CN212134874U - Device for passivating silicon wafer - Google Patents
Device for passivating silicon wafer Download PDFInfo
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- CN212134874U CN212134874U CN202022465491.0U CN202022465491U CN212134874U CN 212134874 U CN212134874 U CN 212134874U CN 202022465491 U CN202022465491 U CN 202022465491U CN 212134874 U CN212134874 U CN 212134874U
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Abstract
The utility model discloses a device for passivating silicon wafers, which comprises a double-roller mechanism and a sealing mechanism; wherein, two rolling wheel mechanisms utilize the twin roller of setting for the interval to be equipped with the silicon chip sample that awaits measuring and pour into two faces of the plastic envelope of passivation liquid simultaneously and roll and grind, sealing mechanism follows the silicon chip sample that awaits measuring in the plastic envelope of the shape of the silicon chip sample that awaits measuring is sealed the silicon chip sample that awaits measuring in rolling and grinding.
Description
Technical Field
The utility model relates to a semiconductor production technical field especially relates to an equipment for silicon chip passivation.
Background
Minority Carrier Lifetime (Minority Carrier Lifetime), also referred to as Minority Carrier Lifetime for short, refers to the average survival time of Minority carriers in a silicon wafer, is an important parameter of semiconductor materials and devices, and directly reflects the conditions of surface defects, surface metal contamination and the like of the silicon wafer in the manufacturing process, so that obtaining an accurate Minority Carrier Lifetime value has important significance for manufacturing semiconductor devices.
Currently, Microwave photoconductive Decay method (mu-PCD, Microwave Photo-conductor Decay) is widely applied to measure the minority carrier lifetime of silicon wafers. In brief, the microwave photoconductive decay method is to irradiate the surface of a silicon wafer by using pulse laser with the band gap larger than that of silicon, the generated hole-electron can increase the photoconductivity of the silicon wafer, the photoconductivity shows exponential decay along with the removal of the laser, and the change of the photoconductivity is detected by using the change of the reflection intensity of the microwave, so that the service life of minority carriers is obtained. However, the minority carrier lifetime obtained by measurement is not the real minority carrier lifetime of the silicon wafer because the dangling bonds existing on the surface of the silicon wafer can become effective recombination centers. That is, the data measured by the μ -PCD method is formed by the combined influence of the actual minority carrier lifetime of the silicon wafer and the surface recombination; specifically, under a certain condition of the sample, the larger the recombination rate of the sample surface is, the larger the deviation between the measured minority carrier lifetime value and the actual minority carrier lifetime value of the silicon wafer is. In order to reduce the influence of surface recombination on the measurement result, so that the minority carrier lifetime of the silicon wafer can be measured more accurately, the surface of the silicon wafer is generally required to be subjected to chemical passivation treatment before measurement. Briefly, the chemical passivation treatment is expected to saturate dangling bonds on the surface of the silicon wafer by using H or halogen elements, and reduce the deviation between data measured by a mu-PCD method and the actual minority carrier lifetime value of the silicon wafer in a mode of reducing the recombination rate of the surface of the silicon wafer.
At present, in the chemical passivation process, a solution film is usually formed on the surface of a silicon wafer by coating or spreading a passivation solution containing H or halogen elements, so as to achieve the purpose of passivation. However, if the thickness of the solution film varies greatly due to uneven coating or spreading, the recombination rate on the surface of the silicon wafer varies, and the measured value of minority carrier lifetime deviates. Based on the above, in the chemical passivation treatment stage before the minority carrier lifetime of the silicon wafer is measured by using the mu-PCD method, the passivation solution needs to be uniformly coated or coated on the surface of the silicon wafer to be measured.
SUMMERY OF THE UTILITY MODEL
In view of this, the embodiment of the present invention is expected to provide an apparatus for silicon wafer passivation, which can uniformly paint or coat a passivation solution on the surface of a silicon wafer to be tested, and is expected to improve the accuracy of the minority carrier lifetime measurement value by reducing the deviation of the measurement value of the minority carrier lifetime generated by the large difference in the thickness of the solution film.
The technical scheme of the utility model is realized like this:
the embodiment of the utility model provides a device for passivating silicon wafers, which comprises a double-roller mechanism and a sealing mechanism; wherein, two rolling wheel mechanisms utilize the twin roller of setting for the interval to be equipped with the silicon chip sample that awaits measuring and pour into two faces of the plastic envelope of passivation liquid simultaneously and roll and grind, sealing mechanism follows the silicon chip sample that awaits measuring in the plastic envelope of the shape of the silicon chip sample that awaits measuring is sealed the silicon chip sample that awaits measuring in rolling and grinding.
In the above aspect, the double roller mechanism includes: the device comprises a first conveyor belt, a second conveyor belt and a pair of rolling rollers which are fixed at a set interval along the vertical direction and have opposite rolling directions; the first conveyor belt is used for conveying the plastic package bag filled with the silicon wafer sample to be tested and injected with the passivation solution to the rolling roller pair for rolling; the second conveyor belt is used for conveying the plastic packaging bags subjected to rolling grinding to the sealing mechanism; the rolling direction of a lower roller positioned below the rolling roller pair is the same as the conveying direction of the first conveyor belt, and the rolling direction of an upper roller positioned above the rolling roller pair is opposite to the rolling direction of the lower roller, so that the rolling direction of the rolling roller pair is consistent with the conveying direction of the first conveyor belt and the conveying direction of the second conveyor belt; and the rolling roller pair rolls the plastic package bag filled with the silicon wafer sample to be tested and injected with the passivation solution in sequence from the bag bottom to the bag opening.
In the above scheme, the double-roller mechanism further comprises a fixing base arranged oppositely, the rolling roller pairs are arranged on the fixing base in the vertical direction, and each rolling roller can be horizontally fixed.
In the above scheme, the fixed base outside is provided with the guide rail of vertical direction, the last roll gyro wheel of roll gyro wheel centering is fixed in through adjusting screw on the fixed base, through adjusting the adjusting screw is in the position height in the guide rail, so that the interval T between the roll gyro wheel pair changes at the within range of setting for.
In the scheme, the guide rail is further provided with scales for marking the height so as to clearly indicate the distance between the rolling roller pairs.
In the scheme, the distance between the rolling roller pairs is the sum of the thickness of the silicon wafer sample to be tested, the thickness of the plastic package bag and the thickness of the passivation solution film.
In the above scheme, the equipment further comprises a passivation solution recovery platform arranged at the first conveying belt, wherein the passivation solution recovery platform is used for recovering passivation solution flowing out of the bag opening of the plastic package bag in the rolling process and passivating subsequent silicon wafer samples to be tested.
In the above scheme, the sealing mechanism includes a sealer having a hot wire, and can seal according to the shape of the silicon wafer sample to be tested contained in the plastic packaging bag to form a sealing line, so as to maintain the passivation solution film coated on the surface of the silicon wafer sample to be tested and having a uniform thickness.
In the above aspect, the passivation solution includes an iodine-Methanol solution prepared by mixing iodine and Methanol at a predetermined ratio, and a solution prepared by mixing a halogen element having a strong oxidizing power and Ethanol (Ethanol) or Methanol (Methanol) at a predetermined ratio.
In the above scheme, the plastic package bag comprises a transparent polyethylene bag or a transparent polypropylene bag.
The embodiment of the utility model provides a device for passivating silicon wafers, which comprises a double-roller mechanism and a sealing mechanism; when a silicon wafer sample to be tested is filled into the plastic package bag and the passivation solution is injected into the plastic package bag, the double-roller mechanism simultaneously rolls and rolls two surfaces of the plastic package bag through the double rollers, so that residual bubbles in the plastic package bag can be removed, the passivation solution can be uniformly coated on the surface of the silicon wafer sample to be tested to form a uniform passivation solution film, and thus, when the rolled plastic package bag is sealed by the sealing mechanism, the minority carrier lifetime deviation generated by the large thickness difference of the passivation solution film can be reduced and the accuracy of the minority carrier lifetime measurement value can be improved in the process of measuring the minority carrier lifetime in the silicon wafer sample to be tested by utilizing a mu-PCD method.
Drawings
Fig. 1 is a schematic view of an apparatus for passivating a silicon wafer according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of the silicon wafer sample to be tested being packed into the plastic bag provided by the embodiment of the utility model.
Fig. 3 is a schematic view of the passivation solution injected into the plastic bag according to the embodiment of the present invention.
Fig. 4 is a schematic composition diagram of a dual roller mechanism according to an embodiment of the present invention.
Fig. 5 is a schematic diagram of the embodiment of the present invention, which is used for rolling the plastic package bag filled with the silicon wafer sample to be tested and the passivation solution.
Fig. 6 is a schematic structural diagram of a double-roller mechanism according to an embodiment of the present invention.
Fig. 7 is a schematic structural diagram of another dual-roller mechanism according to an embodiment of the present invention.
Fig. 8 is a schematic structural diagram of another dual-roller mechanism according to an embodiment of the present invention.
Fig. 9 is a schematic view of sealing a sealing bag according to an embodiment of the present invention.
Detailed Description
In order to illustrate embodiments of the present invention or technical solutions in the prior art more clearly, the following description will be made in conjunction with the accompanying drawings in embodiments of the present invention to describe the technical solutions in the embodiments of the present invention clearly and completely, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
In order to uniformly coat or coat the passivation solution on the surface of the silicon wafer to be tested in the chemical passivation treatment stage before the minority carrier lifetime of the silicon wafer is measured by using the mu-PCD method, refer to FIG. 1, which shows an apparatus 1 for passivating the silicon wafer according to an embodiment of the present invention, wherein the apparatus 1 may include a double roller mechanism 11 and a sealing mechanism 12; wherein, two rolling wheel mechanisms 11 utilize the twin roller of setting for the interval to be equipped with the silicon chip sample that awaits measuring and pour into two faces of the plastic envelope of passivation liquid simultaneously and roll, and sealing mechanism 12 is in accordance with the silicon chip sample that awaits measuring in the plastic envelope through rolling the shape of silicon chip sample seals.
It should be noted that, after a silicon wafer sample to be measured is loaded into the plastic package bag and passivation solution is injected into the plastic package bag, the double-roller mechanism 11 rolls and rolls two surfaces of the plastic package bag through the double rollers simultaneously, which not only can remove residual bubbles in the plastic package bag, but also can enable the passivation solution to be uniformly coated on the surface of the silicon wafer sample to be measured to form a uniform passivation solution film.
For the technical solution shown in fig. 1, in some possible implementations, a certain number of pretreatment processes are required before the silicon wafer sample to be tested is loaded into the plastic package. Specifically, after the single crystal silicon is cut into silicon wafers, Bright etched surfaces (Bright etched surfaces) can be formed on the cut silicon wafers by using a Mixed Acid etching solution (MAE), so that the silicon wafers with Bright etched surfaces are formed; and then, removing the natural oxide film formed on the surface of the silicon wafer by using a hydrofluoric acid aqueous solution, and obtaining the silicon wafer sample to be tested which can be filled into the plastic packaging bag after the natural oxide film is removed. In some examples, the mixed acid etching solution may be selected from nitric acid (HNO)3) Hydrofluoric acid (HF), acetic acid (CH)3COOH) in a predetermined ratio. In some examples, the hydrofluoric acid aqueous solution may be selected as a solution in which HF and ultrapure Water (deinized Water) are mixed in a set ratio. In some instances, gold is desirable for epitaxial growth furnacesAnd (4) evaluating the contamination, and preparing a silicon wafer sample to be evaluated according to the condition that the silicon wafer grows an epitaxial layer in the epitaxial growth furnace.
For the technical solution shown in fig. 1, in some possible implementations, the silicon wafer sample 21 to be tested may be manually loaded into the plastic package 22, as shown in fig. 2; then, a proper amount of passivation solution 23 is injected into the plastic packaging bag 22 so that the passivation solution 23 is diffused on the whole surface of the silicon wafer sample 21 to be tested, as shown in fig. 3. In other possible implementation manners, the bagging process of the silicon wafer sample 21 to be tested may be performed by a machine or equipment for bagging a silicon wafer, or after the silicon wafer sample 21 to be tested is loaded into the plastic bag 22, the passivation solution 23 may be injected into the plastic bag 22 containing the silicon wafer sample 21 to be tested by the equipment or machine for injecting a liquid into the plastic bag 22. In some examples, the plastic Bag 22 may be selected from a clear polyethylene Bag (polyethylene Bag) or a polypropylene Bag. In another example, the passivation solution 23 is preferably an Iodine-Methanol solution prepared by mixing Iodine (iododine) and Methanol (Methanol) at a predetermined ratio, and the passivation solution 23 may be a solution prepared by mixing a halogen element such as Bromine (Bromine) having a strong oxidizing power with Ethanol (Ethanol) or Methanol (Methanol) at a predetermined ratio; however, in the process of measuring the minority carrier lifetime, an iodine methanol solution is generally used as the passivation solution 23 in order to obtain a high passivation effect, and the minority carrier lifetime can be rapidly and stably measured by saturating dangling bonds on the surface of the silicon wafer with the iodine methanol solution.
It should be noted that, after the plastic package bag 22 containing the silicon wafer sample 21 to be tested is filled with the passivation solution 23, the chemical passivation process is started, and from this point on, until the minority carrier lifetime in the silicon wafer sample to be tested is measured by using the μ -PCD method, a passivation solution thin film with a uniform thickness needs to be formed on the surface of the silicon wafer sample 21 to be tested, based on which, for the technical scheme shown in fig. 1, in some possible implementation manners, as shown in fig. 4, the double-roller mechanism 11 may include: a first conveyor belt 111, a second conveyor belt 112, and a pair of rolling rollers 113 fixed at a set interval in a vertical direction and having opposite rolling directions; the first conveyor belt 111 is used for conveying the plastic package bag 22 filled with the silicon wafer sample 21 to be tested and the passivation solution 23 to the rolling roller 113 for rolling as shown by an arrow; the second conveyor belt 112 is used for conveying the plastic packaging bags 22 which are subjected to the rolling grinding to the sealing mechanism 12; the rolling direction of the lower roller 113-1 of the pair of rolling rollers 113 located below is the same as the conveying direction of the first conveyor belt, and the rolling direction of the upper roller 113-2 of the pair of rolling rollers 113 located above is opposite to the rolling direction of the lower roller 113-1, as indicated by arrows in fig. 4, so that the rolling direction of the pair of rolling rollers 113 coincides with the conveying direction of the first conveyor belt 111 and the conveying direction of the second conveyor belt 112; and the rolling roller pair 113 rolls the plastic package bag 22 filled with the silicon wafer sample 21 to be tested and filled with the passivation solution 23 in the sequence from the bag bottom to the bag opening, as shown by the arrow in fig. 5. It can be understood that rolling is performed in the order from the bottom to the opening of the bag, which not only can remove air bubbles remaining in the plastic packaging bag 22, but also can keep the passivation solution 23 uniformly coated on the surface of the silicon wafer sample 21 to be tested to form a passivation solution film with uniform thickness.
In some examples, the first conveyor belt 111 and/or the second conveyor belt 112 may preferably be a conveyor belt, and the conveyor belt is conveyed by power provided by a driving device such as a motor, and the conveying direction is consistent with the rolling direction of the rolling rollers. In other examples, the first conveyor belt 111 and/or the second conveyor belt 112 may preferably include a plurality of horizontally fixed conveying rollers, and the plurality of conveying rollers may also be driven by a motor or the like to roll for conveying, and the rolling direction of the conveying rollers is consistent with the rolling direction of the rolling rollers. In some examples, as shown in fig. 6, the dual roller mechanism 11 may further include a fixed base 114 disposed oppositely, and the roller pair may be disposed on the fixed base in a vertical direction and each roller may be horizontally fixed.
It can be understood that the distance T between the rolling roller pair is related to the thickness a of the silicon wafer sample to be measured, the thickness B of the plastic package bag and the thickness C of the passivation solution film, and specifically includes: t = a + B + C, and a typical possible range of passivation solution film thickness is 0.1 millimeters (mm) to 1mm, with a common and representative thickness of 0.1mm, so the spacing T = a + B +0.1mm between the pair of rolling rollers. Further, in order to realize the thickness adjustment of the passivation solution thin film, in the above example, as shown in fig. 7, a vertical guide rail 1141 is disposed outside the fixed base 114, an upper rolling roller of the rolling roller pair is fixed on the fixed base 114 by an adjusting screw 1142, and a position height of the adjusting screw 1142 in the guide rail 1141 is adjusted, so that a distance T between the rolling roller pair can be changed between 0.1mm and 1mm, and in addition, in order to improve an adjustment accuracy, a scale for marking a height may be further disposed on the guide rail 1141 to clearly indicate the distance T between the rolling roller pair.
In addition, in the above example, during the rolling process, the bag mouth of the plastic bag may flow out of the passivation solution from the bag mouth due to the rolling pressure, and the passivation solution is generally strong in oxidizability and dangerous to human body and environment, so as shown in fig. 8, the apparatus 1 further includes a passivation solution recovery table 115 at the first conveyor belt 111, so as to recover the passivation solution flowing out of the bag mouth of the plastic bag during the rolling process for passivating the subsequent silicon wafer sample to be tested, thereby saving passivation solution resources and preventing the damage of the passivation solution through special storage.
After the double roller mechanism 11 finishes rolling, the plastic packaging bag is conveyed to a sealing mechanism 12 for sealing, preferably, the sealing mechanism 12 may be a sealer with a hot wire, and is sealed according to the shape of the silicon wafer sample 21 to be tested, which is contained in the plastic packaging bag 22, to form a sealing line 90, as shown in fig. 9, so as to maintain the passivation solution film of uniform thickness coated on the surface of the silicon wafer sample to be tested.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. The equipment for passivating the silicon wafer is characterized by comprising a double-roller mechanism and a sealing mechanism; wherein, two rolling wheel mechanisms utilize the twin roller of setting for the interval to be equipped with the silicon chip sample that awaits measuring and pour into two faces of the plastic envelope of passivation liquid simultaneously and roll and grind, sealing mechanism follows the silicon chip sample that awaits measuring in the plastic envelope of the shape of the silicon chip sample that awaits measuring is sealed the silicon chip sample that awaits measuring in rolling and grinding.
2. The apparatus of claim 1, wherein the dual roller mechanism comprises: the device comprises a first conveyor belt, a second conveyor belt and a pair of rolling rollers which are fixed at a set interval along the vertical direction and have opposite rolling directions; the first conveyor belt is used for conveying the plastic package bag filled with the silicon wafer sample to be tested and injected with the passivation solution to the rolling roller pair for rolling; the second conveyor belt is used for conveying the plastic packaging bags subjected to rolling grinding to the sealing mechanism; the rolling direction of a lower roller positioned below the rolling roller pair is the same as the conveying direction of the first conveyor belt, and the rolling direction of an upper roller positioned above the rolling roller pair is opposite to the rolling direction of the lower roller, so that the rolling direction of the rolling roller pair is consistent with the conveying direction of the first conveyor belt and the conveying direction of the second conveyor belt; and the rolling roller pair rolls the plastic package bag filled with the silicon wafer sample to be tested and injected with the passivation solution in sequence from the bag bottom to the bag opening.
3. The apparatus according to claim 2, wherein the double roller mechanism further comprises a fixed base oppositely disposed, the pair of rolling rollers being disposed on the fixed base in a vertical direction and each rolling roller being horizontally fixable.
4. The apparatus according to claim 3, wherein a vertical guide rail is provided outside the fixed base, the upper rolling roller of the pair of rolling rollers is fixed on the fixed base by an adjusting screw, and the height of the adjusting screw in the guide rail is adjusted so that the distance T between the pair of rolling rollers is changed within a set range.
5. The apparatus of claim 4, wherein a scale for marking height is further provided on the track to clearly indicate the spacing between the pair of rolling rollers.
6. The apparatus according to claim 2, wherein the distance between the pair of rolling rollers is the sum of the thickness of the silicon wafer sample to be tested, the thickness of the plastic packaging bag and the thickness of the passivation solution film.
7. The equipment according to claim 2, further comprising a passivation solution recovery table arranged at the first conveyor belt, wherein the passivation solution recovery table is used for recovering passivation solution flowing out of the bag opening of the plastic packaging bag in the rolling process and passivating subsequent silicon wafer samples to be tested.
8. The apparatus as claimed in claim 1, wherein the sealing mechanism comprises a sealer having a hot wire capable of sealing in accordance with the shape of the silicon wafer sample to be tested contained in the plastic envelope to form a sealing line, thereby maintaining the passivation solution thin film coated on the surface of the silicon wafer sample to be tested in a uniform thickness.
9. The apparatus of claim 1, wherein the passivation solution includes an iodine-methanol solution prepared by mixing iodine and methanol at a predetermined ratio, and a solution prepared by mixing a halogen element having a strong oxidizing power and ethanol or methanol at a predetermined ratio.
10. The apparatus of claim 1, wherein the plastic bag comprises a clear polyethylene bag or a polypropylene bag.
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| CN202022465491.0U CN212134874U (en) | 2020-10-30 | 2020-10-30 | Device for passivating silicon wafer |
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| CN202022465491.0U CN212134874U (en) | 2020-10-30 | 2020-10-30 | Device for passivating silicon wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116020692A (en) * | 2022-12-26 | 2023-04-28 | 西安奕斯伟材料科技有限公司 | Silicon wafer passivation system and working method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116020692A (en) * | 2022-12-26 | 2023-04-28 | 西安奕斯伟材料科技有限公司 | Silicon wafer passivation system and working method thereof |
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