CN111564378A - Device and method for automatically powdering silicon wafer - Google Patents
Device and method for automatically powdering silicon wafer Download PDFInfo
- Publication number
- CN111564378A CN111564378A CN202010498102.6A CN202010498102A CN111564378A CN 111564378 A CN111564378 A CN 111564378A CN 202010498102 A CN202010498102 A CN 202010498102A CN 111564378 A CN111564378 A CN 111564378A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- glass paste
- powdering
- glass
- storage tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 125
- 239000010703 silicon Substances 0.000 title claims abstract description 125
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000000227 grinding Methods 0.000 title claims abstract description 39
- 239000011521 glass Substances 0.000 claims abstract description 114
- 239000000843 powder Substances 0.000 claims abstract description 59
- 238000003860 storage Methods 0.000 claims abstract description 30
- 238000007790 scraping Methods 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 26
- 238000000576 coating method Methods 0.000 claims abstract description 26
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 claims description 108
- 238000005245 sintering Methods 0.000 claims description 15
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000002604 ultrasonography Methods 0.000 claims description 6
- -1 polytetrafluoroethylene Polymers 0.000 claims description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 3
- 101100172874 Caenorhabditis elegans sec-3 gene Proteins 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000002161 passivation Methods 0.000 abstract description 9
- 239000007888 film coating Substances 0.000 abstract description 2
- 238000009501 film coating Methods 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000011068 loading method Methods 0.000 description 11
- 239000002253 acid Substances 0.000 description 6
- 238000009766 low-temperature sintering Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 238000011049 filling Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000001962 electrophoresis Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a device and a method for automatically powdering a silicon wafer. The device includes: the device comprises a transmission device, a powder scraping plate and a powder feeding device; the glass paste coating device comprises a glass paste coating device, a glass paste coating device and a powder coating device, wherein the glass paste coating device is used for coating the glass paste on a silicon wafer and comprises ultrasonic equipment and a storage tank, the storage tank is used for containing the glass paste, and the ultrasonic equipment is used for ultrasonically treating materials in the storage tank; the conveying equipment is used for conveying the silicon wafer, sending the silicon wafer into the glass paste of the storage tank, separating the powdered silicon wafer from the glass paste, and removing the redundant glass paste on the surface of the powdered silicon wafer through the powder scraping plate. The invention also provides an automatic powdering method completed by the automatic powdering device. The automatic powder feeding device and the method have the advantages of uniform glass film coating, better protection on a passivation area, high automation degree and high efficiency.
Description
Technical Field
The invention relates to a device and a method for automatically powdering a silicon wafer during preparation of a glass passivated diode, belonging to the technical field of preparation of glass passivated diodes.
Background
GPP is a generic term for glass-passivated devices, now referred to generally as glass-passivated diodes. The glass passivated diode is mainly obtained by using a monocrystalline silicon wafer as a raw material and performing the processing procedures of diffusion, photoetching, blade coating, cleaning, ditching, photoresist removing, powdering, passivation, sintering, point measurement, cutting, splitting and the like on the monocrystalline silicon wafer.
In the preparation process of the glass passivated diode, the powdering is an important step which directly influences the quality of the glass passivated diode. The existing silicon chip powdering method mainly comprises a scalpel method, an electrophoresis method and a photoresistance method.
The scalpel method comprises the steps of using a plastic rod to stick glass paste, scraping the glass paste into a groove through a blade, subsequently removing organic matters at low temperature, wiping a surface glass film, and then sintering at high temperature. The method has the advantages of uneven coating, easy scratching of the surface, labor-intensive operation mode and high labor intensity.
The electrophoresis method is characterized in that glass powder is uniformly mixed in acetone in an ultrasonic mode, the glass powder is irradiated by a lamp tube, the activity of charged particles of the glass powder is improved, the glass powder directionally moves towards exposed silicon under the action of an electric field, and then covers a groove, and the subsequent high-temperature sintering plays a role in passivation. The groove edge of the method has a boss, which affects the packaging and the subsequent required product process (the boss causes the damage of a photoetching plate), the process has higher requirements on the surface of a silicon wafer, the electrophoresis of a region which does not need electrophoresis is easy to occur, and the thickness of a glass film is not uniform.
The photoresist method is to mix and stir glass powder and photoresist uniformly, coat the mixture on the surface of a silicon wafer and in a groove uniformly in a spin coating mode, remove unnecessary glass film and photoresist in a photoetching exposure and developing mode, remove the photoresist in the residual glass film in a subsequent sintering mode, and realize the passivation of the glass film. However, the process of the method is complicated, and the photolithography process is not easy to control.
Disclosure of Invention
In view of the above problems in the prior art, the present invention aims to provide a method for automatically powdering a silicon wafer, which has the advantages of uniform glass film coating, good protection for a passivation region, and no scratch on the surface.
The invention also aims to provide an automatic powdering device for the automatic silicon wafer powdering method.
In order to achieve the above object, the present invention firstly provides an apparatus for automatically powdering a silicon wafer, comprising: the device comprises a transmission device, a powder scraping plate and a powder feeding device; wherein the content of the first and second substances,
the glass paste coating device comprises a glass paste coating device, a powder coating device and a control device, wherein the glass paste coating device is used for coating the glass paste on a silicon wafer, the powder coating device comprises ultrasonic equipment and a storage tank, the storage tank is used for containing the glass paste, and the ultrasonic equipment is used for ultrasonically treating materials in the storage tank;
the conveying equipment is used for conveying the silicon wafer, sending the silicon wafer into the glass paste of the storage tank, separating the powdered silicon wafer from the glass paste, and removing the redundant glass paste on the surface of the powdered silicon wafer through the powder scraping plate.
In a specific embodiment of the invention, the transmission device comprises two rotating wheels and a conveyor belt, and the rotating wheels drive the conveyor belt to transmit; the conveyor belt is used for conveying the silicon wafers. Wherein the conveying belt is made of polytetrafluoroethylene; the silicon chip is fixed on the conveyer belt in a vacuum adsorption or mechanical clamping mode.
In one embodiment of the invention, the ultrasonic equipment is mainly used for removing bubbles in the silicon wafer grooves and filling uniform glass paste into the grooves of the silicon wafer. In particular, the reservoir may be arranged inside the ultrasound device. Wherein, the storage tank can be a quartz cylinder. The reservoir is arranged between the two rotating wheels. At least two pulleys are arranged in the storage tank and used for enabling the conveying belt to pass through the glass paste.
In a specific embodiment of the invention, the powder scraping plate is arranged between the rotating wheel and the storage tank, and the length of the powder scraping plate is 12cm-15cm, the width of the powder scraping plate is 1cm-2cm, and the height of the powder scraping plate is 1.5cm-3 cm; wherein, the powder scraping plate can be an elastic plastic plate; the device can also comprise a bracket for loading the powder scraping plate; wherein, the bracket can be a stainless steel bracket.
In one embodiment of the invention, the glass paste is composed of glass powder and butyl carbitol in a mass ratio of 1-3: 1.
The invention also provides a method for automatically powdering the silicon wafer by using the device for automatically powdering the silicon wafer. The method comprises the following steps:
the silicon chip is conveyed into a storage tank filled with glass paste through a conveyor belt, so that the running distance of the silicon chip in the glass paste is 8cm-12cm, bubbles in a silicon chip groove are effectively removed through ultrasound, and the glass paste is uniformly filled into the silicon chip groove; the running speed of the conveyor belt is 1mm/sec-3 mm/sec; the ultrasonic power is 20MHz-80MHz, and the current is 0.5A-3A;
loading a silicon wafer through a conveyor belt, and removing redundant glass paste on the surface of the silicon wafer through a powder scraping plate;
carrying out low-temperature treatment on the silicon wafer to remove organic matters (butyl carbitol) in the glass paste;
and then, carrying out high-temperature sintering molding to finish the automatic powdering of the silicon wafer.
In one embodiment of the invention, the speed of the silicon wafer passing through the doctor blade is the same as the speed of the silicon wafer passing through the reservoir. Specifically, the silicon wafer is directly taken down from the conveying belt after passing through the powder scraping plate, and the subsequent steps are carried out.
In one embodiment of the invention, the time of the low-temperature treatment is 10min to 40 min; the temperature of the low-temperature treatment is 400-500 ℃.
In a specific embodiment of the invention, the time of high-temperature sintering is 8min-30min, and the temperature of high-temperature sintering is 650 ℃ -900 ℃.
In one embodiment of the invention, the glass paste on the surface of the silicon wafer is removed by wiping with plastic fibers before high-temperature sintering.
The invention also provides a glass passivated diode (GPP) which comprises the steps of the method for automatically powdering the silicon chip of the invention when being prepared.
The device and the method for automatically powdering the silicon wafer are particularly suitable for powdering the silicon wafer with a single-side groove.
The device and the method for automatically powdering the silicon wafer have the advantages that the glass film is uniformly coated, and the passivation area is well protected; the requirement on the surface of the silicon wafer is low, and the surface is not easy to scratch; the automation degree is high, and the efficiency is high.
The automatic powdering method for the silicon wafer is simple in process and high in operability.
Drawings
Fig. 1 is a schematic structural diagram of an apparatus for automatically powdering a silicon wafer according to embodiment 1 of the present invention.
FIG. 2a is a schematic diagram of a silicon wafer after powdering in example 1 of the present invention.
FIG. 2b is a schematic diagram of a silicon wafer after powdering in example 1 of the present invention.
Description of the main figures:
1. a conveyor belt; 2. a storage tank; 3. an ultrasonic device; 4. a rotating wheel; 5. a powder scraping plate; 6. a pulley; A. and B represents a moving path of the silicon wafer.
Detailed Description
The technical solutions of the present invention will be described in detail below in order to clearly understand the technical features, objects, and advantages of the present invention, but the present invention is not limited to the practical scope of the present invention.
Example 1
The embodiment provides an automatic silicon wafer powdering device, which has the structure shown in fig. 1 and comprises: a transmission device, a powder scraping plate 5 and a powder feeding device.
The glass paste coating device comprises a glass paste coating device, a powder coating device and an ultrasonic device, wherein the powder coating device is used for coating the glass paste on a silicon wafer, the powder coating device comprises the ultrasonic device 3 and a storage tank 2, the storage tank 2 is used for containing the glass paste, the ultrasonic device 3 is used for ultrasonically treating materials in the storage tank, removing bubbles in a silicon wafer groove, and filling the uniform glass paste into the silicon wafer groove. The reservoir 2 may be arranged inside the ultrasound device 3, the reservoir 2 being arranged between two turning wheels 4. Two pulleys 6 are arranged in the storage tank 2, and the pulleys 6 are used for enabling the conveyor belt 1 to pass through the glass paste. The tank 2 may be a quartz cylinder.
The conveying equipment is used for conveying the silicon wafer, sending the silicon wafer into the glass paste of the storage tank 2, separating the powdered silicon wafer from the glass paste, and removing the redundant glass paste on the surface of the powdered silicon wafer through the powder scraping plate 5.
The transmission equipment comprises two rotating wheels 4 and a conveyor belt 1, and the rotating wheels 4 drive the conveyor belt 1 to move; the conveyor belt 1 is used to convey silicon wafers. Wherein the conveyor belt 1 is a belt made of polytetrafluoroethylene; the silicon chip is fixed on the conveyor belt 1 in a vacuum adsorption or mechanical clamping mode.
The powder scraping plate 5 is arranged between the rotating wheel 4 and the storage tank 2 and is fixed through a support, and the support can be a stainless steel support. The length of the powder scraping plate 5 is 12cm-15cm, the width is 1cm-2cm, and the height is 1.5cm-3 cm; wherein, the powder scraping plate 5 can be an elastic plastic plate.
The embodiment also provides a method for automatically powdering a silicon wafer by using the device, which specifically comprises the following steps:
protecting the region which does not need to be grooved by a photoetching mode;
the PN junction of the silicon chip is dug off by an acid etching mode to form a clean PN junction section, and the acid solution is HF and HNO3＝1：1.5；
Loading a silicon wafer onto a device shown in figure 1, wherein an angle of 15 degrees is required between a groove generated by corrosion and a belt running track, conveying the silicon wafer into a storage tank filled with glass paste through a conveyor belt, moving the silicon wafer to a position A shown in figure 1, wherein the glass paste comprises glass powder and butyl carbitol with the mass ratio of 1:1, enabling the running distance of the silicon wafer in the glass paste to be 8cm at the speed of 1mm/sec, removing bubbles in a silicon wafer groove through ultrasound, and uniformly filling the glass paste into the silicon wafer groove, so that the corroded groove is filled with the glass paste, the ultrasonic power is 20MHz, and the current is 0.5A;
after the silicon wafer runs out of the storage tank through the conveyor belt, the glass paste on the surface of the silicon wafer is wiped off through the powder scraping plate (the powder scraping plate and the silicon wafer groove form an angle of 15 degrees to avoid the influence of a glass film in the groove), the silicon wafer is moved to a position B shown in figure 1, and then the silicon wafer is taken out; (in the actual process, a plurality of silicon chips continuously reciprocate);
loading the taken silicon wafer to a quartz boat, putting the quartz boat in a furnace tube for low-temperature sintering at the sintering temperature of 400 ℃ for 10min to remove the organic solvent and perform coarse curing on the glass film;
further erasing part of the glass paste remained on the surface of the silicon wafer by using an eraser (reserving glass powder in the groove);
loading the silicon wafer subjected to powder wiping to a quartz boat, feeding the quartz boat into a furnace tube for low-temperature sintering, wherein the sintering condition is 650 ℃ and 8min, and finally shaping the glass paste through the softening temperature and the flowing temperature of the glass powder to realize passivation protection of the PN junction; and finishing the automatic powdering of the silicon wafer.
Through the automatic powder feeding device, the labor intensity of workers can be reduced, and the production efficiency is improved; the silicon wafer after powdering is shown in fig. 2a and 2 b. As can be seen from fig. 2a and 2b, the automatic powdering device avoids abnormal silicon wafer surface scratch caused by non-uniform manual force in the worker powdering process, and improves the consistency of glass paste in the groove and the repeatability between silicon wafers.
Example 2
The embodiment provides an automatic powdering method implemented by using the apparatus shown in fig. 1, which specifically includes:
protecting the region which does not need to be grooved by a photoetching mode;
the PN junction of the silicon chip is dug off by an acid etching mode to form a clean PN junction section, and the acid solution is HF and HNO3＝1：3；
Loading a silicon wafer onto the device shown in FIG. 1, wherein an angle of 75 degrees is required between a groove generated by corrosion and a belt running track, sending the silicon wafer into a storage tank filled with glass paste (the glass paste comprises glass powder and butyl carbitol with the mass ratio of 3: 1) through a conveyor belt, enabling the running distance of the silicon wafer in the glass paste to be 12cm at the speed of 3mm/sec, removing bubbles in the groove of the silicon wafer through ultrasound, and uniformly filling the glass paste into the groove of the silicon wafer, thereby realizing that the corroded groove is filled with the glass paste, wherein the ultrasonic power is 80MHz, and the current is 3A;
after the silicon wafer runs out of the storage tank through the conveyor belt, the glass paste on the surface of the silicon wafer is wiped off through the powder scraping plate (the powder scraping plate and a silicon wafer groove form an angle of 75 degrees to avoid the influence of a glass film in the groove), and then the silicon wafer is taken out; (in the actual process, a plurality of silicon chips continuously reciprocate);
loading the taken silicon wafer to a quartz boat, putting the quartz boat in a furnace tube for low-temperature sintering at the sintering temperature of 500 ℃ for 40min to remove the organic solvent and perform coarse curing on the glass film;
further erasing part of the glass paste remained on the surface of the silicon wafer by using an eraser (reserving glass powder in the groove);
loading the silicon wafer subjected to powder wiping to a quartz boat, feeding the quartz boat into a furnace tube for low-temperature sintering at 900 ℃ for 30min, and finally shaping the glass paste through the softening temperature and the flowing temperature of the glass powder to realize passivation protection of the PN junction; and finishing the automatic powdering of the silicon wafer.
Example 3
The embodiment provides an automatic powdering method implemented by using the apparatus shown in fig. 1, which specifically includes:
protecting the region which does not need to be grooved by a photoetching mode;
the PN junction of the silicon chip is dug off by an acid etching mode to form a clean PN junction section, and the acid solution is HF and HNO3＝1：3；
Loading a silicon wafer onto the device shown in FIG. 1, wherein a groove generated by corrosion is required to form an angle of 45 degrees with a belt moving track, conveying the silicon wafer into a storage tank filled with glass paste (the glass paste comprises glass powder and butyl carbitol with the mass ratio of 3:1, enabling the moving distance of the silicon wafer in the glass paste to be 12cm at the speed of 2mm/sec, removing bubbles in the groove of the silicon wafer by ultrasonic, and uniformly filling the glass paste into the groove of the silicon wafer, so that the etched groove is filled with the glass paste, wherein the ultrasonic power is 60MHz, and the current is 3A;
after the silicon wafer runs out of the storage tank through the conveyor belt, the glass paste on the surface of the silicon wafer is wiped off through the powder scraping plate (the powder scraping plate and a silicon wafer groove form an angle of 55 degrees to avoid the influence of a glass film in the groove), and then the silicon wafer is taken out; (in the actual process, a plurality of silicon chips continuously reciprocate);
loading the taken silicon wafer to a quartz boat, putting the quartz boat in a furnace tube for low-temperature sintering at the sintering temperature of 500 ℃ for 40min to remove the organic solvent and perform coarse curing on the glass film;
further erasing part of the glass paste remained on the surface of the silicon wafer by using an eraser (reserving glass powder in the groove);
loading the silicon wafer subjected to powder wiping to a quartz boat, feeding the quartz boat into a furnace tube for low-temperature sintering at 900 ℃ for 30min, and finally shaping the glass paste through the softening temperature and the flowing temperature of the glass powder to realize passivation protection of the PN junction; and finishing the automatic powdering of the silicon wafer.
Claims (10)
1. An apparatus for automatically powdering a silicon wafer, the apparatus comprising: the device comprises a transmission device, a powder scraping plate and a powder feeding device; wherein the content of the first and second substances,
the glass paste coating device comprises a glass paste coating device, a powder coating device and a control device, wherein the glass paste coating device is used for coating the glass paste on a silicon wafer, the powder coating device comprises ultrasonic equipment and a storage tank, the storage tank is used for containing the glass paste, and the ultrasonic equipment is used for ultrasonically treating materials in the storage tank;
the conveying equipment is used for conveying the silicon wafer, sending the silicon wafer into the glass paste of the storage tank, separating the powdered silicon wafer from the glass paste, and removing the redundant glass paste on the surface of the powdered silicon wafer through the powder scraping plate.
2. The apparatus of claim 1, wherein the transport device comprises two rotating wheels and a conveyor belt, the rotating wheels driving the conveyor belt; the conveyor belt is used for conveying the silicon wafers.
3. The apparatus of claim 2, wherein the reservoir is disposed between two rotating wheels;
preferably, pulleys are provided in the reservoir for passing the conveyor through the glass paste.
4. The apparatus of claim 2, wherein the conveyor belt is a belt made of polytetrafluoroethylene.
5. The apparatus of claim 1, wherein the doctor blade has a length of 12cm to 15cm, a width of 1cm to 2cm, and a height of 1.5cm to 3 cm.
6. A method for automatically powdering a silicon wafer, which is carried out by the apparatus for automatically powdering a silicon wafer according to any one of claims 1 to 5.
7. The method of claim 6, wherein the method comprises:
conveying the silicon wafer into a storage tank filled with glass paste through a conveyor belt, enabling the running distance of the silicon wafer in the glass paste to be 8-12 cm, removing bubbles in a silicon wafer groove through ultrasound, and enabling the glass paste to be uniformly filled into the silicon wafer groove; the running speed of the conveyor belt is 1mm/sec-3 mm/sec; the ultrasonic power is 20-80MHz, and the current is 0.5-3A;
enabling the silicon wafer to pass through a powder scraping plate through a conveying belt, and removing redundant glass paste on the surface of the silicon wafer;
carrying out low-temperature treatment on the silicon wafer to remove organic matters in the glass paste;
and (4) performing high-temperature sintering molding to finish the automatic powdering of the silicon wafer.
8. The method according to claim 7, wherein the time of the low-temperature treatment is 10min to 40 min; the temperature of low-temperature treatment is 400-500 ℃;
preferably, the high-temperature sintering time is 8min-30min, and the high-temperature sintering temperature is 650-900 ℃.
9. The method according to claim 7, wherein the glass paste is composed of glass frit and butyl carbitol in a mass ratio of 1-3: 1.
10. A glass passivated diode comprising the steps of the method of self-powdering the silicon wafer of any one of claims 6-9 when fabricated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010498102.6A CN111564378A (en) | 2020-06-04 | 2020-06-04 | Device and method for automatically powdering silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010498102.6A CN111564378A (en) | 2020-06-04 | 2020-06-04 | Device and method for automatically powdering silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111564378A true CN111564378A (en) | 2020-08-21 |
Family
ID=72070137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010498102.6A Pending CN111564378A (en) | 2020-06-04 | 2020-06-04 | Device and method for automatically powdering silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111564378A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113299567A (en) * | 2021-05-24 | 2021-08-24 | 捷捷半导体有限公司 | Passivation layer manufacturing method |
-
2020
- 2020-06-04 CN CN202010498102.6A patent/CN111564378A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113299567A (en) * | 2021-05-24 | 2021-08-24 | 捷捷半导体有限公司 | Passivation layer manufacturing method |
| CN113299567B (en) * | 2021-05-24 | 2024-02-02 | 捷捷半导体有限公司 | Passivation layer manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR960013142B1 (en) | Method of removing undesired particles from a surface of a substrate | |
| TWI758505B (en) | Wafer generation device | |
| US20020004358A1 (en) | Cluster tool systems and methods to eliminate wafer waviness during grinding | |
| US20110139759A1 (en) | Fiber-optic beam delivery system for wafer edge processing | |
| CN111564378A (en) | Device and method for automatically powdering silicon wafer | |
| CN1515025A (en) | Method for dividing semiconductor wafer | |
| CN112967993A (en) | Wafer bonding-releasing method | |
| CN105702563A (en) | A novel wafer thinning method | |
| CN102723302B (en) | Fully-automatic loading and unloading device used in processing semiconductor chips by laser and application method thereof | |
| CN212010901U (en) | Automatic powder feeding device for silicon wafers | |
| CN103021809A (en) | Drop type method for removing silicon dioxide on edge of silicon wafer | |
| CN105826172A (en) | Passivation protection method capable of increasing reliability and yield rate of semiconductor chip | |
| CN109093867A (en) | Solar energy single crystal silicon rod graph thinning cutting method | |
| CN102496591B (en) | The cleaning device of wafer and cleaning method | |
| CN1407378A (en) | Liquid treating device and method | |
| JP2018056178A (en) | Method for manufacturing element chip | |
| CN107230653B (en) | Substrate processing apparatus, substrate processing method, and storage medium | |
| JP5930901B2 (en) | Epoxy resin processing method | |
| JP7126468B2 (en) | Substrate processing method and substrate processing apparatus | |
| JPH07201786A (en) | Method and apparatus for grinding compound semiconductor wafer | |
| CN104277944A (en) | TFT (thin film transistor) liquid crystal glass substrate cleaning fluid and cleaning method thereof | |
| JP2003504843A (en) | Method for confirming pre-processing adjustment of wafer cleaning system | |
| JP2006278701A (en) | Manufacturing method for semiconductor wafer | |
| CN114695643A (en) | Reworking method for poor back of lithium niobate single-side polished wafer | |
| CN212134874U (en) | Device for passivating silicon wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |