CN105552185B - A kind of full-inorganic light emitting diode with quantum dots and preparation method thereof based on inorganic perovskite material - Google Patents
A kind of full-inorganic light emitting diode with quantum dots and preparation method thereof based on inorganic perovskite material Download PDFInfo
- Publication number
- CN105552185B CN105552185B CN201610071423.1A CN201610071423A CN105552185B CN 105552185 B CN105552185 B CN 105552185B CN 201610071423 A CN201610071423 A CN 201610071423A CN 105552185 B CN105552185 B CN 105552185B
- Authority
- CN
- China
- Prior art keywords
- light emitting
- inorganic
- emitting diode
- full
- quantum dots
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 46
- 239000000463 material Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title description 7
- 238000000151 deposition Methods 0.000 claims abstract description 29
- 230000008021 deposition Effects 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 230000005540 biological transmission Effects 0.000 claims abstract description 15
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 13
- 239000007772 electrode material Substances 0.000 claims abstract description 10
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims abstract description 3
- 238000004528 spin coating Methods 0.000 claims description 14
- 239000006185 dispersion Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000010422 painting Methods 0.000 claims 1
- 238000001228 spectrum Methods 0.000 abstract description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 abstract 2
- 230000005284 excitation Effects 0.000 abstract 1
- 230000003760 hair shine Effects 0.000 abstract 1
- 229910001502 inorganic halide Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 235000019441 ethanol Nutrition 0.000 description 4
- 210000004940 nucleus Anatomy 0.000 description 4
- 238000001291 vacuum drying Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000003303 reheating Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of full-inorganic light emitting diode with quantum dots based on inorganic perovskite material, by ito glass, p-type oxide semi-conducting material NiO hole transmission layers, inorganic perovskite CsPbX3Quantum dot light emitting layer, N-shaped oxide semiconductor material electron transfer layer and cathode electrode material composition.It is prepared by following steps：Make hole transmission layer by depositing p-type inorganic oxide material first on ito glass, it is then spin coated onto inorganic halides perovskite quantum dot, electron transfer layer is made by magnetron sputtering deposition N-shaped inorganic oxide again, finally by the metal electrode of thermal evaporation deposition light emitting diode, the uniform full-inorganic CsPbX that shines is obtained3Perovskite light emitting diode with quantum dots.Full-inorganic light emitting diode with quantum dots luminescent spectrum halfwidth prepared by the present invention is narrow, and excitation purity is high, and stability is good, has excellent performance, and is with a wide range of applications.
Description
Technical field
The present invention relates to a kind of full-inorganic light emitting diode with quantum dots and preparation method thereof based on inorganic perovskite material,
Belong to quanta point electroluminescent device technical field.
Background technology
Light emitting diode (LED) is widely used in fields such as display, illumination and backlights, because of its excellent luminous efficiency and
Device performance, which has gradually replaced traditional fluorescent lamp, becomes the light source of a new generation.Organic Light Emitting Diode (OLED) is sent out with quantum dot
Optical diode (QLED) is considered as two big Main ways of the following LED development.Unique quantum effect assigns semiconductor-quantum-point
Material emission Wavelength tunable, the features such as emission spectrum peak width is narrow, quantum efficiency is high, semiconductor-quantum-point material are shining two
The fields such as pole pipe, display and solar cell have applications well foreground.So far, most of light emitting diode with quantum dots
Luminescent layer is all made of cadmium based quantum dot, and preparation process is cumbersome, and stability is in urgent need to be improved.Recently, inorganic perovskite quantum dot
(CsPbX3, X=Cl, Br, I) and excellent photoelectric properties cause extensive concern, easily solution synthesis, high-quantum efficiency
(being more than 80%) and narrow glow peak (being less than 30nm) make inorganic perovskite material become new research hotspot, are expected to break through QLED necks
Application problem in domain.
Hole transmission layer and electron transport layer materials in common QLED mostly use organic material.1 (Highly of document
Efficient Quantum-Dot Light-Emitting Diodes with DNA-CTMA as a Combined Hole-
Transporting and Electron-Blocking Layer, ACS Nano 2009,3,737-743) utilize PEDOT:
PSS, TPD, DNA-CTMA do hole transmission layer, TPBi, and Alq3 does electron transfer layer, however these organic materials are sufficiently expensive,
And be vulnerable to the influence of oxygen and moisture in atmospheric environment and reduce performance, cause QLED preparation process to require stringent, increases
Cost.Compared with organic transport layer material, inorganic material has higher electronics, hole mobility, and has in air good
Stability, therefore inorganic carrier transport layer material in the light emitting diode have huge application potential.
Invention content
The purpose of the present invention is to provide a kind of full-inorganic light emitting diode with quantum dots based on inorganic perovskite material and
Preparation method.
To achieve the goals above, technical scheme is as follows：A kind of full-inorganic based on inorganic perovskite material
Light emitting diode with quantum dots, including ito glass, p-type oxide semi-conducting material NiO hole transmission layers, inorganic perovskite
CsPbX3Quantum dot light emitting layer, N-shaped oxide semiconductor material electron transfer layer and cathode electrode material composition, the cathode electricity
Pole material is Ag or Al, and the full-inorganic light emitting diode with quantum dots is prepared by following steps：
Step 1, make hole transmission layer in clean ito glass surface depositing p-type oxide semiconductor material NiO, go forward side by side
Row heat treatment；
Step 2, CsPbX is taken3The dispersion liquid of quantum dot is spin-coated on through step 1 treated device surface；
Step 3, the surface magnetic control sputtering depositing n-type oxide semiconductor material after step 2 spin coating makees electron transfer layer,
Last thermal evaporation deposition cathode electrode material obtains full-inorganic light emitting diode with quantum dots.
Preferably, in step 1, the deposition of hole transport layer uses spin-coating method or magnetron sputtering method, the p-type oxygen
The deposition thickness of compound semi-conducting material NiO is 25~50nm, and heat treatment temperature is 300 DEG C~450 DEG C.
Preferably, in step 2, the CsPbX3X in quantum dot is that Cl, Br, I element or arbitrary the two combine,
CsPbX3The dispersion liquid of quantum dot is CsPbX3Quantum dot is dispersed in normal octane solvent, a concentration of 10~15mg/ of dispersion liquid
ML, spin speed are 1500~2000r/min, and spin-coating time is 45~60s.
Preferably, in step 3, the N-shaped oxide semiconductor material is ZnO or TiO2, deposition thickness be 40~
60nm；The cathode electrode material is Ag or Al, and deposition thickness is 80~100nm.
Compared with prior art, it is an advantage of the invention that：The present invention uses the device architecture of full-inorganic, using oxide half
Conductor material improves device stability as electron transfer layer and hole transmission layer while reducing cost；Nothing is used simultaneously
Machine perovskite CsPbX3Quantum dot improves its luminous efficiency as luminescent layer, light-emitting diode luminance produced by the present invention it is high and
It has excellent performance, is with a wide range of applications.
Description of the drawings
Fig. 1 is the structural schematic diagram of the light emitting diode of the present invention.
Fig. 2 is the current density of light emitting diode prepared by embodiment 2 with applied voltage variation relation figure.
Fig. 3 is the electroluminescent collection of illustrative plates of light emitting diode prepared by embodiment 3.
Specific implementation mode
Below by embodiment and attached drawing, the invention will be further described.
The present invention a kind of full-inorganic light emitting diode with quantum dots based on inorganic perovskite material, structure as shown in Figure 1,
Including ito glass, it is deposited on p-type oxide semi-conducting material NiO hole transmission layers, the inorganic perovskite on ito glass surface
CsPbX3Quantum dot light emitting layer, N-shaped oxide semiconductor material electron transfer layer and cathode electrode material, preparation method are as follows：
Hole transport is made by the p-type oxide NiO of 25~50nm of spin coating or magnetron sputtering deposition first on clean ito glass
Layer, spin-on inorganic perovskite CsPbX3 quantum dot light emitting layers again after 300 DEG C~450 DEG C heat treatments, then pass through magnetron sputtering deposition
N-shaped the oxide ZnO or TiO of 40~60nm2Make electron transfer layer, the cathode electrode material of last 80~100nm of thermal evaporation deposition
Expect Ag or Al, finally obtains luminous uniform full-inorganic CsPbX3Perovskite light emitting diode with quantum dots.
Embodiment 1
Step 1, take ito glass through acetone, vacuum drying after ethyl alcohol and deionized water cleaning passes through magnetron sputtering deposition
The NiO of 20nm thickness makees hole transmission layer, in air through 350 DEG C of processing 15min；
Step 2, the CsPbBr of appropriate 10mg/mL high―temperature nucleis is taken3Quantum dot dispersion liquid is spin-coated on the device after step 1 processing
Part surface, rotating speed 1500r/min, spin-coating time 45s；
Step 3, electron transfer layer, reheating are made in the surface after step 2 spin coating by the ZnO of magnetron sputtering deposition 40nm thickness
Ag (or Al) electrode of one layer of 80nm of hydatogenesis is made and is based on CsPbBr3Full-inorganic light emitting diode with quantum dots.
Embodiment 2
Step 1, take ito glass through acetone, vacuum drying after ethyl alcohol and deionized water cleaning passes through magnetron sputtering deposition
The NiO of 40nm thickness makees hole transmission layer, in air through 450 DEG C of processing 10min；
Step 2, the CsPbBr of appropriate 15mg/mL high―temperature nucleis is taken3Quantum dot dispersion liquid is spin-coated on the device after step 1 processing
Part surface, rotating speed 2000r/min, spin-coating time 45s；
Step 3, electron transfer layer, reheating are made in the surface after step 2 spin coating by the ZnO of magnetron sputtering deposition 50nm thickness
Ag (or Al) electrode of one layer of 100nm of hydatogenesis is made and is based on CsPbBr3Full-inorganic light emitting diode with quantum dots, device
The current density of part and application voltage relationship figure are as shown in Figure 2, it can be seen that the startup voltage of device is relatively low, meets energy-saving
Demand.
Embodiment 3
Step 1, take ito glass through acetone, vacuum drying after ethyl alcohol and deionized water cleaning passes through magnetron sputtering deposition
The NiO of 20nm thickness makees hole transmission layer, in air through 350 DEG C of processing 15min；
Step 2, the CsPbBr of appropriate 10mg/mL high―temperature nucleis is taken3Quantum dot dispersion liquid is spin-coated on the device after step 1 processing
Part surface, rotating speed 1500r/min, spin-coating time 45s；
Step 3, the TiO that the surface after step 2 spin coating passes through magnetron sputtering deposition 40nm thickness2Make electron transfer layer, then
Ag (or Al) electrode of one layer of 80nm of thermal evaporation deposition is made and is based on CsPbBr3Full-inorganic light emitting diode with quantum dots.
Electroluminescent (EL) spectrum of full-inorganic light emitting diode with quantum dots device manufactured in the present embodiment as shown in figure 3,
With very pure glow peak, without other miscellaneous peaks, and the halfwidth of emission peak is narrow, only 30nm or so.
Embodiment 4
Step 1, take ito glass through acetone, vacuum drying after ethyl alcohol and deionized water cleaning passes through magnetron sputtering deposition
The NiO of 20nm thickness makees hole transmission layer, in air through 350 DEG C of processing 15min；
Step 2, the CsPbIBr of appropriate 10mg/mL high―temperature nucleis is taken2Quantum dot dispersion liquid is spin-coated on after step 1 processing
Device surface, rotating speed 1500r/min, spin-coating time 45s；
Step 3, electron transfer layer, reheating are made in the surface after step 2 spin coating by the ZnO of magnetron sputtering deposition 40nm thickness
Ag (or Al) electrode of one layer of 80nm of hydatogenesis is made and is based on CsPbIBr2Full-inorganic light emitting diode with quantum dots.
Claims (5)
1. a kind of full-inorganic light emitting diode with quantum dots based on inorganic perovskite material, which is characterized in that by ito glass, p-type
Oxide semiconductor material NiO hole transmission layers, inorganic perovskite CsPbX3Quantum dot light emitting layer, N-shaped oxide semiconductor material
Expect electron transfer layer and cathode electrode material composition, is made by following steps：
Step 1, make hole transmission layer in clean ito glass surface depositing p-type oxide semiconductor material NiO, and carry out heat
Processing；
Step 2, CsPbX is taken3The dispersion liquid of quantum dot is spin-coated on through step 1 treated device surface；
Step 3, the surface magnetic control sputtering depositing n-type oxide semiconductor material after step 2 spin coating makees electron transfer layer, finally
Thermal evaporation deposition cathode electrode material obtains full-inorganic light emitting diode with quantum dots, and the N-shaped oxide semiconductor material is
ZnO or TiO2。
2. full-inorganic light emitting diode with quantum dots according to claim 1, which is characterized in that the cathode electrode material
For Ag or Al.
3. full-inorganic light emitting diode with quantum dots according to claim 1, which is characterized in that in step 1, the deposition
Hole transmission layer uses spin-coating method or magnetron sputtering method, and the deposition thickness of the p-type oxide semi-conducting material NiO is 25~
50nm, heat treatment temperature are 300 DEG C~450 DEG C.
4. full-inorganic light emitting diode with quantum dots according to claim 1, which is characterized in that described in step 2
CsPbX3X in quantum dot is Cl, Br, I element or arbitrary the two combination, CsPbX3The dispersion liquid of quantum dot is CsPbX3Amount
Son point is dispersed in normal octane solvent, a concentration of 10~15mg/mL of dispersion liquid, and spin speed is 1500~2000r/min, rotation
The painting time is 45~60s.
5. full-inorganic light emitting diode with quantum dots according to claim 1, which is characterized in that in step 3, the N-shaped
Oxide semiconductor material is ZnO or TiO2, deposition thickness is 40~60nm；The cathode electrode material is Ag or Al,
Deposition thickness is 80~100nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610071423.1A CN105552185B (en) | 2016-02-01 | 2016-02-01 | A kind of full-inorganic light emitting diode with quantum dots and preparation method thereof based on inorganic perovskite material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610071423.1A CN105552185B (en) | 2016-02-01 | 2016-02-01 | A kind of full-inorganic light emitting diode with quantum dots and preparation method thereof based on inorganic perovskite material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105552185A CN105552185A (en) | 2016-05-04 |
| CN105552185B true CN105552185B (en) | 2018-11-13 |
Family
ID=55831262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610071423.1A Expired - Fee Related CN105552185B (en) | 2016-02-01 | 2016-02-01 | A kind of full-inorganic light emitting diode with quantum dots and preparation method thereof based on inorganic perovskite material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105552185B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830618A (en) * | 2019-01-18 | 2019-05-31 | 南京理工大学 | One kind being based on CsPbI3The inorganic perovskite white light emitting diode of material |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017200732A1 (en) * | 2016-05-20 | 2017-11-23 | Brown University | Method for manufacturing perovskite solar cells and multijunction photovoltaics |
| TWI626768B (en) * | 2016-08-01 | 2018-06-11 | 國立成功大學 | Light-emitting diode and method for fabricating the same |
| CN106450042B (en) * | 2016-09-26 | 2020-03-31 | Tcl集团股份有限公司 | Metal oxide, QLED and preparation method |
| CN106450021A (en) * | 2016-11-24 | 2017-02-22 | 南方科技大学 | Organic electroluminescent device and preparation method thereof |
| CN107146854A (en) * | 2017-05-11 | 2017-09-08 | 安徽熙泰智能科技有限公司 | A kind of microdisplay on silicon part of perovskite light emitting diode and preparation method thereof |
| CN107170908B (en) * | 2017-05-23 | 2019-09-10 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method |
| CN107275523A (en) * | 2017-06-13 | 2017-10-20 | 苏州大学 | Preparation method of pure inorganic perovskite light-emitting diode device |
| CN107863424B (en) * | 2017-11-13 | 2019-06-21 | 吉林大学 | A kind of full-inorganic luminescent device and preparation method thereof based on perovskite thin film |
| CN109004091B (en) * | 2018-06-11 | 2020-06-30 | 南京理工大学 | Quantum dot light-emitting diode based on room-temperature perovskite material and preparation method thereof |
| JP7169126B2 (en) * | 2018-08-30 | 2022-11-10 | エルジー ディスプレイ カンパニー リミテッド | Coating type organic electroluminescence device |
| CN110492012B (en) * | 2019-08-26 | 2022-04-12 | 京东方科技集团股份有限公司 | Quantum dot light-emitting device, preparation method thereof, display panel and display device |
| CN110649133A (en) * | 2019-09-26 | 2020-01-03 | 河南科技大学 | All-inorganic perovskite LED light-emitting device based on InN electron transport layer |
| CN110718648A (en) * | 2019-10-18 | 2020-01-21 | 南昌航空大学 | In-situ synthesis manufacturing method of perovskite quantum dot light-emitting diode based on inorganic hole transport material |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050627A (en) * | 2012-11-29 | 2013-04-17 | 中国乐凯胶片集团公司 | Organic solar battery and preparation method of organic solar battery |
| CN103346221A (en) * | 2013-05-25 | 2013-10-09 | 浙江大学 | Quantum-dot light-emitting diode using inorganic metal oxide as electron transfer layer and method for manufacturing the same |
| CN103904178A (en) * | 2014-04-11 | 2014-07-02 | 浙江大学 | Quantum dot luminescent device |
| CN105206718A (en) * | 2015-09-25 | 2015-12-30 | 南京理工大学 | CsPbX3 inorganic perovskite quantum dot light-emitting diode (LED) prepared through solution method |
-
2016
- 2016-02-01 CN CN201610071423.1A patent/CN105552185B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050627A (en) * | 2012-11-29 | 2013-04-17 | 中国乐凯胶片集团公司 | Organic solar battery and preparation method of organic solar battery |
| CN103346221A (en) * | 2013-05-25 | 2013-10-09 | 浙江大学 | Quantum-dot light-emitting diode using inorganic metal oxide as electron transfer layer and method for manufacturing the same |
| CN103904178A (en) * | 2014-04-11 | 2014-07-02 | 浙江大学 | Quantum dot luminescent device |
| CN105206718A (en) * | 2015-09-25 | 2015-12-30 | 南京理工大学 | CsPbX3 inorganic perovskite quantum dot light-emitting diode (LED) prepared through solution method |
Non-Patent Citations (1)
| Title |
|---|
| colloidal quantum-dot light-emitting diodes with metal-oxide charge transport layers;J.M.CARUGE, et.al;《nature photonics》;20080316;第2卷;第247-249页 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830618A (en) * | 2019-01-18 | 2019-05-31 | 南京理工大学 | One kind being based on CsPbI3The inorganic perovskite white light emitting diode of material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105552185A (en) | 2016-05-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105552185B (en) | A kind of full-inorganic light emitting diode with quantum dots and preparation method thereof based on inorganic perovskite material | |
| Tokmoldin et al. | A Hybrid Inorganic–Organic Semiconductor Light‐Emitting Diode Using ZrO2 as an Electron‐Injection Layer | |
| CN110190195B (en) | Perovskite photovoltaic-luminescence-optical detection multifunctional device based on composite interface transmission material and preparation method thereof | |
| CN106129262B (en) | Ultraviolet organic light-emitting device with double hole injection layers and preparation method thereof | |
| TWI503050B (en) | An electrically conducting structure for a light transmissible device | |
| CN108963087A (en) | Quanta point electroluminescent device and display | |
| Gu et al. | Silicon-quantum-dot light-emitting diodes with interlayer-enhanced hole transport | |
| CN105576139A (en) | Quantum dot light-emitting diode (QLED) and preparation method therefor, and display | |
| CN105161635A (en) | QLED device with self-assembly electron transmission layer, and preparation method for QLED device | |
| CN106803546A (en) | A kind of light emitting diode with quantum dots and preparation method thereof | |
| CN112467058B (en) | Ternary exciplex composite material main body and OLED device preparation method thereof | |
| CN111048672B (en) | Perovskite electroluminescence-based white light LED and preparation method thereof | |
| CN109390491A (en) | Light emitting diode and the preparation method and application thereof | |
| Wang et al. | Solution-processed sodium hydroxide as the electron injection layer in inverted bottom-emission organic light-emitting diodes | |
| CN103247731A (en) | Novel light-operated light emitting diode based on nano material | |
| Feng et al. | Organometal halide perovskite as hole injection enhancer in organic light-emitting diode | |
| CN105762294A (en) | Iridium-complex-utilized white organic light-emitting device and preparation method thereof | |
| Nunziata et al. | ITO sputtering study for transparent OLED top electrode | |
| CN104103764A (en) | Organic light-emitting display and manufacturing method thereof | |
| KR20140011444A (en) | Process for preparing nanoparticle embedded electronic devices | |
| CN104103768A (en) | Organic light-emitting display and manufacturing method thereof | |
| CN1564641A (en) | Organic electroluminescence device | |
| WO2023082970A1 (en) | Composite material, preparation method therefor, and electroluminescent device | |
| Choi et al. | P‐9.2: Role of interlayers in inorganic perovskite thin films LEDs | |
| Wang et al. | Organic Light Emitting Devices with Nano-ZnO Thin Films as Cathode Buffer Layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181113 |