CN111509126A - Vertical-structure photosensitive field effect transistor based on perovskite single crystal sheet - Google Patents
Vertical-structure photosensitive field effect transistor based on perovskite single crystal sheet Download PDFInfo
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Abstract
The invention provides a perovskite monocrystal thin sheet-based vertical-structure photosensitive field effect transistor, which comprises a bottom gate layer, a bottom gate insulating layer, a source layer, a photosensitive layer, a drain layer and a light source, wherein the top and the bottom of the bottom gate layer and the drain layer are respectively the bottom gate layer and the drain layer; the photosensitive layer is a perovskite single crystal sheet, and the thickness of the photosensitive layer is equal to the length of the conductive channel; the photosensitive layer is irradiated by a light source to absorb photon energy, so that the photosensitive layer material forms excitons. The photosensitive field effect transistor overcomes the negative influence caused by perovskite crystal boundary, thereby effectively improving charge transmission, reducing the length of a conductive channel of the device with the vertical structure, greatly improving the working current of the device and reducing the threshold voltage of the device, and excitons can be effectively separated and collected by a source electrode and a drain electrode, thereby realizing high-efficiency photoelectric conversion and quick photoresponse.
Description
Technical Field
The invention relates to the technical field of electronic devices, in particular to a vertical structure field photosensitive effect transistor based on a perovskite single crystal sheet.
Background
Recently, a new material, methylaminohalogenated lead perovskite (CH)3NH3PbX3X ═ halogen), which has excellent photoelectric characteristics such as adjustable band gap, high absorption coefficient, high carrier mobility, and ultra-long carrier transport length, etc. due to its unique structure. Since 2009, such new semiconductor materials have been widely used in optoelectronic devices such as solar cells, light emitting diodes, lasers, and photodetectors. At present, some groups also explored the use of such materials on field effect transistors, which would help reveal the nature of the charge transport of the material. At this stage, some perovskite field effect transistors based on planar structures have been studied with some pioneering efforts. The Cesare team reports CH for the first time3NH3PbI3The perovskite has bipolar characteristics at a temperature of 78K; the Duan team subsequently demonstrated CH3NH3PbI3The electron mobility of perovskite is higher than 1.0cm at 77K temperature2V-1s-1(ii) a Jurchescu team reported CH at room temperature3NH3PbI3-xClxHole and electron mobility of more than 10cm2V-1s-1(ii) a The Henning group found that the carrier mobility was temperature dependent and revealed negative mobility coefficients in three different temperature states. Despite the increasing performance of perovskite field effect transistors, carrier mobility remains low compared to some inorganic materials. This is greatly related to the form and quality of perovskite materials, most of the perovskite materials used in photovoltaic devices such as solar cells, photodetectors, photodiodes and the like are polycrystalline thin films of several hundred nanometers, their size is much smaller than the channel length of the devices, and grain boundaries also affect the transport of charges in the horizontal direction, weakening the charge coupling.
The performance of perovskite field effect transistors is not only related to the morphology and quality of the perovskite material, but also to the length of the conduction channel of the device. In the 80 s of the 20 th century, vertical structure field effect transistors were first reported in conventional semiconductor devices and have been widely used due to their special device structuresAttention is paid. Currently, research on vertical structure field effect transistors is mainly focused on organic semiconductors and inorganic materials, such as WS2，WSe2，MoS2DPA, etc. Compared with the traditional planar structure field effect transistor, the vertical structure field effect transistor has a much smaller conducting channel length, because the conducting channel length of the structure is determined by the thickness of the photosensitive layer material, and the short-channel device can reduce the transit time of carriers, which is beneficial to improving the efficiency of the carriers effectively collected by the source electrode and the drain electrode.
Therefore, it is necessary to research a vertical-structure photosensitive field effect transistor based on perovskite single crystal thin sheet, aiming at the influence of the morphology of perovskite material, grain boundary and conductive channel length of device on charge transmission.
Disclosure of Invention
The invention aims to provide a vertical structure field effect transistor based on perovskite single crystal sheets, aiming at the defects of the prior art and aiming at the influence of the morphology of perovskite materials, grain boundaries and the conductive channel length of a device on charge transmission.
The object of the invention can be achieved by the following technical measures:
the invention provides a vertical structure field effect transistor based on a perovskite single crystal sheet, which comprises a bottom grid layer, a bottom grid insulating layer, a source layer, a semiconductor layer, a drain layer and a light source, wherein the top and the bottom of the vertical structure field effect transistor are respectively the bottom grid layer and the drain layer; the semiconductor layer is a perovskite single crystal sheet, and the thickness of the semiconductor layer is equal to the length of the conductive channel; the photosensitive layer is irradiated by a light source to absorb photon energy, so that the photosensitive layer material forms excitons.
In some preferred embodiments, the light source is one of a xenon lamp, a mercury lamp, an incandescent lamp, and an L ED lamp, or is a continuous laser light source, or is a pulsed laser light source.
In some preferred embodiments, the crystal structure of the perovskite single crystal sheet is any one of a cubic phase structure, a tetragonal phase structure, and an orthorhombic phase structure.
In some preferred embodiments, the perovskite single crystal is APbX3A perovskite single crystal, wherein,
a is L i, Na, K, Rb, Cs, CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Any one of or L i, Na, K, Rb, Cs and CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Doping randomly with each other;
x is any one of Br, Cl, I and F, or Br, Cl, I and F are doped mutually at will.
In some preferred embodiments, the perovskite single crystal is AMX3A perovskite single crystal, wherein,
m is any one of Be, Mg, Ca, Sr, Ba, Zn, Ge, Sn, Pb, Fe, Co and Ni, or is any one of Be, Mg, Ca, Sr, Ba, Zn, Ge, Sn, Pb, Fe, Co and Ni which are doped mutually;
a is L i, Na, K, Rb, Cs, CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Any one of or L i, Na, K, Rb, Cs and CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Doping randomly with each other;
x is any one of Br, Cl, I and F, or Br, Cl, I and F are doped mutually at will.
In some preferred embodiments, the perovskite single crystal is AMX6A binary unit cell perovskite single crystal, wherein,
m is any one of Be, Mg, Ca, Sr, Ba, Zn, Ge, Sn, Pb, Fe, Co and Ni, or is any one of Be, Mg, Ca, Sr, Ba, Zn, Ge, Sn, Pb, Fe, Co and Ni which are doped mutually;
a is L i, Na, K, Rb, Cs, CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Any one of or L i, Na, K, Rb, Cs and CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Doping randomly with each other;
x is any one of Br, Cl, I and F, or Br, Cl, I and F are doped mutually at will.
In some preferred embodiments, the material of the bottom gate layer is Si; the bottom gate insulating layer is made of SiO2Polymethyl methacrylate, and CYTOP.
In some preferred embodiments, the source layer is made of any one of gold, silver, platinum and aluminum, or WS2、WSe2、MoS2Or graphene, or a carbon nanotube.
In some preferred embodiments, the source layer is a patterned nano-electrode.
In some preferred embodiments, the drain layer is made of any one of gold, silver, platinum, and aluminum.
The vertical-structure photosensitive field effect transistor based on the perovskite single crystal sheet overcomes the negative influence caused by perovskite crystal boundaries, thereby effectively improving charge transmission, reducing the length of a conductive channel of the device with the vertical structure, greatly improving the working current of the device and reducing the threshold voltage of the device, and effectively separating and collecting excitons by a source electrode and a drain electrode due to the small length of the channel of the device with the structure, thereby realizing efficient photoelectric conversion and quick photoresponse.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural view of a vertical structure photosensitive field effect transistor based on perovskite single crystal flakes of the present invention;
FIG. 2 is CH3NH3PbBr3An optical photographic image of the perovskite single crystal;
FIG. 3 is a schematic diagram of the crystal structure of a perovskite single crystal as a function of temperature;
FIG. 4 is based on CH3NH3PbBr3The output characteristic curve of the photosensitive field effect transistor with the vertical structure of the perovskite single crystal sheet under different gate voltages;
FIG. 5 is based on CH3NH3PbBr3The transfer characteristic curve of the photosensitive field effect transistor with the vertical structure of the perovskite single crystal sheet under different drain voltages;
FIG. 6 is based on CH3NH3PbBr3The change conditions of the light responsivity and the detectivity of the photosensitive field effect transistor with the vertical structure of the perovskite single crystal sheet under different illumination intensities;
description of reference numerals: 1-bottom gate layer; 2-bottom gate insulating layer; 3-source layer; 4-a photosensitive layer; 5-a drain layer; 6-light source.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
In order to make the description of the present disclosure more complete and complete, the following description is given for illustrative purposes with respect to the embodiments and examples of the present invention; it is not intended to be the only form in which the embodiments of the invention may be practiced or utilized. The embodiments are intended to cover the features of the various embodiments as well as the method steps and sequences for constructing and operating the embodiments. However, other embodiments may be utilized to achieve the same or equivalent functions and step sequences.
The invention provides a perovskite monocrystal flake-based vertical-structure photosensitive field effect transistor, which is shown in figure 1 and is a structural schematic diagram of the perovskite monocrystal flake-based vertical-structure photosensitive field effect transistor, and the perovskite monocrystal flake-based vertical-structure photosensitive field effect transistor comprises a bottom gate layer 1, a bottom gate insulating layer 2, a source layer 3, a photosensitive layer 4, a drain layer 5 and a light source 6, wherein the top and the bottom of the vertical-structure field effect transistor are respectively the bottom gate layer 1 and the drain layer 5, the bottom gate insulating layer 2 is positioned between the bottom gate layer 1 and the source layer 5, and the photosensitive layer 4 is positioned between the drain layer 5 and the source layer 3; the photosensitive layer 4 is a perovskite single crystal sheet, and the thickness of the photosensitive layer is equal to the length of the conductive channel; the photosensitive layer 4 is irradiated by the light source 6 to absorb photon energy, so that the photosensitive layer material forms excitons.
The irradiation light source 6 for the photosensitive layer 4 may be selected from one of a xenon lamp, a mercury lamp, an incandescent lamp, and an L ED lamp, or a continuous laser light source, or a pulsed laser light source.
The vertical structure field effect transistor based on the perovskite single crystal sheet of the invention works as follows:
when the photosensitive layer material absorbs photon energy to form excitons in the presence of illumination, the bottom gate insulating layer forms a capacitor under the gate voltage, so that the photogenerated excitons are effectively split into carriers, and the carriers are accumulated at the interface close to the drain and the gate. With the continuous accumulation of the trapped carriers, the threshold voltage of the field effect transistor is continuously changed by the built-in carriers, and the number of the carriers in the photosensitive layer is adjusted by controlling an effective potential barrier between the source and the photosensitive layer through the gate voltage, so that the current amplification is realized.
As shown in FIG. 2, is CH3NH3PbBr3The optical photo image of the perovskite single crystal shows that the perovskite single crystal has fewer grain boundaries and defects, and is more favorable for charge transmission compared with other forms of perovskites, and the thickness of the perovskite single crystal sheet is equal to the length of a conductive channel of a device and ranges from a few nanometers to tens of micrometers.
While the crystal structure of a perovskite single crystal is temperature dependent, its crystal structure is different at different temperatures and can be changed by changing the temperature. As shown in FIG. 3, which is a schematic diagram of the crystal structure of the perovskite single crystal as a function of temperature, the perovskite single crystal of the orthorhombic phase structure is transformed into the orthorhombic phase structure at a temperature of 130K to 150K, and the perovskite single crystal of the tetragonal phase structure is transformed into the cubic phase structure at a temperature of 230K to 250K. The perovskite single crystal adopted in the vertical structure field effect transistor based on the perovskite single crystal sheet can be in any one of a cubic phase structure, a tetragonal phase structure and an orthogonal phase structure.
There are also many choices for the type of perovskite single crystal, which can be chosen as APbX3A perovskite single crystal, wherein:
a is L i, Na, K, Rb, Cs, CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Any one of or L i, Na, K, Rb, Cs and CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Doping randomly with each other;
x is any one of Br, Cl, I and F, or Br, Cl, I and F are doped mutually at will.
The perovskite single crystal can also be selected to be AMX3A perovskite single crystal, wherein:
m is any one of Be, Mg, Ca, Sr, Ba, Zn, Ge, Sn, Pb, Fe, Co and Ni, or is any one of Be, Mg, Ca, Sr, Ba, Zn, Ge, Sn, Pb, Fe, Co and Ni which are doped mutually;
a is L i, Na, K, Rb, Cs, CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Any one of or L i, Na, K, Rb, Cs and CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Doping randomly with each other;
x is any one of Br, Cl, I and F, or Br, Cl, I and F are doped mutually at will.
The perovskite single crystal can also be selected to be AMX6A binary unit cell perovskite single crystal, wherein:
m is any one of Be, Mg, Ca, Sr, Ba, Zn, Ge, Sn, Pb, Fe, Co and Ni, or is any one of Be, Mg, Ca, Sr, Ba, Zn, Ge, Sn, Pb, Fe, Co and Ni which are doped mutually;
a is L i, Na, K, Rb, Cs, CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Any one of or L i, Na, K, Rb, Cs and CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Doping randomly with each other;
x is any one of Br, Cl, I and F, or Br, Cl, I and F are doped mutually at will.
In addition, the material of the bottom gate layer 1 may be Si, and the material of the bottom gate insulating layer 2 may be SiO2Polymethyl methacrylate, and CYTOP. The material of the source layer 3 may be gold, silver, platinum, or aluminum, or WS2、WSe2、MoS2Graphene, or carbon nanotubes. Also, the source layer 3 may be a patterned nano-electrode. The material of the drain layer 5 may be any one of gold, silver, platinum, and aluminum.
FIG. 4 is based on CH3NH3PbBr3Output characteristic curves of vertical structure photosensitive field effect transistors of perovskite single crystal thin slices at different gate voltages, FIG. 5 is based on CH3NH3PbBr3The transfer characteristic curve of the vertical structure photosensitive field effect transistor of the perovskite monocrystal thin slice under different drain voltages. Wherein, the bottom gate layer 1 is made of Si, the bottom insulating layer 2 is made of SiO2, the source layer 3 is made of graphene, and the photosensitive layer 4 is made of CH3NH3PbBr3The perovskite single crystal, drain layer 5 material is Au. It can be seen that the characteristics of both the output curve characteristic and the transfer curve characteristic are dependent on the intensity of light, and the photoelectric performance is high.
FIG. 6 is based on CH3NH3PbBr3The change conditions of the light responsivity and the detectivity of the photosensitive field effect transistor with the vertical structure of the perovskite monocrystal thin sheet under different illumination intensities. The carrier mobility of electrons (holes) of the device reaches 17.64(11.62) cm at room temperature through calculation2V-1s-1(ii) a As can be seen from FIG. 6, when the illumination intensity is 13.44mW/cm2When the optical responsivity reaches 70mA/W, the detectivity reaches 2 × 1013Jones。
The vertical-structure photosensitive field effect transistor based on the perovskite single crystal sheet overcomes the negative influence caused by perovskite crystal boundaries, thereby effectively improving charge transmission, and the vertical-structure device reduces the length of a conductive channel, greatly improves the working current of the device and reduces the threshold voltage of the device, and excitons can be effectively separated and collected by a source electrode and a drain electrode, thereby realizing efficient photoelectric conversion and rapid photoresponse.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The vertical structure photosensitive field effect transistor based on the perovskite single crystal sheet is characterized by comprising a bottom gate layer, a bottom gate insulating layer, a source layer, a photosensitive layer, a drain layer and a light source, wherein the bottom gate layer and the drain layer are respectively arranged at the top and the bottom of the vertical structure field effect transistor, the bottom gate insulating layer is positioned between the bottom gate layer and the source layer, and a semiconductor layer is positioned between the drain layer and the source layer; the photosensitive layer is a perovskite single crystal sheet, and the thickness of the photosensitive layer is equal to the length of the conductive channel; the photosensitive layer is irradiated by a light source to absorb photon energy, so that the photosensitive layer material forms excitons.
2. The vertical structure photosensitive field effect transistor based on perovskite single crystal flake according to claim 1, wherein the light source is one of xenon lamp, mercury lamp, incandescent lamp, L ED lamp, or is a continuous laser light source, or is a pulsed laser light source.
3. The vertical structure photoactive field-effect transistor based on perovskite single crystal flakes according to claim 1, wherein the crystal structure of the perovskite single crystal flakes is any one of a cubic phase structure, a tetragonal phase structure, and an orthorhombic phase structure.
4. The vertical structure photosensitive field effect transistor based on perovskite single crystal flake according to claim 1, wherein the perovskite single crystal is APbX3A perovskite single crystal, wherein,
a is L i, Na, K, Rb, Cs, CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Any one of or L i, Na, K, Rb, Cs and CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Doping randomly with each other;
x is any one of Br, Cl, I and F, or Br, Cl, I and F are doped mutually at will.
5. The vertical structure photosensitive field effect transistor based on perovskite single crystal sheet as claimed in claim 1, wherein the perovskite single crystal is AMX3A perovskite single crystal, wherein,
m is any one of Be, Mg, Ca, Sr, Ba, Zn, Ge, Sn, Pb, Fe, Co and Ni, or is any one of Be, Mg, Ca, Sr, Ba, Zn, Ge, Sn, Pb, Fe, Co and Ni which are doped mutually;
a is L i, Na, K, Rb, Cs, CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Any one of or L i, Na, K, Rb, Cs and CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Doping randomly with each other;
x is any one of Br, Cl, I and F, or Br, Cl, I and F are doped mutually at will.
6. The vertical structure photosensitive field effect transistor based on perovskite single crystal sheet as claimed in claim 1, wherein the perovskite single crystal is AMX6A binary unit cell perovskite single crystal, wherein,
m is any one of Be, Mg, Ca, Sr, Ba, Zn, Ge, Sn, Pb, Fe, Co and Ni, or is any one of Be, Mg, Ca, Sr, Ba, Zn, Ge, Sn, Pb, Fe, Co and Ni which are doped mutually;
a is L i, Na, K, Rb, Cs, CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Any one of or L i, Na, K, Rb, Cs and CH3NH3，HC(NH2)2，C6H5CH2CH2NH3Doping randomly with each other;
x is any one of Br, Cl, I and F, or Br, Cl, I and F are doped mutually at will.
7. The perovskite single crystal flake based vertical structure photosensitive field effect transistor as claimed in claim 1, wherein the bottom gate layer is made of Si; the bottom gate insulating layer is made of SiO2Polymethyl methacrylate, and CYTOP.
8. The vertical structure phototransistor based on perovskite single crystal thin sheet as set forth in claim 1, wherein the material of the source layer is any one of gold, silver, platinum and aluminum, or WS2、WSe2、MoS2Or graphene, or a carbon nanotube.
9. The perovskite single crystal flake based vertical structure photosensitive field effect transistor of claim 1, wherein the source layer is a patterned nanoelectrode.
10. The vertical structure finfet according to claim 1, wherein the drain layer is made of any one of gold, silver, platinum and aluminum.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325901A (en) * | 2013-05-22 | 2013-09-25 | 中国科学院半导体研究所 | Vertical structure surface plasmon reinforced GaN-based nanorod LED and preparation method thereof |
| CN108987600A (en) * | 2018-07-20 | 2018-12-11 | 福州大学 | A kind of vertical structure light-emitting transistor and preparation method thereof based on quantum dot |
| CN109037458A (en) * | 2018-07-24 | 2018-12-18 | 上海集成电路研发中心有限公司 | Novel photoelectric-detection device based on perovskite and preparation method thereof |
| CN109659436A (en) * | 2018-12-19 | 2019-04-19 | 福州大学 | A kind of all-transparent heterojunction phototransistors and preparation method thereof |
-
2019
- 2019-07-19 CN CN201910656234.4A patent/CN111509126A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325901A (en) * | 2013-05-22 | 2013-09-25 | 中国科学院半导体研究所 | Vertical structure surface plasmon reinforced GaN-based nanorod LED and preparation method thereof |
| CN108987600A (en) * | 2018-07-20 | 2018-12-11 | 福州大学 | A kind of vertical structure light-emitting transistor and preparation method thereof based on quantum dot |
| CN109037458A (en) * | 2018-07-24 | 2018-12-18 | 上海集成电路研发中心有限公司 | Novel photoelectric-detection device based on perovskite and preparation method thereof |
| CN109659436A (en) * | 2018-12-19 | 2019-04-19 | 福州大学 | A kind of all-transparent heterojunction phototransistors and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| HUO C: "Field-Effect Transistors Based on van-der-Waals-Grown and Dry-Transferred All-Inorganic Perovskite Ultrathin Platelets", 《JOURNAL OF PHYSICAL CHEMISTRY LETTERS》 * |
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