CN108987600A - A kind of vertical structure light-emitting transistor and preparation method thereof based on quantum dot - Google Patents
A kind of vertical structure light-emitting transistor and preparation method thereof based on quantum dot Download PDFInfo
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- CN108987600A CN108987600A CN201810805520.8A CN201810805520A CN108987600A CN 108987600 A CN108987600 A CN 108987600A CN 201810805520 A CN201810805520 A CN 201810805520A CN 108987600 A CN108987600 A CN 108987600A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present invention relates to a kind of vertical structure light-emitting transistor and preparation method thereof based on quantum dot, the vertical structure light-emitting transistor based on quantum dot include the substrate being stacked, grid, insulating layer, netted source electrode, source electrode connection medium, organic semiconductor layer, quantum dot layer, electron transfer layer and drain electrode；The present invention combines the electroluminescence characters of quantum dot light emitting device with the switching characteristic of vertical structure organic transistor, while can reduce the operation voltage of quantum dot light emitting device by regulation grid voltage, realizes the multifunction device that luminous intensity can arbitrarily regulate and control.Not only production method is simple for a kind of preparation method of vertical structure light-emitting transistor based on quantum dot provided by the invention, at low cost, and has biggish application value, provides great convenience for the following raising integrated level and display industry.
Description
Technical field
The present invention relates to organic photoelectrical material field, especially a kind of vertical structure light-emitting transistor based on quantum dot and
Preparation method.
Background technique
With the rapid development of organic electronic technology, also it is evolving and works as in the application of novel consumer electronics field
In.Organic Thin Film Transistors plays important as the base components in organic electronic device in organic electronic device
Role.And light emitting diode with quantum dots compares traditional liquid crystal display device and organic light emitting diode device with many excellent
Gesture, such as power consumption are lower, the shorter response time, higher contrast and wide visual angle, therefore receive vast research work
The extensive concern of person and industry.But light emitting diode with quantum dots needs biggish electric current to go to drive, and traditional plane is organic thin
Film transistor is limited to the low intrinsic mobility of organic semiconducting materials and the too long channel length of device, the current density of device
Too small, service speed is also unhappy, therefore limits its application on organic electronic device.Simultaneously because organic transistor needs
A part of space for occupying display backboard, causes the aperture opening ratio of display device to be limited.Therefore, in order to solve these problems,
Suitable device architecture is had to look for improve the driving capability and response speed of Organic Thin Film Transistors, while being found suitably
Organic Thin Film Transistors and light emitting diode with quantum dots are gathered together and improve the aperture opening ratio and integrated level of device by device architecture,
It realizes the multifunction of individual devices, simplifies the preparation process of device, the function of optimised devices.
Summary of the invention
The preparation method of the purpose of the present invention is to provide a kind of vertical structure light-emitting transistor based on quantum dot, with gram
Take defect existing in the prior art.
To achieve the above object, the technical scheme is that the vertical structure light-emitting transistor based on quantum dot
Including substrate, grid, insulating layer, Source contact electrode, netted source electrode, organic semiconductor layer, the quantum dot layer, electricity being stacked
Sub- transport layer and drain electrode；Wherein Source contact electrode and organic semiconductor layer are arranged at netted source electrode surface, wherein to have
Machine semiconductor layer is substrate, sets gradually quantum dot layer, electron transfer layer, drain electrode；The lighting transistor is using vertical structure
Organic transistor, substrate use transparent substrate, and source electrode is using the electrode material that can form network；The vertical structure is
Grid, insulating layer, netted source electrode, organic semiconductor layer quantum dot layer, electron transfer layer and drain electrode vertical stack, will measure
The electroluminescence characters of son point luminescent device combine with the switching characteristic of vertical structure organic transistor, while can pass through tune
Grid voltage is controlled to reduce the operation voltage of quantum dot light emitting device, realizes the multifunction device that luminous intensity can arbitrarily regulate and control.
The lighting transistor of the vertical structure uses vertical structure organic transistor in conjunction with light emitting diode with quantum dots
Structure design, the transistor of vertical structure improves the driving capability and service speed of device.By the vertical structure crystal
Pipe is combined together the successfully superhigh-current-density driving quantum using vertical structure transistor with light emitting diode with quantum dots
Point luminescent diode shines, can also be by control grid voltage come the switch of control device, successfully by quantum dot light emitting two
The switching characteristic of pole pipe device and transistor is integrated together, and increases its integrated level and substantially increases aperture opening ratio.
In an embodiment of the present invention, the substrate is transparent, can be rigid substrate and is also possible to flexible substrate.
In an embodiment of the present invention, the grid is prepared in the manner of sputtering, and grid material is transparent metal oxygen
Compound, with a thickness of 30 to 200 nm；
In an embodiment of the present invention, the insulating layer is insulation oxide film, is prepared by way of atomic layer deposition, thick
Degree is 30 to 100 nm；
In an embodiment of the present invention, the netted source electrode is the nano material that can form network, by spin coating, blade coating or
It is prepared by the mode of printing；The Source contact electrode material is gold, silver or aluminium, is prepared by the way of thermal evaporation, with a thickness of 20
To 80 nm.
In an embodiment of the present invention, the organic semiconductor layer is organic semiconductor thin-film, by spin coating, blade coating or is beaten
Prepared by the mode of print, with a thickness of 80 to 120 nm.
In an embodiment of the present invention, the quantum dot layer is quantum dot film, by way of spin coating, blade coating or printing
Preparation, with a thickness of 20 to 40 nm.
In an embodiment of the present invention, the electron transfer layer be metal oxide nano film, by spin coating, blade coating or
Prepared by the mode of printing, with a thickness of 10 to 40 nm.
In an embodiment of the present invention, the drain material is gold, silver or aluminium, is prepared by the way of thermal evaporation, thickness
For 20 to 80 nm.
In an embodiment of the present invention, a kind of vertical structure light-emitting transistor based on quantum dot is as follows
Preparation:
S1: using the glass of certain size as substrate, it is successively ultrasonic in glass cleaner, deionized water, acetone and ethyl alcohol
Cleaning, and put and dry in an oven；
S2: the gate pattern is sputtered by mask plate on glass by the way of magnetron sputtering；
S3: after the gate pattern makes, the insulation is prepared on above-mentioned glass substrate by way of atomic layer deposition
Layer；
S4: in a solvent by the dispersion of source level connection dielectric material, by way of spin coating, blade coating or printing on the insulating layer
Prepare the source level contact electrode；
S5: the source electrode pattern is deposited out by mask plate on Source contact electrode by the way of thermal evaporation；
S6: organic material is dissolved in another organic solvent, dissolution completely after, by way of spin coating, blade coating or printing
The organic semiconductor layer is prepared on the Source contact electrode；
S7: quanta point material is dissolved in specific solvent, after dissolution completely, in institute by way of spin coating, blade coating or printing
It states and prepares the quantum dot layer on organic semiconductor layer, the specific solvent and organic semiconductor layer are immiscible；
S8: electron transport layer materials are dissolved in specified organic solvent, after dissolution completely, pass through spin coating, blade coating or printing
Mode prepares the electron transfer layer on the quantum dot layer, and the specified organic solvent and quantum dot layer are immiscible；
S9: after the electron transfer layer film forming, device is impregnated in the corresponding organic solvent of organic semiconductor layer so that source electrode
It is just independent with organic semiconductor layer；
S10: pass through mask plate on the electron transport layer by the way of thermal evaporation and the drain pattern is deposited out.
Compared to the prior art, the invention has the following advantages:
(1) organic transistor of the present invention is vertical structure, and ultrashort channel length (nanoscale) provides the electricity of device superelevation
Current density and quick service speed.The stacked structure of special vertical structure and light emitting diode with quantum dots is completely compatible, surpasses
High current density can drive light emitting diode with quantum dots to shine, and two pole of quantum dot light emitting can be improved in quick service speed
The switching speed of pipe.
(2) present invention can regulate and control the light emission luminance of device by control grid voltage, and can reduce quantum dot
The operation voltage of light emitting diode.Special vertical structure transistor, not only efficiently solves due to organic semiconducting materials sheet
The problem of transistor device current density caused by body mobility is low is small, low-response also improves driving capability and the behaviour of device
Make speed.
(3) the vertical structure transistor is combined together successfully with light emitting diode with quantum dots using vertical by the present invention
The superhigh-current-density driving light emitting diode with quantum dots of transistor shines, can also be by control grid voltage come control device
Switch, successfully the switching characteristic of light emitting diode with quantum dots device and transistor is integrated together, increases its collection
At spending and substantially increase aperture opening ratio.
(4) a kind of preparation method of vertical structure light-emitting transistor based on quantum dot provided by the invention not only makes
Method is simple, at low cost, and has biggish application value, will improve integrated level for future and display industry provides very greatly
Convenience.
Detailed description of the invention
Fig. 1 is that a kind of structure for vertical structure light-emitting transistor based on quantum dot that in the present invention prepared by embodiment 1 is shown
It is intended to.
[label declaration]: where 110 be substrate, and 120 be grid, and 130 be insulating layer, and 140 be netted source electrode, and 150 be source
Pole contacts electrode, and 160 be organic semiconductor layer, and 170 be quantum dot layer, and 180 be electron transfer layer, and 190 be drain electrode.
Specific embodiment
With reference to the accompanying drawing, technical solution of the present invention is specifically described.
The present embodiment provides a kind of preparation methods of the lighting transistor of vertical structure based on quantum dot, provide a kind of base
In the lighting transistor of the vertical structure of quantum dot, the lighting transistor of the quantum dot vertical structure includes transparent from the bottom up
Substrate, grid, insulating layer, netted source electrode, Source contact electrode, organic semiconductor layer, quantum dot layer, electron transfer layer and leakage
Pole；The vertical structure is netted source electrode, organic semiconductor layer, quantum dot layer, electron transfer layer and the vertical stacking of drain electrode knot
Structure combines the electroluminescence characters of quantum dot light emitting device with the switching characteristic of vertical structure organic transistor, simultaneously
The operation voltage that quantum dot light emitting device can be reduced by regulation grid voltage realizes the Multifunction apparatus that luminous intensity can arbitrarily regulate and control
Part.
Further, in the present embodiment, the transparent substrates can be rigid substrate and be also possible to flexible substrate.
Further, in the present embodiment, the grid is patterning grid prepared by the mode sputtered, and grid material is
Transparent metal oxide, with a thickness of 30 to 200 nm.
Further, in the present embodiment, the insulating layer is insulation oxide film, by way of atomic layer deposition
Preparation, with a thickness of 30 to 50 nm.
Further, in the present embodiment, netted source electrode is the nano material to form network, passes through spin coating, blade coating
Or prepared by the mode of printing；The Source contact electrode material is gold, silver or aluminium, is prepared by the way of thermal evaporation, with a thickness of
20 nm to 80 nm.
Further, in the present embodiment, for the material that organic semiconductor layer uses for organic material, which can be with
It for small organic molecule or organic polymer material, is prepared in a manner of through spin coating, blade coating or printing, the thickness of organic semiconductor layer
Degree is 80 to 120nm.
Further, in the present embodiment, the quanta point material in quantum dot layer is Colloidal Quantum Dots material, to pass through rotation
Prepared by the mode of painting, blade coating or printing, with a thickness of 20 to 40 nm.
Further, in the present embodiment, electron transfer layer is metal oxide nano film, by spin coating, blade coating or
Prepared by the mode of printing, with a thickness of 10 to 40 nm.
Further, in the present embodiment, after electron transfer layer film forming, device is corresponding organic in organic semiconductor layer
It impregnates in solvent so that source electrode is just independent with organic semiconductor layer.
Further, in the present embodiment, grid is transparent electrode, and source electrode material is gold, and drain material is silver or aluminium, grid
Pole with a thickness of 100 to 150 nm, source electrode and drain electrode with a thickness of 50 to 100 nm.
Further, in the present embodiment, the lighting transistor based on quantum dot vertical structure is as follows
Preparation:
S1: the transparent substrates of wash clean being put and are dried in an oven, which can be rigid substrate and be also possible to flexible liner
Bottom,；
S2: pass through mask plate on substrate by the way of magnetron sputtering and sputter gate pattern；
S3: insulating layer is prepared on grid by way of atomic layer deposition；
S4: netted source electrode is prepared on the insulating layer by way of spin coating, blade coating or printing；
S5: Source contact electrode is deposited out by mask plate on netted source electrode by the way of thermal evaporation；
S6: organic material is dissolved in an organic solvent, after dissolution completely, in institute by way of spin coating, blade coating or printing
It states and prepares organic semiconductor layer on netted source electrode；
S7: quanta point material is dissolved in specific solvent, after dissolution completely, is being had by way of spin coating, blade coating or printing
Quantum dot layer is prepared on machine semiconductor layer, the specific solvent and organic semiconductor layer are immiscible；
S8: electron transport layer materials are dissolved in specified organic solvent, after dissolution completely, pass through spin coating, blade coating or printing
Mode prepares electron transfer layer on quantum dot layer, and the specified organic solvent and quantum dot layer are immiscible；
S9: electron transfer layer film forming after, device is impregnated in the corresponding organic solvent of organic semiconductor layer so that source electrode with have
Machine semiconductor layer is just independent；
S10: by the way of thermal evaporation pass through mask plate on the electron transport layer and be deposited out and drain.
The following are specific embodiments of the present invention, but should not be considered limited to embodiment set forth herein.
It is the schematic diagram of idealized embodiments of the invention with reference to figure herein, embodiment shown in the present invention should not be recognized
For the specific shape for being only limitted to region shown in figure.It is indicated in the present embodiment with rectangle, the expression in figure is schematic
, but this should not be considered as limiting the scope of the invention.
The present invention will be described in further detail by specific embodiment below.
Embodiment 1
1) transparent glass substrate that size is about the cm of 1.5 cm × 1.5 is respectively in glass cleaner, deionized water, acetone and second
Drying in an oven is put after being cleaned by ultrasonic respectively in alcohol 15 minutes as substrate
2) ITO of one layer of 100nm is sputtered on the glass substrate in the manner of sputtering as grid.
3) one layer of aluminum oxide film of deposition is used as insulation on gained grid in step 2 by the way of atomic layer deposition
Layer, depositing temperature are 200 DEG C, and obtained aluminum oxide film is with a thickness of 50 nm.
4) silver nanowires is dispersed in isopropanol solvent with the proportion of 1 mg/ml, with this solution for netted source electrode material
It is prepared on the insulating layer obtained in step 3) using spin coating mode.Spin speed is 2000 rpm/min, and the time is 60 s, so
Anneal at 100 DEG C 1 min afterwards.
5) use the mode of thermal evaporation using mask plate special be deposited out on the netted source electrode obtained in step 4) width for
200 μm, with a thickness of 50 nm gold as Source contact electrode.
6) semiconductive polymer material PDVT-8 is dissolved in chloroform solvent with the proportion of 10 mg/ml.With this
Solution is that organic semiconductor layer material is prepared on the Source contact electrode obtained in step 5) using spin coating mode.Spin speed
For 1000 rpm/min, the time is 60 s, and then anneal at 150 DEG C 10 min, obtains partly leading with a thickness of the organic of 120 nm
Body layer film.
7) CdSe/ZnS quantum dot is dissolved in n-hexane solvent with the proportion of 15 mg/ml.Using this solution as quantum dot
Layer material is prepared on the organic semiconductor layer obtained in step 6) using spin coating mode.Spin speed is 2000 rpm/min,
Time is 60 s, and then anneal at 60 DEG C 15 min, obtains the quantum dot layer film with a thickness of 30 nm.
8) electron transport layer materials ZnO is dissolved in alcohol solvent with the proportion of 30 mg/ml.Using this solution as electronics
Transmission layer material is prepared on the quantum dot layer obtained in step 7) using spin coating mode.Spin speed is 3000 rpm/min,
Time is 40 s, and then anneal at 120 DEG C 30 min, obtains the electron-transport layer film with a thickness of 40 nm.
9) device portions are dipped into and each layer on golden source electrode is made all to steep in chloroform solvent, source contact
Electrode just exposes independently to be opened with PDVT-8.
10) it is deposited out on the electron transfer layer obtained in step 9) by the way of thermal evaporation using mask plate special
Width be 200 μm, with a thickness of 100 nm silver as drain electrode.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (10)
1. a kind of vertical structure light-emitting transistor based on quantum dot, it is characterised in that: the vertical structure based on quantum dot
Lighting transistor include the substrate being stacked, grid, insulating layer, Source contact electrode, netted source electrode, organic semiconductor layer,
Quantum dot layer, electron transfer layer and drain electrode；Wherein Source contact electrode and organic semiconductor layer are arranged at netted source electrode table
Face, wherein setting gradually quantum dot layer, electron transfer layer, drain electrode using organic semiconductor layer as substrate；The lighting transistor uses
The organic transistor of vertical structure, substrate use transparent glass substrate, and source electrode connection medium use can form network
Nano material；The vertical structure is the vertical of netted source electrode, organic semiconductor layer, quantum dot layer, electron transfer layer and drain electrode
Stacked structure plays the electroluminescence characters of quantum dot light emitting device in conjunction with the switching characteristic of vertical structure organic transistor
Come, while reducing the operation voltage of quantum dot light emitting device by regulation grid voltage, it is more to realize that luminous intensity can arbitrarily regulate and control
Function element.
2. a kind of vertical structure light-emitting transistor based on quantum dot according to claim 1, it is characterised in that: the lining
Bottom is transparent, is rigid substrate or flexible substrate.
3. a kind of vertical structure light-emitting transistor based on quantum dot according to claim 1, it is characterised in that: the grid
Pole prepares in the manner of sputtering, and grid material is transparent metal oxide, with a thickness of 30 to 200 nm.
4. a kind of vertical structure light-emitting transistor based on quantum dot according to claim 1, it is characterised in that: described exhausted
Edge layer is insulation oxide film, is prepared by way of atomic layer deposition, with a thickness of 50 to 100 nm.
5. a kind of vertical structure light-emitting transistor based on quantum dot according to claim 1, it is characterised in that: the net
Shape source electrode is the nano material that can form network, is prepared by way of spin coating, blade coating or printing；The source electrode connection is situated between
Matter is gold, silver or aluminium, is prepared by the way of thermal evaporation, with a thickness of 20 to 80 nm.
6. a kind of vertical structure light-emitting transistor based on quantum dot according to claim 1, it is characterised in that: described to have
Machine semiconductor layer is organic semiconductor thin-film, is prepared by way of spin coating, blade coating or printing, with a thickness of 40 to 160 nm；Institute
Organic semiconductor thin-film is stated using organic material, the organic material be one of small organic molecule, organic polymer material or
Two kinds.
7. a kind of vertical structure light-emitting transistor based on quantum dot according to claim 1, it is characterised in that: the amount
Son point layer is quantum dot film, is prepared by way of spin coating, blade coating or printing, with a thickness of 20 to 40 nm；The quantum dot is thin
Film uses quanta point material, which is Colloidal Quantum Dots.
8. a kind of vertical structure light-emitting transistor based on quantum dot according to claim 1, it is characterised in that: the electricity
Sub- transport layer is metal oxide nano film, is prepared by way of spin coating, blade coating or printing, with a thickness of 10 to 40 nm.
9. a kind of vertical structure light-emitting transistor based on quantum dot according to claim 1, it is characterised in that: the leakage
Pole material is gold, silver or aluminium, is prepared by the way of thermal evaporation, with a thickness of 20 to 80 nm.
10. a kind of prepare such as a kind of described in any item vertical structure light-emitting transistors based on quantum dot of claim 1 ~ 9
Method, it is characterised in that: the vertical structure light-emitting transistor based on quantum dot is made by the steps:
S1: using the glass of certain size as substrate, it is successively ultrasonic in glass cleaner, deionized water, acetone and ethyl alcohol
Cleaning, and put and dry in an oven；
S2: the gate pattern is sputtered by mask plate on glass by the way of magnetron sputtering；
S3: after the gate pattern makes, the insulation is prepared on above-mentioned glass substrate by way of atomic layer deposition
Layer；
S4: in a solvent by the dispersion of source level connection dielectric material, by way of spin coating, blade coating or printing on the insulating layer
Prepare the source level contact electrode；
S5: the source electrode pattern is deposited out by mask plate on Source contact electrode by the way of thermal evaporation；
S6: organic material is dissolved in another organic solvent, dissolution completely after, by way of spin coating, blade coating or printing
The organic semiconductor layer is prepared on the Source contact electrode；
S7: quanta point material is dissolved in specific solvent, after dissolution completely, in institute by way of spin coating, blade coating or printing
It states and prepares the quantum dot layer on organic semiconductor layer, the specific solvent and organic semiconductor layer are immiscible；
S8: electron transport layer materials are dissolved in specified organic solvent, after dissolution completely, pass through spin coating, blade coating or printing
Mode prepares the electron transfer layer on the quantum dot layer, and the specified organic solvent and quantum dot layer are immiscible；
S9: after the electron transfer layer film forming, device is impregnated in the corresponding organic solvent of organic semiconductor layer so that source electrode
It is just independent with organic semiconductor layer；
S10: pass through mask plate on the electron transport layer by the way of thermal evaporation and the drain pattern is deposited out.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109659436A (en) * | 2018-12-19 | 2019-04-19 | 福州大学 | A kind of all-transparent heterojunction phototransistors and preparation method thereof |
| CN109755255A (en) * | 2019-01-24 | 2019-05-14 | 福州大学 | A kind of metal-oxide memory and preparation method thereof |
| CN111010232A (en) * | 2019-12-20 | 2020-04-14 | 厦门大学 | Method for improving Micro-LED bandwidth in visible light communication |
| WO2020134204A1 (en) * | 2018-12-29 | 2020-07-02 | Tcl科技集团股份有限公司 | Method for manufacturing quantum dot light-emitting diode |
| CN111509126A (en) * | 2019-07-19 | 2020-08-07 | 中国科学院长春光学精密机械与物理研究所 | Vertical-structure photosensitive field effect transistor based on perovskite single crystal sheet |
| CN111509125A (en) * | 2019-07-19 | 2020-08-07 | 中国科学院长春光学精密机械与物理研究所 | Vertical structure field effect transistor based on perovskite single crystal sheet |
| WO2022178810A1 (en) * | 2021-02-26 | 2022-09-01 | 京东方科技集团股份有限公司 | Light-emitting transistor and display substrate |
| WO2023231739A1 (en) * | 2022-05-30 | 2023-12-07 | 京东方科技集团股份有限公司 | Organic light-emitting transistor, manufacturing method thereof, light emitting substrate, and display apparatus |
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| CN105304830A (en) * | 2015-10-09 | 2016-02-03 | Tcl集团股份有限公司 | Quantum dot light-emitting field effect transistor and preparation method thereof |
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| WO2016094580A1 (en) * | 2014-12-09 | 2016-06-16 | University Of Southern California | Screen printing systems and techniques for creating thin-film transistors using separated carbon nanotubes |
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| CN109659436A (en) * | 2018-12-19 | 2019-04-19 | 福州大学 | A kind of all-transparent heterojunction phototransistors and preparation method thereof |
| WO2020134204A1 (en) * | 2018-12-29 | 2020-07-02 | Tcl科技集团股份有限公司 | Method for manufacturing quantum dot light-emitting diode |
| US11889745B2 (en) | 2018-12-29 | 2024-01-30 | Tcl Technology Group Corporation | QLED manufacturing method |
| CN109755255A (en) * | 2019-01-24 | 2019-05-14 | 福州大学 | A kind of metal-oxide memory and preparation method thereof |
| CN111509126A (en) * | 2019-07-19 | 2020-08-07 | 中国科学院长春光学精密机械与物理研究所 | Vertical-structure photosensitive field effect transistor based on perovskite single crystal sheet |
| CN111509125A (en) * | 2019-07-19 | 2020-08-07 | 中国科学院长春光学精密机械与物理研究所 | Vertical structure field effect transistor based on perovskite single crystal sheet |
| CN111010232A (en) * | 2019-12-20 | 2020-04-14 | 厦门大学 | Method for improving Micro-LED bandwidth in visible light communication |
| WO2022178810A1 (en) * | 2021-02-26 | 2022-09-01 | 京东方科技集团股份有限公司 | Light-emitting transistor and display substrate |
| WO2023231739A1 (en) * | 2022-05-30 | 2023-12-07 | 京东方科技集团股份有限公司 | Organic light-emitting transistor, manufacturing method thereof, light emitting substrate, and display apparatus |
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