CN111517275B - 一种实用化射频mems开关双层牺牲层的制备方法 - Google Patents
一种实用化射频mems开关双层牺牲层的制备方法 Download PDFInfo
- Publication number
- CN111517275B CN111517275B CN202010385823.6A CN202010385823A CN111517275B CN 111517275 B CN111517275 B CN 111517275B CN 202010385823 A CN202010385823 A CN 202010385823A CN 111517275 B CN111517275 B CN 111517275B
- Authority
- CN
- China
- Prior art keywords
- wafer
- layer
- radio frequency
- photoresist
- sacrificial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00611—Processes for the planarisation of structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0181—Physical Vapour Deposition [PVD], i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010385823.6A CN111517275B (zh) | 2020-05-09 | 2020-05-09 | 一种实用化射频mems开关双层牺牲层的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010385823.6A CN111517275B (zh) | 2020-05-09 | 2020-05-09 | 一种实用化射频mems开关双层牺牲层的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111517275A CN111517275A (zh) | 2020-08-11 |
CN111517275B true CN111517275B (zh) | 2023-06-02 |
Family
ID=71912587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010385823.6A Active CN111517275B (zh) | 2020-05-09 | 2020-05-09 | 一种实用化射频mems开关双层牺牲层的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111517275B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112731983B (zh) * | 2020-12-09 | 2022-04-29 | 全立传感科技(南京)有限公司 | 一种箔式电阻应变计基底胶固化方法 |
CN112919405B (zh) * | 2021-01-27 | 2024-05-24 | 中北大学 | 一种rf mems开关的原位薄膜封装方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06326222A (ja) * | 1993-04-23 | 1994-11-25 | Fujitsu Ltd | 光学的画像形成可能材料、フォトレジスト材料等に高い高アスペクト比のvia及び溝を形成する方法 |
TW200626482A (en) * | 2004-09-27 | 2006-08-01 | Idc Llc | Method and system for xenon fluoride etching with enhanced efficiency |
EP1900679A1 (fr) * | 2006-09-15 | 2008-03-19 | Commissariat A L'energie Atomique | Mise en forme d'une couche sacrificielle pour realiser un element suspendu |
CN104627956A (zh) * | 2015-02-09 | 2015-05-20 | 中国电子科技集团公司第五十四研究所 | 一种rf mems器件双层光刻胶牺牲层的制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AUPR846701A0 (en) * | 2001-10-25 | 2001-11-15 | Microtechnology Centre Management Limited | A method of fabrication of micro-devices |
WO2007043383A1 (ja) * | 2005-10-07 | 2007-04-19 | Nikon Corporation | 微小構造体およびその製造方法 |
CN101276778A (zh) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | 一种利用光敏胶层制作空气桥的方法 |
CN101030033A (zh) * | 2007-03-30 | 2007-09-05 | 华东师范大学 | 用叠层光刻胶牺牲层制备mems悬空结构的方法 |
EP2129619A2 (en) * | 2007-04-04 | 2009-12-09 | Qualcomm Mems Technologies, Inc. | Eliminate release etch attack by interface modification in sacrificial layers |
US8450144B2 (en) * | 2009-03-26 | 2013-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN101575083B (zh) * | 2009-06-15 | 2011-11-09 | 中北大学 | 微机械热电堆红外探测器 |
US8722445B2 (en) * | 2010-06-25 | 2014-05-13 | International Business Machines Corporation | Planar cavity MEMS and related structures, methods of manufacture and design structures |
CN105480939A (zh) * | 2015-12-03 | 2016-04-13 | 中国科学院物理研究所 | 一种具有液体全超憎功能的三维结构的制备方法 |
CN107331601A (zh) * | 2017-06-29 | 2017-11-07 | 苏州苏纳光电有限公司 | 两次曝光的光刻胶沉积和金属剥离方法 |
CN107640735B (zh) * | 2017-07-24 | 2019-05-24 | 中北大学 | 一种实用化射频mems开关的制造方法 |
-
2020
- 2020-05-09 CN CN202010385823.6A patent/CN111517275B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06326222A (ja) * | 1993-04-23 | 1994-11-25 | Fujitsu Ltd | 光学的画像形成可能材料、フォトレジスト材料等に高い高アスペクト比のvia及び溝を形成する方法 |
TW200626482A (en) * | 2004-09-27 | 2006-08-01 | Idc Llc | Method and system for xenon fluoride etching with enhanced efficiency |
EP1900679A1 (fr) * | 2006-09-15 | 2008-03-19 | Commissariat A L'energie Atomique | Mise en forme d'une couche sacrificielle pour realiser un element suspendu |
CN104627956A (zh) * | 2015-02-09 | 2015-05-20 | 中国电子科技集团公司第五十四研究所 | 一种rf mems器件双层光刻胶牺牲层的制备方法 |
Non-Patent Citations (1)
Title |
---|
脉冲无氰电镀在硅基RF-MEMS滤波器中的应用及优化;严阳阳;刘斌;王士伟;卢威;丁英涛;;北京理工大学学报(第01期);72-76 * |
Also Published As
Publication number | Publication date |
---|---|
CN111517275A (zh) | 2020-08-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111517275B (zh) | 一种实用化射频mems开关双层牺牲层的制备方法 | |
JPH1075038A (ja) | 配線基板とその製造方法 | |
CN111490328A (zh) | 一种介质波导滤波器金属化工艺 | |
CN111522208A (zh) | 使用正胶做掩膜进行金属薄膜剥离的方法 | |
CN110713169B (zh) | 一种提高射频mems开关中聚酰亚胺牺牲层平整度的方法 | |
CN107731904A (zh) | 一种晶圆背孔光刻胶填充方法 | |
CN114613584B (zh) | 一种软磁材料和软磁带材的刻蚀方法 | |
CN114496809A (zh) | Htcc基板薄膜多层布线的制作方法 | |
CN108249390A (zh) | 一种在聚酰亚胺薄膜表面制作微纳结构的方法 | |
CN110190025B (zh) | 一种单层硅衬底的通孔刻蚀方法 | |
CN115504430A (zh) | 一种mems电子器件有机介电层的低温制备方法 | |
CN112635322A (zh) | 一种改善磷化铟异质结双极型晶体管散热的制备方法 | |
CN113097120A (zh) | 一种基于金属箔基底的薄膜传感器的制备方法 | |
CN114273992A (zh) | 一种图案化金属层表面抛光方法 | |
CN105070656A (zh) | 一种降低GaAs背孔工艺中等离子体刻蚀机腔体污染的方法 | |
CN107177866A (zh) | 金属基底上制备微射频t形功分器的方法 | |
CN109062010A (zh) | 改善光刻胶表面粗糙度的方法 | |
CN113054058A (zh) | 一种柔性疏水基衬底上图案化刻蚀pedot:pss透明电极的紫外光刻方法 | |
CN105140155A (zh) | 一种用于GaAs MMIC减薄工艺的粘片方法 | |
JP3911209B2 (ja) | 有機薄膜の表面処理方法 | |
CN111276443B (zh) | 微波薄膜混合集成电路的制备方法 | |
JP3871494B2 (ja) | スタンパの作成方法 | |
CN118166404A (zh) | 薄膜型探针卡及其制备方法 | |
CN115011915A (zh) | 一种冗余薄膜热电偶的制备方法 | |
CN115612961A (zh) | 一种介质波导滤波器金属化工艺 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Wang Junqiang Inventor after: Zhang Shiyi Inventor after: Gao Yuesheng Inventor after: Wu Qiannan Inventor after: Li Mengwei Inventor before: Wang Junqiang Inventor before: Zhang Shiyi |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20221128 Address after: No. 3, Xueyuan Road, Taiyuan, Shanxi 030006 Applicant after: NORTH University OF CHINA Applicant after: Nantong Institute for Advanced Study Address before: 030051, Xueyuan Road, Shanxi Province, Taiyuan Province, No. 3 Applicant before: NORTH University OF CHINA Applicant before: Nantong Institute of intelligent optics, North China University |
|
GR01 | Patent grant | ||
GR01 | Patent grant |