may not fall within the above range, and the effect of the present invention can be exerted if the mixed organic solvent contains at least 1 organic solvent having a hansen solubility parameter within the above range.
Here, Hansen solubility parameter (hereinafter also referred to as "HSP") is a value published in 1967 by Charles m. HSP contains the following 3 parameters (units: MPa)0.5)。
d: energy obtained by utilizing intermolecular dispersion force
p: energy obtained by using dipolar interaction between molecules
h: energy derived from intermolecular hydrogen bonding
These 3 parameters can be regarded as coordinates of a three-dimensional space (hansen space), and indicate that when HSP of 2 substances is placed in hansen space, the closer the distance between two points is, the easier they are to dissolve each other. Chemical industry No. 3/2010 (chemical industry corporation), etc., are explained in detail, and a personal computer software "HSPiP: hansen Solubility Parameters for various materials are available from Hansen Solubility Parameters in practice, and the like. The present invention uses the hansen solubility parameter, which is a value obtained by using the personal computer software "HSPiP: hansen Solubility Parameters in Practice ". In the case where the component B is a mixed organic solvent of 2 or more species, the "HSPiP: HSP calculation function of the mixed organic solvent of Hansen Solubility Parameters in Practice' was calculated.
The coordinates of HSP of component B in the present invention can also be expressed as follows. That is, the coordinates of HSP of component B are expressed as (d)B、pB、hB) The coordinates (d) of HSP of component BB、pB、hB) Distance from component coordinate X (d 18.3, p 6.8, h 3.7) (unit: MPa of0.5) The following equation can be satisfied.
Distance ═ d [ ([ d ]) ]B－18.3)2+(pB－6.8)2+(hB－3.7)2]0.5≤5.45MPa0.5The component B is not particularly limited as long as the component B is an organic solvent in which the distance between the HSP coordinates and the component coordinates X of the component B satisfies the above formula, and examples thereof include: selected from acetophenone (distance: 2.44 MPa)0.5) Propiophenone (distance: 0.65MPa0.5) P-anisaldehyde (distance: 5.15MPa0.5) O-anisaldehyde (distance: 2.43MPa0.5) P-methylacetophenone (distance: 1.23MPa0.5) Tetrahydrofuran (distance: 5.36MPa0.5) Dimethoxytetrahydrofuran (distance: 5.42MPa0.5) Methoxycyclopentane (distance: 4.10MPa0.5) Diphenyl ether (distance: 3.83MPa0.5) Anisole (distance: 4.12MPa0.5) Phenetole(distance: 2.33 MPa)0.5) Diethylene glycol diethyl ether (distance: 5.42MPa0.5) Dipropylene glycol dimethyl ether (distance: 5.44MPa0.5) Cyclohexanone (distance: 2.35MPa0.5) 2-octanone (distance: 4.73MPa0.5) And benzaldehyde (distance: 2.79MPa0.5)1 or a combination of 2 or more thereof. From the viewpoint of improving the resin mask removability, a combination of 1 or 2 or more selected from acetophenone, propiophenone, p-anisaldehyde, o-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, diphenyl ether, anisole, phenetole, diethylene glycol diethyl ether, dipropylene glycol dimethyl ether, cyclohexanone, 2-octanone and benzaldehyde is preferable, a combination of 1 or 2 or more selected from acetophenone, propiophenone, p-anisaldehyde, o-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, anisole, phenetole, diethylene glycol diethyl ether, cyclohexanone and benzaldehyde is more preferable, and a combination of 1 or 2 or more selected from acetophenone, propiophenone, p-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, o-xylene, or benzaldehyde is more preferable, The combination of 1 or 2 or more of anisole, phenetole, cyclohexanone and benzaldehyde, and more preferably 1 or 2 or more of acetophenone, p-anisaldehyde, p-methylacetophenone, phenetole, cyclohexanone and benzaldehyde. The numerical value in parentheses represents the distance (unit: MPa) between the coordinates of HSP of component B and the coordinates of component X0.5)。
From the viewpoint of reduction in the risk of fire due to ignition and durability, component B in the present invention preferably has a high boiling point. For example, the boiling point of the component B is preferably 160 ℃ or higher, more preferably 200 ℃ or higher.
In the present invention, the solubility of the component B in water is preferably high from the viewpoint of concentration, and for example, the solubility of the component B in 100mL of water is preferably 0.3g or more.
The content of the component B in the use of the cleaning agent composition of the present invention is preferably 0.5% by mass or more, more preferably 1% by mass or more, further preferably 3% by mass or more, and further preferably 5% by mass or more from the viewpoint of improving the resin mask removability, and is preferably 30% by mass or less, more preferably 25% by mass or less, further preferably 20% by mass or less, and further preferably 15% by mass or less from the viewpoint of reducing the load of the drainage treatment and the influence on the substrate containing the organic resin. More specifically, the content of the component B in use is preferably 0.5% by mass or more and 30% by mass or less, more preferably 1% by mass or more and 25% by mass or less, still more preferably 3% by mass or more and 20% by mass or less, and still more preferably 5% by mass or more and 15% by mass or less. When the component B is a combination of 2 or more, the content of the component B means the total content thereof.
The mass ratio (a/B) of the component a to the component B in the detergent composition of the present invention is preferably 0.05 or more, more preferably 0.08 or more, further preferably 0.1 or more, and further preferably 0.15 or more from the viewpoint of storage stability and reduction of load on drainage treatment, and is preferably 2 or less, more preferably 1 or less, further preferably 0.8 or less, and further preferably 0.5 or less from the viewpoint of improvement of resin mask removability. More specifically, the mass ratio (a/B) is preferably 0.05 or more and 2 or less, more preferably 0.08 or more and 1 or less, still more preferably 0.1 or more and 0.8 or less, and still more preferably 0.15 or more and 0.5 or less.
[ component C: water ]
The cleaning agent composition of the present invention contains water (component C). Examples of the water as the component C include ion-exchanged water, reverse osmosis water, distilled water, pure water, and ultrapure water.
The content of the component C in the cleaning agent composition of the present invention may be set to the balance excluding the components a, B and any components described later. Specifically, the content of the component C in the use of the cleaning agent composition of the present invention is 69.9% by mass or more, preferably 70% by mass or more, more preferably 75% by mass or more, and further preferably 80% by mass or more from the viewpoint of improving the resin mask removability, preferably 95% by mass or less, more preferably 90% by mass or less, and further preferably 85% by mass or less from the viewpoint of reducing the influence on a substrate containing an organic resin. More specifically, the content of the component C in use is 69.9 mass% or more and 99.4 mass% or less, preferably 70 mass% or more and 95 mass% or less, more preferably 75 mass% or more and 90 mass% or less, and further preferably 80 mass% or more and 85 mass% or less.
[ optional Components ]
The cleaning agent composition of the present invention may further contain any component in addition to the components a to C as required. As the optional components, components usable in general cleaning agents can be mentioned, and examples thereof include: organic solvents other than component B, surfactants, chelating agents, tackifiers, dispersants, rust inhibitors, high molecular compounds, cosolvents, antioxidants, preservatives, antifoaming agents, antibacterial agents, and the like. The content of any component in the use of the cleaning agent composition of the present invention is preferably 0% by mass or more and 2.0% by mass or less, more preferably 0% by mass or more and 1.5% by mass or less, still more preferably 0% by mass or more and 1.3% by mass or less, and still more preferably 0% by mass or more and 1.0% by mass or less.
The total content of the component a, the component B, and an organic substance derived from an arbitrary component in the use of the cleaning agent composition of the present invention is preferably 40% by mass or less, more preferably 35% by mass or less, further preferably 30% by mass or less, further preferably 25% by mass or less, and further preferably 20% by mass or less, from the viewpoint of reducing the load of wastewater treatment and reducing the influence on a substrate containing an organic resin, and is preferably 0.5% by mass or more, more preferably 1% by mass or more, further preferably 3% by mass or more, and further preferably 5% by mass or more from the viewpoint of improving the resin mask removability. More specifically, the total content of the component a, the component B, and an organic substance derived from an arbitrary component in the use of the detergent composition of the present invention is preferably 0.5 mass% or more and 40 mass% or less, more preferably 1 mass% or more and 35 mass% or less, further preferably 3 mass% or more and 30 mass% or less, further preferably 5 mass% or more and 25 mass% or less, and further preferably 5 mass% or more and 20 mass% or less.
From the viewpoint of reducing the load of wastewater treatment and suppressing eutrophication of wastewater water areas, the cleaning agent composition of the present invention is preferably substantially free of nitrogen-containing compounds and phosphorus-containing compounds. In the present invention, the phrase "substantially not containing a nitrogen-containing compound and a phosphorus-containing compound" means that the total content of the nitrogen-containing compound and the phosphorus-containing compound in the cleaning agent composition of the present invention is less than 0.1% by mass. The total content of the nitrogen-containing compound and the phosphorus-containing compound in the cleaning agent composition of the present invention is preferably 0.05% by mass or less, more preferably 0.01% by mass or less, and still more preferably 0% by mass, from the viewpoint of reducing the load of wastewater treatment and suppressing eutrophication of wastewater water areas.
Examples of the nitrogen-containing compound include nitrogen-containing compounds which have been widely used as cleaning agent compositions, and examples thereof include combinations of at least 1 or 2 or more selected from amines and salts thereof, ammonia, and ammonium salts. Examples of the amine include aminoalcohols such as monoethanolamine and diethanolamine. Examples of the ammonium salt include quaternary ammonium salts such as tetramethylammonium hydroxide (TMAH).
Examples of the phosphorus-containing compound include phosphorus-containing compounds which have been widely used as cleaning agent compositions, and examples thereof include inorganic phosphoric acids selected from phosphoric acids and salts thereof, condensed phosphoric acids such as pyrophosphoric acid, polyphosphoric acid, metaphosphoric acid, and salts thereof, and combinations of at least 1 or 2 or more of organic phosphoric acids and phosphoric esters.
[ method for producing detergent composition ]
The cleaning agent composition of the present invention can be produced by blending the above-mentioned components A to C and optionally the above-mentioned optional components by a known method. For example, the detergent composition of the present invention may be one prepared by blending at least the components A to C. Accordingly, the present invention relates to a method for producing a cleaning agent composition, which comprises a step of blending at least the components a to C. In the present invention, the term "blending" includes mixing the components A to C and other components as required simultaneously or in an arbitrary order. In the method for producing the detergent composition of the present invention, the preferred amounts of the respective components may be the same as the preferred amounts of the respective components of the detergent composition of the present invention.
The cleaning agent composition of the present invention may be a concentrate in which separation, precipitation, or the like occurs to reduce the amount of water in the component C within a range not impairing storage stability. The concentrate of the detergent composition is preferably a concentrate having a dilution ratio of 3 times or more from the viewpoint of transportation and storage, and is preferably a concentrate having a dilution ratio of 30 times or less from the viewpoint of storage stability. The concentrate of the detergent composition can be diluted with water so that the components a to C in use have the above contents (i.e., the contents in cleaning). Further, the concentrate of the cleaning agent composition may be used by adding each component separately at the time of use. In the present invention, "in use" or "in cleaning" of the concentrated detergent composition means a state in which a concentrate of the detergent composition is diluted.
[ subject to be cleaned ]
The cleaning agent composition of the present invention can be used for cleaning an object to be cleaned to which a resin mask is attached in one or more embodiments.
Examples of the object to be cleaned include an electronic component and an intermediate product for manufacturing the same. Examples of the electronic component include at least 1 component selected from metal plates such as a printed circuit board, a wafer, a copper plate, and an aluminum plate. The manufacturing intermediate is an intermediate product in a manufacturing process of an electronic component, and includes an intermediate product after a resin mask process. Specific examples of the object to be cleaned to which the resin mask is attached include electronic components formed on the surface of a substrate, such as wiring and connection terminals, through a process of soldering, plating (copper plating, aluminum plating, nickel plating, etc.), and the like using the resin mask.
Accordingly, the present invention, in one aspect, relates to the use of the detergent composition of the present invention as a detergent in the manufacture of electronic components.
The cleaning agent composition of the present invention can be preferably used for cleaning, in terms of cleaning effect, in one or more embodiments: the resin mask or the resin mask further subjected to plating treatment and/or heating treatment is adhered to the object to be cleaned. The resin mask may be, for example, a negative resin mask or a positive resin mask, and a negative resin mask is preferable in terms of easiness of exhibiting the effects of the present invention. As the negative resin mask, for example, a negative dry film resist subjected to exposure and/or development treatment is cited. In the present invention, the negative resin mask is formed using a negative resist, and examples thereof include a negative resist subjected to exposure and/or development treatment. In the present invention, the positive resin mask is formed using a positive resist, and examples thereof include a positive resist subjected to exposure and/or development treatment.
[ cleaning method ]
The present invention relates, in one aspect, to a cleaning method (hereinafter also referred to as "the cleaning method of the present invention") comprising: and a step of peeling the resin mask from the object to be cleaned, to which the resin mask is attached, by using the cleaning agent composition of the present invention. In one or more embodiments, the step of peeling the resin mask from the object to be cleaned in the cleaning method of the present invention includes contacting the object to be cleaned to which the resin mask is attached with the cleaning agent composition of the present invention. In the cleaning method of the present invention, the resin mask, particularly the resin mask subjected to the plating treatment and/or the heat treatment, can be removed with high efficiency.
Examples of the method for peeling a resin mask from an object to be cleaned by using the cleaning agent composition of the present invention or the method for bringing the cleaning agent composition of the present invention into contact with an object to be cleaned include: a method of immersing the substrate in a cleaning bath containing a cleaning agent composition to bring the substrate into contact with the cleaning agent composition, a method of spraying a cleaning agent composition to bring the substrate into contact with the cleaning agent composition (shower method), an ultrasonic cleaning method of irradiating ultrasonic waves during immersion, and the like. The cleaning agent composition of the invention can be directly used for cleaning without dilution. Examples of the object to be cleaned include the above-mentioned object to be cleaned.
In one or more embodiments, the cleaning method of the present invention may include a step of bringing the object to be cleaned into contact with the cleaning agent composition, then rinsing the object with water, and drying the object. In one or more embodiments, the cleaning method of the present invention may include a step of bringing the object to be cleaned into contact with the cleaning agent composition and then rinsing the object with water.
In the cleaning method of the present invention, it is preferable that ultrasonic waves are irradiated when the cleaning composition of the present invention is brought into contact with an object to be cleaned, and it is more preferable that the ultrasonic waves have a high frequency, from the viewpoint of facilitating the exertion of the cleaning power of the cleaning composition of the present invention. From the same viewpoint, the irradiation conditions of the ultrasonic waves are, for example, preferably 26 to 72kHz and 80 to 1500W, and more preferably 36 to 72kHz and 80 to 1500W.
In the cleaning method of the present invention, the temperature of the cleaning composition of the present invention is preferably 40 ℃ or higher, more preferably 50 ℃ or higher, from the viewpoint of easily exerting the cleaning power of the cleaning composition of the present invention, and is preferably 70 ℃ or lower, more preferably 60 ℃ or lower, from the viewpoint of reducing the influence on the substrate containing the organic resin.
[ method for producing electronic component ]
In one aspect, the present invention relates to a method for manufacturing an electronic component (hereinafter also referred to as "the method for manufacturing an electronic component of the present invention"), including: and a step of peeling the resin mask from the object to be cleaned, to which the resin mask is attached, by using the cleaning agent composition of the present invention. Examples of the object to be cleaned include the above-mentioned object to be cleaned. The method for producing an electronic component of the present invention can effectively remove a resin mask adhering to an electronic component by cleaning with the cleaning agent composition of the present invention, and thus can produce an electronic component with high reliability. Further, by performing the cleaning method of the present invention, the resin mask attached to the electronic component can be easily removed, and therefore, the cleaning time can be shortened, and the manufacturing efficiency of the electronic component can be improved.
[ set ]
The present invention relates, in one aspect, to a kit used in any one of the cleaning method of the present invention and the electronic component manufacturing method of the present invention (hereinafter, also referred to as "kit of the present invention"). Kits of the invention in one or more embodiments, are kits for making the cleanser compositions of the invention.
As the kit of the present invention, in one or more embodiments, there may be mentioned: a kit (two-liquid type cleanser composition) comprising a solution containing a component A (first liquid) and a solution containing a component B (second liquid) in a state of not being mixed with each other, wherein at least one of the first liquid and the second liquid further contains a part or the whole of a component C (water), and the first liquid and the second liquid are mixed at the time of use. After the first liquid and the second liquid are mixed, the mixture may be diluted with the component C (water) as needed. The first liquid and the second liquid may each optionally contain any of the above components. According to the kit of the present invention, a cleaning agent composition having excellent resin mask removability can be obtained.
In one or more other embodiments of the kit of the present invention, from the viewpoint of availability and workability, it is preferable to list: a kit comprising a first liquid containing 30 to 50 mass% of component A and containing component C as the remainder, and a second liquid composed only of component B; a kit comprising a first liquid containing 30 to 50 mass% of component A and containing component C as the remainder, and a second liquid containing 1 to 99 mass% of component B and containing component C as the remainder; or a kit comprising a first liquid containing 30 to 50 mass% of component A and containing component C as the remainder and a second liquid containing 1 to 99 mass% of component B and containing an arbitrary component and component C as the remainder. More preferably, the kit further comprises a third liquid containing component C, and the mixture of the first liquid and the second liquid is diluted to an arbitrary concentration by using the third liquid.
The invention also relates to one or more of the following embodiments.
< 1 > a cleaning agent composition for resin mask peeling comprising an alkaline agent (component A), an organic solvent (component B) and water (component C),
the coordinates of the hansen solubility parameter of component B are at a radius of 5.45MPa centered at d 18.3, p 6.8, h 3.70.5In the range of the ball of (a),
the content of component C in use is 69.9 to 99.4 mass%.
< 2 > the cleaning agent composition according to < 1 > wherein the component A is an inorganic base.
< 3 > the cleaning agent composition according to < 1 > or < 2 >, wherein the component A is at least 1 inorganic base selected from the group consisting of sodium hydroxide, potassium hydroxide, lithium hydroxide, calcium hydroxide, sodium carbonate, potassium carbonate, sodium silicate and potassium silicate.
< 4 > the cleaning agent composition according to < 1 >, wherein the component A is at least 1 organic base selected from the group consisting of a quaternary ammonium hydroxide represented by the following formula (I) and an amine represented by the following formula (II).
[ chemical formula 3]
In the above formula (I), R1、R2、R3And R4Each independently is at least 1 selected from the group consisting of methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl, and hydroxypropyl.
[ chemical formula 4]
In the above formula (II), R5Represents a hydrogen atom, a methyl group, an ethyl group or an aminoethyl group, R6Is at least 1 selected from a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group or an ethyl group, and R7Is at least 1 selected from aminoethyl, hydroxyethyl or hydroxypropyl, or, in formula (II), R5Is at least 1 selected from methyl, ethyl, aminoethyl, hydroxyethyl or hydroxypropyl, and R6And R7Bonded to each other and form a pyrrolidine ring or a piperazine ring together with the N atom in formula (II).
< 5 > the cleaning agent composition according to < 1 > or < 4 >, wherein component A is tetramethylammonium hydroxide.
< 6 > the cleaning agent composition according to any one of < 1 > to < 5 >, wherein the content of the component A in use is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, further preferably 1.0% by mass or more, and further preferably 1.5% by mass or more.
< 7 > the cleaning agent composition according to any one of < 1 > to < 6 >, wherein the content of the component A at the time of use is preferably 15% by mass or less, more preferably 10% by mass or less, further preferably 7.5% by mass or less, and further preferably 5% by mass or less.
< 8 > the cleaning agent composition according to any one of < 1 > to < 7 >, wherein the content of the component A in use is preferably 0.1% by mass or more and 15% by mass or less, more preferably 0.5% by mass or more and 10% by mass or less, further preferably 1.0% by mass or more and 7.5% by mass or less, and further preferably 1.5% by mass or more and 5% by mass or less.
< 9 > the detergent composition according to any one of < 1 > to < 8 >, wherein the coordinates of HSP of component B are set as (d)B、pB、hB) The coordinates (d) of HSP of component BB、pB、hB) Distance from component coordinate X (d 18.3, p 6.8, h 3.7) (unit: MPa of0.5) Satisfying the following equation.
Distance ═ d [ ([ d ]) ]B－18.3)2+(pB－6.8)2+(hB－3.7)2]0.5≤5.45MPa0.5
< 10 > the detergent composition according to any one of < 1 > to < 9 >, wherein the component B is at least 1 selected from acetophenone, propiophenone, p-anisaldehyde, o-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, diphenyl ether, anisole, phenetole, diethylene glycol diethyl ether, dipropylene glycol dimethyl ether, cyclohexanone, 2-octanone and benzaldehyde.
< 11 > the cleaning agent composition according to any one of < 1 > to < 10 >, wherein the content of the component B in use is preferably 0.5% by mass or more, more preferably 1% by mass or more, further preferably 3% by mass or more, and further preferably 5% by mass or more.
< 12 > the cleaning agent composition according to any one of < 1 > to < 11 >, wherein the content of the component B at the time of use is preferably 30% by mass or less, more preferably 25% by mass or less, further preferably 20% by mass or less, and further preferably 15% by mass or less.
< 13 > the cleaning agent composition according to any one of < 1 > to < 12 >, wherein the content of the component B at the time of use is preferably 0.5% by mass or more and 30% by mass or less, more preferably 1% by mass or more and 25% by mass or less, further preferably 3% by mass or more and 20% by mass or less, and further preferably 5% by mass or more and 15% by mass or less.
< 14 > the cleaning agent composition according to any one of < 1 > to < 13 >, wherein the content of the component A in use is 0.1 mass% or more and 15 mass% or less,
the content of component B in use is 0.5 to 30 mass%.
< 15 > the cleaning agent composition according to any one of < 1 > to < 14 >, wherein the mass ratio (A/B) of the component A to the component B is preferably 0.05 or more, more preferably 0.08 or more, further preferably 0.1 or more, and still further preferably 0.15 or more.
< 16 > the cleaning agent composition according to any one of < 1 > to < 15 >, wherein the mass ratio (A/B) of the component A to the component B is preferably 2 or less, more preferably 1 or less, further preferably 0.8 or less, and further preferably 0.5 or less.
< 17 > the cleaning agent composition according to any one of < 1 > to < 16 >, wherein the mass ratio (A/B) of the component A to the component B is preferably 0.05 or more and 2 or less, more preferably 0.08 or more and 1 or less, further preferably 0.1 or more and 0.8 or less, and further preferably 0.15 or more and 0.5 or less.
< 18 > the cleaning agent composition according to any one of < 1 > to < 17 >, wherein the content of the component C in use is 69.9% by mass or more, preferably 70% by mass or more, more preferably 75% by mass or more, and further preferably 80% by mass or more.
< 19 > the cleaning agent composition according to any one of < 1 > to < 18 >, wherein the content of the component C in use is 99.4% by mass or less, preferably 95% by mass or less, more preferably 90% by mass or less, and further preferably 85% by mass or less.
< 20 > the detergent composition according to any one of < 1 > to < 19 >, wherein the content of the component C in use is 69.9% by mass or more and 99.4% by mass or less, preferably 70% by mass or more and 95% by mass or less, more preferably 75% by mass or more and 90% by mass or less, and further preferably 80% by mass or more and 85% by mass or less.
< 21 > the detergent composition according to any one of < 1 > to < 20 >, wherein the total content of organic substances in the detergent composition is preferably 40% by mass or less, more preferably 35% by mass or less, still more preferably 30% by mass or less, yet still more preferably 25% by mass or less, and still more preferably 20% by mass or less.
< 22 > the detergent composition according to any one of < 1 > to < 21 >, wherein the total content of organic substances in the detergent composition is preferably 0.5% by mass or more, more preferably 1% by mass or more, further preferably 3% by mass or more, and further preferably 5% by mass or more.
< 23 > the detergent composition according to any one of < 1 > to < 22 >, wherein the total content of organic substances in the detergent composition when used is preferably 0.5% by mass or more and 40% by mass or less, more preferably 1% by mass or more and 35% by mass or less, still more preferably 3% by mass or more and 30% by mass or less, still more preferably 5% by mass or more and 25% by mass or less, and still more preferably 5% by mass or more and 20% by mass or less.
< 24 > the cleaning agent composition according to any one of < 1 > to < 23 > which is substantially free of nitrogen-containing compounds and phosphorus-containing compounds.
< 25 > the cleaning agent composition according to any one of < 1 > to < 24 >, wherein the total content of the nitrogen-containing compound and the phosphorus-containing compound in the cleaning agent composition is less than 0.1% by mass, preferably 0.05% by mass or less, more preferably 0.01% by mass or less, and still more preferably 0% by mass.
< 26 > the cleaning agent composition according to any one of < 1 > to < 25 >, wherein the resin mask is a negative type dry film resist which has been at least one of exposed and developed.
< 27 > a cleaning method comprising: and a step of peeling the resin mask from the object to be cleaned, to which the resin mask is attached, by using the cleaning agent composition described in any one of < 1 > to < 26 >.
< 28 > the cleaning method according to < 27 > wherein the object to be cleaned is a manufacturing intermediate of an electronic part.
< 29 > a method for manufacturing an electronic part, comprising: and a step of peeling the resin mask from the object to be cleaned, to which the resin mask is attached, by using the cleaning agent composition described in any one of < 1 > to < 26 >.
Use of the cleaning agent composition described in any one of < 30 > < 1 > to < 26 > as a cleaning agent in the production of electronic parts.
< 31 > a kit for use in any one of the cleaning method < 27 > or < 28 > and the electronic component manufacturing method < 29 >,
comprising a solution containing a component A (first liquid) and a solution containing a component B (second liquid) in a state of not being mixed with each other,
at least one of the first liquid and the second liquid further contains a part or the whole of the component C,
the first liquid and the second liquid are mixed at the time of use.
Examples
The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.
1. Physical properties (coordinates and distance of HSP) of organic solvent (component B, non-component B)
Coordinates (d) of HSP of organic solvent1、p1、h1) Using the software for personal computers "HSPiP: HansenSolubility Parameters in Practice ". Then, the coordinates (d) of HSP of the organic solvent were calculated by the following formula1、p1、h1) With the coordinates of the components (d ═ 18.3, p ═ 6.8, h ═3.7). The results are shown in Table 1.
Distance ═ d [ ([ d ]) ]1－18.3)2+(p1－6.8)2+(h1－3.7)2]0.5
[ Table 1]
2. Preparation of cleaning agent compositions of examples 1 to 22 and comparative examples 1 to 9
In a tall-type 200mL glass beaker, 2.5g of potassium hydroxide (component a), 15.0g of acetophenone (component B) and 82.5g of water (component C) were mixed in terms of the active ingredients, and the mixture was stirred and mixed to prepare the cleanser composition of example 1. Then, by the same method as in example 1, in the case of including components other than the components A to C, these were also blended at the same time, and the cleaning agent compositions of examples 2 to 22 and comparative examples 1 to 9 were prepared so as to have the composition ratios of the effective components shown in Table 2. The contents (mass% and effective components) of the components of each cleaning agent composition are shown in table 2.
The following components were used as the components of the cleaning agent compositions of examples 1 to 22 and comparative examples 1 to 9.
(component A)
A1: potassium hydroxide [ Special grade 48% by mass as a solid component manufactured by Kanto chemical Co., Ltd ]
A2: sodium hydroxide (Special grade 48% by mass solid content, manufactured by KANTO CHEMICAL Co.)
A3: tetramethylammonium hydroxide [ TMAH (25%) ] manufactured by Showa Denko K.K. ]
(component B)
B1: acetophenone (Special grade manufactured by Fuji film and Wako pure chemical industries, Ltd.)
B2: propiophenone (manufactured by Tokyo chemical industry Co., Ltd.)
B3: p-anisaldehyde [ Special grade manufactured by Fuji film and Wako pure chemical industries, Ltd ]
B4: o-anisaldehyde [ SIGMA-ALDRICH Co., Ltd ]
B5: p-methylacetophenone [ first class manufactured by Fuji film and Wako pure chemical industries ]
B6: tetrahydrofuran [ Fuji film and pure photo pharmaceutical, Special grade ]
B7: dimethoxy tetrahydrofuran [ manufactured by Tokyo chemical industry Co. ]
B8: methoxycyclopentane [ manufactured by Tokyo chemical industry Co. ]
B9: diphenyl ether (Special grade manufactured by Fuji film and Guangdong chemical Co.)
B10: anisole (Special grade manufactured by Fuji film and Wako pure chemical industries, Ltd.)
B11: phenetole [ Fuji film and Wako pure chemical industries, first-class ]
B12: diethylene glycol diethyl ether (Fuji film and Wako pure chemical industries, first order)
B13: dipropylene glycol dimethyl ether [ FUJIFILM Wako Chemical Corporation ]
B14: cyclohexanone (manufactured by Fuji film and Wako pure chemical industries, first class)
B15: 2-octanone [ Fuji film and Guangdong chemical, first class ]
B16: benzaldehyde [ Special grade manufactured by Fuji film and Wako pure chemical industries ]
(not component B)
B17: diethylene glycol monobutyl ether (Special grade manufactured by Fuji film and Wako pure chemical industries, Ltd.)
B18: diethylene glycol dimethyl ether (Special grade manufactured by Fuji film and Guangdong chemical Co.)
B19: butyl acetate (Fuji film and Guangdong chemical Co., Ltd., first class)
B20: diethylene glycol phenyl ether [ manufactured by Tokyo chemical industry Co., Ltd ]
B21: ethylene glycol (Fuji film and Guangdong chemical Co., Ltd., first class)
(component C)
Water: pure water of 1. mu.S/cm or less produced by a pure water apparatus G-10DSTSET manufactured by Organo Corporation
3. Evaluation of cleaning agent composition
The resin mask removability of the cleaning agent compositions of examples 1 to 22 and comparative examples 1 to 9 was evaluated.
[ production of sample of resin mask 1]
A photosensitive film for direct imaging (direct writing) (manufactured by hitachi chemical corporation, photo RD-1225, thickness 25 μm, negative dry film resist) was laminated on the surface of a glass epoxy multilayer substrate (manufactured by hitachi chemical corporation, MCL-E-679FG) under the following conditions, and after selectively performing exposure treatment and curing the exposed portion (exposure step), development treatment was performed, thereby removing the unexposed portion (development step), a substrate having a resist pattern (negative resin mask in a pattern shape) was obtained. Then, the area where the unexposed portion was removed by the above-mentioned development treatment was subjected to a copper plating treatment, thereby obtaining a sample (4cm × 4.5 cm).
(1) Laminating: the treatment was carried out at a roll temperature of 50 ℃ and a roll pressure of 1.4Bar for a treatment time of 30 seconds by using a cleaning roll (manufactured by RAYON Industrial Co., Ltd., RY-505Z) and a vacuum applicator (manufactured by Rohm and Haas Co., Ltd., VA7024/HP 5).
(2) Exposure: using a direct writing apparatus for a printed circuit board (Mercurex LI-9500 manufactured by SCREEN Graphic and precision solutions Co., Ltd.), exposure amount was 15mJ/cm2And (6) carrying out exposure.
(3) Pattern shape: stripe pattern of L/S20 μm/20 μm
(4) And (3) developing: the resin mask in the unexposed portion was removed by using a developing apparatus for a substrate (LT-980366, manufactured by Yangpokfield Co., Ltd.) and a 1% sodium carbonate aqueous solution at 30 ℃ under a spray pressure of 0.2MPa for 47 seconds.
[ production of sample of resin mask 2]
A photosensitive film (HP-1060, manufactured by hitachi chemical company, having a thickness of 60 μm, and a negative dry film resist) was laminated on the surface of the glass epoxy multilayer substrate under the following conditions, and after selectively performing an exposure treatment and curing the exposed portion (exposure step), a development treatment was performed to remove the unexposed portion (development step), and a substrate having a resist pattern (a negative resin mask having a pattern shape) was obtained. Then, the area where the unexposed portion was removed by the above-described development treatment was subjected to a copper plating treatment, thereby obtaining a sample (4cm × 4 cm).
(1) Laminating: this was carried out using a cleaning roller (manufactured by RAYON INDUSTRIAL Co., RY-505Z) and a vacuum applicator (manufactured by Rohm and Haas Co., Ltd., VA7024/HP 5).
(2) Exposure: the exposure was performed using a direct drawing apparatus (Mercurex LI-9500, manufactured by SCREEN Graphic and precision solutions Co., Ltd.) for a printed board.
(3) Pattern shape: stripe pattern of L/S20 μm/20 μm
(4) And (3) developing: the resin mask in the unexposed area was removed by using a developing apparatus for a substrate (LT-980366, manufactured by Yankee technology Co., Ltd.) and a 1% sodium carbonate aqueous solution.
[ cleaning test ]
100g of each detergent composition was added to a tall-type 200mL glass beaker, the beaker was heated to 60 ℃ and the sample was immersed for 4 minutes while being stirred at 600rpm using a rotor [ fluororesin (PTFE), 8 mm. times.25 mm ]. Then, the sample was immersed in a washing tank containing 100g of water in a 100mL glass beaker, washed, and then dried naturally.
[ evaluation of resin mask removability (peeling ratio (%) ]
The presence or absence of the resin mask remaining in each part of the sample after the cleaning test was visually confirmed at 300-fold magnification using an optical microscope "digital microscope VHX-2000" (manufactured by keyence corporation), and the peel rate (the ratio (%) of the area of the portion where the resin mask was removed assuming that the total area of the resin masks present before the cleaning test was 100) was calculated. The results are shown in Table 2.
[ Effect on the substrate ]
100g of each detergent composition was added to a 250mL jar made of polypropylene, a glass epoxy multilayer substrate (2 cm. times.5 cm) was immersed in the detergent composition, stored at 60 ℃ for 7 days, rinsed with water, and the state of the substrate surface after drying was visually observed, and the results of the evaluation according to the evaluation criteria described below are shown in Table 2.
A: no change from before the test
B: deterioration of substrate surface
[ Table 2]
As shown in Table 2, the cleaning agent compositions of examples 1 to 22 were found to have superior resin mask removability as compared with comparative examples 1 to 7 and 9 containing neither component A nor component B, and comparative example 8 containing component C in a content out of the predetermined range. In addition, the cleaning agent compositions of examples 1 to 22 having a content of the component C in the range of 69.9 to 99.4% by mass had a lower effect on the substrate containing an organic resin than that of comparative example 8 having a content of the component C of less than 69.9% by mass. Further, it is considered that the cleaning agent compositions of examples 1 to 22 had an organic matter content of 40 mass% or less and a small load on wastewater treatment.
Industrial applicability
According to the present invention, a cleaning agent composition for resin mask peeling having excellent resin mask removability can be provided. Thus, the cleaning agent composition of the present invention is useful as a cleaning agent composition used in a process for producing an electronic component, and can shorten a cleaning process for an electronic component to which a resin mask is attached, improve the performance and reliability of the produced electronic component, and improve the productivity of a semiconductor device.
Claims (11)
1. A cleaning agent composition for stripping a resin mask, which comprises a component A which is an alkaline agent, a component B which is an organic solvent, and a component C which is water,
the coordinates of the hansen solubility parameter of component B are at a radius of 5.45MPa centered at d 18.3, p 6.8, h 3.70.5In the range of the ball of (a),
the content of component C in use is 69.9 to 99.4 mass%.
2. The cleaning agent composition according to claim 1, wherein the content of the component A in use is 0.1 to 15% by mass,
the content of component B in use is 0.5 to 30 mass%.
3. The cleaning agent composition according to claim 1 or 2, wherein the component B is at least 1 selected from acetophenone, propiophenone, p-anisaldehyde, o-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, diphenyl ether, anisole, phenetole, diethylene glycol diethyl ether, dipropylene glycol dimethyl ether, cyclohexanone, 2-octanone and benzaldehyde.
4. The cleaning agent composition according to any one of claims 1 to 3, wherein the component A is an inorganic base.
5. The cleaning agent composition according to any one of claims 1 to 4, which is substantially free of a nitrogen-containing compound and a phosphorus-containing compound.
6. The cleaning agent composition according to any one of claims 1 to 5, wherein the resin mask is a negative type dry film resist subjected to at least one of exposure and development.
7. A method of cleaning, comprising: a process for peeling off a resin mask from an object to be cleaned to which the resin mask is adhered, by using the cleaning agent composition according to any one of claims 1 to 6.
8. The cleaning method according to claim 7, wherein the object to be cleaned is a manufacturing intermediate of an electronic component.
9. A method of manufacturing an electronic component, comprising: a process for peeling off a resin mask from an object to be cleaned to which the resin mask is adhered, by using the cleaning agent composition according to any one of claims 1 to 6.
10. Use of the detergent composition according to any one of claims 1 to 6 as a detergent for producing electronic parts.
11. A kit used in any one of the cleaning method according to claim 7 or 8 and the method for manufacturing an electronic component according to claim 9,
comprises a first liquid as a solution containing a component A and a second liquid as a solution containing a component B in an immiscible state,
at least one of the first liquid and the second liquid further contains a part or the whole of the component C,
the first liquid and the second liquid are mixed at the time of use.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2018/028330 WO2020021721A1 (en) | 2018-07-27 | 2018-07-27 | Detergent composition for resin mask removal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111566567A true CN111566567A (en) | 2020-08-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880084864.2A Pending CN111566567A (en) | 2018-07-27 | 2018-07-27 | Cleaning agent composition for resin mask stripping |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7132214B2 (en) |
| KR (1) | KR20210021576A (en) |
| CN (1) | CN111566567A (en) |
| TW (1) | TWI810335B (en) |
| WO (1) | WO2020021721A1 (en) |
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| CN101373343A (en) * | 2007-08-20 | 2009-02-25 | 株式会社东进世美肯 | Color photoresist stripping solution composition for thin film transistor liquid crystal display |
| CN101000468B (en) * | 2006-01-11 | 2011-06-08 | 株式会社东进世美肯 | Color resist stripping liquid composition for thin film transistor liquid crystal display |
| CN101041794B (en) * | 2006-03-24 | 2012-02-22 | 达兴材料股份有限公司 | Cleaning fluid composition and usage thereof |
| WO2018047631A1 (en) * | 2016-09-09 | 2018-03-15 | 花王株式会社 | Cleaning agent composition for resin mask detachment |
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| US5185235A (en) | 1987-09-09 | 1993-02-09 | Tokyo Ohka Kogyo Co., Ltd. | Remover solution for photoresist |
| JP4044215B2 (en) * | 1998-02-25 | 2008-02-06 | 花王株式会社 | Release agent composition |
| JP2000019745A (en) * | 1998-07-06 | 2000-01-21 | Kao Corp | Release agent composition |
| US9329486B2 (en) | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| JP2007254555A (en) * | 2006-03-22 | 2007-10-04 | Sanyo Chem Ind Ltd | Cleanser composition |
| WO2008039730A1 (en) | 2006-09-25 | 2008-04-03 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
| CN101201556A (en) | 2006-12-15 | 2008-06-18 | 安集微电子（上海）有限公司 | Photoresist detergent with low etching property |
-
2018
- 2018-07-27 WO PCT/JP2018/028330 patent/WO2020021721A1/en active Application Filing
- 2018-07-27 CN CN201880084864.2A patent/CN111566567A/en active Pending
- 2018-07-27 JP JP2019518336A patent/JP7132214B2/en active Active
- 2018-07-27 KR KR1020217002126A patent/KR20210021576A/en not_active Application Discontinuation
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2019
- 2019-07-23 TW TW108125973A patent/TWI810335B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101000468B (en) * | 2006-01-11 | 2011-06-08 | 株式会社东进世美肯 | Color resist stripping liquid composition for thin film transistor liquid crystal display |
| CN101041794B (en) * | 2006-03-24 | 2012-02-22 | 达兴材料股份有限公司 | Cleaning fluid composition and usage thereof |
| CN101373343A (en) * | 2007-08-20 | 2009-02-25 | 株式会社东进世美肯 | Color photoresist stripping solution composition for thin film transistor liquid crystal display |
| WO2018047631A1 (en) * | 2016-09-09 | 2018-03-15 | 花王株式会社 | Cleaning agent composition for resin mask detachment |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202016662A (en) | 2020-05-01 |
| JPWO2020021721A1 (en) | 2021-06-24 |
| JP7132214B2 (en) | 2022-09-06 |
| KR20210021576A (en) | 2021-02-26 |
| TWI810335B (en) | 2023-08-01 |
| WO2020021721A1 (en) | 2020-01-30 |
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